KR20120139338A - Bipolar junction light emitting diode for improving brightness and electric current injection - Google Patents
Bipolar junction light emitting diode for improving brightness and electric current injection Download PDFInfo
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- KR20120139338A KR20120139338A KR1020110059084A KR20110059084A KR20120139338A KR 20120139338 A KR20120139338 A KR 20120139338A KR 1020110059084 A KR1020110059084 A KR 1020110059084A KR 20110059084 A KR20110059084 A KR 20110059084A KR 20120139338 A KR20120139338 A KR 20120139338A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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Abstract
The invention consists of a structure of a bipolar junction of NPN type or PNP type
Type of peninsula with different polarities in the same area as conventional LEDs
Sieves are vertically superimposed so that two or more electrodes are present to
The amount of current is increased more than the amount of current, and the active layer is laminated between the semiconductors.
As a result, an operating region can be formed to increase the amount of current of the light emitting diode.
Short the electrodes or apply a different voltage to each electrode to adjust the magnitude of the current.
The present invention relates to a bipolar junction light emitting diode that can be controlled.
Description
The present invention relates to a bipolar junction light emitting diode, and more particularly,
N-P-N type or P-N-P type bipolar junction structure
Light Emitting Diodes (LEDs), hereinafter also called LEDs
Vertical or different N type or P type semiconductors in the same area
The present invention relates to a light emitting diode that can improve the current injection effect and effectively increase the luminous efficiency by bonding three or more layers horizontally.
Recently, as interest in light emitting diodes has been amplified in relation to eco-friendly technology,
Research into the efficiency and brightness of photodiodes is being actively conducted.
Currently widely used light emitting diodes have a structure of P-N junction
have. Figure 1 shows the structure of the basic P-N junction, the black circle is
The white circle represents a hole. As shown in Figure 1, a basic P-N junction
The principle is that when a P-type semiconductor and an N-type semiconductor are bonded, they diffuse in each region.
By holes in the P-type semiconductor and electrons in the N-type semiconductor
It is implanted and subsequently produces a depletion region.
The basic principle of luminescence is to act as a multiple carrier in N-type semiconductors.
As electrons are injected into regions within the P-type semiconductor, they change to the minority carrier role,
Holes, called majority carriers, in P-type semiconductors dominate the area of N-type semiconductors.
The same phenomenon occurs with the current flowing. Electrons and electrons in the depletion region
It is extinguished by the recombination of the ball, and the energy corresponding to the recombination is converted into light.
And emit light.
In addition, a little more recent development in light-emitting diodes having a basic structure of the P-N type
A light emitting diode having a structure is shown in FIG. 2 in order to increase luminous efficiency.
As can be seen, quantum wells and quantum barrier layers are alternately stacked with different materials
An active layer having a structure of quantum wells is formed, and electrons and
The light emission phenomenon is caused by recombination of holes.
Recently, the quantum well and the quantum barrier layer are stacked in the form of multiple quantum
Has a structure of a multiple quantum well (MQW, hereinafter referred to as MQW),
The MQW layer is trapped with electrons and holes to be recombined to form an active layer.
As the operation area is made. However, conventional semiconductors having such a structure (P-N)
Or LEDs manufactured by stacking multiple quantum wells between N-P)
It is still insufficient in terms of luminous efficiency for indoor lighting.
LED is currently used in the display area of mobile phones or TVs.
Light Unit; BLU), but the rapid development of LED technology in the near future
We are trying to develop and apply lighting LED. To apply LED to lighting applications
Intensity and high efficiency of light similar to or brighter than conventional fluorescent or tri-wavelength lighting
You must have a rate. To solve this problem, many companies and research institute
We're trying a variety of ways to improve it, and there are many
Current research on the current injection of the method is also active.
An object of the present invention is to provide a general LED having a double junction structure of N-P type.
In order to improve the current injection efficiency of semiconductor substrate, N-P-N type or P-N-P type
By fabricating the substrate with a mesojunction structure, it increases the current injection efficiency and improves the brightness of the LED.
It is to provide a bipolar junction light emitting diode.
