KR20120106402A - Laser induced thermal imaging apparatus using polygon scanner for organic light emitting diode - Google Patents

Abstract

PURPOSE: A laser heat transcriber for an organic light emitting diode manufacture is provided to improve product reliability by improving uniformity of beam power and expanding beam radiating area. CONSTITUTION: A beam equalization part(130) controls the shape of incidence laser beam and outputs it to top hat shape. A polygon scanner(140) reflects the laser beam which is entered from the beam equalization part and changes it to laser beam of line shape. A mask outputs the laser beam of line shape to laser beam which is pattered as predetermined shape. A stage(180) supports a substrate member consisting of a donor film including a transfer layer. A controller control operation of a laser light source, the beam equalization part, the polygon scanner, and the stage. [Reference numerals] (110) Laser light source; (143) Flagon mirror driving part

Description

LASER INDUCED THERMAL IMAGING APPARATUS USING POLYGON SCANNER FOR ORGANIC LIGHT EMITTING DIODE}

The present invention relates to a laser thermal transfer apparatus for manufacturing an organic light emitting diode using a polygon scanner, and more particularly, to a laser thermoelectric for manufacturing an organic light emitting diode using a polygon scanner capable of enlarging an irradiation area of a laser beam and improving uniformity of beam power. It relates to four devices.

The organic light emitting diode, which is expected to be the next-generation flat panel display following LCD and PDP, is a display device using a phenomenon in which an organic compound, which is a light emitting body, is stacked and a current flows when a voltage is applied.

The LCD displays an image through selective transmission of light, and the organic light emitting diode displays an image through a mechanism called electroluminescence, whereas the PDP displays an image through plasma discharge. The organic light emitting material is inserted between two electrodes, and when a voltage is applied to each electrode, electrons and holes are injected into the organic layer at the anode and the cathode, respectively, and the electrons and holes are recombined. It stimulates them to generate light.

The organic light emitting diode is classified into a passive matrix (PM: Passive Matrix) that forms a pixel by simply crossing between an anode and a cathode according to a driving method, and an active matrix (AM: ACTIVE Matrix) that arranges a switching TFT in each pixel. OLEDs are emerging as next-generation flat panel displays with TFT-LCDs because of their ability to drive at low voltages below 15V and to design products with ultra-thin design.

1 is a schematic diagram showing a process of manufacturing an organic light emitting diode using a laser thermal transfer apparatus according to the prior art. Referring to FIG. 1, first, a substrate 10 having a predetermined element is provided, and then a donor film 20 having an organic layer 21 formed on the substrate 10 is laminated. A laser is irradiated to a predetermined portion of the donor film 20 through the laser irradiation device 30. In this case, the laser irradiation device 30 includes a light source device 31, a patterned mask 32, and a projection lens 33. Here, the laser generated from the light source device 31 is irradiated to the projection lens 33 through the patterned mask 32. Thereafter, the laser through the projection lens is refracted to irradiate the laser in the form of a pattern of the mask on the donor substrate to form an organic layer pattern on the substrate 10.

However, in the case of using the laser thermal transfer apparatus using only the optical system as in the prior art, it is difficult to configure the laser in the form of a line beam, and as the size of the substrate increases, the process time required to transfer the organic layer increases, resulting in an overall manufacturing cost. There was an increasing problem.

In addition, the power uniformity of the laser beam irradiated to the donor film passing through the mask is also not constant, so that the organic film layer is often not completely formed on the substrate, and there is a problem that product reliability is lowered.

The present invention is to overcome the above-mentioned conventional problems, the problem to be solved by the present invention is to expand the laser irradiation area of the laser beam and laser thermal transfer for manufacturing an organic light emitting diode using a polygon scanner that can improve the uniformity of the beam power It is for providing a device.

