KR20120133834A - Light emitting device and Manufacturing method for light emitting device - Google Patents
Light emitting device and Manufacturing method for light emitting device Download PDFInfo
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- KR20120133834A KR20120133834A KR1020110052709A KR20110052709A KR20120133834A KR 20120133834 A KR20120133834 A KR 20120133834A KR 1020110052709 A KR1020110052709 A KR 1020110052709A KR 20110052709 A KR20110052709 A KR 20110052709A KR 20120133834 A KR20120133834 A KR 20120133834A
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- light emitting
- semiconductor layer
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- growth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
A light emitting device according to an embodiment includes a light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; And a first light extracting structure formed on the second semiconductor layer, wherein the first light extracting structure includes a plurality of uneven portions, and side cross-sections of the uneven portions form an effervescent triangle having different inclinations of both sides. .
Description
The embodiment relates to a light emitting device and a light emitting device manufacturing method.
LED (Light Emitting Diode) is a device that converts electrical signals into infrared, visible light or light using the characteristics of compound semiconductors. It is used in household appliances, remote controls, display boards, The use area of LED is becoming wider.
In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.
As the use area of the LED is widened as described above, it is important to increase the luminance of the LED as the brightness required for a lamp used in daily life and a lamp for a structural signal is increased.
An embodiment is to provide a light emitting device having improved internal quantum efficiency and light extraction efficiency.
A light emitting device according to an embodiment includes a light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; And a first light extracting structure formed on the second semiconductor layer, wherein the first light extracting structure includes a plurality of uneven portions, and side cross-sections of the uneven portions form an effervescent triangle having different inclinations of both sides. .
In the light emitting device according to the embodiment, since the light extraction structures having different side slopes are formed, the light extraction efficiency of the light emitting device can be improved.
In addition, since the light extraction structure is densely formed, the light extraction efficiency of the light emitting device can be improved.
In addition, since the light extraction structure is formed together during the growth of the semiconductor layer, the etching process for forming the light extraction structure can be omitted, thereby reducing manufacturing cost and manufacturing time, and damage to the light emitting device by the etching process. And damage can be prevented.
In addition, since the light emitting structure of the light emitting device is formed to have a non-polar or semi-polar growth surface, quantum efficiency and crystal defects of the light emitting device can be improved.
In addition, since the side of the light emitting structure is formed to have a polarity, it is possible to easily form a light extraction structure on the side of the light emitting device through a wet etching process can be improved economic efficiency and reliability of the light emitting device and the light emitting device manufacturing process.
1A to 1D are diagrams illustrating each surface of a hexagonal crystal structure as a reference drawing for explaining the crystal structure of the substrate and the nitride semiconductor layer;
2A and 2B illustrate a growth pattern when growing a semiconductor layer having a first growth surface on a growth substrate having a second growth surface;
3A is a sectional view showing a light emitting device according to the embodiment;
3B is an enlarged fragmentary view of a region A of FIG. 3A;
3C is a conceptual diagram illustrating an uneven portion forming a light extraction structure of the light emitting device according to the embodiment;
3D is a sectional view showing a light emitting device according to the embodiment;
4 is a view showing a light extraction structure of a light emitting device according to the prior art;
5 is a view showing a light extraction structure of a light emitting device according to the embodiment;
6A is a sectional view showing a light emitting device according to the embodiment;
FIG. 6B is an enlarged view of a portion B of FIG. 6A;
6C is a conceptual diagram illustrating an uneven portion forming a light extraction structure of a light emitting device according to an embodiment;
6D is a sectional view showing a light emitting device according to the embodiment;
6E is a sectional view showing a light emitting device according to the embodiment;
7 is a view illustrating a step in which a nitride semiconductor layer is grown on a growth substrate to form a light emitting structure;
8 is a view illustrating a step in which a first light extracting structure is formed on a light emitting structure;
9A is a view illustrating a step of forming an electrode by removing a part of the light emitting structure;
9B is a view illustrating a step of forming a second light extracting structure by etching the light emitting structure;
10 is a view showing a step in which a nitride semiconductor layer is grown on a growth substrate to form a light emitting structure;
11 is a view showing a step in which a first light extracting structure is formed on a light emitting structure;
12 illustrates bonding the support substrate on the light emitting structure and removing the growth substrate;
13A is a view illustrating a step of forming a second electrode layer on a light emitting structure;
13B is a view showing a step of forming a second light extracting structure on a light emitting structure;
13C is a view showing a step of forming a third light extracting structure on a light emitting structure;
14A is a perspective view of a light emitting device package including a light emitting device according to the embodiment;
14B is a cross-sectional view of the light emitting device package shown in FIG. 14A;
15A is a perspective view of a lighting system including a light emitting device according to the embodiment;
FIG. 15B is a sectional view showing a section CC ′ of the lighting system of FIG. 15A; FIG.
