KR20130006136A - Rapid heating apparatus - Google Patents

Rapid heating apparatus Download PDF

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Publication number
KR20130006136A
KR20130006136A KR1020110068000A KR20110068000A KR20130006136A KR 20130006136 A KR20130006136 A KR 20130006136A KR 1020110068000 A KR1020110068000 A KR 1020110068000A KR 20110068000 A KR20110068000 A KR 20110068000A KR 20130006136 A KR20130006136 A KR 20130006136A
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KR
South Korea
Prior art keywords
transparent conductive
tube
heating
radiating element
etching
Prior art date
Application number
KR1020110068000A
Other languages
Korean (ko)
Inventor
권종수
강근수
주금노
Original Assignee
권종수
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 권종수 filed Critical 권종수
Priority to KR1020110068000A priority Critical patent/KR20130006136A/en
Publication of KR20130006136A publication Critical patent/KR20130006136A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Abstract

PURPOSE: A rapid heating device is provided to reduce heating time by arranging a heating device along a supply line which supplies an etchant to an etching unit to rapidly heat the etchant. CONSTITUTION: An etchant chamber(112) receives an etchant. A first etching unit(130a), a second etching unit(130b), and a third etching unit(130c) etch a wafer. A supply line(114) is connected to the first to third etching units in the etchant chamber. An etchant supply pump(119) pumps the etchant from the etchant chamber to the first to third etching units. A heating unit(116,118) maintains the temperature of the etchant supplied from the first to third etching units with a preset temperature. [Reference numerals] (112) Etchant chamber; (130a) First etching unit; (130b) Second etching unit; (130c) Third etching unit

Description

Rapid heating device {RAPID HEATING APPARATUS}

The present invention relates to a rapid heating apparatus, and more particularly, to a rapid heating apparatus capable of rapidly heating a predetermined liquid supplied through a supply line to a predetermined desired temperature.

It is very important to rapidly heat a given liquid to a desired desired temperature.

In particular, when the semiconductor industry is described as an example, a liquid such as phosphoric acid at a predetermined temperature is generally used to etch away a silicon nitride film (SiN film) deposited on a semiconductor substrate, and is used after a predetermined etching operation. Pure water at a predetermined temperature is used to remove the liquid, such as phosphoric acid, without contamination.

If it is not possible to quickly provide the temperature of the treatment liquid or the pure water at such a temperature in this operation, the result may not be properly processed or contamination may occur.

Of course, heating a predetermined liquid to a predetermined temperature in this way is not limited to the semiconductor industry.

Generally, in order to heat a predetermined liquid to a predetermined temperature, a discharge vessel and a supply tube are connected to a predetermined tank containing the predetermined liquid, and these tubes are connected to a circulation system consisting of a pump, a filter, a heater and the like.

Therefore, in a factory or the like which requires a predetermined liquid at a predetermined temperature, a predetermined tank is arranged in the center of the working space, and the working table is provided on a wall surface having a supply line at a distance closest to the predetermined tank.

This structure requires a large working space and wastes in space and heat efficiency because a circulation system that requires unnecessarily large amounts of heat must be used even in the case of using various small amounts of liquid, such as semiconductor equipment. Doing.

It is an object of the present invention to quickly raise a predetermined processing liquid to a predetermined temperature, and does not have to have a tank containing the processing liquid and a circulation system for heating it, and can be installed on the wall slim and has good energy efficiency. It is to provide a rapid heating device.

In order to achieve this object, in the heating apparatus for rapidly heating the miso of liquid to a predetermined temperature, it is disposed outside of the transparent conductive tube and the transparent conductive tube having an inside through which the liquid flows and an outside through which light and heat are conducted and transmitted. It may include a heating radiating element for generating light and heat to rapidly heat the liquid inside the transparent conductive tube to a predetermined temperature.

The transparent conductive tube may be made of quartz.

A reflective tube is formed to surround the transparent conductive tube and the heating radiating element, and a reflecting film is formed on an inner side thereof to reflect heat and light emitted from the heating radiating element into the transparent conductive tube to improve heating efficiency of the liquid inside the transparent conductive tube. It may include.

The reflective film may be a gold film.

The heating radiating element may be an IR element.

The transparent conductive tube and the reflective tube is a cylindrical hollow tube, the transparent conductive tube is disposed in the reflecting tube in a zigzag form, it may have a heat insulating material for maintaining at a predetermined temperature outside the reflecting tube.

