KR20130053169A - Light-emitting device - Google Patents

Abstract

PURPOSE: A light emitting device is provided to improve internal quantum efficiency by doping a barrier layer near a well layer of an active layer with dopants of high density. CONSTITUTION: An active layer includes a plurality of well layers, a first barrier layer, and a second barrier layer which are alternatively formed on a first conductive semiconductor layer(16). A second conductive semiconductor layer(18) is formed on the active layer. The first barrier layer is contacted with the second conductive semiconductor layer. A first well is formed between the first barrier layer and the second barrier layer. The second barrier layer has dopants of high density.

Description

Light-emitting device

An embodiment relates to a light emitting device.

Light emitting diodes (LEDs) are semiconductor light emitting devices that convert current into light. The light emitting diode can obtain light having high luminance, and is widely used as a light source for a display, a light source for an automobile, and a light source for an illumination, and emits white light having high efficiency by using a fluorescent material or by combining light emitting diodes of various colors. Diodes can also be implemented.

How to improve the light extraction structure to further improve the brightness and performance of the light emitting diode, how to improve the structure of the active layer, how to improve the current spreading, how to improve the structure of the electrode, to improve the structure of the light emitting diode package Various methods, including the method, have been tried.

The embodiment provides a light emitting device having a novel structure.

The embodiment provides a light emitting device having improved quality and reliability.

The embodiment provides a light emitting device having improved light efficiency.

According to an embodiment, the light emitting element includes a first conductivity type semiconductor layer; An active layer including a plurality of barrier layers and a plurality of well layers alternately formed on the first conductive semiconductor layer; And a second conductive semiconductor layer formed on the active layer, wherein at least one of the barrier layers includes a dopant.

According to an embodiment, the light emitting element includes a first conductivity type semiconductor layer; A second conductivity type semiconductor layer; And an active layer including a plurality of barrier layers and a plurality of well layers alternately formed between the first and second conductive semiconductor layers, wherein a first barrier layer is formed in contact with the second conductive semiconductor layer. And a second barrier layer spaced apart from the first barrier layer, a first well layer is formed between the first and second barrier layers, and the second barrier layer forms a tunnel region for passing a carrier. High concentrations of dopant to form.

Embodiments may improve internal quantum efficiency by doping with a high concentration of dopant in the barrier layer adjacent to the well layer of the active layer.

1 is a cross-sectional view illustrating a light emitting device according to an embodiment.
FIG. 2 is an enlarged cross-sectional view of an active layer of the light emitting device of FIG. 1.
3 is a diagram illustrating an energy band diagram of the light emitting device according to the first embodiment.
FIG. 4 is a view illustrating a tunnel path formed in the energy band diagram of FIG. 3.
5 is a graph showing the internal quantum efficiency of Comparative Examples and Examples.
6 is a diagram illustrating an energy band diagram of the light emitting device according to the second embodiment.
7 is a diagram illustrating an energy band diagram of the light emitting device according to the third embodiment.

In describing an embodiment according to the invention, in the case of being described as being formed "above" or "below" each element, the upper (upper) or lower (lower) Directly contacted or formed such that one or more other components are disposed between the two components. In addition, when expressed as "up (up) or down (down)" may include the meaning of the down direction as well as the up direction based on one component.

1 is a cross-sectional view illustrating a light emitting device according to an embodiment.

Referring to FIG. 1, the light emitting device 10 according to the embodiment includes a substrate 12 and a light emitting structure 15 formed on the substrate 12.

The light emitting structure 15 may include a plurality of compound semiconductor layers formed of a compound semiconductor material of group III-V elements. The light emitting structure 15 may include metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma chemical vapor deposition (PECVD), and molecular beam growth (MBE). It may be formed by growing using any one of a Molecular Beam Epitaxy) and a Hydride Vapor Phase Epitaxy (HVPE).

For example, the light emitting structure 15 may include a first conductive semiconductor layer 16, an active layer 20, and a second conductive semiconductor layer 18.

The first conductivity type semiconductor layer 16 is formed on the substrate 12, the active layer 20 is formed on the first conductivity type semiconductor layer 16, and the second conductivity type semiconductor layer ( 18 may be formed on the active layer 20.

The substrate 12 may be formed of at least one selected from the group consisting of sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, and Ge.

A buffer layer 14 may be formed between the substrate 12 and the light emitting structure 15, specifically, the first conductive semiconductor layer 16.