16 is an exploded perspective view of a liquid crystal display device including a light emitting device according to the embodiment;
17 is an exploded perspective view of a liquid crystal display including the light emitting device according to the embodiment.
In the description of embodiments, each layer, region, pattern, or structure is “under” a substrate, each layer (film), region, pad, or “on” of a pattern or other structure. In the case of being described as being formed on the upper or lower, the "on", "under", upper, and lower are "direct" "directly" or "indirectly" through other layers or structures.
In addition, the description of the positional relationship between each layer or structure, please refer to this specification, or drawings attached to this specification.
The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.
Hereinafter, a light emitting device according to an embodiment will be described with reference to the accompanying drawings.
1A to 1D are reference views for explaining a crystal structure of a growth substrate and a nitride semiconductor layer, and include C-plane {0001}, A-plane {11-20}, and R-plane {1-102 of a hexagonal crystal structure. }, The M-plane {1-100} is shown.
The nitride semiconductor layer and its alloys are most stable in hexagonal crystal structure (especially hexagonal wurzite structure). This crystal structure has three basic axes [a 1 , a 2 , which have a rotational symmetry of 120 degrees with respect to each other, as shown in FIGS. 1a to 1d, and are all perpendicular to the vertical C-axis [0001]. a 3 ].
The decision direction index is [0000], the family index of the decision direction index equivalent to one decision direction index is indicated as <0000>, the face direction index is (0000), and the family index of the face direction index equivalent to the one direction direction index Is represented by {0000}.
Therefore, the A-plane {11-20} described above is not only the (11-20) plane, but also the crystal plane that appears when the hexagonal crystal structure is rotated by 60 degrees about the C-axis [0001], that is, (-1-120). ), (-12-10), (1-210), (-2110), (2-1-10) shaving A-plane {11-20}.
Similarly, the R-plane {1-102} is not only the (1-102) plane, but also the crystal plane resulting from rotating the hexagonal crystal structure by 60 degrees about the C-axis [0001], that is, (-1102), (10 -12), (-1012), (01-12), (0-112) shaving R-plane {1-102}.
Similarly, the M-plane {1-100} is not only the (1-100) plane, but also the crystal plane that appears when the hexagonal crystal structure is rotated by 60 degrees about the C-axis [0001], that is, (-1100), (10 -10), (-1010), (01-10), and (0-110) shaving R-planes {1-102}.
1A to 1D, the growth substrate and the nitride semiconductor layer have a hexagonal crystal structure. That is, the growth substrate may be formed of a material having a hexagonal crystal structure, for example, sapphire (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, or the like.