Further comprising a temperature sensor for sensing the temperature of the liquid flowing through the transparent conductive tube, the control unit for controlling the magnitude of the electrical energy applied to the heating radiating element in accordance with the temperature detected by the temperature sensor Can be.

The heating radiating element may be spirally wound around the outer circumferential surface of the transparent conductive tube.

The heating radiating element may be disposed in a straight line on the outer circumferential surface thereof in the longitudinal direction of the transparent conductive tube, and a plurality of heating radiating elements may be disposed at predetermined intervals.

At least two transparent conductive pipes are arranged at a predetermined interval on a virtual plane, the both ends are connected in a U-shape, the transparent conductive pipe further comprises a tube case disposed therein, The heating radiating element and the reflective light tube may be disposed outside.

As described above, according to the etching apparatus according to the present invention, a heating apparatus is disposed along a supply line for supplying the etching liquid from the etching chamber to the etching portion, thereby rapidly heating the etching liquid and improving the thermal insulation effect.

Here, the heating apparatus can quickly heat the etching liquid by using a transparent transparent conductive pipe through which the etching liquid flows and a heating radiating element that is attached to the outer surface thereof to generate light and heat.

In addition, the transparent conductive tube and the reflective tube into which the heating radiating element is inserted are used to reflect heat and light generated from the heating radiating element into the etching liquid flowing through the transparent conductive tube, thereby increasing heating efficiency and shortening the heating time. Can save the electrical energy required for heating.

1 is a schematic configuration diagram of an etching apparatus according to an embodiment of the present invention.
2 is a schematic configuration diagram of a rapid heating apparatus of an etching apparatus according to an embodiment of the present invention.
3 is a side cross-sectional view of a rapid heating apparatus of an etching apparatus according to an embodiment of the present invention.
4 is a cutaway perspective view of a rapid heating apparatus of an etching apparatus according to an embodiment of the present invention.
5 is a schematic configuration diagram of a rapid heating apparatus of an etching apparatus according to an embodiment of the present invention.
6 is a cutaway perspective view of a rapid heating apparatus of an etching apparatus according to another embodiment of the present invention.
7 is a cutaway perspective view of a rapid heating apparatus of an etching apparatus according to still another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic configuration diagram of an etching apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the etching apparatus 100 includes a etching solution supply unit 110, an etching solution temperature adjusting unit 120, an etching unit 130, a cleaning unit 140, and a drying unit 150. The etchant supply unit 110 includes an etchant chamber 112, a supply line 114, and a supply pump 119.

The etchant temperature control unit 120 is to adjust the temperature of the etchant supplied through the supply line 114, the temperature sensing unit 410 for detecting the temperature of the etchant, to a temperature set according to the detected temperature It is configured to include a controller (not shown) for raising the temperature.

The wafer etched by the etching unit 130 is provided to the etching unit 130 by a loading portion in a state of being loaded on a carrier in the size of several tens of sheets.

When the operation is started by the etching program used, the wafer is transferred to the etching unit 130 by the robot of the transfer system. The wafer is placed in a carrier or mounted on a lifter and then provided to an etching bath of the etching unit 130.

After the etching is completed, the wafer is transferred to the cleaning unit 140 and cleaned by deionized water. The wafer thus cleaned is transferred to the drying unit 150 and dried by a spin drying method, and the wafer after drying is ejected by a separate unloading portion.

2 is a schematic configuration diagram of a rapid heating apparatus of an etching apparatus according to an embodiment of the present invention.

Referring to FIG. 2, the etching apparatus includes an etchant chamber 112 containing an etchant, a first etching unit 130a for etching a wafer, a second etching unit 130b, and a third etching unit 130c, and the etching solution chamber. A supply line 114 connected to the first, second, and third etching parts 130a, 130b, and 130c at 112, and one side of the supply line 114, the first in the etchant chamber 112; And an etching solution supply pump 119 for pumping the etching solution to the second and third etching portions 130a, 130b, and 130c.

In addition, the heating element 118 and the heating line 116 are provided in the etching chamber 112 and the supply line 114 as heating means for heating the etching solution.

The heating means 118 and 116 maintain the temperature of the etchant supplied to the first, second and third etching portions 130a, 130b and 130c at a set temperature, and the heating element 118 is the etchant chamber 112 Installed inside, the etching liquid contained therein is heated, and the heating line 116 is installed along the supply line 114 to heat the etching liquid flowing through the inside quickly and precisely.

