KR20130048606A - Method and apparatus for bonding semiconductor device using uv or micro short wave - Google Patents
Method and apparatus for bonding semiconductor device using uv or micro short wave Download PDFInfo
- Publication number
- KR20130048606A KR20130048606A KR1020110113544A KR20110113544A KR20130048606A KR 20130048606 A KR20130048606 A KR 20130048606A KR 1020110113544 A KR1020110113544 A KR 1020110113544A KR 20110113544 A KR20110113544 A KR 20110113544A KR 20130048606 A KR20130048606 A KR 20130048606A
- Authority
- KR
- South Korea
- Prior art keywords
- ultraviolet
- substrate
- semiconductor chip
- adhesive
- semiconductor device
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
Abstract
A mounting part to mount a substrate and a semiconductor chip to be bonded onto the substrate; An ultraviolet adhesive coating unit for applying an ultraviolet adhesive to be filled between the substrate and the semiconductor chip; An ultraviolet irradiator for irradiating ultraviolet rays for curing the ultraviolet adhesive; A micro short wave irradiation unit generating a micro short wave for bonding between the metal material of the substrate and the metal material of the semiconductor chip and irradiating the semiconductor device; And a semiconductor device bonding apparatus using ultraviolet or micro shortwave is provided, including a pressing portion for pressing the semiconductor chip when the substrate and the semiconductor chip are bonded.
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device bonding apparatus and a method thereof, and more particularly, to perform bonding between semiconductor devices at low or normal temperatures, effectively preventing damage to the semiconductor device, and using ultraviolet or micro shortwaves, which can ensure the reliability of the bonding. A semiconductor device bonding apparatus and its method.
With the recent increase in the use of small multimedia devices such as mobile phones, portable multimedia players (PMPs) and notebooks, the electronic packaging industry is developing into high performance, high integration, miniaturization and light weight.
In addition, to reduce the loss of electrical signals, the flexible and flexible flexible printed circuit boards (FPCBs) and the cheap and reliable rigid printed circuit boards are used in the electrical and electronics industries. There is much interest in direct splicing.
Korean Patent Publication No. 10-2009-0028160 (Chip Bonder) describes a technique for bonding a semiconductor chip on a substrate, and Republic of Korea Patent No. 10-0487998 (Flip Chip Bonder and Bonder method) for bonding flipping The technique is described.
Usually, in order to bond a semiconductor chip to a board | substrate, the method of thermofusion is used, pressurizing by giving a fixed temperature, pressure, and time.
In addition, it serves as an adhesive that bonds the semiconductor chip and the substrate and at the same time
An adhesive resin that prevents vaginal penetration and is an anisotropic conductive film (ACF), anisotropic conductive adhesive (ACA), non-conductive polymer (NCP) or non-conductive film (non-conductive). film, NCF) and the like.
The method of heating a substrate or a semiconductor chip at a constant temperature includes a method using a device equipped with a hot bar equipped with a heater (thermal compression method), a method of using friction heat of a contact part using a micro short wave (micro short wave method), or using a laser. Method (laser method) and the like can be used.
The thermocompression method can damage the mounted components due to the high bonding temperature. For example, when a PET or plastic substrate is used as the material of the flexible printed circuit board, the substrate may be melted. In the case of metal bonding, the bonding process temperature is high, and components mounted on the substrate may be damaged.
Also, adhesives such as anisotropic conductive films (ACFs), anisotropic conductive adhesives (ACAs), or non-conductive polymers (NCP) or non-conductive films (NCF) The joining method using is a problem of high bonding pressure and low reliability.
The problem to be solved by the present invention is to solve the problems of the conventional methods used to bond the semiconductor devices to each other, and to perform the bonding between the semiconductor devices at a low temperature or room temperature to effectively prevent damage to the semiconductor device while improving the reliability of the bonding The present invention provides a semiconductor device bonding apparatus and method thereof that can be ensured.