According to an exemplary embodiment of the present invention, a laser light source for generating a laser beam; A beam homogenizer (HOMOGENIZER) installed at a rear end of the laser light source and making the shape of the incident laser beam into a top hat shape; A polygon scanner installed at a rear end of the beam homogenizer, for converting the laser beam incident from the beam homogenizer and converting the laser beam into an arbitrary axially scanned line (LINE) shape laser beam; A mask for outputting the line-shaped laser beam as a laser beam patterned in a predetermined shape; And a stage formed on the substrate and the substrate, the substrate member comprising a donor substrate including a transfer layer, the stage being moved in two or more directions; And a control unit for controlling the operation of the laser light source, the beam homogenizing unit, the polygon scanner, and the stage, there is provided a laser thermal transfer apparatus for manufacturing an organic light emitting diode using a polygon scanner.

It is provided between the laser light source and the beam homogenizer, and further comprises a light guide unit for transmitting the laser beam output from the laser light source to the beam homogenizer.

The light guide portion is characterized in that the optical fiber.

The polygon scanner includes a polygon mirror having a plurality of reflective surfaces; And a polygon mirror driving unit which rotates while supporting the polygon mirror.

And a projection lens for controlling the focus of the patterned laser beam to be disposed on the donor film.

And a mirror unit configured to receive the patterned laser beam and reflect the reflected light to the projection lens.

The mask includes a light transmission region and a light blocking region formed in a predetermined shape, and the line-shaped laser beam is output as a patterned laser beam passing only the light transmission region.

The mask is characterized in that installed on the rear end of the polygon scanner.

A telecentric lens is installed between the polygon scanner and the mask, and outputs a laser beam in a line form incident from the polygon scanner in parallel.

The mask is characterized in that disposed on the donor film.

The laser light source is characterized in that for generating an infrared laser in the wavelength range of 800nm to 1100nm.

The control unit controls the movement of the stage to form the organic thin film layer pattern in the next column or row direction after the transfer of the transfer layer is completed in any column or row direction of the substrate to form the organic thin film layer pattern. .

The apparatus may further include a galvano scanner installed between the beam equalizer and the polygon scanner to convert a reflection angle of the laser beam incident from the light homogenizer and output the converted beam to the polygon scanner.

The galvano scanner includes: a galvano mirror that reflects a laser beam incident from the beam homogenizer; And a galvano mirror driving unit which rotates while supporting the galvano mirror.

As in the present invention, it is easy to configure the laser in the form of a line beam, and the laser beam can be irradiated to a wider area as compared with the prior art, thereby shortening the process time required to transfer the transfer layer of the donor substrate, thereby reducing the overall manufacturing cost. The effect of reducing this can be obtained.

In addition, since the power uniformity of the laser beam output through the laser thermal transfer apparatus is constant, the transfer layer is completely transferred onto the substrate, thereby improving the product reliability.

1 is a schematic diagram showing a process of manufacturing an organic light emitting diode using a laser thermal transfer apparatus according to the prior art.
2 is a schematic configuration diagram of a laser thermal transfer apparatus for manufacturing an organic light emitting diode using the polygon scanner according to the first embodiment of the present invention.
3 is a functional block diagram of the laser thermal transfer apparatus of FIG. 2.
4 is a schematic cross-sectional view of the substrate member.
5 is a schematic configuration diagram of a laser thermal transfer apparatus for manufacturing an organic light emitting diode using a polygon scanner according to a second embodiment of the present invention.
6 is a schematic configuration diagram of a laser thermal transfer apparatus for manufacturing an organic light emitting diode using a polygon scanner according to a third embodiment of the present invention.
7A and 7B are diagrams showing beam power uniformity of a scan area according to the prior art and the laser thermal transfer apparatus according to the present invention.
8A and 8B are diagrams showing power distribution along a cross section of the line beam output from the laser thermal transfer apparatus according to the present invention.
9 is a schematic configuration diagram of a laser thermal transfer apparatus for manufacturing an organic light emitting diode using the polygon scanner according to the fourth embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

2 is a schematic configuration diagram of a laser thermal transfer apparatus for manufacturing an organic light emitting diode using a polygon scanner according to a first embodiment of the present invention, and FIG. 3 is a functional block diagram of the laser thermal transfer apparatus of FIG.

