KR102040654B1 - Touch sensor integrated type display device and method of fabricating the same - Google Patents

Abstract

The present invention relates to a touch sensor integrated display device and a method for manufacturing the same, which can reduce thickness and reduce the number of processes. The touch sensor integrated display device includes: a plurality of first electrodes arranged side by side; A plurality of first subpixel electrodes disposed between the plurality of first electrodes on the same layer as the plurality of first electrodes; A plurality of second electrodes formed on a different layer from the plurality of first electrodes and the plurality of first subpixel electrodes and arranged in parallel with each other; A plurality of second subpixel electrodes disposed between the plurality of second electrodes on the same layer as the plurality of second electrodes, wherein the plurality of first electrodes are arranged side by side in a first direction First electrode columns, each of the plurality of first electrodes overlapping at least one of the second subpixels, and the plurality of second electrodes parallel to the second direction crossing the first direction And constitute a plurality of aligned second electrode rows, wherein each of the plurality of second electrodes overlaps at least one of the first subpixel electrodes.

Description

TOUCH SENSOR INTEGRATED TYPE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME}

The present invention relates to a touch sensor integrated display device capable of recognizing a user's touch and a manufacturing method thereof.

Recently, various input devices such as a keyboard, a mouse, a trackball, a joystick, a digitizer, and the like have been used to configure an interface between a user and a home appliance or various information communication devices. However, the use of the input device as described above has a problem of causing inconveniences such as learning how to use and taking up space. Thus, there is an increasing demand for an input device that is convenient, simple and can reduce malfunctions. In accordance with such a request, a touch sensor has been proposed in which a user directly contacts a screen with a finger or a pen to input information.

The touch sensor is applied to various display devices because of its simplicity, less malfunction, and convenient inputting without the use of a separate input device, and the user can operate quickly and easily through the contents displayed on the screen. have.

The touch sensor may be divided into an add-on type and an on-cell type according to the structure. The top plate attaching type is a method of attaching a touch panel to a top plate of a display device after separately manufacturing a touch panel on which a display device and a touch sensor are formed. The upper plate integrated type directly forms a touch sensor on the upper glass substrate surface of the display device.

The upper plate attaching type is a structure in which a completed touch panel is mounted on a display device and is thick, and the brightness of the display device is dark, thereby degrading visibility.

On the other hand, in the case of the integrated top plate, a separate touch sensor is formed on the upper surface of the display device, so that the thickness can be reduced than that of the top plate attaching type, but the entire electrode electrode layer and the sensing electrode layer constituting the touch sensor and the insulating layer for insulating them There was a problem that the manufacturing price increases due to the increase in thickness and the number of processes.

Accordingly, there is a need for a display device that can solve the problems caused by the prior art.

The present invention is to solve the above-mentioned problems, the touch sensor for recognizing the touch of the display device and the touch sensing electrode by using the display device components as a touch sensor that can reduce the thickness and the number of processes An object of the present invention is to provide an integrated display device and a method of manufacturing the same.

The present invention can also easily adjust the size of the unit touch pixel (the basic unit for touch recognition), and touch which can improve the touch sensitivity by increasing mutual capacitance through the increase of the touch driving electrodes and the touch sensing electrodes. Another object of the present invention is to provide a sensor integrated display device and a method of manufacturing the same.

 In accordance with one aspect of the present invention, there is provided a touch sensor integrated display device including: a plurality of first electrodes arranged side by side; A plurality of first subpixel electrodes disposed between the plurality of first electrodes on the same layer as the plurality of first electrodes; A plurality of second electrodes formed on a different layer from the plurality of first electrodes and the plurality of first subpixel electrodes and arranged in parallel with each other; A plurality of second subpixel electrodes disposed between the plurality of second electrodes on the same layer as the plurality of second electrodes, wherein the plurality of first electrodes are arranged side by side in a first direction First electrode columns, each of the plurality of first electrodes overlapping at least one of the second subpixels, and the plurality of second electrodes are arranged side by side in a second direction crossing the first direction And constitute a plurality of aligned second electrode rows, wherein each of the plurality of second electrodes overlaps at least one of the first subpixel electrodes.

In accordance with another aspect of the present invention, there is provided a touch sensor integrated display device comprising: a plurality of gate lines formed side by side on a first substrate; A gate insulating film formed to cover the gate lines; A plurality of data lines formed on the gate insulating layer to intersect the gate lines; A thin film transistor formed in each of the plurality of pixel regions defined by the intersection of the gate line and the data line; A first passivation layer formed to cover the gate insulating layer on which the thin film transistor is formed; A first subpixel electrode formed in a first pixel region of the plurality of pixel regions of the first passivation layer; A first electrode formed in a second pixel region of the plurality of pixel regions of the first passivation layer; A second passivation layer formed to cover the first passivation layer on which the first pixel electrode and the first sensing electrode are formed; A second electrode formed in the first pixel region of the second passivation layer; And a second subpixel electrode formed in the second pixel region of the second passivation layer, wherein the first pixel electrode is formed in the first subpixel region through a first contact hole formed in the first passivation layer. The second pixel electrode is connected to the thin film transistor formed in the second sub pixel region through second contact holes formed in the first and second passivation layers, and the first electrode is connected to the second pixel electrode. The second electrode may be formed to face each other, and the second electrode may be formed to face the first pixel electrode.

In the above configuration, the plurality of first electrodes receive a common voltage when driving a display, and the plurality of second electrodes receive a common voltage when driving a display, and receive a touch driving voltage when touch driving, or the plurality of first electrodes. The electrodes may be supplied with a common voltage when driving a display, and may be supplied with a touch driving voltage when driving a display, and the plurality of second electrodes may be supplied with a common voltage when driving a display.

In addition, any one of the first electrode and the second pixel electrode formed to face each other, and one of the second electrode and the first pixel electrode formed to face each other are formed to include a plurality of slits.

Further, the first subpixel electrode includes an R-subpixel electrode and a G-subpixel electrode, the second subpixel electrode includes a B-subpixel electrode, and each of the plurality of first electrodes An overlapping R-subpixel electrode and the G-subpixel electrode, and each of the plurality of second electrodes is formed to overlap the G-subpixel electrode.

Further, the first subpixel electrode includes an R-subpixel electrode, the second subpixel electrode includes a G-subpixel electrode and a B-subpixel electrode, and each of the plurality of first electrodes An overlapping R-subpixel electrode, and each of the plurality of second electrodes is formed to overlap the G-subpixel electrode and the G-subpixel electrode.

