KR20130058233A - Light emitting device pakage - Google Patents

Light emitting device pakage Download PDF

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Publication number
KR20130058233A
KR20130058233A KR1020110124134A KR20110124134A KR20130058233A KR 20130058233 A KR20130058233 A KR 20130058233A KR 1020110124134 A KR1020110124134 A KR 1020110124134A KR 20110124134 A KR20110124134 A KR 20110124134A KR 20130058233 A KR20130058233 A KR 20130058233A
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KR
South Korea
Prior art keywords
light emitting
emitting device
light
polar
package
Prior art date
Application number
KR1020110124134A
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Korean (ko)
Inventor
윤형선
심희재
이은득
Original Assignee
엘지이노텍 주식회사
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Priority to KR1020110124134A priority Critical patent/KR20130058233A/en
Publication of KR20130058233A publication Critical patent/KR20130058233A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE: A light emitting device package is provided to improve reliability by growing a GaN based semiconductor layer on the non-polar or the anti-polar surface of a substrate. CONSTITUTION: A package body(110) includes a cavity. A first, a second, and a third light emitting device(130,140,150) are arranged in the bottom surface of the cavity. The first, the second, and the third light emitting device have different peak wavelengths. A first light emitting device is grown to have the non-polar or the anti-polar surface. The peak wavelength of the first light emitting device is 500-560 nm.

Description

Light emitting device package {LIGHT EMITTING DEVICE PAKAGE}

An embodiment relates to a light emitting device package.

Light emitting devices such as light emitting diodes or laser diodes using semiconductors of Group 3-5 or 2-6 compound semiconductor materials of semiconductors have various colors such as red, green, blue, and ultraviolet rays due to the development of thin film growth technology and device materials. Can be implemented. In addition, efficient white light can be realized by using fluorescent materials or combining colors, and has advantages of low power consumption, semi-permanent life, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps. .

Therefore, it replaces a light emitting diode backlight, a fluorescent lamp or an incandescent bulb which replaces a cold cathode fluorescence lamp (CCFL) constituting a backlight of a transmission module of an optical communication means and a liquid crystal display (LCD) display device. Applications are expanding to white light emitting diode lighting devices, automotive headlights and traffic lights.

In the nitride semiconductor light emitting device, a substrate having a crystal structure identical to that of a nitride semiconductor material such as gallium nitride (GaN) and the like is not present, and a sapphire substrate which is an insulating substrate is used. Differences in lattice constants and coefficients of thermal expansion occur between the GaN layer grown on the sapphire substrate and the sapphire substrate, resulting in lattice mismatch and many crystal defects in the GaN layer.

Crystal defects increase the leakage current of the device and when an external static electricity enters, the active layer of the light emitting device having many crystal defects is destroyed by a strong field.

The embodiment is intended to improve the efficiency and reliability of the light emitting device package.

An embodiment light emitting device package includes a package body including a cavity and a first light emitting device, a second light emitting device, and a third light emitting device disposed adjacent to each other at a bottom of the cavity and having different peak wavelengths. 1 The light emitting device is grown in a non-polar or semi-polar plane.

The peak wavelength of the first light emitting device may be 500 nm to 560 nm, the peak wavelength of the second light emitting device may be 420 nm to 480 nm, and the peak wavelength of the third light emitting device may be 600 nm to 700 nm.

The substrate may be a substrate having unit cells having a hexagonal structure.

In another embodiment, a light emitting device package includes a package body including a cavity and a fourth light emitting device and a fifth light emitting device disposed adjacent to each other at a bottom of the cavity and having different peak wavelengths and emitting primary light. And a resin layer surrounding the fourth light emitting device and the fifth light emitting device, wherein the resin layer includes a phosphor that emits secondary light due to the primary light, and the fourth light emitting device is non-polar or semi-polar. It grows to semi-polar plane.

The peak wavelength of the fourth light emitting device may be 500 nm to 560 nm, and the peak wavelength of the fifth light emitting device may be 420 nm to 480 nm.

