KR20120065892A - Adhesive film for semiconductor - Google Patents

Abstract

PURPOSE: An adhesive film for semiconductor is provided to have double-layered structure which have different physical properties from each other, thereby having excellent separation properties in dicing process and excellent wire penetration performance in packaging process, and capable of remarkably reducing foamable void. CONSTITUTION: An adhesive film for semiconductor comprises a first adhesive layer(102) in which silica(112) with first average diameter is contained, a second adhesive layer(104) in which silica(114) with second average diameter larger than the first average diameter, laminated on the first adhesive layer. The modulus ratio of the first adhesive layer to the second adhesive layer at 150°C is 1-5. The silica is spherical silica. The first average diameter is 0.01-1.0 micron. The second average diameter is 0.1-5.0 micron. The silica content of the first adhesive layer is 20-40 weight% based on the whole first adhesive layer.

Description

Adhesive film for semiconductors {ADHESIVE FILM FOR SEMICONDUCTOR}

The present invention relates to an adhesive film for semiconductors. More specifically, the present invention has a two-layer structure consisting of a first adhesive layer and a second adhesive layer, to increase the average particle diameter of the silica included in the second adhesive layer, the modulus at 150 ℃ of the second adhesive layer to the first adhesive layer By setting the ratio of 1 to 3, the present invention relates to a two-layered adhesive film for semiconductors capable of imparting good separation properties to the first adhesive layer and good flow characteristics to the second adhesive layer.

Conventionally, silver paste has been mainly used for joining a semiconductor element and an element or support member, but according to the tendency of miniaturization and large capacity of semiconductor elements, the support member used for this is also required to be miniaturized and refined.

Silver paste, which has been widely used in the related art, has disadvantages such as abnormality at the time of wire bonding due to protrusion or inclination of a semiconductor device, bubble generation, and difficulty in controlling thickness. Therefore, in recent years, the adhesive film is mainly used instead of silver paste.

The adhesive film used for semiconductor assembly is mainly used together with a dicing film, and the dicing film refers to a film used for fixing a semiconductor wafer in a dicing process. The dicing process is a process of cutting into individual chips from a semiconductor wafer, and an expand process, a pick-up process and a mounting process are performed successively to the dicing process. Such a dicing film is usually constituted by coating an ultraviolet curable or general curable pressure-sensitive adhesive on a vinyl chloride or polyolefin-based base film, and adhering a cover film of PET material thereon.

On the other hand, the general use of the adhesive film for assembling the semiconductor is attached to the adhesive film on the semiconductor wafer (wafer), and the dicing film having the configuration as described above is overlaid with the cover film removed in accordance with the dicing process To fragment. In recent years, as an adhesive for assembling semiconductors for dicing die bonding, a dicing film from which a PET cover film has been removed and an adhesive film are laminated to each other to form a single film, and then a semiconductor wafer is attached thereon and fragmented according to a dicing process. . In the dicing process, there is a cutting method using a diamond blade. However, in the cutting method using the diamond blade, there is a problem of inferior defect and deterioration of reliability of the chip stacking process, in which burrs and foreign materials that are rolled up like a silage of the adhesive layer are caused by the rotation of the blade.

In addition, as the thickness of the wafer becomes thin due to the thinning and shortening of electronic products and the miniaturization of circuit patterns, physical cutting by diamond blades has reached its limit. In order to solve this problem, a stealth die for condensing a laser inside the wafer to selectively form a modified portion, and then individualizing the wafer along with an adhesive layer along the selective modified line through physical tension at a low temperature of -10 to 0 ° C. Stealth dicing is emerging.

However, the stealth dicing method also has a problem in that the brittleness of the adhesive or the adhesive layer in contact with the wafer is weakly broken during the fragmentation of the wafer. In addition, when brittleness is increased in order to improve the dividing property of the dicing film, a problem arises in that wire penetration characteristics are deteriorated in a subsequent packaging process.

One object of the present invention is to provide an adhesive film for semiconductors that can improve the separability of the adhesive layer in the silicon wafer slicing process and has less foaming voids and maintains a wire loop after bonding.

It is another object of the present invention to provide an adhesive film having a two-layer structure in which a first adhesive layer in direct contact with a wafer is excellent in dividing property, and a second adhesive layer in contact with the first adhesive layer is excellent in wire penetration characteristics.

