KR20120138048A - Nitride based light emitting device with excellent light emitting efficiency and method of manufacturing the nitride based light emitting device - Google Patents

Nitride based light emitting device with excellent light emitting efficiency and method of manufacturing the nitride based light emitting device Download PDF

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KR20120138048A
KR20120138048A KR1020110057315A KR20110057315A KR20120138048A KR 20120138048 A KR20120138048 A KR 20120138048A KR 1020110057315 A KR1020110057315 A KR 1020110057315A KR 20110057315 A KR20110057315 A KR 20110057315A KR 20120138048 A KR20120138048 A KR 20120138048A
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South Korea
Prior art keywords
light emitting
nitride
emitting device
layer
based light
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KR1020110057315A
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Korean (ko)
Inventor
김선모
오충석
황세광
송호근
원준호
박지수
박건
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(주)세미머티리얼즈
박건
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Priority to KR1020110057315A priority Critical patent/KR20120138048A/en
Publication of KR20120138048A publication Critical patent/KR20120138048A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

PURPOSE: A nitride based light emitting device with excellent light emitting efficiency and a manufacturing method thereof are provided to disperse a movement route of a carrier by forming an active layer in the state an uneven portion is formed in a top surface of a first conductivity type nitride layer. CONSTITUTION: A first conductivity type nitride layer(220) is formed on a substrate. The first conductivity type nitride layer comprises an uneven portion. The uneven portion has a plurality of protrusion portions and main portions on a top surface. An active layer(230) is formed on the first conductivity type nitride layer. A second conductivity type nitride layer(240) is formed on the active layer. [Reference numerals] (201) Substrate; (210) Buffer layer; (230) Active layer

Description

Nitride-based light emitting device having excellent luminous efficiency and manufacturing method thereof {NITRIDE BASED LIGHT EMITTING DEVICE WITH EXCELLENT LIGHT EMITTING EFFICIENCY AND METHOD OF MANUFACTURING THE NITRIDE BASED LIGHT EMITTING DEVICE}

The present invention relates to a nitride-based light emitting device manufacturing technology.

The light emitting device is a device in which a light emitting phenomenon generated when recombination of electrons and holes is applied.

As a representative light emitting device, there is a nitride light emitting device represented by GaN. The nitride-based light emitting device has a large band gap energy and can implement various color lights. In addition, the nitride-based light emitting device is excellent in thermal stability.

The nitride-based light emitting device is classified into a horizontal type structure and a vertical type structure according to the arrangement of n-electrodes and p-electrodes. In the horizontal structure, the n-electrode and the p-electrode are mainly arranged in a top-top shape, and in the vertical structure, the n-electrode and the p-electrode are mainly arranged in a top-bottom shape.

1 schematically shows a structure of a nitride-based light emitting device having a general horizontal structure.

Referring to FIG. 1, a general horizontal nitride based light emitting device includes a buffer layer 110, an n-GaN 120, a light emitting active layer 130, and a p-GaN 140 based on a substrate 101. In addition, for driving the light emitting device, the n-electrode 150 is formed to contact the n-GaN 120, and the p-electrode 160 is formed to contact the p-GaN 140.

In the conventional nitride-based light emitting device, the light emitting area of the active layer 130 is not substantially wide. This may be caused by a variety of causes, one of which is that the carrier hardness, that is, the movement hardness of the electrons injected into the n-electrode 150 is not dispersed.

SUMMARY OF THE INVENTION An object of the present invention is to provide a nitride-based light emitting device having a structure in which a carrier's movement path is dispersed, so that light emission efficiency can be improved by increasing a light emitting area in an active layer.

Another object of the present invention is to provide a method of manufacturing a nitride-based light emitting device that can have a structure in which a carrier's movement path can be dispersed.

A nitride based light emitting device according to an embodiment of the present invention for achieving the above object is formed on the substrate, the first conductive nitride layer is formed on the top surface irregularities; An active layer formed on the first conductive nitride layer; And a second conductive nitride layer formed on the active layer, wherein the active layer is contacted with the first conductive nitride layer through a protrusion between the recessed and recessed portions of the unevenness to form the first conductive nitride layer. The carrier movement path to the active layer is dispersed.

At this time, the inside of the unevenness may remain as an air hole. In addition, the inside of the unevenness may be filled with an insulator. In addition, the inside of the unevenness may be filled with metal.

