KR20130029344A - 레지스트 조성물, 레지스트 패턴 형성 방법 - Google Patents

레지스트 조성물, 레지스트 패턴 형성 방법 Download PDF

Info

Publication number
KR20130029344A
KR20130029344A KR1020120101121A KR20120101121A KR20130029344A KR 20130029344 A KR20130029344 A KR 20130029344A KR 1020120101121 A KR1020120101121 A KR 1020120101121A KR 20120101121 A KR20120101121 A KR 20120101121A KR 20130029344 A KR20130029344 A KR 20130029344A
Authority
KR
South Korea
Prior art keywords
group
preferable
atom
structural unit
alkyl group
Prior art date
Application number
KR1020120101121A
Other languages
English (en)
Korean (ko)
Inventor
겐스케 마츠자와
준 이와시타
Original Assignee
도쿄 오카 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄 오카 고교 가부시키가이샤 filed Critical 도쿄 오카 고교 가부시키가이샤
Publication of KR20130029344A publication Critical patent/KR20130029344A/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/38—Esters containing sulfur
    • C08F220/385—Esters containing sulfur and containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020120101121A 2011-09-13 2012-09-12 레지스트 조성물, 레지스트 패턴 형성 방법 KR20130029344A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-199671 2011-09-13
JP2011199671A JP5779456B2 (ja) 2011-09-13 2011-09-13 レジスト組成物、レジストパターン形成方法

Publications (1)

Publication Number Publication Date
KR20130029344A true KR20130029344A (ko) 2013-03-22

Family

ID=48179322

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120101121A KR20130029344A (ko) 2011-09-13 2012-09-12 레지스트 조성물, 레지스트 패턴 형성 방법

Country Status (3)

Country Link
JP (1) JP5779456B2 (zh)
KR (1) KR20130029344A (zh)
TW (1) TWI623815B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220092924A (ko) * 2019-12-03 2022-07-04 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물 및 레지스트 패턴 형성 방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013075963A (ja) * 2011-09-29 2013-04-25 Jsr Corp 化合物、重合体及びフォトレジスト組成物
JP6006928B2 (ja) * 2011-11-02 2016-10-12 東京応化工業株式会社 高分子化合物の製造方法
TWI619733B (zh) * 2012-09-15 2018-04-01 Rohm And Haas Electronic Materials Llc 包含多種酸產生劑化合物之光阻劑
JP7341788B2 (ja) * 2018-08-27 2023-09-11 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003122010A (ja) * 2001-10-16 2003-04-25 Fuji Photo Film Co Ltd ポジ型レジスト組成物
US7063931B2 (en) * 2004-01-08 2006-06-20 International Business Machines Corporation Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use
JP5597460B2 (ja) * 2010-01-05 2014-10-01 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物
JP5518671B2 (ja) * 2010-10-22 2014-06-11 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220092924A (ko) * 2019-12-03 2022-07-04 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물 및 레지스트 패턴 형성 방법

Also Published As

Publication number Publication date
TW201329637A (zh) 2013-07-16
JP2013061477A (ja) 2013-04-04
JP5779456B2 (ja) 2015-09-16
TWI623815B (zh) 2018-05-11

Similar Documents

Publication Publication Date Title
JP5518671B2 (ja) レジスト組成物、レジストパターン形成方法、高分子化合物
KR101739150B1 (ko) 레지스트 조성물, 레지스트 패턴 형성 방법 및 고분자 화합물
JP5764480B2 (ja) レジスト組成物、レジストパターン形成方法及び高分子化合物
KR20110081047A (ko) 포지티브형 레지스트 조성물, 레지스트 패턴 형성 방법
KR20130031212A (ko) 레지스트 조성물, 레지스트 패턴 형성 방법
KR20130020757A (ko) 중합체, 레지스트 조성물 및 레지스트 패턴 형성 방법
JP2013097272A (ja) レジスト組成物およびレジストパターン形成方法
JP5802394B2 (ja) レジスト組成物、レジストパターン形成方法及び高分子化合物
JP5743835B2 (ja) レジスト組成物及びレジストパターン形成方法
JP5779456B2 (ja) レジスト組成物、レジストパターン形成方法
KR101780827B1 (ko) 레지스트 조성물 및 레지스트 패턴 형성 방법
KR101884497B1 (ko) 화합물, 라디칼 중합 개시제, 화합물의 제조 방법, 중합체, 레지스트 조성물, 레지스트 패턴 형성 방법
JP2010256419A (ja) ポジ型レジスト組成物、ポジ型レジストパターン形成方法
JP2013040296A (ja) 重合体、レジスト組成物及びレジストパターン形成方法
JP5752471B2 (ja) レジスト組成物、レジストパターン形成方法、高分子化合物
JP5469917B2 (ja) ポジ型レジスト組成物、レジストパターン形成方法および高分子化合物
KR20130001138A (ko) 레지스트 조성물 및 레지스트 패턴 형성 방법
JP2013101222A (ja) Ｅｕｖ用またはｅｂ用レジスト組成物およびレジストパターン形成方法
KR101856236B1 (ko) 레지스트 조성물, 레지스트 패턴 형성 방법, 및 고분자 화합물
JP2013160814A (ja) レジスト組成物およびパターン形成方法
JP2013023594A (ja) 重合体、レジスト組成物及びレジストパターン形成方法
JP5743593B2 (ja) レジスト組成物、レジストパターン形成方法および高分子化合物
JP5897896B2 (ja) レジスト組成物及びレジストパターン形成方法
JP2012088448A (ja) ポジ型レジスト組成物、レジストパターン形成方法
KR20130095219A (ko) 레지스트 조성물 및 레지스트 패턴 형성 방법

Legal Events

Date Code Title Description
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment