KR102204300B1 - Touch sensor integrated display device - Google Patents

Abstract

The touch sensor integrated display device according to an embodiment of the present invention includes a gate line and a data line in which a plurality of pixel regions are formed by crossing each other on a substrate, a thin film transistor and a pixel electrode respectively formed in the plurality of pixel regions, and insulation. A common electrode formed to overlap the pixel electrode with a layer interposed therebetween, a common electrode including a touch driving electrode, and an auxiliary driving line disposed between the substrate and the thin film transistor, overlapping the gate line, and extending along the gate line And the auxiliary driving line is connected to the touch driving electrode through a first contact hole and a first via hole.

Description

Touch sensor integrated display device {TOUCH SENSOR INTEGRATED DISPLAY DEVICE}

The present invention relates to a display device, and more particularly, to a touch sensor integrated display device capable of improving the aperture ratio.

Touch sensors include Liquid Crystal Display, Field Emission Display (FED), Plasma Display Panel (PDP), Electroluminescence Device (EL), and electrophoretic display. It is a type of input device that is installed in an image display device such as, for example, a user presses (presses or touches) a touch panel while viewing the image display device to input predetermined information.

Touch sensors used in the above-described display device may be classified into an add-on type, an on-cell type, and an integrated type according to their structure. The top plate attachment type is a method of attaching the touch sensor to the top plate of the display device after separately manufacturing the display device and the touch sensor. The integrated upper plate is a method of directly forming elements constituting a touch sensor on the surface of an upper glass substrate of a display device. In the built-in type, a touch sensor is built into the display device to achieve a thinner display device and increase durability.

However, the upper plate-attached touch sensor has a structure in which the completed touch sensor is mounted on the display device, and has a thick thickness, and the brightness of the display device becomes dark, thereby reducing visibility. In addition, the upper plate integrated touch sensor has a structure in which a separate touch sensor is formed on the surface of the glass substrate of the display device, and because it shares the glass substrate, the thickness can be reduced compared to the upper plate attached type, but the touch drive electrode layer and the touch drive electrode layer constituting the touch sensor Due to the touch sensing electrode layer and the insulating layer to insulate them, the total thickness increases and the number of processes increases, thereby increasing the manufacturing cost.

The built-in touch sensor has the advantage of solving the problems caused by the upper plate attachment type and the upper plate integral type touch sensor in that durability improvement and thickness reduction are possible. These built-in touch sensors include an optical method and a capacitive type. However, since the built-in touch sensor is formed on the thin film transistor array substrate, the design is complicated and the aperture ratio is lowered.

1 is a plan view illustrating a conventional integrated touch sensor display device, and FIG. 2 is a plan view illustrating sub-pixels in area A of FIG. 1.

Referring to FIG. 1, an integrated touch sensor display device 10 according to the prior art includes a plurality of sub-pixels 20 including a pixel electrode (Pixel) and a common electrode (Vcom) on a substrate 15. . The common electrode of the plurality of sub-pixels 20 is blocked and divided into a touch driver B1 to B4 and a touch sensing unit C1. A driving signal is applied to the touch driver B1 to B4 from the Tx signal line Tx, and the touch sensing unit C1 performs touch sensing from the Rx signal line Rx. Here, the touch sensing unit C1 is disposed in the vertical direction and can be connected to the Rx signal line Rx, but the touch driving units B1 to B4 are connected to the Tx connection wiring 40 that crosses the lower portion of the touch sensing unit C1. Connected by At this time, the Tx connection wirings 40 are connected to the touch drivers B1 to B4 by contact holes 50, respectively.

Referring to FIG. 2, sub-pixels located in region A of FIG. 1 are divided into sub-pixel regions by the intersection of the gate line GL and the data line DL. In each sub-pixel region, a gate electrode G branched from the gate line GL, a source electrode SE branched from the data line DL, a drain electrode DE spaced apart from the source electrode SE, and between them. Thin film transistors TFT composed of the semiconductor layer ACT disposed on each are disposed. In addition, in each sub-pixel region, a pixel electrode Pixel connected to the drain electrode DE of the thin film transistor TFT is disposed, and a common electrode facing the pixel electrode is disposed, although not shown. Meanwhile, the Tx connection wiring 40 connecting the touch drivers is disposed to cross each sub-pixel area, and is connected to a common electrode (not shown) through a contact hole 50 located at one side.

However, the Tx connection wiring 40 provided in the conventional built-in touch sensor integrated display device is formed of the same metal as the gate electrode and is formed at the same time as the gate electrode. Therefore, the Tx connection wiring 40 is made of an opaque metal, and there is a problem of reducing the opening of each sub-pixel area.

The present invention provides a touch sensor-integrated display device capable of improving an aperture ratio.

