KR20130011168A - Light emitting device, method for fabricating the same, and light emitting device package - Google Patents

Abstract

PURPOSE: A light emitting device, a manufacturing method thereof, and a light emitting device package are provided to improve the crystallization of a nitride semiconductor layer by alternatively forming a first semiconductor layer and a second semiconductor layer with a different indium composition ratio in a nitride semiconductor layer. CONSTITUTION: A first conductive semiconductor layer(117) is formed on a substrate(111). An active layer(119) is formed on the first conductive semiconductor layer. A second conductive clad layer(121) is formed on the active layer. A nitride semiconductor layer(123) is formed on the second conductive clad layer. A second conductive semiconductor layer(125) is formed on the nitride semiconductor layer.

Description

LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE SAME, AND LIGHT EMITTING DEVICE PACKAGE}

Embodiments relate to a light emitting device, a light emitting device manufacturing method, and a light emitting device package.

A light emitting diode (LED) is a light emitting element that converts current into light. Recently, light emitting diodes have been increasingly used as a light source for displays, a light source for automobiles, and a light source for illumination because the luminance gradually increases.

In recent years, high output light emitting chips capable of realizing full color by generating short wavelength light such as blue or green have been developed. By applying a phosphor that absorbs a part of the light output from the light emitting chip and outputs a wavelength different from the wavelength of the light, the light emitting diodes of various colors can be combined and a light emitting diode emitting white light can be realized Do.

The embodiment provides a light emitting device, a light emitting device manufacturing method, and a light emitting device package including a plurality of InAlGaN layers between an active layer and a second conductive semiconductor layer.

The embodiment provides a light emitting device, a light emitting device manufacturing method, and a light emitting device package in which a plurality of indium-based semiconductor layers having different indium concentrations are disposed between an active layer and a second conductive semiconductor layer.

The light emitting device according to the embodiment includes a first conductive semiconductor layer; A second conductive semiconductor layer on the first conductive semiconductor layer; An electrode on the second conductive semiconductor layer; An active layer on the first conductive semiconductor layer and the second conductive semiconductor layer; A nitride semiconductor layer disposed between the active layer and the second conductive semiconductor layer, wherein the nitride semiconductor layer includes a plurality of first semiconductor layers and a second semiconductor layer that are alternately disposed; the semiconductor layer a second semiconductor layer has a composition formula, of the plurality of _{in x Al y Ga 1 -x- y} N (0 <x≤0.1, 0.15≤y≤0.19, 0 <x + y <1) is the first An InAlGaN layer having an indium composition ratio different from the indium (In) composition ratio of one semiconductor layer is included.

A light emitting device package according to an embodiment includes a body having the light emitting device and the cavity; A plurality of lead electrodes disposed in the cavity and connected to the light emitting elements; And a molding member in the cavity.

In one embodiment, a method of manufacturing a light emitting device includes: forming a first conductive semiconductor layer on a substrate; Forming an active layer on the first conductive semiconductor layer; Forming a nitride semiconductor layer having a second conductivity type dopant on the active layer; And forming a second conductive type semiconductor layer on the nitride semiconductor layer, wherein the forming of the nitride semiconductor _{layer, In x Al y Ga 1 -x-} y N (0 <x≤0.1, 0 < A plurality of first semiconductor layers having a composition formula of y≤0.19, 0 <x + y <1) and In _a Al _b Ga _{1 -a- b} N (0 <a <0.1, 0.15 <b <1, 0 <a A plurality of second semiconductor layers having a compositional formula of + b <1) are alternately formed, and the first semiconductor layer includes an indium composition ratio different from the indium composition ratio of the second semiconductor layer.

The embodiment can improve the crystallinity of the second conductive semiconductor layer disposed between the active layer and the electrode.

The embodiment can improve the internal quantum efficiency by improving the current injection efficiency.

1 is a cross-sectional view of a light emitting device according to an embodiment.
FIG. 2 is a view illustrating a light emitting device having a horizontal electrode structure using the light emitting device of FIG. 1.
3 and 4 are views illustrating a light emitting device having a vertical electrode structure using the light emitting device of FIG. 1 and a manufacturing process thereof.
5 is a view showing a light emitting device package according to an embodiment.
6 is a diagram illustrating a display device according to an exemplary embodiment.
7 is a diagram illustrating another example of a display device according to an exemplary embodiment.
8 is a view showing a lighting apparatus according to an embodiment.

