KR20130037834A

KR20130037834A - Method for depositing film

Info

Publication number: KR20130037834A
Application number: KR1020110102310A
Authority: KR
Inventors: 백우성; 장창영
Original assignee: 주식회사 셀코스
Priority date: 2011-10-07
Filing date: 2011-10-07
Publication date: 2013-04-17

Abstract

PURPOSE: A hybrid sputter cathode and a method for depositing a low-temperature and transparent conductive film using the same are provided to form a transparent electrode layer by minimizing plasma damage to a plastic board, a film, or a next generational organic device. CONSTITUTION: A hybrid sputter cathode comprises a ground shield of an insulating material. A high quality transparent conductivity oxide film is manufactured by mixing two kinds of power sources to the hybrid sputter cathode. The high quality transparent conductivity oxide film has the surface resistance of 200Ω/□ or lower, transmittance in a visual light area of 91%, the surface density of a thin film of 3nm or less.

Description

Hybrid sputter cathode and low temperature transparent conductive film deposition method using same {METHOD FOR DEPOSITING FILM}

The present invention relates to a hybrid sputter cathode and a method for forming a low temperature transparent conductive film using the same.

In particular, a hybrid sputter cathode which can freely apply an individual source and a mixed source to a plasma source for film formation, and can control the intensity of a magnetic field on the surface of a target, thereby forming a metal thin film or an oxide thin film. And a low temperature transparent conductive film forming method using the same.

In general, TCO (Transparent Conductive Oxide) is a transparent conductive oxide, which exhibits light transmittance and electrical conductivity in the visible region, and thus, transparent electrode materials such as solar cells, liquid crystal displays, and touch screens, and electroluminescence. (electroluminescent) element, surface heating element. It is applied to various fields such as heat reflection material.

In the case of glass, which is mostly used as a substrate in these fields, there are limitations such as damage, flexibility, and thickness of the substrate. Research into the technology of depositing TCO thin film on a transparent plastic substrate is being actively conducted

Chemical vapor deposition (CVD), e-beam evaporation, spray-pyrolysis. Although there are sputtering and the like, most methods require a high manufacturing temperature or a post-heat treatment process of 300 ° C. or higher, so that manufacturing on the plastic substrate and film having excellent flexibility as well as an increase in manufacturing price is difficult.

In addition, in order to commercialize by coating a TCO thin film on a plastic film, it is possible to deposit a large area, have excellent electrical and optical properties, and be manufactured at low cost.

As a deposition method that satisfies these conditions, a magnetron sputtering method is possible. The sputtering process enables fast deposition rate, easy film thickness control, high visible light transmittance and low resistivity compared to other deposition processes, and a large area process. As a technology that ensures stability and reliability, it is widely used as a TCO forming process of functional electronic devices.

However, since plastic substrates are easily deformed by heat, they are limited by manufacturing conditions such as sputtering power, substrate temperature, and heat treatment temperature, unlike glass substrates. In addition, when the TCO thin film is manufactured at room temperature, its application area is reduced due to the deterioration of the TCO's inherent electrical and optical properties, and therefore, appropriate deposition conditions other than those of conventional glass substrates should be investigated. And room temperature process suitable for various next-generation organic microectronic devices and flexible microectronic devices To form a high-performance transparent electrode, it is necessary to develop a new method of room temperature and plasma damage free TCO sputtering process that improves the disadvantages of the existing sputtering process.

In particular, currently developed technologies are focused on the process technology to minimize the demage in the substrate, so there is a lack of mass production technology for actual production. The biggest problem among them is to secure the deposition rate during the sputtering process. In addition, there is a problem that the choice of process variables is very narrow.

The present invention has been made to solve the problems of the prior art as described above, the present invention hybrid sputter cathode is capable of forming a transparent electrode layer by minimizing the plasma demage on a plastic substrate or film, or next-generation organic device substrate and mass production SUMMARY OF THE INVENTION An object of the present invention is to provide a hybrid sputter cathode which is an efficient method applicable to a process and a low temperature transparent conductive film deposition method using the same.

One embodiment of the present invention for achieving the above object, in the hybrid sputter cathode, the hybrid sputter cathode is characterized in that it comprises a ground shield (Ground shield) made of an insulating material.

According to another embodiment of the present invention, in the low temperature transparent conductive film deposition method, two kinds of power sources are mixed and applied to a hybrid sputter cathode to have a surface sheet resistance of 200 mW / square or less, and a light transmittance in the visible region of 91%. And the surface density of the thin film is 3 nm or less.

When the transparent conductive film is formed, it is possible to form a low temperature film (when the substrate reference temperature is less than 120 ° C), and can control sheet resistance, light transmittance, thin film surface density, and film deposition rate, compared to the conventional sputter cathode. It has excellent reliability and economy, and can be used to manufacture high quality TCO (transparent conductive oxide film) with surface sheet resistance of 200Ω / □ or less, light transmittance of 91% or more in the visible region and 3nm or less surface density of thin film. It is effective.

1.hybrid sputter cathode:

1-1. Conventional magnetron cathodes can apply only one type of power source, while hybrid sputter cathodes can apply different types of power sources.

Ex) DC Power, RF Power, Pulse DC Power can be applied.

1-2. Hybrid sputter cathodes can be applied by mixing two power sources.

Ex) DC + RF Power, Pulse DC + RF Power

1-3. Depending on the type of transparent conductive oxide (TCO), the hybrid sputter cathode is a technology that can adjust the strength of the magnetic field on the surface of the target

1-4. When TCO (transparent conductive oxide) is deposited by sputtering, an oxide film is formed on the ground shield of the cathode, and secondary electrons generated during sputtering remain on the surface, affecting thin film quality and generation of impurities. Hybrid cathode fabrication technology that prevents this by using insulating material instead of conductive material for ground shield

2. Method of manufacturing TCO (transparent conductive oxide) using hybrid sputter cathode

2-1. High-quality TCO (transparent conductive oxide) with a surface spherical resistance of 200 Ω / □ or less, 91% light transmittance in the visible region, and 3 nm or less surface density of the thin film. Manufacturing method

*. Two power sources: Pulse DC + RF Power

Pulse DC: Frequency is 20KHz and Pulse interval is 2.0㎲.

RF Power: Frequency is 13.56MHz.

Claims

In a hybrid sputter cathode,
The hybrid sputter cathode is characterized in that it comprises a ground shield (Ground shield) made of an insulating material.

In the low temperature transparent conductive film deposition method,
The hybrid sputter cathode is characterized by mixing two kinds of power sources to the hybrid sputter cathode and applying a surface sheet resistance of 200 mW / square or less, a light transmittance of 91% in the visible region and a surface density of 3 nm or less. Low temperature transparent conductive film deposition method using.