When the nitride semiconductor layer is grown on the substrate having the crystal structure shown in the drawing, when the nitride semiconductor layer is grown in the C-plane {0001} direction, the nitride thin film is easily grown and is used as a substrate for nitride growth because it is stable at high temperatures. However, the nitride semiconductor layer grown in the C-plane {0001} direction has a polarization effect. This polarization effect includes the lattice constant difference between the nitrides and the same C-axis when forming a heterojunction structure with spontaneous polarizaion, in which symmetrical elements included in the crystal structure are formed along the C-axis while the gallium and nitrogen layers are repeatedly stacked. There is a piezoelectric polariziton caused by the generation of stress due to the property of orientation. The piezoelectric coefficient of nitride has a large value compared to almost all semiconductor materials, and can cause very large polarization even with small strains. The electric field caused by the two polarizations changes the energy band structure of the quantum well structure, thereby distorting the distribution of electrons and holes. This effect is called the quantum confined stark effect (QCSE), which causes low internal quantum efficiency in light emitting devices that generate light by recombination of electrons and holes, and emits light such as red shift in the emission spectrum. It may adversely affect the electrical and optical characteristics of the device. In addition, the fast growth rate of the C-plane {0001} tends to increase crystal defects in the nitride semiconductor layer.
In the hexagonal crystal structure, the A-plane {11-20}, the R-plane {1-102}, and the M-plane {1-100} are non-polar or semipolar planes, and the C-plane {0001} The growth of the nitride semiconductor layer is difficult, but it does not generate an electrostatic field due to the polarization effect occurring in the C-plane {0001}, or the generation of the electrostatic field is reduced.
On the other hand, in the gallium nitride (GaN) crystal structure, the nonpolar planes are M-planes {1-100} and A-planes {11-20} parallel to the C-axis [0001], and the semipolar planes are C-axis [ 0001] and an R-plane {1-102} having an inclination.
2A and 2B are views showing a growth pattern when growing a semiconductor layer having a first growth surface on a growth substrate having a second growth surface.
Here, the
In the embodiment, a sapphire substrate is used as the
2A and 2B, the
Since the
Meanwhile, since the
Ga-face and N-face of the C-plane {0001} can be easily etched through a wet etching process, the nitride when the
On the other hand, during the growth process of the
3A is a cross-sectional view illustrating a light emitting device according to an embodiment, FIG. 3B is a partially enlarged view illustrating region A of FIG. 3A, and FIG. 3C is a conceptual view illustrating an uneven portion forming a light extraction structure of the light emitting device according to the embodiment. 3D and 3E are cross-sectional views showing light emitting devices according to the embodiment.
Referring to FIG. 3A, the
The
Meanwhile, a PSS (Patterned SubStrate) structure may be provided on the upper surface of the
Meanwhile, a buffer layer (not shown) may be disposed on the
The
The
In addition, an undoped semiconductor layer (not shown) may be further included below the
An
For example, when the
A conductive clad layer (not shown) may be formed on or under the
The
Meanwhile, an intermediate layer 340 may be formed between the
The intermediate layer 340 may have a band gap larger than that of the barrier layer included in the
The
In addition, the doping concentrations of the conductive dopants in the
In addition, the
Meanwhile, a portion of the
Meanwhile, a method of exposing a portion of the
In addition, a
Meanwhile, the first and
The first
The first
The uneven portion may be irregularly formed in a random size, but is not limited thereto. The uneven portion is an uneven upper surface and may include at least one of a texture pattern, an uneven pattern, and an uneven pattern.
As the first
On the other hand, the uneven portion may have the form of an effervescent triangle having different slopes of both sides as shown in FIG. 3B. That is, each of θ1 and θ2 may have a different value from each other.
By forming an uneven portion having an elongated triangular cross-section having different inclinations at both sides, the range of the incident angle at which total reflection of light generated in the
On the other hand, the inclination θ1 and θ2 of the side of the uneven portion may have a slope of 30 ° to 60 °, respectively, the peak θ3 of the uneven portion may be formed at a right angle, but is not limited thereto.