The above and other objects of the present invention can be achieved by the present invention described in detail.

One aspect of the present invention relates to an adhesive film for a semiconductor, comprising: a first adhesive layer containing silica having a first average particle diameter and a silica laminated on the first adhesive layer and having a second average particle diameter larger than the first average particle diameter It includes a second adhesive layer containing, characterized in that the ratio of the modulus at 150 ℃ of the first adhesive layer to the second adhesive layer is 1 to 5.

In embodiments, the ratio of the modulus at 150 ° C. of the first adhesive layer to the second adhesive layer may be 1 to 3.

In embodiments, the silica may be spherical silica.

In embodiments, the first average particle diameter may be 0.01 to 1.0 μm.

In embodiments, the second average particle diameter may be 0.1 to 5.0 μm.

In embodiments, the ratio of the second average particle diameter to the first average particle diameter may be 10 to 80.

In embodiments, the silica content of the first adhesive layer may be 20 to 40% by weight based on the entire first adhesive layer.

In embodiments, the silica content of the second adhesive layer may be 20 to 40% by weight based on the entire second adhesive layer.

In embodiments, the modulus at 150 degrees of the first adhesive layer may be 3E + 5 Pa to 6E + 5 Pa.

In embodiments, the modulus at 150 degrees of the second adhesive layer may be 1E + 5 Pa to 2E + 5 Pa.

In an embodiment, the adhesive layer may further include a lower adhesive layer.

In embodiments, the substrate film may be further formed on the lower portion of the adhesive layer.

In an embodiment, the adhesive film for semiconductor of the present invention may be an adhesive film for stealth dicing comprising the adhesive film of the two-layer structure.

The present invention provides an adhesive film for semiconductors having a first adhesive layer and a second adhesive layer having different physical properties, thereby providing excellent separation characteristics during the ashing process and wire penetration characteristics during the packaging process, less foaming voids, and a wire after bonding. There is an advantage that the loop can be kept well.

1 is a cross-sectional view of an adhesive film for a semiconductor according to an embodiment of the present invention.
2 is a cross-sectional view of a dicing die bonding film in one embodiment of the present invention.
3A to 3C are cross-sectional views illustrating a dicing process using a dicing die bonding film according to an embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. However, the following examples are provided to aid the understanding of the present invention, and the scope of the present invention is not limited to the following examples. Details that are not described herein will be omitted since those skilled in the art can sufficiently infer technically.

1 is a cross-sectional view of an adhesive film for a semiconductor according to an embodiment of the present invention. As shown in FIG. 1, an adhesive film for a semiconductor according to an embodiment of the present invention includes a first adhesive layer 102 containing silica 112 having a first average particle diameter and a second larger than the first average particle diameter. A second adhesive layer 104 containing silica 114 having an average particle diameter, wherein a ratio of modulus at 150 ° C. of the first adhesive layer 102 to the second adhesive layer 104 is preferably 1 to 5, preferably It may be 1 to 3. The first adhesive layer 102 is a portion in contact with the substrate W during a wafer backside lamination (WBL) process, and may be configured to have a relatively high modulus relative to the second adhesive layer 104 at room temperature to low temperature.

In general, the fine silica size of less than 0.01㎛ has a large specific surface area and evenly dispersed in the resin may increase the toughness rather than brittle at room temperature to low temperature may adversely affect the segmentability. In addition, the larger the size (particle size) of silica for the same amount of silica, the wider the pores between the silica and the silica, and when coated with a film, the pores may be filled with a soft resin. That is, as the size of the silica increases, the ratio of the soft resin filling the voids increases, so that the splitting characteristics at room temperature to low temperature may decrease.

The first adhesive layer 102 has a higher modulus than the second adhesive layer 104 at a relatively low temperature from a normal temperature to a low temperature in order to transfer the dividing force transmitted from the dicing tape and the soft second adhesive layer 104 to the wafer W well. It should have sufficient brittleness. To this end, the first average particle diameter may include silica having a thickness of 0.01 to 1.0 μm, and exhibits a relatively high brittleness to modulus within the above range, and thus may exhibit good splitting characteristics.

