KR20120102006A - Anisotropic conductive film, method of manufacturing anisotropic conductive film, connecting method of electronic component, anisotropic conductive connected structure - Google Patents

Abstract

PURPOSE: An anisotropic conductive film, a manufacturing method thereof, a connecting method of an electronic component, and an anisotropic conductive connection body are provided to form a multi-layered structure by placing the anisotropic conductive film between a chip component and an electrode part of a substrate. CONSTITUTION: An anisotropic conductive film(1) comprises a conductive particle containing layer, an insulation resin layer, and an elastic spacer(4). A chip component is mounted in an electrode part(11). The insulation resin layer contains a film forming resin, a thermosetting resin, a curing agent, and a conductive particle. The elastic spacer is placed on the border of the conductive particle containing layer and the insulation resin layer. A bump(13) is connected to the electrode part of a substrate.

Description

ANISOTROPIC CONDUCTIVE FILM, METHOD OF MANUFACTURING ANISOTROPIC CONDUCTIVE FILM, CONNECTING METHOD OF ELECTRONIC COMPONENT, ANISOTROPIC CONDUCTIVE CONNECTED STRUCTURE}

This invention relates to the anisotropic conductive film which makes anisotropic conductive connection of an electronic component etc. a circuit board, the manufacturing method of this anisotropic conductive film, the connection method using this anisotropic conductive film, and the anisotropic conductive connection body using this anisotropic conductive film.

As a technique of mounting a chip component on a board | substrate, the flip chip mounting method of mounting a chip component on a board | substrate in what is called a face-down state, for example is widely used. This flip chip mounting method is a method of forming an electrode called a bump as a terminal electrode of a chip component, arranging the bump so as to face the electrode portion of the substrate, and electrically connecting them collectively.

In the flip chip mounting method, electrical and mechanical connection by an anisotropic conductive film (ACF) is aimed for the purpose of improving connection reliability. As shown in FIG. 5, the anisotropic conductive film 50 disperse | distributes electroconductive particle 52 in insulating resin 51 which functions as an adhesive agent. The chip part 55 opposes the active surface in which the some bump 56 is formed, with the electrode part 58 of the board | substrate 57, and is electrically connected through the anisotropic conductive film 50. FIG.

Specifically, in the substrate 57, the anisotropic conductive film 50 is disposed on the electrode portion 58 on which the chip component 55 is mounted, and the active surface of the chip component 55 is positioned relative to the electrode portion 58. After fitting, it is thermally pressurized from the upper surface of the chip component 55 by a heating bonder (not shown).

Thereby, the chip component 55 and the board | substrate 57 remove | exclude resin 51 from between the bump 56 and the electrode part 58, and clamp the electroconductive particle 52, and electrical connection is aimed at. . In the chip component 55 and the board | substrate 57, the state in which the electroconductive particle 52 was disperse | distributed in insulating resin 51 is maintained in the part without bump 56, and the electrically insulated state is maintained, Electrical conduction is achieved only at the portion where the bumps 56 are present.

According to the flip chip mounting method using the anisotropic conductive film 50, as mentioned above, it is possible to collectively electrically connect between many electrodes, and it is not necessary to connect between electrodes one by one like a wire bonding like bonding. In addition, it is relatively easy to cope with miniaturization of terminal electrodes, narrow pitch, and the like accompanying high density mounting.

By the way, the chip component 55 is heat-pressed by a heat bonder, and may generate curvature as shown in FIG. As the chip component 55 is warped, electrical connection between the bump 56 and the electrode portion 58 at the outer edge of the active surface becomes insufficient. In particular, when there are a plurality of bumps on one side of the chip component 55, the inner bumps 56a are close to the center point (supporting point) of the warp, so that a part of the bumps floats, so that the deformation of the conductive particles is insufficient. Since bump 56b is completely separated from bump and electrode part 58, deformation of electroconductive particle does not generate | occur | produce connection defect. Moreover, the chip part 55 generate | occur | produces a chip crack when the grade of curvature becomes large.

For this reason, the technique which contains a spacer in the anisotropic conductive film 50 and clamps a spacer between the active surface of the chip component 55 and the electrode part 58 of the board | substrate 57 is proposed (refer patent document 1). ).

Japanese Unexamined Patent Publication No. 2000-323523

However, as described in Patent Literature 1, even when the spacer is sandwiched between the active surface of the chip component 55 and the electrode portion 58 of the substrate 57, depending on the hardness and particle diameter of the spacer, the chip There is a risk of causing cracks and warpage in the component 55, and the bump 56 and the electrode portion 58 may be separated from each other, resulting in an increase in conduction resistance.

Therefore, this invention is an anisotropic conductive film which can prevent the bending and a crack of a chip component reliably by containing a spacer in an anisotropic conductive film, the manufacturing method of this anisotropic conductive film, and the connection of the electronic component using this anisotropic conductive film. It is an object to provide an anisotropic conductive connector using the method and this anisotropic conductive film.

