KR20130009315A - Light emitting device and method for manufacturing the same - Google Patents

Abstract

PURPOSE: A light emitting device and a manufacturing method thereof are provided to prevent the generation of cracks by using a hole in a stress relaxation layer. CONSTITUTION: A buffer layer(120) is grown on a substrate. A stress relaxation layer(140) is grown on the buffer layer. A hole is formed by etching the stress relaxation layer. A light emitting structure(160) is grown on the stress relaxation layer. The light emitting structure includes a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer.

Description

Light emitting device and method for manufacturing the same

The embodiment relates to a light emitting device and a method of manufacturing the same.

Light emitting devices such as light emitting diodes or laser diodes using semiconductors of Group 3-5 or 2-6 compound semiconductor materials of semiconductors have various colors such as red, green, blue, and ultraviolet rays due to the development of thin film growth technology and device materials. It is possible to realize efficient white light by using fluorescent materials or combining colors, and it has low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps. Has an advantage.

Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting, automotive headlights, and traffic lights.

A light emitting diode is manufactured by growing a light emitting structure with GaN on a substrate such as silicon, and cracks due to warp and stress may occur on a wafer due to a mismatch between the lattice constant between the silicon substrate and GaN. have.

As described in Korean Patent Laid-Open Publication No. 10-2006-0121413, there is an attempt to alleviate stress and strain due to lattice mismatch by applying a structure in which light is emitted from a plurality of nanorod structures spaced apart from each other.

The embodiment seeks to ensure structural stability of the light emitting device.

Embodiments include growing a buffer layer over a substrate; Growing a stress relaxation layer on the buffer layer; Etching the stress relief layer to form holes; And growing a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on the stress relaxation layer.

The substrate may comprise silicon.

The hole may be formed by dry etching.

Dry etching may use one of Ar, Cl ₂ , BCl ₃ .

The hole can be formed with a diameter of 5-20 micrometers.

The stress mitigating layer may be formed of AlN or InN.

A method of manufacturing a light emitting device includes growing a first GaN layer between a buffer layer and a stress relaxation layer; And growing a second GaN layer between the stress mitigating layer and the light emitting structure.

Holes may be formed from the second GaN layer to the stress relaxation layer.

The total thickness of the first GaN layer, the second GaN layer, and the stress relaxation layer may be 2 to 2.5 micrometers.

Holes may be formed within a distance of 5 millimeters from the edge of the stress relief layer.

Cracks may occur during growth of the first GaN layer and the second GaN layer, and the generation of the cracks may stop in the holes.

Another embodiment includes a stress relaxation layer in which holes are formed; A light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer formed on the stress relaxation layer; And a first electrode and a second electrode formed on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, and the light emitting structure has a light emitting device having a pattern corresponding to the hole.

The light emitting device according to the embodiment ensures the structural stability of the device.

1 to 7E are views showing a manufacturing method of an embodiment of a light emitting device,
8A to 8E are views illustrating in detail the structure of a light emitting structure and the like in the light emitting device of FIG. 7A;
9 is a view showing an embodiment of a light emitting device package in which a light emitting device is disposed,
10 is a view illustrating an embodiment of a lighting apparatus in which a light emitting device package is disposed;
11 is a diagram illustrating an embodiment of a display device in which a light emitting device package is disposed.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

In the description of the embodiment according to the present invention, when described as being formed on the "on or under" of each element, the (up) or down (on) or under) includes both two elements being directly contacted with each other or one or more other elements are formed indirectly between the two elements. In addition, when expressed as "up" or "on (under)", it may include not only an up direction but a down direction based on one element. In addition, the criteria for above or below each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

1 to 7E illustrate a method of manufacturing an embodiment of a light emitting device.

As shown in FIG. 1, the buffer layer 120 and the first nitride semiconductor layer 130 are formed on the substrate 110.

The substrate 110 may use a conductive substrate or an insulating substrate, for example, silicon, sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga ₂ 0 ₃ You can use one. An uneven structure may be formed on the substrate 110, but is not limited thereto. The substrate 110 may be wet-cleaned to remove impurities on the surface.