In order to achieve the above object, a method of manufacturing a touch sensor integrated display device according to an embodiment of the present invention includes depositing a first conductive layer on a substrate and forming a gate line and a gate electrode using a first mask process; A region corresponding to the gate electrode by forming a gate insulating layer on the substrate on which the gate line and the gate electrode are formed and forming a semiconductor layer on the gate insulating layer, and then patterning the semiconductor layer using a second mask process Forming a semiconductor pattern on the substrate; Depositing a data metal layer as a second conductive layer on the gate insulating film on which the semiconductor pattern is formed, and patterning the data metal layer using a third mask process to form a data line, a source electrode extending from the data line, and the source electrode; Forming a first conductive pattern group including opposite drain electrodes; A first passivation layer is formed on the entire surface of the gate insulating layer on which the first conductive pattern group is formed, and the first passivation layer is etched by using a fourth mask process to partially remove the drain electrode in the first and second pixel regions. Forming first and second contact holes to expose each other; Depositing a first transparent conductive layer as a third conductive layer on the first passivation layer on which the first and second contact holes are formed, and patterning the first transparent conductive layer using a fifth mask process to form the first pixel. Forming a first subpixel electrode in an area, and forming a first electrode in the second pixel area; After forming a second passivation layer on the first subpixel electrode and the first passivation layer on which the first electrode is formed, the second passivation layer is etched by using a sixth mask process to etch the drain electrode on the second pixel region. Forming a third contact hole exposing a portion of the third contact hole; Depositing a second transparent conductive layer as a fourth conductive layer on the second passivation layer on which the third contact hole is formed, and etching the fourth conductive layer using a seventh mask process to form a second layer in the first pixel region. Forming an electrode, and forming a second pixel electrode in the second pixel region, wherein the first electrode is formed to face the second subpixel electrode, and the second electrode is formed on the first subpixel. The pixel electrode may be formed to face each other.

Further, the first subpixel electrode includes an R-subpixel electrode and a G-subpixel electrode, the second subpixel electrode includes a B-subpixel electrode, and each of the plurality of first electrodes An overlapping R-subpixel electrode and the G-subpixel electrode, and each of the plurality of second electrodes is formed to overlap the G-subpixel electrode.

The first and second electrodes and the first and second pixel electrodes may be formed of a transparent conductive material selected from indium tin oxide (ITO), indium zinc oxide (IZO), and gallium-doped zinc oxide (GZO). do.

According to the touch sensor integrated display device and the manufacturing method thereof according to the embodiment of the present invention described above, a common electrode used to form an electric field for driving the liquid crystal of the display device together with the pixel electrode is a touch driving electrode and a touch sensing electrode. Since it can be used, it is not necessary to separately form the touch driving electrode and the touch sensing electrode. Therefore, the number of processes required for forming the touch driving electrode and the touch sensing electrode can be reduced, and the thickness of the display device can be reduced by the thickness thereof.

Further, according to the touch sensor integrated display device according to the embodiment of the present invention, each touch driving electrode and each touch sensing electrode can be formed to correspond to an appropriate number of subpixels, and can be appropriately grouped using routing wiring. Therefore, the size of the unit touch pixel (the basic unit for touch recognition) can be easily adjusted as needed, and the mutual capacitance can be increased by increasing the touch driving electrodes and the touch sensing electrodes, thereby increasing the touch sensitivity. The effect can be improved.

1 is a block diagram schematically illustrating a touch sensor integrated display device according to an embodiment of the present invention;
FIG. 2 is a partially exploded perspective view schematically illustrating the display device illustrated in FIG. 1;
3 is a cross-sectional view illustrating a 1 pixel region of the thin film transistor array shown in FIG. 2;
4 is a plan view illustrating a relationship between a touch driving electrode and a touch sensing electrode of a touch sensor integrated display device according to an exemplary embodiment of the present invention;
FIG. 5 illustrates a first transparent electrode constituting R and G-subpixel electrodes and touch sensing electrodes (second common electrode) formed on a first passivation layer of a touch sensor integrated display device according to an exemplary embodiment of the present invention. Top view,
6 is a plan view illustrating touch driving electrodes (first common electrode) formed on a second passivation layer of a touch sensor integrated display device and a second transparent electrode constituting a B-subpixel according to an exemplary embodiment of the present invention;
7A is a plan view illustrating a first mask process for manufacturing a touch sensor integrated display device according to an embodiment of the present invention;
FIG. 7B is a cross-sectional view illustrating a first mask process for manufacturing a touch sensor integrated display device according to an exemplary embodiment of the present invention, taken along lines II ′ and II-II ′ of FIG. 7A;
8A is a plan view illustrating a second mask process for manufacturing a touch sensor integrated display device according to an embodiment of the present invention;
FIG. 8B is a cross-sectional view illustrating a second mask process for manufacturing a touch sensor integrated display device according to an exemplary embodiment of the present invention, taken along lines II ′ and II-II ′ of FIG. 8A;
9A is a plan view illustrating a third mask process for manufacturing a touch sensor integrated display device according to an embodiment of the present invention;
FIG. 9B is a cross-sectional view illustrating a third mask process for manufacturing a touch sensor integrated display device according to an exemplary embodiment of the present invention, taken along lines II ′ and II-II ′ of FIG. 9A;
FIG. 10A is a plan view illustrating a fourth mask process for manufacturing a touch sensor integrated display device according to an embodiment of the present invention; FIG.
FIG. 10B is a cross-sectional view illustrating a fourth mask process for manufacturing the touch sensor integrated display device according to the embodiment of the present invention, taken along line II ′ and II-II ′ of FIG. 10A;
11A is a plan view illustrating a fifth mask process for manufacturing a touch sensor integrated display device according to an embodiment of the present invention;
FIG. 11B is a cross-sectional view illustrating a fifth mask process for manufacturing the touch sensor integrated display device according to the embodiment of the present invention, taken along lines II ′ and II-II ′ of FIG. 10A;
12A is a plan view illustrating a sixth mask process for manufacturing a touch sensor integrated display device according to an embodiment of the present invention;
12B is a cross-sectional view illustrating a sixth mask process for manufacturing the touch sensor integrated display device according to the exemplary embodiment of the present invention, taken along lines II ′ and II-II ′ of FIG. 12A;
13A is a plan view illustrating a seventh mask process for manufacturing a touch sensor integrated display device according to an embodiment of the present invention;
FIG. 13B is a cross-sectional view illustrating a seventh mask process for manufacturing the touch sensor integrated display device according to the embodiment of the present invention, taken along the lines II ′ and II-II ′ of FIG. 13A.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like numbers refer to like elements throughout.

First, a touch sensor integrated display device according to an exemplary embodiment of the present invention will be described in more detail with reference to FIGS. 1 to 3. 1 is a block diagram schematically illustrating a touch sensor integrated display device according to an exemplary embodiment of the present invention, FIG. 2 is a partially exploded perspective view schematically showing the display device shown in FIG. 1, and FIG. 3 is shown in FIG. 2. Fig. 1 is a cross-sectional view showing one pixel area of the thin film transistor array.

In the following description, a touch sensor integrated liquid crystal display will be described in detail as an example of a touch sensor integrated display.

1 and 2, a touch sensor integrated liquid crystal display according to an exemplary embodiment of the present invention may include a liquid crystal display panel LCP, a host controller 10, a timing controller 11, a data driver 12, and a gate driver. 13, a power supply unit 15, a touch recognition processor 17, and the like.

