KR20120078100A - Touch screen integrated display device and method of fabricating the same - Google Patents

Abstract

PURPOSE: A touch screen integrated type display device and a method for manufacturing the same are provided to reduce the thickness of the display device and to simply implement manufacturing processes. CONSTITUTION: A gate line(110) and first common lines are parallelly formed on a substrate such that distances of the gate line and the first common lines are constant. A data line(120) crosses the gate line to define a pixel region, and a gate insulating film is interposed between the data line and the gate line. Second common lines(123a, 123b1) are parallelly formed, and distances of the second common lines and the data line are constant. A thin film transistor is formed at the crossed region of the gate line and the data line. Common electrodes(130a1 to 130a4, 130b1, 130b2) are in connection with the thin film transistor and are formed in the pixel region.

Description

TOUCH SCREEN INTEGRATED DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME}

The present invention relates to a touch screen integrated display device capable of recognizing a user's touch and a method of manufacturing the same.

Recently, various input devices such as a keyboard, a mouse, a trackball, a joystick, a digitizer, and the like have been used to configure an interface between a user and a home appliance or various information communication devices. However, the use of the input device as described above has been difficult to increase the degree of completeness of the product by causing inconveniences such as taking up usage and taking up space. Thus, there is an increasing demand for an input device that is convenient, simple and can reduce malfunctions. In accordance with such a request, a touch screen has been proposed in which a user directly contacts a screen with a hand or a pen to input information.

The touch screen is applied to various display panels because of its simplicity, low malfunction, easy inputting without the use of a separate input device, and the convenience of the user to operate quickly and easily through the contents displayed on the screen. have.

The touch panel may be divided into an add-on type and an on-cell type according to a structure. The top plate attaching type is a method of attaching the touch panel to the top plate of the display device after separately manufacturing the display device and the touch panel. The upper plate integrated type directly forms elements constituting the touch panel on the upper glass substrate surface of the display device.

The upper plate attaching type is a structure in which a completed touch panel is mounted on a display device and is thick, and the brightness of the display device is dark, thereby degrading visibility.

On the other hand, in the case of the upper plate integrated type, a separate touch screen is formed on the upper surface of the display device, so that the thickness can be reduced than the upper plate attached type. There was a problem that the manufacturing price increases due to the increase in thickness and the number of processes.

Accordingly, there is a need for a display device that can solve the problems caused by the prior art.

The present invention is to solve the above-mentioned problems, the touch screen integrated display device that can reduce the thickness and the number of processes by using a touch sensing element for recognizing the touch of the display device and the display device components and It aims at providing the manufacturing method.

According to one or more exemplary embodiments, a touch screen integrated display device includes: a gate line and a first common line formed side by side at a predetermined distance on a substrate; A data line crossing the gate line with a gate insulating layer interposed therebetween to define a pixel area, and a second common line formed parallel to the data line; A thin film transistor formed at an intersection of the gate line and the data line; A common electrode connected to the thin film transistor and formed in a plurality of pixel regions; A passivation layer formed on the gate insulating layer and covering the common electrode and the thin film transistor; And a pixel electrode formed on the passivation layer to overlap the common electrode to form an electric field between the common electrode and the pixel electrode connected to the thin film transistor, wherein the common electrode is connected to a first common line. And a second common electrode formed to be separated from the common electrode and the first common electrode, and connected to the second common line, wherein the first common electrode and the second common electrode are alternately disposed in a first direction. Each of the first and second common electrodes may be formed to overlap at least two pixel electrodes.

In the above configuration, the width in the first direction of the second common electrode is equal to or smaller than the width in the first direction of the first common electrode, and the width in the second direction is at least two than the width in the second direction of the first common electrode. It is formed to be larger than twice.

In the above configuration, a first common line is connected to the first common electrode through at least one contact hole, and the second common line is connected to the second common electrode through at least one contact hole.

In the above configuration, the pixel electrode is formed to include a plurality of slits formed long at regular intervals.

The touch screen integrated display device may further include a power supply unit supplying a common voltage to the first and common electrodes in a display mode for displaying an image, and supplying a pulse voltage in a touch mode for touch recognition. .

The number of the first common lines connected to the first common electrode and the number of the second common lines connected to the second common electrode are set to be at least one.

In order to achieve the above object, a method of manufacturing a touch screen integrated display device according to an exemplary embodiment of the present invention deposits a gate metal layer as a first conductive layer on a substrate, and uses a gate line and a gate line on the substrate using a first mask process. Forming a first conductive pattern group including a gate electrode extending from the gate line and a first common line spaced apart from and parallel to the gate line; Forming a semiconductor pattern on a region corresponding to the gate electrode by patterning the semiconductor layer using a second mask process after forming a semiconductor layer on the substrate on which the first conductive pattern group is formed; Depositing a data metal layer as a second conductive layer on the gate insulating film on which the semiconductor pattern is formed, and patterning the data metal layer using a third mask process to include a data line, a source electrode, a drain electrode, and a second common line. Forming a second conductive pattern group; Forming a first passivation layer on the entire surface of the gate insulating layer on which the second conductive pattern group is formed, and etching the first passivation layer and the gate insulating layer using a fourth mask process to expose a portion of the first common line; Forming a second contact hole exposing a first contact hole and a portion of the second common line; A common electrode is formed by depositing a first transparent conductive layer as a third conductive layer on the first passivation layer on which the first and second contact holes are formed, and patterning the first transparent conductive layer using a fifth mask process. Making; Forming a third contact hole exposing a part of the drain electrode by forming a second passivation layer on the first passivation layer on which the common electrode is formed, and etching a part of the second passivation layer by using a sixth mask process; step; And forming a second protective film on the first protective film on which the common electrode is formed, depositing a second transparent conductive layer as a fourth conductive layer, and etching the second transparent conductive layer using a seventh mask process. And forming a pixel electrode, wherein the first common electrode is connected to the first common line through the first contact hole, and the second common electrode is connected to the second common line through the second contact hole. And the first and second common electrodes are overlapped with at least two pixel electrodes.

The forming of the second conductive pattern may include depositing the data metal layer on the gate insulating layer on which the semiconductor pattern is formed; A photolithography process using the third mask after the photoresist is entirely coated on the data metal layer to expose the data metal layer except for a region where the data line, the source electrode, the drain electrode, and the first common line are to be formed. Forming a photoresist pattern; And the data line crossing the gate line with the gate insulating layer interposed therebetween by etching and removing the data metal layer exposed by the third photoresist pattern and removing the third photoresist pattern remaining on the data metal layer. Forming the source electrode extending from the data line, the drain electrode facing the source electrode, and the second common line spaced apart from the data line and parallel to the data line.