Figure 3 is a cross-sectional view of one side of the rapid heating apparatus of the etching apparatus according to an embodiment of the present invention, Figure 4 is a perspective view of the rapid heating apparatus of the etching apparatus according to an embodiment of the present invention.

3 and 4, a transparent conductive tube 210 having a circular tube structure is disposed at the center of the supply line 114, and an etching solution 200 flows inside the supply line 114.

On the outer circumferential surface of the transparent conductive tube 210, a heating radiating element 220 is disposed at a predetermined interval, and a reflective tube 230 is disposed at a predetermined gap with the transparent conductive tube 210, and the reflective tube 230 of The heating radiating element 220 is interposed between an inner circumferential surface and an outer circumferential surface of the transparent conductive tube 210.

In addition, the outer surface of the reflective tube 230 is mounted with a heat insulating material 240 of a set thickness, the heat insulating material 240 may be composed of styrofoam, glass fiber, foamed resin and the like, the outer surface of the heat insulating material 240 A separate cover may be arranged.

In addition, in order to sense the temperature of the etchant flowing through the inside of the transparent conductive pipe 210, the temperature detecting sensor 310 may be disposed adjacent to or penetrate the transparent conductive pipe 210. The temperature sensor 310 transmits an electrical signal related to the temperature of the etchant to the etchant temperature control unit 120.

In more detail, the transparent conductive pipe 210 may be made of a material such as quartz that transmits heat and light and is not corroded by an etchant, but includes a material that is transparent and easily transfers heat. There is no special limitation.

In addition, the heating radiating element 220 is a means for generating light or heat by using the supplied electrical energy, the light or heat generated here flows through the transparent conductive tube 210 through the transparent conductive tube 210 The etching solution is heated.

In the structure in which the transparent conductive tube 210 is inserted into the reflecting tube 230, a reflecting plate reflecting light and heat is formed on an inner circumferential surface of the reflecting tube 230. Light and heat generated by 220 are reflected in the etching solution direction, thereby improving thermal efficiency.

In an embodiment of the present invention, the reflective plate formed on the inner circumferential surface of the reflective tube may be formed of a thin film coated with a material such as silver (Ag), aluminum (Al), or copper (Cu).

In addition, due to the heat insulating material 240 surrounding the outer side of the reflective tube 230, the energy inside the reflective tube 230 is drawn out to the outside or the temperature of the etching solution inside the transparent conductive tube 210 is easily maintained.

5 is a schematic configuration diagram of a rapid heating apparatus of an etching apparatus according to an embodiment of the present invention.

Referring to FIG. 5, the controller 400 of the etching apparatus is electrically connected to the supply pump 119, the heating radiating element 220, the temperature sensing sensor 310, the power unit 420, and the temperature input unit 430. Is connected.

When the desired temperature of the etchant is input to the temperature input unit 430, the temperature sensor 310 senses the current temperature of the etchant. The temperature of the etching solution is increased by supplying electricity to the heating radiating element 220 according to a temperature between the temperature detected by the temperature sensor 310 and the desired temperature.

When the temperature of the etching solution reaches the input temperature, the supply pump 119 is operated to supply the etching solution to the first, second and third etching parts 130a, 130b and 130c.

6 is a cutaway perspective view of a rapid heating apparatus of an etching apparatus according to another embodiment of the present invention.

Referring to FIG. 6, the heating radiating element 220 is wound spirally in the longitudinal direction of the outer circumferential surface of the transparent conductive tube 210. By the structure as described above, the heating effect of the etching solution flowing through the transparent conductive tube 210 is improved.

In FIGS. 3 and 4, the heating radiating element 220 is provided on the outer surface of the transparent conductive tube 210 in the longitudinal straight wire type, and is composed of five heating radiating elements 220. In 6, one heating radiating element 220 is wound around the transparent conductive tube 210.

3 and 4, when a plurality of the heating radiating element is provided, even if one heating radiating element 220 is not operated, the remaining four heating radiating element 220 is operated to ensure overall stability Can be improved.

7 is a cutaway perspective view of a rapid heating apparatus of an etching apparatus according to still another embodiment of the present invention.

