KR20120081333A - A semiconductor light emitting device and a method for fabricating the same - Google Patents

A semiconductor light emitting device and a method for fabricating the same Download PDF

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Publication number
KR20120081333A
KR20120081333A KR1020110002621A KR20110002621A KR20120081333A KR 20120081333 A KR20120081333 A KR 20120081333A KR 1020110002621 A KR1020110002621 A KR 1020110002621A KR 20110002621 A KR20110002621 A KR 20110002621A KR 20120081333 A KR20120081333 A KR 20120081333A
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South Korea
Prior art keywords
layer
transparent electrode
light emitting
emitting device
electrode layer
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KR1020110002621A
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Korean (ko)
Inventor
김정성
손중곤
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삼성엘이디 주식회사
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Priority to KR1020110002621A priority Critical patent/KR20120081333A/en
Publication of KR20120081333A publication Critical patent/KR20120081333A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes

Abstract

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to prevent a current overcrowding phenomenon by changing a hole pattern of a transparent electrode layer. CONSTITUTION: A first conductive semiconductor layer(300) is formed on a substrate. An active layer(400) is formed on the first conductive semiconductor layer. A second conductive semiconductor layer(500) is formed on the active layer. A transparent electrode layer(600) includes holes of different sizes. A first electrode(710) is formed on the transparent electrode layer.

Description

Semiconductor Light-Emitting Device and Manufacturing Method Thereof {A SEMICONDUCTOR LIGHT EMITTING DEVICE AND A METHOD FOR FABRICATING THE SAME}

Disclosed are a semiconductor light emitting device and a method of manufacturing the same. More specifically, a semiconductor light emitting device and a method of manufacturing the same are disclosed that can prevent current overcrowding.

A semiconductor light emitting device is a semiconductor device capable of generating light of various colors based on recombination of electrons and holes at junctions of p and n type semiconductors when a current is applied. Such semiconductor light emitting devices have a number of advantages, such as long lifespan, low power supply, excellent initial driving characteristics, high vibration resistance, etc., compared to filament based light emitting devices.

Since a semiconductor light emitting device has a beneficial advantage in terms of output, efficiency, or reliability compared to a conventional light source, research is being conducted for use in various lighting devices as well as a backlight unit. Thus, in order to use the semiconductor light emitting device as a light source for lighting, it is necessary to provide a high level of desired output while increasing light efficiency and lowering manufacturing costs.

In general, the semiconductor light emitting device having an epi-up structure has a high current density around the p-type electrode, and as it moves away from the semiconductor light emitting device, the current density decreases and thus does not have even light emission. To prevent this, an additional current blocking layer (CBL) may be additionally formed at the bottom of the p-type electrode to prevent current congestion around the p-type electrode and to have even light emission. In addition, there is a need for a method of preventing a current overload phenomenon using a transparent electrode layer and having a better light distribution.

A semiconductor light emitting device and a method of manufacturing the same are provided.

A semiconductor light emitting device according to an embodiment of the present invention includes a substrate, a first conductive semiconductor layer formed on the substrate, an active layer formed on the first conductive semiconductor layer, and a second conductive semiconductor layer formed on the active layer. And a transparent electrode layer formed on the second conductive semiconductor layer and including holes having different sizes, and a first electrode formed on the transparent electrode layer, wherein the holes of the transparent electrode layer are far from the first electrode. The smaller it gets, the smaller it gets.

In the semiconductor light emitting device according to the aspect of the present invention, the shape of the hole of the transparent electrode layer may be selected from the group consisting of a circle, an ellipse and a polygon.

In the semiconductor light emitting device according to the embodiment of the present invention, the transparent electrode layer may include indium tin oxide (ITO).

In the semiconductor light emitting device according to the aspect of the present invention, the first electrode may be a p-type electrode.

In the semiconductor light emitting device according to the embodiment of the present invention, the holes of the transparent electrode layer may be arranged at different intervals.

