KR20120055361A - Reflection type liquid crystal display device and method of fabricating the same - Google Patents

Abstract

PURPOSE: A reflective liquid crystal display device and a manufacturing method thereof are provided to omit mask processes for forming embossing and patterning a reflective plate, thereby simplifying processes. CONSTITUTION: A liquid crystal panel(102) comprises first and second substrates(110,160) and a liquid crystal layer(180) which is between the first and second substrates. A reflective plate(150) is made of multi-layered thin films. A λ/2 phase difference film(172) is formed on an external surface of the second substrate of the liquid crystal panel. A polarization plate is formed on the λ/2 phase difference film.

Description

Reflection type liquid crystal display device and method of fabricating the same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a reflective liquid crystal display device and a method for manufacturing the same, which can realize process reduction and cost reduction.

Recently, with the rapid development of the information society, the need for a flat panel display having excellent characteristics such as thinning, light weight, and low power consumption has emerged.

Such a flat panel display may be divided according to whether it emits light or not. A light emitting display is one that displays an image by emitting light by itself, and a display is performed by displaying an image using an external light source. It is called a display device. The light emitting display device includes a plasma display device, a field emission display device, an electro luminescence display device, and the like. The light receiving display device includes a liquid crystal display device ( liquid crystal display device).

Dual liquid crystal display devices are being actively applied to notebooks and desktop monitors because of their excellent resolution, color display, and image quality.

In general, a liquid crystal display device arranges two substrates on which electrodes are formed so that the surfaces on which the two electrodes are formed face each other, injects a liquid crystal between the two substrates, and applies a voltage to the two electrodes to generate an electric field. By moving the liquid crystal molecules to adjust the light transmittance of the device to represent the image.

However, the liquid crystal display device does not emit light as described above, so a separate light source is required.

Therefore, a backlight unit is formed on the back of the liquid crystal panel, and light emitted from the backlight unit is incident on the liquid crystal panel to display an image by adjusting the amount of light according to the arrangement of liquid crystals.

Such a liquid crystal display device is called a transmission type liquid crystal display device. Since the liquid crystal display device uses an artificial back light source such as a backlight unit, it can realize a bright image even in a dark external environment, but consumes power consumed by the backlight unit. (Power consumption) has a disadvantage in that the battery is quickly consumed when used as a portable medium powered by a battery.

Therefore, a reflection type liquid crystal display device has been proposed to compensate for such a disadvantage of large power consumption.

Reflective liquid crystal display uses external natural light or artificial light as a light source to allow these external light to enter the image display area, and then reflects it again to display an image in the form of adjusting the light transmittance according to the arrangement of liquid crystals. Done. Therefore, since the backlight unit is not required, the power consumption is lower than that of the transmissive liquid crystal display.

1 is a cross-sectional view of one pixel area of a general reflective liquid crystal display device.

As shown, first, in the array substrate 11, a gate wiring (not shown) and a gate electrode 15 are connected to the gate substrate 15, and a gate insulating film 18 is formed thereon.

Next, a semiconductor layer 20 including an ohmic contact layer 20b spaced apart from the active layer 20a is formed on the gate insulating layer 18 to correspond to the gate electrode 15. The source and drain electrodes 27 and 29 are spaced apart from each other on the ohmic contact layer 20b, and the sequentially stacked gate electrode 15, the gate insulating film 18, and the semiconductor layer 20 and the source are formed. The drain electrodes 27 and 29 form a thin film transistor Tr.

On the other hand, the gate insulating layer 18 on which the source and drain electrodes 27 and 29 are formed is connected to the source electrode 27 and intersects with the gate wiring (not shown) to define the pixel region P, and the data wiring. 25 is formed.

Next, a first passivation layer 30 made of an inorganic insulating material is formed on the entire surface of the display area above the data line 25 and the source and drain electrodes 27 and 29, and the organic layer is formed on the first passivation layer 30. A second protective layer 33 made of an insulating material is formed. At this time, the second protective layer 33 is characterized in that the embossed structure is convex surface.

Except for the portion where the drain contact hole 47 for exposing the drain electrode 29 in each pixel area P is formed on the entire surface of the display area above the second passivation layer 33, the metal material has excellent reflection efficiency. The reflecting plate 40 made up is provided.

In addition, a third passivation layer 45 is formed on the front surface of the display area to cover the reflective plate 40 and is formed of an organic insulating material and has a flat surface.