The phosphor may have a peak wavelength of 570nm to 680nm.

The embodiment can improve the efficiency and reliability of the light emitting device package.

1 is a perspective view of a light emitting device package according to an embodiment;
2 is a sectional view showing a light emitting device package according to the embodiment;
3 is a diagram showing a structure of sapphire crystal,
4 is a perspective view of a light emitting device package according to another embodiment;
5 is a sectional view showing a light emitting device package according to another embodiment;
6 is a view illustrating a head lamp in which a light emitting device module is disposed, according to an exemplary embodiment;
7 is a diagram illustrating an image display device in which a light emitting device module is disposed, according to an exemplary embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

In the description of the embodiment according to the present invention, when described as being formed on the "top" or "bottom" (on or under) of each element, the top (bottom) or the bottom (bottom) (on or under) includes both the two elements are in direct contact with each other (directly) or one or more other elements are formed indirectly between the two elements (indirectly). Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

1 is a perspective view of a light emitting device package according to an embodiment, FIG. 2 is a cross-sectional view of a light emitting device package according to an embodiment, and FIG. 3 is a view illustrating a structure of a sapphire crystal.

1 and 2, the light emitting device package 100 according to the embodiment includes a package body 110, a first light emitting device 130, a second light emitting device 140, a third light emitting device 150, and wires. 132, 142, and 152, the first electrode layer 160, and the second electrode layer 170.

The package body 110 may include at least one of a resin material such as polyphthalamide (PPA), silicon (Si), a metal material, photo sensitive glass (PSG), sapphire (Al 2 O 3 ), and a printed circuit board (PCB). It can be formed as one. In an embodiment, the package body 110 may be made of a resin material such as polyphthalamide (PPA). The package body 110 may be formed of a conductive conductor.

The package body 110 has a cavity 105 that is open at the top and includes a side 102 and a bottom 103. The cavity 105 may be formed in a cup shape, a concave container shape, or the like, and the side surfaces 102 of the cavity 105 may be perpendicular to or inclined with respect to the bottom 103. The shape of the cavity 105 viewed from above may be circular, elliptical, or polygonal (eg, rectangular). The edge of the cavity 105 may be curved.

The package body 110 may be formed of a substrate having good insulation or thermal conductivity, such as a silicon-based wafer level package, a silicon substrate, silicon carbide (SiC), aluminum nitride (AlN), or the like. It may have a structure in which a plurality of substrates are stacked. The embodiments are not limited to the material, structure, and shape of the body described above.

The first light emitting device 130, the second light emitting device 140, and the third light emitting device 150 may be disposed on the bottom surface 103 of the cavity 105 at predetermined intervals from each other. The peak wavelength of the first light emitting device 130 is 500 nm to 560 nm, the peak wavelength of the second light emitting device 140 is 420 nm to 480 nm, and the peak wavelength of the third light emitting device 150 is 600 nm to 700 nm. In addition, the first light emitting device 130 is a light emitting device emitting green light, the second light emitting device 140 is a light emitting device emitting blue light, and the third light emitting device 150 is a red ( red) may emit light.

Here, the first light emitting device 130 may be a device grown on a non-polar or semi-polar surface of a substrate composed of unit cells having a hexagonal structure, and the second and third light emitting devices ( 140 and 150 may be devices grown on a polar surface of a silicon carbide or sapphire substrate which is commonly used.

The first electrode layer 160 and the second electrode layer 170 may be electrically separated from each other and provided in the package body 110.

For example, the first electrode layer 160 may be formed of a conductive material. For example, it may be formed of a material such as aluminum (Al) or copper (Cu). In the first electrode layer 160, an electrode wire made of a conductive material extends on the bottom surface 103 of the cavity 105, and the power supplied from the outside is supplied to the first light emitting device 130 and the second light emitting device. 140 may be selectively supplied to the third light emitting device 150. The second electrode layer 170 may be formed of a conductive material. For example, it may be formed of a material such as aluminum (Al) or copper (Cu). In the first electrode layer 160, an electrode wire made of a conductive material extends to the side surface 102 of the cavity 105, and the power supplied from the outside is supplied to the first light emitting device 130 and the second light emitting device ( 140 may be selectively supplied to the third light emitting device 150.

