KR20130058270A - Apparatus of depositing thin film - Google Patents

Apparatus of depositing thin film Download PDF

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Publication number
KR20130058270A
KR20130058270A KR1020110124189A KR20110124189A KR20130058270A KR 20130058270 A KR20130058270 A KR 20130058270A KR 1020110124189 A KR1020110124189 A KR 1020110124189A KR 20110124189 A KR20110124189 A KR 20110124189A KR 20130058270 A KR20130058270 A KR 20130058270A
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KR
South Korea
Prior art keywords
disk
thin film
satellite disk
gas
chamber
Prior art date
Application number
KR1020110124189A
Other languages
Korean (ko)
Inventor
송준호
Original Assignee
세메스 주식회사
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Publication date
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Priority to KR1020110124189A priority Critical patent/KR20130058270A/en
Publication of KR20130058270A publication Critical patent/KR20130058270A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The thin film deposition apparatus includes a chamber and a main disk positioned in the chamber and accommodating a satellite disk on which a substrate provided into the chamber is seated. In particular, the satellite disk has an upper surface on which the substrate is seated and a lower surface opposite to the upper surface, and the rotating gas flows from the central portion of the lower surface toward the upper surface through the peripheral portion of the lower surface. And the thickness of the central couple can be made thinner than the thickness of the peripheral portion.

Description

Thin film deposition apparatus {Apparatus of depositing thin film}

The present invention relates to a thin film deposition apparatus, and more particularly, to an organic metal thin film deposition apparatus used for the manufacture of a light emitting device.

The thin film deposited on the substrate should have a uniform thickness. In particular, in the case of organometallic chemical vapor deposition (MOCVD), a light emitting device having high efficiency can be obtained only by forming a thin film having a more uniform thickness. Therefore, in the deposition of the thin film, it is necessary to sufficiently control the deposition temperature, the flow of gas for the deposition.

An example of an organometallic chemical vapor deposition apparatus capable of sufficiently controlling the aforementioned deposition temperature, gas flow for deposition, and the like is disclosed in Korean Patent Publication No. 2011-77463 (hereinafter, referred to as a 'cited document'). have. In particular, a thin film deposition apparatus such as an organometallic chemical vapor deposition apparatus disclosed in the cited literature includes a main disk and a satellite disk. Here, the main disk houses the satellite disk and rests on the substrate on the top surface of the satellite disk. And the satellite disk is rotated by the rotating gas flowing to the lower surface.

However, in the case of the thin film deposition apparatus such as the organometallic chemical vapor deposition apparatus mentioned above, the temperature of the center portion of the substrate seated on the upper surface of the satellite disk is slightly higher than the temperature of the peripheral portion of the substrate.

As such, a difference in temperature between the center portion of the substrate and the temperature of the peripheral portion of the substrate decreases the temperature uniformity in the entire substrate, and as a result, it is difficult to deposit a thin film having a uniform thickness on the substrate. .

SUMMARY OF THE INVENTION An object of the present invention is to provide a thin film deposition apparatus capable of uniformly forming a temperature uniformity of an entire substrate seated on an upper surface of a satellite disk.

According to an embodiment of the present invention, a thin film deposition apparatus includes a chamber and a main disk that is located in the chamber and accommodates a satellite disk on which a substrate provided into the chamber is seated. An upper surface to be seated and a lower surface opposite the upper surface, rotating to a rotating gas flowing from the central portion of the lower surface toward the upper surface through a peripheral portion of the lower surface, and having a thickness of the central couple It may be formed thinner than the thickness of the peripheral portion.

In the thin film deposition apparatus according to the aforementioned embodiment, the rotating gas may include a mixed gas of N 2 gas and H 2 gas mixed, and the satellite disc may have the center portion compared to the peripheral portion. The center portion may have a concave stepped structure compared to the peripheral portion so as to be formed.

According to the aforementioned thin film deposition apparatus, the satellite disk is provided such that the thickness of the center couple is made thinner than the thickness of the peripheral portion. Thus, the temperature uniformity of the satellite disk can be kept constant, and as a result, the temperature uniformity of the entire substrate seated on the upper surface of the satellite disk can be made constant.

That is, in the above-mentioned thin film deposition apparatus, the temperature of the center portion of the substrate seated on the upper surface of the satellite disk is somewhat higher than the temperature of the peripheral portion of the substrate. The temperature of the center portion of the satellite disk can be lowered compared to the surrounding portion of the relatively thick satellite disk, so that the temperature uniformity of the satellite disk can be kept constant, thus increasing the The temperature uniformity of the whole substrate to be seated can be made constant.

Thus, when the thin film deposition apparatus of the present invention is used, a thin film having a more uniform thickness can be easily formed.

1 is a schematic diagram showing a thin film deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a graph illustrating a temperature distribution diagram of a satellite disk in the thin film deposition apparatus of FIG. 1.
FIG. 3 is a schematic diagram illustrating a satellite disk of the thin film deposition apparatus of FIG. 1.