In this case, the first, second, and third protection layers 30, 33, and 45 are provided with drain contact holes 47 exposing the drain electrode 29 of the thin film transistor Tr. A pixel electrode 50 is formed in each pixel area P in contact with the drain electrode 29 through the drain contact hole 35.

On the other hand, a black matrix 63 is formed on the inner surface of the color filter substrate 61 corresponding to the array substrate 11 having the above-described structure, corresponding to the gate and data wiring (not shown) 25. The color filter 65 layer overlapping with the pixel region P and having the color filter patterns R, G, and B of red, green, and blue are sequentially and repeatedly formed, and the color filter layer 65 is formed. The common electrode 67 made of a transparent conductive material is formed below.

Next, a liquid crystal layer 80 is interposed between the pixel electrode 50 and the common electrode 67, and the liquid crystal molecules in the liquid crystal layer 80 are respectively disposed on the pixel electrode 50 and the common electrode 67. When a voltage is applied, the arrangement state is changed by the electric field generated between these two electrodes 50, 67.

In the reflective liquid crystal display device 1 having the above-described structure, the reflective plate 40 is formed of a metal material with good reflection to reflect light incident from the outside to express an image. Therefore, the power consumption can be reduced and used for a long time.

In the conventional reflective liquid crystal display device 1 having such a configuration, the lambda / 4 phase difference film 72, the lambda / 2 phase difference film 74 and the polarizing plate 76 on the outer surface of the color filter substrate 61 It is provided.

However, in manufacturing the conventional reflective liquid crystal display device 1 having such a configuration, a gate wiring and an electrode (not shown) 15 and source and drain electrodes 27 and 29 and a data wiring 25 and an embossing structure are used. Since the third protective layer 45 / pixel electrode 50 having the second protective layer 33 / reflector 40 / drain contact hole 47 has to be formed, respectively, a total of seven mask processes are performed.

Therefore, since the process is complicated and a long manufacturing process has to proceed, the manufacturing cost is raising.

SUMMARY OF THE INVENTION The present invention has been made to solve the problems described above, and in the manufacture of an array substrate for a reflective transverse electric field mode liquid crystal display device, the number of mask processes can be reduced to shorten the process and the manufacturing cost can be reduced. It is an object of the present invention to provide an array substrate for a type transverse electric field mode liquid crystal display device and a manufacturing method thereof.

In order to achieve the above object, a reflective liquid crystal display device includes: a liquid crystal panel including first and second substrates and a liquid crystal layer interposed between the two substrates; A reflection plate comprising a multi-layered thin film having different helical pitches on an outer surface of the first substrate of the liquid crystal panel, or a multi-layered thin film stacked alternately with two different materials; A λ / 2 retardation film provided on an outer surface of the second substrate of the liquid crystal panel; It includes a polarizing plate provided on the lambda / 2 phase difference film outer surface.

The multi-layered thin film having a different helical pitch is made of titanium oxide, and the multi-layered thin film of titanium oxide includes: a first titanium oxide film having a three-layer structure, each layer having a helical pitch of 275 nm; A second titanium oxide film having a 5.4 layer structure, each layer having a helical pitch of 330 nm; Each layer is composed of 4.5 layers of third titanium oxide films having a helical pitch of 420 nm, and the 5.4 layer is composed of five layers having a thickness of 330 nm and a layer having a thickness of 2/5 of 330 nm, The 4.5 layer is characterized by consisting of four layers having a thickness of 420nm and a layer having a half thickness of 420nm.

In addition, the multi-layered thin film of the two different materials are sequentially alternating is made of titanium oxide and silicon oxide, and the two different materials are sequentially alternating and the laminated multilayer thin film is five different thicknesses It is characterized by forming a nine-layer structure by consisting of a titanium oxide film having and a silicon oxide film having four different thicknesses.

A gate wiring and a data wiring formed on an inner surface of the first substrate via a gate insulating film and crossing the lower and upper portions thereof to define a pixel region; A thin film transistor connected to the gate line and the data line in the pixel area; A pixel electrode formed in contact with the drain electrode of the thin film transistor; A black matrix formed on an inner surface of the second substrate corresponding to the gate wiring and the data wiring; A color filter layer in which red, green, and blue color filter patterns having a boundary thereof are sequentially repeated on the black matrix; It includes a transparent common electrode formed covering the color filter layer.