Hereinafter, a light emitting device according to an embodiment and a method of manufacturing the same will be described in detail with reference to the accompanying drawings. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be formed "on" or "under" a substrate, each layer The terms " on "and " under " include both being formed" directly "or" indirectly " Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings. The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

1 is a cross-sectional view of a light emitting device according to an embodiment.

Referring to FIG. 1, the light emitting device 100 includes a substrate 111, a buffer layer 113, a low conductive layer 115, a first conductive semiconductor layer 117, an active layer 119, and a second conductive cladding layer. (121), the nitride semiconductor layer 123 and the second conductive semiconductor layer 125.

The substrate 111 may be a light transmissive, insulating or conductive substrate, for example, sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga ₂ O ₃ , At least one of LiGaO ₃ may be used. A plurality of protrusions 112 may be formed on an upper surface of the substrate 111, and the plurality of protrusions 112 may be formed through etching of the substrate 111 or may have a light extraction structure such as a separate roughness. It can be formed as. The protrusion 112 may include a stripe shape, a hemispherical shape, or a dome shape. The thickness of the substrate 111 may be formed in the range of 30㎛ ~ 150㎛, but is not limited thereto.

A plurality of compound semiconductor layers may be grown on the substrate 111, and the growth equipment of the plurality of compound semiconductor layers may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), or plasma laser deposition (PLD). It can be formed by a dual-type thermal evaporator sputtering, metal organic chemical vapor deposition (MOCVD), and the like, but is not limited to such equipment.

A buffer layer 113 is formed on the substrate 111, and the buffer layer 113 may be formed of at least one layer using group 2 to group 6 compound semiconductors. The buffer layer 113 comprises a semiconductor layer using a group III -V compound semiconductor, for _{example, In x Al y Ga 1 -x-} y N (0≤x≤1, 0≤y≤1, 0≤x A semiconductor having a compositional formula of + y ≦ 1) includes at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, and the like. The buffer layer 113 may be formed in a super lattice structure by alternately arranging different semiconductor layers.

The buffer layer 113 may be formed to alleviate the difference in lattice constant between the substrate 111 and the nitride-based semiconductor layer, and may be defined as a defect control layer. The buffer layer 113 may have a value between lattice constants between the substrate 111 and the nitride-based semiconductor layer. The buffer layer 113 may be formed of an oxide such as a ZnO layer, but is not limited thereto. The buffer layer 113 may be formed in the range of 30 to 500 nm, but is not limited thereto.

A low conductive layer 115 is formed on the buffer layer 113, and the low conductive layer 115 is an undoped semiconductor layer and has a lower conductivity than that of the first conductive semiconductor layer 117. The low conductive layer 115 may be implemented as a GaN-based semiconductor using a group III-V compound semiconductor, and the undoped semiconductor layer may have a first conductivity type even without intentionally doping a conductive dopant. The undoped semiconductor layer may not be formed, but is not limited thereto.

The first conductive semiconductor layer 117 may be formed on the low conductive layer 115. The first conductive semiconductor layer 117 is formed of a Group III-V compound semiconductor doped with a first conductive dopant, and is, for example, In _x Al _y Ga _{1- x- y} N (0 _{≦ x ≦} 1, 0 Y? 1, 0? X + y? 1). When the first conductive semiconductor layer 117 is an N-type semiconductor layer, the dopant of the first conductive type is an N-type dopant and includes Si, Ge, Sn, Se, and Te.

At least one of the low conductive layer 115 and the first conductive semiconductor layer 117 may have a superlattice structure in which different first and second layers are alternately arranged, and the first layer And the thickness of the second layer may be formed to a number A or more.

A first conductive clad layer (not shown) may be formed between the first conductive semiconductor layer 117 and the active layer 119. The first conductive clad layer may be formed of a GaN-based semiconductor, and the band gap may be formed to be greater than or equal to the band gap of the barrier layer of the active layer 119. The first conductive clad layer serves to constrain the carrier.