The buffer layer 120 is to alleviate the difference in lattice mismatch and thermal expansion coefficient of the material between the first nitride semiconductor layer 130 and the substrate 110 which will be described later. The material of the buffer layer 130 may be formed of at least one of Group III-V compound semiconductors, for example, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. An undoped semiconductor layer may be formed on the buffer layer, but the present invention is not limited thereto.

The first nitride semiconductor layer 130 is formed on the buffer layer 120. For example, the first nitride semiconductor layer 130 may be made of n-doped or undoped GaN.

As shown in FIG. 3A, a stress relaxation layer 140 may be grown on the first nitride semiconductor layer 130. The stress relief layer 140 may be formed of at least one of AlN and InN. In addition, the stress relief layer 140 may be formed of two or more layers.

3B, holes may be formed in the stress relaxation layer 140. The hole may be formed only at the edge region of the stress relaxation layer 140 as shown, since cracks may occur from an edge region of the light emitting structure during growth of the light emitting structure to be described later.

The holes merge or absorb cracks that may occur upon growth of the light emitting structure, thereby preventing the cracks from growing further. The hole may be formed with a diameter of 5 to 20 micrometers. If the diameter of the hole is large, it is advantageous for absorption of cracks, but if a large hole is present in the reference plane for growth of the light emitting structure, abnormal growth of the light emitting structure may be caused, and the diameter of the hole If it is too small, it is not enough for the absorption of cracks.

The hole may be formed in the stress relief layer 140 by dry etching. The hole may penetrate the stress relief layer 140 or may be formed in the shape of a groove up to a partial region. In addition, holes may be formed in some regions of the first nitride semiconductor layer 130 under the stress relaxation layer 140.

The hole may be formed by a dry etching method, which may be etched using argon (Ar), chlorine (Cl ₂ ) and boron chloride (BCl ₃ ). And, the hole may be formed at a distance within 5 millimeters from the edge of the stress relief layer, if it is formed in the inner side can not prevent the growth of cracks in the outer region of the hole.

3c shows one embodiment of a cross section of the hole. Each cross section is a cross section parallel to each layer in FIG. 3A. Holes may be formed in the shape of other polygons in addition to circles, squares, and hexagons. The diameter of the above-described holes means a diameter when the cross section of the hole is circular, and when the cross section of the hole is a polygon, the length of one side or a diagonal line is determined. It can mean.

3D illustrates another embodiment of forming a hole in the stress relaxation layer 140. The hole is formed in the edge region of the stress relaxation layer 140, but the distance from the edge of the stress relaxation layer 140 to each hole is not formed.

As shown in FIG. 4A, the second nitride semiconductor layer 150 is formed on the stress relaxation layer 140. For example, the second nitride semiconductor layer 150 may be formed of n-doped GaN. In this case, the second nitride semiconductor layer 150 may be inserted into at least a portion of the hole formed in the stress relaxation layer 140.

4B illustrates cracks formed on the surface of the second nitride semiconductor layer 150 after growth. Cracks are absorbed by the holes formed in the stress mitigating layer and the growth is stopped, which is much extinct in comparison with FIG. 4C which will be described later.

FIG. 4C illustrates cracks formed on a surface after growth of the second nitride semiconductor layer 150 when the stress relaxation layer and / or the hole are not formed. Compared to the embodiment shown in FIG. 4B, the crack is extended to a wide area. That is, when GaN is grown on a substrate such as silicon, warp of the wafer occurs due to a mismatch between the silicon substrate and the lattice of GaN, and cracks grow and expand due to stress. It is.

In the embodiment of FIG. 4B, holes formed in the growth paths of the cracks after the stress relaxation layer growth merge or absorb the cracks, thereby preventing growth or expansion of the cracks. Therefore, the crack growth region is limited to the edge direction more than the entire region of the wafer.