In order to achieve the above object, a touch sensor integrated display device according to an embodiment of the present invention is formed on a substrate, a gate line and a data line in which a plurality of pixel regions are formed by crossing each other, and each formed in the plurality of pixel regions. The thin film transistor and the pixel electrode, which are formed to overlap with the pixel electrode with an insulating layer therebetween, are positioned between the common electrode including a touch driving electrode, and the substrate and the thin film transistor, overlap the gate line, and the gate And an auxiliary driving line extending along a line, wherein the auxiliary driving line is connected to the touch driving electrode through a first contact hole and a first via hole.

In addition, a touch sensor integrated display device according to an embodiment of the present invention includes an auxiliary driving line located on a substrate, a buffer layer located on the front surface of the substrate on which the auxiliary driving line is formed, an active layer located on the buffer layer, and the A gate insulating film positioned on the front surface of the substrate on which the active layer is formed, a gate line positioned on the gate insulating film, an interlayer insulating film positioned on the front surface of the substrate on which the gate line is formed, and formed on the gate insulating film to cross the gate line A thin film transistor disposed on the data line, the interlayer insulating film, and having a source electrode connected to the data line, positioned on the interlayer insulating film to be spaced apart from the thin film transistor, and in the buffer layer, the gate insulating film, and the interlayer insulating film A source metal pattern connected to the auxiliary driving line through a formed first contact hole, a passivation layer positioned on the entire substrate on which the thin film transistor and the source metal pattern are formed, a first via hole positioned on the passivation layer and formed on the passivation layer An auxiliary driving pattern connected to the source metal pattern through, a common electrode located on the protective film and connected to the auxiliary driving pattern, a passivation film located on the entire surface of the substrate on which the common electrode is formed, and located on the passivation film And a pixel electrode connected to the drain electrode through a second via hole formed in the passivation layer, wherein the auxiliary driving line overlaps the gate line and extends along the gate line.

The auxiliary driving line is characterized in that it is a light-shielding film overlapping the active layer of the thin film transistor.

The gate line may include a gate electrode branched from the gate line, and the first contact hole and the first via hole are surrounded by the gate electrode, the gate line, and the data line.

The active layer, the data line, and the auxiliary driving line may overlap each other.

The touch sensor integrated display device according to an embodiment of the present invention has an advantage of improving the aperture ratio of the display device by using a light shielding film as an auxiliary driving line to connect the touch driving electrodes. In particular, since the auxiliary driving line is disposed to overlap most of the gate line, and holes connecting the auxiliary driving line and the touch driving electrode are also located in the thin film transistor, there is an advantage of improving the aperture ratio of the display device.

1 is a plan view showing a conventional built-in touch sensor integrated display device.
FIG. 2 is a plan view illustrating sub-pixels in area A of FIG. 1.
3 is a schematic diagram showing a touch sensor integrated display device according to an embodiment of the present invention.
FIG. 4 is a diagram conceptually showing a relationship between a pixel area, a driving area for touch recognition, and a sensing area of the display device with integrated touch sensor shown in FIG. 3;
FIG. 5 is a plan view of a touch sensor integrated display device showing an enlarged view of sub-pixels of portions A to B shown in FIG. 3;
6 is a cross-sectional view taken along line II′ of FIG. 5.
7 is a cross-sectional view taken along the line II-II' shown in FIG. 5;
8 is a cross-sectional view taken along line III-III' shown in FIG. 5;

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The same reference numerals throughout the specification mean substantially the same elements.

Hereinafter, a touch sensor integrated display device according to an embodiment of the present invention will be described in more detail. FIG. 3 is a schematic diagram illustrating a display device integrated with a touch sensor according to an exemplary embodiment of the present invention, and FIG. 4 is a relationship between a pixel area and a driving area for touch recognition and a sensing area of the display device integrated with the touch sensor shown in FIG. Is a diagram conceptually showing.

In the following description, a liquid crystal display device will be described in detail as an example of a touch sensor integrated display device.

3 and 4, a touch sensor-integrated liquid crystal display device (hereinafter, referred to as a display device) according to an embodiment of the present invention is provided at the intersection of a plurality of gate lines 110 and a plurality of data lines 120. A display unit (DP) consisting of a plurality of pixel areas (PA1 to PA36) for displaying information such as characters, images, and moving pictures, and various controllers for controlling the display unit and for touch recognition are provided outside the display unit. It includes a non-display unit (not shown).

A host controller 200, a power supply unit 202, a timing controller 204, a gate driver 210, a data driver 220, a touch driving driver 230, and a touch sensing driver 240 are formed in the non-display unit. In the present invention, it has been described that the host controller 200 and the power supply unit 202 are integrally configured with the display device, but they may be configured independently of the display device. In addition, the common electrodes 130a1 and 130a2 function as touch driving electrodes, and will be described below by referring to touch driving electrodes instead of the term common electrodes.

