KR20130026193A - Gas injection apparatus and thin film deposition apparatus having the same - Google Patents

Gas injection apparatus and thin film deposition apparatus having the same Download PDF

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Publication number
KR20130026193A
KR20130026193A KR1020110089671A KR20110089671A KR20130026193A KR 20130026193 A KR20130026193 A KR 20130026193A KR 1020110089671 A KR1020110089671 A KR 1020110089671A KR 20110089671 A KR20110089671 A KR 20110089671A KR 20130026193 A KR20130026193 A KR 20130026193A
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KR
South Korea
Prior art keywords
injection
gas
unit
raw material
gas injection
Prior art date
Application number
KR1020110089671A
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Korean (ko)
Inventor
윤석원
임혁
김영은
Original Assignee
주성엔지니어링(주)
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Priority to KR1020110089671A priority Critical patent/KR20130026193A/en
Publication of KR20130026193A publication Critical patent/KR20130026193A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: A gas spray device and a thin film depositing device including the same are provided to prevent a spray nozzle from being closed by spraying raw material gas through a spray unit combined with a spray hole without spraying the raw material gas through the spray hole. CONSTITUTION: A deposition chamber(100) includes a bottom chamber(110) with a reaction space and a chamber lead(120) to cover the bottom chamber. A raw material supply unit(200) provides deposition material powder and includes a raw material storage unit(210), a carrier gas supply unit(220), and a raw material supply unit(230). A gas spray unit(300) evaporates the deposition material powder and sprays the evaporated result to a substrate(101) received in the deposition chamber. The gas spray unit includes a body(310), a heating unit(320), a plurality of spray holes(330), and a spray unit formed in the plurality of spray holes. [Reference numerals] (210) Raw material storage unit; (220) Carrier gas supply unit; (230) Raw material supply unit

Description

Gas injection apparatus and thin film deposition apparatus having the same {Gas injection apparatus and thin film deposition apparatus having the same}

The present invention relates to a gas injection apparatus, and more particularly, to a gas injection apparatus capable of preventing clogging of a nozzle and a thin film deposition apparatus having the same.

Generally, semiconductor memory devices, organic light emitting devices, and solar cells are manufactured using a semiconductor process. That is, a plurality of thin films are deposited and etched in a desired pattern to fabricate a device having predetermined characteristics. For example, in the thin film deposition process, the substrate is placed inside the chamber, heated to a predetermined temperature, and a process gas is injected to the substrate, whereby the process gas is decomposed by the heat of the substrate to form a thin film on the substrate.

At this time, an injection apparatus is used to uniformly inject the process gas onto the entire surface of the substrate. That is, an injection apparatus such as a gas injection plate or a shower head having a plurality of injection holes is provided at a position facing the substrate, for example, the upper side of the chamber, and the process gas provided from the outside of the chamber through the gas supply pipe is used to It is sprayed uniformly in the reaction space. On the other hand, the injection device for forming the organic thin film is provided with a heating means for vaporizing the organic raw material in powder form therein. An example of such an injection device is presented in Korean Patent Publication No. 2009-73359.

However, such an injection device is located inside the chamber, causing a lot of problems, one of which is clogging of the injection hole. This occurs because the temperature inside the injection device is higher than the temperature outside the injection device, ie the reaction chamber. That is, the inside of the injection apparatus maintains a high temperature in order to vaporize the raw material in the form of powder, and when the high temperature raw material gas is discharged to a lower temperature outside, particles are generated by the temperature difference, which causes clogging in the injection hole.

The present invention provides a gas injection apparatus and a thin film deposition apparatus having the same, which can prevent clogging of the injection nozzle.

The present invention provides a gas injection apparatus capable of preventing clogging of an injection nozzle using a gas injection speed, a replaceable injection plate, and the like, and a thin film deposition apparatus having the same.

Gas injection device according to an aspect of the present invention includes a body provided with a space therein; A plurality of injection holes formed on one surface of the body; And a plurality of spraying units provided in the plurality of spraying holes, respectively.

It further comprises a heating means provided in the body.

The plurality of injection units are provided with at least one of different diameters and lengths.

The plurality of injection units are provided with a length or a narrow diameter toward the edge from the center of one surface of the body.