The buffer layer 14 may also be formed of the compound semiconductor material of the III-V group element described above.

The buffer layer 14 may be formed to mitigate a lattice constant difference between the first conductivity type semiconductor layer 16 and the substrate 12.

The buffer layer 14 more precisely mitigates the difference in the lattice top between the first conductive semiconductor layer 16 and the substrate 12, thereby forming the first conductive semiconductor layer 16, In order to prevent defects such as cracks from occurring in the active layer 20 and the second conductive semiconductor layer 18, a plurality of layers may be formed.

For example, the buffer layer 14 including a plurality of layers having Al _1-x In _x N including different mol% of In may be formed, but is not limited thereto.

For example, the buffer layer 14 may not include any dopant or include an n-type dopant, but is not limited thereto. The n-type dopant may include, for example, Si, Ge, Sn, or the like.

The first conductive semiconductor layer 16 formed later by the buffer layer 14 has a lattice constant difference with the substrate 12 to be alleviated, so that it is stable without any defects such as cracks or voids. It can be formed as.

The first conductive semiconductor layer 16 may be, for example, an n-type semiconductor layer including an n-type dopant. The n-type semiconductor layer has a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1) based on the compound semiconductor material of the group III-V element. Can have By the composition formula, at least one selected from the group consisting of, for example, InAlGaN, GaN, AlGaN, InGaN, AlN, InN, and AlInN may be formed as the first conductive semiconductor layer 16. The n-type dopant may include an n-type dopant such as Si, Ge, Sn, or the like.

The active layer 20 may be formed on the first conductivity type semiconductor layer 16.

The active layer 20 may include a first carrier injected through the first conductive semiconductor layer 16, for example, a second carrier injected through electrons or holes and the second conductive semiconductor layer 18. For example, holes or electrons are bonded to each other to emit light having a wavelength corresponding to a band gap difference of an energy band according to a material forming the active layer 20.

The active layer 20 of the embodiment may include any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, and a quantum line structure. The active layer 20 may have a multi-quantum structure in which compound semiconductors of group III-V elements are repeatedly formed in a cycle of a well layer and a barrier layer.

For example, it may be formed by a period of the InGaN well layer / GaN barrier layer, a period of the InGaN well layer / AlGaN barrier layer, or a period of the InGaN well layer / InGaN barrier layer. The band gap of the barrier layer may be larger than the band gap of the well layer.

The active layer 20 of the embodiment will be described later in more detail.

The second conductivity type semiconductor layer 18 may be formed on the active layer 20. The second conductive semiconductor layer 18 may be, for example, a p-type semiconductor layer including a p-type dopant. The p-type semiconductor layer has a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1) by using a compound semiconductor material of group III-V elements. Can have By the composition formula, at least one selected from the group consisting of, for example, InAlGaN, GaN, AlGaN, InGaN, AlN, InN, and AlInN may be formed as the second conductive semiconductor layer 18. The p-type dopant may include Mg, Zn, Ca, Sr, Ba, and the like.

Typically, the mobility of electrons is very high compared to the mobility of holes. When the first conductivity-type semiconductor layer 16 includes an n-type dopant and the second conductivity-type semiconductor layer 18 includes a p-type dopant, electrons of the first conductivity-type semiconductor layer 16 are rapidly While supplied to the active layer 20, holes of the second conductive semiconductor layer 18 are supplied to the active layer 20 relatively slowly. Accordingly, the active layer 20 has more electrons than holes, and some of the electrons which cannot be recombined with the holes do not stay in the active layer 20 and are transferred to the second conductive semiconductor layer 18. Will move. In the active layer 20, leakage current is generated by electrons that are not involved in recombination with holes and are moved to the second conductive semiconductor layer 18.

A blocking layer 17 may be formed between the active layer 20 and the second conductive semiconductor layer 18 to prevent leakage currents caused by the electrons.

The blocking layer 17 may be formed of a compound semiconductor material of a III-V group element.

The blocking layer 17 may be formed of at least a semiconductor material larger than an energy band gap of the active layer 20 so that electrons of the active layer 20 do not move to the second conductive semiconductor layer 18. have. For example, the blocking layer 17 may be formed of at least one selected from the group consisting of AlN, AlGaN, and AlGaInN.

The blocking layer 17 may not include any dopant or may include a p-type dopant, but is not limited thereto. The p-type dopant may include, for example, Mg, Zn, Ca, Sr, Ba, and the like.

The electrons of the active layer 20 do not move to the second conductive semiconductor layer 18 by the blocking layer 17 larger than the energy band gap of the active layer 20, and remain in the active layer 20.

Although not shown, a transparent conductive layer may be formed on the second conductive semiconductor layer 18. The transparent electrode layer includes ITO, IZO (In-ZnO), GZO (Ga-ZnO), AZO (Al-ZnO), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), IrOx, RuOx, RuOx / ITO , Ni / IrOx / Au and Ni / IrOx / Au / ITO.

Meanwhile, a reflective conductive layer (not shown) may be formed instead of the transparent conductive layer. The reflective conductive layer may include at least one selected from the group consisting of silver (Ag), aluminum (Al), platinum (Pt), and paladin (Pd) having high reflection efficiency.

Although not shown, a first electrode (not shown) may be formed on the second conductive semiconductor layer 18. In addition, a second electrode (not shown) may be formed in a region where a portion of the first conductivity type semiconductor layer 16 is exposed. The first and second electrodes provide power to the light emitting device 10. Such a structure may be referred to as a lateral structure. The embodiment may be applied to a vertical structure or a flip-chip structure in addition to the horizontal structure.

Before forming the second electrode, mesa etching may be performed to expose the first conductivity-type semiconductor layer 16.

FIG. 2 is an enlarged cross-sectional view of an active layer of the light emitting device of FIG. 1.

Referring to FIG. 2, the active layer 20 according to the embodiment may be formed of a multi quantum well structure (MQW).

The active layer 20 includes a plurality of well layers 24_1, 24_2,..., 24_ (n-2), 24_n and a plurality of barrier layers 22_1, 22_2,..., 22_ (n-1), 22_n ) May be alternately stacked on the first conductivity type semiconductor layer 16.

For example, when the first conductivity type semiconductor layer 16 includes an n-type dopant, the well layer 24_n may be formed in contact with the first conductivity type semiconductor layer 16.

For example, when the second conductivity-type semiconductor layer 18 includes a p-type dopant, the barrier layer 22_1 may be formed in contact with the second conductivity-type semiconductor layer 18.

In the embodiment, since the blocking layer 17 is formed between the active layer 20 and the second conductive semiconductor layer 18, the barrier layer 22_1 may be formed in contact with the blocking layer 17.

For example, the first barrier layer 22_1, the first well layer 24_1, the second barrier layer 22_2, the second well layer 24_2, the third barrier layer 22_3, and the first barrier layer 22_1 may be formed from the blocking layer 17. 3 well layer 24_3, fourth barrier layer 22_4, ..., (n-2) th barrier layer 22_ (n-2), (n-2) th well layer 24_ (n-2) ), (N-1) th barrier layer 22_ (n-1), (n-1) th well layer 24_ (n-1), nth barrier layer 22_n, and nth well layer 24_n ) May be alternately or alternately placed.

The nth well layer 24_n may be in contact with the first conductivity type semiconductor layer 16.

The n-th well layer 24_n may be formed in contact with the first conductivity-type semiconductor layer 16 so that electrons of the first conductivity-type semiconductor layer 16 are easily supplied to the active layer 20.

The first barrier layer 22_1 may serve as a barrier to prevent electrons in the first well layer 24_1 contacting the first barrier layer 22_1 from being transferred to the second conductivity type semiconductor layer 18. Can be.

The thicknesses of the plurality of barrier layers 22_1, 22_2,..., 22_ (n-1) and 22_n may be the same or different from each other. The thicknesses of the plurality of well layers 24_1, 24_2,..., 24_ (n-2) and 24_n may be the same or different from each other.

The thicknesses of the barrier layers 22_1, 22_2,..., 22_ (n-1), 22_n and the well layers 24_1, 24_2,..., 24_ (n-2), 24_n are the same. May be different from each other.

As shown in FIG. 3, the plurality of barrier layers 22_1, 22_2,..., 22_ (n-1), 22_n may include the plurality of well layers 24_1, 24_2,..., 24_ (n-2). , 24_n).

Although only the conduction band energy diagram is shown in FIG. 3, there is also a balance band energy diagram symmetrical with the conduction band based on the energy level.