In order to solve the problem mentioned above, the anisotropic conductive film which concerns on this invention forms the multilayered structure in which the electroconductive particle containing layer and the insulating resin layer were laminated | stacked, and it has an elastic spacer at the boundary of the said electroconductive particle containing layer and the said insulating resin layer, The elastic spacer has a hardness (20% K value) of 20 to 500 kgf / mm 2 and a particle size D of 10 to 50 µm.

Moreover, the manufacturing method of the anisotropic conductive film which concerns on this invention is a process of forming one of an electroconductive particle containing resin layer and an insulating resin layer in a base material, and hardness (20% K value) is 20-500 kgf / mm <2>, and a particle diameter The process of arrange | positioning the elastic spacer whose D is 10-50 micrometers on one surface of the electroconductive particle containing resin layer and insulating resin layer apply | coated to the said base material, the electroconductive particle containing resin layer and insulating resin layer in which the said elastic spacer was arrange | positioned It has a process of arrange | positioning an elastic spacer at the boundary of the said electroconductive particle content layer and the said insulating resin layer by forming the other of electroconductive particle containing resin layer and insulating resin layer on one surface of the above.

Moreover, the connection method of the electronic component which concerns on this invention is a process of arrange | positioning an anisotropic conductive film to the electrode part to which an electronic component is connected, and the process of arrange | positioning an electronic component through the said anisotropic conductive film to the said electrode part, And a connection step for connecting the electronic component to the electrode portion, wherein the anisotropic conductive film has a multilayer structure in which conductive particle-containing layers and insulating resin layers are laminated, and is elastic at a boundary between the conductive particle-containing layer and the insulating resin layer. It has a spacer, The said elastic spacer is 20-500 kgf / mm <2> in hardness (20% K value), and particle diameter D is 10-50 micrometers.

Moreover, the anisotropic conductive connector which concerns on this invention has an electronic component, the electrode part with which the said electronic component was electrically connected, and the electroconductive adhesive layer which electrically connects the said electronic component to the said electrode part, The said electroconductive adhesive layer is electroconductive particle It has a multilayer structure in which a containing layer and an insulating resin layer are laminated | stacked, and it has an elastic spacer at the boundary of the said electroconductive particle content layer and the said insulating resin layer, The said elastic spacer has a hardness (20% K value) of 20-500 kgf / mm <2>. And particle size D are 10 to 50 µm.

According to the present invention, the bending of the electronic component can be prevented by the elastic spacer, and stable conduction can be achieved. At this time, according to the present invention, the hardness (20% K value) of the elastic spacer is set to 20 to 500 kgf / mm 2, and the particle size D is set to 10 to 50 μm, whereby the warping of the electronic component by thermal pressurization by a heat bonder is performed. In addition, it is possible to reliably prevent the crack of the electronic component without giving an excessive load to the electronic component.

1 is a cross-sectional view showing an anisotropic conductive film according to the present invention.
2 is a cross-sectional view showing the anisotropic conductive connector according to the present invention.
3 is a plan view showing a conductive particle-containing layer on which an elastic spacer is disposed.
4 (a) is a cross-sectional view showing an anisotropic conductive film in which the surface of the elastic spacer is in contact with the conductive particle-containing layer 100%, and 4 (b) is a cross-sectional view showing an anisotropic conductive film in which the surface of the elastic spacer is in contact with the insulating resin layer 100%. .
It is sectional drawing which shows the structure which bonded the conventional chip component and board | substrate with the anisotropic conductive film.
6 is a cross-sectional view showing a state where warpage occurs in the chip component.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described in detail, referring drawings. The anisotropic conductive film 1 shown as a specific example of this invention has an electroconductive particle content layer 2, the insulating resin layer 3, and the elastic spacer 4 as shown in FIG. The anisotropic conductive film 1 is, for example, a driving IC (integrated circuit) for controlling pixels in the manufacture of an LCD (Liquid Crystal Display) panel, or so-called COG (Chip on) for bonding a flexible printed wiring board to a glass substrate. It can be used for Glass or F0G (Film on Glass).

As shown in FIG. 2, the board | substrate 10 is various circuit boards, such as a glass substrate, a rigid board | substrate, and a flexible board | substrate, for example, and the electrode part 11 in which the chip component 12 is mounted is formed. Moreover, the chip component 12 is mounting components, such as a semiconductor chip and a capacitor, for example, and the bump 13 connected to the electrode part 11 of the board | substrate 10 is formed.