An active layer 119 is formed on the first conductive semiconductor layer 117. The active layer 119 may be formed of at least one of a single quantum well, a multiple quantum well (MQW), a quantum line, and a quantum dot structure. In the active layer 119, a well layer / barrier layer is alternately disposed, and the period of the well layer / barrier layer is 2 using a stacked structure of, for example, InGaN / GaN, AlGaN / GaN, InGaN / AlGaN, InGaN / InGaN. It may be formed in ~ 30 cycles.

The second conductive cladding layer 121 is formed on the active layer 119, and the second conductive cladding layer 121 has a higher band gap than the band gap of the barrier layer of the active layer 119. A group-V compound semiconductor may be formed of, for example, a GaN-based semiconductor.

A nitride semiconductor layer 123 is formed on the second conductive cladding layer 121, and the nitride semiconductor layer 123 includes a plurality of semiconductor layers that are alternately arranged. In the plurality of semiconductor layers, the first semiconductor layer 131 and the second semiconductor layer 133 are alternately arranged. The first semiconductor layer 131 may be formed of a semiconductor having a composition formula of _{In x Al y Ga 1 -x- y} N (0 <x≤0.1, 0 <y≤0.19, 0 <x + y <1) The second semiconductor layer 132 is formed of a semiconductor having a composition formula of In _a Al _b Ga _{1 -a- b} N (0 <a <0.1, 0.15 <b <1, 0 <a + b <1). Can be. The first semiconductor layer 131 and the second semiconductor layer 132 may include a second conductive dopant, and may be formed to have different dopant concentrations.

Indium composition ratios of the first semiconductor layer 131 and the second semiconductor layer 132 are different from each other, and aluminum compositions of the first semiconductor layer 131 and the second semiconductor layer 132 are different from each other. do. The indium composition ratio of the first semiconductor layer 131 is higher than the indium composition ratio of the second semiconductor layer 132, and the aluminum composition ratio of the first semiconductor layer 131 is the aluminum composition ratio of the second semiconductor layer 132. Lower than

The indium composition ratio (x) of the first semiconductor layer 131 is higher than the indium composition ratio (x> a) of the second semiconductor layer 132 within a range of 0.1% to 10%, and the second semiconductor layer The aluminum composition ratio y of 132 may be higher than the aluminum composition ratio b> y of the first semiconductor layer 131 within a range of 15% to 19%.

The period of the first semiconductor layer 131 and the second semiconductor layer 132 may be formed of 5 to 30 cycles, for example, may be formed of 15 to 20 cycles.

The nitride semiconductor layer 123 may have a thickness of about 10 nm to about 100 nm, for example, about 40 nm to about 60 nm. The first semiconductor layer 131 and the second semiconductor layer 132 may be formed to have the same thickness, but is not limited thereto.

The growth method of the nitride semiconductor layer 123 is as follows. At a predetermined growth temperature (850 to 950 ° C.), for example, a p-type InAlGaN layer having a predetermined thickness may be formed by supplying a gas including a p-type dopant such as NH ₃ , TMGa (or TEGa), TMIn, TMAl and Mg. . In this case, when the first semiconductor layer 131 and the second semiconductor layer 132 are grown, the injection amount of NH ₃ is periodically changed. Here, the carrier gas may supply N ₂ or supply N ₂ and H ₂ together. The supply amount of N ₂ is periodically changed when the first semiconductor layer 131 is grown and when the second semiconductor layer 132 is grown.

The first semiconductor layer 131 is formed in a semiconductor layer having a compositional formula of _{In x Al y Ga 1 -x- y} N (0 <x≤0.1, 0 <y≤0.19, 0 <x + y <1) The second semiconductor layer 132 may be formed of a semiconductor having a composition formula of In _a Al _b Ga _{1 -a- b} N (0 <a <0.1, 0.15 <b <1, 0 <a + b <1). Can be. In this case, the deposition rate of indium may be adjusted according to the change of the injection amount of N ₂ .