According to an aspect of the invention, the mounting portion for mounting a substrate and a semiconductor chip to be bonded on the substrate; An ultraviolet adhesive coating unit for applying an ultraviolet adhesive to be filled between the substrate and the semiconductor chip; An ultraviolet irradiator for irradiating ultraviolet rays for curing the ultraviolet adhesive; A micro short wave irradiation unit generating a micro short wave for bonding between the metal material of the substrate and the metal material of the semiconductor chip and irradiating the semiconductor device; And a semiconductor device bonding apparatus using ultraviolet or micro shortwave is provided, including a pressing portion for pressing the semiconductor chip when the substrate and the semiconductor chip are bonded.
The ultraviolet rays irradiated from the ultraviolet irradiator may have a peak wavelength band of 350 nm to 480 nm.
The semiconductor device bonding apparatus may further include a coating unit coating graphite or carbon on at least one side of a metal material of the substrate and a metal material of the semiconductor chip.
The ultraviolet adhesive may be ultraviolet, thermosetting combined adhesive mixed with an ultraviolet curing component to a thermosetting adhesive.
The ultraviolet irradiation unit may be installed to irradiate a portion of the ultraviolet adhesive filled between the substrate and the semiconductor chip flowed out to the edge.
According to another aspect of the invention, the step of mounting the substrate in the mounting portion; Applying an ultraviolet adhesive on the substrate; Placing a bumped semiconductor chip on the substrate to which the ultraviolet adhesive is applied; And irradiating ultraviolet rays for curing the ultraviolet adhesive while pressing the semiconductor chip from the top, and irradiating micro short waves for bonding the bumps of the semiconductor chips and metal pads formed on the substrate. A semiconductor device bonding method is provided.
The ultraviolet light may have a peak wavelength band of 350 nm to 480 nm.
The method of bonding a semiconductor device using the ultraviolet rays or the micro shortwave may further include coating graphite or carbon on at least one side of a metal pad of the substrate and a bump of the semiconductor chip.
According to the present invention, the microshort wave is irradiated by the microshort wave irradiation unit at the same time as the crimping of the crimping unit to bond the bump formed on the semiconductor chip to the pad formed on the substrate, and the ultraviolet adhesive is cured to lower the temperature or room temperature. Bonding between semiconductor devices can be performed on the substrate to effectively prevent damage to the semiconductor device while ensuring the reliability of the bonding.
1 is a block diagram illustrating a semiconductor device bonding apparatus using ultraviolet light or micro shortwave waves according to an embodiment of the present invention.
2 is a view illustrating a semiconductor device for explaining a method of bonding a semiconductor device using ultraviolet rays or microshort waves according to an embodiment of the present invention.
3 is a flowchart illustrating a method of bonding a semiconductor device using ultraviolet rays or microshort waves according to an embodiment of the present invention.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, etc. of constituent elements can be exaggerated for convenience. Like numbers refer to like elements throughout.
1 is a block diagram illustrating a semiconductor device bonding apparatus using ultraviolet light or micro shortwave waves according to an embodiment of the present invention.
Referring to FIG. 1, the semiconductor
The
The micro short
The
The
The ultraviolet
The
The
The
2 is a view illustrating a semiconductor device for explaining a method of bonding a semiconductor device using ultraviolet rays or microshort waves according to an embodiment of the present invention.
Referring to FIG. 2, a
3 is a flowchart illustrating a method of bonding a semiconductor device using ultraviolet rays or microshort waves according to an embodiment of the present invention.
2 and 3, the
The ultraviolet
The
The
The pressure is applied to the upper portion of the
As the pressure is applied to the upper portion of the
In addition, the
When the
Thereafter, a heat treatment process may be performed to improve the curing rate of the
At the same time as the crimping
In addition, since the peripheral portion of the adhesive is to be cured by light or heat, the peripheral portion of the insulating adhesive pressed and spread between the semiconductor chip and the substrate can be quickly and stably cured.
Meanwhile, at least one of the
When carbon or graphite is coated on the surface of the
The invention being thus described, it will be obvious that the same way may be varied in many ways. Such modifications are intended to be within the spirit and scope of the invention as defined by the appended claims.