[Anisotropic Conductive Film (1)]

The anisotropic conductive film 1 is interposed between the electrode portion 11 of the substrate 10 and the chip component 12, whereby the bump 13 of the chip component 12 and the electrode portion 11 of the substrate 10. The elastic spacer 4 is sandwiched between the chip component 12 and the electrode portion 11 while connecting the conductive particles through each other. Thereby, the anisotropic conductive film 1 suppresses the curvature of the chip component 12, even when the chip component 12 is heat-pressed by a heat bonder, and the chip component 12 and the board | substrate 10 electrode part 11 Can improve the connection reliability.

The electroconductive particle content layer 2 contains film formation resin, a thermosetting resin, a hardening | curing agent, and electroconductive particle. The insulating resin layer 3 contains a film forming resin, a thermosetting resin, and a hardening | curing agent. The elastic spacer 4 is formed at the boundary between the electroconductive particle containing layer 2 and the insulating resin layer 3.

The anisotropic conductive film 1 shown in FIG. 1 has two layers formed by laminating the elastic spacer 4 by the insulating resin layer 3 and the electroconductive particle containing layer 2 which were formed in peeling films, such as PET (Polyethylene Terephthalate), respectively. Structure. The anisotropic conductive film 1 which concerns on this invention may be a multilayer structure of three or more layers provided with the insulating resin layer 3 and the electroconductive particle content layer 2 at least.

[Conductive Particle Containing Layer (2)]

The electroconductive particle content layer 2 contains film formation resin, a thermosetting resin, a hardening | curing agent, and electroconductive particle.

The film-forming resin corresponds to a high molecular weight resin having an average molecular weight of 10000 or more, and is preferably an average molecular weight of about 10000 to 80000 from the viewpoint of film formation. Examples of the film-forming resins include various resins such as phenoxy resins, polyester urethane resins, polyester resins, polyurethane resins, acrylic resins, polyimide resins, butyral resins, and these may be used alone, You may use in combination of 2 or more type. Among these, a phenoxy resin is used preferably from a viewpoint of a film formation state, connection reliability, etc.

A thermosetting resin may be used individually by an epoxy resin, the liquid epoxy resin which has fluidity at normal temperature, etc., or may mix and use 2 or more types. As an epoxy resin, bisphenol-A epoxy resin, bisphenol F-type epoxy resin, novolak-type epoxy resin, various modified epoxy resins, such as rubber and a urethane, are illustrated, These may be used independently and mixes 2 or more types May be used. Moreover, as a liquid epoxy resin, a bisphenol-type epoxy resin, a naphthalene type epoxy resin, a biphenyl type epoxy resin, a phenol novolak-type epoxy resin, a stilbene type epoxy resin, a triphenol methane type epoxy resin, a phenol aralkyl type epoxy resin, A naphthol type epoxy resin, a dicyclopentadiene type epoxy resin, a triphenylmethane type epoxy resin, etc. can be used, These may be used independently, and may mix and use 2 or more types.

There is no restriction | limiting in particular in a hardening | curing agent, According to the objective, it can select suitably, For example, the latent hardening | curing agent activated by heating, the latent hardening | curing agent which generate | occur | produces free radical by heating, etc. can be used. As a latent hardener activated by heating, cationic hardeners, such as anionic hardeners, such as a polyamine and imidazole, and a sulfonium salt, etc. are mentioned, for example.

Electroconductive particle can be used if it is an electrically good conductor, For example, what coat | covered the particle | grains which consist of metal powders, such as copper, silver, nickel, and resin with the said metal is mentioned. Moreover, you may use what coat | covered the whole surface of electroconductive particle with the insulating film. The electroconductive particle can use a particle diameter of 1-10 micrometers, and can use a 3-5 micrometers thing suitably.

As another addition composition, it is preferable to add a silane coupling agent. As a silane coupling agent, an epoxy type, an amino type, a mercapto sulfide type, a ureide type, etc. can be used. Among these, in this embodiment, an epoxy silane coupling agent is used preferably. Thereby, the adhesiveness in the interface of an organic material and an inorganic material can be improved. Moreover, you may add an inorganic filler. As an inorganic filler, silica, talc, titanium oxide, calcium carbonate, magnesium oxide, etc. can be used, The kind of inorganic filler is not specifically limited. By content of an inorganic filler, fluidity | liquidity can be controlled and particle capture rate can be improved. Moreover, a rubber component etc. can also be used suitably for the purpose of alleviating the stress of a joined body.

When mix | blending each structural component of these electroconductive particle content layer 2, as an organic solvent which melt | dissolves these, toluene, ethyl acetate, these mixed solvents, and other various organic solvents can be used. Moreover, it is preferable that melt viscosity of the electroconductive particle content layer 2 is higher than the melt viscosity of the insulating resin layer 3 from a viewpoint of improving the particle | grain capture rate of electroconductive particle.