The thin film transistor array TFTA includes a plurality of pixel regions PA1 to PA36 defined by intersections of the gate lines 110 and the data lines 120, and a plurality of pixel regions PA1 to PA36 Each of y includes a plurality of sub-pixel areas SP1, SP2, and SP3 (see FIG. 4). The thin film transistor array TFTA includes a plurality of touch driving electrodes 130a1 and 130a2. The plurality of touch driving electrodes 130a1 and 130a2 are not separated in the first direction (in this embodiment, the x-axis direction, hereinafter the same), but are integrally formed continuously, and the second direction (in this embodiment, the y-axis direction, hereinafter the same) In the same), they are separated at least once and spaced apart from each other and arranged side by side.

In addition, in the color filter array CFA, the touch sensing electrodes 130b are disposed in the second direction, and are formed across the touch driving electrodes 130a1 and 130a2. Herein, it has been described that the touch sensing electrode 130b is one, but the touch sensing electrodes 130b are integrally and continuously formed in the second direction, separated from each other in the first direction, and formed side by side.

In an embodiment of the present invention, for simplicity of explanation, the configuration of two touch driving electrodes 130a1 and 130a2 and one touch sensing electrode 130b formed corresponding to 6 × 6 = 36 pixel areas PA1 to PA36 It will be described with an example. In addition, each of the touch driving electrodes 130a and 130a2 is formed to have a size corresponding to 18 (3 × 6) pixel areas, and the touch sensing electrode 130b corresponds to 12 (2 × 6) pixel areas. It will be described as being formed in a size that is. Accordingly, the touch driving electrode 130a1 is formed to have a size corresponding to the 18 pixel areas PA1 to PA18 adjacent to each other vertically, left and right, and the touch driving electrode 130a2 has 18 pixel areas PA19 to adjacent to each other vertically, left and right. PA36). In addition, the touch sensing electrode 130b is formed to have a size corresponding to 12 pixel areas (PA3, PA4, PA8, PA9, PA13, PA14, PA18, PA19, PA27, PA28, PA33, PA34) adjacent to each other in the vertical, left and right. .

The size and number of the touch driving electrodes described in the embodiments of the present invention are merely illustrative for convenience of description, and the present invention is not limited thereto. In the present invention, a touch driving electrode is formed to have a size corresponding to a pixel area formed by grouping a plurality of pixel areas arranged in a first and second direction into at least two or more, and in one of the first and second directions. And forming a touch sensing electrode with a size corresponding to the pixel area formed by grouping the pixel areas arranged only as one.

Therefore, the size and number of each of the touch drive electrodes are appropriately changed in consideration of the area touched by a finger, etc., and the size of the display device (MP3, PDA, PMP, smartphone, notebook computer, netbook, large display device, etc.). I can. For example, if the size of a 1-pixel area applied to the current display device is 100 X 100 µm, considering the case where a finger touch is performed, the size of the touch driving electrodes 130a1 and 130a2 is 50 X 50 pixels (approximately 5 X 5 mm) is also possible. The touch sensing electrode 130b is arranged to correspond to the touch driving electrodes 130a1 and 130a2 in the second direction, so that the touch sensing electrode 130b crosses the touch driving electrodes 130a1 and 130a2 when viewed from above. .

As described above, the sizes of the touch driving electrodes 130a1 and 130a2 and the touch sensing electrode 130b can be appropriately adjusted in consideration of the size of the pixel area and the touch area of a finger on which the touch is performed, so several to several hundred pixels It may be formed in a size corresponding to the area. The number of the touch driving electrodes 130a1 and 130a2 and the touch sensing electrodes 130b may also be appropriately adjusted according to the size of the applied display device.

The touch driving electrodes 130a1 and 130a2 according to an embodiment of the present invention drive liquid crystal by forming an electric field together with the pixel electrode P together with a function of recognizing the touch position when a touch occurs on the display device. It functions as a common electrode. Therefore, the touch driving electrodes 130a1 and 130a2 should be understood to have the same meaning as the common electrode. In FIG. 4, for reference, an area in which a plurality of touch driving electrodes 130a1 and 130a2 and a touch sensing electrode 130b are formed is divided into first and second touch driving areas DA1 and DA2 and a touch sensing area SA. Shown.

Meanwhile, since the touch driving electrodes 130a1 and 130a2 according to an embodiment of the present invention function as electrodes for driving liquid crystals and transmit light from the backlight, they must be formed of a transparent material. However, since the touch driving electrodes 130a1 and 130a2 are formed of an oxide-based transparent conductive material such as ITO or IZO, resistance is increased compared to the case of being formed of a metal-based conductive material. This may decrease the touch performance by increasing the loss of the touch signal and the time constant of the capacitance. Therefore, it is necessary to reduce the resistance generated by the material used for the touch driving electrodes 130a1 and 130a2.