Accordingly, the amount of N ₂ injected during the growth of the second semiconductor layer 132 is increased by the amount of N ₂ injected during the growth of the first semiconductor layer 131. Accordingly, the indium composition ratio of the first semiconductor layer 131 is higher than the indium composition ratio (x> a) of the second semiconductor layer 132, and the aluminum composition ratio of the first semiconductor layer 131 is higher than that of the second semiconductor layer 131. It is formed lower than the aluminum composition ratio (b> y) of the semiconductor layer 132. In addition, since the concentration of the dopant of the second conductive type decreases as the injection amount of N ₂ increases, the dopant concentration of the second semiconductor layer 132 is lower than the dopant concentration of the first semiconductor layer 131.

Here, the injection amount of N ₂ of the second semiconductor layer 132 is about 2 to 5 times larger than the injection amount of N ₂ of the first semiconductor layer 131.

The indium composition ratio of the first semiconductor layer 131 is higher than the indium composition ratio of the second semiconductor layer 132 within a range of 0.1% to 10%, and the aluminum composition ratio of the second semiconductor layer 132 is 15. It may be formed higher than the aluminum composition ratio of the first semiconductor layer 131 in the range of% ~ 19%.

Periods of the first semiconductor layer 131 and the second semiconductor layer 132 may be 5 to 30 cycles, specifically 15 to 20 cycles, and the thickness of each of the semiconductor layers 131 and 132 may be 0.1 nm or more. It may be formed with the same thickness to each other within the 10nm range.

The crystallinity of the first semiconductor layer 131 and the second semiconductor layer 132 may be improved by controlling the amount of N ₂ injected during the growth of the first semiconductor layer 131 and the second semiconductor layer 132. I can let you. If the crystallinity of the nitride semiconductor layer 130 is improved, ESD and hole injection efficiency may be improved. In addition, the defect density of the nitride semiconductor layer 132 may have a lower density than an upper surface thereof.

As another method, the growth of the first semiconductor layer 131 and the second semiconductor layer 132 can be grown by controlling the injection amount of TMAl in the metal source, and by improving the injection amount of the aluminum to improve the hole injection efficiency Can give If the hole injection efficiency is improved, the internal quantum efficiency may be improved.

The first semiconductor layer 131 and the second semiconductor layer 132 may be formed of a superlattice structure (SLS) having different indium composition ratios.

As another example, a method of controlling the composition ratio of the first semiconductor layer 131 and the second semiconductor layer 132 during the growth of the first and second semiconductor layers 131 and 132, not N _{2, which} is a carrier gas, NH ₃ can be adjusted. In this case, since the composition ratio of the first semiconductor layer 131 and the second semiconductor layer 132 may be more affected than the N ₂ gas, the semiconductor layers 131 and 132 may be formed by adjusting the supply amount of NH ₃ .

Meanwhile, a second conductive semiconductor layer 125 is formed on the nitride semiconductor layer 125, and the second conductive semiconductor layer 125 includes a dopant of a second conductive type. The second conductive semiconductor layer 125 may be formed of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, and the like. When the second conductive semiconductor layer 125 is a P-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as a P-type dopant.

The conductive types of the layers of the light emitting structure 150 may be formed to be opposite to each other. For example, the second conductive semiconductor layers 121, 123, 125 may be an N type semiconductor layer, and the first conductive semiconductor layer 117 may be a P type semiconductor. It can be implemented in layers. Further, an N-type semiconductor layer, which is a third conductive semiconductor layer having a polarity opposite to that of the second conductive type, may be further formed on the second conductive semiconductor layer 125. The semiconductor light emitting device 100 may define the first conductive semiconductor layer 117, the active layer 119, and the second conductive semiconductor layer 125 as a light emitting structure 150. 150) may be implemented as any one of an NP junction structure, a PN junction structure, an NPN junction structure, and a PNP junction structure. The N-P and P-N junctions have an active layer disposed between the two layers, and the N-P-N junction or P-N-P junction includes at least one active layer between the three layers.

According to the embodiment, the first semiconductor layer 131 and the second semiconductor layer 133 having different indium composition ratios are formed in the nitride semiconductor layer 123 disposed between the active layer 119 and the second conductive semiconductor layer 125. By alternately forming, the crystallinity of the nitride semiconductor layer 123 can be improved, and the hole injection efficiency into the active layer 119 can be improved.

FIG. 2 is an example of a light emitting device having a horizontal electrode structure using the light emitting device of FIG. 1.

