CN206516632U - A kind of display base plate, display panel and coating apparatus - Google Patents

Abstract

The embodiment of the utility model discloses a display substrate, a display panel and a coating device. The display substrate includes: a base substrate, a first film layer, a protective film layer and a second film layer sequentially stacked on the base substrate; wherein, the crystallization temperature of the protective film layer is lower than that of the first film layer The boiling point of the material; the crystallization temperature of the second film layer is higher than the boiling point of the material of the first film layer; the boiling point of the material of the second film layer is higher than the boiling point of the material of the first film layer, so The boiling point of the material of the protective film layer is not lower than the boiling point of the material of the second film layer. In this solution, the protective film layer can prevent the material of the first film layer from evaporating out and contaminating the second film layer, thereby ensuring the film-forming quality of the second film layer.

Description

A display substrate, display panel and coating device

technical field

The utility model relates to the field of display technology, in particular to a display substrate, a display panel and a coating device.

Background technique

At present, in the thin film sputtering process, the target source is deposited on the substrate by sputtering to crystallize to form a thin film. The performance of the thin film is closely related to the crystallization temperature. Different crystallization temperatures lead to different densities of the formed thin films. In order to meet actual needs, it is necessary to Crystallization at a specific temperature can form a thin film that meets the requirements. However, if the required crystallization temperature of the film layer being prepared is higher than the boiling point of the prepared film layer below, the material of the prepared film layer will evaporate and penetrate into the film layer being prepared. The film layer causes pollution, resulting in a decrease in the film quality. For example, when preparing indium tin oxide (Indium Tin Oxide, ITO) thin films on color filter substrates, generally the ITO film layer crystallized at low temperature is not dense enough, and the resistivity is relatively high, which is likely to cause abnormal display and moiré (mura), so High-temperature crystallization is required, but due to the high crystallization temperature of the ITO film, the color resist prepared on the color filter substrate will evaporate due to high temperature, which will pollute the prepared ITO film and reduce the film-forming quality of the ITO film.

Utility model content

The purpose of the embodiment of the utility model is to provide a display substrate, a display panel and a coating device, which are used to solve the problem that during the process of sputtering the film layer, the prepared film layer will cause pollution to the film layer being prepared due to high temperature evaporation, resulting in The problem of reduced film quality.

The purpose of the utility model embodiment is achieved through the following technical solutions:

A display substrate, comprising a base substrate, a first film layer, a protective film layer and a second film layer sequentially stacked on the base substrate; wherein, the crystallization temperature of the protective film layer is lower than that of the first film layer The boiling point of the material; The crystallization temperature of the second film layer is higher than the boiling point of the material of the first film layer;

The boiling point of the material of the second film layer is higher than that of the material of the first film layer, and the boiling point of the material of the protective film layer is not lower than the boiling point of the material of the second film layer.

Preferably, the first film layer is a color resist layer; the second film layer is a transparent electrode layer; the material of the protective film layer is a transparent conductive material.

Preferably, the material of the protective film layer is graphene, transparent metal or transparent metal oxide.

Preferably, the material of the protective film layer is the same as that of the second film layer.

Preferably, the material of the color resistance layer is benzophenone imine; the material of the transparent electrode layer is ITO; the material of the protective film layer is ITO.

Preferably, the crystallization temperature of the protective film layer ranges from 100°C to 150°C; the crystallization temperature of the second film layer ranges from 200°C to 250°C.

Preferably, the crystallization temperature of the protective film layer is 130 degrees Celsius; the crystallization temperature of the second film layer is 230 degrees Celsius.

Preferably, the ratio of the film thickness of the protective film layer to the film thickness of the second film layer ranges from 1:9 to 1:1.

A display panel, comprising the display substrate as described in any one of the above.

The beneficial effects of the utility model embodiment are as follows:

In the display substrate and display panel provided by the embodiments of the present invention, since a protective film layer is provided on the first film layer, the material of the protective film layer has a relatively high boiling point, so it is more stable than the first film layer at a certain high temperature, and can The first film layer is protected, and when the second film layer is sputtered at a crystallization temperature higher than the boiling point of the material of the first film layer, the protective film layer can prevent the material of the first film layer from evaporating out and contaminating the second film layer. The film layer ensures the film-forming quality of the second film layer.