The liquid crystal display panel LCP includes a color filter array CFA and a thin film transistor array TFTA formed with a liquid crystal layer (not shown) therebetween.

The thin film transistor array TFTA includes a plurality of gate lines G1 and G2 formed side by side on a first substrate SUB1 in a first direction (for example, x direction), and a plurality of gate lines G1, Data lines D1 to D9 formed in parallel in a second direction (eg, y direction) to cross each other and G2), and gate lines G1 and G2 and data lines D1 to D9 cross each other. The plurality of subpixel electrodes PX11, PX12, PX13,..., PX19, PX21, PX22, PX23,... , PX29, and first and second common electrodes disposed to face the plurality of subpixel electrodes PX11, PX12, PX13,..., PX19, PX21, PX22, PX23,..., And PX29. COM1, COM2).

In an exemplary embodiment of the present invention, three sub-pixel electrodes R (red), G (green), and B (blue) are one pixel electrode (hereinafter, referred to as a unit pixel electrode) (unit of pixel). An example of forming an electrode, two subpixel electrodes corresponding to the first common electrode COM1, and one subpixel electrode corresponding to the second common electrode COM2 will be described. However, this is merely an exemplary embodiment of the present invention, wherein the unit pixel electrode is formed of three or more subpixel electrodes, and the correspondence between the subpixel electrodes and the first and second common electrodes is as required. It is to be understood that they are adjustable and that they are included in the scope of the present invention.

The color filter array CFA includes a black matrix and a color filter (not shown) formed on the second substrate SUB2. Polarizing plates POL1 and POL2 are attached to the outer surfaces of the first substrate SUB1 and the second substrate SUB2 of the liquid crystal display panel LCP, respectively, and the first and second substrates SUB1 and SUB2 are in contact with the liquid crystal. On the inner surface, alignment films (not shown) for setting the pretilt angle of the liquid crystal are formed, respectively. A column spacer may be formed between the color filter array CFA and the thin film transistor array TFTA of the liquid crystal display panel LCP to maintain a cell gap of the liquid crystal cell.

The backlight unit (not shown) is disposed under the thin film transistor array TFTA. The backlight unit includes a plurality of light sources, and uniformly irradiates light onto the thin film transistor array TFTA and the color filter array CFA. The backlight unit may be implemented as a direct type backlight unit or an edge type backlight unit. The light source of the backlight unit may include any one or two or more light sources of a hot cathode fluorescent lamp (HCFL), a cold cathode fluorescent lamp (CCFL), an external electrode fluorescent lamp (EEFL), and a light emitting diode (LED).

Meanwhile, the first and second common electrodes COM1 and COM2 are formed on the second substrate SUB2 in a vertical electric field driving method such as twisted nematic (TN) mode and vertical alignment (VA) mode, and are in plane. In a horizontal electric field driving method such as a switching mode and a ring field switching (FFS) mode, the pixel electrode PX is formed on the first substrate SUB1 together with the pixel electrode PX. In the embodiment of the present invention will be described by taking a horizontal electric field driving method as an example.

FIG. 3 is a cross-sectional view of a portion of the thin film transistor array illustrated in FIG. 2, wherein the subpixel region includes three subpixel regions of an R-subpixel region, a G-subpixel region, and a B-subpixel region. The relationship between the first common electrode COM1, the second common electrode COM2, the subpixel electrodes PX11, PX12, and PX13, the touch driving electrode TX11, and the touch sensing electrode RX1 is illustrated.

1 and 3, the first common electrode COM1 is disposed to face each other with the R-subpixel electrode PX11 and the G-subpixel electrode PX12 and the second passivation layer PAS2 interposed therebetween. The second common electrode COM2 is disposed to face each other with the B-subpixel electrodes PX13 and the second passivation layer PAS2 interposed therebetween. The first common electrode COM1 is formed on the second passivation layer PAS2 in the R-subpixel region and the G-subpixel region, and the second common electrode COM2 is formed in the second passivation layer PAS2 in the B-subpixel region. The difference is that it is formed at the bottom.

In an embodiment of the present invention, the first common electrode COM1 serves as the touch driving electrodes TX11, TX12, TX13, TX21, TX21, TX22, TX23, and the second common electrode COM2 is the touch sensing electrode RX1. In this case, the first common electrode COM1 serves as the touch sensing electrode, and the second common electrode COM2 serves as the touch driving electrode. It may be.

Hereinafter, a structure of a touch sensor integrated display device according to an exemplary embodiment of the present invention will be described in more detail with reference to FIGS. 1 to 3.

In the touch sensor integrated display device according to the exemplary embodiment, the gate lines G1 and G2 and the data lines D1 to D9 are formed on the first substrate SUB1 of the thin film transistor array TFTA. And the thin film transistors TFT formed at the intersection of the gate lines G1 and G2 and the data lines D1 to D9, and the gate lines G1 and G2 and the data lines D1 to D9. Subpixel electrodes PX11, PX12, PX13, ..., PX19, PX21, PX22, PX23, ..., PX29 formed in a region defined by the intersection of the subpixel electrodes PX11, PX12, PX13,..., PX19, PX21, PX22, PX23,..., And PX29 are included. In the embodiment of the present invention, since the first common electrode COM1 serves as the touch sensing electrode RX, and the second common electrode COM2 also serves as the touch driving electrode TX, the following description will be made. If necessary, these may be referred to as first common electrode COM1 or touch driving electrodes TX11, TX12, TX13, TX21, TX22, TX23, second common electrode COM2, or touch sensing electrodes RX1, RX2, and RX3. do.

In the following description, the touch driving electrode is indicated as TX11, TX12, TX13, TX21, TX22, TX23, etc., when it is necessary to specify according to the position, and simply denoted as TX when used as a general name, and the touch sensing electrode If it is necessary to specify according to the position, it is indicated as RX1, RX2, RX3, etc., and when it is used as a general name, it is simplified and indicated as RX.

In the above configuration, the thin film transistor TFT may include a gate electrode G extending from the gate line G1, and a gate electrode G on the gate insulating layer GI covering the gate line G1 and the gate electrode G. FIG. ) And a source electrode S extending from the data line D1 formed on the first passivation layer PAS1 covering the active layer A ) And a drain electrode D formed so as to face the.

The location where the subpixel electrode and the common electrode are formed on the first passivation layer PAS1 varies according to the subpixel regions. Referring to FIG. 3, an R-subpixel electrode PX11 is formed on the first passivation layer PAS1 of the R-subpixel region, and a G-subpixel electrode is formed on the first passivation layer PAS1 of the G-subpixel region. The PX12 is formed, but the second common electrode COM2 as the touch sensing electrode RX1 is formed on the first passivation layer PAS1 in the B-subpixel region.