On the other hand, the silica included in the first adhesive layer 102 may be included in 20 to 40% by weight, preferably 30 to 40% by weight based on the entire first adhesive layer. If the silica content range is known, the foamed voids may occur less than 5%.

The second adhesive layer 104 should have a wire penetration characteristic at 100 ~ 160 ℃ corresponding to the chip packaging process temperature and have a fluidity corresponding thereto. Reducing the content of silica can increase the fluidity by increasing the proportion of soft resins, but the volatilization voids may increase due to the volatilities from the soft low molecular resins. Particle diameter ratio). To this end, the second adhesive layer 104 may include silica having an average particle diameter of 0.1 ~ 5.0㎛. That is, by making the size (average particle diameter) of the silica included in the second adhesive layer 104 larger than the size of the silica included in the first adhesive layer 102, the gap between the silica and the silica may be widened and coated on a film. The voids can then be filled with soft resins to increase the flow characteristics of the film.

The ratio of the average particle diameter of the silica used for the first adhesive layer 102 and the second adhesive layer 104 is in the range of 1:10 to 80, more preferably 1:10 to 50, but in the ratio of the average particle diameter, the first The dividing property of the adhesive layer and the wire penetration property of the second adhesive layer can be exhibited satisfactorily. That is, the ratio of the modulus of the first adhesive layer 102 to the second adhesive layer 104 is in the range of 1 to 5, preferably in the range of 1 to 3, the separation characteristics of the first adhesive layer and the flow characteristics of the second adhesive layer are good. The range of modulus can be adjusted by the ratio of the average particle diameter.

Meanwhile, the modulus of the second adhesive layer 104 having a thickness of 400 μm may be 1E + 5 Pa to 2E + 5 Pa, which may exhibit good flow characteristics and thus good wire penetration characteristics in the above range. Modulus at 150 degrees of the first adhesive layer 102 may be 3E + 5 Pa to 6E + 5 Pa.

Although the shape of the silica 112 and 114 used for the said 1st adhesion layer and the 2nd adhesion layer is not specifically limited, Spherical silica is preferable and monodisperse spherical silica is more preferable. The silica may be a silica produced by a liquid phase method such as a sol gel method, a precipitation method, or a silica produced by a gas phase method such as a flame oxidation method.

On the other hand, the first adhesive layer 102 is in contact with the substrate during the WBL process, the substrate may be a silicon wafer as an example, but the present invention is not limited thereto, and of course, a sapphire substrate may be used.

2 is a cross-sectional view of an adhesive film for a semiconductor according to an embodiment of the present invention, which shows a dicing die bonding film as an example. The dicing die bonding film may be coated with an adhesive layer 106 on a base film 108 capable of expanding, such as a polyolefin film, and a second adhesive layer 104 and a first adhesive layer 102 on the adhesive layer. ) May be sequentially formed, and there may be further a release film 101 for protecting the first adhesive layer 102 and / or the second adhesive layer 104.

Examples of the base film 108 include polyethylene, polypropylene, ethylene / propylene copolymers, polybutene-1, ethylene / vinyl acetate copolymers, mixtures of polyethylene / styrenebutadiene rubbers, polyolefin-based films such as polyvinyl chloride films, and the like. This can be used. In addition, polymers such as polyethylene terephthalate, polycarbonate, poly (methyl methacrylate), thermoplastic elastomers such as polyurethane and polyamide-polyol copolymers, and mixtures thereof can be used, and these base films 100 are die In order to improve the cutting property and expandability at the time of cutting, it may have a multilayer structure.

The method of forming the adhesive layer 106 on the base film 108 may be directly coated, or may be transferred by a transfer method after completion of drying after coating on a release film or the like. The application method for forming the adhesive layer 106, whether the former or the latter, can form a uniform coating layer, and there is no limitation, and bar coating, gravure coating, comma coating, reverse roll coating, applicator coating, spray coating, lip Methods such as coating can be used.

There is no restriction on the kind of the adhesive layer 106 used in the dicing die bonding film according to an embodiment of the present invention. For example, a photocurable adhesive composition, a thermosetting adhesive composition, or the like may be used.

Hereinafter, referring to FIGS. 3A to 3C, a dicing process using a ashing die bonding film which is an example of an adhesive film for a semiconductor of the present invention will be described.

