KR20130046648A

KR20130046648A - Apparatus for treating substrate

Info

Publication number: KR20130046648A
Application number: KR1020110111163A
Authority: KR
Inventors: 김윤호; 김선용; 김성우
Original assignee: 세메스 주식회사
Priority date: 2011-10-28
Filing date: 2011-10-28
Publication date: 2013-05-08

Abstract

PURPOSE: A substrate processing apparatus is provided to prevent backflow of gas by arranging a guide plate on a path where a process gas and a reaction byproduct flow backward. CONSTITUTION: A substrate support part supports a substrate. A gas supply part(300) supplies a process gas into a process chamber. A gas discharging part(500) exhausts the gas to the outside. A gas flow controlling part(600) is positioned in the process chamber. The gas flow controlling part changes gas flow to the gas discharging part.

Description

Substrate Processing Unit {APPARATUS FOR TREATING SUBSTRATE}

The present invention relates to a substrate processing apparatus, and more particularly, to an apparatus for processing a substrate using plasma.

Plasma is an ionized gas that is produced by very high temperatures, strong electric fields, or electromagnetic fields, and consists of ions, electrons, radicals, and so on. Plasma is applied to a variety of semiconductor device manufacturing processes.

Korean Laid-Open Patent Publication No. 10-2009-124754 discloses a semiconductor device manufacturing apparatus using plasma. The process gas is supplied into the process chamber and excited in the plasma state by the high frequency power applied from the plasma generator. The excited process gas is supplied to the substrate to treat the surface of the substrate, and is exhausted out of the process chamber through the pumping hole after the substrate treatment.

Since the hopping hole exhausts the process gas at a fixed position, the process gas flowing inside the process chamber travels along a fixed path. This process gas flow hardly changes the process processing map of the substrate. In addition, if a process error occurs during operation of the device, such as when the pump stops operating suddenly, the internal pressure of the process chamber may be lower than the pressure of the pumping hole, causing process gases and reaction byproducts to flow back into the process chamber and contaminate the substrate. have.

Embodiments of the present invention provide a substrate processing apparatus capable of uniformizing the processing according to the area of the substrate.

Embodiments of the present invention also provide a substrate processing apparatus capable of minimizing backflow of process gases and reaction byproducts.

A substrate processing apparatus according to an embodiment of the present invention includes a process chamber having a space formed therein; A substrate support part located in the process chamber and supporting a substrate; A gas supply unit supplying a process gas into the process chamber; A gas exhaust unit configured to exhaust the process gas staying inside the process chamber to the outside of the process chamber; And a gas flow controller positioned in the process chamber and changing a flow of a process gas flowing toward the gas exhaust unit.

The gas control unit may further include: a first fixing ring surrounding the substrate support; A second fixing ring provided along an inner surface of the process chamber and surrounding the first fixing ring; And guide plates connecting the first fixing ring and the second fixing ring, the guide plates having a guide surface for changing the flow of the process gas, wherein the guide plates have a rotation axis parallel to a radial direction of the first fixing ring. It may be rotatable about the center.

In addition, the guide plates may be provided in plural and spaced apart from each other along the circumference of the first fixing ring, and may be disposed radially in the radial direction of the first fixing ring.

In addition, the gas adjusting unit may further include a driving unit for individually rotating the guide plate about the rotation axis.

In addition, the gas control unit may further include a driving unit for rotating the guide plate about the rotation axis at the same time.

According to embodiments of the present invention, the flow of the process gas is controlled, so that the process may be uniformly performed according to the area of the substrate.

In addition, according to the embodiments of the present invention, since the guide plates are located on the path through which the process gas and the reaction byproduct flow back, the back flow of the process gas and the like may be minimized.

1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a perspective view illustrating a gas flow adjusting unit of FIG. 1. FIG.
3 and 4 are perspective views showing the angle of the guide plate of Figure 2 is adjusted.

Hereinafter, a substrate processing apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus 10 processes the substrate W using plasma. The substrate processing apparatus 10 includes a process chamber 100, a substrate support 200, a gas supply 300, a plasma generator 400, a gas exhaust 500, and a gas flow controller 600. .

The process chamber 100 provides a space in which a substrate W processing process is performed. The process chamber 100 includes a body 110 and a hermetic cover 120.

The body 110 has a space having an open upper surface therein. The inner space of the body 110 is provided as a space in which the substrate (W) treatment process is performed. Body 110 is provided with a metal material. The body 100 may be provided of aluminum material. An exhaust hole 102 is formed in the bottom surface of the body 110. The exhaust hole 102 provides a passage through which reaction by-products generated during the process and the process gas staying in the inner space of the body are discharged to the outside of the process chamber 100.

The sealing cover 120 covers the open upper surface of the body 110. The sealing cover 120 is provided in a plate shape and seals the internal space of the body 110. The sealing cover 120 may be provided with a material different from that of the body 110. The hermetic cover 120 may be provided as a dielectric substance.

