KR20130046648A - Apparatus for treating substrate - Google Patents
Apparatus for treating substrate Download PDFInfo
- Publication number
- KR20130046648A KR20130046648A KR1020110111163A KR20110111163A KR20130046648A KR 20130046648 A KR20130046648 A KR 20130046648A KR 1020110111163 A KR1020110111163 A KR 1020110111163A KR 20110111163 A KR20110111163 A KR 20110111163A KR 20130046648 A KR20130046648 A KR 20130046648A
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- process chamber
- substrate
- fixing ring
- flow
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
The present invention relates to a substrate processing apparatus, and more particularly, to an apparatus for processing a substrate using plasma.
Plasma is an ionized gas that is produced by very high temperatures, strong electric fields, or electromagnetic fields, and consists of ions, electrons, radicals, and so on. Plasma is applied to a variety of semiconductor device manufacturing processes.
Korean Laid-Open Patent Publication No. 10-2009-124754 discloses a semiconductor device manufacturing apparatus using plasma. The process gas is supplied into the process chamber and excited in the plasma state by the high frequency power applied from the plasma generator. The excited process gas is supplied to the substrate to treat the surface of the substrate, and is exhausted out of the process chamber through the pumping hole after the substrate treatment.
Since the hopping hole exhausts the process gas at a fixed position, the process gas flowing inside the process chamber travels along a fixed path. This process gas flow hardly changes the process processing map of the substrate. In addition, if a process error occurs during operation of the device, such as when the pump stops operating suddenly, the internal pressure of the process chamber may be lower than the pressure of the pumping hole, causing process gases and reaction byproducts to flow back into the process chamber and contaminate the substrate. have.
Embodiments of the present invention provide a substrate processing apparatus capable of uniformizing the processing according to the area of the substrate.
Embodiments of the present invention also provide a substrate processing apparatus capable of minimizing backflow of process gases and reaction byproducts.
A substrate processing apparatus according to an embodiment of the present invention includes a process chamber having a space formed therein; A substrate support part located in the process chamber and supporting a substrate; A gas supply unit supplying a process gas into the process chamber; A gas exhaust unit configured to exhaust the process gas staying inside the process chamber to the outside of the process chamber; And a gas flow controller positioned in the process chamber and changing a flow of a process gas flowing toward the gas exhaust unit.
The gas control unit may further include: a first fixing ring surrounding the substrate support; A second fixing ring provided along an inner surface of the process chamber and surrounding the first fixing ring; And guide plates connecting the first fixing ring and the second fixing ring, the guide plates having a guide surface for changing the flow of the process gas, wherein the guide plates have a rotation axis parallel to a radial direction of the first fixing ring. It may be rotatable about the center.
In addition, the guide plates may be provided in plural and spaced apart from each other along the circumference of the first fixing ring, and may be disposed radially in the radial direction of the first fixing ring.
In addition, the gas adjusting unit may further include a driving unit for individually rotating the guide plate about the rotation axis.
In addition, the gas control unit may further include a driving unit for rotating the guide plate about the rotation axis at the same time.
According to embodiments of the present invention, the flow of the process gas is controlled, so that the process may be uniformly performed according to the area of the substrate.
In addition, according to the embodiments of the present invention, since the guide plates are located on the path through which the process gas and the reaction byproduct flow back, the back flow of the process gas and the like may be minimized.
1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a perspective view illustrating a gas flow adjusting unit of FIG. 1. FIG.
3 and 4 are perspective views showing the angle of the guide plate of Figure 2 is adjusted.
Hereinafter, a substrate processing apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.
1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
Referring to FIG. 1, the
The
The
The
The
The heater is electrically connected to an external power source (not shown), and generates heat by resisting an externally applied current. The generated heat is transferred to the substrate W through the
The
The
The
The
The gas exhaust part 500 exhausts the reaction by-products generated during the process and the gas remaining in the internal space of the
The
The
The
The
Rotation of the
In addition, since the driving
In the above embodiment, the
In addition, in the above embodiment, the diffusion process was performed using plasma, but the substrate processing process is not limited thereto, and various substrate processing processes using plasma, such as a deposition process, an etching process, an ashing process, and a cleaning process, may be performed. May also be applied.
The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.
100: process chamber 200: substrate support
300: gas supply unit 400: plasma generation unit
500: gas exhaust unit 600: gas flow control unit
610: first fixing ring 620: second fixing ring
630: guide plate 640: drive unit
Claims (2)
A substrate support part located in the process chamber and supporting a substrate;
A gas supply unit supplying a process gas into the process chamber;
A gas exhaust unit configured to exhaust the process gas staying inside the process chamber to the outside of the process chamber; And
And a gas flow controller disposed in the process chamber to change a flow of process gas flowing toward the gas exhaust unit.
The gas control unit
A first fixing ring surrounding the substrate support;
A second fixing ring provided along an inner surface of the process chamber and surrounding the first fixing ring; And
Comprising a guide plate for connecting the first fixing ring and the second fixing ring, having a guide surface for changing the flow of the process gas,
And the guide plates are rotatable about a rotation axis parallel to the radial direction of the first fixing ring.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110111163A KR20130046648A (en) | 2011-10-28 | 2011-10-28 | Apparatus for treating substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110111163A KR20130046648A (en) | 2011-10-28 | 2011-10-28 | Apparatus for treating substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20130046648A true KR20130046648A (en) | 2013-05-08 |
Family
ID=48658265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020110111163A KR20130046648A (en) | 2011-10-28 | 2011-10-28 | Apparatus for treating substrate |
Country Status (1)
Country | Link |
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KR (1) | KR20130046648A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110010437A (en) * | 2017-12-05 | 2019-07-12 | 东京毅力科创株式会社 | Exhaust apparatus, processing unit and method for exhausting |
-
2011
- 2011-10-28 KR KR1020110111163A patent/KR20130046648A/en not_active Application Discontinuation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110010437A (en) * | 2017-12-05 | 2019-07-12 | 东京毅力科创株式会社 | Exhaust apparatus, processing unit and method for exhausting |
CN110010437B (en) * | 2017-12-05 | 2021-07-20 | 东京毅力科创株式会社 | Exhaust apparatus, treatment apparatus, and exhaust method |
CN113594018A (en) * | 2017-12-05 | 2021-11-02 | 东京毅力科创株式会社 | Plasma processing apparatus |
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