[Insulating resin layer (3)]

The insulating resin layer 3 contains a film forming resin, a thermosetting resin, and a hardening | curing agent. The same thing as the electroconductive particle content layer 2 can be used for film formation resin, a thermosetting resin, and a hardening | curing agent.

Moreover, it is preferable that the insulating resin layer 3 adds a silane coupling agent similarly to electroconductive particle content layer 2 as another addition composition. As a silane coupling agent, an epoxy type, an amino type, a mercapto sulfide type, a ureide type, etc. can be used. Among these, in this embodiment, an epoxy silane coupling agent is used preferably. Thereby, the adhesiveness in the interface of an organic material and an inorganic material can be improved.

In addition, the insulating resin layer 3 may add an inorganic filler. As an inorganic filler, silica, talc, titanium oxide, calcium carbonate, magnesium oxide, etc. can be used, The kind of inorganic filler is not specifically limited. By content of an inorganic filler, fluidity | liquidity can be controlled and particle capture rate can be improved. Moreover, the insulating resin layer 3 can also be used suitably also for the purpose of relieving the stress of a joined body, such as a rubber component.

In addition, from the viewpoint of improving the particle trapping rate of the conductive particles, the insulating resin layer 3 is preferably lower in melt viscosity than the conductive particle-containing layer 2.

[Elastic spacer 4]

The elastic spacer 4 formed at the boundary between the electroconductive particle containing layer 2 and the insulating resin layer 3 consists of a resin-based elastic body which is spherical and has insulation, a buffer, and heat resistance, for example. When the elastic spacer 4 is mounted on the electrode part 11 of the board | substrate 10, the elastic spacer 4 prevents the curvature from generate | occur | producing in the chip part 12 by the heat pressurization process by a heat bonder. will be.

The elastic spacer 4 can prevent warpage of the chip component 12 even by thermal pressurization by a heat bonder, and has a hardness that does not impart excessive load to the chip component 12. For example, The hardness (20% K value) is 20 to 500 kgf / mm 2, and preferably 100 to 400 kgf / mm 2. The elastic spacer 4 cannot resist bending of the chip component 12 when the hardness (20% K value) is smaller than 20 kgf / mm 2, and prevents warpage of the chip part 12, but rather exceeds 500 kgf / mm 2. Excessive load is applied to the chip component 12, which may cause chip cracking.

Moreover, the elastic spacer 4 can prevent the bending of the chip component 12 even by the thermal pressurization by a heating bonder according to the height of the bump 13 of the chip component 12, and the bump 13 It has a particle diameter which does not inhibit the connection of the electrode part 11, and, for example, the particle diameter D is 10-50 micrometers, while bump height H is 15 micrometers. When the elastic spacer 4 has a particle diameter D of 10 to 50 µm, the ratio H / D to the height H of the bumps 13 of the chip component 12 is 0.3 to 1.5. Thereby, the elastic spacer 4 suppresses the curvature of the chip component 12, and does not inhibit the connection of the bump 13 and the electrode part 11, either.

[Film Production Method]

Next, the manufacturing method of the anisotropic conductive film 1 is demonstrated. The anisotropic conductive film 1 in this embodiment forms the electroconductive particle containing layer 2 on a peeling film, forms the insulating resin layer 3 on the peeling film similarly, and electroconductive particle containing layer 2 After arrange | positioning and forming the elastic spacer 4 on the surface of, it is manufactured by laminating the insulating resin layer 3 from the elastic spacer 4 top.

The release film is, for example, made of a laminated structure in which a release agent such as silicone is applied to PET (Poly Ethylene Terephthalate), OPP (0riented Polypropylene), PMP (Poly-4-methylpentene-1), PTFE (Polytetrafluoroethylene), etc. While preventing the drying of the electroconductive particle containing layer 2 and the insulating resin layer 3, these shapes are maintained. The peeling film is formed in the shape according to the shape of the electrode part 11 of the board | substrate 10, for example, rectangular shape.

The anisotropic conductive film 1 apply | coats the resin composition which comprises the electroconductive particle content layer 2 on this peeling film using a bar coater, a coating device, etc., and makes it dry using a hot oven, a heat drying apparatus, etc. This forms the electroconductive particle containing layer 2 of predetermined thickness, for example, 10 micrometers thick. The electroconductive particle content layer 2 is formed in the rectangular shape, for example which is the same shape of the peeling film 5.

Next, similarly to the electroconductive particle content layer 2, the resin composition which comprises the insulating resin layer 3 is apply | coated and dried on a peeling film, and the insulating resin layer 3 of predetermined thickness, for example, 10 micrometers thick, ).

Subsequently, as shown in FIG. 3, the predetermined position of the electroconductive particle containing layer 2 except the connection position of the bump 13 and the electrode part 11, for example, in the center part of the width direction, several over the longitudinal direction The elastic spacers 4 are arranged at predetermined intervals. Under the present circumstances, the elastic spacer 4 is arrange | positioned so that the whole may not be buried in the electroconductive particle containing layer 2, and 20-40% of the surface may contact.