For example, in the embodiment of the present invention, a semiconductor device having flip chip bonding has been described. However, the present invention is not limited thereto and can be modified as many as possible. In addition, in the embodiments of the present invention, the bonding between the substrate and the semiconductor chip has been described, but the present invention is not limited thereto, and the present invention may be modified and applied to the bonding between the substrate and another substrate. In addition, although the bonding between the pads and the bumps of the substrate has been described with respect to the bonding between the metal materials in the embodiment of the present invention, the present invention is not limited thereto, and the present invention is not limited thereto. It can be modified and applied.
100 semiconductor
120: micro short wave irradiation unit 130: mounting part
140: crimping section 150: UV adhesive coating
160: coating treatment unit 170: transfer unit
180
211: pad 220: semiconductor chip
230: ultraviolet adhesive 240: bump
Claims (8)
An ultraviolet adhesive coating unit for applying an ultraviolet adhesive to be filled between the substrate and the semiconductor chip;
An ultraviolet irradiator for irradiating ultraviolet rays for curing the ultraviolet adhesive;
A micro short wave irradiation unit generating a micro short wave for bonding between the metal material of the substrate and the metal material of the semiconductor chip and irradiating the semiconductor device; And
And a crimping part for crimping the semiconductor chip at the time of bonding the substrate and the semiconductor chip.
The ultraviolet-ray irradiated from the said ultraviolet irradiation part has a peak wavelength band of 350 nm-480 nm, The semiconductor device bonding apparatus using ultraviolet-ray or a micro short wave.
And a coating part for coating graphite or carbon on at least one side of the metal material of the substrate and the metal material of the semiconductor chip.
The ultraviolet adhesive is a semiconductor device bonding apparatus using ultraviolet or micro shortwave, characterized in that the ultraviolet-ray, a thermosetting combined type adhesive agent mixed with an ultraviolet curing component to a thermosetting adhesive.
The ultraviolet irradiation unit is a semiconductor device bonding apparatus using ultraviolet or micro shortwave, characterized in that the ultraviolet adhesive filled between the substrate and the semiconductor chip to irradiate the portion flowing out to the edge.
Applying an ultraviolet adhesive on the substrate;
Placing a bumped semiconductor chip on the substrate to which the ultraviolet adhesive is applied;
Irradiating ultraviolet rays for curing the ultraviolet adhesive while pressing the semiconductor chip from the top, and irradiating microshort waves for bonding the bumps of the semiconductor chip and the metal pad formed on the substrate. Semiconductor device bonding method used.
The ultraviolet light has a peak wavelength band of 350nm ~ 480nm, the semiconductor device bonding method using ultraviolet or micro shortwave.
And coating graphite or carbon on at least one side of the metal pad of the substrate and the bump of the semiconductor chip.
Priority Applications (1)
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KR1020110113544A KR101274674B1 (en) | 2011-11-02 | 2011-11-02 | Method and apparatus for bonding semiconductor device using uv or micro short wave |
Applications Claiming Priority (1)
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KR1020110113544A KR101274674B1 (en) | 2011-11-02 | 2011-11-02 | Method and apparatus for bonding semiconductor device using uv or micro short wave |
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KR20130048606A true KR20130048606A (en) | 2013-05-10 |
KR101274674B1 KR101274674B1 (en) | 2013-06-17 |
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KR1020110113544A KR101274674B1 (en) | 2011-11-02 | 2011-11-02 | Method and apparatus for bonding semiconductor device using uv or micro short wave |
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KR100628900B1 (en) * | 2000-04-25 | 2006-09-27 | 후지쯔 가부시끼가이샤 | Method of mounting semiconductor chip |
JP2005033053A (en) * | 2003-07-08 | 2005-02-03 | Lintec Corp | Manufacturing method of semiconductor device and semiconductor device |
TWI391037B (en) * | 2009-11-09 | 2013-03-21 | Advance Materials Corp | Pad structure and manufacturing method thereof |
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