The plurality of injection holes narrow in diameter from the center to the edge.

The plurality of injection units are densely arranged toward the edges from the center of one surface of the body.

The injection unit includes a protrusion provided to be narrow inward.

The plurality of injection units have one side open and the other side closed, and a plurality of holes are formed on the side.

The plurality of injection units are provided on a predetermined plate, and the plate is fastened to one surface of the body.

Gas injection device according to another aspect of the present invention includes a body provided with a space therein; A plurality of injection holes formed on one surface of the body; And an injection plate corresponding to each of the plurality of injection holes, a plurality of holes being formed and detachably coupled to one surface of the body.

The plurality of holes are formed to have a diameter smaller than that of the injection holes.

According to still another aspect of the present invention, there is provided a gas injection apparatus comprising: a deposition chamber in which a substrate is placed; A raw material supply unit for providing deposition raw materials in powder form; And a gas injector for vaporizing the deposition material in the form of powder and injecting the substrate in the deposition chamber, wherein the gas injector is provided in a plurality of ejection holes formed on one surface of a body having a space therein and is separable. And a plurality of injection units.

It further includes a rotation drive for rotating the gas injection unit.

Embodiments of the present invention is provided with a gas injection device including a plurality of injection units are detachably coupled in a plurality of injection holes formed in the lower body. The plurality of injection units may be provided to have a longer length or a narrower diameter from the central portion of the lower portion of the body to the edge, or the upper side may be opened and the lower side may be closed to form a hole in the side.

Therefore, the raw material gas is not injected through the injection hole but the raw material gas is injected through the injection unit fastened in the injection hole, so that clogging of the injection hole does not occur. In addition, since the injection unit is detachable, it is possible to reduce costs by separating and cleaning every predetermined cycle and reusing or replacing it with another injection unit.

1 is a schematic view of a thin film deposition apparatus having a gas injection apparatus according to an embodiment of the present invention.
2 to 5 are schematic views of a gas injection apparatus according to embodiments of the present invention.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention in more detail. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you. Wherein like reference numerals refer to like elements throughout.

1 is a cross-sectional view of a thin film deposition apparatus having a gas injection apparatus according to an embodiment of the present invention, Figure 2 is a cross-sectional view of the gas injection apparatus according to a first embodiment of the present invention.

1 and 2, a thin film deposition apparatus according to an embodiment of the present invention includes a deposition chamber 100 in which a substrate 101 is placed, a raw material supply unit 200 for providing a deposition material in a powder form, and It includes a gas injection unit 300 for vaporizing the deposition material in the form of a powder to be sprayed on the substrate 101 of the deposition chamber 100. In addition, the gas injection unit 300 further includes a rotation driver 400 for providing a deposition material and rotating the gas injection unit 300.

The deposition chamber 100 includes a lower chamber 110 having a reaction space and a chamber lid 120 covering the lower chamber 110. The lower chamber 110 is manufactured in a cylindrical shape with an open top, and the chamber lid 120 is manufactured in a plate shape covering an open upper region of the lower chamber 110. In addition, the substrate placing means 110 is located in the reaction space of the deposition chamber 100, that is, the bottom surface. However, the present invention is not limited thereto, and the substrate placing means 110 may be located at the side of the lower chamber 110 or may be located at the chamber lid 120. Here, the position of the gas injector 300 may be changed according to the position of the substrate mounting means 110. This is because the gas injection unit 300 is located in the region facing the substrate 101. In addition, although not shown, the deposition chamber 100 includes a substrate entrance through which the substrate 101 enters and exits. And, it may be further provided with a pressure adjusting unit for maintaining the pressure of the deposition chamber 100. In addition, a driving member for elevating or rotating the substrate mounting means 120 may be further provided.

