KR20130007088A - Method of measuring flatness of a reticle and apparatus for performing the same - Google Patents

Method of measuring flatness of a reticle and apparatus for performing the same Download PDF

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Publication number
KR20130007088A
KR20130007088A KR1020110063521A KR20110063521A KR20130007088A KR 20130007088 A KR20130007088 A KR 20130007088A KR 1020110063521 A KR1020110063521 A KR 1020110063521A KR 20110063521 A KR20110063521 A KR 20110063521A KR 20130007088 A KR20130007088 A KR 20130007088A
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KR
South Korea
Prior art keywords
reticle
flatness
vacuum
measuring
measured
Prior art date
Application number
KR1020110063521A
Other languages
Korean (ko)
Inventor
이호준
김희범
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020110063521A priority Critical patent/KR20130007088A/en
Publication of KR20130007088A publication Critical patent/KR20130007088A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034—Leveling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Abstract

PURPOSE: An apparatus and method for measuring the flatness of a reticle are provided to show an actual incline of the reticle by measuring the flatness of reticle absorbed by a vacuum chuck. CONSTITUTION: A reticle is provided to a vacuum chuck. The reticle is horizontally arranged on the vacuum chuck(ST210). The reticle is absorbed by providing the vacuum to the reticle(ST220). The reticle is scanned. The flatness of the reticle is measured(ST230). [Reference numerals] (AA) Start; (BB) End; (ST210) Horizontally arranging a reticle on a vacuum chuck; (ST220) Absorbing a reticle by providing the vacuum to the reticle; (ST230) Measuring the flatness of a reticle by measuring local pressures of vacuum applied to the reticle; (ST240) Transmitting measured flatness to semiconductor light exposure equipment

Description

METHOD OF MEASURING FLATNESS OF A RETICLE AND APPARATUS FOR PERFORMING THE SAME}

The present invention relates to a method for measuring flatness of a reticle and an apparatus for performing the same, and more particularly, to a method for measuring flatness of a reticle for forming a pattern on a semiconductor substrate, and an apparatus for performing such a method. .

Generally, an exposure process is performed on a film on a semiconductor substrate to form a desired pattern. The exposure process may include disposing a reticle on the film, irradiating light to the film through the reticle, and developing the film to which the light is irradiated. Meanwhile, the exposure equipment used in the exposure process may include a vacuum chuck for holding the reticle, and a lighting device for irradiating light with the reticle.

In order to accurately transfer the pattern of the reticle to the wafer, the reticle is disposed horizontally with respect to the wafer, and the patterns of the reticle are all required to be located at the same height. This is to improve the depth of focus of the wafer to obtain a high yield of semiconductor chips.

Since the pattern height of the already formed reticle cannot be adjusted, a technique for uniformly transferring an image by a reticle pattern having a height difference to the wafer surface has been introduced. According to the related art, the flatness measurement key formed in the peripheral area of the reticle is indirectly measured. However, since the flatness measurement key is formed in the peripheral area instead of the active area in which the reticle pattern is formed, information about the flatness of the pattern of the reticle cannot be accurately represented.

Further, according to the related art, in the reticle flatness measuring apparatus in the reticle manufacturing process, the flatness of the reticle is measured in a state where the reticle is disposed parallel to the gravity direction. That is, we did not consider the effect of gravity on the reticle. Because of this, fine deformation of the reticle due to gravity is not included in the measured flatness.

In addition, according to the related art, in the reticle flatness measuring device in the reticle manufacturing process, the flatness of the reticle is measured without the reticle is adsorbed on the vacuum chuck. When the reticle is adsorbed to the vacuum chuck, the vacuum adsorption force applied to the reticle, the deformation of the reticle by the pellicle attached to the reticle to prevent contamination of the reticle, and the like are not included in the measured flatness.

Thus, the flatness of the reticle measured through the method described above reflects the flatness of the material itself, but does not half the reticle flatness when actually used in wafer exposure equipment. As a result, the flatness measured by the flatness measuring device does not reflect the flatness in actual use in the wafer exposure equipment. The flatness measured by the wafer exposure equipment measures the final flatness of the reticle to which various pressures are applied, but does not reflect the flatness of the circuit area that is actually required, but reflects only the flatness of the outline. Thus, the measured flatness predicts indirect flatness, so both methods have drawbacks.

The present invention provides a method for accurately measuring the flatness of the reticle in consideration of various factors that may affect the flatness of the reticle.

The present invention also provides an apparatus for carrying out the measuring method described above.

According to the method for measuring the flatness of a reticle according to one aspect of the present invention, a vacuum is supplied from the vacuum chuck of the flatness measuring device to the reticle to adsorb the reticle. The entire reticle is scanned to measure the flatness of the reticle.

According to one embodiment of the present invention, the step of adsorbing the reticle comprises disposing the reticle horizontally on the vacuum chuck disposed perpendicular to the direction of gravity, and providing the vacuum from the vacuum chuck to the reticle. It may include a step.

