KR20120131009A - Light emitting device and manufacturing method of the same - Google Patents

Light emitting device and manufacturing method of the same Download PDF

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Publication number
KR20120131009A
KR20120131009A KR1020110049165A KR20110049165A KR20120131009A KR 20120131009 A KR20120131009 A KR 20120131009A KR 1020110049165 A KR1020110049165 A KR 1020110049165A KR 20110049165 A KR20110049165 A KR 20110049165A KR 20120131009 A KR20120131009 A KR 20120131009A
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South Korea
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layer
ohmic contact
semiconductor layer
semiconductor
contact layer
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KR1020110049165A
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Korean (ko)
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최병균
김영채
한예지
박청훈
정태일
강세은
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엘지디스플레이 주식회사
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Publication of KR20120131009A publication Critical patent/KR20120131009A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: A light emitting device for and a manufacturing method thereof are provided to prevent penetration with photon crystal of a sealing material by forming a plurality of holes which is arranged in a matrix at the same interval on an ohmic contact layer. CONSTITUTION: A first semiconductor layer(131), a second semiconductor layer(133), and an active layer(132) are successively laminated on a substrate. An ohmic contact layer(140) is formed on the second semiconductor layer with a transparent conductive material. A first electrode is formed on a predetermined region of the first semiconductor layer. A second electrode is formed on the ohmic contact layer. Photon crystal(141) comprises a plurality of holes which is arranged on the ohmic contact layer in a matrix.

Description

LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME

The present invention relates to a light emitting device capable of minimizing a decrease in light extraction efficiency when a package is mounted on a frame, rather than a chip type, and a method of manufacturing the same.

A light emitting device (LED) includes a photoelectric layer composed of a plurality of p-n bonded semiconductor layers and converts electrical energy into optical energy to emit light.

Such a light emitting device has an advantage of having high energy efficiency since it can emit light of high brightness at low voltage, compared to other devices that emit light. In particular, when the photoelectric layer is formed of a gallium nitride (GaN) -based nitride semiconductor, the light emitting device can emit light in a wide range of wavelengths, including infrared to infrared. Accordingly, the light emitting device may be variously applied to various automation devices such as a backlight unit, a display board, a display, and a home appliance of a liquid crystal display, and may be used for environmentally harmful substances such as arsenic (As) and mercury (Hg). Since it does not include, it has been spotlighted as a next-generation light source.

A general light emitting device includes a photoelectric layer including a plurality of semiconductor layers including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, a first electrode for injecting electrons into the n-type semiconductor layer, and holes in the p-type semiconductor layer. It includes a second electrode for injecting.

However, since a semiconductor material generally has a higher refractive index than air, in order for light generated in the photoelectric layer to be emitted to the outside, the semiconductor material must have an incident angle exceeding a critical angle corresponding to the refractive index of the semiconductor material and air. do. That is, while the refractive index of air is 1 (n air = 1), the refractive index of gallium nitride (GaN), which is one of the semiconductor materials, is known to be 2.5 (n GaN = 2.5) higher than that.

As such, as the semiconductor material has a higher refractive index than air, not all light generated in the photoelectric layer is emitted to the outside, but only light having an incident angle greater than the critical angle at the interface between the semiconductor material and the outside is emitted to the outside. Can be. In other words, light having an angle of incidence below the critical angle at the interface between the semiconductor material and the outside is totally reflected at the interface between the semiconductor material and the outside, so as to be bound inside the device and cannot be emitted to the outside. Therefore, the light extraction efficiency of the light emitting device (here, "light extraction efficiency" means a ratio of the amount of light applied to the device or the amount of light emitted to the outside to the amount of light generated in the photoelectric layer) is difficult to improve.

In addition, the light emitting device is a package type (hereinafter, packaged light emission) mounted in a frame, rather than being used as a chip form (hereinafter, referred to as a chip type light emitting device as a chip) separately separated from a wafer. Devices are commonly referred to as "light emitting device packages". At this time, the light emitting device package includes a sealing material for fixing the chip to the frame surrounding the outside of the chip for emitting light. By the way, the sealing material has a different refractive index as a material different from the semiconductor material, in particular has a higher refractive index than the outside (air, air). For example, the refractive index (n Resin ) of the resin (resin) that is a typical sealing material is known to be 1.4 to 1.6.