In the present invention, for reducing the resistance of the touch driving electrodes 130a1 and 130a2 and for a touch function, the touch driving electrodes 130a1 and 130a2 are connected in row units using common lines 113a1, 113a2, 113b1 and 113b2 which are signal lines. . On the other hand, the touch sensing electrode 130b is formed only as a transparent electrode such as ITO for mask reduction. Although not shown in the drawing, the touch sensing electrodes 130b are formed to be spaced apart from each other in the first direction, but are continuously formed in the second direction. Such a structure will be described later.

3 and 4, the touch driving electrode 130a1 formed in the first touch driving area DA1 arranged in the first row in the first direction includes two common lines 113a1 and 113a2 and two The touch driving electrode 130a2 formed in the second touch driving area DA2, which is electrically connected by the auxiliary driving lines 114a1 and 114a2 and is arranged in the second row, includes two common lines 113b1 and 113b2. And the two auxiliary driving lines 114b1 and 114b2 are electrically connected. The common lines 113a1, 113a2, 113b1, 113b2 and the auxiliary driving lines 114a1, 114a2, 114b1, 114b2 connected to the touch driving electrodes 130a1 and 130a2 are parallel to the touch driving electrodes 130a1 and 130a2. Are arranged and overlap each other. The touch sensing electrode 130b formed in the touch sensing area SA arranged in the second direction is electrically connected by the touch sensing line 123a through the auxiliary sensing line 123b.

Hereinafter, the relationship between the common lines 113a1, 113a2, 113b1, 113b2, the auxiliary driving lines 114a1, 114a2, 114b1, 114b2, the touch driving electrodes 130a1 and 130a2, and the touch sensing electrode 130b is illustrated in FIGS. It will be described in more detail with reference to FIG. 8. FIG. 5 is a plan view of a touch sensor integrated display device showing an enlarged view of subpixels in portions A to B shown in FIG. 3, and FIG. 6 is a cross-sectional view taken along line II′ of FIG. 5, and FIG. 7 Is a cross-sectional view taken along line II-II' shown in FIG. 5, and FIG. 8 is a cross-sectional view taken along line III-III' shown in FIG. 5.

The common lines 113a1, 113a2, 113b1, and 113b2 are formed on the touch driving electrode 130a1 while crossing the pixel areas PA1, PA7, PA19, and PA25 in the first direction as shown in FIGS. 3 and 5. . The auxiliary driving lines 114a1, 114a2, 114b1, 114b2 cross the pixel areas (PA2, PA3, PA4, PA5, PA8, PA9, PA10, PA11, PA20, PA21, PA22, PA23, PA26, PA27, PA28, PA29). It is formed on the substrate and is connected to the touch driving electrodes 130a1, 130a2, 130a3, 130a4 through contact holes CH2a, CH2b, CH2c, CH2d, CH2e, CH2f, and CH2g.

Specifically, the auxiliary driving line 114a1 is the touch driving electrode 130a1 through the first contact hole CH2a formed in the sub-pixel area SP3 of the pixel area PA2 in the first touch driving area DA1. The touch driving electrodes 130a1 and 130a2 are electrically connected to each other through the first contact hole CH2b formed in the subpixel area SP1 of the pixel area PA5. In addition, the auxiliary driving line 114b1 is connected to the touch driving electrode 130a3 through the first contact hole CH2e formed in the sub-pixel area SP3 of the pixel area PA20 in the second touch driving area DA2. The touch driving electrodes 130a3 and 130a4 are connected and electrically connected to each other through the first contact hole CH2f formed in the sub-pixel area SP1 of the pixel area PA23. The auxiliary driving lines 114a1, 114a2, 114b1, and 114b2 are connected to the touch driving line 113a through the touch driving electrodes 130a1, 130a2, 130a3, 130a4 and the touch driving lines 113a1, 113a2, 113b1, and 113b2. As a result, the pulse voltage Vtsp is supplied from the touch driving driver 230.

The touch sensing electrode 130b crosses the pixel areas PA3, PA9, PA15, PA21, PA27, PA33; PA4, PA10, PA16, PA22, PA28, PA34 in the second direction as shown in FIGS. 3 and 4. Is extended. The auxiliary sensing line 123b crosses the pixel area PA3 and is formed on the touch sensing electrode 130b. In the present embodiment, only one touch sensing electrode 130b is shown, but when there is another touch sensing electrode under the touch sensing electrode 130b, the auxiliary sensing line 123b is formed in the pixel area PA33. The touch sensing electrode is connected.

In more detail, the subpixels of the pixel areas PA2 and PA3 in the first touch driving area DA1 will be described with reference to FIGS. 5 to 8.