The present invention includes a structure of a light emitting diode of the N-P-N type or P-N-P type,
Vertical or horizontal junction spheres in which the P and N type semiconductors are repeated three or more times
Provided is a bipolar junction light emitting diode having a jaw.
Figure 7 shows a band diagram of the light emitting diode of the N-P-N junction
As shown in FIG. 1, the P-N junction structure shown in FIG. 1 was converted to an N-P-N junction.
All. As shown in FIG. 7, the bipolar junction light emitting diode has two depletion regions.
And a structure that can have two or more electrodes.
The light emitting diode according to the present invention is a flip chip type or a vertical chip.
(vertical chip) A structure that can be applied to light emitting diodes such as semiconductors.
Or it can be bonded horizontally so that other polarities with the same area as the existing light emitting diode
By stacking the semiconductor of the mouth several times vertically or horizontally, the injection of current is improved.
All.
In the light emitting diode according to the present invention, the N-type semiconductor and the P-type semiconductor are N-P-N type.
It is stacked as a mouth or P-N-P type, referring to Figure 4 N-type on the substrate
Deposit a semiconductor, deposit a P-type semiconductor thereon, and then again apply an N-type semiconductor.
The substrate is formed in a layered structure, and the P-type and N-type are formed in the opposite structure.
It is possible.
The substrate is not particularly limited in kind, and as a specific example, a sapphire substrate is
According to the shape, a substrate made of Si, SiC, GaN, ZnO, MgAl 2 O 4, LiAlO 2, LiGaO 2, etc. may be used, and further, a buffer layer may be grown to improve crystal quality of semiconductor single crystals grown on the substrate. You can also use this buffer layer
It may be omitted depending on the characteristics of the device and the process conditions.
An N-type semiconductor or a P-type semiconductor is formed on the buffer layer. Prize
The material of the conventional P-type semiconductor and the N-type semiconductor is not particularly limited to the kind thereof.
For example, GaAs, GaP, InAs, InP, AlAs, AlSb, AlP, GaSb, InSb, GaN, InN, AnN,
Can be used one or more from the group consisting of ZnO, SiC, Si, InGaN and C, etc.
In addition to the above materials, a luminescent organic polymer or an inorganic ceramic may be used.
The N-type semiconductor or the P-type semiconductor may be a single layer, but
It is not limited but may be multilayer.
Si, Ge, Se, Te, etc. may be used as impurities of the N-type semiconductor,
As the impurity of the P-type semiconductor, Mg, Zn, Be and the like are representative. N-type and P-
The method for growing a semiconductor layer of the type is, organometallic vapor deposition known in the art
Growth (MOCVD), molecular beam growth (MBE), hybrid vapor deposition (HVPE) processes, etc.
.
The light emitting diode according to the present invention is provided between an N-type and a P-type semiconductor stacked.
The active layer may be further deposited, wherein the active layer alternates between the quantum well and the quantum barrier layer.
The stacked quantum well structure can be formed. Charge in the quantum well layer
In order to increase the confinement efficiency that is gathered, the active layer has a plurality of quantum
Multiple quantum wells in which a well layer and a plurality of quantum barrier layers are alternately stacked
quantum wells; NW-type and P-type peninsula
The active layer formed between the body layers has a predetermined energy by recombination of electrons and holes.
It is to emit light.
Thus, the active layer moves electrons in each N-type and P-type semiconductor
Is an operating region that traps holes and recombines to form recombination.
As the layer is located between the respective semiconductors, as shown in FIG. 8, the N-P-N
In the case of a light emitting diode of the type, electrons which are the majority carriers in both N-type semiconductors
Flows in both directions to the operating region in the P-type semiconductor direction, increasing the amount of current
In the case of the P-N-P type light emitting diode, the N-type is located at the center.
Both directions of a P-type semiconductor in which many electrons in the semiconductor are located on both sides
It can be injected into the operating region present in the to increase the magnitude of the current.
The quantum well layer and the quantum barrier layer are not particularly limited in kind, respectively.
For example, GaAs, GaP, InAs, InP, AlAs, AlSb, AlP, GaSb, InSb, GaN, InN, AnN, ZnO,
ZnSe, ZnCdSe, SiC, Si, InGaN, AlGaInN, AlGaInP, AlN, BN (boron nitride), GaAsP,
1 or more types can be used from the group which consists of AlGaAs, AlGaN, C (diamond), etc.