Since the balance band energy diagram and the conduction band energy diagram have the same shape, the conduction band energy diagram is shown for ease of explanation.

Electrons of the first conductivity type semiconductor layer 16 may be filled from the nth well layer 24_n of the active layer 20 adjacent to the first conductivity type semiconductor layer 16. For example, when electrons are filled in the nth well layer 24_n of the active layer 20, and when the nth well layer 24_n is filled, the (n-1) th well layer 24_ exceeds the nth barrier layer 22_n. (n-1)). In this manner, electrons are filled in each well layer 24_1, 24_2,..., 24_ (n-2), 24_n of the active layer 20, and these electrons recombine with holes present in the balance band. Light may be generated.

Typically, the location where the greatest amount of light is generated may be the second well-type semiconductor layer 18 or the first well layer 24_1 adjacent to the blocking layer 17.

However, electrons are not easily moved to the first well layer 24_1 by the second barrier layer 22_2 adjacent to the first well layer 24_1.

In order to solve this problem, the second barrier layer 22_2 may include a dopant doped at a high concentration.

The dopant may include an n-type dopant or a p-type dopant. The n-type dopant may include an n-type dopant such as Si, Ge, Sn, or the like. The p-type dopant may include Mg, Zn, Ca, Sr, Ba, and the like.

In other words, the first barrier layer 22_1 and the third to n-th barrier layers 22_3 to 22_n do not include any dopants, and only the second barrier layer 22_n is doped at a high concentration. It may include.

By the dopant doped to such a high concentration, the energy barrier of the second barrier layer 22_2 may be bent, as shown in FIG. 4. That is, the energy band of the second barrier layer 22_2 has a peak point adjacent to the first well layer 24_1 and is curved in a concave curve from the peak point. Accordingly, a tunnel region A in which electrons can pass through the tunneling effect can be formed around this peak point.

As the energy band of the second barrier layer 22_2 is bent in a concave curve, the width w of the tunnel region A becomes narrow, so that electrons may pass through the tunnel region A. FIG.

Typically, the electrons must pass through the energy band of the barrier layer to the next well layer, which is not easy for the electrons to cross the energy layer of the barrier layer because the energy band of the barrier layer increases closer to the well layer.

In contrast, in the embodiment, electrons pass through the tunnel region A formed in the second barrier layer 22_2 instead of crossing the energy band of the second barrier 22_n, and the next well layer, for example, the first well layer 24_1. Electrons may move to the first well layer 24_1 more easily. As such, since electrons are more easily provided to the first well layer 24_1, the probability of recombination with the holes increases, and ultimately, an internal quantum efficiency may be improved.

As shown in FIG. 5, the comparative example is a case where no dopant is included in the second barrier layer 22_2, and the embodiment shows a case where a high concentration of dopant is included in the second barrier layer 22_2.

In both Comparative Examples and Examples, as the current density increases, the internal quantum efficiency increases, and from some point, the internal quantum efficiency is saturated.

However, it can be seen that the internal quantum efficiency is higher in the examples than in the comparative examples for all current densities.

Accordingly, in some embodiments, the internal quantum efficiency may be improved by doping the second barrier layer 22_2 adjacent to the first well layer 24_1 of the active layer 20 with a high concentration of dopant.

For example, to form a tunnel region A having a width w through which electrons can pass, the dose of the dopant included in the second barrier layer 22_2 may be in the range of 9E17 to 3E18.

When the dose of the dopant of the second barrier layer 22_2 is less than or equal to 9E17, the dose of the dopant of the second barrier layer 22_2 becomes larger than the width w through which electrons can pass, so that electrons cannot pass.

When the dose of the dopant of the second barrier layer 22_2 is 3E18 or more, the crystallinity of the film quality of the second barrier layer 22_2 may be damaged.

Meanwhile, in the light emitting devices according to the second and third embodiments, the remaining barrier layers except for the first barrier layer 22_1 of the active layer 20, that is, the second barrier layer to the nth barrier layers 22_2 to 22_n All can include dopants.

The second and third embodiments are almost similar to the first embodiment except for the distinction according to the barrier layer containing the dopant.

Therefore, the light emitting device 10 of FIG. 1 may be applied as it is to the description of the second and second embodiments.

6 is a diagram illustrating an energy band diagram of the light emitting device according to the second embodiment.