Meanwhile, the height h1 of the uneven portion forming the first
Meanwhile, as shown in FIG. 3B, the uneven parts forming the first
Meanwhile, the uneven portion may have a bottom surface S1 as shown in FIG. 3C. Since the bottom surface S1 of the uneven portion is formed to have a rectangular shape, the uneven portion may have a shape such as a square pyramid and a square pyramid.
Since the bottom surface S1 of the uneven portion is formed in a quadrangle, the first
Meanwhile, as illustrated in FIG. 3D, a second
As described above, since the first growth surface of the nitride semiconductor layer forming the
Ga-face and N-face of the C-plane {0001} can be easily etched through the wet etching process, the side surface of the
4 is a view showing a light extraction structure of the light emitting device according to the prior art, Figure 5 is a view showing a light extraction structure of the light emitting device according to the embodiment.
First, referring to FIG. 4, the light extracting structure of the light emitting device according to the related art has a relatively non-dense distribution, and thus it can be understood that a flat region on the light emitting structure remains extensively. Therefore, the light generated in the active layer is totally reflected at the interface of the light emitting structure to reduce the light extraction efficiency and the light emitting efficiency of the light emitting device.
Subsequently, referring to FIG. 5, the light emitting device according to the embodiment may identify a light extraction structure in which the uneven portion having a relatively dense distribution is formed. Therefore, the light generated in the active layer is prevented from total reflection at the interface on the light emitting structure can be improved light extraction efficiency and luminous efficiency of the light emitting device.
6A is a cross-sectional view showing a light emitting device according to the embodiment, FIG. 6B is a partially enlarged view showing a region B of FIG. 6D and 6E are cross-sectional views showing light emitting devices according to the embodiment.
Referring to FIG. 6A, the
The
That is, the
The
The
The reflective layer (not shown) may be disposed between the ohmic layer (not shown) and the insulating layer (not shown), and have excellent reflective properties such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg , Zn, Pt, Au, Hf, or a combination of these materials, or a combination of these materials or IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, to form a multi-layer using a transparent conductive material such as Can be. Further, the reflective layer (not shown) can be laminated with IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni and the like. In addition, when the reflective layer (not shown) is formed of a material in ohmic contact with the light emitting structure 470 (for example, the first semiconductor layer 430), the ohmic layer (not shown) may not be separately formed, and the like is limited thereto. I do not.
The ohmic layer (not shown) is in ohmic contact with the bottom surface of the
In addition, the
The
The
Meanwhile, a first
The first
The uneven portion includes several protrusions protruding below the
As the first
On the other hand, the uneven portion may have a cross section in the form of an effervescent triangle having different inclinations of both sides as shown in FIG. 6B. That is, each of θ4 and θ5 may have a different value from each other.
By forming an uneven portion having an elongated triangular cross-section having different inclinations at both sides, the range of the incident angle at which total reflection of light generated in the
Meanwhile, as illustrated in FIG. 6B, the first
On the other hand, if the size of the uneven portion is large or small, since the light extraction efficiency of the
Meanwhile, as shown in FIG. 6C, each uneven portion may have a bottom surface S2 having a rectangular shape. Since the bottom surface S2 of the uneven portion is formed to have a quadrangular shape, the uneven portion may have, for example, an inverted square pyramid or a square pyramid.
Since the bottom surface S2 of the uneven portion is formed in a quadrangle, the first
Meanwhile, the first
In addition, since the first
The
Well
A conductive clad layer (not shown) may be formed on or under the
Meanwhile, an
Meanwhile, the above-described
The
A
The
The
Meanwhile, as illustrated in FIG. 6D, a second
As described above, since the first growth surface of the nitride semiconductor layer forming the
Ga-face and N-face of the C-plane {0001} can be easily etched through a wet etching process, the side surface of the
Meanwhile, as illustrated in FIG. 6E, a third
The third
The roughness may be formed to have various shapes such as a cylinder, a polygonal column, a cone, a polygonal pyramid, a truncated cone, a polygonal pyramid, and the like, preferably including a horn shape.