In addition, on the second passivation layer PAS2 covering the R-subpixel electrode PX11, the G-subpixel electrode PX12, and the second common electrode COM2, the second passivation layer PAS2 of the R-subpixel region. The first common electrode COM1 as the touch driving electrode TX11 is formed on the second subpixel electrode PX2 to overlap the R-subpixel electrode PX11, and the G-subpixel electrode PX12 is formed on the second passivation layer PAS2 of the G-subpixel region. The first common electrode COM1 as the touch driving electrode TX11 is formed so as to overlap each other, but the B-subpixel electrode PX13 is formed on the second passivation layer PAS2 of the B-subpixel region.

In the R-subpixel region, the R-subpixel electrode PX11 is connected to the drain electrode D of the thin film transistor TFT through the first contact hole CH1, and the G-subpixel electrode in the G-subpixel region. The PX12 is connected to the drain electrode D of the thin film transistor TFT through the second contact hole CH2, and the B-subpixel electrode PX13 is connected to the first and second passivation layers in the B-subpixel area. It is connected to the drain electrode D of the thin film transistor TFT through the third contact hole CH3 penetrating the PAS1 and PAS2, respectively.

In an embodiment of the present invention, each of the R-subpixel electrode PX11, the G-subpixel electrode PX12, and the second common electrode COM2 formed on the first passivation layer PAS1 is illustrated in FIG. 5. As shown in FIG. 6, each of the first common electrode COM1 and the B-subpixel electrode PX13 formed on the second passivation layer PAS2 has no slits, as shown in FIG. 6. SL). However, the present invention is not limited thereto, and the R-subpixel electrode PX11, the G-subpixel electrode PX12, and the B-subpixel electrode PX13, the first common electrode COM1, and the second common electrode are not limited thereto. The electrode COM2 may be formed to have a slotless shape if one of the common electrode and the subpixel electrode facing each other has a slot shape.

As can be seen from FIG. 3, in the exemplary embodiment of the present invention, the common electrode includes a plurality of first common electrodes COM1 and a plurality of second common electrodes COM2 and is formed on different layers. . The R and G-subpixel electrodes PX11 and PX12 and the B-subpixel electrode PX13 constituting the unit pixel electrode are also formed on different layers.

Next, the relationship between the touch driving electrode and the touch sensing electrode of the touch sensor integrated display device according to the exemplary embodiment of the present invention will be described in detail with reference to FIGS. 4 to 6.

FIG. 4 is a plan view illustrating a relationship between the touch driving electrode TX and the touch sensing electrode RX of the touch sensor integrated display device according to an exemplary embodiment of the present invention. For convenience of description, the pixel electrode configuration is not illustrated. FIG. 5 illustrates a first transparent electrode constituting R and G-subpixel electrodes and touch sensing electrodes (second common electrode) formed on a first passivation layer of a touch sensor integrated display device according to an exemplary embodiment of the present invention. FIG. 6 is a plan view illustrating the touch driving electrodes (first common electrode) formed on the second passivation layer of the touch sensor integrated display device according to the exemplary embodiment of the present invention, and the second transparent electrode constituting the B-subpixel. It is a plan view showing the.

In the following description with reference to FIGS. 4 and 5, the R and G-subpixel electrodes PX11, PX12; PX14, PX15; PX17, PX18; PX21, PX22; PX24, PX25; PX27, PX28 and B-subpixels Wiring relationships connected to (PX13, PX16, PX19) will be omitted for simplicity of the drawings. Although not shown in FIGS. 4 and 5, R and G-subpixel electrodes (PX11, PX12; PX14, PX15; PX17, PX18; PX21, PX22; PX24, PX25; PX27, PX28) and B-subpixel As shown in FIGS. 1 and 3, the wiring relationship connected to the fields PX13, PX16, and PX19 is connected to the source S of the thin film transistor TFT so that the data voltage is applied through the data line. It can be seen that.

Referring to FIG. 4, the touch driving electrodes TX11, TX21; TX12, TX22; TX13, TX23 and the touch sensing electrodes RX1, RX2, and RX3 are mutually aligned along a first direction (eg, x direction). Alternately placed.

The touch driving electrodes TX11, T12, and TX13 of the first row are configured to be connected to each other in the first direction by a connecting part, and the touch driving electrodes TX21, T22, TX23 of the second row are also connected by the connecting part. And are connected to each other in a first direction. The touch driving electrodes TX11, T12 and TX13 in the first row and the touch driving electrodes TX21, T22 and TX23 in the second row are formed to be separated from each other. The touch driving voltage Vtsp is supplied to the touch driving electrodes TX11, TX12, TX13; TX21, TX22, TX23 of the first and second rows through the power supply unit 15 during touch driving, and when driving the display. The common voltage Vcom is supplied through the power supply unit 15. Accordingly, the touch driving electrodes TX11, TX2, TX13; TX21, TX22, TX23 in the first and second rows function as touch driving electrodes when the touch driving voltage Vtsp is applied, and the common voltage Vcom. When applied, it functions as a common electrode.

The touch sensing electrodes RX1, RX2, and RX3 in the first to third columns are arranged parallel to each other in a second direction (eg, the y-axis direction), and the touch electrodes of the first or second row ( Touch drive electrodes TX11, TX12, TX13; TX21, TX22, TX23 in the first and second rows except for the intersection with the connection portion connecting TX11, TX12, TX13, or TX21, TX22, TX23. It is formed so as not to overlap.

The touch sensing electrode columns RX1, RX2, and RX3 are connected to the touch recognition processor 17 so that the touch recognition processor 17 can detect the touch position by measuring the change of the correction capacitance before and after the touch. .

In the touch sensor integrated display device according to the embodiment of the present invention, each of the touch driving electrodes TX11, TX12, TX13; TX21, TX22, TX23 in the first row and the second row forms a touch driving electrode line. The touch sensing electrodes RX1, RX2, and RX3 also form one touch sensing line RX1, RX2, and RX3, and each touch driving electrode has a size corresponding to two subpixel electrodes, and each touch Since the sensing electrode has a size corresponding to one subpixel electrode, a unit touch pixel (a basic unit for touch recognition) having a size of a unit pixel electrode can be performed.

Referring to FIG. 5, R-subpixel electrodes PX11, PX21, PX14, PX24, PX17 and PX27 and G-subpixel electrodes PX12, are located in regions adjacent to the touch sensing electrodes RX1, RX2, and RX3. PX22, PX15, PX25, PX18, and PX28 are formed respectively. Referring to FIG. 6, B-subpixel electrodes PX13, PX16, PX19, and PX23 are located in regions adjacent to the touch driving electrodes TX11, TX12, TX13, TX21, TX22, and TX23 of neighboring first and second rows. , PX26, PX29) are formed.