Referring to FIG. 5, a plurality of pixel electrodes in a region defined by a gate line 110 arranged in a first direction on a substrate (not shown) and a data line 120 arranged crossing the gate line 110 Fields P11 and P12 are formed. The gate electrode 150 extending from the gate line 110, the first source electrode 160a consisting of the data line 120 itself, the first drain electrode 160b connected to the pixel electrode P11, and between them The first active layer 165 located at constitutes a first thin film transistor TFT1. In addition, the gate electrode 152 extending from the gate electrode 150 of the first thin film transistor (TFT), the second source electrode 162a formed of the data line 120 itself, and the second source electrode 162a connected to the pixel electrode P11. The second drain electrode 162b and the second active layer 167 interposed therebetween constitute a second thin film transistor TFT2. The first thin film transistor TFT1 is connected to the upper pixel electrode P11, and the second thin film transistor TFT2 is connected to the lower pixel electrode P12. Further, although not shown, a common electrode (not shown) is disposed under the pixel electrode P12 to form an electric field with the pixel electrodes P11 and P12.

On the other hand, the auxiliary driving line 114a1 of the present invention is parallel to the gate line 110 and is arranged to cross the data line 120. The auxiliary driving line 114a1 is a light shielding film for blocking light from reaching the active layers 165 and 167 of the first thin film transistor TFT1 and the second thin film transistor TFT2, and the active layers 165 and 167 It is located in the lower part of ). The auxiliary driving line 114a1 is connected to the upper touch driving electrode (=common electrode) through a contact hole CH2a provided between the gate electrodes 150 and 152 and the gate line 110. Accordingly, the auxiliary driving line 114a1 extends while overlapping the gate line 110 and is disposed to overlap the active layers 165 and 167. In particular, the contact hole CH2a and the first via hole 187 are positioned to be surrounded by the gate electrode 152, the gate line 110, and the data line 120. That is, the hole portion where the auxiliary driving line 114a1 is connected to the touch driving electrode is positioned so as not to lower the aperture ratio. In addition, the auxiliary driving line 114a1 of the present invention is disposed to overlap the area where the thin film transistors TFT1 and TFT2 are disposed and the area where the gate line 110 and the data line 120 are disposed, so that the aperture ratio of the display device is Does not affect Therefore, compared to the conventional touch sensor integrated display device, there is an advantage of improving the aperture ratio.

In more detail, referring to FIG. 6 taken along line II′ of FIG. 5, the auxiliary driving line 114a1 is positioned on the substrate SUB. The auxiliary drive line 114a1 serves as a light-shielding film to block light and a wiring, and a metal having excellent conductivity and high reflectivity, such as aluminum (Al), silver (Ag), copper (Cu), etc., is used. I can. A buffer layer 170 is positioned on the auxiliary driving line 114a1. The buffer layer 170 may be formed of a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a double layer thereof.

The first active layer 165 is positioned on the buffer layer 170 to overlap the auxiliary driving line 114a1. The first active layer 165 may use amorphous silicon, or polycrystalline silicon obtained by crystallizing amorphous silicon. In contrast, the first active layer 165 may be formed of any one of zinc oxide (ZnO), indium zinc oxide (InZnO), indium gallium zinc oxide (InGaZnO), or zinc tin oxide (ZnSnO). In addition, the first active layer 165 may be formed of a low-molecular or high-molecular organic material such as melocyanine, phthalocyanine, pentacene, or thiophene polymer. A gate insulating layer 172 is positioned on the first active layer 165. The gate insulating layer 172 may be formed of a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a double layer thereof.

A gate electrode 150 is positioned on the gate insulating layer 172. The gate electrode 150 is positioned to overlap with the above-described first active layer 165. The gate electrode 150 is any one selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and copper (Cu), or It may be an alloy, and may be made of a single layer or multiple layers. An interlayer insulating layer 174 is positioned on the gate electrode 150. The interlayer insulating film 174 may be formed of a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a double layer thereof.

A first source electrode 160a and a first drain electrode 160b are positioned on the interlayer insulating layer 174. The first source electrode 160a is connected to one side of the first active layer 165 through a contact hole 164a, and the first drain electrode 160b is a contact hole 164b on the other side of the first active layer 165 ). Accordingly, a first thin film transistor TFT1 including a first active layer 165, a gate electrode 150, a first source electrode 160a, and a first drain electrode 160b is formed on the substrate SUB. . A first passivation layer 176 is positioned on the first source electrode 160a and the first drain electrode 160b. The first passivation layer 176 insulates and protects the underlying device, and may be formed of a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a double layer thereof.

A passivation layer 178 is positioned on the first passivation layer 176. The protective layer 178 is to alleviate the step difference in the lower structure, and may be made of an organic material such as polyimide, polyacryl, photoacryl, polyamide, or benzocyclobutane (BCB). . The touch driving electrode 130a1 is positioned on the first passivation layer 176. From the perspective of the sub-pixel, the touch driving electrode 130a1 acts as a common electrode Vcom. The touch driving electrode 130a1 can transmit light such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), ITZO (Indium Tin Zinc Oxide), ZnO (Zinc Oxide), IGZO (Indium Gallium Zinc Oxide). It can be made of a transparent conductive material. The touch driving electrode 130a1 is provided with a pattern hole 164d so that the pixel electrode is connected to the first thin film transistor TFT1 later.