Also, in addition to the above materials, it is possible to use a luminescent organic polymer or an inorganic ceramic.
The quantum well layer and the quantum barrier layer may each be a single layer,
The present invention is not limited thereto and may be a multilayer.
In addition, the quantum well layer and the quantum barrier layer, respectively, the difference in the band gap of the material used
The band gap varies according to the element content ratio of each material.
.
The number of quantum well layers and quantum barrier layers for implementing the multi-quantum well structure is designed
Various changes may be made depending on the needs of the award, which is based on the disclosure of the present invention.
If so, it can be easily selected by those skilled in the art.
The quantum barrier layer may include a relatively thicker quantum barrier layer, a quantum barrier layer having a wider band gap, or a quantum barrier layer doped with p-type impurities.
In addition, the light emitting diode according to the present invention is characterized in that each of the N-type and P-type semiconductors
You can further insert an undoped layer or insulating film inside the junction, which is active
Can be used as an area.
In addition, the N-P-N type light emitting diode is a GaN epitaxial grown with N-face.
In the epitaxial layer, the N-type semiconductor is more etched than the P-type semiconductor.
As it is advantageous, it is much more advantageous for giving surface irregularities to increase luminous effect
Has a point.
The manufacturing method of LED which concerns on this invention is not specifically limited, For example, General
It is the same as the manufacturing method of LED having phosphorus N-P type semiconductor, which is a known method,
The manufacturing method of the group is not particularly limited in its kind, for example, chemical vapor deposition,
Atomic beam deposition, electro or electroless plating, sputtering, evaporation, brush
Gel coating methods (spin coating, dipping, spraying, painting, etc.) and laser stripping
ablation).
According to the present invention, a light emitting diode having a structure of N-P-N type or P-N-P type
Three or more semiconductors in the same area as the conventional LED
It has the effect of improving the brightness of light by increasing the amount of current supplied to the semiconductor is bonded to the.
1 is a view showing the light emission principle of a basic LED.
2 is a view showing the principle of a heterojunction light emitting diode having an active layer deposited thereon;
to be.
3 is a diagram showing a horizontal structure of a commercially available LED.
4 is a view showing the structure of an LED according to the present invention.
5 is a view showing a process for manufacturing an LED according to the present invention.
Figure 6 shows an active layer according to the present invention, the quantum well layer and the quantum barrier
It is a figure which shows that layers were alternately laminated.
7 is a band diagram of a state in which no voltage is applied to the LED according to the present invention.
It is a figure which shows.
Figure 8 is a band of the voltage applied to the anode and cathode of the LED according to the present invention
The following diagram shows that the current can be injected in both directions.
Hereinafter, with reference to the accompanying drawings, a spitting embodiment of the present invention will be described.
3 is a diagram showing a basic horizontal LED guzol.
Referring to Figure 3, the basic form of the LED currently being commercialized N- on the substrate
A type semiconductor was stacked, and a P-type semiconductor was stacked thereon, and an N-type semiconductor
It is composed of a structure for depositing an active layer between the P-type semiconductor.
4 is a view showing an LED structure which is an embodiment of the present invention.
Referring to FIG. 4, the LED structure, which is an embodiment of the present invention, is basically N-P-N.
Type structure, and the active layer is intermediate P-ta, as shown in FIG.
It can be deposited on or under the mouth semiconductor, and vice versa.
The method of manufacturing the LED of the embodiment of Figure 4 is a known method,
Same as the method of configuring a P-N type LED, the specific method is shown in detail in FIG.
Burned out.
5 is a schematic of a preferred embodiment of a light emitting diode according to the invention.
It is a figure which shows a structure.
5, the light emitting diode according to the present invention is a substrate, an N-type semiconductor layer,
An active layer, a P-type semiconductor layer, an active layer, and an N-type semiconductor layer are provided.
The substrate is made of sapphire or GaN. Although not shown in the drawings,
The buffer layer may be formed on a substrate, and generally when the substrate is made of sapphire
It is formed on the right side. The buffer layer is generated from the lattice constant difference between the N-type semiconductor and the substrate.