Next, the insulating resin layer 3 is laminated from the elastic spacer 4. At this time, 20-40% of the surface is in contact with the electroconductive particle containing layer 2, and 60-80% of the surface is in contact with the insulating resin layer 3 at this time.

Thus, the anisotropic conductive film 1 is arrange | positioned so that 20-40% of the surface may be buried in the electroconductive particle containing layer 2, and the anisotropic conductive film 1 is 60? Of the surface in the insulating resin layer 3? Since 80% is formed so that it may be buried, the elastic spacer 4 is arranged in the region where the thickness of the electroconductive particle containing layer 2 and the insulating resin layer 3 is arrange | positioned, and the elastic spacer 4 is formed, The same applies to a region that is not present and can be made to have a uniform resin thickness throughout.

That is, when the elastic spacer 4 is buried in any of the electroconductive particle containing layer 2 or the insulating resin layer 3 until 100% of a surface contacts, the said anisotropic conductive film 1 is said elasticity by lamination process, Resin of the area | region in which the spacer 4 was arrange | positioned is excluded by surrounding, The resin thickness of the area | region in which the elastic spacer 4 was arrange | positioned is thin, and the periphery becomes thick.

In the anisotropic conductive film 1 according to the present invention, since the elastic spacer 4 is disposed at the boundary between the conductive particle-containing layer 2 and the insulating resin layer 3, the resin thickness can be uniformly formed throughout. Can be.

[How to connect chip parts]

Next, the connection method of the chip component 12 using the anisotropic conductive film 1 mentioned above, and an anisotropic conductive connection body are demonstrated. In the connection method of the chip component 12 in this embodiment, the anisotropic conductive film 1 is affixed on the electrode part 11 of the board | substrate 10, and the chip component 12 on this anisotropic conductive film 1 is carried out. ) Is temporarily placed. Subsequently, the anisotropic conductive film 1 is thermally cured by thermally pressurizing from the chip component 12 by a heat bonder, and the bumps 13 of the electrode portion 11 and the chip component 12 of the substrate 10 are thermally cured. To connect. Thereby, the anisotropic conductive connection body with which the electrode part 11 of the board | substrate 10 and the bump 13 of the chip component 12 were connected through the electroconductive particle dispersed in the anisotropic conductive film 1 is obtained.

In the process of sticking the anisotropic conductive film 1 to the board | substrate 10, the peeling film which contacts the electroconductive particle containing layer 2 is peeled off, and the electroconductive particle containing layer 2 is arrange | positioned at the electrode part 11. Subsequently, it heat-presses at the temperature of the grade in which the hardening | curing agent is not hardened | cured from the peeling film image which contact | connects the insulating resin layer 3 at all. Thereafter, the peeling film is peeled off, the chip component 12 is mounted from the insulating resin layer 3 side, and is thermally pressurized from the chip component 12 on a non-illustrated heating bonder.

Here, the anisotropic conductive film 1 has the insulating resin layer 3 in the upper layer in which the bump 13 which does not contain electroconductive particle is embedded, and the electroconductive particle containing layer 2 is in the lower layer which contact | connects the electrode part 11 here. Formed. Therefore, the chip component 12 pushes out the insulating resin layer 3 in which the bump 13 shows fluidity by heating, and the bump 13 interposes the electroconductive particle of the electroconductive particle containing layer 2 through an electrode part ( 11) is connected.

In the part without the bump 13, the chip component 12 and the board | substrate 10 hold | maintain the state which the electroconductive particle disperse | distributed in insulating resin, and the electrically insulated state are maintained, Electrical conduction is achieved only in the part.

Moreover, the elastic spacer 4 is arrange | positioned along the substantially center part of the chip component 12 except the area | region where the bump 13 and the electrode part 11 are connected, and the anisotropic conductive film 1 is formed, for example. This elastic spacer 4 prevents the central portion of the chip component 12 from bending. Therefore, since the chip part 12 is substantially bent at the center part, the bump 13 formed in the outer edge is not separated by the electrode part 11, and stable conduction can be obtained.

At this time, since the hardness (20% K value) of the elastic spacer 4 is set to 20-500 kgf / mm <2>, the anisotropic conductive film 1 ensures the curvature of the chip component 12 by the heat press by a heat bonder. In addition, the chip component 12 can be prevented from being excessively loaded and chip cracking can be prevented.

In addition, in the anisotropic conductive film 1, the elastic spacer 4 has a predetermined particle size corresponding to the height of the bump 13 of the chip component 12, and for example, the bump height H is 15 μm. The particle diameter D is set to 10 to 50 µm. Thereby, in the anisotropic conductive film 1, the ratio H / D of the particle diameter D of the elastic spacer 4 and the height H of the bump 13 of the chip component 12 is 0.3 to 1.5, and the chip component ( The curvature of 12 is suppressed and the connection of the bump 13 and the electrode part 11 is not inhibited.

