KR20120069048A - Light emitting device and method of manufacturing the same - Google Patents
Light emitting device and method of manufacturing the same Download PDFInfo
- Publication number
- KR20120069048A KR20120069048A KR1020100130415A KR20100130415A KR20120069048A KR 20120069048 A KR20120069048 A KR 20120069048A KR 1020100130415 A KR1020100130415 A KR 1020100130415A KR 20100130415 A KR20100130415 A KR 20100130415A KR 20120069048 A KR20120069048 A KR 20120069048A
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- Prior art keywords
- layer
- conductive layer
- light emitting
- emitting device
- conductive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Abstract
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device and a method for manufacturing the same. A light emitting device including a second conductive layer formed to be insulated from a first conductive layer and having a plurality of regions connected to a second semiconductor layer, and first and second contact electrodes respectively connected to the first and second conductive layers. It provides a manufacturing method.
Description
The present invention relates to a light emitting device and a method for manufacturing the same, and more particularly, to a light emitting device and a method for manufacturing the same that can improve heat transfer and current diffusion.
In general, nitrides such as GaN, AlN, InN, and the like have excellent thermal stability and have a direct transition type energy band structure, which has recently attracted much attention as a material for optoelectronic devices. In particular, GaN can be used in high temperature high power devices because the energy bandgap is very large at 3.4 eV at room temperature.
A light emitting device using a GaN semiconductor is generally formed by stacking an N-type GaN layer, an active layer, and a P-type GaN layer on a substrate, and consisting of an N-type electrode and a P-type electrode connected to the N-type GaN layer and the P-type GaN layer, respectively. do. In the light emitting device, when a predetermined current is applied to the N-type electrode and the P-type electrode, electrons provided from the N-type GaN layer and holes provided from the P-type GaN layer are recombined in the active layer to emit light having a wavelength corresponding to the energy gap. Done.
Such light emitting devices may be classified into horizontal light emitting devices and vertical light emitting devices. In the horizontal light emitting device, an N-type GaN layer, an active layer, and a P-type GaN layer are stacked, and a predetermined region of the P-type GaN layer and the active layer is removed to expose the N-type GaN layer, and the P-type GaN layer and the N-type GaN layer are exposed. P-type electrodes and N-type electrodes are respectively formed on the substrate. That is, in the horizontal light emitting device, the N-type electrode and the P-type electrode are positioned horizontally on the same plane.
In addition, the vertical light emitting device is formed by stacking an N-type GaN layer, an active layer, and a P-type GaN layer on an insulating substrate, and then separating the insulating substrate by using a laser or chemical agent, and conducting a conductive or After bonding the semiconductor substrate, an N-type electrode and a P-type electrode are formed on the N-type GaN layer and the substrate, respectively. That is, in the vertical light emitting device, the N-type electrode and the P-type electrode are positioned vertically.
However, in the horizontal light emitting device, since the N-type GaN layer has lower electrical conductivity and greater resistance than metal, current spreading of the N-type GaN layer is difficult, and P is an etching process for exposing the N-type GaN layer. Since a large part of the type GaN layer and the active layer are removed, the area of the light emitting area is severely reduced. In addition, the luminous efficiency and reliability of the current crowding phenomenon is reduced. In addition, since heat is transferred through the sapphire substrate having poor heat transfer characteristics, thermal instability may be caused, and the yield may be lowered in the separation process because the sapphire substrate having high hardness must be cut.
In addition, the vertical light emitting device is not compatible with the measurement device and the horizontal light emitting device because the two electrodes are provided vertically, it is impossible to bond in the same terminal of the package in series connection. In addition, there is a limit to improve current spreading because a metal layer for current spreading cannot be widely disposed on an emission surface that emits light to the outside, that is, an N-type GaN layer, and a portion close to the metal layer formed on the actual N-type GaN layer. As the current is concentrated, there is a limit to increase the light output. In order to maximize heat dissipation when a package in which a vertical light emitting device is mounted is attached to a metal printed circuit board (MPCB), a heat sink of the package must be bonded directly to a metal base. Bonding is not possible because it is connected to the terminal.
The present invention provides a light emitting device and a method for manufacturing the same, which can solve the disadvantages of the horizontal type and the vertical type, and can take advantage of them.