Referring back to FIG. 1, the gate driver 13 sequentially outputs a gate pulse (or scan pulse) in the display mode under the control of the timing controller 11, and sets the swing voltage of the output to the gate high voltage VGH and the gate. Shift to low voltage VGL. The gate pulse output from the gate driver 13 is sequentially supplied to the gate lines G1 and G2 in synchronization with the data voltage output from the data driver 12. The gate high voltage VGH is a voltage higher than or equal to the threshold voltage of the thin film transistor TFT, and the gate low voltage VGL is lower than the threshold voltage of the thin film transistor TFT. Gate driving integrated circuits (ICs) of the gate driver 13 may be connected to the gate lines G1 and G2 formed on the first substrate SUB1 of the thin film transistor array TFTA through a tape automated bonding (TAP) process. The gate in panel (GIP) process may be directly formed on the first substrate SUB1 of the thin film transistor array TFTA together with the pixel.

The data driver 12 samples and latches the digital video data RGB under the control of the timing controller 11. The data driver 12 inverts the polarity of the data voltage of the digital video data RGB based on the positive / negative gamma compensation voltages GMA1 to GMAn supplied from the power supply unit 15, thereby providing the positive / negative data. Output voltage. The positive / negative data voltage output from the data driver 12 is synchronized with the gate pulse output from the gate driver 13. Each of the source driving integrated circuits (ICs) of the data driver 12 is connected to the data lines D1, D2, D3, ... Dn by a chip on glass (COG) process or a tape automated bonding (TAB) process. Can be connected. The source driving IC may be integrated in the timing controller 11 to be implemented as a one chip IC together with the timing controller 11.

The timing controller 11 controls timing control signals for controlling the operation timing of the gate driver 13 and the data driver 12 using timing signals necessary for driving the display device supplied from an external host controller 10. Occurs. Timing control signals for controlling the operation timing of the gate driver 13 and the data driver 12 include gate timing control signals for controlling the operation timing of the gate driver 13, operation timing and data of the data driver 12. And a data timing control signal for controlling the polarity of the voltage.

The gate timing control signal includes a gate start pulse (GSP), a gate shift clock (GSC), a gate output enable signal (Gate Output Enable, GOE), and the like. The gate start pulse GSP is applied from the gate driver 13 to the first gate driver IC that outputs the gate pulse first in every frame period to control the shift start timing of the gate driver IC. The gate shift clock GSC is input to the gate driving ICs of the gate driver 13 in common to shift the gate start pulse GSP. The gate output enable signal GOE controls the output timing of the gate driver ICs of the gate driver 13.

The data timing control signal includes a source start pulse (SSP), a source sampling clock (SSC), a polarity control signal (POL), and a source output enable signal (SOE). It includes. The source start pulse SSP is applied to the first source driving IC that samples the data first in the data driver 12 to control the data sampling start timing. The source sampling clock SSC is a clock signal that controls the sampling timing of data in the source driving ICs based on the rising or falling edge. The polarity control signal POL controls the polarity of the data voltages output from the source driving ICs. The source output enable signal SOE controls the output timing of the source driving ICs. When the digital video data RGB is input to the data driver 12 through a mini low voltage differential signaling (LVDS) interface, the source start pulse SSP and the source sampling clock SSC may be omitted.

The power supply unit 15 includes a DC-DC converter including a pulse width modulation (PWM) modulation circuit, a boost converter, a regulator, a charge pump, a voltage divider circuit, an operation amplifier, and the like. Implemented by (DC-DC Converter). The power supply unit 15 adjusts an input voltage from the host controller 10 to control the liquid crystal display panel LCP, the data driver 12, the gate driver 13, the timing controller 11, and the backlight unit (not shown). Generates power for driving.

The powers output from the power supply unit 15 include the high potential power voltage VDD, the gate high voltage VGH, the gate low voltage VGL, the common voltage Vcom, and the positive / negative gamma reference voltages VGMA1 to. VGMAn), touch driving voltage Vtsp, and the like. Among these voltages, the common voltage Vcom is supplied to the first and second common electrodes COM1 and COM2 under the control of the host controller 10 during display driving. The common voltage Vcom may be configured to be supplied to the first and second common electrodes COM1 and COM2 under the control of the timing controller 11. Meanwhile, the touch driving voltage Vtsp is supplied to the touch driving electrodes TX11, TX12, TX13; TX21, TX22, TX23 under the control of the host controller 10 during touch driving. The touch driving voltage Vtsp may be configured to be supplied to the touch driving electrodes TX11, TX12, TX13; TX21, TX22, TX23 under the control of the timing controller 11. In addition, in the embodiment of FIG. 1 of the present invention, the touch driving voltage Vtsp is shown to be supplied to the touch driving electrodes TX11, TX12, TX13; TX21, TX22, TX23 through the power supply unit 15. The present invention is not limited thereto. For example, the touch driving voltage Vtsp is the touch driving electrodes TX11, TX12, TX13; TX21, TX22, TX23 through the touch recognition processor 17 controlled by the host controller 10 or the timing controller 11. ) May be supplied.

The host controller 10 transmits digital video data (RGB) of the input image and timing signals (Vsync, Hsync, DE, MCLK) required for driving the display to LVDS interface (Low Voltage Difference Signaling) and TMDS (Transition Minimized Differential Signaling). It transmits to the timing controller 11 through an interface such as an interface. The host controller 10 may also be supplied with the same common voltage Vcom to the plurality of divided first and second common electrodes COM1 and COM2 when driving the display for displaying an image on the screen of the liquid crystal display. The control signal Vin is supplied to the power supply 15 so that the touch driving voltage Vtsp is supplied to the touch driving electrodes TX11, TX12, TX13; TX21, TX22, TX23 during touch driving for touch recognition. The control signal Vin is supplied to the power supply unit 15 so as to be possible.

The touch recognition processor 17 differentially amplifies the voltage of the initial capacitance of each of the touch sensing electrodes RX1, RX2, and RX3 connected through the wiring, and the voltage of the touch capacitance after the touch, and converts the result into digital data. The touch recognition processor 17 determines a touch position where a touch is made based on a difference between the initial capacitance of the touch sensing electrodes RX1, RX2, and RX3 and the capacitance measured after the touch by using a touch recognition algorithm. The touch coordinate data indicating the touch position is output to the host controller 10.

As described above, the touch sensing electrodes RX1, RX2, and RX3 according to the embodiment of the present invention form a touch sensing electrode line in the y-axis direction, and the touch driving electrodes TX11, TRX12, ..., TX23. ) Forms a touch driving electrode line in the x-axis direction, and thus crosses each other. Therefore, when a touch is performed on the display device, a change in mutual capacitance occurs between the touch sensing electrode line and the touch driving electrode line, and the position at which the change in the mutual capacitance occurs can be detected by measuring this.

In particular, according to the touch sensor integrated display device according to an exemplary embodiment of the present invention, each touch driving electrode has a size corresponding to two subpixel electrodes, and each touch sensing electrode has a size corresponding to one subpixel electrode. The unit touch pixel (the basic unit for touch recognition) has the size of the unit pixel electrode. Therefore, since the mutual capacitance between the touch driving electrodes and the touch sensing electrodes can be increased, an effect of improving the touch sensitivity can be obtained.