The forming of the first and second common electrodes may include depositing the second transparent conductive layer on the first passivation layer on which the first and second contact holes are formed through a deposition process; Forming a photoresist pattern exposing a region on which the transistor is formed by performing a photolithography process using the seventh mask after the entire photoresist is formed on the second transparent conductive layer; And forming the common electrode by removing the photoresist pattern remaining after etching the second transparent conductive layer exposed by the photoresist pattern.

According to a touch screen integrated display device and a method of manufacturing the same, a common electrode, which is a component of the display device, may be configured as a first common electrode and a second common electrode to be used as a touch driving electrode and a touch sensing electrode. As a result, the thickness of the display device can be reduced, and the number of manufacturing processes can be reduced.

In addition, the sizes of the first and second common electrodes may be formed in a plurality of pixel units, the first common electrodes may be connected in rows by using at least one first common line, and the second common electrode may also be formed in columns. Since the second common line is connected, the resistance of the first and second common electrodes may be reduced, thereby improving touch sensitivity.

1A is a schematic diagram illustrating a touch screen integrated display device according to an embodiment of the present invention;
FIG. 1B conceptually illustrates a relationship between a pixel area of a touch screen integrated display device illustrated in FIG. 1A, a driving area for sensing touch, and a sensing area; FIG.
FIG. 1C is a cross-sectional view taken along line II ′ of the touch screen integrated display device illustrated in FIG. 1A;
FIG. 1D is a cross-sectional view taken along line II-II 'of the touch screen integrated display device shown in FIG. 1A;
2A is a plan view illustrating the first common electrode illustrated in FIG. 1A;
2B is a plan view illustrating the second common electrode illustrated in FIG. 1A;
3 is a plan view illustrating a pixel electrode formed in each pixel region illustrated in FIG. 1B;
FIG. 4A is a plan view of a touch screen integrated display device in which portion A of FIG. 1A is enlarged.
4B is a cross-sectional view taken along the line III-III ′ shown in FIG. 4A;
FIG. 5A is a plan view of an integrated touch screen display device, which is an enlarged view of a portion B shown in FIG. 1A;
FIG. 5B is a cross sectional view taken along the line IV-IV ′ shown in FIG. 5A;
6A and 6B are a plan view and a cross-sectional view showing a first mask process for manufacturing a touch screen integrated display device according to an embodiment of the present invention;
7A and 7B are plan and cross-sectional views illustrating a second mask process for manufacturing a touch screen integrated display device according to an exemplary embodiment of the present invention;
8A and 8B are a plan view and a sectional view showing a third mask process for manufacturing a touch screen integrated display device according to an embodiment of the present invention;
9A and 9B are plan and cross-sectional views illustrating a fourth mask process for manufacturing a touch screen integrated display device according to an embodiment of the present invention;
10A and 10B are a plan view and a sectional view showing a fifth mask process for manufacturing a touch screen integrated display device according to an embodiment of the present invention;
11A and 11B are a plan view and a sectional view of a sixth mask process for manufacturing a touch screen integrated display device according to an embodiment of the present invention;
12A and 12B are a plan view and a sectional view showing a seventh mask process for manufacturing a touch screen integrated display device according to an embodiment of the present invention;
FIG. 13 is a graph illustrating a resistance value of a first common electrode according to the number of common lines disposed in the touch driving region, and is 0 to 50 first common to first common electrodes having a size corresponding to a 50 × 50 pixel area. Tables and graphs showing changes in resistance values when lines are formed.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like reference numerals throughout the specification denote substantially identical components. In the following description, when it is determined that the detailed description of the known technology related to the present invention may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

First, a touch screen integrated display device according to an exemplary embodiment of the present invention will be described in more detail with reference to FIGS. 1A to 5B. FIG. 1A is a schematic diagram illustrating a touch screen integrated display device according to an exemplary embodiment of the present invention, and FIG. 1B conceptually illustrates a relationship between a pixel area, a driving area for touch recognition, and a sensing area of the touch screen integrated display device shown in FIG. 1A. 1C is a cross-sectional view taken along line II ′ of the touch screen integrated display device illustrated in FIG. 1A, and FIG. 1D is taken along line II-II ′ of the touch screen integrated display device illustrated in FIG. 1A. It is a section taken.

In the following description, a liquid crystal display device will be described in detail as an example of a touch screen integrated display device.

1A to 1D, a touch screen integrated liquid crystal display (hereinafter, referred to as a display device) according to an exemplary embodiment of the present invention is formed by crossing a plurality of gate lines 110 and a plurality of data lines 120. And a display unit DP including a plurality of pixel areas PA1 to PA36 for displaying information such as a text, an image, a video, and the like, and are formed outside the display to control the display and provide various controllers for touch recognition. A non-display portion (not shown) is included.

The display portion DP (the region of the display portion is shown in FIG. 1B) includes a color filter array (not shown) and a thin film transistor array TFTA (see FIGS. 1C and 1D), and a liquid crystal layer and a liquid crystal between these two arrays. Spacers are formed to maintain the cell gap of the layer. Since the configuration of the color filter array and the liquid crystal layer and the spacer may be known, a detailed description thereof is omitted for simplicity. In addition, the display unit DP is disposed under the thin film transistor array TFTA and includes a backlight unit (not shown) for supplying light to the thin film transistor array TFTA and the color filter array.

The non-display unit includes a host controller 200, a power supply unit 202, a timing controller 204, a gate driver 210, a data driver 220, a touch driving driver 230, and a touch sensing driver 240. In the present invention, the host controller 200 and the power supply unit 202 are described as being integrally formed with the display device, but they may be configured separately from the display device.

As described with reference to FIGS. 1A to 1C and 4A to 5B, the thin film transistor array TFTA may have a plurality of thin film transistor arrays TFTA formed side by side in a first direction (for example, x direction) on one surface of the substrate 100. Data lines 120 formed in parallel in a second direction (eg, y direction) to intersect the gate lines 110 and the plurality of gate lines 110 with the gate insulating layer 115 therebetween. ) And a thin film transistor T formed in an area where these gate lines 110 and data lines 120 cross each other.