Example 1

EMBODIMENT OF THE INVENTION Hereinafter, the Example of this invention is described. In the Example, the hardness (20% K value) of the elastic spacer 4 contained in the electroconductive particle containing layer 2, the particle diameter D with respect to bump height H, and the elastic spacer 4 contact with the electroconductive particle containing layer 2 Using the sample of the anisotropic conductive film in which the ratio of the surface differs, it mounted by heat-pressing a chip component to the electrode part on a glass substrate. And about each sample, the curvature of the chip component, initial conduction resistance ((ohm)), and conduction resistance ((ohm)) after high temperature, high humidity test (85 degreeC-85% RH 500hr) were investigated. The bump height H of a step part unified all to 15 micrometers.

In addition, the curvature of a chip component is scanned from the lower side of a glass substrate using a stylus type surface roughness meter (brand name: SE-3, Inc. make), the glass substrate surface after chip component mounting is measured, and both ends of a chip component are measured. The maximum value when using as a base line was calculated | required. As an evaluation index, when curvature was less than 17 micrometers, it was set as (circle) as practically no problem, and what was curvature was 17 micrometers or more was x.

The sample of each anisotropic conductive film is a two-layer structure which consists of an electroconductive particle content layer and an insulating resin layer, or a one-layer structure which consists only of an electroconductive particle content layer, and an electroconductive particle content layer,

Phenoxy resin (YP-50: manufactured by Shinnitetsu Chemical Co., Ltd.); 60 parts by mass

Epoxy resin (EP828: manufactured by Mitsubishi Chemical Corporation); 35 parts by mass

Curing agent (Si-80L: manufactured by Sanshin Chemical Industry Co., Ltd.); 4 parts by mass

Silane Coupling Agent (A-187: Momentive, Performance, Materials, Japan Joint Company): 1 part by mass

Electroconductive particle; (AUL704: Sekisui Chemical Co., Ltd. product): Dispersed at 50000 pce / mm2

Was mixed to adjust the resin composition.

In addition, the insulating resin layer,

Phenoxy resin (YP-50: manufactured by Shinnitetsu Chemical Co., Ltd.); 55 parts by mass

Epoxy resin (EP828: manufactured by Mitsubishi Chemical Corporation); 40 parts by mass

Curing agent (Si-80L: manufactured by Sanshin Chemical Industry Co., Ltd.); 4 parts by mass

Silane coupling agent (A-187: manufactured by Momentive, Performance, Materials, Japan); 1 part by mass

Was mixed to adjust the resin composition.

Example 1 is a two-layer structure which consists of an electroconductive particle content layer and an insulating resin layer, 20 kgf / mm <2> of hardness (20% K value) of an elastic spacer, 30 micrometers of particle diameters D, bump height H (= 15 micrometers), The ratio of the surface of the elastic spacer in contact with the conductive particle-containing layer before providing the ratio (H / D) of the particle diameter D to 0.5 and thermal pressure was 30%.

Example 2 was set as the structure similar to Example 1 except having set the hardness (20% K value) of the elastic spacer to 100 kgf / mm <2>.

Example 3 was set as the structure similar to Example 1 except having set the hardness (20% K value) of an elastic spacer to 300 kgf / mm <2>.

Example 4 was set as the structure similar to Example 1 except having set the hardness (20% K value) of the elastic spacer to 400 kgf / mm <2>.

Example 5 was set as the structure similar to Example 1 except having made hardness (20% K value) of an elastic spacer into 500 kgf / mm <2>.

Example 6 is a two-layered structure composed of a conductive particle-containing layer and an insulating resin layer, the hardness (20% K value) of the elastic spacer is 300 kgf / mm 2, the particle diameter D is 10 μm, the bump height H (= 15 μm) and The ratio of the surface of the elastic spacer in contact with the electroconductive particle containing layer in providing the ratio (H / D) of particle diameter D to 1.5 and heat pressurization was 30%.

Example 7 was set as the structure similar to Example 6 except having made particle diameter D 20 micrometers, bump height H (= 15 micrometers), and ratio (H / D) of particle diameter D to 0.75.

Example 8 was set as the structure similar to Example 6 except having made particle diameter D 40 micrometers, bump height H (= 15 micrometers), and ratio (H / D) of particle diameter D to 0.38.

Example 9 was set as the structure similar to Example 6 except having set particle diameter D to 50 micrometers, bump height H (= 15 micrometers), and ratio (H / D) of particle diameter D to 0.3.

Example 10 was set as the structure similar to Example 3 except having made the ratio of the surface of the elastic spacer which contact | connects the electroconductive particle content layer in 20% before providing heat_pressure.