To mitigate lattice mismatch and allow the growth of N-type semiconductors with good crystallinity
. For this purpose, the buffer layer may be made of GaN, AlN or InGaN,
There is no restriction | limiting in particular when laminating | stacking a buffer layer, For example, a buffer layer / undoped
The semiconductor substrates are stacked in the order of the undoped GaN / N-type semiconductor.
After depositing an undoped GaN and then an N-type semiconductor on the buffer layer,
Since the N-type semiconductor layer is a layer on which an N-electrode is formed, an N-type such as Si or Ge
Dop the impurities. Subsequently, an InGaN quantum well layer and a GaN quantum field are formed on an N-type semiconductor.
Wall layers are alternately stacked 20 times, the thickness of the InGaN quantum well layer is 1 ~ 3nm,
The GaN quantum barrier layer has a thickness of 7 to 30 nm to deposit an active layer. after that,
A P-type semiconductor is stacked on the active layer and doped with Mg, which is an impurity thereon. this
Then, an InGaN quantum well layer on the P-type semiconductor to a thickness of 1 ~ 3nm, GaN quantum barrier
The quantum well layer and the quantum barrier layer were alternately stacked 20 times with a layer thickness of 7 to 30 nm.
All. Then, again depositing an N-type semiconductor on the active layer, N-type impurities
Doped Si or Ge to form an epitaxial layer of a bipolar junction LED having an N-P-N structure.
. Then apply photoresist, and then save the photoresist on a hot plate.
Soft baking is carried out. Then, the optical exposure such as energy radiation-UV
After evaporating to dryness, the epitaxial layer is etched to the N-type semiconductor at the lowest end, and the remaining
The photoresist layer is removed. Next, each of the N-P type semiconductors located at the top
After etching, a cathode lift-off process is performed on each of the two N-type semiconductors.
The sword is lifted off and then anode metallized to P-type
By lifting off the anode on the semiconductor, three electrodes were prepared.
In addition, after stacking the N-P-N type semiconductor as shown in Figure 5, the P-type peninsula
The vertical position of the sieve in both directions, that is, the P-type semiconductor and the N-type semiconductor
In between, ions are implanted into the ion implanter, or gaseous or liquid dopant content
High temperature diffuser or rapid thermal treatment (RTA)
The annealing device may be hot diffused to form an active layer.
In addition, although not shown in the drawings of the present invention, the structure of FIG.
It can also have a structure of P-N-P type, and further comprises an active layer between each semiconductor
And a method of manufacturing a P-N-P type semiconductor can also be applied in the same manner as in FIG. 5.
have.
Bipolar junction light emitting diode according to an embodiment of the present invention is of the N-P-N type
It is laminated with light emitting diodes and P-N-P type light emitting diodes,
Three or more semiconductors vertically overlap the same area, resulting in three electrodes
The amount of current increases, and the active layer is further laminated on each semiconductor
An operating area is formed to increase the amount of current of the light emitting diode further.
Conventional horizontal light emitting diode by shorting the cathode or anode present on the sieve
Only two electrodes can be used, and when there are three or more electrodes,
Different voltages are applied to each cathode or anode on the semiconductor to control the amount of current
.
As described above, the description has been made with reference to a preferred embodiment of the present invention.
Those skilled in the art will appreciate that the present invention described in the claims below
Various modifications and variations of the present invention without departing from the spirit and scope
I can understand that it can be done.
101-Quantum Well Layer
102-quantum barrier layer
Claims (13)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110059084A KR20120139338A (en) | 2011-06-17 | 2011-06-17 | Bipolar junction light emitting diode for improving brightness and electric current injection |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110059084A KR20120139338A (en) | 2011-06-17 | 2011-06-17 | Bipolar junction light emitting diode for improving brightness and electric current injection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20120139338A true KR20120139338A (en) | 2012-12-27 |
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|---|---|---|---|
| KR1020110059084A KR20120139338A (en) | 2011-06-17 | 2011-06-17 | Bipolar junction light emitting diode for improving brightness and electric current injection |
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