In the method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention, forming a first conductive semiconductor layer on a substrate, forming an active layer on the first conductive semiconductor layer, Forming a second conductive semiconductor layer, forming a transparent electrode layer including holes having different sizes on the second conductive semiconductor layer, and forming a first electrode on the transparent electrode layer; The holes of the transparent electrode layer are formed to be smaller in size as they move away from the first electrode.

In the method of manufacturing a semiconductor light emitting device according to an aspect of the present invention, the hole of the transparent electrode layer may be formed in a shape selected from the group consisting of a circle, an ellipse and a polygon.

In the method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention, the holes of the transparent electrode layer may be formed to be disposed at different intervals.

Since the size of the holes of the transparent electrode layer decreases as the semiconductor light emitting device according to the exemplary embodiment moves away from the p-type electrode, the semiconductor light emitting device may have even light emission by improving the current density concentrated on the p-type electrode. As a result, the semiconductor light emitting device according to the exemplary embodiment of the present invention may achieve higher light efficiency by reducing light absorption to the transparent electrode layer due to the hole pattern of the transparent electrode layer.

1 is a perspective view showing a semiconductor light emitting device according to an embodiment of the present invention.
2 to 3 are top plan views of a semiconductor light emitting device according to an embodiment of the present invention.
4A to 4C are diagrams illustrating a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention.

In the description of the embodiments, in the case where each substrate, layer or pattern, etc. is described as being formed "on" or "under" of each substrate, layer or pattern, etc., the "on" ) "And" under "include both" directly "or" indirectly "through other components. In addition, the upper or lower reference of each component is described with reference to the drawings.

The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

Hereinafter, embodiments will be described with reference to the accompanying drawings.

1 is a perspective view of a semiconductor light emitting device according to an embodiment of the present invention.

Referring to FIG. 1, a semiconductor light emitting device according to an exemplary embodiment may include a substrate 100, a buffer layer 200, a first conductive semiconductor layer 300, an active layer 400, and a second conductive semiconductor layer ( 500, a transparent electrode layer 600, and a first electrode 710 and a second electrode 720.

The substrate 100 is provided to grow the buffer layer 200 or the first conductivity type semiconductor layer 200. The substrate 100 may be an insulating substrate such as a glass substrate or a sapphire substrate, and may be a conductive substrate such as Si, SiC, or ZnO. In addition, the substrate 100 is not limited thereto as long as it is suitable for growing the first conductivity-type semiconductor layer 200.

The buffer layer 200 may be formed on the substrate 100. The buffer layer 200 is formed to mitigate lattice mismatch between the substrate 100 and the first conductivity-type semiconductor layer 300 and to overcome a difference in thermal expansion coefficient. In addition, the buffer layer 200 may be formed at a low temperature without doping, and the buffer layer 200 may be omitted when the substrate 100 is a conductive substrate. The buffer layer 200 may be formed of an InAlGaN-based or SiC-based material.

The first conductivity type semiconductor layer 300 is formed on the substrate 100. The first conductivity-type semiconductor layer 300 may be a III-V group compound. The first conductivity type semiconductor layer 300 may be GaN, but is not limited thereto. The first conductivity type semiconductor layer 300 may be n-doped. Here, n-doping means doping with a group V element, and examples of n-type impurities include Si, Ge, Se, Te, or C. The first conductivity type semiconductor layer 300 may be n-GaN. Electrons are moved to the active layer 400 through the first conductivity type semiconductor layer 300.

The active layer 400 is formed on the first conductivity type semiconductor layer 300. The active layer 400 may be formed in a stacked structure in which quantum barrier layers and quantum well layers are alternately repeated so that electrons and holes recombine and emit light. That is, the active layer 400 may be composed of one quantum well layer or a plurality of quantum well layers. The active layer 400 may vary in composition depending on a desired emission wavelength. The quantum barrier layer may be made of GaN, and the quantum well layer may be made of InGaN.