In addition, as shown in FIG. 5, the light emitting structure 160 is grown on the second nitride semiconductor layer 150. The light emitting structure 160 includes the first conductive semiconductor layer 162, the active layer 164, and the first conductive semiconductor layer 164. The second conductive semiconductor layer 166 may be included.

The light emitting structure 160 may include, for example, a metal organic chemical vapor deposition (MOCVD), a chemical vapor deposition (CVD), a plasma chemical vapor deposition (PECVD), a molecular beam. Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), etc. may be formed using, but is not limited thereto.

The first conductivity-type semiconductor layer 162 may be implemented as a group III-V compound semiconductor doped with a first conductivity type dopant, and when the first conductivity type semiconductor layer 162 is an N-type semiconductor layer, The first conductive dopant may be an N-type dopant and may include Si, Ge, Sn, Se, or Te, but is not limited thereto.

The first conductivity type semiconductor layer 162 may include a semiconductor material having a composition formula of Al _x In _y Ga _(1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). It may include. The first conductive semiconductor layer 122 may be formed of any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP.

In the active layer 164, electrons injected through the first conductive semiconductor layer 162 and holes injected through the second conductive semiconductor layer 166 formed thereafter meet each other to form an energy band inherent to the active layer (light emitting layer) material. The layer may emit light having energy determined by the light, and the light emitted from the active layer 164 may emit light in the ultraviolet region in addition to the visible region.

The active layer 164 may be formed of at least one of a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure. For example, the active layer 120 may be injected with trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) to form a multi-quantum well structure. It is not limited to this.

The well layer / barrier layer of the active layer 164 is formed of one or more pair structures of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) / AlGaP. But it is not limited thereto. The well layer may be formed of a material having a lower band gap than the band gap of the barrier layer.

A conductive clad layer (not shown) may be formed on or under the active layer 164. The conductive clad layer may be formed of an AlGaN-based semiconductor, and may have a higher band gap than the band gap of the active layer 164.

The second conductive type semiconductor layer 166 is a second conductive type dopant is doped III-V compound semiconductor, for example _{-5, In x Al y Ga 1 -x-} y N (0≤x≤1, 0≤y≤ And 1, 0 ≦ x + y ≦ 1). When the second conductive semiconductor layer 166 is a P-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, Ba, or the like as a P-type dopant.

As shown in FIG. 6, the mesa-etched portion of the second conductive semiconductor layer 166, the active layer 164, and a portion of the first conductive semiconductor layer 162 is etched to form the first conductive semiconductor layer 166. Part of the That is, when the substrate 110 is formed of an insulating material, a space in which an electrode is to be formed to secure a current to a part of the first conductive semiconductor layer 162 is secured.

As shown in FIG. 7A, a second electrode 175 and a first electrode 170 are formed in each of the second conductive semiconductor layer 166 and the exposed first conductive semiconductor layer 162. The first electrode 170 and the second electrode 175 include at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au). It may be formed in a single layer or a multilayer structure.

The above-described holes may be formed in not only the stress mitigating layer 140 but also other layers. That is, as shown in FIG. 7B, holes may be formed from the second nitride semiconductor layer 150 to the stress relief layer 140, and as shown in FIG. 7C, the holes may be formed in the second nitride semiconductor layer 150. Can penetrate the stress relief layer 140 and up to the first nitride semiconductor layer 130, and holes are formed from the second nitride semiconductor layer 150 to the stress relief layer 140 as shown in FIG. 7D. And through the first nitride semiconductor layer 130 and may be formed in a portion of the buffer layer 120. As shown in FIG. 7E, holes may be formed from the stress relief layer 140 to the first nitride semiconductor layer 130. It may be formed up to a part.

In addition, an uneven structure is formed on the surface of the second conductivity-type semiconductor layer 166 to increase the light extraction efficiency of the light emitting device. In this case, the uneven structure may be formed by patterning the surface of the second conductive semiconductor layer 166 by wet etching or dry etching, and the uneven structure may be irregular or regular.

