KR20160002552A - Touch sensor integrated display device - Google Patents

Abstract

According to one embodiment of the present invention, a touch sensor integrated display device includes: a gate line and a data line intersecting each other on a substrate to form a plurality of pixel regions; a thin film transistor and a pixel electrode formed on each of the pixel regions; a common electrode formed to overlap the pixel electrode with an insulating layer therebetween and including a touch driving electrode; and an auxiliary driving line located between the substrate and the thin film transistor, overlapping the gate line, and extending along the gate line. The auxiliary driving line is connected to the touch driving electrode through a first contact hole and a first via hole.

Description

TECHNICAL FIELD [0001] The present invention relates to a TOUCH sensor integrated display device,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a display device, and more particularly, to a touch sensor integrated type display device capable of improving an aperture ratio.

The touch sensor includes a liquid crystal display (LCD), a field emission display (FED), a plasma display panel (PDP), an electroluminescence device (EL) And the like, and is a type of an input device that presses (presses or touches) the touch panel while the user views the image display device and inputs predetermined information.

The touch sensor used in the above-described display device can be divided into an add-on type, an on-cell type, and an integrated type according to its structure. In the top plate attaching type, a touch sensor is attached to an upper plate of a display device after separately manufacturing a display device and a touch sensor. The top plate integral type is a method of directly forming elements constituting the touch sensor on the surface of the upper glass substrate of the display device. The built-in type has a built-in touch sensor inside the display device to achieve a thin display device and enhance durability.

However, the top-plate-attached touch sensor has a problem in that the completed touch sensor is mounted on the display device and thus the thickness thereof is thick, the brightness of the display device becomes dark, and the visibility is deteriorated. In addition, since the top plate integrated type touch sensor has a structure in which a separate touch sensor is formed on the surface of the glass substrate of the display device, the thickness can be reduced as compared with the top plate attachment type because the glass substrate is shared. However, The touch sensing electrode layer and the insulating layer for insulating the same increase the overall thickness and increase the number of processes, thereby increasing the manufacturing cost.

The built-in touch sensor has advantages of improving the durability and reducing the thickness, thereby solving the problems caused by the touch sensor of the top plate type and the top plate type. Such a built-in touch sensor includes an optical system and a capacitive system. However, since the built-in touch sensor is formed on the thin film transistor array substrate, the design is complicated and the aperture ratio is lowered.

FIG. 1 is a plan view of a conventional built-in touch sensor integrated type display device, and FIG. 2 is a plan view showing sub pixels in a region A of FIG.

Referring to FIG. 1, a built-in touch sensor integrated display device 10 according to the related art includes a plurality of subpixels 20 having a pixel electrode and a common electrode Vcom on a substrate 15 . The common electrode of the plurality of subpixels 20 is divided into the touch driving units B1 to B4 and the touch sensing unit C1. A driving signal is applied to the touch driving units B1 to B4 from the Tx signal line Tx and a touch sensing is performed from the Rx signal line Rx to the touch sensing unit C1. Here, the touch sensing unit C1 may be connected to the Rx signal line Rx in the longitudinal direction, but the touch driving units B1 to B4 may be connected to the Tx connection wiring 40 that crosses the lower portion of the touch sensing unit C1 Lt; / RTI > At this time, the Tx connection wirings 40 are connected to the touch driving parts B1 to B4 by the contact holes 50, respectively.

Referring to FIG. 2, the subpixels located in the region A of FIG. 1 are divided into subpixels by the intersection of the gate lines GL and the data lines DL. Each sub pixel region includes a gate electrode G branched from the gate line GL and a drain electrode DE spaced apart from the source electrode SE and the source electrode SE branched from the data line DL, (TFT) composed of a semiconductor layer (ACT) disposed on the substrate. A pixel electrode connected to the drain electrode DE of the thin film transistor TFT is disposed in each sub pixel region, and a common electrode opposed to the pixel electrode is disposed although not shown. On the other hand, the Tx connection wiring 40 connecting the touch driving parts is disposed across each sub pixel area, and is connected to a common electrode (not shown) through a contact hole 50 located on one side.

However, the Tx connection wiring 40 included in the conventional built-in touch sensor integrated type display device is formed of the same metal as the gate electrode and simultaneously with the gate electrode. Therefore, the Tx connection wiring 40 is made of opaque metal, which has a problem of reducing the opening of each sub-pixel region.

The present invention provides a touch sensor integrated type display device capable of improving the aperture ratio.