First, as illustrated in FIG. 3A, after the release film 101 is peeled off, the adhesive film for semiconductor having a two-layer structure according to the exemplary embodiment of the present invention is laminated on the back surface of the wafer (W).

Next, as shown in FIG. 3B, a dicing process is performed to cut the wafer W to the size of the designed circuit. As an example of the dicing, stealth dicing may be performed. Stealth dicing is modified using a laser to leave 10 to 30% of the thickness of the wafer, and the first adhesive layer 102 in contact with the wafer (W). No physical action is applied to the second adhesive layer 104.

Next, as illustrated in FIG. 3C, the wafer w is fragmented using an expansion device. At this time, the horizontal direction of the wafer (W) modified in the thickness direction, the first adhesive layer 102, the second adhesive layer 104, the adhesive layer 106 and the substrate film 108 of the lower surface of the wafer (horizontal direction in the drawing) When stretching, the lateral stretching force is transferred to the wafer W so that the wafer is divided along the modified line. At this time, the wafer W and the adhesive layer are divided at the same time, which is advantageous for the subsequent pick-up process. In the adhesive film according to the exemplary embodiment of the present invention, the brittle first adhesive layer 102 is divided with the wafer W at the same time, thereby providing excellent separation. The second adhesive layer 104 exhibits excellent wire penetration characteristics during die packaging.

The polymer resin, the epoxy resin, the curing agent, the curing catalyst and other additives in the composition for manufacturing the first adhesive layer and the second adhesive layer of the adhesive film for a semiconductor according to an embodiment of the present invention may have a general configuration, the content It may be a general configuration.

a) polymer resin

The polymer resin used in the present invention is not particularly limited as long as it is commonly used in the art. Examples of the polymer resin include polyimide resin, polystyrene resin, polyethylene resin, polyester resin, polyamide resin, butadiene rubber, acrylic rubber, (meth) acrylic resin, urethane resin, polyphenylene ether resin, polyether imide Resins, phenoxy resins, polycarbonate resins, polyphenylene ether resins, modified polyphenylene ether resins, mixtures thereof and the like can be used, but is not limited thereto.

Moreover, the epoxy group containing (meth) acryl copolymer containing functional monomers, such as a high molecular component containing a functional monomer, for example, glycidyl acrylate or glycidyl methacrylate, can also be used. As said epoxy group containing (meth) acryl copolymer, a (meth) acrylic ester copolymer, an acrylic rubber, etc. can be used.

b) epoxy resin

The epoxy resin used in the present invention is a curing and adhesive action, and if the type is commonly used in the art is not particularly limited, and may include any one or more of a liquid epoxy resin or a solid epoxy resin.

Examples of the liquid epoxy resins include bisphenol A liquid epoxy resins, bisphenol F liquid epoxy resins, trifunctional or higher polyfunctional liquid epoxy resins, rubber modified liquid epoxy resins, urethane modified liquid epoxy resins, acrylic modified liquid epoxy resins and photosensitive resins. A liquid epoxy resin can be used individually or in mixture.

The solid epoxy resin may be an epoxy resin having one or more functional groups as a solid at or near to solid phase at room temperature, for example, bisphenol-based epoxy, phenol novolac-based epoxy, o-cresol novolac ( Cresol novolac) epoxy, polyfunctional epoxy, amine epoxy, heterocyclic containing epoxy, substituted epoxy, naphthol epoxy and derivatives thereof can be used.