For example, the first electrode layer 160 may provide a negative power, and the second electrode layer 170 may supply a positive power. In addition, the opposite connection may supply positive power to the first electrode layer 160 and negative power to the second electrode layer 170.

In addition to the wire bonding method as illustrated, the first to third light emitting devices 130, 140, and 150 may be energized with the first and second electrode layers 160 and 170 by a flip chip method or a die bonding method.

The resin layer 190 may surround and protect the first to third light emitting devices 130, 140, and 150. In addition, the resin layer 190 may include a phosphor (not shown) to change the wavelength of the light emitted from the first to third light emitting devices 130, 140, and 150. Although not shown, a filler may be included in the resin layer 190 to prevent the phosphor (not shown) from being deposited below. The resin layer 190 should be formed in an area covering at least the first to third light emitting devices 130, 140, and 150 and the wires 132, 142, and 152.

In addition, a lens (not shown) is disposed on the resin layer 190 to adjust a directing angle of light emitted from the light emitting device.

Referring to FIG. 3, the crystal plane of the substrate when the sapphire substrate is used as the substrate for growing the light emitting device will be described.

The sapphire unit cell 20 has a hexagonal structure. The positions and orientations of the A-plane, C-plane and M-plane of the sapphire unit cell 20 are disclosed. The A-Plane is perpendicular to the C-Plane, and the M-Plane forms the side of the sapphire unit cell. The M-plane and the A-plane of the sapphire unit cell 20 correspond to non-polar planes. In the crystal structure of the sapphire unit cell 20, the semipolar plane is an R-plane having a c-axis and an inclination.

In general, GaN-based devices grown on sapphire substrates have inherent problems for the following reasons. That is, it is due to the mismatch of lattice mismatch and thermal expansion coefficient between sapphire and GaN. In particular, since the dislocation density becomes large due to the mismatch of thermal expansion coefficients, a method for reducing such lattice defects is required.

GaN and its alloys are most stable in hexagonal wurtzite crystal structures.

Group III and nitrogen atoms alternately occupy C-planes (0001) along the c-axis of the crystal. Symmetric elements included in this urethane structure indicate that group III nitrides have bulk spontaneous polarization along the c-axis.

Moreover, since this urethane crystal structure is noncentrosymmetric, urethane nitrides may additionally exhibit piezoelectric polarization along the c-axis of the crystal. Current nitride technology for electronic and optoelectronic devices uses nitride thin films grown along the c-direction of polarity. However, due to the presence of strong piezoelectric and spontaneous polarization, conventional C-plane quantum well structures in Group III nitride-based optoelectronic and electronic devices have been found to have undesirable quantumconfined Stark effect (QCSE). ) Is affected.

Thus, strong built-in electric fields along the c-direction bend the energy bands to spatially separate electrons and holes, thereby limiting carrier recombination efficiency and reducing oscillator strength. Can also cause red shift luminescence.

This phenomenon is more serious in the case of the first light emitting device 130 emitting green light.

Therefore, the embodiment of the present invention provides a GaN-based semiconductor of the first light emitting device 130 on a substrate including a nonpolar plane or a semipolar plane to prevent spontaneous and piezoelectric polarization of the first light emitting device 130 that emits green light. The layer can be grown.

For example, subsequent nonpolar planes are equal to each other so that the entire crystal is not polarized in the growth direction. Within the GaN crystal structure, two families of symmetry-equivalent non-polar planes are collectively known as A-planes and collectively M-planes (M). This group is known as Plane.