As such, as the sealing material is different from the semiconductor material and has a higher refractive index than air, even at the interface between the sealing material and the semiconductor material and the interface between the sealing material and the outside, light having an angle of incidence below the critical angle is totally reflected and bound inside the chip. It cannot be released to the outside. Therefore, there is a problem that the light extraction efficiency of the light emitting device package is reduced by a relatively large reduction rate than the chip.

Accordingly, various methods for improving the light extraction efficiency of the light emitting device (herein, "light extraction efficiency" means the amount of charge applied to the device or the ratio of light emitted to the outside to light generated in the photoelectric layer) are sought. have.

The present invention is to provide a light emitting device and a method of manufacturing the same, which can minimize the reduction of light extraction efficiency by the sealing material, even if covered with a sealing material.

In order to solve such a problem, the present invention is a substrate; A photovoltaic layer including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on the substrate; An ohmic contact layer formed of a transparent conductive material on the second semiconductor layer; A first electrode formed on a portion of the first semiconductor layer exposed by removing portions of each of the ohmic contact layer, the second semiconductor layer, and the active layer; A second electrode formed on the ohmic contact layer; A photonic crystal comprising a plurality of holes arranged in the matrix at equal intervals in the ohmic contact layer; And a cover layer formed of a thin film covering the photonic crystal on the ohmic contact layer.

In addition, the present invention comprises the steps of laminating a first semiconductor layer, an active layer and a second semiconductor layer on a substrate, to form a photoelectric layer; Stacking a transparent conductive material on the second semiconductor layer to form an ohmic contact layer; Removing a portion of each of the ohmic contact layer, the second semiconductor layer, and the active layer to expose a portion of the first semiconductor layer; And forming a first electrode disposed on a portion of the exposed first semiconductor layer, and a second electrode disposed on the ohmic contact layer, wherein the first electrode and the second electrode are formed. Before or after the step of forming a photonic crystal composed of a plurality of holes arranged in a matrix at different intervals in the other partial region of the ohmic contact layer; And forming a cover layer of a thin film covering the photonic crystal on the ohmic contact layer.

As described above, the light emitting device according to the present invention includes a photonic crystal composed of a plurality of holes arranged in matrix at equal intervals on the ohmic contact layer and a cover layer formed of a thin film covering the photonic crystal on the ohmic contact layer. At this time, even if the upper portion of the light emitting element is coated with the sealing material, the photonic crystal and the outside are separated by the cover layer, and the sealing material cannot penetrate into the photonic crystal.

Therefore, regardless of whether the sealant is applied, the inside of the photonic crystal can be kept as filled with air, so that even when in the package form, the increase in light extraction efficiency due to the photonic crystal can be kept the same or similar to that in the chip form. Can be.

1 is a cross-sectional view of a light emitting device according to an embodiment of the present invention.
2 is a plan view of a light emitting device according to an exemplary embodiment of the present invention.
3A to 3C show cross-sectional examples of II-II 'of FIG. 2.
4 is a cross-sectional view of a comparative example without a cover layer.
5A and 5B show an optical band gap of each of the light emitting devices according to the comparative example and the embodiment of the present invention shown in FIG.
6 is a flowchart illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.
7A to 7I are process charts illustrating a method of manufacturing the light emitting device shown in FIG. 6.
8 is a flowchart illustrating another example of a method of manufacturing a light emitting device according to an embodiment of the present invention.

Hereinafter, a light emitting device and a method of manufacturing the same according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

First, a light emitting device according to an exemplary embodiment of the present invention will be described with reference to FIGS. 1, 2 and 3A to 3C.

1 is a cross-sectional view of a light emitting device according to an embodiment of the present invention, FIG. 2 is a plan view of a light emitting device according to an embodiment of the present invention, and FIGS. 3A to 3C show cross-sectional examples of II-II 'of FIG. 2. will be. 1 is a cross-sectional view taken along the line II ′ of FIG. 2.

As shown in FIG. 1, a light emitting device 100 according to an exemplary embodiment of the present invention may include a substrate 110, a buffer layer 120 formed on the substrate 110, and a first stacked sequentially on the buffer layer 120. The photoelectric layer 130 including the semiconductor layer 131, the active layer 132, and the second semiconductor layer 133, the ohmic contact layer 140 formed of a transparent conductive material on the second semiconductor layer 133, and ohmic A photonic crystal 141 consisting of a plurality of holes arranged in a matrix on the contact layer 140, a cover layer 150 formed of a thin film covering the photonic crystal 141 on the ohmic contact layer 140, and an ohmic contact layer 140. On the first electrode 161 formed on the partial region of the first semiconductor layer 131 exposed by removing partial regions of the second semiconductor layer 133 and the active layer 132 and the ohmic contact layer 140. The second electrode 162 is formed on. The upper portion of the light emitting device 100 including the cover layer 150 and the first and second electrodes 161 and 162 is covered with the sealing material 200.