The thin film transistor T extends from the gate line 110 and is formed on the substrate 100 as shown in FIGS. 4A to 5B, and the gate electrode G is interposed between the gate electrode G and the gate insulating layer 115. A semiconductor pattern 117 formed corresponding to the position (G), a source electrode formed on the gate insulating layer 115 and the semiconductor pattern 117 so as to be exposed to the center portion of the semiconductor pattern 117, and formed to face each other; S) and the drain electrode D.

In addition, the thin film transistor array TFTA includes a plurality of pixel areas PA1 to PA36 defined by the intersection of the gate lines 110 and the data lines 120, and includes a plurality of pixel areas PA1 to PA36. Each of the PA36 includes a plurality of sub pixel regions SP1, SP2, and SP3 (see FIG. 1B). The thin film transistor array TFTA is formed on the first passivation layer 125 to be insulated from the data lines 120 by the first passivation layer 125. The first common electrodes 130a1, 130a2, 130a3, and 130a4 are formed on the first passivation layer 125. And a plurality of second common electrodes 130b1 and 130b2. The plurality of first common electrodes 130a1, 130a2, 130a3, and 130a4 may be alternately disposed with the second common electrodes 130b1 and 130b2 in the first direction (in the present embodiment, the same as the x-axis direction). In the second direction (y-axis direction, the same in the present embodiment), they are arranged to be adjacent to each other.

In the exemplary embodiment of the present invention, for the sake of simplicity, four first common electrodes 130a1, 130a2, 130a3, and 130a4 and two second common electrodes formed corresponding to 6 × 6 = 36 pixel areas PA1 to PA36 are provided. The configuration of the electrodes 130b1 and 130b2 will be described as an example. In addition, each of the first common electrodes 130a, 130a2, 130a3, and 130a4 has a size corresponding to six (2 × 3) pixel regions, and each of the second common electrodes 130b1 and 130b2 is six It is described that it is formed in a size corresponding to the pixel area of (1 × 6). Accordingly, the first common electrode 130a1 is formed to have sizes corresponding to six pixel areas PA1, PA2, PA7, PA8, PA13, and PA14 adjacent to each other vertically, vertically, horizontally, and vertically. The first common electrode 130a3 is formed to have sizes corresponding to six pixel areas PA4, PA5, PA10, PA11, PA16, and PA17 adjacent to each other, and the six common pixel areas PA19, PA20, The first common electrode 130a4 is formed to have a size corresponding to PA25, PA26, PA31, and PA32, and the first common electrode 130a4 has a size corresponding to six pixel areas PA22, PA23, PA28, PA29, PA34, and PA354 adjacent to each other vertically and horizontally. Is formed. In addition, the second common electrode 130b1 is formed to have sizes corresponding to the six pixel areas PA3, PA9, PA15, PA21, PA27, and PA33 adjacent to each other vertically, and the second common electrode 130b2 is vertical to each other. It is formed in a size corresponding to six adjacent pixel areas PA6, PA12, PA18, PA24, PA30, and PA36.

The size and number of the first and second common electrodes described in the embodiments of the present invention are merely illustrative for convenience of description and the present invention is not limited thereto. According to an embodiment of the present invention, a first common electrode is formed to have a size corresponding to a pixel region formed by grouping a plurality of pixel regions arranged in the first and second directions into at least two or more, and by using any one of the first and second directions. And forming a second common electrode having a size corresponding to the pixel region formed by grouping pixel regions arranged in only one direction.

Therefore, the size and number of each of the first and second common electrodes are considered in terms of the area touched by a finger and the size of the display device (MP3, PDA, PMP, smart phone, notebook computer, netbook, large display device, etc.). Can be changed accordingly. For example, if the size of one pixel area applied to the current display device is 100 × 100 μm, the size of the first common electrode 130a1, 130a2, 130a3, 130a4 may be 50 × 50 in consideration of the case where the touch is performed with a finger. It is also possible to form a pixel size (approximately 5 X 5 mm).

Meanwhile, when a touch occurs, the second common electrodes 130b1 and 130b2 function as sensing electrodes, and between the first common electrodes 130a1 and 130a2 arranged in the first row in the first direction and in the first direction. The first common electrodes 130a3 and 130a4 arranged in the second row are positioned to intersect the first common electrodes 130a1, 130a2, 130a3, and 130a4.

As such, the sizes of the first common electrodes 130a1, 130a2, 130a3, and 130a4 and the second common electrodes 130b1 and 130b2 may be appropriately adjusted in consideration of the size of the pixel area and the touch area of a finger on which touch is performed. As such, it may be formed in a size corresponding to several to several hundred pixel areas. The number of the first common electrodes 130a1, 130a2, 130a3, and 130a4 and the second common electrodes 130b1 and 130b2 may also be appropriately adjusted according to the size of the display device.

FIG. 2A is a plan view illustrating a configuration of the first common electrode 130a1 illustrated in FIG. 1A, and FIG. 2B is a plan view illustrating the second common electrode 130b1 illustrated in FIG. 1A.

The first common electrodes 130a1, 130a2, 130a3, and 130a4 and the second common electrodes 130b1 and 130b2 according to the embodiment of the present invention have a function of driving an liquid crystal by forming an electric field together with the pixel electrode 140 to be described later. In addition, when a touch occurs in the display device, it functions as a driving electrode and a sensing electrode that can recognize the touch position. Therefore, the first common electrodes 130a1, 130a2, 130a3, and 130a4 and the second common electrodes 130b1 and 130b2 should be understood to have the same meaning as the touch driving electrode and the touch sensing electrode. In FIG. 1B, an area in which the plurality of first and second common electrodes 130a1, 130a2, 130a3, 130a4; 130b1, 130b2 is formed is referred to as a first to fourth touch driving area DA1 to DA4 and a first area. And second touch sensing areas SA1 and SA2.

Meanwhile, since the first common electrodes 130a1, 130a2, 130a3, and 130a4 and the second common electrodes 130b1 and 130b2 according to the embodiment of the present invention should function as electrodes for liquid crystal driving, they should be formed of a transparent material. . However, when the first common electrode 130a1, 130a2, 130a3, 130a4 and the second common electrode 130b1, 130b2 are formed of an oxide-based transparent conductive material such as ITO or IZO, the first common electrode 130a1, 130a2, 130a3, 130a4 is formed of a metal-based conductive material. The resistance is increased compared to. This may decrease the touch performance by increasing the loss of the touch signal and the time constant of the capacitance. Therefore, it is necessary to reduce the resistance generated due to the materials used for the first common electrodes 130a1, 130a2, 130a3, and 130a4 and the second common electrodes 130b1 and 130b2.