Hereinafter, a method of manufacturing a touch sensor integrated display device according to an exemplary embodiment of the present invention will be described with reference to FIGS. 7A to 13B. Hereinafter, for convenience of description, a first subpixel area (TX11-PX11 area or TX11-PX12 area) including a touch driving electrode TX11 and an R-subpixel electrode PX11 or a G-subpixel electrode PX12. And a second subpixel region (RX1-PX13 region) including the touch sensing electrode RX1 and the B-subpixel electrode PX13. 7A to 13B, the upper picture shows a first subpixel area TX11-PX11 or TX11-formed of a touch driving electrode TX11 and an R-subpixel electrode PX11 or a G-subpixel electrode PX12. PX12 region is shown, and the lower figure shows a second subpixel region (RX1-PX13 region) consisting of the touch sensing electrode RX1 and the B-subpixel electrode PX13. Each subpixel area TX11-PX11, TX11-PX12, and RX1-PX13 is formed by a pair of top and bottom gate lines and a pair of left and right data lines, but to simplify the drawings, one gate line will be described in the following description of the manufacturing method. Only GL and one data line DL are shown.

7A is a plan view illustrating a first mask process for manufacturing a touch sensor integrated display device according to an embodiment of the present invention, and FIG. 7B is a first view for manufacturing a touch sensor integrated display device according to an embodiment of the present invention. A cross sectional view showing a mask process, taken along lines II ′ and II-II ′ of FIG. 7A.

Referring to FIGS. 7A and 7B, a gate metal layer as a first conductive layer is entirely deposited through a deposition process such as sputtering on a substrate SUB1, and then a gate line on the substrate SUB1 using a first mask process. GL and a gate electrode G extending from the gate line GL are formed.

In more detail, the gate metal layer as the first conductive layer is entirely deposited on the substrate SUB1 through a deposition process such as sputtering, and then a photoresist is entirely applied on the substrate SUB1, and then the first By performing a photolithography process using a mask, a first photoresist pattern (not shown) exposing the gate metal layer is formed. After the gate metal layer exposed by the first photoresist pattern is removed by wet etching, the remaining first photoresist pattern is ashed, thereby forming the gate line GL and the gate line GL on the substrate SUB1. To form a gate electrode (G). The gate metal layer is selected from materials such as aluminum (Al) -based metal, copper (Cu), chromium (Cr), molybdenum (Mo) and the like.

8A is a plan view illustrating a second mask process for manufacturing a touch sensor integrated display device according to an embodiment of the present invention, and FIG. 8B is a second view for manufacturing a touch sensor integrated display device according to an embodiment of the present invention. A cross sectional view showing a mask process, taken along lines II ′ and II-II ′ of FIG. 8A.

8A and 8B, after the gate insulating film GI is formed on the substrate SUB1 on which the gate line GL including the gate electrode G is formed, a semiconductor layer is formed on the gate insulating film GI. do. Thereafter, a photolithography process using a second mask is applied after the photoresist is entirely coated on the semiconductor layer, thereby exposing a second photoresist pattern exposing the remaining regions except the regions corresponding to the channel regions (not shown). To form. Subsequently, the semiconductor pattern A is formed by removing the remaining second photoresist pattern after etching the semiconductor layer exposed by the second photoresist pattern.

FIG. 9A is a plan view illustrating a third mask process for manufacturing a touch sensor integrated display device according to an embodiment of the present invention, and FIG. 9B is a third view for manufacturing a touch sensor integrated display device according to an embodiment of the present invention. A cross sectional view showing a mask process, taken along lines II ′ and II-II ′ of FIG. 9A.

9A and 9B, a data metal layer serving as a second conductive layer is deposited on a gate insulating film on which the semiconductor pattern A is formed, and the data metal layer is patterned by using a third mask process. A first conductive pattern group including a source electrode S extending from the line and a drain electrode D facing the source electrode S is formed.

In more detail, the data metal layer as the second conductive layer is deposited on the gate insulating layer GI on which the semiconductor pattern A is formed, the photoresist is entirely coated on the data metal layer, and then photolithography using a third mask is performed. By performing the process, a third photoresist pattern (not shown) is formed to expose the data metal layer except for the region where the data line, the source electrode, and the drain electrode are to be formed. The data metal layer exposed by the third photoresist pattern is etched and removed, and the third photoresist pattern remaining on the data metal layer is removed to cross the gate line GL with the gate insulating layer GI therebetween. A thin film transistor including a data line DL, a source electrode S extending from the data line DL, and a drain electrode D facing the source electrode S is formed.

FIG. 10A is a plan view illustrating a fourth mask process for manufacturing a touch sensor integrated display device according to an embodiment of the present invention, and FIG. 10B is a fourth view for manufacturing a touch sensor integrated display device according to an embodiment of the present invention. A cross sectional view showing a mask process, taken along lines II ′ and II-II ′ of FIG. 10A.

10A and 10B, a first protective film is formed on the entire surface of the gate insulating film on which the first conductive pattern group is formed, and the first protective film is etched using a fourth mask process to expose a portion of the drain electrode. First to third contact holes CH1, CH2 and CH3 are formed, respectively.

In more detail, the first passivation layer PAS1 is formed on the entire surface of the gate insulating layer GI on which the data line DL and the thin film transistor TFT are formed, and the photoresist is formed on the first passivation layer PAS1. After applying the entire surface, a photolithography process using a fourth mask is performed to form a fourth photoresist pattern (not shown) for exposing a part of the drain electrode D. FIG. The first to third contact holes CH1 exposing a part of the drain electrode D by removing the remaining fourth photoresist pattern after etching the first passivation layer PAS1 exposed by the fourth photoresist pattern. , CH2, CH3). Here, the first passivation film PAS1 is formed by using an organic low dielectric material such as photoacryl (PAC).

11A is a plan view illustrating a fifth mask process for manufacturing a touch sensor integrated display device according to an embodiment of the present invention, and FIG. 11B is a fifth view for manufacturing a touch sensor integrated display device according to an embodiment of the present invention. A cross sectional view showing a mask process, taken along lines II ′ and II-II ′ of FIG. 11A.

Referring to FIGS. 11A and 11B, a first transparent conductive layer as a third conductive layer is deposited on the first passivation layer PAS1 having the first to third contact holes CH1, CH2, and CH3, and the fifth The R-subpixel electrode PX11 and the G-subpixel electrode PX12 and the second common electrode COM2 serving as the touch sensing electrode RX1 are formed by patterning the first transparent conductive layer using a mask process.