According to another embodiment of the present invention, measuring the flatness of the reticle may include measuring local pressures of the vacuum applied to the reticle. Measuring the flatness of the reticle may further comprise measuring the gravity applied to the reticle.

According to another embodiment of the present invention, the measuring method may further include transmitting the flatness of the measured reticle to the semiconductor exposure equipment.

According to another aspect of the present invention, a flatness measuring apparatus of a reticle includes a vacuum chuck, a measuring unit, and a controller. The vacuum chuck provides a vacuum to the reticle to adsorb the reticle. The measuring unit measures the overall flatness of the reticle. The controller stores data relating to the flatness of the reticle measured by the measuring unit, and transmits the data to the semiconductor exposure equipment.

According to one embodiment of the invention, the vacuum chuck may be disposed orthogonal to the direction of gravity.

According to another embodiment of the invention, the vacuum chuck may have a plurality of adsorption holes for providing a variety of the vacuum to the reticle.

According to another embodiment of the invention, the measuring unit may comprise a scanner for scanning the front side of the reticle. The measuring unit may comprise a pressure sensor for measuring the local pressures of the vacuum applied to the reticle.

According to the present invention as described above, the total flatness of the reticle is measured in consideration of gravity, adsorption force, etc. applied to the reticle while the reticle is adsorbed on the vacuum chuck. Therefore, the overall flatness of the measured reticle can accurately represent the degree to which the reticle is actually inclined. As a result, since the flatness of the reticle is corrected by the semiconductor exposure equipment on the basis of the accurately measured flatness, the pattern of the reticle can be accurately transferred to the film.

1 is a cross-sectional view showing a flatness measuring device of the reticle according to an embodiment of the present invention.
FIG. 2 is a plan view of the vacuum chuck of the apparatus of FIG. 1. FIG.
3 is a flowchart sequentially illustrating a method of measuring flatness of a reticle using the apparatus of FIG. 1.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprises", "having", and the like are used to specify that a feature, a number, a step, an operation, an element, a part or a combination thereof is described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

Flatness measuring device of reticle

1 is a cross-sectional view showing a flatness measuring device of the reticle according to an embodiment of the present invention, Figure 2 is a plan view showing a vacuum chuck of the device of FIG.

1 and 2, the flatness measuring apparatus 100 of the reticle according to the present embodiment includes vacuum chucks 112 and 114, a measuring unit, and a controller 150.

In this embodiment, the vacuum chucks 112 and 114 consist of a pair arranged horizontally. That is, the vacuum chucks 112 and 114 are arranged along a direction substantially perpendicular to the direction of gravity. The reticle is placed on the top surfaces of the vacuum chucks 112 and 114. Thus, the reticle is also disposed along a direction substantially perpendicular to the direction of gravity. A pellicle to protect the reticle is attached to the bottom surface of the reticle.

In this embodiment, the vacuum chucks 112 and 114 have a plurality of adsorption holes 116. A vacuum is provided to the lower surface of the reticle through the adsorption holes 116, so that the reticle is firmly adsorbed to the upper surfaces of the vacuum chucks 112 and 114. Adsorption holes 116 may have substantially the same size. On the contrary, the adsorption holes 116 may have different sizes.

Vacuum pump 120 is connected to vacuum chucks 112, 114 via vacuum lines 122, 124. The vacuum generated by the vacuum pump 120 is transferred to the suction hole 116 through the vacuum lines 122 and 124.

The measuring unit measures the overall flatness of the reticle adsorbed on the vacuum chucks 112 and 114. In this embodiment, the measurement unit can include pressure sensors disposed on the scanner 136 and the vacuum lines 122, 124. The scanner 136 is disposed on top of the vacuum chucks 112 and 114 to scan the front surface of the reticle. The pressure sensors 132 and 134 measure the pressure of the vacuum flowing through the vacuum lines 122 and 124 to confirm whether the reticle is flat.

For example, if the pressure measured at the left pressure sensor 132 is greater than the pressure measured at the right pressure sensor 134, it is provided through the right vacuum line 124 rather than the vacuum provided through the left vacuum line 122. This means that the vacuum is stronger. Thus, it is confirmed that the right side of the reticle abuts on the upper surface of the right vacuum chuck 114 is inclined downward more than the left side of the reticle abuts on the upper surface of the left vacuum chuck 112.

In this embodiment, the flatness of the reticle is measured in the state where the reticle is adsorbed to the horizontally arranged vacuum chucks 112 and 114. Accordingly, the flatness result of the reticle measured in the measuring unit includes various factors such as the attraction force and gravity of the vacuum chucks 112 and 114 applied to the reticle. Therefore, the flatness of the reticle measured in the measuring unit has improved reliability.

Pressure valves 142 and 144 are disposed in vacuum lines 122 and 124, respectively, to control the vacuum.

The controller 150 stores data relating to the flatness of the reticle measured in the measuring unit. In addition, the controller 150 transmits the stored data to the semiconductor exposure equipment. Based on the transmitted data, the semiconductor exposure equipment can accurately correct the flatness of the reticle used for actual film formation.