Bisphenol-based products include YD-017H, YD-020, YD020-L, YD-014, YD-014ER, YD-013K, YD-019K, YD-019, and YD. -017R, YD-017, YD-012, YD-011H, YD-011S, YD-011, YDF-2004, YDF-2001, and the like.Phenol novolac-based coat coat of Yuka Shell Epoxy Co., Ltd. 152, Epicoat 154, EPPN-201 of Nippon Kayaku Co., Ltd., DN-483 of Dow Chemical, YDPN-641, YDPN-638A80, YDPN-638, YDPN-637, YDPN-644, YDPN-631 of Kukdo Chemical. , o-Cresol novolac system, YDCN-500-1P, YDCN-500-2P, YDCN-500-4P, YDCN-500-5P, YDCN-500-7P, YDCN-500-8P , YDCN-500-10P, YDCN-500-80P, YDCN-500-80PCA60, YDCN-500-80PBC60, YDCN-500-90P, YDCN-500-90PA75, etc., and EOCN-102S, EOCN-103S of Nippon Kayaku Co., Ltd. , EOCN-104S, EOCN-1012, EOCN-1025, EOCN-1027, YDCN-701, YDCN-702, YDCN-703, YDCN-704 from Japan Dokdo Chemical Co., Ltd. N-665-EXP, and bisphenol novolac epoxy, include KBPN-110, KBPN-120, KBPN-115, etc. of Kukdo Chemical, and Yuka Shell Epoxy Co., Ltd. Epon 1031S, Chivas Specialty Chemical Co., Ltd. Araldito 0163, Nata-Centigrade, Detacol EX-611, Detacol EX-614, Detacol EX-614B, Detacol EX-622, Detacol EX-512, Detacol EX-521, Deta Call EX-421, Detacall EX-411, Detacall EX-321, Kukdo Chemical EP-5200R, KD-1012, EP-5100R, KD-1011, KDT-4400A70, KDT-4400, YH-434L, YH- 434, YH-300 and the like.Amine epoxy resins include Yuka Shell Epoxy Epicoat 604, Dokdo Chemical Co., Ltd. YH-434, Mitsubishi Gas Chemical Co., Ltd., TETRAD-X, TETRAD-C, and Sumitomo Chemical Co., Ltd. Examples of the heterocyclic epoxy resin include PT-810 of CIBA Specialty Chemical Co., Ltd. and ERL-4234, ERL-4299, of UCC Corp. Examples of ERL-4221, ERL-4206, and naphthol-based epoxy include epiclon HP-4032, epiclon HP-4032D, epiclon HP-4700, and epiclon 4701 of Japan Ink Chem. The above can be mixed and used.

c) curing agent

The type of curing agent used in the present invention is not particularly limited as long as it is commonly used in the art. A phenol type epoxy resin hardening | curing agent can be used as said hardening | curing agent, Bisphenol-type resins, such as bisphenol A, bisphenol F, bisphenol S; Phenol novolac resins; Bisphenol A novolac resins; Phenolic resins, such as a xylolic system, a cresol novolak, a biphenyl system, etc. can be used.

Examples of products currently commercially available as such phenolic epoxy resin curing agents include simple phenolic curing agents such as H-1, H-4, HF-1M, HF-3M, HF-4M and HF- of Meihwa Plastic Industry Co., Ltd. 45, etc., KPH- of MEH-78004S, MEH-7800SS, MEH-7800S, MEH-7800M, MEH-7800H, MEH-7800HH, MEH-78003H and KOLON Emulsion Co., Ltd. F3065, biphenyl series MEH-7851SS, MEH-7851S, MEH7851M, MEH-7851H, MEH-78513H, MEH-78514H, KOLON Emulsion Co., Ltd. MEH-7500, MEH-75003S, MEH-7500SS, MEH-7500S, MEH-7500H, etc. of Industrial Co., Ltd., These can be used individually or in mixture of 2 or more types.

d) curing catalyst

The curing catalyst used in the present invention is a catalyst for shortening the curing time so that the epoxy resin can be completely cured during the semiconductor process, and the type thereof is not particularly limited, but may be a melamine-based, imidazole-based, triphenylphosphine-based catalyst, or the like. Can be used. Examples of commercially available products include PN-23, PN-40 of Ajinomoto Precision Technology Co., Ltd., 2P4MZ, 2MA-OK, 2MAOK-PW, and 2P4MHZ of Ajinomoto Precision Technology Co., Ltd. CHEMICAL INDUSTRY CO., LTD), TPP-K, TPP-MK, etc., and these can be used individually or in mixture of 2 or more types.

e) coupling agent

Coupling agents that can be used in the adhesive film for semiconductors of the two-layer structure of the present invention serves as an adhesion promoter to enhance the adhesion due to the chemical bonding between the organic material and the surface of the inorganic material, such as silica.