In more detail, the third conductive layer is deposited on the first passivation layer PAS1 having the first to second contact holes CH1, CH2, and CH3 through a deposition process such as plasma-enhanced chemical vapor deposition (PECVD). The first transparent conductive layer as a layer is deposited on the entire surface. Subsequently, after the photoresist is entirely formed on the first transparent conductive layer, a photolithography process using a fifth mask is performed to thereby form an R-subpixel electrode PX11 in the R-subpixel region TX11-PX11. Except for the remaining regions, the remaining regions except for the region where the G-subpixel electrode PX12 is to be formed are exposed in the G-subpixel region TX11-PX12, and the B-subpixel regions RX1-PX13 are exposed. A fifth photoresist pattern (not shown) is formed to expose a region other than the region where the touch sensing electrode RX1 is to be formed. The R-subpixel electrode PX11 is formed in the R-subpixel area TX11-PX11 by removing the fifth photoresist pattern remaining after etching the transparent conductive layer exposed by the fifth photoresist pattern. The G-subpixel electrode PX12 is formed in the G-subpixel region TX11-PX12, and the touch sensing electrode RX1 is formed in the B-subpixel region RX1-PX13. As the first transparent conductive layer, transparent conductive materials such as indium tin oxide (ITO), indium zinc oxide (IZO), and gallium-doped zinc oxide (GZO) are used, and the R and G-subpixel electrodes PX11 and PX12 are used. ) Is connected to the drain electrodes D of the thin film transistor TFT through the first and second contact holes CH1 and CH2 formed in the first passivation layer PAS1, respectively.

12A is a plan view illustrating a sixth mask process for manufacturing a touch sensor integrated display device according to an embodiment of the present invention, and FIG. 12B is a sixth view for manufacturing a touch sensor integrated display device according to an embodiment of the present invention. A cross sectional view showing a mask process, taken along lines II ′ and II-II ′ of FIG. 12A.

12A and 12B, after forming the second passivation layer PAS2 on the first passivation layer PAS1 on which the R and G-subpixel electrodes PX11 and PX12 and the touch sensing electrode RX1 are formed, the second passivation layer PAS2 is formed. The fourth contact hole CH4 exposing a part of the drain electrode D of the thin film transistor TFT formed in the B-subpixel region RX1-PX13 by etching the second passivation layer PAS2 using a six mask process. To form.

In more detail, the second passivation layer PAS2 is formed on the entire surface of the first passivation layer PAS1 on which the R and G subpixel electrodes PX11 and PX12 and the touch sensing electrode RX1 are formed. Part of the drain electrode D of the thin film transistor TFT formed in the B-subpixel regions RX1-PX13 by performing a photolithography process using a sixth mask after the photoresist is entirely coated on the passivation layer PAS2. To form a sixth photoresist pattern (not shown). The fourth contact hole CH4 exposing a part of the drain electrode D is formed by removing the remaining sixth photoresist pattern after etching the second passivation layer PAS2 exposed by the sixth photoresist pattern. do. Here, the second passivation film PAS2 is formed using an organic low dielectric material such as photoacryl (PAC).

The fourth contact hole CH4 of the present invention is formed by removing the second passivation layer PAS2 filled in the third contact hole CH3 formed by etching the first passivation layer PAS in the fourth mask process. The first and second passivation layers PAS1 and PAS2 may be removed in the sixth mask process without forming the third contact hole CH3 in the fourth mask process.

FIG. 13A is a plan view illustrating a seventh mask process for manufacturing a touch sensor integrated display device according to an embodiment of the present invention, and FIG. 13B is a seventh view for manufacturing a touch sensor integrated display device according to an embodiment of the present invention. A cross sectional view showing a mask process, taken along lines II ′ and II-II ′ of FIG. 13A.

13A and 13B, a second transparent conductive layer as a fourth conductive layer is deposited on the second passivation layer PAS2 having the fourth contact hole CH4, and the fourth conductive layer is formed by using a seventh mask process. The touch driving electrode TX11 and the B-subpixel electrode PX13 are formed by etching the layer.

In more detail, the second transparent conductive layer serving as the fourth conductive layer is deposited on the entire surface of the second passivation layer PAS2 on which the fourth contact hole CH4 is formed through a deposition process such as sputtering. Thereafter, the photoresist is entirely formed on the fourth conductive layer and the photolithography process using the seventh mask is performed, whereby the touch driving electrodes TX11 are formed in the R and G-subpixel regions TX11-PX11 and TX11-PX12. A seventh photoresist pattern (not shown) which exposes a region other than a region to be formed, and exposes a region other than a region where the B-subpixel electrode PX13 is to be formed in the B-subpixel regions RX1-PX13. To form. In addition, by removing the remaining seventh photoresist pattern after etching the transparent conductive layer exposed by the seventh photoresist pattern, the touch driving electrode is disposed in the R and G-subpixel regions TX11-PX11 and TX11-PX12. TX11 is formed, and the B-subpixel electrode PX13 is formed in the B-subpixel region RX1 -PX13. The touch driving electrode TX11 and the B-subpixel electrode PX13 are formed to have a plurality of slits SL and are formed of a transparent conductive material such as ITO, IZO, or GZO. In addition, the B-subpixel electrode PX13 is formed in the B-subpixel region RX1-PX13 through the fourth contact hole CH4 penetrating the first and second passivation layers PAS1 and PAS2. Is connected to the drain electrode (D).

According to the touch sensor integrated display device and the manufacturing method thereof according to the embodiment of the present invention described above, a common electrode used to form an electric field for driving the liquid crystal of the display device together with the pixel electrode is a touch driving electrode and a touch sensing electrode. Since it can be used, it is not necessary to form a touch sensing electrode separately. Therefore, the number of processes required for forming the touch sensing electrode can be reduced, and the thickness of the display device can be reduced by the thickness thereof.

Meanwhile, according to the touch sensor integrated display device according to the exemplary embodiment of the present invention, each touch driving electrode has a size corresponding to two subpixel electrodes, and each touch sensing electrode has a size corresponding to one subpixel electrode. Although described, the present invention is not limited thereto.

For example, each touch driving electrode and each touch sensing electrode according to an embodiment of the present invention may be formed in a size corresponding to several or tens of subpixels as necessary. In this case, since each touch driving electrode and each touch sensing electrode can be formed to correspond to an appropriate number of subpixels, mutual capacitance can be increased by increasing touch driving electrodes and touch sensing electrodes, thereby improving touch sensitivity. You can get the effect.

In addition, the touch driving electrodes and the touch sensing electrodes according to the exemplary embodiment of the present invention may be grouped using routing lines. That is, a plurality of touch driving electrodes and touch sensing electrodes may be bundled and grouped in one routing line. In this case, an effect of easily adjusting the size of the unit touch pixel (the basic unit for touch recognition) can be obtained.

Those skilled in the art will appreciate that various changes and modifications can be made without departing from the technical spirit of the present invention. Although in the description of the above embodiment, the unit pixel electrode of the present invention is composed of three subpixel electrodes R (red), G (green), and B (blue), and faces or overlaps with the R and G-subpixel electrodes. The first common electrode COM1 serves as the touch driving electrode, and the second common electrode facing or overlapping with the B-subpixel electrode functions as the touch sensing electrode, but the present invention is not limited thereto. For example, the first common electrode functioning as the touch driving electrode overlaps the R-subpixel electrode, and the second common electrode functioning as the touch sensing electrode is formed to overlap the G and B-subpixel electrodes, or touches. The first common electrode serving as the driving electrode may overlap the G and B-subpixel electrodes, and the second common electrode may be formed to overlap the R-subpixel electrode. In addition, the first common electrode serving as the touch driving electrode initially overlaps with the R, G, and B subpixel electrodes, and the second common electrode serving as the touch sensing electrode serves as the next R, G, and B subpixel electrodes. It may be formed to overlap with. Further, the unit pixel electrode may be composed of four subpixel electrodes R (red), G (green), B (blue), and W (white). Arrangements of the first and second common electrodes overlapping the subpixel electrodes may be variously combined. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the invention but should be defined by the claims.