A gate wiring and a data wiring formed on an inner surface of the first substrate via a gate insulating film and crossing the lower and upper portions thereof to define a pixel region; A common wiring formed in parallel with the gate wiring; A thin film transistor connected to the gate line and the data line in the pixel area; A plurality of pixel electrodes having a bar shape in contact with the drain electrode of the thin film transistor in the pixel region; A plurality of bar electrodes in contact with the common wiring in the pixel area, the bar electrodes being alternately formed with the plurality of bar electrodes; A black matrix formed on an inner surface of the second substrate corresponding to the gate wiring and the data wiring; A color filter layer in which red, green, and blue color filter patterns having a boundary thereof are sequentially repeated on the black matrix; It includes an overcoat layer formed covering the color filter layer.

A method of manufacturing a reflective liquid crystal display device according to an embodiment of the present invention includes: forming a liquid crystal panel including first and second substrates and a liquid crystal layer interposed between the two substrates; Form a reflective plate having a multi-layered thin film structure having a different helical pitch on the entire outer surface of the first substrate of the liquid crystal panel, or form a reflective plate having a multi-layered thin film structure in which two different materials are sequentially stacked. Making a step; Attaching a λ / 2 retardation film on an outer surface of the second substrate of the liquid crystal panel; Attaching a polarizing plate to the λ / 2 retardation film outer surface.

Forming a reflective plate having a multi-layered thin film structure having a helical pitch on the entire outer surface of the first substrate of the liquid crystal panel, the outer surface of the first substrate in the chamber of the chemical vapor deposition equipment Positioning on the stage to be exposed; Injecting a reaction gas into the chamber in a vacuum atmosphere; Rotating the stage in one direction and depositing titanium oxide on an outer surface of the first substrate; Depositing the titanium oxide at different rotational speeds of the stage.

In this case, the forming of the reflector having a multi-layered thin film structure having different helical pitches on the entire outer surface of the first substrate may include depositing the titanium oxide with the stage having a first rotational speed, thereby allowing each layer to be 275 nm. Forming a first titanium oxide film of a three-layer structure having a helical pitch of; Making the stage have a second rotational speed to form a second titanium oxide film having a 5.4 layer structure with each layer having a helical pitch of 330 nm; Subjecting the stage to a third rotational speed to form a 4.5 layer of third titanium oxide film having a helical pitch of 420 nm, with each layer having five layers having a thickness of 330 nm and a thickness of 330 nm. The layer has a thickness of 2/5, and the 4.5 layer is characterized by forming four layers having a thickness of 420 nm and a layer having a half thickness of 420 nm.

In addition, the forming of the reflector having a multilayer thin film structure in which two different materials are alternately stacked on the front surface of the outer surface of the first substrate may include forming the liquid crystal panel in the chamber of the chemical vapor deposition apparatus. Positioning on the stage such that the outer surface of the substrate is exposed; Vacuuming the interior of the chamber; (A) forming a titanium oxide film by subjecting the inside of the chamber in the vacuum state to a first reaction gas atmosphere and then performing chemical vapor deposition; (B) forming a silicon oxide film by performing chemical vapor deposition after changing to a second reaction gas atmosphere in the chamber in the vacuum state, and oxidizing by repeating steps (a) and (b). It is characterized by forming a reflecting plate in which a titanium film and a silicon oxide film are alternated.

An array substrate for a reflective transverse electric field mode liquid crystal display according to an exemplary embodiment of the present invention forms a titanium oxide (TiO ₂ ) thin film having a helical structure on the rear surface of the array substrate without a masking process, thereby using the reflector plate patterning and By omitting the mask process for forming the embossed structure, respectively, there is an effect of simplifying the manufacturing process and reducing the manufacturing cost by reducing the mask process.

1 is a cross-sectional view of one pixel area of a general reflective liquid crystal display device;
2 is a cross-sectional view of a portion of a display area of a reflective liquid crystal display according to an exemplary embodiment of the present invention.
3 is a cross-sectional view showing a reflector plate structure in a reflective liquid crystal display device according to another embodiment of the present invention;
4A to 4J are cross-sectional views illustrating manufacturing steps of a reflective liquid crystal display device according to an exemplary embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention;

2 is a cross-sectional view of a portion of a display area of a reflective liquid crystal display according to an exemplary embodiment of the present invention.