A second passivation layer 180 is positioned on the touch driving electrode 130a1. The second passivation layer 180 insulates the touch driving electrode 130a1 from the pixel electrode, and is made of the same material as the first passivation layer 176 described above. The pixel electrode P11 is positioned on the second passivation layer 180. The pixel electrode P11 is connected to the drain electrode 160b of the first thin film transistor TFT1 through the via holes 164c formed in the first passivation layer 176, the passivation layer 178, and the second passivation layer 180. . Accordingly, the touch sensor integrated display device of the present invention is constructed.

Meanwhile, referring to FIG. 7, when a structure in which the auxiliary driving line 114a1 is connected to the touch driving electrode 130a1 is described, the auxiliary driving line 114a1 is positioned on the substrate SUB. The buffer layer 170 is positioned on the auxiliary driving line 114a1 and the gate insulating layer 172 is positioned on the buffer layer 170. A gate line 110 and a second gate electrode 152 are positioned on the gate insulating layer 172, and an interlayer insulating layer 174 is positioned on them. A source metal pattern 168 is positioned on the interlayer insulating layer 174. The source metal pattern 168 is connected to the auxiliary driving line 114a1 through a contact hole CH2a penetrating the buffer layer 170, the gate insulating layer 172, and the interlayer insulating layer 174. The source metal pattern 168 serves as a medium for connecting an auxiliary driving pattern to be described later to the auxiliary driving line 114a1.

A first passivation layer 176 is positioned on the source metal pattern 168, and a passivation layer 178 is positioned on the first passivation layer 176. The touch driving electrode 130a1 is positioned on the passivation layer 178, and the auxiliary driving pattern 185 connected to the touch driving electrode 130a1 is connected to the source metal pattern 168 through the via hole 187. Accordingly, the touch driving electrode 130a1 is connected to the auxiliary driving line 114a1 through the auxiliary driving pattern 185 and the source metal pattern 168. A second passivation layer 180 is positioned on the touch driving electrode 130a1 and the auxiliary driving pattern 185.

Meanwhile, referring to FIG. 8, looking at a structure in which the auxiliary sensing line is connected to the touch sensing electrode, the auxiliary driving line 114a1 is located on the substrate SUB, and the buffer layer 170 is located on the auxiliary driving line 114a1. do. A first active layer 165 is positioned on the buffer layer 170 to overlap the auxiliary driving line 114a1, and a gate insulating layer 172 is positioned on the first active layer 165. The gate electrode 150 is positioned on the gate insulating layer 172 and the interlayer insulating layer 174 is positioned on the gate electrode 150. The first source electrode 160a and the first drain electrode 160b are positioned on the interlayer insulating layer 174, and the first passivation layer 176 is positioned on the first source electrode 160a and the first drain electrode 160b. Located. The passivation layer 178 is positioned on the first passivation layer 176, and the touch sensing electrode 130b is positioned on the first passivation layer 176. From the perspective of the sub-pixel, the touch sensing electrode 130b acts as a common electrode Vcom. The touch sensing electrode 130b may be made of a transparent conductive material through which light can pass, such as ITO, IZO, ITZO, ZnO, and IGZO. The touch sensing electrode 130b is provided with a pattern hole 164d so that the pixel electrode is connected to the first thin film transistor TFT1 later.

An auxiliary sensing line 123b is positioned on the touch sensing electrode 130b. The auxiliary sensing line 123b connects the divided touch sensing electrodes 130b to each other in a second direction (vertical direction) and serves to lower resistance. Accordingly, the auxiliary sensing line 123b is positioned on the touch sensing electrode 130b and is disposed to overlap the touch sensing electrode 130b. A second passivation layer 180 is positioned on the touch sensing electrode 130b and the auxiliary sensing line 123b.

As described above, the touch sensor integrated display device according to an embodiment of the present invention has an advantage of improving the aperture ratio of the display device by using the light shielding film as an auxiliary driving line to connect the touch driving electrodes. In particular, since the auxiliary driving line is disposed to overlap most of the gate line, and holes connecting the auxiliary driving line and the touch driving electrode are also located in the thin film transistor, there is an advantage of improving the aperture ratio of the display device.

Hereinafter, a method of driving the touch sensor integrated display device according to an embodiment of the present invention described above will be described with reference to FIG. 3.

Referring to FIG. 3, the gate driver 210 sequentially outputs a gate pulse (or scan pulse) in a display mode under the control of the timing controller 204 and converts the swing voltage of the output to a gate high voltage (VGH) and a gate low. It is shifted by voltage (VGL). The gate pulse output from the gate driver 210 is sequentially supplied to the gate lines 110 in synchronization with the data voltage output from the data driver 220. The gate high voltage VGH is a voltage greater than or equal to the threshold voltage of the thin film transistor T, and the gate low voltage VGH is a voltage lower than the threshold voltage of the thin film transistor T. The gate drive ICs of the gate driver 210 are connected to the gate lines 110 formed on the substrate of a thin film transistor array (TFTA) through a Tape Automated Bonding (TAP) process, or together with a pixel through a GIP (Gate In Panel) process. It may be formed directly on the substrate of the thin film transistor array (TFTA).