10: host controller 11: timing controller
12: data driver 13: gate driver
15: power supply unit 17: touch recognition processor
SUB1, SUB2: Substrate GL, G1, G2: Gate Line
GI: gate insulating film A: semiconductor pattern
DL, D1, D2, ...: data lines PAS1, PAS2: protective film
PX11, PX12, PX13, PX21, PX22, PX23: subpixel electrode
TX: Touch drive electrode RX: Touch sensing electrode
COM1, COM2: Common electrode CFA: Color filter array
TFTA: Thin Film Transistor Array

Claims (10)

A plurality of first electrodes arranged parallel to each other;
A plurality of first subpixel electrodes disposed between the plurality of first electrodes on the same layer as the plurality of first electrodes;
A plurality of second electrodes formed on a different layer from the plurality of first electrodes and the plurality of first subpixel electrodes and arranged in parallel with each other;
A plurality of second subpixel electrodes disposed between the plurality of second electrodes on the same layer as the plurality of second electrodes,
The plurality of first electrodes constitutes a plurality of first electrode rows arranged side by side in a first direction, each of the plurality of first electrodes overlapping at least one of the second subpixels to form a first electric field. Forming,
The plurality of second electrodes constitutes a plurality of second electrode rows arranged side by side in a second direction crossing the first direction, wherein each of the plurality of second electrodes comprises at least one of the first subpixel electrodes. The touch sensor integrated display device, characterized in that overlapping with one to form a second electric field.
A plurality of gate lines formed side by side on the first substrate;
A gate insulating film formed to cover the gate lines;
A plurality of data lines formed on the gate insulating layer to intersect the gate lines;
A thin film transistor formed in each of the plurality of pixel regions defined by the intersection of the gate line and the data line;
A first passivation layer formed to cover the gate insulating layer on which the thin film transistor is formed;
A first subpixel electrode formed in a first pixel region of the plurality of pixel regions of the first passivation layer;
A first electrode formed in a second pixel region of the plurality of pixel regions of the first passivation layer;
A second passivation layer formed to cover the first passivation layer on which the first pixel electrode and the first sensing electrode are formed;
A second electrode formed in the first pixel region of the second passivation layer;
A second subpixel electrode formed in the second pixel region of the second passivation layer,
The first pixel electrode is connected to the thin film transistor formed in the first sub pixel region through a first contact hole formed in the first passivation layer.
The second pixel electrode is connected to the thin film transistor formed in the second sub pixel region through second contact holes formed in the first and second passivation layers.
And the first electrode is formed to face the second pixel electrode, and the second electrode is formed to face the first pixel electrode.
The method according to claim 1 or 2,
The plurality of first electrodes receive a common voltage when driving a display.
The plurality of second electrodes are supplied with a common voltage when driving a display and a touch driving voltage when a touch driving is applied.
The method according to claim 1 or 2,
The plurality of first electrodes receive a common voltage when driving a display, and receive a touch driving voltage when driving a touch.
And a plurality of second electrodes are supplied with a common voltage when the display is driven.
The method according to claim 1 or 2,
One of the first electrode and the second pixel electrode formed to face each other, and one of the second electrode and the first pixel electrode formed to face each other includes a plurality of slits. Display.
The method according to claim 1 or 2,
The first subpixel electrode includes an R-subpixel electrode and a G-subpixel electrode, the second subpixel electrode includes a B-subpixel electrode,
Each of the plurality of first electrodes overlaps the R-subpixel electrode and the G-subpixel electrode, and each of the plurality of second electrodes overlaps the G-subpixel electrode. Integrated display
The method according to claim 1 or 2,
The first subpixel electrode includes an R-subpixel electrode, the second subpixel electrode includes a G-subpixel electrode and a B-subpixel electrode,
Each of the plurality of first electrodes overlaps the R-subpixel electrode, and each of the plurality of second electrodes overlaps the G-subpixel electrode and the G-subpixel electrode. Integrated display
Depositing a first conductive layer on the substrate and forming a gate line and a gate electrode using a first mask process;
A region corresponding to the gate electrode by forming a gate insulating layer on the substrate on which the gate line and the gate electrode are formed and forming a semiconductor layer on the gate insulating layer, and then patterning the semiconductor layer using a second mask process Forming a semiconductor pattern on the substrate;
Depositing a data metal layer as a second conductive layer on the gate insulating film on which the semiconductor pattern is formed, and patterning the data metal layer using a third mask process to form a data line, a source electrode extending from the data line, and the source electrode; Forming a first conductive pattern group including opposite drain electrodes;
A first passivation layer is formed on the entire surface of the gate insulating layer on which the first conductive pattern group is formed, and the first passivation layer is etched by using a fourth mask process to partially remove the drain electrode in the first and second pixel regions. Forming first and second contact holes to expose each other;
Depositing a first transparent conductive layer as a third conductive layer on the first passivation layer on which the first and second contact holes are formed, and patterning the first transparent conductive layer using a fifth mask process to form the first pixel. Forming a first subpixel electrode in an area, and forming a first electrode in the second pixel area;
After forming a second passivation layer on the first subpixel electrode and the first passivation layer on which the first electrode is formed, the second passivation layer is etched by using a sixth mask process to etch the drain electrode on the second pixel region. Forming a third contact hole exposing a portion of the third contact hole;
Depositing a second transparent conductive layer as a fourth conductive layer on the second passivation layer on which the third contact hole is formed, and etching the fourth conductive layer using a seventh mask process to form a second layer in the first pixel region. Forming an electrode and forming a second pixel electrode in the second pixel region;
The first electrode may be formed to face the second subpixel electrode to form a first electric field, and the second electrode may be formed to face the first subpixel electrode to form a second electric field. Method of manufacturing a touch sensor integrated display device.
The method of claim 8,
The first subpixel electrode includes an R-subpixel electrode and a G-subpixel electrode, the second subpixel electrode includes a B-subpixel electrode,
Each of the plurality of first electrodes overlaps the R-subpixel electrode and the G-subpixel electrode, and each of the plurality of second electrodes overlaps the G-subpixel electrode. Method of manufacturing integrated display device.
The method of claim 8,
The first and second electrodes and the first and second pixel electrodes may be formed of a transparent conductive material selected from indium tin oxide (ITO), indium zinc oxide (IZO), and gallium-doped zinc oxide (GZO). Method of manufacturing a touch sensor integrated display device characterized in that.

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