Example 11 was set as the structure similar to Example 3 except having made the ratio of the surface of the elastic spacer which contact | connects the electroconductive particle content layer to 40% before providing for thermal pressure.

Comparative Example 1 had the same configuration as Example 1 except that the hardness (20% K value) of the elastic spacer was 700 kgf / mm 2.

Comparative Example 2 was a two-layer structure composed of an electroconductive particle-containing layer and an insulating resin layer, and was configured to contain no elastic spacers.

Comparative Example 3 was a one-layer structure composed of only the conductive particle-containing layer, and contained the same elastic spacer as in Example 3, and the ratio of the surface of the elastic spacer in contact with the conductive particle-containing layer before being applied to thermal pressure was 100%. .

The comparative example 4 has the structure similar to Example 3 except the ratio of the surface of the elastic spacer which contact | connects the electroconductive particle containing layer before providing to thermal pressure is 0%, ie, all the elastic spacers were embedded in the insulating resin layer. It was made.

In Comparative Example 5, the ratio of the surface of the elastic spacer in contact with the conductive particle-containing layer before being applied to the thermal pressure is 100%, that is, all the elastic spacers are embedded in the conductive particle-containing layer and are not in contact with the insulating resin layer. Other than that was set as the structure similar to Example 3.

Comparative Example 6 had the same configuration as Example 6 except that the particle diameter D was 60 µm and the bump height H (= 15 µm) and the ratio (H / D) of the particle diameter D were 0.25.

The results are shown in Table 1. As shown in Table 1, in Examples 1-5 in which the hardness (20% K value) of the elastic spacer is 20 to 500 kgf / mm 2, the warpage of the chip component is at most 16.3 μm, and the initial conduction resistance is 1.8 Ω or less. The conduction resistance after the high temperature and high humidity test (85 ° C.-85% RH 500hr) was 47 Ω or less, and there was no practical problem. On the other hand, in Comparative Example 1 in which the hardness (20% K value) of the elastic spacer was 700 kgf / mm 2, cracks occurred in the chip component.

Moreover, in Example 6-Example 9 whose particle diameter D of an elastic spacer is 10-50 micrometers, and ratio (H / D) with bump height H is 0.3-1.25, the curvature of a chip component is 13.5 micrometers maximum, and also the initial stage The conduction resistance was 1.8 Ω or less, and the conduction resistance after the high temperature and high humidity test (85 ° C.-85% RH 500hr) was 51 Ω or less, and there was no practical problem. On the other hand, in Comparative Example 6 in which the particle diameter D of the elastic spacer was 60 μm and the ratio (H / D) to the bump height H was 0.25, cracks occurred in a part of the chip component, and therefore, the conduction resistance after the high temperature and high humidity test was OPEN. It became and was not usable.

Moreover, in Example 10-Example 11 whose ratio of the surface of the elastic spacer which contact | connects the electroconductive particle containing layer before applying to thermal pressure is 20-40%, the curvature of a chip component is 12.3 micrometers, and initial conduction resistance is The conduction resistance after 0.3 Ω and high temperature and high humidity test (85 ° C.-85% RH 500hr) was 15 Ω, and there was no practical problem. On the other hand, in the comparative example 4 and the comparative example 5 whose ratios of the surface of the elastic spacer 4 which contact | connects the electroconductive particle containing layer 2 before providing to a thermal pressurization are 0% and 100%, FIG. 4 (a) (b) ), The thickness of the conductive particle-containing layer 2 or the insulating resin layer 3 at the point where the elastic spacer 4 is disposed becomes thinner than the thickness of the other point, and the uniform thickness of the resin An anisotropic conductive film could not be produced.

Moreover, in the comparative example 3 which consists only of an electroconductive particle content layer, removal of resin by the bump of a chip component became inadequate, and initial stage conduction resistance became comparatively high. Moreover, in the comparative example 2 which does not contain an elastic spacer, the curvature of a chip component is 17 micrometers, the initial conduction resistance is 6.8 ohms, and the conduction resistance after a high temperature, high humidity test is 50 ohms or more, and the raise of the conduction resistance by curvature is confirmed. It became.