According to another aspect of the present invention, there is provided a nitride based light emitting device manufacturing method including: forming a first conductive nitride layer on a substrate; Etching the first conductive nitride layer in a predetermined pattern to form irregularities on an upper surface of the first conductive nitride layer; Forming an active layer on the first conductive nitride layer; And forming a second conductive nitride layer on the active layer.

In the method of manufacturing the nitride-based light emitting device according to the present invention, after forming the first conductive nitride layer, the active layer is formed in the state in which the unevenness is formed in the first conductive nitride layer through etching or the like. Therefore, the movement path of the carrier in the first conductive nitride layer can be dispersed, and the light emitting area in the active layer can be increased.

In addition, the method of manufacturing the nitride-based light emitting device according to the present invention may serve as a diffuse reflection layer by maintaining the inside of the irregularities formed on the upper surface of the first conductive nitride layer as an air hole.

In addition, in the method of manufacturing the nitride-based light emitting device according to the present invention, the durability of the nitride-based light emitting device may be improved by filling an insulator such as SiO 2 in the inside of the uneven surface formed on the upper surface of the first conductive nitride layer.

In addition, in the method of manufacturing the nitride-based light emitting device according to the present invention, the inside of the unevenness formed on the upper surface of the first conductive nitride layer may be filled with a metal such as aluminum to serve as a reflective layer.

1 illustrates a structure of a nitride based light emitting device having a general horizontal structure.
2 shows the structure of a nitride-based light emitting device according to an embodiment of the present invention.
3 shows the structure of a nitride-based light emitting device according to another embodiment of the present invention.
4 shows a method of manufacturing a nitride-based light emitting device according to an embodiment of the present invention.

Hereinafter, a nitride based light emitting device having excellent luminous efficiency and a method of manufacturing the same according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

2 illustrates a structure of a nitride based light emitting device according to an embodiment of the present invention, and more specifically, illustrates a GaN based light emitting device having a horizontal structure.

Referring to FIG. 2, the illustrated nitride-based light emitting device includes a first conductive nitride layer 220, an active layer 230, and a second conductive nitride layer 240. 2 illustrates an example in which the first conductive nitride layer 220 is formed of n-type GaN, and the second conductive nitride layer 240 is formed of p-type GaN, but is not limited thereto.

In addition, referring to FIG. 2, a buffer layer 210 formed of AlN, GaN, or the like may be further formed on the substrate 201 to improve crystal quality of each nitride layer such as the first conductive nitride layer 220. have. Although not shown in the figure, an undoped nitride layer may be further formed on the substrate 201 or the buffer layer 210 to improve crystal quality, improve low current operating characteristics, and the like.

The first conductive nitride layer 220 is formed by doping nitride with a first conductive impurity. The first conductive nitride layer 220 is in contact with the first electrode 250.

When the first conductive nitride layer 220 exhibits an n-type electrical characteristic in which a carrier is an electron, the first conductive impurity may be silicon (Si) or the like. In this case, the second conductive nitride layer 240 exhibits p-type electrical characteristics, and the second conductive impurity may be magnesium (Mg) or the like.

On the contrary, when the first conductive nitride layer 220 exhibits a p-type electrical property in which a carrier is a hole, the first conductive impurity may be magnesium (Mg) or the like. In this case, the second conductive nitride layer 240 exhibits n-type electrical characteristics, and the second conductive impurity may be silicon (Si) or the like.

The active layer 230 is formed on the first conductive nitride layer. The active layer 230 may have a multiple quantum well (MQW) structure. For example, a structure in which In x Ga 1-x N (0.1 ≦ x ≦ 0.3) and GaN are alternately stacked may be provided.

In the active layer 230, for example, electrons moving through the first conductive nitride layer 220 and holes moving through the second conductive nitride layer 240 are recombined to generate light, as illustrated in FIG. 2. Let's do it.

The second conductive nitride layer 240 is formed on the active layer 230. The second conductive nitride layer 240 is in contact with the second electrode 260.

Meanwhile, in the present invention, an uneven surface 225 having a plurality of recesses and protrusions is formed on the upper surface of the first conductive nitride layer 220. The unevenness may be formed by etching or the like after forming the first conductive nitride layer 220.

In this case, the active layer 230 is in contact with the first conductive nitride layer 220 through the protrusion between the recessed and recessed portions of the recessed and projected portion 225. Accordingly, the active layer 230 and the first conductive nitride layer 220 may be discontinuously contacted, and a carrier migration path from the first conductive nitride layer 220 to the active layer 230 may be dispersed.