According to an aspect of the present invention, there is provided a touch sensor integrated type display device including a gate line and a data line crossing each other on a substrate to form a plurality of pixel regions, A common electrode including a touch driving electrode formed to overlap with the pixel electrode with an insulating layer interposed therebetween, and a thin film transistor disposed between the substrate and the thin film transistor, And the auxiliary driving line is connected to the touch driving electrode through the first contact hole and the first via hole.

According to another aspect of the present invention, there is provided a touch sensor integrated type display device including an auxiliary driving line disposed on a substrate, a buffer layer disposed on a front surface of the substrate on which the auxiliary driving line is formed, An active layer formed on a front surface of the substrate; a gate line positioned on the gate insulation film; an interlayer insulation film located on a front surface of the substrate on which the gate line is formed; And a source electrode connected to the data line, the thin film transistor being located on the interlayer insulating film so as to be spaced apart from the thin film transistor, the data line being formed on the buffer layer, the gate insulating film, and the interlayer insulating film And the auxiliary driving line and the auxiliary driving line An auxiliary driving pattern connected to the source metal pattern through a first via hole formed on the passivation film, the auxiliary metal pattern being connected to the source metal pattern, the thin film transistor and the source metal pattern, A passivation film located on the passivation film, the common electrode being connected to the auxiliary driving pattern, a passivation film located on the entire surface of the substrate on which the common electrode is formed, and a second via hole formed on the passivation film, And a pixel electrode connected to the drain electrode, wherein the auxiliary driving line overlaps with the gate line and extends along the gate line.

And the auxiliary driving line is a light-shielding film which overlaps with the active layer of the thin film transistor.

The gate line includes a gate electrode branched from the gate line, and the first contact hole and the first via hole are surrounded by the gate electrode, the gate line, and the data line.

And the active layer, the data line, and the auxiliary driving line are overlapped.

The touch sensor integrated type display device according to an embodiment of the present invention has an advantage that the aperture ratio of the display device can be improved by using the light shielding film as an auxiliary drive line for connecting the touch driving electrodes. Particularly, since the auxiliary driving lines are arranged so as to be mostly overlapped with the gate lines and the holes to which the auxiliary driving lines and the touch driving electrodes are connected are also located in the thin film transistor portion, there is an advantage that the aperture ratio of the display device can be improved.

1 is a plan view of a conventional built-in touch sensor integrated type display device.
FIG. 2 is a plan view showing sub-pixels in region A of FIG. 1. FIG.
3 is a schematic view showing a touch sensor integrated type display device according to an embodiment of the present invention.
FIG. 4 conceptually shows a relationship between a pixel region of the touch-sensor-integrated display device shown in FIG. 3 and a driving region and a sensing region for touch recognition;
FIG. 5 is a plan view of a touch sensor integrated display device in which subpixels A to B shown in FIG. 3 are enlarged. FIG.
6 is a cross-sectional view taken along the line I-I 'shown in FIG. 5;
7 is a cross-sectional view taken along the line II-II 'shown in FIG. 5;
8 is a cross-sectional view taken along the line III-III 'shown in FIG. 5;

Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings. Like reference numerals throughout the specification denote substantially identical components.

Hereinafter, a touch sensor integrated display device according to an embodiment of the present invention will be described in more detail. FIG. 3 is a schematic view showing a touch sensor integrated type display apparatus according to an embodiment of the present invention. FIG. 4 is a diagram showing a relationship between a pixel region of the touch sensor integrated type display apparatus shown in FIG. 3 and a driving region and a sensing region for touch recognition Fig.

In the following description, a liquid crystal display device will be described as an example of the touch sensor integrated type display device.

3 and 4, a touch sensor-integrated liquid crystal display (hereinafter referred to as a display device) according to an embodiment of the present invention includes a plurality of gate lines 110 and a plurality of data lines 120, A display portion DP formed of a plurality of pixel regions PA1 to PA36 for displaying information such as characters, images, and moving images, and various controllers formed outside the display portion for controlling the display portion and for recognizing touches And a non-display portion (not shown).

The host controller 200, the power supply unit 202, the timing controller 204, the gate driver 210, the data driver 220, the touch driver 230, and the touch sensing driver 240 are formed on the non-display unit. In the present invention, the host controller 200 and the power supply unit 202 are described as being integrated with the display device, but they may be configured separately from the display device. The common electrodes 130a1 and 130a2 function as touch driving electrodes. In the following description, the common electrodes 130a1 and 130a2 will be referred to as touch driving electrodes instead of the common electrode.