A coating device, comprising a chamber; said chamber is provided with:

It is used to perform the first sputtering with the material of the second film layer on the base substrate formed with the first film layer to form a protective film layer, and use the second film layer on the base substrate formed with the protective film layer The material of the second film layer is sputtered for the second time to form the coating unit of the second film layer; wherein, the crystallization temperature of the protective film layer is lower than the boiling point of the material of the first film layer; the second film layer The crystallization temperature of the layer is higher than the boiling point of the material of the first film layer; the boiling point of the material of the second film layer is higher than the boiling point of the material of the first film layer;

It is used to control the crystallization temperature of the protective film layer and the second film layer, and before the second sputtering is performed with the material of the second film layer on the base substrate formed with the protective film layer, the protective film layer The heating annealing unit for annealing the film layer.

Preferably, the heating annealing unit is located at the bottom of the chamber, and the coating unit is located at the top of the chamber;

Alternatively, the heating and annealing unit is located at the top of the chamber, and the coating unit is located at the bottom of the chamber.

Preferably, the coating device is a magnetron sputtering coating device.

The beneficial effects of the utility model embodiment are as follows:

In the coating device provided by the embodiment of the present invention, a coating unit and a heating annealing unit are arranged in the chamber, and a protective film layer can be provided on the first film layer by using this device. The boiling point of the material of the protective film layer is relatively high, so in It is more stable than the first film layer at a certain high temperature, can protect the first film layer, and can anneal the protective film layer to ensure its compactness, at a crystallization temperature higher than the boiling point of the material of the first film layer When sputtering the second film layer, the protective film layer can prevent the material of the first film layer from evaporating out and contaminating the second film layer, thus ensuring the film-forming quality of the second film layer. In this scheme, since the protective film layer of the first film layer and the coating and annealing of the second film layer can be integrated in the same equipment, the handling process can be reduced, the process is simplified, and the impact of other impurities on the second film layer is also reduced. Pollution further ensures the film quality.

Description of drawings

Fig. 1 is a schematic structural diagram of a display substrate provided by an embodiment of the present invention;

Fig. 2 is a schematic diagram of a coating device provided by an embodiment of the present invention;

Fig. 3 is another kind of coating device schematic diagram that the utility model embodiment provides;

Fig. 4 is a schematic structural diagram of a heating annealing unit provided by an embodiment of the present invention;

Fig. 5 is a schematic structural diagram of another heating annealing unit provided by an embodiment of the present invention.

detailed description

A display substrate, a display panel and a film coating device provided by the present invention will be described in more detail below with reference to the drawings and embodiments.

An embodiment of the present invention provides a display substrate, including a base substrate, a first film layer, a protective film layer, and a second film layer sequentially stacked on the base substrate; wherein, the crystallization temperature of the protective film layer is lower than that of the first film layer. The boiling point of the material of film layer; The crystallization temperature of the second film layer is higher than the boiling point of the material of the first film layer; The boiling point of the material of the second film layer is higher than the boiling point of the material of the first film layer, and the material of the protective film layer The boiling point is not lower than the boiling point of the material of the second film layer.

In the embodiment of the utility model, since a protective film layer is provided on the first film layer, the material of the protective film layer has a relatively high boiling point, so it is more stable than the first film layer at a certain high temperature, and the first film layer can be protected. When sputtering the second film layer at a crystallization temperature higher than the boiling point of the material of the first film layer, the protective film layer can prevent the material of the first film layer from evaporating out and contaminating the second film layer, ensuring that the second film layer The film quality of the film layer.

Wherein, there are various specific structures of the first film layer and the second film layer. For example, in an organic light-emitting diode (Organic Light-emitting Diode, OLED) display panel, the first film layer may be an organic light-emitting layer, and the second film layer may be an organic light-emitting layer. It may be a cathode electrode layer. For another example, in a liquid crystal display (Liquid Crystal Display, LCD) display panel, on a color filter substrate, the first film layer may be a color resist layer, and the second film layer may be a transparent electrode layer. Other possible structures are not listed here. Hereinafter, the structure in which the first film layer is a color resist layer and the second film layer is a transparent electrode layer is taken as an example for specific description.