Referring to FIG. 7, at least two upper transparent conductive pipes 700 are arranged at an interval set in a downward direction on an imaginary plane formed from top to bottom, and end portions thereof are connected in a U shape.

That is, the transparent conductive pipe 700 is disposed in a zigzag form from the top to the bottom direction. The transparent conductive tube 700 has a capillary shape whose diameter reaches several millimeters.

A tube case 710 is disposed to surround the entire transparent conductive tube 700, and a plurality of heating radiating elements 720 are disposed outside the tube case 710. IR (infra red) and heat generated from the heating radiating element 720 is transmitted through the tube case 710 and the transparent conductive tube 700 to heat the etch liquid flowing through the transparent conductive tube 700.

A reflecting light tube 730 is disposed to surround the tube case 710 and the entire heating radiating element 720, and an infrared ray and heat generated from the heating radiating element 720 are formed on an inner surface of the reflecting light tube 730. A reflective film for reflecting the light is formed. In an embodiment of the present invention, the reflective film formed on the inner surface of the reflective light tube 730 may include a gold or silver material.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, And all changes to the scope that are deemed to be valid.

100: etching apparatus
110: etching solution supply unit
120: etching solution temperature control unit
130: etching unit
140: cleaning unit
150: drying unit
112: etching liquid chamber
114: supply line
116: heating line
118: heating element
119: supply pump
130a: first etching portion
130b: second etching unit
130c: third etching portion
200: etching solution
210: transparent conductive tube
220: heating radiating element
230: reflective tube
240: insulation
310: temperature sensor
400:
410: temperature sensor
420: power unit
430: temperature input unit

Claims (10)

In the heating apparatus for rapidly heating the miso of the liquid to a predetermined temperature,
A transparent conductive tube having an inside through which liquid flows and an outside through which light and heat are conducted and transmitted; And
A heating radiating element disposed outside the transparent conductive tube to generate light and heat to rapidly heat the liquid inside the transparent conductive tube to a predetermined temperature; Rapid heating apparatus comprising a. The method of claim 1,
The transparent conductive pipe is a rapid heating device made of quartz. The method of claim 2,
A reflective tube is formed to surround the transparent conductive tube and the heating radiating element, and a reflecting film is formed on an inner side thereof to reflect heat and light emitted from the heating radiating element into the transparent conductive tube to improve heating efficiency of the liquid inside the transparent conductive tube. Rapid heating apparatus comprising a. The method of claim 2,
The reflective film is a rapid heating device, characterized in that the gold film. The method of claim 4, wherein
The heating radiating element is a rapid heating device, characterized in that the IR element. The method of claim 4, wherein
The transparent conductive tube and the reflecting tube is a cylindrical hollow tube, the transparent conductive tube is disposed in the zigzag form in the reflecting tube, a rapid heating apparatus characterized in that it has a heat insulating material for maintaining at a predetermined temperature outside the reflecting tube. The method of claim 4, wherein
A temperature sensor for sensing a temperature of the liquid flowing in the transparent conductive tube; Further comprising:
A controller for controlling the magnitude of the electric energy applied to the heating radiating element according to the temperature sensed by the temperature detecting sensor; Rapid heating apparatus comprising a further. The method of claim 1,
The heating radiating element is a rapid heating apparatus, characterized in that the spiral wound around the outer peripheral surface of the transparent conductive tube. The method of claim 1,
The heating radiating element is disposed in a straight line on the outer circumferential surface in the longitudinal direction of the transparent conductive tube, a rapid heating device characterized in that a plurality of arranged at a set interval. The method of claim 1,
At least two transparent conductive tubes are arranged at a predetermined interval on a virtual plane, and both ends thereof are connected in a U shape.
The transparent conductive pipes further includes a tube case disposed therein,
Rapid heating device, characterized in that the heating radiating element and the reflective light tube is disposed outside the tube case.
KR1020110068000A 2011-07-08 2011-07-08 Rapid heating apparatus KR20130006136A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110068000A KR20130006136A (en) 2011-07-08 2011-07-08 Rapid heating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110068000A KR20130006136A (en) 2011-07-08 2011-07-08 Rapid heating apparatus

Publications (1)

Publication Number Publication Date
KR20130006136A true KR20130006136A (en) 2013-01-16

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110068000A KR20130006136A (en) 2011-07-08 2011-07-08 Rapid heating apparatus

Country Status (1)

Country Link
KR (1) KR20130006136A (en)

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