The third
Meanwhile, the second
7 to 9B are views illustrating a manufacturing process of the light emitting device according to the embodiment.
Hereinafter, a manufacturing process of a light emitting device according to an embodiment will be described with reference to FIGS. 7 to 9B.
7 illustrates a step in which a semiconductor layer is grown on a
The
In addition, the
Subsequently, as shown in FIG. 8, roughness may be formed on the growth surface of the
For example, roughness may be formed by increasing a growth pressure during growth of the
Alternatively, for example, roughness may be formed by lowering a growth temperature during growth of the
Alternatively, for example, roughness is formed on the growth surface of the
Meanwhile, the source loading condition may vary depending on the growth temperature, the growth pressure, and the predetermined additive loading condition of the
Accordingly, a first
Since the first
Subsequently, as shown in FIG. 9A, one region of the
Meanwhile, as illustrated in FIG. 9B, the
The second
As described above, the Ga-face or N-face of the C-plane {0001} is formed on the side surface of the
10 to 13C are views illustrating a manufacturing process of the light emitting device according to the embodiment.
In another embodiment, first, the
As described above, the first
Subsequently, as illustrated in FIG. 12, the
Meanwhile, the
As the supporting
Meanwhile, as illustrated in FIG. 13A, the
Meanwhile, as illustrated in FIG. 13B, a second
The second
As described above, the Ga-face or N-face of the C-plane {0001} is formed on the side of the
Meanwhile, as illustrated in FIG. 13C, the third
The second
14A and 14B are a perspective view and a cross-sectional view of a light emitting device package according to an embodiment.
14A and 14B, the light emitting
The
The inner surface of the
As the directivity of light decreases, the concentration of light emitted from the
On the other hand, the shape of the
The
In addition, the
On the other hand, the
The resin layer (not shown) may be filled in the
The resin layer (not shown) may be formed of silicon, epoxy, and other resin materials, and may be formed by filling the
In addition, the resin layer (not shown) may include a phosphor, and the phosphor may be selected from a wavelength of light emitted from the
The phosphor is one of a blue light emitting phosphor, a blue green light emitting phosphor, a green light emitting phosphor, a yellow green light emitting phosphor, a yellow light emitting phosphor, a yellow red light emitting phosphor, an orange light emitting phosphor, and a red light emitting phosphor according to a wavelength of light emitted from the
That is, the phosphor may be excited by the light having the first light emitted from the
Similarly, when the
Such a fluorescent material may be a known fluorescent material such as a YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride or phosphate.
The first and second lead frames 740 and 750 are made of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), and tantalum (Ta). , Platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), aluminum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium (Ge) It may include one or more materials or alloys of hafnium (Hf), ruthenium (Ru), iron (Fe). In addition, the first and second lead frames 740 and 750 may be formed to have a single layer or a multilayer structure, but the embodiment is not limited thereto.
The first second lead frames 740 and 750 are spaced apart from each other and electrically separated from each other. The
A plurality of light emitting device packages 700 according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting
15A is a perspective view illustrating a lighting apparatus including a light emitting device package according to an embodiment, and FIG. 15B is a cross-sectional view illustrating a C-C 'cross section of the lighting apparatus of FIG. 15A.
15A and 15B, the
The light emitting
The light emitting
Meanwhile, the light emitting
The
The
On the other hand, since the light generated from the light emitting
16 is an exploded perspective view of a liquid crystal display including the light emitting device according to the embodiment.
FIG. 16 illustrates an edge-light method, and the
The liquid
The
The thin
The thin
The
The light emitting device module 920 may include a
Meanwhile, the light emitting device package 9224 according to the embodiment includes a light emitting device (not shown), and the light emitting device (not shown) includes a light extraction structure (not shown) including an uneven portion having different side slopes, Since the extraction efficiency may be improved, the light emission efficiency of the light emitting
The
17 is an exploded perspective view of a liquid crystal display including the light emitting device according to the embodiment. However, the parts illustrated and described in FIG. 16 will not be repeatedly described in detail.