Preferably, the first film layer is a color resist layer; the second film layer is a transparent electrode layer; the material of the protective film layer is a transparent conductive material. During specific implementation, the material of the protective film layer may be, but not limited to, graphene, transparent metal or transparent metal oxide. The transparent metal may be transparent metal silver, aluminum, etc., and the transparent metal oxide may be ITO, indium zinc oxide (Indium Zinc Oxide, IZO), etc., which will not be listed here.

In order to simplify the manufacturing process, preferably, the material of the protective film layer is the same as that of the second film layer. In this way, since the protective film layer and the second film layer are made of the same material, the sputtering of the protective film layer and the second film layer can be completed in the same chamber during the manufacturing process without changing equipment, which is beneficial to improve production efficiency.

If the material of the color resist layer is benzophenone imine; the material of the transparent electrode layer is ITO; correspondingly, the material of the protective film layer is ITO.

Among them, the boiling point of benzophenone imine is between 151°C and 153°C.

Based on this, preferably, the crystallization temperature of the protective film layer ranges from 100°C to 150°C; the crystallization temperature of the second film layer ranges from 200°C to 250°C.

Preferably, the crystallization temperature of the protective film layer is 130 degrees Celsius; the crystallization temperature of the second film layer is 230 degrees Celsius.

During specific implementation, the thickness of the protective film layer is also related to the protective effect it can play. If the thickness of the protective film layer is too thin, the material of the first film layer is easy to seep through the protective film layer, and the protective effect is small. If it is too thick, although the protective effect is better, the overall thickness will be increased. Therefore, preferably, the ratio of the film thickness of the protective film layer to the film thickness of the second film layer is in the range of 1:9˜1:1.

For example, the material of the transparent electrode layer is ITO, and the general thickness is 100nm-160nm. If the thickness of the transparent electrode ITO is 100nm, correspondingly, the thickness range of the protective film layer can be 10nm-50nm; if the thickness of the transparent electrode ITO is 160nm, correspondingly, the thickness range of the protective film layer is 16nm-80nm.

Hereinafter, a display substrate provided by an embodiment of the present invention will be described in more detail by taking ITO as an example for the material of the protective film layer and the second film layer.

The structure of the display substrate in this embodiment is as shown in Figure 1: it includes a base substrate 11, a black matrix 12 located on the base substrate covering the gap between adjacent pixel regions, a color resist layer 13 located in the pixel region, And the protective film layer 14 located on the color resist layer 13 and the transparent electrode layer 15 located on the protective film layer.

Wherein, the color resist layer includes three color resists of R, G and B.

Wherein, the materials of the protective film layer 14 and the transparent electrode layer 15 are both ITO.

Wherein, the crystallization temperature of the protective film layer 14 is 130 degrees Celsius.

Wherein, the crystallization temperature of the transparent electrode layer 15 is 230 degrees Celsius.

Wherein, the film thickness ratio of the protective film layer 14 and the transparent electrode layer 15 may be 1:9.

In the display substrate of this embodiment, since the provided protective film layer can prevent the color resist layer from evaporating and contaminating the transparent electrode layer, the film forming quality is improved.

Based on the same concept of the utility model, an embodiment of the present utility model further provides a display panel, including the display substrate as described in any of the above embodiments.

Based on the same utility model concept, the embodiment of the utility model also provides a coating device, including a chamber; the chamber is provided with:

Used to perform the first sputtering with the material of the second film layer on the base substrate formed with the first film layer to form a protective film layer, and use the second film layer on the base substrate formed with the protective film layer Layer material is sputtered for the second time to form the coating unit of the second film layer; wherein, the crystallization temperature of the protective film layer is lower than the boiling point of the material of the first film layer; the crystallization temperature of the second film layer is higher than that of the first film layer The boiling point of the material of film layer; The boiling point of the material of the second film layer is higher than the boiling point of the material of the first film layer;

It is used to control the crystallization temperature of the protective film layer and the second film layer, and to perform annealing treatment on the protective film layer before the second sputtering with the material of the second film layer on the base substrate formed with the protective film layer Heating the annealing unit.