While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments. It is to be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but on the contrary, is intended to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. In describing the drawings, similar reference numerals are used for similar components. The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In the present application, the term "comprises" or "comprising ", etc. is intended to specify that there is a stated feature, figure, step, operation, component, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

Example

1 is a schematic block diagram showing a thin film deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the thin film deposition apparatus 100 may correspond to an organic thin film chemical vapor deposition apparatus or the like used for manufacturing a light emitting device.

The above-mentioned thin film deposition apparatus 100 includes a chamber 110 in which a substrate is positioned inside and thin film deposition is performed. In particular, the chamber 110 according to an embodiment of the present invention has an upper chamber 111 and a lower chamber 113 which are divided into two structures. As described above, in the case of the chamber 110 separated into the upper chamber 111 and the lower chamber 113, the upper chamber 111 serves as a lid for inflow and outflow of the substrate, and the lower chamber ( 113 is combined with the upper chamber 111 serves as a reactor to provide a process space. At this time, when the lower chamber 113 and the upper chamber 111 are combined, an O-ring 135 may be provided to maintain airtightness.

And although not shown, the chamber according to another embodiment of the present invention may have a single structure. At this time, the chamber having a single structure may have a structure that mainly enters and exits the substrate using a gate valve.

In detail, the upper chamber 111 is provided with a gas injector 125 capable of supplying and injecting a process gas to a substrate positioned in the lower chamber 113. Here, the gas injection unit 125 may be provided as a shower head, a nozzle, or the like.

In addition, the lower chamber 113 is provided with a main disk 121. Here, the main disk 121 has a structure for accommodating the satellite disk 123 described later. That is, the main disk 121 has a structure for accommodating the satellite disk 123 on which the substrate provided into the chamber 110 is seated. In addition, the main disk 121 has a structure supported by the support 129. The main disk 121 may have a structure that rotates as in one embodiment of the present invention, or may have a structure where the present invention does not rotate as in other embodiments. As mentioned, when the main disk 121 has a structure that rotates, although not shown, the support member 129 or the like may further include a driving member capable of rotating the main disk 121. That is, the support member 129 may be further provided with a drive member including a drive motor, a drive shaft, etc., so that the drive member may be further provided in a form capable of rotation by a belt or rotation by gear engagement. . In addition to the driving member having the mechanical structure mentioned above, the main disk 121 may have a structure that rotates by a flow of rotating gas, such as the satellite disk 123 described later. In this case, although not shown, it can be achieved by forming a flow path and the like for flowing the gas for rotation to the main disk 121 through the support 129.

And as mentioned, the satellite disk 123 is accommodated in the main disk 121. In this case, at least two satellite disks 123 may be accommodated in each of the main disks 121. In particular, the satellite disk 123 has an upper surface on which a substrate provided into the chamber 110 is seated and a lower surface opposite to the upper surface. In addition, the satellite disk 123 has a structure that rotates by the flow of the gas for rotation. That is, the satellite disk 123 has a structure that rotates by the rotating gas flows from the center portion of the lower surface of the satellite disk 123 to the upper surface of the satellite disk 123 through the peripheral portion of the lower surface. In other words, the satellite disk 123 rises as the rotating gas flows to the center portion of the lower surface of the satellite disk 123, and then the rotating gas is moved from the center portion of the lower surface of the satellite disk 123 to the satellite disk. It rotates by flowing toward the upper surface of the satellite disk 123 through the peripheral portion of the lower surface of the (123). In this case, the lower surface of the satellite disk 123 may be formed to have an impeller structure for smoother rotation of the satellite disk 123.

Here, the rotating gas for the rotation of the satellite disk 123 mentioned above is mainly connected to the lower surface of the satellite disk 123 through the support 129 and the main disk 121, the rotary gas supply unit 131 It may have a structure that flows by. In particular, the rotary gas supply unit 131 may include a storage unit for storing the rotating gas, a valve for controlling the flow of the rotating gas, a mass flow controller (MFC) for controlling the flow rate of the rotating gas, and the like. It may include.

In addition, a heater 127 may be provided to form a deposition temperature when the thin film is deposited. In particular, in one embodiment of the present invention, the heater 127 is provided to be positioned below the main disk 121. However, although not shown, the heater 127 may be provided in another part of the chamber 110 instead of under the main disk 121 as in another embodiment of the present invention. That is, the position where the heater 127 is provided is not limited when the deposition temperature can be uniformly formed and maintained. In addition, the heater 127 may have a structure such as an electric coil and a lamp.

As described above, the aforementioned thin film deposition apparatus 100 rotates the satellite disk 123 in a state where the substrate is seated on the upper surface of the satellite disk 123, and also rotates the main disk 121 in some cases, A process gas may be provided and injected into the chamber 110 through the injection unit 125, and a thin film having a uniform thickness may be deposited on the substrate by appropriately controlling the deposition temperature using the heater 127. Can be.

FIG. 2 is a graph illustrating a temperature distribution diagram of a satellite disk in the thin film deposition apparatus of FIG. 1.