According to this embodiment, the flatness of the front surface of the reticle can be measured by scanning the front surface of the reticle. Thus, the measured flatness accurately reflects the actual tilt of the reticle. Such data can be transmitted to the exposure equipment and used for focusing the exposure equipment.

How to measure flatness of the reticle

3 is a flowchart sequentially illustrating a method of measuring flatness of a reticle using the apparatus of FIG. 1.

1 and 3, in step ST210, the reticle is placed on the vacuum chucks 112 and 114. In this embodiment, since the vacuum chucks 112 and 114 are arranged along a direction substantially perpendicular to the direction of gravity, the reticle is also disposed along a direction substantially perpendicular to the direction of gravity.

In step ST220, a vacuum is applied from the vacuum pump 120 to the reticle via the vacuum lines 122, 124 and the adsorption holes 116. Therefore, the left and right lower surfaces of the reticle are firmly adsorbed to the upper surfaces of the vacuum chucks 112 and 114. The pressure sensors 132, 134 measure the pressure of the vacuum flowing through the vacuum lines 122, 124.

In step ST230, the scanner 136 scans the front surface of the reticle adsorbed on the vacuum chucks 112 and 114 to measure the flatness of the front surface of the reticle. The flatness data of the measured reticle is stored in the controller 150.

In the measured data, if the pressure measured at the left pressure sensor 132 is greater than the pressure measured at the right pressure sensor 134, it is through the right vacuum line 124 than the vacuum provided through the left vacuum line 122. This means that the vacuum provided is stronger. Thus, it is confirmed that the right side of the reticle abuts on the upper surface of the right vacuum chuck 114 is inclined downward more than the left side of the reticle abuts on the upper surface of the left vacuum chuck 112.

In this embodiment, the flatness of the reticle is measured in the state where the reticle is adsorbed to the horizontally arranged vacuum chucks 112 and 114. Accordingly, the flatness result of the reticle measured in the measuring unit includes various factors such as the attraction force and gravity of the vacuum chucks 112 and 114 applied to the reticle. Therefore, the flatness of the reticle measured in the measuring unit has improved reliability.

In step ST240, the controller 150 transmits the stored data to the semiconductor exposure equipment. The semiconductor exposure equipment accurately corrects the flatness of the reticle based on the received data.

As described above, according to a preferred embodiment of the present invention, the total flatness of the reticle is measured in consideration of gravity, adsorption force, etc. applied to the reticle while the reticle is adsorbed to the vacuum chuck. Therefore, the overall flatness of the measured reticle can accurately represent the degree to which the reticle is actually inclined. As a result, since the flatness of the reticle is corrected by the semiconductor exposure equipment on the basis of the accurately measured flatness, the pattern of the reticle can be accurately transferred to the film.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims. It can be understood that it is possible.

112, 114; Vacuum chuck 120; Vacuum pump
122, 124; Vacuum lines 132, 134; Pressure sensor
142, 144; Pressure valve 150; controller

Claims (10)

Adsorbing the reticle by providing a vacuum from the vacuum chuck of the flatness measuring device to the reticle; And
And measuring the flatness of the reticle by scanning the entire reticle. The method of claim 1 wherein the step of adsorbing the reticle
Placing the reticle horizontally on the vacuum chuck disposed perpendicular to the direction of gravity; And
And providing the vacuum from the vacuum chuck to the reticle. The method of claim 1, wherein measuring the flatness of the reticle
Measuring the local pressures of the vacuum applied to the reticle. 4. The method of claim 3, wherein measuring flatness of the reticle
And measuring the gravity applied to the reticle. The method of claim 1, further comprising transmitting the measured flatness of the reticle to a semiconductor exposure apparatus. A vacuum chuck providing a vacuum to the reticle to adsorb the reticle;
A measuring unit measuring an overall flatness of the reticle; And
And a controller for storing data relating to the flatness of the reticle measured by the measuring unit and transmitting the data to the semiconductor exposure equipment. 7. The flatness measuring apparatus of claim 6, wherein the vacuum chuck is disposed to be orthogonal to the direction of gravity. 7. The reticle stage of claim 6 wherein the vacuum chuck has a plurality of adsorption holes for providing various vacuums to the reticle. 7. The flatness measuring apparatus of claim 6, wherein the measuring unit comprises a scanner for scanning the front surface of the reticle. 7. The flatness measuring apparatus of claim 6, wherein the measuring unit comprises a pressure sensor measuring local pressures of the vacuum applied to the reticle.
KR1020110063521A 2011-06-29 2011-06-29 Method of measuring flatness of a reticle and apparatus for performing the same KR20130007088A (en)

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KR1020110063521A KR20130007088A (en) 2011-06-29 2011-06-29 Method of measuring flatness of a reticle and apparatus for performing the same

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10871369B2 (en) 2018-08-02 2020-12-22 Corning Incorporated Systems for and methods of measuring photomask flatness with reduced gravity-induced error

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10871369B2 (en) 2018-08-02 2020-12-22 Corning Incorporated Systems for and methods of measuring photomask flatness with reduced gravity-induced error

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