The raw material supply unit 200 uses a raw material storage means 210 in which the deposited raw material in powder form is stored, a carrier gas supply means 220 for supplying a carrier gas, and a predetermined amount of powdered deposition raw material using a carrier gas. The raw material supply means 230 which supplies to the sand | seat part 300 is provided. Here, the raw material storage means 210 stores the organic raw material and the impurity raw material in powder form, respectively. Therefore, the raw material supply unit 200 may supply the organic raw material alone or may supply the organic raw material containing impurities. The raw material supply means 230 and the raw material storage means 210, and the raw material supply means 230 and the carrier gas supply means 220 are connected through pipes. The pipes also have a plurality of valves for opening and closing them. In addition, the raw material supply means 230 is also connected to the gas injection unit 300 through a pipe. In addition, a part of the pipe is provided with a separate valve for opening and closing the pipe. At this time, the raw material supply means 230 may provide a certain amount of deposition raw material by using a carrier gas directly, by using a pressure difference by the gas, or by using the characteristics of the structure.

The rotation drive unit 400 extends inwardly from the outside of the deposition chamber 100 and communicates with the raw material supply unit 200 to receive the deposition material in the form of powder, and protrudes out of the deposition chamber 100. And a housing 420 surrounding the central axis 410 and a sealing member 430 sealing between the housing 420 and the central axis 410. In addition, although not shown, a rotation member (eg, a motor) for rotating the central axis 410 is further provided. Here, it is effective to use the magnet seal as the sealing member 430. In addition, the deposition raw material of the raw material supplier 200 may be provided through the housing 420.

The gas injection unit 300 includes a body 310 having an internal space, a heating means 320 for heating the internal space of the body 310, a plurality of injection holes 330 provided under the body 310, and And a spray unit 340 provided in the plurality of spray holes 330. Therefore, the gas injection unit 300 receives the raw material in the form of powder, and heats and vaporizes it through the heating means 320, and then the substrate placing unit through the injection unit 340 provided in the plurality of injection holes 323. It sprays on the board | substrate 101 of (110).

The body 310 is manufactured in the shape of a tube (ie, a pipe or a rod) having a predetermined space therein. For example, the body 310 may have a rectangular upper plate and lower plate each having a predetermined thickness and a predetermined width and length, and four side plates may be provided between the upper plate and the lower plate to have a rectangular parallelepiped shape. At this time, the upper plate and the lower plate may be provided with the same thickness, it may be provided with a different thickness, for example, the lower plate may be provided thicker. The body 310 has a through hole formed in the upper plate is connected to the central axis 410 is supplied with the raw material through the central axis (410). In addition, the body 310 is provided with a plurality of injection holes 330 in the lower plate. That is, a hole having a predetermined diameter is formed in the lower plate of the body 310 to provide the injection hole 330. On the other hand, the body 310 is rotated by the central axis (410). Accordingly, the source gas vaporized in the gas injection unit 300 may be uniformly supplied to the entire substrate 101 to deposit an organic thin film having a uniform thickness on the entire substrate 101.

The heating means 320 is provided for vaporizing the raw material in powder form. The heating means 320 includes a heat generating member provided inside the body 310 and an energy supply unit for supplying energy to the heat generating member. A coil may be used as the heat generating member, and a power supply for supplying electrical energy may be used as the energy supply unit. Of course, the present invention is not limited thereto, and various heating means 320 may be used. The heating means 320 may be provided with a heat generating member inside the body 310, for example, may be provided between the upper plate and the lower plate inside the body 310. Therefore, the body 310 may be divided into an upper vaporization region and a lower injection region by the heating means 320. In addition, the heat generating member may be provided in the upper plate and the side plate having a plate shape. In addition, the lower plate may be provided with a heat generating member. Thus, the raw material in powder form may be vaporized just before being sprayed onto the substrate 101.

The injection unit 340 is provided in the plurality of injection holes 330. The injection unit 340 may be provided to be coupled to and separated from the injection hole 330. The injection unit 340 may be inserted into the injection hole 330 individually, or may be provided by combining the plate formed with a plurality of injection unit 340 to the lower portion of the body 310. Since the injection unit 340 is detachably provided, the blockage of the injection hole 330 may be prevented by separating the injection unit 340 every predetermined period to wash or replace the injection unit 340. On the other hand, the injection unit 340 may be a venturi type having a protrusion 342 formed at a predetermined width therein from the side. Therefore, the source gas may be injected through the protrusion 342 of the injection unit 340 at a high flow rate, thereby preventing the blockage of the injection unit 340. That is, since the source gas is injected at a high speed, the time for staying in the injection unit 340 is shortened, so that particles that are stuck in the injection unit 340 are not generated. Here, the protrusion 342 is preferably formed so as not to form a right angle with the side surface of the injection unit 340. That is, the protrusion 342 may be formed to have a width that gradually increases from the upper side of the side to a predetermined region. This is because when the protrusion 342 is perpendicular to the side of the injection unit 340, vortex may be generated between the side of the injection unit 340 and the protrusion 342, and particles may be deposited therein.