Reflective liquid crystal display device 101 according to an embodiment of the present invention is an array substrate 110 and a color filter substrate 160 and the two substrates 110 having a reflective plate 150 of a thin film structure of a multi-layer structure The liquid crystal layer 180 interposed between the layers 160 and the λ / 2 phase difference film 170 and the polarizing plate 172 provided on the outer surface of the color filter substrate are formed.

First, in the array substrate 110, the inner surface facing the color filter substrate 160 intersects each other via the gate insulating layer 118 to define the pixel region P, and the gate and data wirings (not shown). And 125 are formed, and the gate electrode 115, the gate insulating layer 118, the active layer 120a and the ohmic contact layer 120b are formed near the intersection point of the two wires (not shown). A thin film transistor Tr including the configured semiconductor layer 120 and the source and drain electrodes 127 and 129 is formed.

In this case, although not shown in the drawing, the common wiring may be further formed in parallel with the gate wiring in the same layer on which the gate wiring is formed. In this case, the common wiring forms a first storage electrode by itself, and the drain electrode 129 constituting the thin film transistor Tr extends to a portion where the common wiring is formed so as to overlap the common wiring. The first and second storage electrodes which form two storage electrodes and overlap each other with the gate insulating layer 118 interposed therebetween form a storage capacitor.

When the common line is not formed, the pixel electrode 140 is formed to overlap the front gate line (not shown) to form a storage capacitor (not shown).

Next, a passivation layer 132 made of an inorganic insulating material or an organic insulating material is formed on the entire display area over the thin film transistor Tr. In the drawing, the protective layer 132 is formed of an organic insulating material and has a flat surface. When the protective layer 132 is formed of an organic insulating material, the protective layer 132 is referred to as a first protective layer 132. A second protective layer (not shown) made of an inorganic insulating material may be further formed below the first protective layer 132.

In addition, the protective layer 132 is provided with a drain contact hole 135 that exposes the drain electrode 129 of the thin film transistor Tr.

In addition, each pixel region P is disposed on the passivation layer 132 to contact the drain electrode 129 through the drain contact hole 135 and includes a plate-shaped pixel electrode 140 made of a transparent conductive material. have.

On the other hand, the most characteristic in the embodiment of the present invention, the outer surface of the array substrate 110 is provided with a thin film of a multi-layer structure consisting of titanium oxide (TiO ₂ ) to form a helical structure on the front surface reflector 150 Is fulfilling. In this case, the multi-layered thin film may be made of only titanium oxide (TiO ₂ ), or as shown in FIG. 3, in the form of alternately stacked titanium oxide (TiO ₂ ) and silicon oxide (SiO ₂ ). It can also be done.

Referring to FIG. 2, the reflector 150 having a helical structure, particularly a left circle helical structure, made of titanium oxide (TiO ₂ ) has a performance of reflecting 100% of the left circle polarization due to the left circle helical structure.

In particular, in order to form a thin film of a multi-layer structure, when the titanium oxide (TiO ₂ ) is deposited, its thickness and helical pitch are adjusted to reflect light of red, green, and blue wavelength bands, thereby finally reflecting full white light. It is characterized in that it can serve as a reflecting plate 150 to.

For example, when a titanium oxide (TiO ₂ ) thin film having a helical pitch of 275 nm forms a three-layer structure, almost 100% of light having a wavelength of 370 nm (blue light) is reflected and titanium oxide having a helical pitch of 330 nm (TiO ₂₎ ) When the thin film has a structure of 5.4 layers (five layers have a helical structure of 330 nm, and 0.4 layers have a thickness of about 2/5 of each layer), the light having a wavelength of 550 nm (green light) is almost 100. 4.5 layers of titanium oxide (TiO ₂ ) thin films having a helical pitch of 420 nm (four layers each have a helical structure of 420 nm, and 0.5 layers are formed to have a thickness of about 1/2 of each layer) This results in nearly 100% reflection of 680nm wavelength light (red light).

Therefore, when the multilayer titanium oxide (TiO ₂ ) thin film is formed to have a structure in which all three layers, 5.4 layers, and 4.5 layers having different helical pitches described above are formed, a reflection layer reflecting light of full white is almost 100%. do.

The method of forming a titanium oxide (TiO ₂ ) thin film having a multi-layer structure having different helical pitches will be described in detail later through a manufacturing method.