2 and 3, the laser thermal transfer apparatus for manufacturing an organic light emitting diode using the polygon scanner according to the first embodiment of the present invention includes a laser light source 110, a light guide part 120, and a beam homogenizer 130. , A polygon scanner 140, a mask 150, a mirror unit 160, a lens unit 170, a stage 180, and a controller 190.

The laser light source 110 generates a laser beam required to transfer the transfer layer of the donor substrate 1200 onto the substrate 1100. At this time, the wavelength of the laser beam uses a laser beam in the infrared wavelength region. In this embodiment, the laser light source 110 uses an apparatus for generating an infrared laser in the wavelength range of 800 to 1100nm.

The laser beam output from the laser light source 110 is input to the beam uniformizing unit 130 through the light guide unit 120. The light guide unit 120 uses an optical fiber, and performs a function of inputting the beam homogenizer 130 of the laser beam output to the laser light source 110. When the light guide unit 120 is used, the laser light source 110 may be spaced apart from the remaining units including the beam homogenizer 130 at a long distance, and may be disposed in parallel with the light output control unit 130. This eliminates the need for increased instrument design freedom, freeing the layout and size of the system.

The beam homogenizer 130 is installed at the rear end of the laser light source 110, and uses a homogenizer to make the shape of the laser beam incident through the light guide unit 120 into a top hat shape. The shape outputs the uniform power of the hat shape.

The polygon scanner 140 is installed at the rear end of the beam homogenizer 130, and converts the laser beam incident from the light output adjusting unit 130 into a laser beam in a line form that is uniaxially scanned. Do this.

The polygon scanner 140 includes a polygon mirror 141 and a polygon mirror driver 143. In the present exemplary embodiment, eight reflective surfaces are arranged at equal intervals, and the polygon mirror driving unit 143 rotates while supporting the polygon mirror 141. Meanwhile, in the present exemplary embodiment, the polygon mirror 141 is configured to have eight reflective surfaces, but the number of reflective surfaces is not limited thereto and may be variously modified.

The polygon mirror 141 having a plurality of reflective surfaces is rotated at a high speed by the polygon mirror driver 143, and the angles of reflecting the laser light are formed differently according to the angle change of the reflective surfaces. As a result, the laser light reflected in different directions from the reflecting surface of the rotating polygon mirror 141 is scanned in a specific direction to form a laser beam in a line shape as a whole.

The mask 150 is installed at the rear end of the polygon scanner 140 and serves to output a line-shaped laser beam incident from the polygon scanner 140 as a laser beam patterned in a specific shape. The mask 150 is composed of a light transmission region and a light blocking region formed in a specific shape. The laser beam in the form of a line incident from the polygon scanner 140 passes through only the light transmission region of the mask 150 and is output as a patterned laser beam.

The mirror unit 160 is installed at the rear end of the mask 150 to reflect the patterned laser beam output from the mask 150 in a predetermined direction. In the present embodiment, the mirror unit 160 reflects the laser beam patterned by the following lens unit 170.

The lens unit 170 is installed at the rear end of the mask 150 and controls the upper focus of the patterned laser beam output through the mask 150 to be disposed on the donor substrate 1200. In the present embodiment, the lens unit 170 uses a projection lens.

The stage 180 supports the substrate member 1000 and is driven to move the substrate member 1000 in two axes, that is, in the x and y axes. When the scan is completed using the polygon scanner 140 to transfer the transfer layer in any column or row direction of the substrate 1100 to form the organic thin film layer pattern, the organic thin film layer pattern is then moved in the column or row direction. The stage 180 is moved to form. At this time, the moving direction of the stage 180 is moved in the direction crossing the extending direction of the line-shaped laser beam.

The controller 190 controls the operations of the laser light source 110, the beam uniformizer 130, the polygon scanner 140, and the stage 180. In particular, the controller 190 controls the operation of the polygon mirror driver 143 of the polygon scanner 140 to control the rotation speed of the polygon mirror 141. Then, a function of controlling the moving direction and the moving speed of the stage 180 is performed.