As described above, the gas injection device according to the first embodiment of the present invention is provided to be capable of separating the injection unit 340 having the protrusion 342 formed therein to narrow the width of the injection hole 330 in the injection hole 330. As a result, clogging of the injection hole 330 may be prevented at the source. In addition, the protrusion 342 may be formed in the injection unit 340 to prevent the injection unit 340 from being blocked by improving the injection speed of the source gas.

On the other hand, the present invention is not limited to the first embodiment described above can be various modifications that can prevent the clogging of the injection hole 330, this various embodiments will be described as follows.

3 is a cross-sectional view of the gas injection apparatus according to the second embodiment of the present invention.

Referring to FIG. 3, the gas injection apparatus according to the second embodiment of the present invention includes a body 310 having a predetermined internal space, a heating means 320 for heating the internal space of the body 310, and a body ( It includes a plurality of injection holes 330 provided in the lower portion of the 310, and a plurality of injection units 340 inserted into the injection hole 330 and having a different length and diameter. That is, when the injection unit 340 is blocked by inserting the injection unit 340 into the injection hole 330, the injection unit 340 is separated and washed or replaced with another injection unit 340 to block the injection hole 330. Can be prevented at the source.

By the way, the injection unit 340 may have a different diameter or length, for example, it may be formed longer toward the edge from the center portion or may be formed of a smaller diameter. That is, the injection unit 340 may be formed with the same diameter and formed longer toward the edge, may be formed with the same length and smaller diameter toward the edge, may be formed with a smaller diameter and longer length toward the edge have. At this time, when the injection unit 340 is formed of a different diameter, accordingly the injection hole 330 is also formed with a different diameter. In this way, the injection unit 340 formed at the edge of the gas injection unit 300 may be formed longer or narrower than the injection unit 340 formed at the center, thereby improving the straightness of the source gas injected toward the edge of the substrate 101. . On the other hand, if the length and diameter of the injection unit 340 is different depending on the position corresponding to the substrate 101, the amount of source gas that reaches the substrate 101 through each injection unit 340 for each injection unit 340 can be different. That is, when the length of the injection unit 340 is lengthened or the diameter is decreased toward the edge from the center of the gas injection unit 300, the amount of the source gas passing through the injection unit 340 closer to the edge becomes smaller. Therefore, the amount of source gas injected through the injection unit 340 at the edge may be increased by reducing the distance between the injection units 340 toward the edge from the center of the gas injection unit 300 to the edge. On the other hand, the injection unit 340 may be inserted into the injection hole 330 individually, may be provided by combining the plate formed with a plurality of injection unit 340 to the lower body 310.

4 is a cross-sectional view of a gas injection apparatus according to a third embodiment of the present invention.

Referring to FIG. 4, the gas injection apparatus according to the third embodiment of the present invention includes a body 310 having a predetermined internal space, a heating means 320 for heating the internal space of the body 310, and a body ( And a plurality of injection holes 330 provided below the 310, and a plurality of injection units 340 inserted into the injection holes 330. 344 is provided in a formed shape.

That is, the injection unit 340 has an upper portion connected to the inner space of the body 310 is opened, the lower portion facing the substrate 101 side is sealed, and a plurality of holes 344 are formed on the side surface. Therefore, the source gas is injected through the hole 344 on the side surface, and particles that may be included in the source gas are accumulated on the closed lower surface. Therefore, by separating the spray unit 340 at predetermined intervals, removing particles accumulated in the lower side inside, and inserting the spray unit 330 into the spray hole 330, a plurality of times of use are possible. On the other hand, the injection unit 340 may be inserted into the injection hole 330 individually, may be provided by combining the plate formed with a plurality of injection unit 340 to the lower body 310.