The second conductivity type semiconductor layer 500 may be formed on the active layer 400. The second conductivity-type semiconductor layer 500 may be a III-V group compound. The second conductivity type semiconductor layer 500 may be p-doped. Here, p-doping means doping with a group III element, and examples of p-type impurities include Mg, Zn, or Be. In particular, the second conductivity type semiconductor layer 500 may be doped with Mg impurities. The second conductivity type semiconductor layer 500 may be GaN. Holes are moved to the active layer 400 through the second conductive semiconductor layer 800.

 The transparent electrode layer 600 may be formed on the second conductive semiconductor layer 500. The transparent electrode layer 600 may be formed of a transparent metal layer such as Ni / Au or may be formed of a conductive oxide such as ITO.

The first electrode 710, which is a p-type electrode, is formed on the transparent electrode layer 600, and the second electrode 720, which is an n-type electrode, is formed on the first conductive semiconductor layer 300. The p-type electrode 710 and the n-type electrode 720 may be formed of various metal materials such as Ti / Al. Holes are supplied through the p-type electrode 710, and electrons are supplied through the n-type electrode 720. The holes and electrons thus supplied are combined in the active layer 400 to generate light energy.

The transparent electrode layer 600 includes patterns of holes 610 having different sizes. The patterns of the holes 610 are different from each other, and the smaller the size is from the first electrode 710. The hole 610 patterns may be selected from the group consisting of circles, ellipses, and polygons, and hole patterns having various shapes may be formed according to the shape and configuration of the LED chip.

In general, although the current density is high around the first electrode 710, which is a p-type electrode, even light emission is not possible. By further lowering the high current density of the electrode 710 and increasing the low current density in a region far from the first electrode 710, the current congestion phenomenon may be improved.

The patterns of the holes 610 of the transparent electrode layer 600 may be arranged at different intervals. That is, although the p-type electrodes are arranged at narrow intervals around the first electrode 710, they may be disposed at a wider interval as they move away from the first electrode 710. In the area around the first electrode 710 having a high current density, light may be emitted through the hole 610 pattern of the transparent electrode layer 600. By forming a wide interval of 610, it is possible to evenly distribute the current.

The lower portion of the first electrode 710 may further include a current blocking layer (not shown). The current blocking layer may also be formed to prevent the current congestion around the p-type electrode, and may further improve the current congestion with the hole 610 patterns as described above.

In general, semiconductor light emitting devices are advantageous in terms of output, efficiency, and reliability compared to conventional light sources, and thus are used in various lighting devices as well as a backlight unit. In order to use a semiconductor light emitting device as a light source for lighting, it is necessary to provide a high level of desired output while increasing light efficiency and lowering manufacturing costs. To this end, it is necessary to improve the light efficiency by improving the current density per unit area.

In the semiconductor light emitting device according to the exemplary embodiment of the present invention, the high current density of the first electrode 710, which is a p-type electrode, is further lowered by changing the pattern of the holes 610 of the transparent electrode layer, and is located far from the first electrode 710. In the region at, higher current densities can be improved by increasing lower current densities. As a result, in the semiconductor light emitting device according to the exemplary embodiment of the present invention, the pattern of the holes 610 of the transparent electrode layer 600 around the first electrode 710, which is a p-type electrode, is largely formed, and from the first electrode 710. The farther it is away, the smaller it can be, making it possible to evenly distribute the current density.

In the semiconductor light emitting device according to the exemplary embodiment of the present disclosure, light efficiency of the light emitted from the transparent electrode layer 600 may be reduced by reducing light absorption. That is, the emitted light is emitted without being absorbed through the hole 610 of the patterned transparent electrode layer 600 to improve the light efficiency.

Hereinafter, a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention will be described. 4A to 4C are diagrams illustrating a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention.

4A to 4C, first, the substrate 100 is prepared. The substrate 100 may be selected from the group consisting of a silicon substrate, a sapphire substrate, a SiC substrate, a poly-AlN substrate, and a Si-Al substrate, but is not limited thereto.