In addition, the first common electrodes 130a1, 130a2, 130a3, and 130a4 and the second common electrodes 130b1 and 130b2 should also function as touch driving electrodes and touch sensing electrodes as well as functions for driving liquid crystals. Therefore, in order to function as the touch driving electrode and the touch sensing electrode, it is necessary to connect the first common electrodes 130a1, 130a2; 130a3, and 130a4 separated by the second common electrodes 130b1 and 130b2.

In the present invention, the first common electrodes 130a1, 130a2, 130a3, and 130a4 are used to reduce the resistance of the first common electrodes 130a1, 130a2, 130a3, 130a4 and the second common electrodes 130b1 and 130b2. The second common electrodes 130b1 and 130b2 are connected in rows by using the common lines 113a1, 113a2, 113b1, and 113b2, and are connected in columns by using the second common lines 123a1 and 123b1.

1A and 1B, the first common electrodes 130a1 and 130a2 formed in the first and second touch driving areas DA1 and DA2 arranged in the first row in the first direction are divided into two first parts. The first common electrodes 130a3 and 130a4 electrically connected by the common lines 113a1 and 113a2 and formed in the third and fourth touch driving areas DA3 and DA4 arranged in the second row are two. The first common lines 113b1 and 113b2 are electrically connected to each other. In addition, the second common electrode 130b1 formed in the first touch sensing area SA1 arranged in the first column in the second direction is electrically connected to the second common line 123a1 and is arranged in the second column. The second common electrode 130b2 formed in the second touch sensing area SA2 is electrically connected to the second common line 123b1.

Hereinafter, a connection relationship between the first common lines 113a1, 113a2, 113b1, and 113b2 and the first common electrodes 130a1 and 130a2, and a connection between the second common lines 123a1 and 123b1 and the second common electrodes 130b1 and 130b2. The relationship will be described in more detail with reference to FIGS. 1A, 4A-5B. FIG. 4A is a plan view of a touch screen integrated display device showing an enlarged portion A (sub-pixel in pixel area PA1) shown in FIG. 1A, and FIG. 4B is a cross-sectional view taken along the line III-III 'shown in FIG. 4A, and FIG. 5A. Is a plan view of a touch screen integrated display device in which portion B (subpixel in pixel area PA3) shown in FIG. 1A is enlarged, and FIG. 5B is a cross-sectional view taken along line IV-IV 'of FIG. 5A.

The first common lines 113a1, 113a2, 113b1, and 113b2 include the pixel areas PA1 to PA6; PA7 to PA12; PA19 to PA24; PA25 in the first direction as shown in FIGS. 1A, 1B, 4A, and 4B. A gate insulating film 115 formed on the substrate 100 so as to extend across the PA30 and sequentially formed thereon, and second contact holes CH2a, CH2b, and CH2c passing through the first passivation layer 125. CH2d, CH2e, CH2f, CH2g, CH2h, CH2i, and CH2j are connected to the first common electrode 130a1 formed on the first passivation layer 125.

In detail, the first common line 113a1 is formed through the second contact hole CH2a formed in the subpixel area SP3 of the pixel area PA1 in the first touch driving area DA1. 130a1 is connected to the first common electrode 130a2 through a second contact hole CH2b formed in the subpixel area SP3 of the pixel area PA5 in the second touch driving area DA2. The first common electrodes 130a1 and 130a2 of the first row separated by the second common electrode 130b1 are electrically connected to each other.

The first common line 113a2 is connected to the first common electrode 130a1 through the second contact hole CH2c formed in the subpixel area SP2 of the pixel area PA7 in the first touch driving area DA1. Connected to the first common electrode 130a2 through a second contact hole CH2d formed in the subpixel area SP3 of the pixel area PA10 in the second touch driving area DA2. The first common electrodes 130a1 and 130a2 in the first row separated by the common electrode 130b are electrically connected to each other. The first common lines 113a1 and 113a2 are connected to the touch driving line 113a to receive a pulse voltage Vtsp from the touch driving driver 230.

The first common line 113b1 is connected to the first common electrode 130a3 through the second contact hole CH2e formed in the subpixel area SP1 of the pixel area PA20 in the third touch driving area DA3. A second contact hole CH2f formed in the subpixel area SP1 of the pixel area PA22 in the fourth touch driving area DA4 and a second pixel formed in the subpixel area SP2 of the pixel area PA23. The first common electrode 130a4 is connected through the second contact hole CH2g to electrically connect the first common electrodes 130a3 and 130a4 in the second row separated by the second common electrode 130b1. .

The first common line 113b2 is the second contact hole CH2h formed in the subpixel area SP2 of the pixel area PA25 in the third touch driving area DA3 and the subpixel area of the pixel area PA26. It is connected to the first common electrode 130a3 through the second contact hole CH2i formed in SP2 and is formed in the subpixel area SP3 of the pixel area PA28 in the fourth touch driving area DA4. The first common electrodes 130a3 and 130a4 in the second row, which are connected to the first common electrode 130a4 through the second contact hole CH2j and separated by the second common electrode 130b1, are electrically connected to each other. Let's do it. The first common lines 113b1 and 113b2 are connected to the touch driving line 113b to receive the pulse voltage Vtsp from the touch driving driver 230.

The second common lines 123a1 and 123b1 may include the pixel areas PA3, PA9, PA15, PA21, PA27, PA33; PA6, PA12, and PA18 in the second direction as shown in FIGS. 1A, 1B, 5A, and 5B. And second contact holes CH3a formed on the gate insulating film 115 to extend across the PA24, PA30, and PA36, and penetrating the first and second passivation layers 125 and 135 sequentially formed thereon. The second common electrodes 130b1 and 130b2 are formed on the second passivation layer 135 through CH3b and CH3c.

In detail, the second common line 123b1 is connected to the second common electrode CH3a through the third contact hole CH3a formed in the subpixel area SP3 of the pixel area PA3 in the first touch sensing area SA1. 130b1).

The second common line 123b2 is a third contact hole CH3b formed in the subpixel area SP3 of the pixel area PA12 in the second touch sensing area SA2 and a subpixel area of the pixel area PA24. It is connected to the second common electrode 130b2 through the third contact hole CH3c formed in SP3.