Referring to FIG. 2, in the light emitting device 101, an electrode layer 141 and a second electrode 145 are formed on a second conductive semiconductor layer 125, and a first electrode () is formed on the first semiconductor layer 117. 143 is formed.

The electrode layer 141 is a current diffusion layer and may be formed of a material having transparency and electrical conductivity. The electrode layer 141 may be formed to have a refractive index lower than that of the compound semiconductor layer.

The electrode layer 141 is formed on the upper surface of the second conductive semiconductor layer 125, and the material may be indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), or indium aluminum zinc oxide (IGZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), ZnO, IrOx, RuOx, NiO, etc. It may be selected from, and may be formed of at least one layer. The electrode layer 141 may be formed as a reflective electrode layer, and the material may be selectively formed among metal materials such as Al, Ag, Pd, Rh, Pt, and Ir.

The second electrode 145 may be formed on the second conductive semiconductor layer 125 and / or the electrode layer, and may include an electrode pad. The second electrode 145 may further include a current spreading pattern having an arm structure or a finger structure. The second electrode 145 may be made of a metal having the characteristics of an ohmic contact, an adhesive layer, and a bonding layer, but is not limited thereto.

A first electrode 143 is formed on a portion of the first conductive semiconductor layer 117. The first electrode 143 and the second electrode 145 are Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au and Au It can be chosen from the optional alloys.

An insulating layer may be further formed on the surface of the light emitting device 101, and the insulating layer may prevent an interlayer short of the light emitting structure 145 and prevent moisture penetration.

3 and 4 illustrate a vertical light emitting device and a manufacturing process thereof using the light emitting device of FIG. 1.

Referring to FIG. 3, a channel layer 163 and a current blocking layer 161 are disposed on the second conductive semiconductor layer 125, and the channel layer 163, the current blocking layer 161, and the second conductive type are disposed on the second conductive semiconductor layer 125. An ohmic contact layer 165 is formed on the semiconductor layer 125. The current blocking layer 161 is SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may include at least one of the, at least one may be formed between the channel layer 163.

The channel layer 163 may be formed along the upper edge of the second conductive semiconductor layer 125 and may have a loop shape or a frame shape. The channel layer 163 may include ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ Or the like.

The second electrode 170 may be formed on the second conductive semiconductor layer 125. The second electrode 170 may include a plurality of conductive layers 165, 167, and 169.

The second electrode 170 includes an ohmic contact layer 165, a reflective layer 167, and a bonding layer 169. The ohmic contact layer 165 may be a low conductive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, or a metal of Ni or Ag. A reflective layer 167 is formed on the ohmic contact layer 165, and the reflective layer 167 is composed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and a combination thereof. It may be formed into a structure including at least one layer of a material selected from the group. The reflective layer 167 may be in contact with the second conductive semiconductor layer 125, and may be in ohmic contact with a metal, or ohmic contact with a low conductive material such as ITO, but is not limited thereto.

A bonding layer 169 is formed on the reflective layer 167, and the bonding layer 169 may be used as a barrier metal or a bonding metal, and the material may be, for example, Ti, Au, Sn, Ni, Cr, or Ga. And at least one of In, Bi, Cu, Ag, and Ta and an optional alloy.

A support member 173 is formed on the bonding layer 169, and the support member 173 may be formed as a conductive member. The materials may include copper (Cu-copper), gold (Au-gold), and nickel ( Ni-nickel), molybdenum (Mo), copper-tungsten (Cu-W), a carrier wafer (eg, Si, Ge, GaAs, ZnO, SiC, etc.) may be formed of a conductive material. As another example, the support member 173 may be implemented as a conductive sheet.

3 and 4, after forming the support member 173, the growth substrate is removed. The growth method of the growth substrate may be removed by a physical method (eg, laser lift off) or / and a chemical method (eg, wet etching) to expose the first conductive semiconductor layer 117. Isolation is performed in the direction in which the growth substrate is removed to form a first electrode 181 on the first conductive semiconductor layer 117.

The upper surface of the first conductive semiconductor layer 117 may be formed of a light extraction structure 117A such as roughness. An outer portion of the channel layer 163 may be exposed to an outer side of the sidewall of the light emitting structure 150, and an inner portion of the channel layer 163 may be in contact with a lower surface of the second conductive semiconductor layer 125.