In the embodiment of the utility model, a coating unit and a heating annealing unit are arranged in the chamber, and a protective film layer can be provided on the first film layer by using this device. The material of the protective film layer has a relatively high boiling point, so it is relatively The first film layer is stable, the first film layer can be protected, and the protective film layer can be annealed to ensure its compactness, and the second film is sputtered at a crystallization temperature higher than the boiling point of the material of the first film layer. When the film is formed, the protective film layer can prevent the material of the first film layer from evaporating out and contaminating the second film layer, thus ensuring the film-forming quality of the second film layer. In this solution, since the protective film layer of the first film layer and the coating and annealing of the second film layer can be integrated in the same equipment, the handling process can be reduced, the process is simplified, and the impact of other impurities on the second film layer is also reduced. Pollution further ensures the film quality.

During specific implementation, preferably, the heating annealing unit and the coating unit are located opposite to each other. In this embodiment, since the heating annealing unit and the coating unit are arranged opposite to each other, the substrate can be placed between the two during the sputter coating process, and the coating and annealing process can be completed without moving the substrate, avoiding The problem of inaccurate alignment.

During specific implementation, preferably, referring to Fig. 2 and Fig. 3: the heating and annealing unit 21 is positioned at the bottom of the chamber 22, and the coating unit 23 is positioned at the top of the chamber 22; or, the heating and annealing unit 21 is positioned at the top of the chamber 22, and the coating The unit 23 is located at the bottom of the chamber 22 .

Preferably, there are multiple specific structures of the heating annealing unit, one of which is as shown in Figure 4: the heating annealing unit includes an infrared radiation plate 211, a thermocouple sensor 212 arranged on the infrared radiation plate, and a cooling water pipe 213; The surface of the radiation plate has a plurality of air holes 214 . Wherein, the infrared radiant plate can be used for heating, the cooling water pipe can be used for cooling, the thermocouple sensor can be used for monitoring the temperature of the infrared radiant plate, and the air holes of the infrared radiant plate can pass through the airflow (the direction of the arrow shown in Figure 5 is the airflow direction), Accelerate heat conduction to ensure uniform temperature in the chamber.

Another heating and annealing unit structure is shown in Figure 5. The heating and annealing unit includes a heat conduction plate 215, an infrared heat lamp 216 arranged on the heat conduction plate, a thermocouple sensor 217 and a cooling water pipe 218; the surface of the heat conduction plate has a plurality of air holes 219. The infrared heat lamp can be used for heating, the cooling water pipe can be used for cooling, and the thermocouple sensor is used to monitor the temperature of the heat conduction plate. The heat conduction plate can be used to conduct heat and the pores of the heat conduction plate can pass airflow to accelerate heat conduction and ensure uniform temperature in the chamber.

If the heating and annealing unit is located at the bottom of the chamber, the air holes of the infrared radiation plate or the heat conduction plate are also used to lift the substrate through the airflow, so that the impact force on the substrate can be alleviated and damage can be reduced.

If the heating and annealing unit is located at the top of the chamber, a pair of substrate adsorption components 24 are provided on the side of the heating and annealing unit facing the coating unit. During sputter coating, the base substrate is adsorbed on the heating annealing unit in parallel. Specifically, a pair of substrate adsorption components may be provided on the side of the heat conduction plate or the infrared radiation plate facing the coating unit.

Preferably, the film coating device provided by the embodiment of the present invention further includes an infrared temperature sensor 25 for monitoring the temperature of the substrate. In this way, the temperature of the substrate can be monitored in real time through non-contact to ensure the accuracy of the film forming temperature and film forming quality.

Preferably, as shown in FIG. 2 , if the coating unit is located at the bottom of the chamber, the coating unit has a stepping linear motion motor 26 and a magnetic levitation track 27 . The coating unit can move through the magnetic levitation track under the control of the stepping linear motion motor to form a uniform film on the substrate.

In addition, the installation positions of the base substrate 28 and the target source 29 are shown in FIG. 2 and FIG. 3 .