The thin film transistor array TFTA includes a plurality of pixel areas PA1 to PA36 defined by the intersection of the gate lines 110 and the data lines 120 and includes a plurality of pixel areas PA1 to PA36, Each including a plurality of sub-pixel areas SP1, SP2, and SP3 (see FIG. 4). The thin film transistor array TFTA includes a plurality of touch driving electrodes 130a1 and 130a2. The plurality of touch driving electrodes 130a1 and 130a2 are integrally and continuously formed without being separated in the first direction (the x-axis direction in the present embodiment, hereinafter the same), and are integrally formed in the second direction The same), they are arranged at least once and separated from each other and side by side.

The color filter array CFA is disposed across the touch driving electrodes 130a1 and 130a2, and the touch sensing electrodes 130b are disposed in the second direction. Although the touch sensing electrode 130b is described as being one, the touch sensing electrode 130b is integrally formed continuously in the second direction and spaced apart from each other in the first direction.

In the embodiment of the present invention, in order to simplify the description, the configuration of two touch driving electrodes 130a1 and 130a2 and one touch sensing electrode 130b formed corresponding to 6 × 6 = 36 pixel regions PA1 to PA36 As an example. Each of the touch driving electrodes 130a and 130a2 is formed to correspond to 18 (3 x 6) pixel regions, and the touch sensing electrode 130b corresponds to 12 (2 x 6) pixel regions. As shown in FIG. Accordingly, the touch driving electrode 130a1 is formed to have a size corresponding to the eighteen pixel regions PA1 to PA18 adjacent to each other in the up, down, left, and right directions, and the touch driving electrode 130a2 has eighteen pixel regions PA19- PA36, respectively. The touch sensing electrode 130b is formed to have a size corresponding to 12 pixel regions PA3, PA4, PA8, PA9, PA13, PA14, PA18, PA19, PA27, PA28, PA33, PA34 adjacent to each other in upper, .

The sizes and the numbers of the touch driving electrodes described in the embodiments of the present invention are merely illustrative and are not intended to limit the scope of the present invention. A touch driving electrode is formed in a size corresponding to a pixel region formed by grouping a plurality of pixel regions arranged in first and second directions into at least two or more groups, And forming a touch sensing electrode having a size corresponding to a pixel region formed by grouping the pixel regions arranged only into one pixel region.

Accordingly, the size and number of each of the touch-driven electrodes are appropriately changed in consideration of the area to be touched by a finger or the like and the size of a display device (MP3, PDA, PMP, smart phone, notebook computer, netbook, . For example, when the size of one pixel region applied to the current display device is 100 X 100 m, the size of the touch driving electrodes 130a1 and 130a2 is set to 50 x 50 pixels (approximately 5 X 5 mm). The touch sensing electrode 130b is arranged to correspond to the touch driving electrodes 130a1 and 130a2 in the second direction and the touch sensing electrode 130b is formed to cross the touch driving electrodes 130a1 and 130a2 when viewed from above .

Since the sizes of the touch driving electrodes 130a1 and 130a2 and the touch sensing electrodes 130b can be appropriately adjusted in consideration of the size of the pixel region and the touch area of a finger or the like to be touched, And may be formed in a size corresponding to the region. The number of the touch driving electrodes 130a1 and 130a2 and the number of the touch sensing electrodes 130b may be appropriately adjusted according to the size of the display device.

The touch driving electrodes 130a1 and 130a2 according to an embodiment of the present invention can recognize the touch position when a touch occurs in the display device and form an electric field together with the pixel electrode P to drive the liquid crystal And serves as a common electrode. Therefore, the touch driving electrodes 130a1 and 130a2 have the same meaning as the common electrodes. 4, an area where a plurality of touch driving electrodes 130a1 and 130a2 and a touch sensing electrode 130b are formed is divided into first and second touch driving areas DA1 and DA2 and a touch sensing area SA Respectively.

Meanwhile, the touch driving electrodes 130a1 and 130a2 according to an embodiment of the present invention function as an electrode for liquid crystal driving, and must be formed of a transparent material because the backlight needs to transmit light. However, since the touch driving electrodes 130a1 and 130a2 are formed of oxide-based transparent conductive materials such as ITO and IZO, the resistance of the touch driving electrodes 130a1 and 130a2 is increased as compared with the case of being formed of a metal-based conductive material. This can degrade the touch performance by increasing the time constants of the loss of the touch signal and the capacitance. Therefore, it is necessary to reduce the resistance caused by the materials used for the touch-driving electrodes 130a1 and 130a2.

In the present invention, the touch driving electrodes 130a1 and 130a2 are connected line by line using the common lines 113a1, 113a2, 113b1 and 113b2, which are signal lines, in order to reduce the resistance of the touch driving electrodes 130a1 and 130a2 and to perform a touch function . On the other hand, the touch sensing electrode 130b is formed only of a transparent electrode such as ITO for mask reduction. Although not shown in the drawing, the touch sensing electrodes 130b are formed to be spaced apart from each other in the first direction, but are formed continuously in the second direction. Such a structure will be described later.