In FIG. 7, the thickness t of the entire first nitride semiconductor layer 130, the stress relaxation layer 140, and the second nitride semiconductor layer 150 may be 2 to 2.5 micrometers. If the thickness t is too thin, it may not be sufficient to prevent the formation of holes and expansion of cracks.

8A to 8E are detailed views illustrating the structure of a light emitting structure and the like in the light emitting device of FIG. 7A.

In the light emitting device manufactured by the process of FIGS. 1 to 7A, holes in the stress relaxation layer may inhibit growth of cracks, and cracks may be reduced, but a hole in a light emitting structure, etc. may remain due to the holes. In this case, since the hole in the stress relaxation layer may be formed in the edge region of the stress relaxation layer at the wafer level, the hole may be observed only in the edge region of the stress relaxation layer in each device after the hole is diced by the light emitting device. no.

In FIG. 8A, the boundary of each layer in "A" of FIG. 7 is shown typically.

Holes are formed in the stress relaxation layer 140 on the first nitride semiconductor layer 130, and the second nitride semiconductor layer 150 and the light emitting structure 160 on the stress relaxation layer 140 correspond to the holes. Patterns b and c are also formed.

Such a pattern is found in light emitting structures and the like formed in edge regions at the wafer level. FIG. 8B is a diagram illustrating a structure when the mesa region of the light emitting structure exists on the region where the patterns b and c are formed. Holes are formed in the stress relief layer 140 over the mesa region, and patterns (b and c) are also formed in the second nitride semiconductor layer 150 and the first conductive semiconductor layer 162 in the light emitting structure corresponding to the holes. It is becoming.

8C illustrates a structure in which the above-described patterns b and c exist outside the mesa region in the horizontal light emitting device.

The light emitting device having the above-described internal boundary structure reduces the growth of cracks during epitaxial growth and blocks the diffusion thereof, thereby improving stability and light efficiency of the device through stable growth of the light emitting structure.

8D and 8E are cross-sectional views of the stress relief layer 140 in FIG. 7A. When the cross-section of the light emitting device is rectangular or similar, holes in FIG. 8D may be formed near the vertices of the stress relaxation layer 140, and holes in FIG. 8E are near the sides of the stress relaxation layer 140. In both embodiments, holes are formed in edge regions of the stress relaxation layer 140 in the light emitting device.

9 is a view showing an embodiment of a light emitting device package including a light emitting device.

The light emitting device package 200 according to the embodiment includes a body 210 including a cavity, a first lead frame 221 and a second lead frame 222 installed on the body 210, and the body. The light emitting device 100 according to the above-described embodiments installed in the 210 and electrically connected to the first lead frame 221 and the second lead frame 222, and the molding part 270 formed in the cavity. It includes.

The body 210 may include a silicon material, a synthetic resin material, or a metal material. When the body 210 is made of a conductive material such as a metal material, an insulating layer is coated on the surface of the body 210 to prevent an electrical short between the first and second lead frames 221 and 222 .

The first lead frame 221 and the second lead frame 222 are electrically separated from each other, and supplies a current to the light emitting device 100. In addition, the first lead frame 221 and the second lead frame 222 may increase the light efficiency by reflecting the light generated by the light emitting device 100, heat generated by the light emitting device 100 Can be discharged to the outside.

The light emitting device 100 may be installed on the body 210 or on the first lead frame 221 or the second lead frame 222. In the present exemplary embodiment, the first lead frame 221 and the light emitting device 250 are directly energized, and the second lead frame 222 and the light emitting device 100 are connected through a wire 260. The light emitting device 250 may be connected to the lead frames 221 and 222 by a flip chip method or a die bonding method in addition to the wire bonding method.

The molding part 270 may surround and protect the light emitting device 100. In addition, the phosphor 280 is conformally coated on the molding part 270 in a separate layer from the molding part 270. In this structure, the phosphor 280 is uniformly distributed, so that the wavelength of the light emitted from the light emitting device 250 may be converted in the entire region where the light of the light emitting device package 200 is emitted.