The present invention provides a light emitting device having a first substrate and a second contact electrode horizontally, and having a support substrate having excellent heat transfer characteristics, and a method of manufacturing the same.
The present invention provides a light emitting device in which first and second conductive layers connected to a first semiconductor layer and a second semiconductor layer, respectively, are positioned under an active layer, and a method of manufacturing the same.
The present invention provides a light emitting device in which the support substrate and the first and second contact electrodes are electrically separated to separate the electrical passage and the heat transfer passage, and a method of manufacturing the same.
A light emitting device according to an aspect of the present invention includes a first semiconductor layer, an active layer and a second semiconductor layer formed laminated; A first conductive layer formed in contact with the first semiconductor layer below the active layer; A second conductive layer formed under the first conductive layer and insulated from the first conductive layer, and having a plurality of regions connected to the second semiconductor layer; And first and second contact electrodes connected to the first and second conductive layers, respectively.
The first and second conductive layers are formed on the side opposite to the exit surface.
The first conductive layer is formed in a pattern in which a plurality of regions are removed.
The semiconductor device may further include an interlayer insulating layer formed between the first conductive layer and the second conductive layer.
The second conductive layer may include a connecting portion connected to a plurality of regions of the second semiconductor layer, and the connecting portion may include a plurality of regions in which the first conductive layer has been removed from the interlayer insulating layer, the first semiconductor layer, and the active layer. It is formed through a predetermined area.
The first and second contact electrodes are formed on the same plane.
The first contact electrode is formed in a hole passing through a predetermined region of the first semiconductor layer, the active layer, and the second semiconductor to be connected to the first conductive layer, and the second contact electrode is the first conductive layer, the first conductive layer. It is formed in a hole passing through a predetermined region of the semiconductor layer, the active layer, the second semiconductor layer and the interlayer insulating film and connected to the second conductive layer.
The semiconductor device may further include sidewall spacers formed on the contact hole sidewalls.
A support substrate is formed on the second conductive layer, and the support substrate includes any one of an insulating substrate, a semiconductor substrate, and a conductive substrate having better thermal conductivity than a sapphire substrate.
In the case of the semiconductor substrate or the conductive substrate, the support substrate further includes an insulating layer formed between the support substrate and the second conductive layer.
According to another aspect of the present invention, there is provided a method of manufacturing a light emitting device, including: forming a second semiconductor layer, an active layer, a first semiconductor layer, and a first conductive layer on a dummy substrate; Forming a plurality of first holes exposing a predetermined region of a second semiconductor layer from the first conductive layer; Forming a second conductive layer on the first conductive layer so as to fill the first hole and insulate the first conductive layer; Bonding the support substrate onto the second conductive layer after removing the dummy substrate; Forming second and third holes exposing predetermined regions of the first conductive layer and the second conductive layer, respectively, from the second semiconductor layer; Forming a sidewall insulating film on sidewalls of the second and third holes; And forming first and second contact electrodes to fill the second and third holes.
The first conductive layer is patterned to remove regions where the plurality of first holes and the second contact electrode are formed.
The method may further include forming an interlayer insulating layer on the first conductive layer before forming the plurality of first holes.
In the light emitting device according to the embodiments of the present invention, a first semiconductor layer, an active layer, and a second semiconductor layer are stacked, and a first conductive layer and a plurality of connecting portions contacting the first semiconductor layer under the first semiconductor layer. The second conductive layer connected to the second semiconductor layer is provided insulated by the interlayer insulating film. In addition, the first contact electrode is connected to the first conductive layer and the second contact electrode is connected to the second conductive layer on the same plane, and the support substrate is made of a material having excellent heat transfer characteristics on the rear surface of the second conductive layer. Prepared.
According to the present invention, since the first and second contact electrodes are horizontally formed on the upper side and the support substrate is formed on the lower side, the contact electrodes and the support substrate are separated, so that the bonding is possible directly to the metal base when mounted on the printed circuit board. In addition, since the support substrate is made of a material having excellent heat transfer characteristics, heat dissipation characteristics can be improved.
In addition, since the first conductive layer is formed in contact with the first semiconductor layer and the second conductive layer is formed in contact with the second semiconductor layer in a plurality of regions, the resistance of the first and second semiconductor layers can be minimized. The current spreading characteristic can be improved.