The substrate support part 200 is positioned inside the body 110. The substrate support part 200 supports the substrate (W). The substrate support part 200 includes an electrostatic chuck that adsorbs the substrate W by using electrostatic force. The electrostatic chuck 200 includes a support plate 210 and a support shaft 220. The support plate 210 is provided in a generally circular plate and has a diameter larger than that of the substrate W. As shown in FIG. The substrate W is placed on the upper surface of the support plate 210. A lower electrode (not shown) and a heater (not shown) may be embedded in the support plate 210. The lower electrode is electrically connected to an external power source (not shown). An electric force acts between the lower electrode and the substrate W by a current applied from an external power source, and the substrate W is attracted to the support plate 210 by the electric force. The external power supply includes a DC power supply.

The heater is electrically connected to an external power source (not shown), and generates heat by resisting an externally applied current. The generated heat is transferred to the substrate W through the support plate 210. The substrate W is heated to a predetermined temperature by the heat generated by the heater.

The support shaft 220 is positioned below the support plate 210 and supports the support plate 210.

The gas supply unit 300 supplies a process gas into the process chamber 100. The gas supply unit 300 includes a gas supply nozzle 310, a gas supply line 320, and a gas storage unit 330.

The gas supply nozzle 310 injects a process gas into the process chamber 100. The gas supply nozzle 310 is provided in a ring shape and is located between the body 110 and the sealing cover 120. The gas supply nozzle 310 may have an inner diameter corresponding to the inner diameter of the body 110. The gas circulation hole 311 is formed in the gas supply nozzle 310. The gas circulation hole 311 is formed along the circumference of the gas supply nozzle 310 and provided in a ring shape. The gas circulation hole 311 provides a space in which the process gas supplied through the gas supply line 320 circulates. The gas injection hole 312 connects the gas circulation hole 311 and the internal space of the process chamber 100. A plurality of gas injection holes 312 are spaced apart from each other along the inner surface of the gas supply nozzle 310. Process gas circulating in the gas circulation hole 312 is supplied into the process chamber 100 through the gas injection holes 312.

The plasma generating unit 400 applies high frequency power to excite the process gas staying inside the process chamber 100. The plasma generator 400 includes an antenna 410 and an upper power source 420. The antenna 410 is located above the hermetic cover 120. The antenna 410 may be arranged such that ring-shaped coils having different radii are located at the same center. The antenna 410 applies a high frequency current generated from the upper power source 420 into the process chamber 100. The high frequency power applied from the antenna 410 excites the process gas staying inside the process chamber 100. The excited process gas is provided to the substrate W to treat the substrate W. The excited process gas may perform a diffusion process.

The gas exhaust part 500 exhausts the reaction by-products generated during the process and the gas remaining in the internal space of the process chamber 100 to the outside of the process chamber 100. The exhaust member 500 includes an exhaust line 510 and a vacuum pump 520. The exhaust line 510 is connected to the exhaust hole 102 and provides a passage through which reaction byproducts and gases are exhausted. The vacuum pump 520 is installed on the exhaust line 510 and applies a vacuum pressure to the exhaust line 510. The inside of the body 110 is reduced to a predetermined pressure by the exhaust process.

The gas flow controller 600 is located inside the process chamber 100 and changes the flow of the process gas flowing toward the gas exhaust unit 500. FIG. 2 is a perspective view illustrating a gas flow adjusting unit of FIG. 1. FIG. 1 and 2, the gas flow controller 600 includes a first fixing ring 610, a second fixing ring 620, a guide plate 630, and a driving unit 640.

The first fixing ring 610 is located in the space between the process chamber 100 and the substrate support 200. The first fixing ring 610 is provided in a ring shape and surrounds the substrate support 200. The first fixing ring 610 surrounds the support shaft 220 and may be fixedly coupled to the support shaft 220.

The second fixing ring 620 is provided in a ring shape having a radius larger than that of the first fixing ring 610. The second fixing ring 620 has the same center as the first fixing ring 610 and is arranged to surround the first fixing ring 610. The second fixing ring 620 may be provided along the inner surface of the process chamber 100 and may be fixedly coupled to the process chamber 100.