The data driver 220 samples and latches digital video data (RGB) under the control of the timing controller 204. The data driver 220 converts the digital video data RGB to positive/negative gamma compensation voltages GMA1 to GMAn to invert the polarity of the data voltage. The positive/negative data voltage output from the data driver 220 is synchronized with the gate pulse output from the gate driver 210. Each of the source drive integrated circuits (ICs) of the data driver 220 may be connected to the data lines 120 of the display unit through a chip on glass (COG) process or a tape automated bonding (TAB) process. The source drive IC may be integrated in the timing controller 204 and implemented as a one-chip IC together with the timing controller 204.

The timing controller 204 is supplied from an external host controller 200 and generates timing control signals for controlling the operation timing of the gate driver 210 and the data driver 220 by using timing signals required for driving the display device. Occurs. The timing control signals for controlling the operation timing of the gate driver 210 and the data driver 220 include a gate timing control signal for controlling the operation timing of the gate driver 210 and the operation timing and data of the data driver 220. It includes a data timing control signal for controlling the polarity of the voltage.

The gate timing control signal includes a gate start pulse (GSP), a gate shift clock (GSC), a gate output enable signal (Gate Output Enable, GOE), and the like. The gate start pulse GSP is applied from the gate driver 210 to the first gate drive IC that first outputs the gate pulse every frame period to control the shift start timing of the gate drive IC. The gate shift clock GSC is a clock signal that is commonly input to the gate drive ICs of the gate driver 210 and shifts the gate start pulse GSP. The gate output enable signal GOE controls the output timing of the gate drive ICs of the gate driver 210.

Data timing control signals include Source Start Pulse (SSP), Source Sampling Clock (SSC), Polarity Control Signal (Polarity: POL), and Source Output Enable (SOE) signals. Includes. The source start pulse SSP is applied to the first source drive IC that samples data first from the data driver 220 to control the data sampling start timing. The source sampling clock (SSC) is a clock signal that controls the sampling timing of data in the source drive ICs based on a rising or falling edge. The polarity control signal POL controls the polarity of the data voltage output from the source drive ICs. The source output enable signal SOE controls the output timing of the source drive ICs. If digital video data (RGB) is input to the data driver 220 through a mini LVDS (Low Voltage Differential Signaling) interface, the source start pulse SSP and the source sampling clock SSC may be omitted.

The power supply unit 202 is a DC-DC converter including a PWM (Pulse Width Modulation) modulation circuit, a boost converter, a regulator, a charge pump, a voltage divider circuit, an operation amplifier, etc. DC-DC Convertor). The power supply unit 202 adjusts the input voltage from the host controller 200 to drive the display unit DP, the gate driver 210, the data driver 220, the timing controller 204, and the backlight unit (not shown). Generate power Power output from the power supply unit 202 includes high potential power voltage (VDD), gate high voltage (VGH), gate low voltage (VGL), common voltage (Vcom), positive/negative gamma reference voltages VGMA1 to VGMAn. ), pulse voltage (Vtsp), and the like. Here, the common voltage Vcom is supplied to the touch driving electrodes 130a1 and 130a2 serving as common electrodes to form a fringe field electric field between the pixel electrodes. In addition, the pulse voltage Vtsp is supplied to the touch driving electrodes 130a1 and 130a2 during a period in which the common voltage Vcom is not supplied to function as a touch driving electrode for touch recognition. The supply timing of the common voltage Vocm and the pulse voltage Vtsp may be controlled by the host controller 200 or controlled by the timing controller 204.

The host controller 200 provides digital video data (RGB) of an input image and timing signals (Vsync, Hsync, DE, MCLK) required for driving the display through interfaces such as LVDS interface and TMDS (Transition Minimized Differential Signaling) interface. It is transmitted to the timing controller 204.

The touch driving driver 230 applies the pulse voltage Vtsp generated from the power supply unit 202 to the touch driving electrodes 130a1, through the touch driving lines 113a and 113b and the common lines 113a1, 113a2, 113b1, and 113b2. 130a2, 130a3, 130a4). The pulse voltages Vtsp supplied to the touch driving electrodes 130a1, 130a2, 130a3, and 130a4 are sequentially supplied in row units. That is, the pulse voltage Vtsp is the touch driving line 113a, the common lines 113a1 and 113a2, and the auxiliary driving lines 114a1 and 114a2 connected through the first contact holes CH2a, CH2b, CH2c, and CH2d. Is supplied to the touch driving electrodes 130a1 and 130a2 arranged in the first row, followed by the touch driving line 113b, the common lines 113b1 and 113b2, and the first contact holes CH2e, CH2f, CH2g, CH2h) is supplied to the auxiliary driving lines 114b1 and 114b2 and supplied to the touch driving electrodes 130a3 and 130a4 disposed in the second row.