As the carrier (electron in the example shown in FIG. 2) moves from the first conductive nitride layer 220 to the active layer 230 along various paths, the region where electrons and holes recombine in the active layer 230, that is, light emission You can increase the area. Therefore, the luminous efficiency to the outside of the light emitting element can be improved.

The inside of the unevenness 225 may be in various forms.

First, the inside of the unevenness can be maintained as an air hole. This may be done by forming irregularities on the upper surface of the first conductive nitride layer 220 and then forming the active layer 230 by the MOCVD method. When the active layer is formed by the HVPE method, the inside of the unevenness is filled with nitride, but in the case of the MOCVD method, the air hole can be formed while the horizontal growth of the nitride occurs in the unevenness of the unevenness.

The formed air hole may serve as a diffuse reflection layer. As already known, the diffuse reflection layer formed under the active layer may contribute to the improvement of light extraction efficiency to the upper portion of the light emitting device.

In addition, the inside of the unevenness 225 may be filled with an insulator such as SiO 2, SiN, or the like, and a metal having excellent reflectance such as aluminum (Al), chromium (Cr), or the like. In particular, the active layer may collapse when the size of the unevenness is large, and in this case, it is more preferable to fill the inside of the unevenness 225 with an insulator or a metal. When the inside of the concave-convex 225 is filled with an insulator, durability of the nitride may be improved. On the other hand, when the inside of the concave-convex 225 is filled with metal, it may serve as a reflective layer.

Of course, the lower portion of the inner region of the uneven portion 225 may be filled with an insulator or metal, and the upper portion may be maintained as an air hole. In this case, durability or a reflection effect can be exhibited simultaneously with an air hole holding effect.

2 illustrates a nitride light emitting device having a horizontal structure, but the present invention is not limited thereto and may be applied to a nitride light emitting device having a vertical structure.

3 shows the structure of a nitride-based light emitting device according to another embodiment of the present invention.

In the case of the light emitting device shown in FIG. 3, the basic structure is the same as the light emitting device shown in FIG. However, in the light emitting device illustrated in FIG. 3, the lattice buffer layer 310 is formed on the substrate 201.

A sapphire substrate is mainly used as a substrate for manufacturing a nitride-based light emitting device, and in recent years, much research has been made on silicon substrates. However, in the case of such substrates, particularly silicon substrates, lattice mismatching of the substrate and nitride results in high density dislocations in the growing nitride. This predecessor is a factor of lowering the light efficiency of the nitride-based light emitting device.

Thus, in the embodiment shown in FIG. 3, in order to reduce the lattice mismatch between the substrate and the nitride, a nitride buffer layer 310 is first formed on the substrate 201 and then nitride is grown. The lattice buffer layer 310 mitigates nitrides and lattice mismatches that are to be grown, thereby reducing predefects generated during nitride growth. As a result, the crystallinity of the growing nitride can be improved.

When the lattice buffer layer 310 is formed in the form of a deposition film, since it is difficult to solve the predecessor problem due to lattice mismatch with the substrate 201, the lattice buffer layer 310 is preferably formed in a powder form. The powder is most preferably a GaN powder having the same lattice structure as the nitride constituting the light emitting device. In addition, the powder may be a ZnO powder having a lattice structure similar to that of GaN.

In addition, the nitride grown on the lattice buffer layer 310 in powder form initially grows in the vertical direction, and then grows in the horizontal direction. As a result, flat nitrides can be grown.

The GaN powder and ZnO powder may be attached or fixed on the substrate 201 by a spin coating method.

In order to easily attach or fix the powder on the substrate 201, irregularities may be formed on the surface of the substrate 201.

4 shows a method of manufacturing a nitride-based light emitting device according to an embodiment of the present invention.

Referring to FIG. 4, the nitride-based light emitting device manufacturing method may include forming a first conductive nitride layer (S410), an unevenness forming step (S420), an active layer forming step (S430), and a second conductive nitride layer forming step ( S440) and the electrode forming step (S450).

Of course, as described above, the lattice buffer layer may be formed first using GaN powder or the like on the substrate before the first conductive nitride layer is formed (S402). Further, AlN may be formed on the substrate or the lattice buffer layer. A buffer layer may be formed first using nitrides such as GaN and the like (S404).

In the first conductive nitride layer forming step (S410), a nitride precursor and an impurity precursor are supplied to a deposition apparatus such as a metal-organic chemical vapor deposition (MOCVD) equipment and a deposition vapor phase epitaxy (HVPE), thereby providing a first conductive layer on a substrate. A type nitride layer is formed. Of course, when another layer such as a lattice buffer layer is formed on the substrate, the first conductive nitride layer is formed on the layer.