Light in the first wavelength region emitted from the light emitting device 100 is excited by the phosphor 280 and converted into light in the second wavelength region, and the light in the second wavelength region passes through a lens (not shown). The light path can be changed.

The above-described light emitting device package 200 may reduce the growth of cracks during epitaxial growth in the light emitting device 100 and block its diffusion, thereby improving stability and light efficiency of the device through stable growth of the light emitting structure.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, and for example, the lighting system may include a lamp or a street lamp. .

Hereinafter, an illumination device and a backlight unit will be described as an embodiment of a lighting system in which the above-described light emitting device package is disposed.

10 is a view illustrating an embodiment of a lighting apparatus in which a light emitting device package is disposed.

The lighting apparatus according to the embodiment includes a light source 600 for projecting light, a housing 400 in which the light source 600 is embedded, a heat dissipation part 500 for dissipating heat from the light source 600, and the light source 600. And a holder 700 for coupling the heat dissipation part 500 to the housing 400.

The housing 400 includes a socket coupling part 410 coupled to an electric socket and a body part 420 connected to the socket coupling part 410 and having a light source 600 embedded therein. One air flow port 430 may be formed in the body portion 420.

A plurality of air flow port 430 is provided on the body portion 420 of the housing 400, wherein the air flow port 430 is composed of one air flow port, or a plurality of flow ports as shown in the radial arrangement Various other arrangements are also possible.

The light source 600 includes a plurality of light emitting device packages 650 on the circuit board 610. Here, the circuit board 610 may be inserted into the opening of the housing 400, and may be made of a material having a high thermal conductivity to transmit heat to the heat dissipating unit 500, as described later.

A holder 700 is provided below the light source, and the holder 700 may include a frame and another air flow port. In addition, although not shown, an optical member may be provided under the light source 100 to diffuse, scatter, or converge light projected from the light emitting device package 150 of the light source 100.

The above-described lighting apparatus reduces the growth of cracks and prevents the growth of the cracks during the epitaxial growth in the light emitting device in the light emitting device package, thereby improving the stability and light efficiency of the device through the stable growth of the light emitting structure.

11 is a diagram illustrating an embodiment of a display device in which a light emitting device package is disposed.

As shown, the display device 800 according to the present exemplary embodiment is disposed in front of the light source modules 830 and 835, the reflector 820 on the bottom cover 820, and the reflector 820. The light guide plate 840 for guiding light emitted from the front of the display device, the first prism sheet 850 and the second prism sheet 860 disposed in front of the light guide plate 840, and the second prism sheet ( And a color filter 880 disposed in front of the panel 870 disposed in front of the panel 870.

The light source module includes the above-described light emitting device package 835 on the circuit board 830. Here, the PCB 830 may be used as the circuit board 830, and the light emitting device package 835 is as described with reference to FIG. 13.

The bottom cover 810 may accommodate components in the display device 800. The reflective plate 820 may be provided as a separate component as shown in the drawing, or may be disposed on the rear surface of the light guide plate 840, or The bottom cover 810 may be provided in the form of a coating with a highly reflective material.

Here, the reflection plate 820 can be made of a material having a high reflectance and can be used in an ultra-thin shape, and polyethylene terephthalate (PET) can be used.

The light guide plate 840 scatters light emitted from the light emitting device package module so that the light is uniformly distributed over the entire screen area of the LCD. Accordingly, the light guide plate 830 is made of a material having a good refractive index and transmittance. The light guide plate 830 may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), or polyethylene (PE). In addition, the light guide plate may be omitted, and thus an air guide method in which light is transmitted in the space on the reflective sheet 820 may be possible.

The first prism sheet 850 is formed of a translucent and elastic polymer material on one surface of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, the plurality of patterns may be provided in the stripe type and the valley repeatedly as shown.

In the second prism sheet 860, the direction of the floor and the valley of one surface of the support film may be perpendicular to the direction of the floor and the valley of one surface of the support film in the first prism sheet 850. This is to evenly distribute the light transmitted from the light source module and the reflective sheet in all directions of the panel 870.