The buffer layer 200 is formed on the substrate 100 to eliminate lattice mismatch. When the substrate 100 is conductive, the buffer layer 200 may not be formed. The buffer layer 200 may be formed using a metal organic chemical vapor deposition (MOCVD) method.

Then, the first conductivity type semiconductor layer 300 is formed on the buffer layer 200. The first conductive semiconductor layer 300 is formed of an n-doped n-GaN layer, and Si is used as a dopant. An inert gas such as SiH 4 or Si 2 H 4 can be used as the source of Si. The first conductivity type semiconductor layer 300 may also be formed using MOCVD. In this process, ammonia is used as a precursor of nitrogen. Since the ammonia is thermally very stable, only a small amount of ammonia is thermally decomposed at a high temperature so that the growth of GaN, which is the material of the first conductive semiconductor layer 300, is achieved. Contribute to.

An active layer 400 including a quantum barrier layer made of GaN and a quantum well layer made of InGaN is formed on an upper surface of the first conductive semiconductor layer 300. The active layer 400 may be formed by MOCVD, but is not limited thereto.

A second conductive semiconductor layer 500 is formed on the active layer 400, and the second conductive semiconductor layer 500 is formed of a p-doped p-GaN layer. The second conductivity type semiconductor layer 500 may also be formed by the MOCVD method similarly to the first conductivity type semiconductor layer 300.

Thereafter, the transparent electrode layer 600 is formed on the second conductive semiconductor layer 500, mesa-etched to a part of the first conductive semiconductor layer 300, and then the p-type electrode 710 is formed on the transparent electrode layer 600. ) And an n-type electrode 720 is formed on the first conductivity type semiconductor layer 300.

The transparent electrode layer 600 includes patterns of holes 610 having different sizes, and the sizes of the holes 610 become smaller as they move away from the first electrode 710. The hole 610 patterns may be selected from the group consisting of circles, ellipses, and polygons, and hole patterns having various shapes may be formed according to the shape and configuration of the LED chip. As such, the patterns of the holes 610 of the transparent electrode layer 600 may be formed by a patterning process through photolithography.

In an embodiment of the present invention, the first electrode 710 as a p-type electrode is formed by forming the hole 610 patterns in the transparent electrode layer 600 so as to be smaller as they move away from the first electrode 710 as described above. By further lowering the high current density of and increasing the low current density in a region far from the first electrode 710, the current overcrowding phenomenon can be improved.

The patterns of the holes 610 of the transparent electrode layer 600 may be formed at narrow intervals around the electrodes of the first electrode 710, which is a p-type electrode, and may be formed at a wider interval away from the first electrode 710. . That is, around the first electrode 710 having a high current density, light may be emitted through the hole 610 pattern of the transparent electrode layer 600 so that the interval between the holes 610 is narrow and the current density is relatively low. In the present invention, the gaps between the holes 610 are wider to distribute and distribute the current.

The buffer layer 200, the first conductive semiconductor layer 300, the active layer 400, and the second conductive semiconductor layer 500 may be grown in a molecular beam in addition to metal organic chemical vapor deposition (MOCVD). It can be formed using a variety of techniques, such as the Molecular Beam Epitaxy (MBE) and Hydride Vapor Phase Epitaxy (HVPE).

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100 substrate 200 buffer layer
300: first conductive semiconductor layer 400: active layer
500: second conductive semiconductor layer 600: transparent electrode layer
610: hole 710: first electrode
720: second electrode

Claims (8)