17 illustrates a direct method, the
Since the liquid
The
LED Module 1023 A plurality of light emitting
Meanwhile, the light emitting
The
Meanwhile, the light generated by the light emitting device module 1023 is incident on the
Meanwhile, the light emitting device according to the embodiment is not limited to the configuration and method of the embodiments described above, but the embodiments may be modified so that all or some of the embodiments may be selectively And may be configured in combination.
In addition, while the preferred embodiments have been shown and described, the present invention is not limited to the specific embodiments described above, and the present invention is not limited to the specific embodiments described above, and the present invention may be used in the art without departing from the gist of the invention as claimed in the claims. Various modifications can be made by those skilled in the art, and these modifications should not be individually understood from the technical spirit or the prospect of the present invention.
300
320: first semiconductor layer 330: active layer
340: intermediate layer 350: second semiconductor layer
360: light emitting structure 380: first light extraction structure
Claims (18)
And a first light extracting structure formed on the first growth surface of the light emitting structure.
The first light extraction structure includes a plurality of uneven parts,
The side cross section of the uneven part is
A light emitting device that forms an effervescent triangle having different inclinations on both sides.
The first growth surface is
A light emitting device comprising at least one of a nonpolar crystal plane and a semipolar crystal plane.
The first growth surface is any one of the A-plane {11-20}, R-plane {1102}, M-plane {1-100}
The slope of the side,
Light emitting device 30 to 60 degrees.
The height of the uneven portion,
100 nm to 500 nm light emitting device.
The width of the uneven portion,
Light emitting device is 1.5 times to 1.8 times the height of the uneven portion.
The uneven portion,
Light emitting device formed to have a number of 4 to 10 per 1 um 2 .
And a support substrate formed on the first semiconductor layer and the second semiconductor layer.
And a second light extracting structure formed on a side of the light emitting structure.
The light emitting structure is formed of a nitride semiconductor layer,
The nitride semiconductor layer includes a C-plane {0001},
The second light extraction structure,
A light emitting device formed on the C-plane {0001}.
The second light extraction structure,
A light emitting device formed on the Ga-face or N-face of the nitride semiconductor layer.
And a third light extracting structure formed on an upper surface of the light emitting structure.
A second step of growing a nitride semiconductor layer on the growth substrate,
The second step comprises:
Growing a first semiconductor layer on the growth substrate;
A fourth step of growing an active layer on the first semiconductor layer; And
And a fifth step of growing a second semiconductor layer on the active layer.
The fifth step,
A sixth step and a seventh step,
The sixth and seventh steps,
A light emitting device manufacturing method in which at least one of a growth temperature, a growth pressure, an additive amount, and a source amount is different from each other.
The sixth step has a first growth temperature, and the seventh step has a second growth temperature,
And the second growth temperature is lower than the first growth temperature.
The sixth step has a first growth pressure, and the seventh step has a second growth pressure,
And the second growth pressure is higher than the first growth pressure.
The nitride semiconductor layer includes a first growth surface, and the growth substrate includes a second growth surface,
The first growth surface and the second growth surface is a light emitting device manufacturing method of any one of a non-polar crystal surface and a semi-polar crystal surface.
The first growth surface is any one of the A-plane {11-20}, R-plane {1102}, M-plane {1-100}.
The second growth surface is any one of the A-plane {11-20}, R-plane {1102}, M-plane {1-100}.
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KR1020110052709A KR20120133834A (en) | 2011-06-01 | 2011-06-01 | Light emitting device and Manufacturing method for light emitting device |
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KR1020110052709A KR20120133834A (en) | 2011-06-01 | 2011-06-01 | Light emitting device and Manufacturing method for light emitting device |
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