Preferably, the film coating device in the embodiment of the present invention may be, but not limited to, a magnetron sputtering film coating device. The principle of the magnetron sputtering film coating of the coating unit is briefly described below: there is a magnetic field parallel to the surface of the target source 29 and an electric field perpendicular to the surface of the target source 29 in the coating unit, and there is still an electric field in the vacuum chamber. A small amount of neutral atoms and electrons, under the action of the electric field, the electrons will move towards the direction of the substrate 28, and will hit the Ar gas during the movement, and the electrons hitting the Ar gas will ionize the Ar gas, generating Ar+ ions and a new The electrons are referred to as secondary electrons, and Ar+ ions are positively charged, and under the action of an electric field, they accelerate towards the target source 29 and move towards the target source 29, and the target source 29 atoms that overflow are neutral, and the target source 29 atoms that overflow are directed towards the lining The base substrate 28 is moved in the direction to deposit crystals to form a thin film. In the process of sputtering ITO, it is also necessary to feed oxygen into the chamber so that it can be supplemented during crystallization.

Obviously, those skilled in the art can make various changes and modifications to the utility model without departing from the spirit and scope of the utility model. In this way, if these modifications and variations of the utility model fall within the scope of the claims of the utility model and equivalent technologies thereof, the utility model is also intended to include these modifications and variations.

Claims (12)

1. A display substrate, characterized in that it comprises a base substrate, a first film layer, a protective film layer and a second film layer stacked in sequence on the base substrate; wherein, the crystallization temperature of the protective film layer is lower than The boiling point of the material of the first film layer; the crystallization temperature of the second film layer is higher than the boiling point of the material of the first film layer; The boiling point of the material of the second film layer is higher than that of the material of the first film layer, and the boiling point of the material of the protective film layer is not lower than the boiling point of the material of the second film layer. 2 . The display substrate according to claim 1 , wherein the first film layer is a color resist layer; the second film layer is a transparent electrode layer; and the material of the protective film layer is a transparent conductive material. 3. The display substrate according to claim 2, wherein the material of the protective film layer is graphene, transparent metal or transparent metal oxide. 4. The display substrate according to claim 2, wherein the material of the protective film layer is the same as that of the second film layer. 5. The display substrate according to claim 4, wherein the material of the color resist layer is benzophenone imine; the material of the transparent electrode layer is indium tin oxide ITO; The material is ITO. 6. The display substrate according to claim 5, wherein the crystallization temperature of the protective film layer ranges from 100 degrees Celsius to 150 degrees Celsius; the crystallization temperature of the second film layer ranges from 200 degrees Celsius to 250 degrees Celsius . 7 . The display substrate according to claim 6 , wherein the crystallization temperature of the protective film layer is 130 degrees Celsius; the crystallization temperature of the second film layer is 230 degrees Celsius. 8 . The display substrate according to claim 7 , wherein a ratio of the film thickness of the protective film layer to the film thickness of the second film layer ranges from 1:9 to 1:1. 9. A display panel, comprising the display substrate according to any one of claims 1-8. 10. A coating device, comprising a chamber; It is characterized in that, the chamber is provided with: It is used to perform the first sputtering with the material of the second film layer on the base substrate formed with the first film layer to form a protective film layer, and use the second film layer on the base substrate formed with the protective film layer The material of the second film layer is sputtered for the second time to form the coating unit of the second film layer; wherein, the crystallization temperature of the protective film layer is lower than the boiling point of the material of the first film layer; the second film layer The crystallization temperature of the layer is higher than the boiling point of the material of the first film layer; the boiling point of the material of the second film layer is higher than the boiling point of the material of the first film layer; It is used to control the crystallization temperature of the protective film layer and the second film layer, and before the second sputtering is performed with the material of the second film layer on the base substrate formed with the protective film layer, the protective film layer The heating annealing unit for annealing the film layer. 11. The coating device according to claim 10, wherein the heating annealing unit is located at the bottom of the chamber, and the coating unit is located at the top of the chamber; Alternatively, the heating and annealing unit is located at the top of the chamber, and the coating unit is located at the bottom of the chamber. 12. The coating device according to claim 10 or 11, characterized in that the coating device is a magnetron sputtering coating device.