GaN-based (AlGaInN) quantum well structures employing these non-polar growth directions, a- or m-directions, are an effective means of eliminating polarization-induced electric fields in urethane nitride structures. This can be

This is because the polar axis lies within the growth plane of the film and is therefore parallel to the heterointerfaces of the quantum wells.

Accordingly, the light emitting device package according to the embodiment may improve the efficiency and reliability of the light emitting device by growing a GaN-based semiconductor thin film of the green light emitting light emitting device on a nonpolar or semipolar surface of a substrate such as sapphire or SiC.

4 is a perspective view of a light emitting device package according to another embodiment, and FIG. 5 is a sectional view of the light emitting device package of FIG. 4. Hereinafter, the same reference numerals are used for the same structure as the above embodiment, and the description thereof will be omitted because the description thereof is the same.

4 and 5, the light emitting device package 100 according to the embodiment includes a body 110, a cavity 120, a fourth light emitting device 240, a fifth light emitting device 250, and wires 242 and 252. ), A first electrode layer 160, a second electrode layer 170, a resin layer 290, and a phosphor 295.

The fourth light emitting device 240 may be a light emitting device emitting green light, and the second light emitting device 250 may be a light emitting device emitting blue light.

The resin layer 290 may be formed of a phosphor having a peak wavelength of 570 nm to 680 nm. The resin layer 290 may be a silicate-based phosphor having the formula (Ba, Sr, Ca) x SiO 4: Eu and / or Mn. In this case, for example, the compounding ratio of Ba, Sr, and Ca, the compounding ratio of (Ba, Sr, Ca) x SiO 4: Eu and (Ba, Sr, Ca) x SiO 4: Mn, and / or Ba, Sr, Ca By appropriately adjusting the compounding ratio of Mn, Eu and the like, it is possible to provide a phosphor having a peak wavelength of 570 nm to 680 nm.

In this manner, the resin layer 290 formed by differently adjusting the compounding ratio of the phosphors is mixed with light emitted from the fourth light emitting device 240 and the fifth light emitting device 250 to emit light of white light. Make it possible.

That is, light is primarily generated from the fourth light emitting device 240 and the fifth light emitting device 250, and is excited by light from the fourth light emitting device 240 and the fifth light emitting device 250. Can generate secondary light.

As a result, the light emitting device package 200 according to the embodiment is capable of mixing the primary light generated in the fourth and fifth light emitting devices 240 and 250 and the secondary light wavelength-converted by the phosphor of the resin layer 290. Through this, white light can be realized.

In addition, the light emitting device and the phosphor may be appropriately selected to easily emit light of color coordinate values required by a user.

6 is a diagram illustrating an embodiment of a head lamp including a light emitting device package.

In the head lamp 700 according to the embodiment, after the light emitted from the light emitting device module 710 in which the light emitting device package is disposed is reflected by the reflector 720 and the shade 730, the head lamp 700 passes through the lens 740 to move the front of the vehicle body. Can head.

As described above, since the light extraction efficiency of the light emitting device used in the light emitting device module 710 may be improved, the optical characteristics of the entire head lamp may be improved.

The light emitting device package included in the light emitting device module 710 may include a plurality of the light emitting devices described above, but is not limited thereto.

7 is a diagram illustrating an example of a display device in which a light emitting device package is disposed.

As shown in FIG. 7, the display device 800 according to the embodiment is disposed in front of the light source modules 830 and 835, the reflector 820 on the bottom cover 810, and the reflector 820. A light guide plate 840 for guiding light emitted from the light source module to the front of the display device, a first prism sheet 850 and a second prism sheet 860 disposed in front of the light guide plate 840, and the second prism And a panel 870 disposed in front of the sheet 860 and a color filter 880 disposed throughout the panel 870.

The light source module includes the above-described light emitting device package 835 on the circuit board 830. Here, the circuit board 830 may be a PCB and the like, and the light emitting device package 835 is as described with reference to FIG. 1 or 4.