5 is a cross-sectional view of a gas injection apparatus according to a fourth embodiment of the present invention.

Referring to FIG. 5, the gas injection device according to the fourth embodiment of the present invention includes a body 310 having a predetermined internal space, a heating means 320 for heating the internal space of the body 310, and a body ( A plurality of injection holes 330 provided below the 310 and a plurality of holes 352 are formed in a region corresponding to the injection hole 330 and includes a plate 354 provided to cover the lower plate of the body 310 It includes an injection member 350.

The jet plate 350 is manufactured in a plate shape in which a plurality of holes 352 are formed. At this time, the plate 354 has a portion in which at least one region extends upward from the outside thereof, and the portion of the plate 354 is coupled to the outside of the side plate of the body 310, so that the injection plate 350 is fastened to the body 310. The plurality of holes 352 formed in the injection plate 350 may be formed along the size and arrangement of the injection holes 330. That is, since the holes 352 are provided to correspond to each injection hole 330, the source gas may be injected through the holes 352. In this case, the hole 352 may be formed with a diameter smaller than or equal to the diameter of the injection hole 330. Since the jet plate 350 is manufactured to be detachable and coupled, the jet plate 350 may be separated and washed or replaced at predetermined intervals, and then fastened to the body 310 to prevent blockage of the jet hole 330. In addition, the injection plate 350 may provide a heating means in the plate 354 in which the hole 352 is not formed, or may form a groove for particle capture in one region of the plate 354.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.

100: reaction chamber 200: raw material supply unit
300: gas injection unit 400: rotation drive unit
310: body 320: heating means
330: injection hole 340: injection unit

Claims (13)

A body having a space provided therein;
A plurality of injection holes formed on one surface of the body; And
Gas injection device provided in each of the plurality of injection holes, comprising a plurality of detachable injection unit.
The gas injection device according to claim 1, further comprising heating means provided in the body.
The gas injection device according to claim 1 or 2, wherein the plurality of injection units are provided with at least one of different diameters and lengths.
The gas injection device of claim 3, wherein the plurality of injection units are provided with a length or a narrow diameter toward the edge from the central portion of the one surface of the body.
The gas injection device of claim 4, wherein the plurality of injection holes become smaller in diameter from the center to the edge.
The gas injection device of claim 4, wherein the plurality of injection units are arranged densely from the center of one surface of the body toward the edge.
The gas injection device according to claim 1 or 2, wherein the injection unit includes a protrusion provided to be narrow in width.
The gas injection device of claim 1, wherein the plurality of injection units have one side open and the other side closed, and a plurality of holes formed on the side.
The gas injection device according to claim 1 or 2, wherein the plurality of injection units are provided on a predetermined plate, and the plate is fastened to one surface of the body.
A body having a space provided therein;
A plurality of injection holes formed on one surface of the body; And
And a plurality of holes formed in correspondence with each of the plurality of injection holes, the injection plate being detachably coupled to one surface of the body.
The gas injection device of claim 10, wherein the plurality of holes have a diameter smaller than that of the injection holes.
A deposition chamber in which the substrate is placed;
A raw material supply unit for providing deposition raw materials in powder form; And
A gas injector for vaporizing the deposition material in the form of powder and injecting the substrate into the deposition chamber;
The gas injection unit includes a plurality of injection units are provided in each of the plurality of injection holes formed on one surface of the body is provided with a space therein and a plurality of detachable injection unit. The thin film deposition apparatus of claim 12, further comprising a rotation driver configured to rotate the gas injection unit.
KR1020110089671A 2011-09-05 2011-09-05 Gas injection apparatus and thin film deposition apparatus having the same KR20130026193A (en)

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KR1020110089671A KR20130026193A (en) 2011-09-05 2011-09-05 Gas injection apparatus and thin film deposition apparatus having the same

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210129232A (en) * 2019-03-15 2021-10-27 램 리써치 코포레이션 Friction stir welding in semiconductor fabrication applications

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210129232A (en) * 2019-03-15 2021-10-27 램 리써치 코포레이션 Friction stir welding in semiconductor fabrication applications

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