Accordingly, the vertical light emitting device 102 having the first electrode 181 and the support member 173 below the light emitting structure 150 may be manufactured.

5 is a view showing a light emitting device package according to a third embodiment.

Referring to FIG. 5, the light emitting device package 200 may include a body 210, a first lead electrode 211 and a second lead electrode 212 installed on the body 210, and the body 210. The light emitting device 101 electrically connected to the first lead electrode 211 and the second lead electrode 212, and the molding member 220 surrounding the light emitting device 101 on the body 210. It includes.

The body 210 may include a silicon material, a synthetic resin material, or a metal material. The body 210 includes a reflector 215 having a cavity therein and an inclined surface around the cavity 210 when viewed from above.

The first lead electrode 211 and the second lead electrode 212 are electrically separated from each other, and may be formed to penetrate the inside of the body 210. That is, some of the first lead electrode 211 and the second lead electrode 212 may be disposed inside the cavity, and the other part may be disposed outside the body 210.

The first lead electrode 211 and the second lead electrode 212 may supply power to the light emitting device 101, and may reflect light generated from the light emitting device 101 to increase light efficiency. It may also function to discharge the heat generated by the light emitting device 101 to the outside.

The light emitting device 101 may be installed on the body 210 or on the first lead electrode 211 or / and the second lead electrode 212.

The wire 216 of the light emitting device 101 may be electrically connected to either the first lead electrode 211 or the second lead electrode 212, but is not limited thereto.

The molding member 220 may surround the light emitting device 1 to protect the light emitting device 1. In addition, the molding member 220 may include a phosphor, and the wavelength of light emitted from the light emitting device 101 may be changed by the phosphor.

The light emitting device or the light emitting device package according to the embodiment may be applied to the light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arranged, and includes a display device shown in FIGS. 6 and 7 and a lighting device shown in FIG. Etc. may be included.

6 is an exploded perspective view of a display device according to an exemplary embodiment.

Referring to FIG. 6, the display device 1000 includes a light guide plate 1041, a light emitting module 1031 that provides light to the light guide plate 1041, a reflective member 1022 under the light guide plate 1041, and the light guide plate 1041. A bottom cover 1011 that houses an optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, the light guide plate 1041, a light emitting module 1031, and a reflective member 1022. ), But is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse the light provided from the light emitting module 1031 to make a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 is disposed on at least one side of the light guide plate 1041 to provide light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

The light emitting module 1031 may include at least one, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device package 200 according to the above-described embodiment, and the light emitting device package 200 may be arranged on the substrate 1033 at predetermined intervals. have. The substrate may be a printed circuit board, but is not limited thereto. In addition, the substrate 1033 may include a metal core PCB (MCPCB, Metal Core PCB), flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 200 is mounted on the side surface of the bottom cover 1011 or the heat dissipation plate, the substrate 1033 may be removed. A part of the heat radiation plate may be in contact with the upper surface of the bottom cover 1011. Therefore, heat generated in the light emitting device package 200 may be discharged to the bottom cover 1011 via the heat dissipation plate.

The plurality of light emitting device packages 200 may be mounted on the substrate 1033 such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device package 200 may directly or indirectly provide light to a light incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 reflects the light incident on the lower surface of the light guide plate 1041 and supplies the reflected light to the display panel 1061 to improve the brightness of the display panel 1061. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to a top cover (not shown), but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by transmitting or blocking light provided from the light emitting module 1031. The display device 1000 can be applied to video display devices such as portable terminals, monitors of notebook computers, monitors of laptop computers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal / vertical prism sheet, a brightness enhanced sheet, and the like. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet concentrates incident light on the display panel 1061. The brightness enhancing sheet reuses the lost light to improve the brightness I will. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

The light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.

7 is a diagram illustrating a display device having a light emitting device package according to an exemplary embodiment.

Referring to FIG. 7, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the light emitting device package 200 disclosed above is arranged, an optical member 1154, and a display panel 1155. .

The substrate 1120 and the light emitting device package 200 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit (not shown).