The touch driving driver 230 does not apply a pulse voltage to the touch driving electrodes disposed in a row other than the touch driving electrodes of the row to which the current pulse voltage Vtsp is applied. For example, if a pulse voltage is applied to the touch driving electrode 130a1 disposed in the first row, the pulse voltage is not applied to the touch driving electrode 130a3 disposed in the second row, and in the floating state, the touch driving driver ( A current path between 230 and the touch driving electrode 130a3 is opened. On the other hand, if a pulse voltage is applied to the touch driving electrodes 130a3 arranged in the second row, the pulse voltage is not applied to the touch driving electrodes 130a1 arranged in the first row, and in a state where the pulse voltage is not applied, The current path between the touch driving driver 230 and the touch driving electrode 130a1 is opened.

The touch sensing driver 240 is directly connected to the touch sensing electrode 130b, and when there is a touch, the change in capacitance occurring between the touch driving electrodes 130a1, 130a2, 130a3, 130a4 and the touch sensing electrode 130b is It detects and determines the x-coordinate and y-coordinate of the touched position.

It will be appreciated by those skilled in the art through the above description that various changes and modifications can be made without departing from the technical idea of the present invention. For example, it is possible to change the x-axis direction or y-axis direction described in the embodiment of the present invention in opposite directions, and the size, number, and shape of the touch driving electrode and the touch sensing electrode constituting the common electrode. , The position of the touch driving line or the touch sensing line connected to each of the touch electrodes can be arbitrarily changed, and is not limited to those described in the embodiments of the present invention. Accordingly, the technical scope of the present invention should not be limited to the content described in the detailed description of the invention, but should be determined by the claims.

110: gate line 114a1: auxiliary driving line
130a1: touch driving electrode 152: second gate electrode
170: buffer layer 172: gate insulating film
174: interlayer insulating film 176: first passivation film
178: protective film 180: second passivation film
185: auxiliary driving pattern 187: first via hole

Claims (6)

A gate line and a data line crossing each other on the substrate to form a plurality of pixel regions;
A thin film transistor and a pixel electrode respectively formed in the plurality of pixel regions;
A common electrode formed to overlap the pixel electrode with an insulating layer therebetween and including a touch driving electrode; And
An auxiliary driving line positioned between the substrate and the thin film transistor, overlapping the gate line, and extending along the gate line; and
The auxiliary driving line is connected to the touch driving electrode through a first contact hole and a first via hole, and includes a light blocking film overlapping the active layer of the thin film transistor.
An auxiliary driving line positioned on the substrate;
A buffer layer positioned on the front surface of the substrate on which the auxiliary driving line is formed;
An active layer on the buffer layer;
A gate insulating layer on the entire surface of the substrate on which the active layer is formed;
A gate line on the gate insulating layer;
An interlayer insulating layer on the front surface of the substrate on which the gate line is formed;
A data line formed on the gate insulating layer to cross the gate line;
A thin film transistor disposed on the interlayer insulating layer and including a source electrode and a drain electrode connected to the data line;
A source metal pattern positioned on the interlayer insulating layer to be spaced apart from the thin film transistor, and connected to the auxiliary driving line through a first contact hole formed in the buffer layer, the gate insulating layer, and the interlayer insulating layer;
A protective film positioned on the entire surface of the substrate on which the thin film transistor and the source metal pattern are formed;
A common electrode positioned on the passivation layer and including a touch driving electrode;
A passivation film positioned on the entire surface of the substrate on which the common electrode is formed;
An auxiliary driving pattern positioned on the passivation layer and connected to the source metal pattern through a first via hole formed in the passivation layer; And
A pixel electrode positioned on the passivation layer and connected to the drain electrode through a second via hole formed in the passivation layer,
The auxiliary driving line overlaps the gate line, extends along the gate line, and includes a light blocking film overlapping the active layer.
delete The method according to any one of claims 1 or 2,
The gate line includes a gate electrode branched from the gate line,
The first contact hole and the first via hole are surrounded by the gate electrode, the gate line, and the data line.
The method according to any one of claims 1 or 2,
The touch sensor integrated display device, wherein the active layer, the data line, and the auxiliary driving line overlap. A gate line and a data line crossing each other on the substrate to form a plurality of pixel regions;
A thin film transistor and a pixel electrode respectively formed in the plurality of pixel regions;
A touch driving electrode overlapping the pixel electrode with an insulating layer therebetween; And
An auxiliary driving line extending from the gate line between the substrate and the thin film transistor,
The auxiliary driving line includes an active layer of the thin film transistor and a light blocking layer overlapping the gate line.

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