The substrate 110 may be selected from Al 2 O 3 (Sapphire: Sapphire), SiC, and AlN having a crystal structure similar to GaN, GaN-based, and GaN. In particular, the substrate 110 may be selected as a sapphire (Al 2 O 3 ) substrate having the advantages of low cost, low strain due to alkali or acid, and low strain due to heat.

The buffer layer 120 is a buffer layer for reducing crystal defects of the photoelectric layer 130 generated due to the lattice constant and thermal expansion coefficient difference between the substrate 110 and the photoelectric layer 130. That is, when the substrate 110 and the photoelectric layer 130 are not selected as the same material, the buffer layer 120 may have a lattice constant and a thermal expansion coefficient of the semiconductor material forming the photoelectric layer 130. Since they do not coincide with each other, it is to minimize the occurrence of crystal defects in the semiconductor material grown on the substrate 110. Thus, when the substrate 110 and the photoelectric layer 130 are selected as the same material, the buffer layer 120 may not be included.

The buffer layer 120 may be formed by growing an undoped nitride semiconductor or an n-type nitride semiconductor in an atmosphere including low temperature heat for growing a semiconductor material horizontally on a growth surface.

The first semiconductor layer 131 is formed by stacking an n-type nitride semiconductor on the buffer layer 120 which is doped with n-type impurities to increase electron mobility. In this case, the n-type impurity may be Si.

The active layer 132 is formed by stacking a quantum well structure nitride semiconductor on the first semiconductor layer 131. In the active layer 132, electrons and holes injected through the first electrode 161 and the second electrode 162 meet and recombine to generate excitons, and the excitons generated at this time fall into the atmospheric state. Light is generated from.

For example, when the semiconductor material forming the photoelectric layer 130 is gallium nitride (GaN) -based, the active layer 132 may include a barrier layer of In x (Al y Ga (1-y) ) N and In x (Al y). It may be formed as a single quantum well structure or multiple quantum well structure (MQW) consisting of a well layer of Ga (1-y) ) N. In this case, according to the composition ratio of the nitride semiconductors (InGaN, GaN) of the barrier layer and the well layer, the wavelength region of the light emitted from the light emitting device is freely determined from the long wavelength to the short wavelength having the AlN (˜6.4 eV) band gap.

The second semiconductor layer 133 is formed by stacking a p-type nitride semiconductor on the active layer 132 which is doped with a p-type impurity to increase hole mobility. In this case, the p-type impurity may be Mg.

Meanwhile, the buffer layer 120 and the photoelectric layer 130 may be formed by growing a semiconductor material using a metal organic chemical vapor deposition (MOCVD) method.

The ohmic contact layer 140 is to diffuse the holes injected through the second electrode 162 to the second semiconductor layer 133 as wide as possible. The ohmic contact layer 140 is formed of a transparent conductive material on the second semiconductor layer 133. . At this time, the transparent conductive material forming the ohmic contact layer 140 is any one of the metal oxide of SnO 2 , ZnO, In 2 O 3 and TiO 2 and these metal oxides of F, Sn, Al, Fe, Ga and Nb At least one may be selected as the doped material.

The first electrode 161 is formed on a partial region of the first semiconductor layer 131 exposed to the outside by removing partial regions of each of the ohmic contact layer 140, the second semiconductor layer 133, and the active layer 132. do.

The second electrode 162 is formed on the ohmic contact layer 140. In this case, the second electrode 162 may be electrically connected to the second semiconductor layer 133 through the ohmic contact layer 140, or may be formed through a contact hole (not shown) passing through the ohmic contact layer 140. 2 may be directly connected to the semiconductor layer 133.

The first and second electrodes 161 and 162 may be formed of the same or different conductive materials. In particular, the first and second electrodes 161 and 162 may be formed of a metal including at least one of Ni, Au, Pt, Ti, Al, and Cr, or two or more. It may be chosen as a structure or alloy.