As described above, in the embodiment of the present invention, two first common lines 113a1, 113a2; 113b1, and 113b2 are formed in one row of the touch driving areas DA1, DA2; DA3, and DA4. One common line 113a1, 113a2; 113b1, 113b2 has one or two second contact holes CH2a; CH2b; CH2c; CH2d; CH2e; CH2f, CH2g in each touch driving area DA1, DA2; DA3, DA4. Although it has been described that the first common electrode 130a1, 130a2, 130a3, and 130a4 is connected through CH2h, CH2i, and CH2j, the present invention is not limited thereto. For example, to reduce the resistance of the first common electrodes 130a1, 130a2, 130a3, and 130a4, the number of first common lines 113a1, 113a2, 113b1, and 113b2 and the second contact holes CH2a, The number of CH2b, CH2c, CH2d, CH2e, CH2f, CH2g, CH2h, CH2i and CH2j) can be appropriately adjusted.

In addition, in the exemplary embodiment of the present invention, one second common line 123a1 and 123b1 is formed for each of the touch sensing areas SA1 and SA2 in the first direction, and one second common line 123a1 and 123b1 is formed. Although each touch sensing area SA1 and SA2 has been described as being connected to the second common electrode 130b1 and 130b2 through one or two third contact holes CH3a (CH3b and CH3c), the present invention is not limited thereto. no. For example, in order to reduce the resistance of the second common electrodes 130b1 and 130b2, the number of the second common lines 123a1 and 123b1 and the number of the third contact holes CH3a, CH3b, and CH3c disposed in each touch sensing area are appropriately adjusted. I can adjust it.

In addition, the thin film transistor array TFTA includes the first common electrodes 130a1 and 130a2 by the second passivation layer 135 in the subpixel regions SP1, SP2, and SP3 constituting each of the pixel regions PA1 to PA36. And subpixel electrodes 140a, 140b, and 140c formed to be insulated from the second common electrode 130b1 and 130b2. 3 is a plan view illustrating subpixel electrodes 140a, 140b, and 140c formed in each pixel area PA. 1B and 3, the subpixel electrodes 140a, 140b, and 140c are formed in the subpixel regions SP1, SP2, and SP3, respectively, and the three subpixel electrodes 140a, 140b, 140c are formed in one pixel region ( It can be seen that each of PA1 ~ PA36).

Meanwhile, each of the subpixel electrodes 140a, 140b, and 140c constituting the pixel electrode includes a plurality of slits 143a or 143b formed to be elongated at regular intervals. As such, when the plurality of slits 143a and 143b are formed in the subpixel electrodes 140a, 140b and 140c, respectively, the pixel electrode 140 and the first and second common electrodes are formed through the slits 143a and 143b. A fringe field is formed between (130a1, 130a2, 130a3, 130a4; 130b2, 130b2) to drive the liquid crystal in the fringe field switching mode.

In the embodiment of the present invention, an example in which one pixel electrode includes three subpixel electrodes 140a, 140b, and 140c corresponding to an R (red), G (green), and B (blue) color filter will be described. However, the present invention is not limited thereto. For example, the number of subpixel electrodes constituting one pixel electrode can be appropriately changed depending on the type of color filter formed in the color filter array.

The backlight unit (not shown) is disposed under the thin film transistor array TFTA. The backlight unit uniformly irradiates the thin film transistor array TFTA and the color filter array including a plurality of light sources. The backlight unit may be implemented as a direct type backlight unit or an edge type backlight unit. The light source of the backlight unit may include at least one of a hot cathode fluorescent lamp (HCFL), a cold cathode fluorescent lamp (CCFL), an external electro fluorescent lamp (EEFL), and a light emitting diode (LED).

Referring back to FIG. 1A, the gate driver 210 sequentially outputs a gate pulse (or scan pulse) in the display mode under the control of the timing controller 204, and sets the gate voltage of the output to the gate high voltage VGH and the gate. Shift to low voltage VGL. The gate pulses output from the gate driver 210 are sequentially supplied to the gate lines 110 in synchronization with the data voltages output from the data driver 220. The gate high voltage VGH is a voltage higher than or equal to the threshold voltage of the thin film transistor T, and the gate low voltage VGH is lower than the threshold voltage of the thin film transistor T. The gate drive ICs of the gate driver 210 are connected to gate lines 110 formed on the substrate 100 of the thin film transistor array (TFTA) through a tape automated bonding (TAP) process or a gate in panel (GIP) process. The pixel may be directly formed on the substrate 100 of the thin film transistor array TFTA.

The data driver 220 samples and latches the digital video data RGB under the control of the timing controller 204. The data driver 220 inverts the polarity of the data voltage by converting the digital video data RGB into positive / negative gamma compensation voltages GMA1 to GMAn. The positive / negative data voltage output from the data driver 220 is synchronized with the gate pulse output from the gate driver 210. Each of the source driver integrated circuits (ICs) of the data driver 220 may be connected to the data lines 120 of the display unit by a chip on glass (COG) process or a tape automated bonding (TAB) process. The source drive IC may be integrated into the timing controller 204 and implemented as a one-chip IC with the timing controller 204.

The timing controller 204 is supplied from an external host controller 200 and supplies timing control signals for controlling the operation timing of the gate driver 210 and the data driver 220 using timing signals necessary for driving the display device. Occurs. Timing control signals for controlling the operation timing of the gate driver 210 and the data driver 220 include gate timing control signals for controlling the operation timing of the gate driver 210, operation timing and data of the data driver 220. And a data timing control signal for controlling the polarity of the voltage.

The gate timing control signal includes a gate start pulse (GSP), a gate shift clock (GSC), a gate output enable signal (GOE), and the like. The gate start pulse GSP is applied from the gate driver 210 to the first gate drive IC which first outputs the gate pulse every frame period to control the shift start timing of the gate drive IC. The gate shift clock GSC is a clock signal which is commonly input to the gate drive ICs of the gate driver 210 to shift the gate start pulse GSP. The gate output enable signal GOE controls the output timing of the gate drive ICs of the gate driver 210.

The data timing control signal includes a source start pulse (SSP), a source sampling clock (SSC), a polarity control signal (POL), and a source output enable signal (SOE). It includes. The source start pulse SSP is applied to the first source drive IC sampling data first in the data driver 220 to control data sampling start timing. The source sampling clock SSC is a clock signal that controls sampling timing of data in the source drive ICs based on a rising or falling edge. The polarity control signal POL controls the polarity of the data voltages output from the source drive ICs. The source output enable signal SOE controls the output timing of the source drive ICs. If the digital video data RGB is input to the data driver 220 through a mini low voltage differential signaling (LVDS) interface, the source start pulse SSP and the source sampling clock SSC may be omitted.