Guide plate 630 is provided as a thin plate of rectangular shape. The guide plate 630 is provided between the first fixing ring 610 and the second fixing ring 620 and connects the first fixing ring 610 and the second fixing ring 620. Guide plate 630 has a guide face 631. The guide surface 631 is a surface in contact with the process gas flowing toward the gas exhaust part 500, and changes the flow of the process gas. Protrusions 632 are formed at both ends of the guide plate 630, respectively. The protrusion 632 protrudes in the longitudinal direction of the guide plate 30 from both ends of the guide plate 630. The protrusions 632 are respectively inserted into grooves formed in the outer circumferential surface of the first fixing ring 610 and the inner circumferential surface of the second fixing ring 620. The guide plate 630 is disposed in parallel with the radial direction of the first and second fixing rings 610 and 620 in the longitudinal direction thereof. The guide plate 630 is rotatable about a rotation axis parallel to the radial direction of the first and second fixing rings 610 and 620. The protrusion 632 is provided as a rotating shaft on which the guide plate 630 rotates. The guide plates 630 are provided in plurality apart from each other along the circumference of the first fixing ring 610. The guide plates 630 are disposed radially in the radial direction of the first and second fixing rings 610, 620.

The driver 640 rotates the guide plates 630. The driver 640 is individually connected to the guide plates 630. The driver 640 may rotate the guide plates 630 individually. In addition, the driving unit 640 may rotate the guide plate 630 at the same time. By the rotation of the guide plate 630, the angle formed by the guide surface 631 with respect to the vertical direction can be changed. By changing the inclination angle of the guide surface 631, the area of the guide surface 631 toward the internal space of the process chamber 100 is changed. As illustrated in FIG. 3, the guide plate 630 may be rotated such that the guide surface 631 is disposed in parallel with the vertical direction. In addition, the guide plate 630 may be rotated such that the guide surface 631 is vertically disposed with respect to the vertical direction as shown in FIG. 4. In addition, the guide plate 630 may be rotated such that the guide surface 631 is disposed at a predetermined angle with respect to the vertical direction as shown in FIG. 2. By the rotation of the guide plate 630, the guide surface 631 may be inclined from 0 ° to 90 ° with respect to the vertical direction.

Rotation of the guide plates 630 changes the flow of the process gas flowing toward the gas exhaust 500. In addition, rotation of the guide plates 630 adjusts the area of the space 640 between adjacent guide plates 630. As the inclination angle of the guide surface 631 in the vertical direction decreases, the area between the spaces 640 of the guide plates 630 increases, and as the inclination angle increases, the area between the spaces 640 between the guide plates 630 decreases. do. By changing the area of the space 640 between the guide plates 630, the flow rate of the process gas passing through the gas flow control unit 600 is changed, and the pressure inside the process chamber 100 is changed. In addition, the guide plates 630 may be disposed to be inclined at a predetermined angle in a diagonal direction, thereby minimizing a backflow phenomenon of the process gas due to an abnormal installation. If a process error, for example, the driving of the vacuum pump 520 suddenly stops while the equipment is in operation, the process gas that the internal pressure of the process chamber 100 is lower than the pressure of the gas exhaust line 510 and stays in the gas exhaust line 510 and The reaction by-products may flow back into the process chamber 100. The guide plates 630 may be inclined on a path through which the process gas and the reaction by-products flow back into the process chamber 100, thereby minimizing the flow rates of the counter gas and the reaction by-products.

In addition, since the driving unit 640 rotates the guide plates 630 individually, the flow rate of the process gas passing through the gas flow control unit 600 may be adjusted according to the area of the gas flow control unit 600. As a result, the flow rate of the process gas flowing toward the gas flow controller 600 varies depending on the region inside the process chamber 100, and the flow rate of the process gas supplied to the substrate W varies according to the region of the substrate W. FIG. can be changed. The flow rate control of the process gas may concentrate the process gas in a specific region of the substrate W, thereby implementing a desired process process map.

In the above embodiment, the substrate support part 200 has been described as being an electrostatic chuck. Alternatively, the substrate support part may support the substrate by various methods. For example, the substrate support 200 may be provided as a vacuum chuck to suck and hold the substrate in a vacuum.

In addition, in the above embodiment, the diffusion process was performed using plasma, but the substrate processing process is not limited thereto, and various substrate processing processes using plasma, such as a deposition process, an etching process, an ashing process, and a cleaning process, may be performed. May also be applied.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

100: process chamber 200: substrate support
300: gas supply unit 400: plasma generation unit
500: gas exhaust unit 600: gas flow control unit
610: first fixing ring 620: second fixing ring
630: guide plate 640: drive unit

Claims

A process chamber having a space formed therein;
A substrate support part located in the process chamber and supporting a substrate;
A gas supply unit supplying a process gas into the process chamber;
A gas exhaust unit configured to exhaust the process gas staying inside the process chamber to the outside of the process chamber; And
And a gas flow controller disposed in the process chamber to change a flow of process gas flowing toward the gas exhaust unit.

The method of claim 1,
The gas control unit
A first fixing ring surrounding the substrate support;
A second fixing ring provided along an inner surface of the process chamber and surrounding the first fixing ring; And
Comprising a guide plate for connecting the first fixing ring and the second fixing ring, having a guide surface for changing the flow of the process gas,
And the guide plates are rotatable about a rotation axis parallel to the radial direction of the first fixing ring.