On the other hand, as shown in Fig. 3 (cross-sectional view showing the reflecting plate structure in the reflective liquid crystal display device according to an embodiment of the present invention), a titanium oxide (TiO ₂ ) film 150a and silicon oxide (SiO ₂ ) When the film 150b forms the reflector plate 150 made of a thin film having an alternating layer structure, it is not necessary to have a helical structure of the titanium oxide film 150a, and the full white film is used based on the total reflection principle using the thickness difference. Can reflect light.

It was found that the reflective plate 150 formed of the silicon oxide film 150b and the titanium oxide film 150a for full white reflection, which is found experimentally, has a nine-layer structure. In this case, since the multilayer thin film constituting the reflective plate 150 forms an odd layer, the uppermost layer and the lowermost layer are formed of a titanium oxide film 150a.

Table 1 shows the thickness of each thin film in a reflective plate composed of a multi-layer thin film as a heterogeneous material for full white reflection. At this time, the thickness shown in Table 1 shows an example, the order may be changed, it is obvious that it may be variously changed.

matter Thickness TiO ₂ 40 SiO ₂ 631 TiO ₂ 580 SiO ₂ 1379 TiO ₂ 618 SiO ₂ 1064 TiO ₂ 299 SiO ₂ 913 TiO ₂ 176 Sum 5700

Referring to FIG. 2, an inner surface of the color filter substrate 160 corresponding to the array substrate 110 having such a configuration may have a boundary, that is, a gate and a data line (not shown). 125 and a black matrix 163 is formed corresponding to the thin film transistor Tr and cover the black matrix 163 and are sequentially repeated red and green in correspondence to each pixel region P. FIG. The color filter layer 165 formed of the blue color filter patterns R, G, and the like is formed.

In this case, the color filter layer 165 may be patterned and removed to correspond to the central portion of each pixel area P, so that a transmission hole (not shown) may be provided. The configuration of the transmission holes (not shown) in each pixel area P is for improving reflection luminance and may be omitted. In the drawings, the through hole is omitted as an example.

Next, a common electrode 167 covering the black matrix 163 and the color filter layer 165 and made of a transparent conductive material is formed on the entire surface.

The liquid crystal layer 180 is interposed between the array substrate 110 and the color filter substrate 160 having such a configuration. Although not shown in the drawing, the array substrate 110 may be used to maintain a uniform thickness of the liquid crystal layer 180. A columnar patterned spacer (not shown) having a uniform height between the 110 and the color filter substrate 160 has a predetermined interval, and overlaps the gate line (not shown) or the data line 125. Formed.

In addition, a seal pattern (not shown) is further formed along the edges of the color filter substrate 160 and the array substrate 110 in a form of capturing the liquid crystal layer 180 such that the two substrates 160 and 110 are bonded to each other. The liquid crystal panel 102 is constituted by maintaining the closed state.

Meanwhile, in the liquid crystal panel 102 for a reflective liquid crystal display device according to an exemplary embodiment of the present invention, a plate-shaped pixel electrode 140 is formed in each pixel region P on an inner side surface of the array substrate 110. For example, the transparent common electrode 167 is formed over the entire display area of the color filter substrate 160.

However, in the liquid crystal panel for a reflective liquid crystal display device according to another exemplary embodiment of the present invention, the pixel electrode 140 formed on the array substrate 110 has a bar shape in each pixel region P. FIG. A plurality of bars may be spaced apart from each other at regular intervals, and may be in contact with the common wiring (not shown) and the common contact hole (not shown), alternate with the bar-shaped pixel electrodes, and have a plurality of bars. In this case, the transparent common electrode 167 disposed on the inner front surface of the color filter substrate 160 is omitted, and instead, an overcoat layer (not shown) may be used to protect the color filter layer 165. May be further configured.

 Next, the λ / 2 retardation film 172 and the polarizing plate 174 are attached to the outer surface of the color filter substrate 160 of the liquid crystal panel 102 having the above-described configuration, thereby reflecting liquid crystal according to an embodiment of the present invention. The display apparatus 101 is completed.

In the reflective liquid crystal display device 101 according to the exemplary embodiment of the present invention, since the protective layer having the embossing structure and the patterned reflector on the inner surface of the array substrate 110 inside the liquid crystal panel 102 can be omitted. Since the mask process for forming these components can be omitted, the manufacturing process can be simplified and the manufacturing cost can be reduced.

On the other hand, Table 2 shows the change in the state of the light when implementing the black and white of the reflective liquid crystal display according to the embodiment of the present invention operating in the normally black mode.