The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

The optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, and the horizontal and vertical prism sheets condense the incident light onto the display panel 1155. The brightness enhancing sheet reuses the lost light to improve the brightness .

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1060.

8 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 8, the lighting device 1500 may include a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device package 200 according to an embodiment mounted on the substrate 1532. The plurality of light emitting device packages 200 may be arranged in a matrix form or spaced apart at predetermined intervals.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.

At least one light emitting device package 200 may be mounted on the substrate 1532. Each of the light emitting device packages 200 may include at least one light emitting diode (LED) chip. The LED chip may include a light emitting diode in a visible light band such as red, green, blue, or white, or a UV light emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 200 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Reference Signs List 100 light emitting element, 111 substrate, 113 buffer layer, 115 low conductivity layer, 117 first conductive semiconductor layer, 119 active layer, 121 second conductive semiconductor layer, 123 nitride semiconductor layer, 125 2 conductive semiconductor layer, 131: first semiconductor layer, 133: second semiconductor layer

Claims (13)

A first conductive semiconductor layer;
A second conductive semiconductor layer on the first conductive semiconductor layer;
An electrode on the second conductive semiconductor layer;
An active layer on the first conductive semiconductor layer and the second conductive semiconductor layer;
A nitride semiconductor layer disposed between the active layer and the second conductive semiconductor layer,
The nitride semiconductor layer includes a plurality of first semiconductor layers and a second semiconductor layer disposed alternately,
A first semiconductor layer of the plurality has a composition formula of _{In x Al y Ga 1 -x- y} N (0 <x≤0.1, 0.15≤y≤0.19, 0 <x + y <1),
The plurality of second semiconductor layers may include an InAlGaN layer having an indium composition ratio different from that of the indium (In) composition of the first semiconductor layer. The light emitting device of claim 1, wherein an aluminum composition ratio of the first semiconductor layer and the second semiconductor layer is different from each other. The light emitting device of claim 1, wherein a period of the first semiconductor layer and the second semiconductor layer includes 5 to 30 cycles. The method of claim 3, wherein the nitride semiconductor layer has a thickness of 10nm to 100nm,
The first semiconductor layer and the second semiconductor layer has the same thickness light emitting device. The light emitting device of claim 1, wherein an indium composition ratio of the first semiconductor layer and the second semiconductor layer is in a range of 0.1% to 10%. The light emitting device of claim 1 or 5, wherein an aluminum composition ratio of the first semiconductor layer and the second semiconductor layer is in a range of 15% to 19%. The light emitting device of claim 6, wherein the aluminum composition ratios of the first semiconductor layer and the second semiconductor layer have different composition ratios. The light emitting device of claim 1, wherein the first semiconductor layer and the second semiconductor layer include a dopant of a second conductivity type. The light emitting device of claim 6, further comprising a second conductive clad layer between the nitride semiconductor layer and the active layer. The light emitting device of claim 1, wherein the second conductive semiconductor layer and the nitride semiconductor layer are P-type semiconductor layers. 2. The light emitting device of claim 1, wherein the first semiconductor layer has a higher indium composition ratio and a smaller aluminum composition ratio than the second semiconductor layer among the first semiconductor layer and the second semiconductor layer. The light emitting device of claim 1;
A body having a cavity;
A plurality of lead electrodes disposed in the cavity and connected to the light emitting elements; And
The light emitting device package including a molding member in the cavity. Forming a first conductive semiconductor layer on the substrate;
Forming an active layer on the first conductive semiconductor layer;
Forming a nitride semiconductor layer having a second conductivity type dopant on the active layer; And
Forming a second conductive semiconductor layer on the nitride semiconductor layer,
The forming of the nitride semiconductor layer may include a plurality of first semiconductor layers having a composition formula of In _x Al _y Ga _1-xy N (0 <x ≦ 0.1, 0 <y ≦ 0.19, 0 <x + y <1); A plurality of second semiconductor layers having a composition formula of In _a Al _b Ga _{1 -a- b} N (0 <a <0.1, 0.15 <b <1, 0 <a + b <1) are alternately formed;
The method of manufacturing the light emitting device to increase the injection amount of N ₂ or NH ₃ when forming the second semiconductor layer than when forming the first semiconductor layer.

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