Referring to FIG. 2, a temperature distribution chart formed on the satellite disk 123 when the thin film is deposited using the aforementioned thin film deposition apparatus 100, and as mentioned in the related art, the temperature of the central portion of the satellite disk 123 is described. It can be seen that the composition is higher than the temperature of the peripheral portion of the satellite disk 123.

As such, when the temperature of the center portion of the satellite disk 123 is higher than the temperature of the peripheral portion of the satellite disk 123, the temperature of the substrate seated on the upper surface of the satellite disk 123 may also be increased. It becomes higher than the temperature of the peripheral portion, and as a result, a situation arises in which a thin film having a uniform thickness cannot be deposited on the substrate.

Accordingly, in the present invention, the temperature uniformity of the satellite disk 123 is kept constant by changing the structure of the satellite disk 123, and even the temperature uniformity of the entire substrate seated on the upper surface of the satellite disk 123 is constant. To create.

FIG. 3 is a schematic diagram illustrating a satellite disk of the thin film deposition apparatus of FIG. 1.

Referring to FIG. 3, the satellite disk 123 is provided with an upper surface 123a on which the substrate is seated and a lower surface 123b opposite to the upper surface 123a. The satellite disk 123 has a configuration in which a gas for rotation flows from the center portion of the lower surface 123b to the upper surface 123a through the peripheral portion of the lower surface 123b for rotation.

Here, in the case of the satellite disk 123 of the present invention, the thickness of the center portion is provided so that the thickness is smaller than that of the peripheral portion. In particular, the satellite disk 123 mentioned may be provided to have a structure 123c which is concave compared to the peripheral portion so that the central portion is formed to be smaller than the peripheral portion.

As described above, the satellite disk 123 is formed so that the thickness of the center couple is thinner than the thickness of the peripheral portion, so that the satellite disk is relatively formed by the rotating gas flowing to the lower surface of the satellite disk 123. Since the temperature of the center portion 123 can be lowered compared to the temperature of the peripheral portion of the satellite disk 123 formed relatively thick, the temperature uniformity of the satellite disk 123 can be kept constant, and thus the satellite disk ( The temperature uniformity of the entire substrate seated on the upper surface of the 123 can be made constant. In other words, since the center portion of the satellite disk 123 is formed relatively thin when the rotating gas flows, the temperature can be lowered more easily than the peripheral portion of the satellite disk 123 formed relatively thick. The state in which the temperature of the center portion of the disk 123 is set higher than the temperature of the peripheral portion of the satellite disk 123 may be reconstituted to have a uniform temperature throughout the satellite disk 123.

At this time, the gas for rotation can more easily form and maintain the temperature uniformity when using a mixed gas of N 2 gas and H 2 gas is mixed. In this case, when the N 2 gas or the H 2 gas is used separately, the temperature of the rotating gas itself may change rapidly depending on the temperature of the satellite disk 123. This is because, as mentioned, when using a mixture of N 2 gas and H 2 gas, the degree of change in the temperature of the rotating gas is sufficiently controlled by the temperature of the satellite disk 123. This is because the H 2 gas can compensate for the temperature change of the 2 gas, and the N 2 gas can compensate for the temperature change of the H 2 gas.

As described above, the thin film deposition apparatus 100 of the present invention changes the structure of the satellite disk 123 and uses the mixed gas of N 2 gas and H 2 gas as the rotating gas. The temperature uniformity can be kept constant, and as a result, the temperature uniformity of the entire substrate seated on the upper surface of the satellite disk 123 can be made constant, and thus a thin film having a more uniform thickness can be easily formed. have.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims. You will understand.

As mentioned above, when the thin film deposition apparatus of the present invention is used, a thin film having a uniform thickness can be easily formed, and is particularly active in the manufacture of light emitting devices and the like which require the formation of a thin film having a more uniform thickness. Can be used as

100: thin film deposition apparatus 110: chamber
111: upper chamber 113: lower chamber
121: main disk 123: satellite disk
125 gas injector 127 heater
129: support portion 131: gas supply for rotation
135: O-ring

Claims (2)

chamber;
A main disk located within the chamber and containing a satellite disk on which a substrate provided into the chamber is seated;
The satellite disk has an upper surface on which the substrate is seated and a lower surface opposite the upper surface, and rotates to a rotating gas flowing from the center portion of the lower surface toward the upper surface through the peripheral portion of the lower surface. And the thickness of the central couple is thinner than the thickness of the peripheral portion. According to claim 1, The rotating gas comprises a mixed gas of N 2 gas and H 2 gas is mixed,
The satellite disk has a thin film deposition apparatus, characterized in that the center portion has a concave stepped structure compared to the peripheral portion so that the center portion is formed to be smaller than the peripheral portion.
KR1020110124189A 2011-11-25 2011-11-25 Apparatus of depositing thin film KR20130058270A (en)

Priority Applications (1)

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KR1020110124189A KR20130058270A (en) 2011-11-25 2011-11-25 Apparatus of depositing thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110124189A KR20130058270A (en) 2011-11-25 2011-11-25 Apparatus of depositing thin film

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KR20130058270A true KR20130058270A (en) 2013-06-04

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