3 and 4, the touch driving electrode 130a1 formed in the first touch driving area DA1 arranged in the first row of the first direction includes two common lines 113a1 and 113a2 and two The touch driving electrode 130a2 formed in the second touch driving area DA2 electrically connected by the auxiliary driving lines 114a1 and 114a2 and arranged in the second row includes two common lines 113b1 and 113b2, And two auxiliary driving lines 114b1 and 114b2. The common lines 113a1, 113a2, 113b1 and 113b2 and the auxiliary driving lines 114a1, 114a2, 114b1 and 114b2 connected to the touch driving electrodes 130a1 and 130a2 are arranged in parallel with the touch driving electrodes 130a1 and 130a2 And are overlapped with each other. The touch sensing electrode 130b formed in the touch sensing area SA arranged in the second direction is electrically connected to the touch sensing line 123a through the auxiliary sensing line 123b.

The relationship between the common lines 113a1, 113a2, 113b1 and 113b2, the auxiliary driving lines 114a1, 114a2, 114b1 and 114b2, the touch driving electrodes 130a1 and 130a2 and the touch sensing electrode 130b will be described with reference to FIGS. This will be described in more detail with reference to FIG. 5 is a plan view of a touch sensor integrated type display device in which subpixels A to B shown in FIG. 3 are enlarged, FIG. 6 is a cross-sectional view taken along line I-I ' Sectional view taken along the line II-II 'shown in FIG. 5, and FIG. 8 is a sectional view taken along the line III-III' shown in FIG.

The common lines 113a1, 113a2, 113b1 and 113b2 are formed on the touch driving electrode 130a1 across the pixel regions PA1, PA7, PA19 and PA25 in the first direction as shown in Figs. 3 and 5 . The auxiliary driving lines 114a1, 114a2, 114b1 and 114b2 are arranged in the horizontal direction in the pixel area PA2, PA3, PA4, PA5, PA8, PA9, PA10, PA11, PA20, PA21, PA22, PA23, PA26, PA27, And is connected to the touch driving electrodes 130a1, 130a2, 130a3, and 130a4 through the contact holes (CH2a, CH2b, CH2c, CH2d, CH2e, CH2f, and CH2g).

The auxiliary driving line 114a1 is connected to the touch driving electrode 130a1 through the first contact hole CH2a formed in the sub pixel area SP3 of the pixel area PA2 within the first touch driving area DA1, And electrically connects the touch driving electrodes 130a1 and 130a2 through the first contact hole CH2b formed in the sub pixel area SP1 of the pixel area PA5. The auxiliary driving line 114b1 is connected to the touch driving electrode 130a3 through the first contact hole CH2e formed in the sub pixel area SP3 of the pixel area PA20 in the second touch driving area DA2, And electrically connects the touch driving electrodes 130a3 and 130a4 through the first contact hole CH2f formed in the sub pixel area SP1 of the pixel area PA23. The auxiliary driving lines 114a1, 114a2, 114b1 and 114b2 are connected to the touch driving line 113a through the touch driving electrodes 130a1, 130a2, 130a3 and 130a4 and the touch driving lines 113a1, 113a2, 113b1 and 113b2, And receives the pulse voltage Vtsp from the touch driving driver 230.

The touch sensing electrode 130b may be formed by horizontally arranging the pixel regions PA3, PA9, PA15, PA21, PA27, PA33, PA4, PA10, PA16, PA22, PA28, PA34 in the second direction as shown in FIGS. It is prolonged. An auxiliary sensing line 123b is formed on the touch sensing electrode 130b across the pixel region PA3. In the present embodiment, only one touch sensing electrode 130b is shown, but when there is another touch sensing electrode on the lower side of the touch sensing electrode 130b, the auxiliary sensing line 123b is connected to another And the touch sensing electrode is connected.

More specifically, the subpixels of the pixel regions PA2 and PA3 in the first touch drive region DA1 will be described with reference to FIGS. 5 to 8. FIG.