Polarizer Phase film Liquid crystal layer Reflector Liquid crystal layer Phase film Polarizer black ↔ ↕ ↕ × White ↔ ↕ Left circular polarization Left circular polarization ↕ ↔ ↔

In the reflective liquid crystal display according to the exemplary embodiment of the present invention, when no voltage is applied to the pixel electrode and the common electrode, black is displayed. When light enters the polarizing plate from the outside, the polarizing plate is transmitted through the polarizing plate to form linearly polarized light in the first direction, and the light polarized in the first direction passes through the λ / 2 retardation film to pass through the first direction. Light linearly polarized in a second direction perpendicular to the direction of the light.

When the light linearly polarized in the second direction through the λ / 4 retardation film passes through the liquid crystal layer, no voltage is applied to the liquid crystal layer, thereby maintaining the polarized state in the second direction.

In addition, the light linearly polarized in the second direction is incident on the reflecting plate having the multilayer thin film structure, and the light incident on the reflecting plate made of the multilayer thin film is light linearly polarized in the second direction and thus is absorbed without being reflected. Will display black.

In the reflective liquid crystal display according to the exemplary embodiment of the present invention, white is displayed when a voltage is applied to the pixel electrode and the common electrode. When light enters the polarizing plate from the outside, the polarizing plate passes through the polarizing plate so that the light is linearly polarized in the first direction, and the light polarized in the first direction passes through the λ / 2 retardation film to pass the λ / 2 phase difference. By the film characteristic, light becomes a polarizing plate in a second direction perpendicular to the first direction.

Subsequently, light linearly polarized in the second direction through the λ / 2 retardation film passes through the liquid crystal layer to which an electric field is applied, so that the liquid crystal layer to which the electric field is applied forms a reflective liquid crystal display device. In general, since the operation is performed so as to have a λ / 4 phase difference, the left circularly polarized light is reflected to this.

The left circularly polarized light passing through the liquid crystal layer is incident on the reflecting plate, and according to the characteristics of the reflecting plate according to the present invention, the left circularly polarized light is reflected by 100% so that the light reflected by the reflecting plate maintains the left circularly polarized state. It is incident on the liquid crystal layer.

When the left circularly polarized light is incident on the liquid crystal layer having a λ / 4 phase difference by applying an electric field, a phase difference of λ / 4 is generated to form a linearly polarized state in the second direction, and the light linearly polarized in the second direction. The light is linearly polarized in the first direction perpendicular to the second direction by passing through the λ / 2 retardation film, and the light linearly polarized in the first direction transmits only the linearly polarized light in the first direction. White is displayed by passing through the first polarizing plate.

Hereinafter, a method of manufacturing a reflective liquid crystal display device according to the present invention having the above-described configuration will be described.

4A to 4J are cross-sectional views illustrating manufacturing steps of a reflective liquid crystal display device according to an exemplary embodiment of the present invention. In this case, the reflective liquid crystal display device according to the exemplary embodiment of the present invention has a characteristic part of the present invention on the array substrate. For convenience of description, an area in which the thin film transistor Tr is formed in each pixel area P is defined as a switching area TrA.

First, as shown in FIG. 3A, a first metal material having low resistance is deposited on the first transparent insulating substrate 110 to form a first metal layer (not shown), and then the photoresist is applied thereto. And a gate process (not shown) extending in one direction by patterning the first metal layer (not shown) by performing a mask process including exposure using an exposure mask, development of photoresist, etching and stripping. At the same time, the gate electrode 115 branched from the gate line (not shown) is formed in the switching region TrA in each pixel region P.

At the same time, although not shown in the drawing, common wirings (not shown) are formed to be spaced apart from the gate wiring (not shown) by a predetermined interval. In this case, the common wiring (not shown) may be omitted. Next, as illustrated in FIG. 3B, silicon oxide (SiO ₂ ) or silicon nitride (SiNx), which is an inorganic insulating material, is disposed on the entire surface of the gate wiring (not shown), the gate electrode 115, and the common wiring (not shown). The vapor deposition is performed to form the gate insulating film 118.

Subsequently, pure amorphous silicon, impurity amorphous silicon, and a second metal material are continuously deposited on the gate insulating layer 118 to form a pure amorphous silicon layer (not shown), an impurity amorphous silicon layer (not shown), and a second metal layer (not shown). ).