Board;
A first conductivity type semiconductor layer formed on the substrate;
An active layer formed on the first conductivity type semiconductor layer;
A second conductivity type semiconductor layer formed on the active layer;
A transparent electrode layer formed on the second conductivity type semiconductor layer and including holes having different sizes; And
A first electrode formed on the transparent electrode layer,
The holes of the transparent electrode layer are smaller in size as they move away from the first electrode.
The method of claim 1,
The shape of the hole of the transparent electrode layer is a semiconductor light emitting device selected from the group consisting of circular, elliptical and polygonal.
The method of claim 1,
The transparent electrode layer is a semiconductor light emitting device including indium tin oxide (ITO).
The method of claim 1,
And the first electrode is a p-type electrode.
The method of claim 1,
The holes of the transparent electrode layer are disposed at different intervals.
Forming a first conductivity type semiconductor layer on the substrate;
Forming an active layer on the first conductivity type semiconductor layer;
Forming a second conductivity type semiconductor layer on the active layer;
Forming a transparent electrode layer on the second conductivity type semiconductor layer, the transparent electrode layer including holes having different sizes; And
Forming a first electrode on the transparent electrode layer,
The hole of the transparent electrode layer, the manufacturing method of the semiconductor light emitting device is formed so that the smaller the distance away from the first electrode.
The method of claim 6,
The hole of the transparent electrode layer, the manufacturing method of the semiconductor light emitting device is formed in a shape selected from the group consisting of a circle, an ellipse and a polygon.
The method of claim 6,
The hole of the transparent electrode layer is a method of manufacturing a semiconductor light emitting device is formed to be arranged at different intervals.
KR1020110002621A 2011-01-11 2011-01-11 A semiconductor light emitting device and a method for fabricating the same KR20120081333A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101435512B1 (en) * 2013-07-26 2014-09-11 인하대학교 산학협력단 Light emitting diode having mixed structure
WO2014175564A1 (en) * 2013-04-22 2014-10-30 한국산업기술대학교산학협력단 Method for manufacturing vertical type light emitting diode, vertical type light emitting diode, method for manufacturing ultraviolet ray light emitting diode, and ultraviolet ray light emitting diode
KR20140126009A (en) * 2013-04-22 2014-10-30 한국산업기술대학교산학협력단 Manufacturing method for UV-light emitting diode and UV-light emitting diode
KR101462464B1 (en) * 2013-07-26 2014-11-20 인하대학교 산학협력단 Light emitting diode with donut-shaped hole array
KR101494668B1 (en) * 2013-12-10 2015-02-17 인하대학교 산학협력단 light emitting diodes periodically patterned in trarnsparent electrode
WO2017078441A1 (en) * 2015-11-03 2017-05-11 엘지이노텍 주식회사 Semiconductor device
JP2020021803A (en) * 2018-07-31 2020-02-06 日亜化学工業株式会社 Light-emitting element

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014175564A1 (en) * 2013-04-22 2014-10-30 한국산업기술대학교산학협력단 Method for manufacturing vertical type light emitting diode, vertical type light emitting diode, method for manufacturing ultraviolet ray light emitting diode, and ultraviolet ray light emitting diode
KR20140126009A (en) * 2013-04-22 2014-10-30 한국산업기술대학교산학협력단 Manufacturing method for UV-light emitting diode and UV-light emitting diode
US10014442B2 (en) 2013-04-22 2018-07-03 Korea Polytechnic University Industry Academic Cooperation Foundation Method for manufacturing vertical type light emitting diode, vertical type light emitting diode, method for manufacturing ultraviolet ray light emitting diode, and ultraviolet ray light emitting diode
KR101435512B1 (en) * 2013-07-26 2014-09-11 인하대학교 산학협력단 Light emitting diode having mixed structure
KR101462464B1 (en) * 2013-07-26 2014-11-20 인하대학교 산학협력단 Light emitting diode with donut-shaped hole array
KR101494668B1 (en) * 2013-12-10 2015-02-17 인하대학교 산학협력단 light emitting diodes periodically patterned in trarnsparent electrode
WO2017078441A1 (en) * 2015-11-03 2017-05-11 엘지이노텍 주식회사 Semiconductor device
US10461218B2 (en) 2015-11-03 2019-10-29 Lg Innotek Co., Ltd. Semiconductor device
JP2020021803A (en) * 2018-07-31 2020-02-06 日亜化学工業株式会社 Light-emitting element

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