The photonic crystal 141 is for forming a predetermined optical band gap by periodically changing the refractive index on the light emitting surface.

As shown in FIG. 2, the photonic crystal 141 includes a plurality of holes arranged in a matrix at different intervals in another partial region of the ohmic contact layer 140. By the photonic crystal 141, as the inside of the hole and the outside of the hole having different refractive indices in the light emitting surface are regularly arranged, an optical band gap is formed. In this case, since light in the wavelength region corresponding to the optical band gap can be easily emitted to the outside, the wider the optical band gap is, the light extraction efficiency can be improved.

At this time, the depth of the photonic crystal 141 may be variously selected in consideration of the optical band gap to be formed in the device, or the current flow density in the photoelectric layer 130.

That is, as shown in FIG. 3A, the photonic crystal 141 is formed to have a thickness smaller than that of the ohmic contact layer 140, and may penetrate only a portion of the ohmic contact layer 140. Alternatively, as shown in FIG. 3B, a thickness deeper than the ohmic contact layer 140 and shallower than the second semiconductor layer 133 may be formed to penetrate the ohmic contact layer 140 and a part of the second semiconductor layer 133. can do. Alternatively, as shown in FIG. 3C, a thickness deeper than the active layer 132 and shallower than the first semiconductor layer 132 may be formed, such as the ohmic contact layer 140, the second semiconductor layer 133, the active layer 132, and the like. It may penetrate a portion of the first semiconductor layer 131.

Meanwhile, FIG. 2 illustrates that the plurality of holes forming the photonic crystal 141 have a circular cross section with respect to the light emitting surface, but this is merely an example and may have a cross section of another polygon.

1 and 2, the light emitting device according to the exemplary embodiment of the present invention includes a cover layer 150 of a thin film that blocks an inlet of the photonic crystal 141.

The cover layer 150 is a thin film shielding film for preventing other materials other than air from being filled in the photonic crystal 141. Therefore, the cover layer 150 may not be selected as a material that can be formed only by the deposition or growth method, and should be selected as a material having a high light transmittance so as not to lower the light extraction efficiency. In particular, the cover layer 150 is selected as graphene (GRAPHENE) formed using an adhesion method, but not a deposition or growth method, while having transparency and conductivity. In this case, graphene refers to at least one carbon atom layer formed by repeating attaching and separating the flexible film coated with graphite powder thinly.

As graphene has a higher light transmittance than ITO, when the cover layer 150 that blocks the light emitting surface is formed of graphene, the light extraction efficiency may be minimized. And, since the graphene has a high thermal conductivity, if the cover layer 150 is formed of graphene, it is easy to disperse heat generated in the device, thereby minimizing deterioration of the device, thereby increasing the lifespan and reliability of the device. You can expect an improvement.

By the cover layer 150, the inside of the photonic crystal 141 may be isolated from the outside and filled only with air. Therefore, the inside of the plurality of holes can have a uniform refractive index of a relatively low error rate, so that an optical band gap between the elements can be generated evenly, thereby improving the reliability of the element. In addition, in order to package the light emitting device 100, since the sealing material 200 coated on the light emitting device 100 by the cover layer 150 is prevented from penetrating into the photonic crystal 141, the sealing material ( 200) it is possible to minimize the change in the optical band gap due to the application.

Meanwhile, the identification numbers 171 and 172 which are not described in FIG. 1 represent the first and second leads, and are bonded to the first and second electrodes 161 and 162, and thus the first and second electrodes 161 and 162. ) And the outside. Since the first and second leads 171 and 172 must be bonded to the first and second electrodes 161 and 162 before applying the sealant 200, the first and second leads 171 and 172 are illustrated in FIG. 1. The first and second leads 171 and 172 will be described in detail later with reference to FIGS. 7H and 7I.

4 is a cross-sectional view of a comparative example that does not include a cover layer, and FIGS. 5A and 5B show optical band gaps of light emitting devices according to the comparative example and the embodiment of the present invention shown in FIG. 4. 5A and 5B are derived under experimental conditions including a hexagonal cross section, a photonic crystal composed of a plurality of holes having a diameter of 192 nm, a depth of 120 nm, and a period of 278 nm, and an ohmic contact layer selected from ITO.

As shown in FIG. 4, the light emitting device 10 according to the comparative example includes only the photonic crystal 11, and does not include a cover layer that blocks the inlet of the photonic crystal 11 and isolates the inside of the photonic crystal 11. .