5, a plurality of pixel electrodes (not shown) are formed in a region defined by gate lines 110 arranged in a first direction and data lines 120 crossing gate lines 110 on a substrate (not shown) P11 and P12 are formed. A gate electrode 150 extending from the gate line 110, a first source electrode 160a formed of the data line 120 itself, a first drain electrode 160b connected to the pixel electrode P11, The first active layer 165 located in the first thin film transistor TFT1 constitutes the first thin film transistor TFT1. A gate electrode 152 extending from the gate electrode 150 of the first thin film transistor TFT and a second source electrode 162a formed of the data line 120 itself and a second source electrode 162b connected to the pixel electrode P11. Two drain electrodes 162b and a second active layer 167 located therebetween constitute a second thin film transistor TFT2. The first thin film transistor TFT1 is connected to the upper pixel electrode P11 and the second thin film transistor TFT2 is connected to the lower pixel electrode P12. Although not shown, a common electrode (not shown) is disposed under the pixel electrode P12 to form an electric field with the pixel electrodes P11 and P12.

Meanwhile, the auxiliary driving line 114a1 of the present invention is aligned with the gate line 110 and is arranged to cross the data line 120. [ The auxiliary driving line 114a1 is a light shielding film for blocking the light from reaching the active layers 165 and 167 of the first thin film transistor TFT1 and the second thin film transistor TFT2 and the active layers 165 and 167 As shown in FIG. The auxiliary driving line 114a1 is connected to the upper touch driving electrode (= common electrode) through the contact hole CH2a provided between the gate electrodes 150 and 152 and the gate line 110. [ Accordingly, the auxiliary driving line 114a1 is overlapped with the gate line 110 and overlapped with the active layers 165 and 167. [ Particularly, the contact hole CH2a and the first via hole 187 are positioned so as to be surrounded by the gate electrode 152, the gate line 110, and the data line 120. [ That is, the hole portion where the auxiliary driving line 114a1 is connected to the touch driving electrode is positioned so as not to lower the aperture ratio. The auxiliary driving line 114a1 of the present invention is arranged so as to overlap the region where the thin film transistors TFT1 and TFT2 are arranged and the region where the gate line 110 and the data line 120 are arranged, Lt; / RTI > Therefore, compared with the conventional touch sensor integrated type display device, there is an advantage that the aperture ratio can be improved.

More specifically, referring to Fig. 6 cut along the line I-I 'in Fig. 5, an auxiliary driving line 114a1 is located on the substrate SUB. The auxiliary driving line 114a1 serves as a light shielding film for shielding light and serves as a wiring. The auxiliary driving line 114a1 may be formed of a metal having a high conductivity and a high reflectance such as aluminum (Al), silver (Ag), copper . A buffer layer 170 is located on the auxiliary driving line 114a1. The buffer layer 170 may be formed of a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a double layer thereof.

A first active layer 165 is positioned on the buffer layer 170 to overlap with the auxiliary driving line 114a1. The first active layer 165 may use amorphous silicon, or may use polycrystalline silicon that crystallizes amorphous silicon. Alternatively, the first active layer 165 may comprise any one of zinc oxide (ZnO), indium zinc oxide (InZnO), indium gallium zinc oxide (InGaZnO), or zinc tin oxide (ZnSnO). In addition, the first active layer 165 may be made of a low molecular weight or high molecular organic material such as melocyanine, phthalocyanine, pentacene, or thiophene polymer. A gate insulating film 172 is located on the first active layer 165. The gate insulating film 172 may be formed of a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a double layer thereof.

The gate electrode 150 is located on the gate insulating film 172. The gate electrode 150 overlies the first active layer 165 described above. The gate electrode 150 may be formed of any one selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, Alloy, and may be composed of a single layer or multiple layers. An interlayer insulating film 174 is disposed on the gate electrode 150. The interlayer insulating film 174 may be formed of a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a double layer thereof.

The first source electrode 160a and the first drain electrode 160b are located on the interlayer insulating film 174. [ The first source electrode 160a is connected to one side of the first active layer 165 through a contact hole 164a and the first drain electrode 160b is connected to the other side of the first active layer 165 through a contact hole 164b Lt; / RTI > The first thin film transistor TFT1 including the first active layer 165, the gate electrode 150, the first source electrode 160a and the first drain electrode 160b is formed on the substrate SUB . A first passivation film 176 is disposed on the first source electrode 160a and the first drain electrode 160b. The first passivation film 176 may be formed of a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a double layer thereof to insulate and protect the underlying device.

A protective layer 178 is located on the first passivation film 176. The protective layer 178 may be made of an organic material such as polyimide, polyacryl, photoacryl, polyamide, BCB (benzocyclobutane), etc. to alleviate steps of the lower structure . The touch driving electrode 130a1 is located on the first passivation film 176. [ From the viewpoint of the subpixel, the touch-driven electrode 130a1 acts as the common electrode Vcom. The touch driving electrode 130a1 may be formed of a material such as ITO (Indium Tin Oxide), IZO (Indium Tin Oxide), ITZO (Indium Tin Zinc Oxide), ZnO (Zinc Oxide), IGZO (Indium Gallium Zinc Oxide) And may be made of a transparent conductive material. The touch driving electrode 130a1 is provided with a pattern hole 164d so that the pixel electrode is connected to the first thin film transistor TFT1.