When forming a line-type laser beam incident on the mask using a polygon scanner as in the present invention, it is possible to generate a line-shaped laser beam over a wider area in a short time, the laser in the entire section of the line-shaped laser beam The power of the beam can be kept uniform. As a result, the patterned laser beam outputted through the mask is also irradiated with broadband on the donor substrate, and a transfer region of a wider area can be transferred onto the substrate in a short time.

4 is a schematic cross-sectional view of the substrate member.

Referring to FIG. 4, the substrate member 1000 disposed on the stage includes a substrate 1100 and a donor substrate 1200.

The substrate 1100 includes a base substrate 1110 and an electrode layer 1120 formed on the base substrate 1110. A thin film transistor, an insulating film, and a capacitor may be included between the electrode layer 1120 and the base substrate 1110. The donor substrate 1200 has a transfer layer 1220 formed on the donor base substrate 1210.

When the laser is irradiated onto the donor substrate 1200 using the laser thermal transfer apparatus according to the present invention, the transfer layer 1220 of the donor substrate 1200 is transferred onto the substrate 1100 on which the electrode layer 1120 is formed and is organic. A thin film layer pattern is formed.

The transfer layer 1220 of the donor substrate 1200 may be formed of one single layer film or one or more multilayer films selected from the group consisting of a hole injection layer, a hole transport layer, an organic light emitting layer, a hole suppression layer, an electron transport layer and an electron injection layer. . For example, the organic thin film layer may include a hole injection layer / organic emission layer, an organic emission layer / electron injection layer, a hole injection layer / organic emission layer / electron injection layer, a hole transport layer / organic emission layer / electron injection layer, a hole injection layer / hole transport layer / The organic light emitting layer / the electron injection layer or the hole injection layer / hole transport layer / organic light emitting layer / electron transport layer / electron injection layer may be formed in various forms.

5 is a schematic configuration diagram of a laser thermal transfer apparatus for manufacturing an organic light emitting diode using a polygon scanner according to a second embodiment of the present invention.

Referring to FIG. 5, the laser thermal transfer apparatus for manufacturing an organic light emitting diode using the polygon scanner according to the second embodiment of the present invention has a different configuration from the lens portion compared to the first embodiment, and the rest of the configuration is similar. The configuration will be described in detail.

The laser thermal transfer apparatus according to the present exemplary embodiment includes a laser light source 210, a light guide unit 220, a beam homogenizer 230, a polygon scanner 240, a mask 250, a mirror unit 260, and a lens unit ( 270, a stage 280, and a controller (not shown).

The lens unit 270 according to the present embodiment includes a telecentric lens 271 and a projection lens 273.

The telecentric lens 271 is installed between the polygon scanner 240 and the mask 250. The line-shaped laser beam output from the polygon scanner 240 is incident on the telecentric lens 271, and the telecentric lens 271 outputs the incident laser beam in parallel. The laser beam in the form of a line output in parallel through the telecentric lens 271 is transmitted through the light transmission region of the mask 250 and output as a patterned laser beam.

The mirror unit 260 is installed at the rear end of the mask 250 to reflect the patterned laser beam output from the mask 250 to the projection lens 273.

The projection lens 273 controls the focus of the patterned laser beam incident from the mirror unit 260 to be disposed on the donor substrate 1200.

6 is a schematic configuration diagram of a laser thermal transfer apparatus for manufacturing an organic light emitting diode using a polygon scanner according to a third embodiment of the present invention.

Referring to FIG. 6, the laser thermal transfer apparatus for manufacturing an organic light emitting diode using the polygon scanner according to the third embodiment of the present invention has the same position as the rest of the mask compared to the above embodiments, and thus, different configurations will be described below. The details will be mainly described.

The laser thermal transfer apparatus according to the present embodiment includes a laser light source 310, a light guide part 320, a beam homogenizer 330, a polygon scanner 340, a mask 350, a mirror part 360, and a lens part ( 370, a stage 380, and a controller (not shown).

The lens unit 370 according to the present embodiment includes a telecentric lens 371 and a projection lens 373.