The power supply unit 202 may include a DC-DC converter including a pulse width modulation (PWM) modulation circuit, a boost converter, a regulator, a charge pump, a voltage divider circuit, an operation amplifier, and the like. DC-DC Convertor). The power supply unit 202 adjusts an input voltage from the host controller 200 to drive the display unit DP, the gate driver 210, the data driver 220, the timing controller 204, and the backlight unit (not shown). Generate power. The powers output from the power supply unit 202 include a high potential power voltage VDD, a gate high voltage VGH, a gate low voltage VGL, a common voltage Vcom, and positive / negative gamma reference voltages VGMA1 to VGMAn. ), Pulse voltage (Vtsp) and the like. The common voltage Vcom is supplied to the first common electrodes 130a1, 130a2, 130a3, and 130a4 and the second common electrodes 130b1 and 130b2 to form a fringe field electric field between the pixel electrodes 140. In addition, the pulse voltage Vtsp is supplied to the first common electrodes 130a1, 130a2, 130a3, and 130a4 during a period in which the common voltage Vcom is not supplied, thereby functioning as a touch driving electrode for touch recognition. The supply timing of the common voltage Vocm and the pulse voltage Vtsp may be controlled by the host controller 200 or controlled by the timing controller 204.

The host controller 200 transmits digital video data (RGB) of the input image and timing signals (Vsync, Hsync, DE, MCLK) required for driving the display through an interface such as an LVDS interface and a transition minimized differential signaling (TMDS) interface. Transfer to timing controller 204.

The touch driver 230 may apply the pulse voltage Vtsp generated by the power supply unit 202 to the first common electrode through the touch driving lines 113a and 113b and the first common lines 113a1, 113a2, 113b1 and 113b2. It supplies to (130a1, 130a2, 130a3, 130a4). The pulse voltages Vtsp supplied to the first common electrodes 130a1, 130a2, 130a3, and 130a4 are sequentially supplied in units of rows. That is, the pulse voltage Vtsp is the first common line disposed in the first row through the touch driving line 113a, the first common lines 113a1 and 113a2 and the second contact holes CH2a, CH2b, CH2c, and CH2d. Supplied to the electrodes 130a1 and 130a2, and then the touch driving line 113b and the first common lines 113b1 and 113b2 and the second contact holes CH2e, CH2f, CH2g, CH2h, CH2i, and CH2j are disposed. The first common electrodes 130a3 and 130a4 arranged in the second row are supplied through the first row.

The touch driver 230 does not apply a pulse voltage to the first common electrode disposed in a row other than the first common electrode of the row to which the current pulse voltage Vtsp is applied. For example, if a pulse voltage is applied to the first common electrodes 130a1 and 130a2 arranged in the first row, the pulse voltage is not applied to the first common electrodes 130a3 and 130a4 arranged in the second row. In the floating state, the current path between the touch driver 230 and the first common electrodes 130a3 and 130a4 is opened. On the other hand, if a pulse voltage is applied to the first common electrodes 130a3 and 130a4 arranged in the second row, the pulse voltage is not applied to the first common electrodes 130a1 and 130a2 arranged in the first row. In a state in which no voltage is applied, the current path between the touch driver 230 and the first common electrodes 130a1 and 130a2 is opened.

The touch sensing driver 240 is connected to the second common electrodes 130b1 and 130b2 through the touch sensing lines 123a and 123b and the second common lines 123a1 and 123b1, and when there is a touch, the first common electrode. Determining a change in capacitance generated between the 130a1, 130a2, 130a3, and 130a4 and the second common electrode 130b1 and 130b2 determines the x and y coordinates of the touched position.

Hereinafter, a method of manufacturing a touch screen integrated display device according to an exemplary embodiment of the present invention will be described with reference to FIGS. 6A to 12B. For convenience of explanation, only one subpixel area will be described below. In addition, one subpixel region is formed on a pair of upper and lower gate lines and a pair of left and right data lines, but for simplicity, only one gate line and one data line are shown in the following description of the manufacturing method. For reference, in FIGS. 6A to 12B, A is a subpixel corresponding to part A of FIG. 1A, and B is a subpixel corresponding to part B of FIG. 1A.

6A and 6B are plan and cross-sectional views illustrating a first mask process for manufacturing a touch screen integrated display device according to an exemplary embodiment of the present invention.

6A and 6B, the gate metal layer as the first conductive layer is deposited on the entire surface of the substrate 100 through a deposition process such as sputtering on the substrate 100, and then the gate line on the substrate 100 using the first mask process. A first conductive pattern group including a gate electrode G extending from the gate line 110 and the gate line 110 and a first common line 113a1 spaced apart from and in parallel with the gate line 110 is formed.

In more detail, a first photoresist pattern (not shown) exposing the gate metal layer is exposed by performing a photolithography process using a first mask after applying a photoresist on the substrate 100. Form. After the gate metal layer exposed by the first photoresist pattern is removed through wet etching, the remaining first photoresist pattern is ashed, thereby forming the gate line 110 and the gate line (eg, the gate line 110) on the substrate 100. A gate electrode G formed integrally with the 110 and a first common line 113a1 spaced apart from and parallel to the gate line 110 are formed. The gate metal layer is selected from materials such as aluminum (Al) -based metals, copper (Cu), chromium (Cr), and molybdenum.

7A and 7B are plan and cross-sectional views illustrating a second mask process for manufacturing a touch screen integrated display device according to an exemplary embodiment of the present invention.

7A and 7B, after the gate insulating film 115 is formed on the substrate 100 on which the gate line 110 having the gate electrode G and the first common line 113a1 are formed, the gate insulating film 115 is formed. A semiconductor layer is formed on 115. Thereafter, the photoresist is entirely coated on the semiconductor layer, and then a photolithography process using a second mask is performed, thereby exposing a second photoresist pattern exposing the remaining regions of the semiconductor layer except for the region corresponding to the channel region (not shown). To form. Subsequently, the semiconductor pattern 117 is formed by etching the semiconductor layer exposed by the second photoresist pattern and then removing the remaining second photoresist pattern.