Therefore, according to the comparative example, the chip form not covered by the sealant 20 may have a high rate of increase in light extraction efficiency due to the photonic crystal 11, but the sealant 20 is disposed on the light emitting device 10 in the package form. Is applied, the sealing material 20 can easily and irregularly penetrate into the photonic crystal 11, and the inside of each hole constituting the photonic crystal 11 has a nonuniform refractive index.

Accordingly, while the photonic crystal 11 is irregularly filled with the sealing material 20, the optical bandgap by the photonic crystal 11 of the comparative example is narrow in the region of 316 ~ 322nm and 468 ~ 480nm, unlike when the chip form Appears (FIG. 5A). Thus, according to the comparative example, due to the influence of the sealing material 20, it can be expected that the increase value of the light extraction efficiency by the photonic crystal 11 is lowered.

In contrast, according to the exemplary embodiment of the present invention, the inside of the photonic crystal 141 is isolated from the outside by the cover layer 150. Thus, even if the sealing material 200 is applied to the upper portion of the light emitting device 100 in the form of a package, the sealing material 200 cannot penetrate into the photonic crystal 141, so that the photonic crystal 141 is filled only with air, so that the photon The inside of each hole constituting the crystal 141 has a uniform refractive index.

Accordingly, even when the upper part of the device is coated with the sealing material 200, the inside of the photonic crystal 141 uniformly filled with air is maintained as it is, substantially the same as in the case of the chip form, 297 to 320 nm, 343 to 352 nm, and 395 to 462 nm. It appears as the area of (FIG. 5B). Thus, according to the embodiment of the present invention, by blocking the influence of the sealing material 200, it can be expected that the rate of increase of the light extraction efficiency by the photonic crystal 141 can be maintained the same or similar to that of the chip form have.

Next, a method of manufacturing a light emitting device according to an embodiment of the present invention will be described with reference to FIGS. 6, 7A to 7I, and 8.

6 is a flowchart illustrating a method of manufacturing a light emitting device according to an exemplary embodiment of the present invention, and FIGS. 7A to 7I are flowcharts illustrating a method of manufacturing the light emitting device shown in FIG. 6A. 8 is a flowchart illustrating a method of manufacturing a light emitting device according to another embodiment of the present invention.

As shown in FIG. 6, in the method of manufacturing a light emitting device according to an embodiment of the present invention, forming a photoelectric layer by stacking a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate (S100). Stacking a transparent conductive material on the semiconductor layer to form an ohmic contact layer (S110), and removing a partial region of each of the ohmic contact layer, the second semiconductor layer, and the active layer to expose a partial region of the first semiconductor layer. (S120), forming a photonic crystal consisting of a plurality of holes arranged in a matrix at other intervals of the ohmic contact layer (S130), forming a cover layer of a thin film covering the photonic crystal on the ohmic contact layer In operation S140, forming a first electrode disposed on a portion of the exposed first semiconductor layer and a second electrode disposed on the ohmic contact layer, in operation S150, a plurality of chips formed on the wafer may be individually formed. Separating into chips (S160) and Mounting the chip in the frame and by applying the sealing material to the chip thereon, and a step (S170) to the packaging.

As shown in FIG. 7A, in the forming of the photoelectric layer 130 (S100), the first semiconductor layer 131 is formed of an n-type semiconductor doped with n-type impurities on the substrate 110. Forming an active layer 132 with a nitride semiconductor having a quantum well structure on the first semiconductor layer 131 and a second semiconductor layer 133 having a p-type semiconductor doped with p-type impurities on the active layer 132. Forming a step).

In addition, when the substrate 110 and the photoelectric layer 130 are heterogeneous materials, before the step S100 of forming the photoelectric layer 130, the undoped semiconductor or the n-type semiconductor on the substrate 110 may be low temperature. The growth may further include forming the buffer layer 120. Here, the step of forming the buffer layer 120 is performed in an atmosphere containing low-temperature heat mainly growing the semiconductor material in a direction parallel to the growth surface.

In the forming of the first semiconductor layer 131, the forming of the active layer 132, and the forming of the second semiconductor layer 133, the semiconductor material is mainly grown in a direction perpendicular to the growth plane. It is carried out in an atmosphere containing high temperature heat. For example, when the step (S100) of forming the photoelectric layer 130 is performed by a metal organic chemical vapor deposition (MOCVD) method, the high temperature corresponds to 700 degrees Celsius to 1200 degrees Celsius, and the low temperature is 500 degrees Celsius to It may correspond to 700 degrees Celsius.