The telecentric lens 371 is installed between the polygon scanner 340 and the mirror unit 360. The line-shaped laser beam output from the polygon scanner 340 is incident on the telecentric lens 371, and the telecentric lens 371 outputs the incident laser beam in parallel. The laser beam in the form of a line output in parallel through the telecentric lens 371 is incident on the mirror part 360.

The mirror unit 360 reflects the line-shaped laser beam output from the telecentric lens 371 to the projection lens 373. The projection lens 373 controls the focus of the laser beam in the form of a line incident from the mirror unit 360 to be disposed on the donor film 1200.

The mask 350 is disposed on the donor substrate 1200, and a line-shaped laser beam output from the projection lens 373 passes through the light transmitting region of the mask 350 to pattern the transfer layer of the donor film 1200. In the form of

7A and 7B illustrate beam power uniformity of a scan area according to the prior art and the laser thermal transfer apparatus according to the present invention, and FIGS. 8A and 8B illustrate the line beams output from the laser thermal transfer apparatus according to the present invention. The figure which shows power distribution along a cross section.

7A is a beam power uniformity for a specific region according to the laser thermal transfer apparatus according to the related art, and FIG. 7B is a beam power uniformity according to the laser thermal transfer apparatus using the polygon scanner according to the present invention. As can be seen from the comparison between FIG. 7A and FIG. 7B, since the laser thermal transfer apparatus using the polygon scanner according to the present invention can scan the laser beam in the form of a line over a wider area than the prior art, the same area is compared. The uniformity of the laser beam power according to the invention is relatively excellent.

8A and 8B, a profile showing the intensity of a laser beam according to a line width of 200 μm of a line-shaped laser beam is disclosed. It can be seen that the intensity of the laser beam is maintained at a constant level within 200 μm line width.

9 is a schematic configuration diagram of a laser thermal transfer apparatus for manufacturing an organic light emitting diode using the polygon scanner according to the fourth embodiment of the present invention.

9, the laser thermal transfer apparatus for manufacturing an organic light emitting diode using the polygon scanner according to the present embodiment includes a laser light source 410, a light guide part 420, a beam homogenizer 430, and a galvano scanner 435. , A polygon scanner 440, a mask 450, a mirror unit 460, a lens unit 470, a stage 480, and a controller (not shown).

The galvano scanner 435 is installed at the rear end of the beam homogenizer 430, and converts the reflection angle of the laser beam incident from the beam homogenizer 430 to output to the polygon scanner 440. The galvano scanner 435 includes a galvano mirror 436 and a galvano mirror driver 437. The galvano mirror 436 is rotatably installed to reflect light, and the galvano mirror driver 437 rotates the galvano mirror 436 while supporting the galvano mirror 436.

The galvano scanner 435 may adjust the path of the laser beam incident on the plurality of reflective surfaces of the polygon scanner 440. As a result, the scanning direction of the line-shaped laser beam output through the polygon scanner 440 may be shifted. For example, when scanned in the y-axis direction of the line-shaped laser beam, it is possible to move the line-shaped laser beam from side to side within a predetermined range based on the x-axis.

A polygon scanner 440 is installed at the rear end of the galvano scanner 435. The polygon scanner 440 performs a function of reflecting the laser beam incident from the galvano scanner 435 and converting the laser beam into a line-shaped laser beam that is scanned in one direction.

The lens unit 470 according to the present embodiment includes a telecentric lens 471 and a projection lens 473. The telecentric lens 471 is installed between the polygon scanner 440 and the mask 450. The line-shaped laser beam output from the polygon scanner 440 is incident on the telecentric lens 471, and the telecentric lens 471 outputs the incident laser beam in parallel. The laser beam in the form of a line output in parallel through the telecentric lens 471 is transmitted through the light transmission area of the mask 450 and output as a patterned laser beam.

The mirror unit 460 is installed at the rear end of the mask 450 to reflect the patterned laser beam output from the mask 450 to the projection lens 473. The projection lens 473 controls the focus of the patterned laser beam incident from the mirror portion 460 to be disposed on the donor substrate.