8A and 8B are plan and cross-sectional views illustrating a third mask process for manufacturing a touch screen integrated display device according to an exemplary embodiment of the present invention.

8A and 8B, a data metal layer as a second conductive layer is deposited on the gate insulating layer 115 on which the semiconductor pattern 117 is formed, and a photoresist is entirely coated on the data metal layer, and then a third mask is used. By performing the photolithography process, a third photoresist pattern (not shown) exposing the data metal layer except for the region where the data line, the source electrode, the drain electrode, and the first common line are to be formed is formed. The data metal layer exposed by the third photoresist pattern is etched and removed, and the third photoresist pattern remaining on the data metal layer is removed to cross the gate line 110 with the gate insulating layer 115 therebetween. Spaced apart from the data line 120, the source electrode S extending from the data line 120, the transistor T including the drain electrode D facing the source electrode S, and the data line 120. A second common line 123a1 is formed to be parallel to the data line 120.

9A and 9B are plan and cross-sectional views illustrating a fourth mask process for manufacturing a touch screen integrated display device according to an exemplary embodiment of the present invention.

9A and 9B, the first passivation layer 125 is formed on the entire surface of the gate insulating layer 115 on which the data line 120, the transistor T, and the second common line 123a1 are formed. A fourth photoresist for exposing a part of the first common line 113a1 and the second common line 123a1 by performing a photolithography process using a fourth mask after the photoresist is entirely coated on the passivation layer 125. A pattern (not shown) is formed. The first common line 113a1 and the second common line may be removed by etching a portion of the first passivation layer 125 and the gate insulating layer 115 exposed by the fourth photoresist pattern and then removing the remaining fourth photoresist pattern. The second contact hole CH2 and the third contact hole CH3 exposing a part of the line 123a1 are formed. Here, the first passivation layer 125 is used to reduce the parasitic capacitance between the gate line 110 / data line 120 and the first and second common electrodes, which will be described later, and may be organic based, such as photoacryl (PAC). It is formed using a low dielectric material.

10A and 10B are plan and cross-sectional views illustrating a fifth mask process for manufacturing a touch screen integrated display device according to an exemplary embodiment of the present invention.

Referring to FIGS. 10A and 10B, the first transparent conductive layer serving as the third conductive layer may be formed on the first passivation layer 125 having the second and third contact holes CH2 and CH3 through a deposition process such as PECVD. Deposit. Subsequently, after the photoresist is entirely formed on the first transparent conductive layer, a fifth photoresist pattern (not shown) exposing the remaining regions other than the region where the common electrode is to be formed is performed by performing a photolithography process using a fifth mask. Form. The first common electrode 130a1 and the second common electrode as shown in FIGS. 2A and 2B are removed by removing the remaining fifth photoresist pattern after etching the transparent conductive layer exposed by the fifth photoresist pattern. 130b1 is formed. The first and second common electrodes 130a1 and 130b1 are formed of a transparent conductive material such as ITO.

11A and 11B are plan and cross-sectional views illustrating a sixth mask process for manufacturing a touch screen integrated display device according to an exemplary embodiment of the present invention.

11A and 11B, a second passivation layer 135 is formed on the entire surface of the first passivation layer 125 on which the first and second common electrodes 130a1 and 130b1 are formed, and on the second passivation layer 135. After the entire surface of the photoresist is applied to a photolithography process using a sixth mask, a sixth photoresist pattern (not shown) for exposing a part of the drain electrode D is formed. Then, a portion of the drain electrode D is removed by sequentially etching the portions of the second passivation layer 135 and the first passivation layer 125 exposed by the sixth photoresist pattern, and then removing the remaining sixth photoresist pattern. The first contact hole CH1 exposing is formed.

12A and 12B are plan and cross-sectional views illustrating a seventh mask process for manufacturing a touch screen integrated display device according to an exemplary embodiment of the present invention.

12A and 12B, a second transparent conductive layer serving as a fourth conductive layer is deposited on the second protective layer 135 through a deposition process such as PECVD. Subsequently, a seventh photoresist pattern exposing the remaining regions other than the region where the pixel electrode 140 is to be formed by performing a photolithography process using a seventh mask after forming the entire photoresist on the second transparent conductive layer. Omit). The pixel having a plurality of slits 143a or 143b as shown in FIG. 3 by removing the remaining seventh photoresist pattern after etching the second transparent conductive layer exposed by the seventh photoresist pattern. The electrode 140 is formed. The pixel electrode 140 formed as described above is connected to the drain electrode D through the first contact hole Ch1. Since the pixel electrode 140 has been described in detail, detailed description thereof will be omitted herein.

According to the touch screen integrated display device and the manufacturing method thereof according to the above-described embodiment of the present invention, a common electrode used to form an electric field for driving the liquid crystal of the display device includes a first common electrode and a second common electrode. Since the touch driving electrode and the touch sensing electrode can be used, there is no need to separately configure the touch electrode. Therefore, the number of processes required for forming the touch driving electrode and the touch sensing electrode can be reduced, and the thickness of the display device can be reduced by the thickness thereof.

In addition, since the first common electrodes arranged in the first direction are connected in row units using at least one first common line, the second common electrodes are also connected in column units using a second common line. The resistance of the second common electrode can be reduced. Therefore, there is an advantage that the touch sensitivity can be improved by reducing the load during touch driving.

FIG. 13 is a graph illustrating a resistance value of a first common electrode according to the number of common lines disposed in one touch region, that is, one touch driving region and one touch sensing region, and is a 50 × 50 pixel region. Tables and graphs show changes in resistance values when 0 to 50 first common lines are formed in a first common electrode having a size corresponding to. In the absence of the first common line, the resistance value of 1300Ω was shown. In the case of five, the resistance value of 434Ω was shown and in the case of ten, the resistance value of 345Ω was gradually decreased. However, after the number of the first common lines exceeded 10, even if the number of the first common lines was increased, there was no significant change in the overall resistance value.