In the present embodiment, the first prism sheet 850 and the second prism sheet 860 form an optical sheet, which is composed of another combination, for example, a micro lens array or a diffusion sheet and a micro lens array. Or a combination of one prism sheet and a micro lens array.

The liquid crystal display panel (Liquid Crystal Display) may be disposed on the panel 870, in addition to the liquid crystal display panel 860 may be provided with other types of display devices that require a light source.

The panel 870 is a state in which the liquid crystal is located between the glass body and the polarizing plate is placed on both glass bodies in order to use the polarization of light. Here, the liquid crystal has an intermediate property between a liquid and a solid, and liquid crystals, which are organic molecules having fluidity like a liquid, are regularly arranged like crystals. The liquid crystal has a structure in which the molecular arrangement is changed by an external electric field And displays an image.

A liquid crystal display panel used in a display device is an active matrix type, and a transistor is used as a switch for controlling a voltage supplied to each pixel.

The front surface of the panel 870 is provided with a color filter 880 to transmit the light projected from the panel 870, only the red, green and blue light for each pixel can represent an image.

The display device described above may reduce crack growth and block diffusion of epitaxial growth in the light emitting device in the light emitting device package, thereby improving stability and light efficiency of the device through stable growth of the light emitting structure.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100 light emitting element 110 substrate
120: buffer layer 130, 150: first and second nitride semiconductor layer
140: stress relief layer 160: light emitting structure
162 and 166: first and second conductivity type semiconductor layers 164: active layer
170: first electrode 175: second electrode
200: light emitting device package 210: body
221, 222: first and second lead frame 260: wire
270: molding portion 280: phosphor layer
400 housing 500 heat dissipation unit
600: light source 700: holder
800: display device 810: bottom cover
820: reflector 830: circuit board module
840: Light guide plate 850, 860: First and second prism sheet
870 panel 880 color filter

Claims (16)

Growing a buffer layer over the substrate;
Growing a stress relaxation layer on the buffer layer;
Etching the stress relief layer to form holes; And
Growing a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the stress relaxation layer. The method of claim 1,
The substrate is a method of manufacturing a light emitting device comprising silicon. The method of claim 1,
The method of manufacturing a light emitting device for forming the hole by dry etching. The method of claim 3, wherein
The dry etching method of manufacturing a light emitting device using one of Ar, Cl ₂ , BCl ₃ . The method of claim 1,
Method for manufacturing a light emitting device for forming the hole to a diameter of 5 ~ 20 micrometers. The method of claim 1,
Method of manufacturing a light emitting device to form the stress relief layer of AlN or InN. The method of claim 1,
Growing a first GaN layer between the buffer layer and the stress relaxation layer; And
And growing a second GaN layer between the stress mitigating layer and the light emitting structure. The method of claim 7, wherein
The method of manufacturing a light emitting device to form the hole from the second GaN layer to the stress relaxation layer. The method of claim 7, wherein
The total thickness of the first GaN layer, the second GaN layer and the stress relaxation layer is 2 to 2.5 micrometers manufacturing method of the light emitting device. The method of claim 1,
And the hole is formed within a distance of 5 millimeters from the edge of the stress relaxation layer. The method of claim 7, wherein
A crack occurs during growth of the first GaN layer and the second GaN layer, and the generation of the crack is stopped in the hole. A stress relaxation layer in which holes are formed;
A light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer formed on the stress relaxation layer; And
A first electrode and a second electrode formed on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively;
The light emitting device has a pattern formed in the light emitting structure corresponding to the hole. 13. The method of claim 12,
The hole is a light emitting device formed with a diameter of 5 ~ 20 micrometers. 13. The method of claim 12,
The stress relief layer includes AlN or InN. 13. The method of claim 12,
The light emitting device further comprises a first GaN layer and a second GaN layer formed between the stress relief layer. 13. The method of claim 12,
The total thickness of the first GaN layer, the second GaN layer and the stress relaxation layer is 2 to 2.5 micrometers.

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