Referring to FIG. 6, in the light emitting device according to the second embodiment, all of the second barrier layer to the nth barrier layer 22_2 to 22_n include a high concentration of dopant. However, the first barrier layer 22_1 in contact with the second conductivity type semiconductor layer 18 or the blocking layer 17 does not include any dopant. If a high concentration of dopant is included in the first barrier layer 22_1, the tunnel region A is formed in the first barrier to block electrons in the first well layer 24_1 by passing through the first barrier layer 22_1. This is because the first barrier layer 22_1 does not perform its function because it is moved to the layer 17 or the second conductivity-type semiconductor layer 18.

The dopant may include an n-type dopant or a p-type dopant. The n-type dopant may include an n-type dopant such as Si, Ge, Sn, or the like. The p-type dopant may include Mg, Zn, Ca, Sr, Ba, and the like.

Each of the second to n-th barrier layers 22_2 to 22_n may include the same kind of dopant or may include different types of dopants.

For example, all of the second to nth barrier layers 22_2 to 22_n may include Si, which is the same kind, but is not limited thereto.

For example, the second barrier layer 22_2, the fourth barrier layer 22_4,..., The (n-2) th barrier layer 22_ (n-2) and the nth barrier layer 22_n include Si. The third barrier layer 22_3, ..., (n-1) th barrier layer 22_ (n-1) may contain Ge, but is not limited thereto.

Each of the second barrier layer to the nth barrier layer 22_2 to 22_n may include the same conductive dopant or may include different kinds of dopants.

 For example, although all of the second barrier layers to n-th barrier layers 22_2 to 22_n may include Si having the same conductivity type, the present invention is not limited thereto.

For example, the second barrier layer 22_2, the fourth barrier layer 22_4, the (n-2) th barrier layer 22_ (n-2), and the nth barrier layer 22_n are n-type Si. And the third barrier layer 22_3, ..., (n-1) th barrier layer 22_ (n-1) may include p-type Mg, but is not limited thereto.

Dose amounts of the dopants of the second to n-th barrier layers 22_2 to 22_n are different from each other.

The dose of dopants in the second to nth barrier layers 22_2 to 22_n may decrease in the direction of the second conductive semiconductor layer 18 from the first conductive semiconductor layer 16. have.

For example, the third barrier layer 22_3 includes a smaller dose of dopant than the second barrier layer 22_2, and the fourth barrier layer 22_4 has a smaller dose than the third barrier layer 22_3. Dopants may be included. Accordingly, the n-th barrier layer 22_n, which is the last barrier layer and adjacent to the first conductivity-type semiconductor layer 16, contains the least amount of dopant, whereas the second barrier layer 22_2 has the most dose. It may comprise an amount of dopant.

In the second barrier layer 22_2 including the most dose of dopant, a very narrow tunnel region A is formed so that electrons can pass through the tunnel region A very easily.

In contrast, in the n-th barrier layer 22_n including the smallest dose amount of dopant, a relatively wide tunnel region A is formed, so that the dose of electrons passing through the tunnel region A is relatively small.

Therefore, the passage amount of the electrons in the tunnel region A of the barrier layers 22_2 to 22_n in the direction from the first conductive semiconductor layer 16 to the second conductive semiconductor layer 18 may be increased. have. This means that electrons can pass through the barrier layers 22_2 to 22_n more and more easily in the direction from the first conductivity type semiconductor layer 16 to the second conductivity type semiconductor layer 18.

As described above, since the first well layer 24_1 adjacent to the second conductivity type semiconductor layer 18 has the highest internal emission efficiency, electrons of the active layer 20 are transferred to the first conductivity type semiconductor layer 16. In order to move to the first well layer 24_1 rather than the n-th well layer 24_n adjacent to the second conductive semiconductor layer 18 in the direction of the first conductive semiconductor layer 16 as described above. Accordingly, the dopant in the second barrier layer to the nth barrier layer 22_2 to 22_n may be formed in the structure of the active layer 20 to reduce the dose.

7 is a diagram illustrating an energy diagram of a light emitting device according to a third embodiment.

The third embodiment is almost similar to the second embodiment except that the same dose amount of dopant is included in each of the remaining barrier layers 22_2 to 22_n except for the first barrier layer 22_1 in which no dopant is included. .

Therefore, the description of the same components as those of the second embodiment in the third embodiment is omitted, and the description omitted in the third embodiment can be easily understood from the description of the second embodiment.