The second passivation film 180 is located on the touch-driven electrode 130a1. The second passivation film 180 isolates the pixel electrode from the touch driving electrode 130a1 and is made of the same material as the first passivation film 176 described above. And the pixel electrode P11 is positioned on the second passivation film 180. [ The pixel electrode P11 is connected to the drain electrode 160b of the first thin film transistor TFT1 through the first passivation film 176, the passivation film 178 and the via hole 164c formed in the second passivation film 180 . Therefore, the touch sensor integrated display device of the present invention is constituted.

Referring to FIG. 7, the auxiliary driving line 114a1 is connected to the touch driving electrode 130a1. The auxiliary driving line 114a1 is located on the substrate SUB. The buffer layer 170 is located on the auxiliary driving line 114a1 and the gate insulating film 172 is located on the buffer layer 170. [ A gate line 110 and a second gate electrode 152 are positioned on the gate insulating film 172, and an interlayer insulating film 174 is disposed thereon. A source metal pattern 168 is located on the interlayer insulating film 174. [ The source metal pattern 168 is connected to the auxiliary driving line 114a1 through the contact hole CH2a passing through the buffer layer 170, the gate insulating film 172 and the interlayer insulating film 174. [ The source metal pattern 168 serves as an intermediary for connecting the auxiliary driving pattern to be described later to the auxiliary driving line 114a1.

A first passivation film 176 is located on the source metal pattern 168 and a passivation film 178 is located on the first passivation film 176. The auxiliary driving pattern 185 connected to the touch driving electrode 130a1 is connected to the source metal pattern 168 via the via hole 187. [ The touch driving electrode 130a1 is connected to the auxiliary driving line 114a1 through the auxiliary driving pattern 185 and the source metal pattern 168. [ The second passivation film 180 is positioned on the touch driving electrode 130a1 and the auxiliary driving pattern 185. [

8, the auxiliary sensing line is connected to the touch sensing electrode. The auxiliary driving line 114a1 is located on the substrate SUB. The buffer layer 170 is positioned on the auxiliary driving line 114a1. do. A first active layer 165 is positioned on the buffer layer 170 to overlap with the auxiliary driving line 114a1 and a gate insulating layer 172 is disposed on the first active layer 165. [ A gate electrode 150 is located on the gate insulating film 172 and an interlayer insulating film 174 is located on the gate electrode 150. The first source electrode 160a and the first drain electrode 160b are located on the interlayer insulating film 174 and the first passivation film 176 is formed on the first source electrode 160a and the first drain electrode 160b. Located. A passivation layer 178 is located on the first passivation film 176 and a touch sensing electrode 130b is located on the first passivation film 176. From the viewpoint of the subpixel, the touch sensing electrode 130b serves as the common electrode Vcom. The touch sensing electrode 130b may be formed of a transparent conductive material such as ITO, IZO, ITZO, ZnO, or IGZO that can transmit light. The touch sensing electrode 130b is provided with a pattern hole 164d so that the pixel electrode is connected to the first thin film transistor TFT1.

An auxiliary sensing line 123b is located on the touch sensing electrode 130b. The auxiliary sensing line 123b connects the divided touch sensing electrodes 130b to each other in the second direction (vertical direction) and serves to lower the resistance. Accordingly, the auxiliary sensing line 123b is positioned on the touch sensing electrode 130b and overlaps with the touch sensing electrode 130b. The second passivation film 180 is located on the touch sensing electrode 130b and the auxiliary sensing line 123b.

As described above, the touch sensor integrated type display device according to an embodiment of the present invention has an advantage that the aperture ratio of the display device can be improved by using the light shielding film as an auxiliary driving line for connecting the touch driving electrodes. Particularly, since the auxiliary driving lines are arranged so as to be mostly overlapped with the gate lines and the holes to which the auxiliary driving lines and the touch driving electrodes are connected are also located in the thin film transistor portion, there is an advantage that the aperture ratio of the display device can be improved.

Hereinafter, with reference to FIG. 3, a method of driving the touch-sensor-integrated display device according to an embodiment of the present invention will be described.