Next, to form a photoresist layer (not shown) by applying a photoresist on the second metal layer (not shown), a transmission region for transmitting 100% of the irradiated light, a blocking region for blocking 100% of the irradiated light and After placing an exposure mask (not shown) including a semi-transmissive region that can adjust the transmission amount of irradiated light between 10% and 90% over the photoresist layer (not shown), and then diffraction exposure through the exposure mask or Halftone exposure is performed.

Subsequently, when the exposed photoresist layer (not shown) is developed, a first photoresist pattern 190a having a thick first thickness remains in a region corresponding to the transmission region of the exposure mask (not shown), and the exposure is performed. A second photoresist pattern 190b having a second thickness thinner than the first thickness remains in a portion corresponding to the semi-transmissive region of the mask (not shown), and corresponds to the blocking region of the exposure mask (not shown). For the portion, all of the photoresist layer (not shown) is removed during development to expose the lower second metal layer (not shown).

Next, a second metal layer (not shown) exposed to the outside of the first and second photoresist patterns 190a and 190b, an impurity amorphous silicon layer (not shown), and a pure amorphous silicon layer (not shown) below By sequentially etching, a data line 125 is formed on the gate insulating layer 118 to cross the gate line (not shown) to define each pixel area P. Referring to FIG. At the same time, in the switching region TrA, a source drain pattern 126 connected to the data line 125 and an impurity amorphous silicon pattern 119 and an active layer 120a of pure amorphous silicon are formed under the source drain pattern 126.

Next, as shown in FIG. 4C, ashing is performed on the first substrate 110 on which the data line 125 and the source drain pattern 126 are formed, thereby forming a second photoresist having the second thickness. By removing the pattern 190b of FIG. 4B, the source drain pattern 126 below is exposed. At this time, the first photoresist pattern 190a of the first thickness also becomes thin due to ashing, but has a predetermined thickness and still remains on the first substrate 110.

Next, as shown in FIG. 4D, the source drain pattern (126 of FIG. 4C) and the impurity amorphous silicon pattern (119 of FIG. 4C) exposed by removing the second photoresist pattern (190b of FIG. 4B) are removed. ) Are sequentially etched and removed to form source and drain electrodes 127 and 129 spaced apart from each other and an ohmic contact layer 120b spaced apart from each other in the switching region TrA. In this case, the active layer 120a made of pure amorphous silicon is exposed between the source and drain electrodes 127 and 129, and the active layer 120a and the ohmic contact layer 120b form the semiconductor layer 120. In addition, the gate electrode 115, the gate insulating layer 118, and the source and drain electrodes 127 and 129 spaced apart from each other and sequentially stacked on the switching region TrA may form a thin film transistor Tr. Achieve.

Subsequently, the data line 125 and the source and drain electrodes 127 and 129 are exposed by stripping to remove the first photoresist pattern 190a of FIG. 4C.

Next, as illustrated in FIG. 4E, silicon oxide (SiO ₂ ) or silicon nitride (SiNx), which is an inorganic insulating material, is deposited on the data line 125 and the source and drain electrodes 127 and 129 over the entire surface. A protective layer 132 is formed by coating benzocyclobutene (BCB) or photo acryl, which is an organic insulating material, and then patterning the protective layer 132 to form a drain electrode of the thin film transistor Tr ( A drain contact hole 135 exposing the 129 is formed.

Next, as shown in FIG. 4F, indium-tin-oxide (ITO) or indium-zinc- which is a transparent conductive material over the protective layer 132 having the drain contact hole 135 exposing the drain electrode 129. An oxide IZO is deposited on the entire surface and patterned to form a pixel electrode 140 in contact with the drain electrode 129 through the drain contact hole 135 for each pixel region P. Referring to FIG.

At this time, in the exemplary embodiment of the present invention, although the pixel electrode 140 has a plate shape for each pixel region P and is shown as an example, the pixel electrode 140 depends on the driving mode of the liquid crystal of the liquid crystal display device. May be formed to have a plurality of bar shapes spaced apart from each other in the pixel area P. In this case, the plurality of bar electrodes are connected to the common wiring (not shown). A plurality of bar-shaped common electrodes may be formed in an alternating form and spaced apart from each other.

Next, as illustrated in FIG. 4G, a metal material including chromium (Cr) or the like is deposited on the entire surface of the transparent second insulating substrate 160, or a resin or black resin including a carbon material is coated. After coating on the entire surface, it is patterned using a mask to form a black matrix 163 in the form of a lattice having a plurality of openings.