The bottom cover 810 may receive components in the display device 800. The reflective plate 820 may be provided as a separate component as shown in the figure, or may be provided in the form of a high reflective material on the rear surface of the light guide plate 840 or the front surface of the bottom cover 810. Do.

Here, the reflection plate 820 can be made of a material having a high reflectance and can be used in an ultra-thin shape, and polyethylene terephthalate (PET) can be used.

The light guide plate 840 scatters light emitted from the light emitting device package module so that the light is uniformly distributed over the entire screen area of the LCD. Accordingly, the light guide plate 830 is made of a material having a good refractive index and a high transmittance, and may be formed of polymethylmethacrylate (Pmma), polycarbonate (Pc), polyethylene (PE), or the like. In addition, the light guide plate may be omitted, and thus an air guide method in which light is transmitted in the space on the reflective sheet 820 may be possible.

The first prism sheet 850 is formed of a translucent and elastic polymer material on one surface of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, the plurality of patterns may be provided in the stripe type and the valley repeatedly as shown.

In the second prism sheet 860, the direction of the floor and the valley of one surface of the support film may be perpendicular to the direction of the floor and the valley of one surface of the support film in the first prism sheet 850. This is to evenly distribute the light transmitted from the light source module and the reflective sheet in all directions of the panel 870.

In the present embodiment, the first prism sheet 850 and the second prism sheet 860 form an optical sheet, which is composed of another combination, for example, a micro lens array or a diffusion sheet and a micro lens array. Or a combination of one prism sheet and a micro lens array.

The liquid crystal display panel (Liquid Crystal Display) may be disposed on the panel 870, in addition to the liquid crystal display panel 860 may be provided with other types of display devices that require a light source.

The panel 870 is a state in which the liquid crystal is located between the glass body and the polarizing plate is placed on both glass bodies in order to use the polarization of light. Here, the liquid crystal has an intermediate property between a liquid and a solid, and liquid crystals, which are organic molecules having fluidity like a liquid, are regularly arranged like crystals. The liquid crystal has a structure in which the molecular arrangement is changed by an external electric field And displays an image.

The liquid crystal display panel used in the display device uses a transistor as a switch for regulating the voltage supplied to each pixel as an active matrix method.

The front surface of the panel 870 is provided with a color filter 880 to transmit the light projected from the panel 870, only the red, green and blue light for each pixel can represent an image.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: light emitting element, 110: package body,
130, 140, 150: first, second and third light emitting devices, 132, 142, 152: wire,
160: first electrode, 170: second electrode.

Claims (6)

A package body including a cavity; And
A first light emitting device, a second light emitting device, and a third light emitting device disposed adjacent to each other at a bottom of the cavity and having different peak wavelengths;
The first light emitting device is a light emitting device package is grown in a non-polar (semi-polar) or semi-polar (semi-polar) plane. The method according to claim 1,
The peak wavelength of the first light emitting device is 500nm to 560nm, the peak wavelength of the second light emitting device is 420nm to 480nm, the peak wavelength of the third light emitting device is 600nm to 700nm. The method according to claim 1,
The substrate is a light emitting device package is a substrate having a unit cell of a hexagonal structure. A package body including a cavity; And
A fourth light emitting device and a fifth light emitting device disposed adjacent to each other at the bottom of the cavity, each having a different peak wavelength and emitting primary light; And
A resin layer surrounding the fourth light emitting device and the fifth light emitting device, the resin layer including a phosphor emitting second light due to the primary light,
The fourth light emitting device is a light emitting device package grown in a non-polar (semi-polar) or a non-polar (semi-polar) plane. 5. The method of claim 4,
The peak wavelength of the fourth light emitting device is 500nm to 560nm, the peak wavelength of the fifth light emitting device is 420nm to 480nm and the light emitting device package. 6. The method of claim 5,
The phosphor has a light emitting device package having a peak wavelength of 570nm to 680nm.
KR1020110124134A 2011-11-25 2011-11-25 Light emitting device pakage KR20130058233A (en)

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Application Number Priority Date Filing Date Title
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