In the unevenness forming step (S420), the first conductive nitride layer is etched in a predetermined pattern. As a result, irregularities having a plurality of recesses and protrusions are formed on the upper surface of the one-conducting nitride layer.

After the unevenness is formed, the inside of the unevenness can be maintained in the air gap by forming the active layer by the MOCVD method. In addition, it is possible to improve reflection efficiency, durability, and the like by filling a metal such as aluminum or an insulator such as real SiO 2 inside the unevenness.

In the active layer forming step (S430), an active layer is formed on the first conductive nitride layer.

The active layer is contacted with the first conductive nitride layer at the protrusion between the uneven portion and the recessed portion formed on the surface of the first conductive nitride layer, thereby dispersing the movement path of the carrier moving from the first conductive nitride to the active layer.

In the second conductive nitride layer S440, a second conductive nitride layer having an electrical property opposite to that of the first conductive nitride layer is formed on the active layer.

After the first conductive nitride, the active layer and the second conductive nitride layer are formed through the above process, the n-electrode and the p-electrode are formed to drive the light emitting device (S450).

As described above, in the method of manufacturing the nitride-based light emitting device according to the present invention, a carrier path is moved from the first conductive nitride layer to the active layer by forming an active layer in a state in which irregularities are formed on the upper surface of the first conductive nitride layer. Can be dispersed, and the light emitting area in the active layer can be increased.

In addition, the method of manufacturing the nitride-based light emitting device according to the present invention can maintain the inside of the unevenness in the air gap, or to fill the insulator or metal, etc., can contribute to the improvement of the luminous efficiency and the like of the light emitting device to be manufactured.

While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments. Such changes and modifications are intended to fall within the scope of the present invention unless they depart from the scope of the present invention. Accordingly, the scope of the present invention should be determined by the following claims.

201: substrate 210: buffer layer
220: first conductive nitride layer 230: active layer
240: second conductive nitride layer 250: first electrode
260: second electrode 310: lattice buffer layer

Claims (13)

A first conductive nitride layer formed on the substrate and having irregularities having a plurality of protrusions and recesses on an upper surface thereof;
An active layer formed on the first conductive nitride layer; And
And a second conductive nitride layer formed on the active layer.
The active layer is in contact with the first conductive nitride layer through the protrusion between the concave and concave portion of the irregularities, the nitride-based light emitting, characterized in that the carrier migration path from the first conductive nitride layer to the active layer is dispersed device.
The method of claim 1,
The inside of the irregularities
A nitride-based light emitting device characterized in that the air hole is maintained.
The method of claim 1,
The inside of the irregularities
A nitride-based light emitting device, characterized in that the filling with an insulator.
The method of claim 1,
The inside of the irregularities
A nitride-based light emitting device characterized in that the filling with a metal.
The method of claim 1,
Between the substrate and the first conductive nitride layer,
A nitride-based light emitting device further comprises a lattice buffer layer formed of GaN powder.
The method of claim 1,
Between the substrate and the first conductive nitride layer,
A nitride-based light emitting device further comprises a lattice buffer layer formed of ZnO powder.
The method of claim 1,
The substrate
A nitride-based light emitting device, characterized in that the silicon substrate or sapphire substrate.
Forming a first conductive nitride layer on the substrate;
Etching the first conductive nitride layer in a predetermined pattern to form irregularities on an upper surface of the first conductive nitride layer;
Forming an active layer on the first conductive nitride layer; And
Forming a second conductive nitride layer on the active layer; method of manufacturing a nitride-based light emitting device comprising a.
9. The method of claim 8,
The active layer
A nitride-based light emitting device manufacturing method characterized in that formed by the MOCVD method.
9. The method of claim 8,
After forming the irregularities, the nitride-based light emitting device manufacturing method characterized in that the insulator is filled in the irregularities.
9. The method of claim 8,
After the formation of the unevenness, the nitride-based light emitting device manufacturing method characterized in that the metal is filled in the unevenness.
9. The method of claim 8,
Prior to forming the first conductive nitride layer, a nitride buffer layer is further formed by applying GaN powder on the substrate to form a lattice buffer layer.
9. The method of claim 8,
Before forming the first conductive type nitride layer, a method of manufacturing a nitride-based light emitting device, characterized in that to form a lattice buffer layer by applying ZnO powder on the substrate.
KR1020110057315A 2011-06-14 2011-06-14 Nitride based light emitting device with excellent light emitting efficiency and method of manufacturing the nitride based light emitting device KR20120138048A (en)

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