As shown in FIG. 7, the first barrier layer 22_1 does not include any dopant.

The second to nth barrier layers 22_2 to 22_n may all include the same dose of dopant.

In another embodiment, the second barrier layer 22_2 includes a high concentration of dopant, and the third to nth barrier layers 22_3 to 22_n have a smaller dose than the dopant included in the second barrier layer 22_2. Dopants may be included in the same manner.

In another embodiment, even-numbered barrier layers, such as second barrier layer 22_2, fourth barrier layer 22_4,..., (N-2) th barrier layer 22_ (n-2), and Dose amounts different from the nth barrier layer 22_n and the odd-numbered barrier layers, for example, the third barrier layer 22_3,..., And the (n-1) th barrier layer 22_ (n-1). It may include a dopant of. In other words, the second barrier layer 22_2, the fourth barrier layer 22_4,..., The (n-2) th barrier layer 22_ (n-2) and the nth barrier layer 22_n are the same. The third barrier layer 22_3,..., And the (n-1) th barrier layer 22_ (n-1) include the same amount of dopant, and the second barrier includes the same amount of dopant. Each of the layer 22_2, the fourth barrier layer 22_4, the n-th barrier layer 22_4, and the n-th barrier layer 22_n may include the third barrier layer 22_3,. ... May include a dopant having a higher dose than each of the (n-1) th barrier layers 22_ (n-1).

10: Light emitting element
12: substrate
14: buffer layer
15: light emitting structure
16: first conductivity type semiconductor layer
17: barrier layer
18: second conductive semiconductor layer
20: active layer
22_1, 22_2, ..., 22_ (n-1), 22_n: barrier layer
24_1, 24_2, ..., 24_ (n-2), 24_n: well layer

Claims (17)

A first conductive semiconductor layer;
An active layer including a plurality of barrier layers and a plurality of well layers alternately formed on the first conductive semiconductor layer; And
A second conductive semiconductor layer formed on the active layer,
At least one barrier layer of the barrier layers comprises a dopant. A first conductive semiconductor layer;
A second conductivity type semiconductor layer; And
An active layer including a plurality of barrier layers and a plurality of well layers alternately formed between the first and second conductivity type semiconductor layers,
A first barrier layer is formed in contact with the second conductive semiconductor layer,
A second barrier layer is spaced apart from the first barrier layer,
A first well layer is formed between the first and second barrier layers.
And the second barrier layer includes a high concentration of dopant to form a tunnel region for passing a carrier. The method of claim 1,
A first barrier layer of the barrier layers is in contact with the second conductivity type semiconductor layer,
A first well layer of the well layers is in contact with the first barrier layer,
The second to n-th barrier layers except for the first barrier layer are alternately formed with the second to n-th well layers except for the first well layer. The method of claim 3,
And the second barrier layer in contact with the first well layer comprises a high concentration of dopant. 5. The method of claim 4,
The dopant is any one of a p-type dopant and an n-type dopant. 5. The method of claim 4,
And the second barrier layer includes a tunnel region for passing a carrier. The method according to claim 6,
And the tunnel region is curved in a concave curve from a peak point adjacent to the first well layer. The method of claim 3,
The second to n-th barrier layers all include a high concentration of dopant. 9. The method of claim 8,
Each of the second to nth barrier layers includes the same kind of dopant. 9. The method of claim 8,
Each of the second to nth barrier layers includes a conductive dopant different from each other. 9. The method of claim 8,
The light emitting device of which the dose of each dopant of each of the second to nth barrier layers is different. The method of claim 11,
The dose of the dopant of each of the second to nth barrier layers in the direction of the first conductivity type semiconductor layer from the second conductivity type semiconductor layer is reduced. 9. The method of claim 8,
The second to n-th barrier layers all include the same amount of dopant. 9. The method of claim 8,
The second to nth barrier layers include the same amount of dopant as that of the second barrier layer. 9. The method of claim 8,
The light emitting device of claim 2, wherein the even-numbered barrier layer and the odd-numbered barrier layer of the second to nth barrier layers include dopants having different dose amounts. The method according to claim 1 or 2,
The light emitting device further comprises a blocking layer between the active layer and the second conductive semiconductor layer. The method according to claim 1 or 2,
A dose of the dopant is a light emitting device having a range of 9E17 ~ 3E18.

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