As shown in FIG. 7B, an ohmic contact layer 140 is formed by stacking a transparent conductive material on the second semiconductor layer 133 (S110), and as shown in FIG. 7C, as shown in FIG. 7C. ), Partial regions of the second semiconductor layer 133 and the active layer 132 are removed to expose the partial regions of the first semiconductor layer 131 (S120).

As shown in FIG. 7D, photonic crystals 141 including a plurality of holes arranged in a matrix at predetermined intervals are formed in another partial region of the ohmic contact layer 140 (S130). In this case, as shown in FIG. 2, the photonic crystal 141 has a circular or polygonal cross section and is arranged at regular intervals in the ohmic contact layer 140 in the remaining region except for the region in which the second electrode 162 is formed. . The photonic crystal 141 is shallower than the ohmic contact layer 140, or deeper than the ohmic contact layer 140 and shallower than the second semiconductor layer 133, or deeper than the second semiconductor layer 133. The semiconductor layer 131 may have a shallower depth.

As shown in FIGS. 7E and 7F, a cover layer 150 covering the photonic crystal 141 is formed on another partial region of the ohmic contact layer 140 (S140).

That is, as shown in FIG. 7E, the forming of the cover layer 150 (S140) includes preparing a flexible film 300 coated with graphite powder on one surface and on the ohmic contact layer 140. And repeating the process of attaching and separating the one surface of the flexible film 300. As a result, as shown in FIG. 7F, the cover layer 150 that blocks the inlet of the photonic crystal 141 is formed of graphene GRAPHENE on another partial region of the ohmic contact layer 140. .

As shown in FIG. 7G, a metal layer selected from a metal or a laminated structure or alloy including any one of Ni, Au, Pt, Ti, Al, and Cr or two or more is laminated, and patterned to expose the first layer. The first electrode 161 is formed on a portion of the semiconductor layer 131, and the second electrode 162 is formed on another portion of the ohmic contact layer 140.

Steps S100 to S150 are simultaneously performed on a plurality of chips on the wafer, and when formation of the first and second electrodes 161 and 162 is completed (S150), the chips are separated into individual chips (S160). .

As shown in FIG. 7H, the chips 100 separated individually are attached to the substrate 310 of the frame 310 by the adhesive layer 320, and the first chips extending from the inside of the frame 310 to the outside are connected to each other. And the second lead frames 331 and 332 and the first and second electrodes 161 and 162 of the chip 100 are bonded to the first and second leads 341 and 342, respectively. Thereafter, by filling the sealing material 200 in the cup 312 of the frame 310, the chip is packaged (S170). In this case, although the entire interior of the cup 312 is filled with only a single sealing material 200 in FIG. 7H, the sealing material 200 may be formed of a plurality of layer structures, or may be formed outside the sealing material 200. It is also possible to include a phosphor layer separately.

FIG. 7I is an enlarged view of a portion A of FIG. 7H, and as shown in FIG. 7I, even if the sealing material 200 is applied on the packaged chip 100, the sealing material 200 and the photonic crystal 141 may be separated from each other. Is separated by the cover layer 150, and as in the form of the chip 100, the photonic crystal 141 inside remains filled with air. Accordingly, the optical band gap due to the photonic crystal 141 may be maintained similar to the chip shape regardless of whether the package is packaged, that is, whether the sealant 200 is coated.

On the other hand, according to the manufacturing method of the light emitting device shown in Figure 6, before forming the first and second electrodes (S150), forming a photonic crystal (S130) and forming a cover layer (S140) Is carried out.

However, as shown in FIG. 8, according to the embodiment of the present invention, after forming the first and second electrodes (S131), forming the photonic crystal (S141) and forming the cover layer. (S151) can also be performed. In this case, as the cover layer is formed after forming the first and second electrodes (S131) (S151), the cover layer is also formed on the first and second electrodes that are previously formed. Therefore, in consideration of bonding with the lead and prevention of a short circuit between the first and second electrodes, forming the cover layer (S151) may remove a part of the cover layer formed on the first and second electrodes. It further comprises the step of removing.