Therefore, when the size of one first common electrode is formed to correspond to, for example, a 50 × 50 pixel area, it can be seen that it is appropriate to set the number of the first common lines to 10 or less. Given that each pixel is typically composed of three subpixels and the area of each subpixel is defined by two data lines neighboring each other and two gate lines neighboring each other, the size of the first common electrode may be Compared with the case of forming in size, the number of common lines can be reduced to at least 1/5. In addition, when the size of the first common electrode is formed to be the size of the subpixel, the number of second contact holes for connecting the first common electrodes should be as large as the number of subpixels. For example, when the size of one first common electrode is formed to a size corresponding to, for example, 50 X 50 pixel area, the number of second contact holes is at least 1 /. Can be reduced to 25 Therefore, there is an advantage that the defective rate of the display device, which may occur in the manufacturing process of the display device for forming the fine contact hole, can be reduced by that much.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. For example, the first and second directions described in the embodiments of the present invention can be changed in directions opposite to each other, and the size and number of the first and second common electrodes, and the first and second common. The number of lines and the number of second to fifth contact holes are matters that can be arbitrarily changed appropriately, and are not limited to those described in the embodiments of the present invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the invention but should be defined by the claims.

100: substrate 110: gate line
113a, 113b: touch drive line
113a1, 113a2, 113b1, 113b2: first common line
115: gate insulating film 117: semiconductor pattern
120: data line 123a, 123b: touch sensing line
123a1, 123b1: second common line 125: first passivation film
130a1, 130a2, 130a3, 130a4: first common electrode
130b1 and 130b2: second common electrode 140a, 140b and 140c: subpixel electrode
140 pixel electrode 135 second protective film
143a, 143b: Slit 200: Host Controller
202: power supply unit 204: timing controller
210: gate driver 220: data driver
230: touch drive driver 240: touch sensing driver
CH1: first contact hole
CH2a, CH2b, CH2c, CH2d, CH2e, CH2f, CH2g, CH2h, CH2i, CH2j: Second contact hole
CH3a, CH3b, CH3c: third contact hole D: drain electrode
DA1 to DA6: driving electrode G: gate electrode
PA1-PA36: pixel area S: source electrode
SA1 to SA2: sensing electrodes SP1, SP2, SP3: subpixel area
T: thin film transistor TFTA: thin film transistor array

Claims (9)

A gate line and a first common line formed side by side at a predetermined distance on the substrate;
A data line crossing the gate line with a gate insulating layer interposed therebetween to define a pixel area, and a second common line formed parallel to the data line;
A thin film transistor formed at an intersection of the gate line and the data line;
A common electrode connected to the thin film transistor and formed in a plurality of pixel regions;
A passivation layer formed on the gate insulating layer and covering the common electrode and the thin film transistor; And
A pixel electrode formed on the passivation layer to overlap the common electrode to form an electric field between the common electrode, and a pixel electrode connected to the thin film transistor,
The common electrode includes a first common electrode connected to a first common line and a second common electrode formed to be separated from the first common electrode, and connected to the second common line.
The first common electrode and the second common electrode are alternately disposed in a first direction, and each of the first and second common electrodes is formed to overlap at least two or more pixel electrodes. .
The method of claim 1,
The width in the first direction of the second common electrode is equal to or smaller than the width in the first direction of the first common electrode, and the width in the second direction is at least two times greater than the width in the second direction of the first common electrode. Touch screen integrated display device, characterized in that large.
The method of claim 1,
The first common line is connected to the first common electrode through at least one contact hole, and the second common line is connected to the second common electrode through at least one contact hole. Display.
The method of claim 1,
And the pixel electrode includes a plurality of slits formed to be elongated at regular intervals.
The method of claim 1,
And a power supply unit which supplies a common voltage to the first and common electrodes in a display mode for displaying an image, and a pulse voltage in a touch mode for touch recognition.
The method of claim 1,
And the number of the first common lines connected to the first common electrode and the number of the second common lines connected to the second common electrode is at least one or more.
Depositing a gate metal layer as a first conductive layer on the substrate, and using a first mask process, a gate line and a gate electrode extending from the gate line, and a first common spaced apart from and parallel to the gate line on the substrate Forming a first group of conductive patterns including lines;
Forming a semiconductor pattern on a region corresponding to the gate electrode by patterning the semiconductor layer using a second mask process after forming a semiconductor layer on the substrate on which the first conductive pattern group is formed;
Depositing a data metal layer as a second conductive layer on the gate insulating film on which the semiconductor pattern is formed, and patterning the data metal layer using a third mask process to include a data line, a source electrode, a drain electrode, and a second common line. Forming a second conductive pattern group;
Forming a first passivation layer on the entire surface of the gate insulating layer on which the second conductive pattern group is formed, and etching the first passivation layer and the gate insulating layer using a fourth mask process to expose a portion of the first common line; Forming a second contact hole exposing a first contact hole and a portion of the second common line;
A common electrode is formed by depositing a first transparent conductive layer as a third conductive layer on the first passivation layer on which the first and second contact holes are formed, and patterning the first transparent conductive layer using a fifth mask process. Making;
Forming a third contact hole exposing a part of the drain electrode by forming a second passivation layer on the first passivation layer on which the common electrode is formed, and etching a part of the second passivation layer by using a sixth mask process; step; And
After forming a second passivation film on the first passivation film on which the common electrode is formed, a second transparent conductive layer as a fourth conductive layer is deposited, and the second transparent conductive layer is etched using a seventh mask process to thereby etch the pixel. Forming an electrode;
The first common electrode is connected to the first common line through the first contact hole, and the second common electrode is connected to the second common line through the second contact hole.
And each of the first and second common electrodes is formed to overlap at least two pixel electrodes.
The method of claim 7, wherein
Forming the second conductive pattern,
Depositing the data metal layer on the gate insulating layer on which the semiconductor pattern is formed;
A photolithography process using the third mask after the photoresist is entirely coated on the data metal layer to expose the data metal layer except for a region where the data line, the source electrode, the drain electrode, and the first common line are to be formed. Forming a photoresist pattern; And
The data line crossing the gate line with the gate insulating layer interposed therebetween by etching and removing the data metal layer exposed by the third photoresist pattern and removing the third photoresist pattern remaining on the data metal layer; Forming the source electrode extending from the data line, the drain electrode facing the source electrode, and the second common line spaced apart from the data line and formed parallel to the data line. Method of manufacturing a touch screen integrated display device.
The method of claim 7, wherein
Forming the first and second common electrodes,
Depositing the second transparent conductive layer on the entire surface of the first passivation layer on which the first and second contact holes are formed through a deposition process;
Forming a photoresist pattern exposing a region on which the transistor is formed by performing a photolithography process using the seventh mask after the entire photoresist is formed on the second transparent conductive layer;
And removing the photoresist pattern remaining after etching the second transparent conductive layer exposed by the photoresist pattern to form the common electrode.

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