3, the gate driver 210 sequentially outputs gate pulses (or scan pulses) in the display mode under the control of the timing controller 204 and sequentially outputs the swing voltage of the output to the gate high voltage VGH and the gate low To the voltage VGL. The gate pulse output from the gate driver 210 is sequentially supplied to the gate lines 110 in synchronization with the data voltage output from the data driver 220. The gate high voltage VGH is higher than the threshold voltage of the thin film transistor T and the gate low voltage VGH is lower than the threshold voltage of the thin film transistor T. The gate drive ICs of the gate driver 210 are connected to the gate lines 110 formed on the substrate of the thin film transistor array TFTA through a TAP (Tape Automated Bonding) process or by a gate in panel (GIP) May be formed directly on the substrate of the thin film transistor array (TFTA).

The data driver 220 samples and latches the digital video data RGB under the control of the timing controller 204. The data driver 220 converts the digital video data RGB to positive / negative gamma compensation voltages GMA1 to GMAn to invert the polarity of the data voltage. The positive / negative polarity data voltage output from the data driver 220 is synchronized with the gate pulse output from the gate driver 210. Each of the source drive ICs (Integrated Circuits) of the data driver 220 may be connected to the data lines 120 of the display unit by a COG (Chip On Glass) process or a TAB (Tape Automated Bonding) process. The source drive IC may be integrated in the timing controller 204 and implemented as a one-chip IC together with the timing controller 204.

The timing controller 204 receives timing control signals for controlling the operation timings of the gate driver 210 and the data driver 220 using timing signals supplied from an external host controller 200 and necessary for driving the display device Occurs. The timing control signals for controlling the operation timings of the gate driver 210 and the data driver 220 are the gate timing control signals for controlling the operation timings of the gate driver 210 and the operation timings of the data driver 220 and the data And a data timing control signal for controlling the polarity of the voltage.

The gate timing control signal includes a gate start pulse (GSP), a gate shift clock (GSC), a gate output enable signal (GOE), and the like. The gate start pulse GSP is applied from the gate driver 210 to the first gate drive IC which outputs the first gate pulse every frame period to control the shift start timing of the gate drive IC. The gate shift clock GSC is a clock signal commonly inputted to the gate drive ICs of the gate driver 210 to shift the gate start pulse GSP. The gate output enable signal GOE controls the output timing of the gate drive ICs of the gate driver 210. [

The data timing control signal includes a source start pulse (SSP), a source sampling clock (SSC), a polarity control signal (POL), and a source output enable signal (SOE) . The source start pulse SSP is applied to the first source drive IC which samples the data first in the data driver 220 to control the data sampling start timing. The source sampling clock SSC is a clock signal that controls the sampling timing of data in the source drive ICs based on the rising or falling edge. The polarity control signal POL controls the polarity of the data voltage output from the source drive ICs. The source output enable signal SOE controls the output timing of the source drive ICs. the source start pulse SSP and the source sampling clock SSC may be omitted if digital video data RGB is input to the data driver 220 through the mini LVDS interface.

The power supply unit 202 includes a DC-DC converter (not shown) including a PWM (Pulse Width Modulation) modulation circuit, a boost converter, a regulator, a charge pump, a voltage divider circuit, and an operational amplifier DC-DC Converter). The power supply unit 202 adjusts an input voltage from the host controller 200 to control the display unit DP, the gate driver 210, the data driver 220, the timing controller 204, and the backlight unit (not shown) Generate power. The power sources output from the power supply unit 202 are connected to the high voltage source VDD, the gate high voltage VGH, the gate low voltage VGL, the common voltage Vcom, the positive / negative polarity gamma reference voltages VGMA1 to VGMAn ), A pulse voltage (Vtsp), and the like. Here, the common voltage Vcom is supplied to the touch driving electrodes 130a1 and 130a2 serving as a common electrode to form a fringe field electric field with the pixel electrode. In addition, the pulse voltage Vtsp is supplied to the touch driving electrodes 130a1 and 130a2 during a period in which the common voltage Vcom is not supplied, and functions as a touch driving electrode for touch recognition. The supply timings of the common voltage Vocm and the pulse voltage Vtsp may be controlled by the host controller 200 or controlled by the timing controller 204. [

The host controller 200 transmits the digital video data RGB of the input image and the timing signals Vsync, Hsync, DE and MCLK necessary for the display driving to the LVDS interface and the Transition Minimized Differential Signaling To the timing controller 204.