The coupling agent may be a commonly used silane coupling agent, for example, epoxy-containing 2- (3,4 epoxy cyclohexyl) -ethyltrimethoxysilane, 3-glycidoxytrimethoxysilane, 3-glycidoxypropyltriethoxysilane, N-2 (aminoethyl) 3-amitopropylmethyldimethoxysilane containing amine group, N-2 (aminoethyl) 3-aminopropyltrimethoxysilane, N- 2 (aminoethyl) 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysil-N- (1,3-dimethylbutylidene ) Propylamine, N-phenyl-3-aminopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane with mercapto, 3-mercaptopropyltriethoxysilane, 3-isocyanatepropyl with isocyanate Triethoxysilane and the like, and these may be used alone or in combination of two or more thereof. have.

f) other

On the other hand, the adhesive composition of the present invention as described above may further comprise an organic solvent. The organic solvent lowers the viscosity of the adhesive composition for the semiconductor to facilitate the manufacture of the film, specifically, toluene, xylene, propylene glycol monomethyl ether acetate, benzene, acetone, methyl ethyl ketone, tetrahydrofuran, dimethylformaldehyde , Cyclohexanone and the like can be used.

In addition, the adhesive composition for a semiconductor of the present invention may further include an ion trapping agent in order to adsorb ionic impurities and to implement insulation reliability during moisture absorption. As the ion trapping agent, a triazine thiol compound, a zirconium compound, an antimony bismuth compound, a magnesium aluminum compound, or the like may be used.

Example  And Comparative example

The invention can be better understood by the following examples and comparative examples (see Table 1), the following examples are for the purpose of illustration of the invention and the scope of protection defined by the appended claims It is not intended to be limiting.

The adhesive composition of Table 1 was prepared to prepare an adhesive film for semiconductors, and polymer resins, epoxy, curing agents, curing catalysts, and other additives except for the spherical silica content and the average particle diameter may be used as the composition of a general adhesive film for semiconductors. have.

Modulus was measured as follows using an ARES Rheometer.

In order to measure the viscosity of the specimens in the form of a film, the film of each first adhesive layer or the film of the second adhesive layer is laminated in seven layers at 60 ° C. Thereby, thickness becomes about 400-420 micrometers. Then, after cutting circularly with a diameter of 8 mm, using a Ares measuring instrument of TA, a frequency of 1 rad / s per second was applied at 30 The modulus is measured by raising the shear temperature from 200 캜 to 200 캜 and measuring the shear stress. At this time, the temperature rising conditions are set at the temperature increase rate of 50 degree-C / min. The value at 150 degreeC which is a die attach temperature was acquired.

Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 First adhesive layer Silica content
(weight%) 20 30 40 10 40 Silica Average Particle Size
(D1, μm) 0.05 0.05 0.05 0.5 0.01 150 ℃ modulus
(M1, Pa) 360,000 359,000 363,000 23,000 7,500,000 2nd adhesive layer Silica content
(weight%) 20 30 40 10 40 Silica Average Particle Size
(D2, μm) 4 0.5 2.5 0.05 2.5 150 ℃ modulus
(M2, Pa) 123,000 190,000 150,000 363,000 150,000 Silica Average Particle Size Ratio
(D2 / D1) 80 10 50 0.1 250 150 ℃ modulus ratio
(M1 / M2) 2.93 1.89 2.42 0.063 50

Table 2 shows the results of evaluating the properties of the adhesive film for semiconductors prepared according to Examples 1 to 3 and Comparative Examples 1 and 2, the evaluation of the prepared adhesive film was performed as follows.

[Adhesion Layer Breakdown Rate]

Each of the adhesive films prepared according to Examples 1 to 3 and Comparative Examples 1 to 2 was wide coated, and then laminated on a dicing tape, and the laminated film was laminated again on a 50 μm wafer. Since it is mounted on a ring frame to form a modified portion 30㎛ the center of the wafer using a laser. At this time, the size of the chip was diced into 10mm x 10mm and the ring expansion was carried out while fixing the temperature at 0 ℃. At this time, the adhesive layer of the total modified line was measured by the number of lines well segmented.