What has been described above is only an exemplary embodiment of a laser thermal transfer apparatus for manufacturing an organic light emitting diode using a polygon scanner according to the present invention, and the present invention is not limited to the above-described embodiment, and is claimed in the following claims. Likewise, without departing from the gist of the present invention, any person having ordinary knowledge in the field of the present invention will have the technical spirit of the present invention to the extent that various modifications can be made.

110: laser light source
120: light guide portion
130: beam homogenizer
140: Polygon Scanner
150: mask
160 mirror portion
170: lens unit
180: stage
190:

Claims (14)

In the laser thermal transfer apparatus for manufacturing an organic light emitting diode using a polygon scanner,
A laser light source for generating a laser beam;
A beam homogenizer installed at a rear end of the laser light source and controlling a shape of the incident laser beam to output a top hat shape;
A polygon scanner installed at a rear end of the beam homogenizer, for converting the laser beam incident from the beam homogenizer to convert the laser beam into a line-shaped laser beam scanned in any axial direction;
A mask for outputting the line-shaped laser beam as a laser beam patterned in a predetermined shape; And
A stage formed on the substrate and the substrate, the substrate member comprising a donor film including a transfer layer, the stage being moved in two or more directions; And
And a control unit for controlling the operation of the laser light source, the beam homogenizing unit, the polygon scanner, and the stage.
The method of claim 1,
A laser thermal transfer apparatus for manufacturing an organic light emitting diode using a polygon scanner, the light guide unit may be installed between the laser light source and the beam homogenizer and transmit the laser beam output from the laser light source to the beam homogenizer. .
The method of claim 2,
The optical guide unit is a laser thermal transfer apparatus for manufacturing an organic light emitting diode using a polygon scanner, characterized in that the optical fiber.
The method of claim 1,
The polygon scanner,
Polygon mirror having a plurality of reflective surfaces; And
Laser thermal transfer apparatus for manufacturing an organic light emitting diode using a polygon scanner, characterized in that it comprises a polygon mirror driving unit for rotating while supporting the polygon mirror.
The method of claim 1,
And a projection lens for controlling an upper focus of the patterned laser beam to be disposed on the donor film.
The method of claim 5,
And a mirror unit configured to receive the patterned laser beam and reflect the light into the projection lens.
The method of claim 1,
The mask is composed of a light transmission region and a light blocking region formed in a predetermined shape, and the line-shaped laser beam is transmitted through only the light transmission region and is output as a patterned laser beam. Laser thermal transfer device for diode manufacturing.
The method of claim 1,
The mask is a laser thermal transfer apparatus for manufacturing an organic light emitting diode using a polygon scanner, characterized in that installed in the rear end of the polygon scanner.
The method of claim 1,
And a telecentric lens disposed between the polygon scanner and the mask and outputting in parallel a laser beam in a line form incident from the polygon scanner. Device.
The method of claim 1,
The mask is disposed on the donor film, the laser thermal transfer apparatus for manufacturing an organic light emitting diode using a polygon scanner.
The method of claim 1,
The laser light source is a laser thermal transfer apparatus for manufacturing an organic light emitting diode using a polygon scanner, characterized in that for generating an infrared laser in the wavelength range of 800nm to 1100nm.
The method of claim 1,
The control unit controls the movement of the stage to form the organic thin film layer pattern in the next column or row direction after the transfer of the transfer layer is completed in any column or row direction of the substrate to form the organic thin film layer pattern. Laser thermal transfer device for manufacturing an organic light emitting diode using a polygon scanner, characterized in that.
The method of claim 1,
And a galvano scanner installed between the beam homogenizer and the polygon scanner to convert a reflection angle of the laser beam incident from the beam homogenizer and output the converted laser beam to the polygon scanner. Laser thermal transfer device for diode manufacturing.
The method of claim 13,
The galvano scanner,
A galvano mirror which reflects a laser beam incident from the beam homogenizer; And
A laser thermal transfer apparatus for manufacturing an organic light emitting diode using a polygon scanner, comprising a galvano mirror driving unit configured to rotate while supporting the galvano mirror.

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