The touch driving driver 230 applies the pulse voltage Vtsp generated by the power supply unit 202 to the touch driving electrodes 130a1 and 130b1 through the touch driving lines 113a and 113b and the common lines 113a1, 113a2, 113b1, and 113b2, 130a2, 130a3, and 130a4. The pulse voltages Vtsp supplied to the touch driving electrodes 130a1, 130a2, 130a3, and 130a4 are sequentially supplied in units of rows. That is, the pulse voltage Vtsp is supplied to the auxiliary driving lines 114a1 and 114a2 connected through the touch driving line 113a, the common lines 113a1 and 113a2 and the first contact holes CH2a, CH2b, CH2c, and CH2d, And is supplied to the touch driving electrodes 130a1 and 130a2 arranged in the first row and then supplied to the touch driving line 113b, the common lines 113b1 and 113b2 and the first contact holes CH2e, CH2f, CH2g, CH2h to the auxiliary driving lines 114b1 and 114b2 and supplied to the touch driving electrodes 130a3 and 130a4 arranged in the second row.

The touch driving driver 230 does not apply a pulse voltage to the touch driving electrodes arranged in rows other than the touch driving electrodes in the row to which the pulse voltage Vtsp is applied. For example, when a pulse voltage is applied to the touch driving electrode 130a1 arranged in the first row, a pulse voltage is not applied to the touch driving electrode 130a3 arranged in the second row, and in the floating state, 230 and the touch driving electrode 130a3 is opened. On the other hand, if a pulse voltage is applied to the touch driving electrodes 130a3 arranged in the second row, no pulse voltage is applied to the touch driving electrode 130a1 arranged in the first row, and in a state where no pulse voltage is applied The current path between the touch driving driver 230 and the touch driving electrode 130a1 is opened.

The touch sensing driver 240 is directly connected to the touch sensing electrode 130b and detects a change in capacitance generated between the touch driving electrodes 130a1, 130a2, 130a3, and 130a4 and the touch sensing electrode 130b And determines the x-coordinate and the y-coordinate of the position where the touch is made.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. For example, the x-axis direction and the y-axis direction described in the embodiment of the present invention can be changed in directions opposite to each other, and the size, number and shape of the touch driving electrode and the touch sensing electrode constituting the common electrode , The positions of the touch driving line and the touch sensing line connected to the respective touch electrodes can be arbitrarily changed appropriately and are not limited to those described in the embodiments of the present invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the invention but should be defined by the claims.

110: gate line 114a1: auxiliary driving line
130a1: touch driving electrode 152: second gate electrode
170: buffer layer 172: gate insulating film
174: interlayer insulating film 176: first passivation film
178: Protection film 180: Second passivation film
185: auxiliary driving pattern 187: first via hole

Claims (5)

A gate line and a data line intersecting each other on the substrate to form a plurality of pixel regions;
A thin film transistor and a pixel electrode respectively formed in the plurality of pixel regions;
A common electrode formed to overlap the pixel electrode with an insulating layer interposed therebetween, the common electrode including a touch driving electrode; And
And an auxiliary driving line located between the substrate and the thin film transistor and overlapping the gate line and extending along the gate line,
Wherein the auxiliary driving line is connected to the touch driving electrode through a first contact hole and a first via hole.
An auxiliary drive line located on the substrate;
A buffer layer located on a front surface of the substrate on which the auxiliary driving line is formed;
An active layer located on the buffer layer;
A gate insulating film disposed on a front surface of the substrate on which the active layer is formed;
A gate line located on the gate insulating film;
An interlayer insulating film located on a front surface of the substrate on which the gate line is formed;
A data line formed on the gate insulating film so as to intersect the gate line;
A thin film transistor disposed on the interlayer insulating film and having a source electrode connected to the data line;
A source metal pattern located on the interlayer insulating film so as to be spaced apart from the thin film transistor and connected to the auxiliary driving line through a first contact hole formed in the buffer layer, the gate insulating film, and the interlayer insulating film;
A protective layer disposed on the entire surface of the substrate on which the thin film transistor and the source metal pattern are formed;
An auxiliary driving pattern located on the passivation film and connected to the source metal pattern through a first via hole formed in the passivation film;
A common electrode disposed on the passivation layer and including a touch driving electrode connected to the auxiliary driving pattern;
A passivation film located on the entire surface of the substrate on which the common electrode is formed; And
And a pixel electrode located on the passivation film and connected to the drain electrode through a second via hole formed in the passivation layer,
Wherein the auxiliary driving line overlaps with the gate line and extends along the gate line.
3. The method according to any one of claims 1 to 3,
Wherein the auxiliary driving line is a light shielding film which overlaps with the active layer of the thin film transistor.
3. The method according to any one of claims 1 to 3,
Wherein the gate line includes a gate electrode branched from the gate line,
Wherein the first contact hole and the first via hole are surrounded by the gate electrode, the gate line, and the data line.
3. The method according to any one of claims 1 to 3,
Wherein the active layer, the data line, and the auxiliary driving line are overlapped with each other.

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