In addition, since the second conductive layer formed under the active layer is formed using a reflective material, light emission efficiency may be improved by reflecting light emitted downward. In addition, since the conductive layer is not formed on the surface from which the light is emitted without etching the active layer and the semiconductor layer, the light extraction area can be increased to improve the light output.
On the other hand, since the first and second electrodes are formed horizontally on the same plane, the horizontal light emitting device and the measurement equipment are compatible.
1 is a plan view and a cross-sectional view of a light emitting device according to an embodiment of the present invention.
2 is a cross-sectional view of a light emitting device according to another embodiment of the present invention.
3 to 10 are cross-sectional views and perspective views sequentially shown to explain a method of manufacturing a light emitting device according to an embodiment of the present invention.
Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention; However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention and to those skilled in the art. It is provided for complete information. In the drawings, the thickness of layers, films, panels, regions, etc., may be exaggerated for clarity, and like reference numerals designate like elements. In addition, if a part such as a layer, film, area, etc. is expressed as “upper” or “on” another part, each part is different from each part as well as being “right up” or “directly above” another part. This includes the case where there is another part between parts.
1 is a plan view and a cross-sectional view of a light emitting device according to an embodiment of the present invention, Figure 1 (a) is a plan view, Figure 1 (b) is a cross-sectional view taken along the line AA 'of Figure 1 (a). 2 is a cross-sectional view of a light emitting device according to another embodiment of the present invention.
Referring to FIG. 1, a
The
The
The
The first
An interlayer insulating
The second
The
The first and
Meanwhile,
As described above, in the light emitting device according to the exemplary embodiment, the
3 to 10 are perspective views and cross-sectional views sequentially shown to explain a method of manufacturing a light emitting device according to an embodiment of the present invention, where (a) is a perspective view, and (b) is (a) Is a cross-sectional view taken along the AA 'line.
Referring to FIG. 3, the
Referring to FIG. 4, after forming the first
Referring to FIG. 5, an
Referring to FIG. 6, the
Referring to FIG. 7, the
Referring to FIG. 8, after the
Referring to FIG. 9, the first
Referring to FIG. 10,
In addition, the manufacturing method of the light emitting device according to the embodiment of the present invention may be variously modified. For example, in the above embodiment, after forming the interlayer insulating
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.
110: first semiconductor layer 120: active layer
130: second semiconductor layer 140: first conductive layer
150: interlayer insulating film 160: second conductive layer
170
190: second contact electrode
Claims (16)
A first conductive layer formed in contact with the first semiconductor layer below the active layer;
A second conductive layer formed under the first conductive layer and insulated from the first conductive layer, and having a plurality of regions connected to the second semiconductor layer;
A light emitting device comprising first and second contact electrodes connected to the first and second conductive layers, respectively.
Forming a plurality of first holes exposing a predetermined region of a second semiconductor layer from the first conductive layer;
Forming a second conductive layer on the first conductive layer so as to fill the first hole and insulate the first conductive layer;
Bonding the support substrate onto the second conductive layer after removing the dummy substrate;
Forming second and third holes exposing predetermined regions of the first conductive layer and the second conductive layer, respectively, from the second semiconductor layer;
Forming sidewall spacers on sidewalls of the second and third holes; And
And forming first and second contact electrodes filling the second and third holes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020100130415A KR20120069048A (en) | 2010-12-20 | 2010-12-20 | Light emitting device and method of manufacturing the same |
Applications Claiming Priority (1)
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KR1020100130415A KR20120069048A (en) | 2010-12-20 | 2010-12-20 | Light emitting device and method of manufacturing the same |
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KR20120069048A true KR20120069048A (en) | 2012-06-28 |
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KR1020100130415A KR20120069048A (en) | 2010-12-20 | 2010-12-20 | Light emitting device and method of manufacturing the same |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190127413A (en) * | 2018-05-04 | 2019-11-13 | 고려대학교 산학협력단 | light emitting diodes |
KR20200037180A (en) * | 2020-03-31 | 2020-04-08 | 고려대학교 산학협력단 | light emitting diodes |
-
2010
- 2010-12-20 KR KR1020100130415A patent/KR20120069048A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190127413A (en) * | 2018-05-04 | 2019-11-13 | 고려대학교 산학협력단 | light emitting diodes |
KR20200037180A (en) * | 2020-03-31 | 2020-04-08 | 고려대학교 산학협력단 | light emitting diodes |
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