1 anisotropic conductive film, 2 conductive particle containing layer, 3 insulating resin layer, 4 elastic spacer, 10 board | substrate, 11 electrode part, 12 chip component, 13 bump

Claims (18)

A multilayer structure in which the conductive particle-containing layer and the insulating resin layer are laminated is formed,
It has an elastic spacer at the boundary of the said electroconductive particle content layer and the said insulating resin layer,
The elastic spacer has an hardness (20% K value) of 20 to 500 kgf / mm 2, and the elastic spacer has a particle diameter D of 10 to 50 μm. The method of claim 1,
The said elastic spacer is an anisotropic conductive film whose particle diameter D and ratio (H / D) of the electrode height H of the electronic component electrically conductively connected through the anisotropic conductive film are 0.3-1.5. The method according to claim 1 or 2,
The said anisotropic conductive film whose said elastic spacer is 20-40% of the ratio of the surface which contact | connects the said electroconductive particle content layer. The method of claim 3, wherein
The anisotropic conductive film which consists of a 2-layered structure of the said electroconductive particle content layer and the said insulating resin layer. The method of claim 1,
The electroconductive particle containing layer and insulating resin layer form the shape according to the shape of the electronic component electrically conductively connected through this anisotropic conductive film,
The said elastic spacer is formed in the area | region except the position where the electrode of the said electronic component is arrange | positioned, The anisotropic conductive film. A step of forming one of the conductive particle-containing resin layer and the insulating resin layer on the substrate;
A step of arranging an elastic spacer having a hardness (20% K value) of 20 to 500 kgf / mm 2 and a particle diameter D of 10 to 50 μm on one surface of the conductive particle-containing resin layer and the insulating resin layer applied to the substrate. and,
By forming the other of an electroconductive particle containing resin layer and an insulating resin layer on one surface of the electroconductive particle containing resin layer and insulating resin layer in which the said elastic spacer was arrange | positioned, it is elastic to the boundary of the said electroconductive particle containing layer and the said insulating resin layer. The manufacturing method of the anisotropic conductive film which has a process of arrange | positioning a spacer. The method according to claim 6,
The said elastic spacer is a manufacturing method of the anisotropic conductive film whose particle diameter D and ratio (H / D) of the electrode height H of the electronic component electrically conductively connected through the anisotropic conductive film are 0.3-1.5. The method according to claim 6 or 7,
The said elastic spacer is a manufacturing method of the anisotropic conductive film whose ratio of the surface which contact | connects the said electroconductive particle content layer is 20-40%. The method according to claim 6,
The electroconductive particle containing layer and insulating resin layer form the shape according to the shape of the electronic component electrically conductively connected through this anisotropic conductive film,
The said elastic spacer is arrange | positioned in the area | region except the position where the electrode of the said electronic component is arrange | positioned, The manufacturing method of the anisotropic conductive film. Arranging an anisotropic conductive film in an electrode portion to which the electronic component is connected;
Disposing an electronic component on the electrode portion via the anisotropic conductive film;
It has a connection process which connects the said electronic component to the said electrode part,
The anisotropic conductive film,
A multilayer structure in which the conductive particle-containing layer and the insulating resin layer are laminated is formed,
It has an elastic spacer at the boundary of the said electroconductive particle content layer and the said insulating resin layer,
The elastic spacer has a hardness (20% K value) of 20 to 500 kgf / mm 2 and a particle size D of 10 to 50 µm. 11. The method of claim 10,
The said elastic spacer is the connection method of the electronic component whose ratio (H / D) of the electrode height H of the electronic component electrically conductively connected through the particle size D and the anisotropic conductive film is 0.3-1.5. The method of claim 10 or 11,
The said elastic spacer is the connection method of the electronic component whose ratio of the surface which contact | connects the said electroconductive particle content layer is 20-40%. 11. The method of claim 10,
The electroconductive particle containing layer and insulating resin layer form the shape according to the shape of the said electronic component,
The said elastic spacer is arrange | positioned in the area | region except the position where the electrode of the said electronic component is arrange | positioned, The electronic component connection method. Electronic components,
An electrode portion to which the electronic component is electrically connected;
It has a conductive adhesive layer which electrically connects the said electronic component to the said electrode part,
The conductive adhesive layer,
A multilayer structure in which the conductive particle-containing layer and the insulating resin layer are laminated is formed,
It has an elastic spacer at the boundary of the said electroconductive particle content layer and the said insulating resin layer,
The said elastic spacer has an hardness (20% K value) of 20-500 kgf / mm <2>, and the particle diameter D is 10-50 micrometers. 15. The method of claim 14,
The said elastic spacer is an anisotropic conductive connection body whose particle diameter D and ratio (H / D) of the electrode height H of the electronic component electrically conductively connected through the anisotropic conductive film are 0.3-1.5. 16. The method according to claim 14 or 15,
The said elastic spacer is an anisotropic conductive connector whose ratio of the surface which contact | connects the said electroconductive particle content layer is 20-40%. 17. The method of claim 16,
The anisotropic conductive connector which consists of a 2-layered structure of the said electroconductive particle content layer and the said insulating resin layer. 15. The method of claim 14,
The electroconductive particle containing layer and insulating resin layer form the shape according to the shape of the electronic component electrically conductively connected through this anisotropic conductive film,
The said elastic spacer is formed in the area | region except the position where the electrode of the said electronic component is arrange | positioned, The anisotropic conductive connection body.

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