[Foamable void]

A 725 μm thick wafer coated with a dioxide film was cut to a size of 5 mm × 5 mm, and then laminated at 60 ° C. with an adhesive film, and cut, leaving only the adhesive part. A 10mm x 10mm PCB with a thickness of 1mm is placed on a hotplate with a temperature of 100 ° C, and a piece of adhesive-laminated wafer is pressed onto the substrate with a force of 1.0 kgf for 1.0 seconds, and then irradiated with attaching voids by scanning with SAT (Scanning Acoustic Tomograph). The good level of attach void) was evaluated. After evaluation, the cured product was cured at 125 ° C. for 4 hours in order to examine the degree of void removal, and the specimen was pressurized for 18 seconds with a force of 1 MPa at 175 ° C., and then the good level of molding voids was evaluated by SAT.

[Keep wire loop after bonding]

The wire-bonded TAG wafer was placed on a hotplate with a temperature of 120 ° C, pressed against it with 1.0 kgf for 1.0 seconds of the same size wafer with adhesive lamination, and the cross section was observed under a microscope. Was evaluated.

Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Adhesive layer breakdown rate (%) 95 100 100 0 30 Effervescent Void (%) 5 2 0 30 0 Keep wire loops after bonding Good Good Good Bad Keep some

As shown in Table 2, the adhesion layer fractionation rate of Examples 1 to 3, in which the modulus ratio (M1 / M2) at 150 ° C. is 1 to 5, was better than 95%. In this case, 0% and 30% showed very low adhesion layer breakdown rates, respectively.

In addition, in the case of the foamed voids, in Examples 1 to 3, Comparative Example 2 was found to be a good level (5% or less), in the case of Comparative Example 1 it can be seen that the foaming voids are very large. In addition, it can be seen that in Examples 1 to 3, the wire loop is maintained well after bonding, whereas Comparative Example 2 maintains only a part of the wire loop. That is, the adhesive layer breaking rate, the foaming voids, and the wire loop retention properties after bonding are all good in the modulus ratio (M1 / M2) of 1 to 5, more preferably 1 to 3, at 150 ° C. It can be seen that.

The present invention is not limited to the above embodiments, but may be manufactured in various forms, and a person skilled in the art to which the present invention pertains has another specific form without changing the technical spirit or essential features of the present invention. It will be appreciated that the present invention may be practiced as. It is therefore to be understood that the embodiments described above are in all respects illustrative and not restrictive.

102: first adhesive layer 104: second adhesive layer
112, 114: Silica

Claims (13)

A first adhesive layer containing silica having a first average particle diameter; And
Including a second adhesive layer laminated on the first adhesive layer and containing silica having a second average particle diameter larger than the first average particle diameter,
Adhesive film for semiconductors whose ratio of modulus at 150 degreeC of a 1st adhesive layer with respect to a said 2nd adhesive layer is 1-5.
The adhesive film for semiconductors of Claim 1 whose ratio of modulus at 150 degreeC of a 1st adhesive layer with respect to a said 2nd adhesive layer is 1-3.
The adhesive film for semiconductor according to claim 1, wherein the silica is spherical silica.
The adhesive film for semiconductor according to claim 1, wherein the first average particle diameter is 0.01 to 1.0 μm.
The adhesive film for semiconductor according to claim 1, wherein the second average particle diameter is 0.1 to 5.0 μm.
The adhesive film for semiconductor according to claim 1, wherein the ratio of the second average particle diameter to the first average particle diameter is 10 to 80.
According to claim 1, wherein the silica content of the first adhesive layer is a semiconductor adhesive film of 20 to 40% by weight based on the entire first adhesive layer.
The adhesive film for semiconductor according to claim 1, wherein the silica content of the second adhesive layer is 20 to 40% by weight based on the entire second adhesive layer.
The adhesive film for semiconductor according to claim 1, wherein the modulus at 150 degrees of the first adhesive layer is 3E + 5 Pa to 6E + 5 Pa.
The adhesive film for semiconductor according to claim 1, wherein the modulus at 150 degrees of the second adhesive layer is 1E + 5 Pa to 2E + 5 Pa.
The adhesive film for semiconductor according to claim 1, further comprising an adhesive layer under the second adhesive layer.
The adhesive film for semiconductors according to claim 11, further comprising a base film formed under the adhesive layer.
The adhesive film for semiconductors for stealth dicing containing the adhesive film of the 2-layer structure of Claim 1-12.

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