As described above, the light emitting device according to the embodiment of the present invention includes a cover layer 150 that blocks the upper portion of the photonic crystal 141 and prevents the sealing material 200 from penetrating into the photonic crystal 141. Even if the sealant 200 is applied to the upper portion thereof, the inside of the photonic crystal 141 can be maintained as it is filled with air. Accordingly, even in the package form, the optical band gap due to the photonic crystal 141 can be maintained substantially in the same way as the chip state, and the increase in the light extraction efficiency due to the photonic crystal 141 can be maintained continuously.

The present invention described above is not limited to the above-described embodiment and the accompanying drawings, and various substitutions, modifications, and changes may be made without departing from the technical spirit of the present invention.

100: chip state light emitting device 110: substrate
120: buffer layer 130: photoelectric layer
131: first semiconductor layer 132: active layer
133: second semiconductor layer 140: ohmic contact layer
141: photonic crystal 150: cover layer
161 and 162: first and second electrodes 200: sealing material
300; Light emitting device 310 in package state: Frame
320: adhesive layers 331, 332: first and second lead frames
171, 172: first and second leads

Claims (13)

Board;
A photovoltaic layer including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on the substrate;
An ohmic contact layer formed of a transparent conductive material on the second semiconductor layer;
A first electrode formed on a portion of the first semiconductor layer exposed by removing portions of each of the ohmic contact layer, the second semiconductor layer, and the active layer;
A second electrode formed on the ohmic contact layer;
A photonic crystal comprising a plurality of holes arranged in the matrix at equal intervals in the ohmic contact layer; And
And a cover layer formed of a thin film covering the photonic crystal on the ohmic contact layer. The method of claim 1,
The cover layer is a light emitting device formed of graphene (graphene) that is a carbon atom layer. The method of claim 2,
The cover layer is a light emitting device formed by repeatedly contacting and separating the flexible film coated with graphite powder on the ohmic contact layer. The method of claim 1,
The upper portion including the cover layer and the first and second electrodes is covered with a sealing material. 5. The method of claim 4,
The light emitting device inside the plurality of holes is isolated from the sealing material by the cover layer. The method of claim 1,
The plurality of holes are formed in a shallower depth than the ohmic contact layer. The method of claim 1,
The plurality of holes penetrate the ohmic contact layer and the second semiconductor layer. The method of claim 1,
The plurality of holes penetrate the ohmic contact layer, the second semiconductor layer and the active layer. The method of claim 1,
The first semiconductor layer is formed of an n-type nitride semiconductor doped with a first impurity,
The active layer is formed of a nitride semiconductor of quantum well structure,
And the second semiconductor layer is formed of a p-type nitride semiconductor doped with a second impurity. Stacking a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate to form a photoelectric layer;
Stacking a transparent conductive material on the second semiconductor layer to form an ohmic contact layer;
Removing a portion of each of the ohmic contact layer, the second semiconductor layer, and the active layer to expose a portion of the first semiconductor layer; And
Forming a first electrode disposed on a portion of the exposed first semiconductor layer, and a second electrode disposed on the ohmic contact layer;
Before or after the step of forming the first electrode and the second electrode,
Forming a photonic crystal including a plurality of holes arranged in a matrix at another interval in another partial region of the ohmic contact layer; And
And forming a cover layer of a thin film covering the photonic crystal on the ohmic contact layer. The method of claim 10,
Forming the cover layer,
Preparing a flexible film coated with graphite powder on one surface; And
Repeating attaching / separating one surface of the flexible film on the ohmic contact layer to form the cover layer made of graphene, which is a carbon atom layer. The method of claim 11,
When the cover layer is formed after the first and second electrodes are formed, the forming of the cover layer may include:
And removing a part of the cover layer applied on the first electrode and the second electrode. The method of claim 10,
After mounting in the frame, further comprising the step of packaging by applying a sealing material on top of the cover layer and the first and second electrodes,
The inside of the plurality of holes is a manufacturing method of the light emitting device is isolated from the sealing material by the cover layer.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014087318A1 (en) * 2012-12-05 2014-06-12 Koninklijke Philips N.V. A color conversion arrangement, a lighting unit, a solid state light emitter package and a luminaire

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014087318A1 (en) * 2012-12-05 2014-06-12 Koninklijke Philips N.V. A color conversion arrangement, a lighting unit, a solid state light emitter package and a luminaire
US10094537B2 (en) 2012-12-05 2018-10-09 Philips Lighting Holding B.V. Color conversion arrangement, a lighting unit, a solid state light emitter package and a luminaire

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