Next, one of red, green, and blue, for example, red resists is applied to the entire surface of the black matrix 163 to form a red color filter layer (not shown). Exposure is performed through an exposure mask (not shown) having an area, and development is performed to form a red color filter pattern R which fills the opening and is spaced apart from each other.

Thereafter, the process proceeds in the same manner as the method of forming the red color filter pattern R, and the green and blue color filter patterns G and B are sequentially formed in the opening between the black matrix 163 on the second substrate 160. By forming in a repeating form, the color filter layer 165 having a form in which red, green, and blue color filter patterns R, G, and B are sequentially and periodically repeated is formed.

Thereafter, an indium tin oxide (ITO) or an indium zinc oxide (IZO), which is a transparent conductive material, is deposited on the color filter layer 165 to form a transparent common electrode 167 on the entire surface of the second substrate 160. Thus, the color filter substrate 160 for the reflective liquid crystal display device according to the embodiment of the present invention is completed.

Meanwhile, when a plurality of bar-shaped pixel electrodes and a common electrode are formed on the array substrate 110 (in FIG. 4F), the transparent common electrode 167 formed on the entire surface of the second substrate 160 is omitted. Instead, an overcoat layer (not shown) may be further formed as an organic insulating material to protect the color filter layer 165.

Meanwhile, in the present invention, the color filter substrate 160 is formed after the array substrate 110 is formed as an example. However, the order in which the two substrates 110 and 160 are formed may be changed and may be simultaneously formed. It may be.

Subsequently, as shown in FIG. 4H, the array substrate 110 and the color filter substrate 160 are positioned to face the pixel electrode 140 and the color filter layer 165, and then interpose the liquid crystal layer 180. Then, a seal pattern (not shown) having adhesive properties is formed along the edges of the two substrates 110 and 160, and the liquid crystal panel 102 is formed by bonding.

Next, as illustrated in FIG. 4I, the outer surface of the array substrate 110 is exposed on the stage 199 inside the chamber 197 of the chemical vapor deposition apparatus. Position it as possible.

Thereafter, the inside of the chamber 197 is a vacuum atmosphere, and the array substrate 110 is formed by rotating the stage 199 in one direction and performing chemical vapor deposition in a state of making a reaction gas atmosphere for titanium oxide deposition. A titanium oxide film having a first thickness having a first helical pitch is formed on the outer surface of the film.

Thereafter, by appropriately adjusting the rotational speed and the deposition time of the stage 199, a titanium oxide film having a second thickness having a second helical pitch is formed over the titanium oxide film having the first thickness.

By appropriately adjusting the rotational speed and deposition time of the stage 199 in this manner, a first titanium oxide film 151a having a three-layer structure having a helical pitch of 275 nm, for example, is formed, and 330 nm of helical is respectively formed thereon. After forming the second titanium oxide film 151b having a 5.4 layer structure having a pit, successively, the third titanium oxide film 151c having a helical pitch of 420 nm was formed on the upper portion of the 5.4-layer structure. By forming the reflective plate 150 having a triple layer structure having a helical pitch, the liquid crystal panel 102 for a reflective liquid crystal display device according to an exemplary embodiment of the present invention is completed.

Meanwhile, in another embodiment, the gas atmosphere in the chamber of the chemical vapor deposition apparatus is continuously deposited while alternately arranging the first gas atmosphere in which the titanium oxide film is formed and the second gas atmosphere in which the silicon oxide film is formed. Reflective liquid crystal display device according to another embodiment of the present invention by forming a reflector plate 150 made of a thin film of a 9-layer structure in which the titanium oxide film 150a and the silicon oxide film 150b shown in Fig. 3 are alternately deposited. The liquid crystal panel for this can be completed.

Next, as illustrated in FIG. 4J, the λ / 2 retardation film 170 is attached to an outer surface of the color filter substrate 160 of the liquid crystal panel 102 on which the reflective plate 150 having the multilayer thin film structure is formed. The liquid crystal display device 101 according to the exemplary embodiment of the present invention is completed by attaching the polarizing plate 172 to the outer surface of the λ / 2 retardation film 170.

101: reflection type liquid crystal display device 102: liquid crystal panel
110 array substrate 115 gate electrode
118 gate insulating film 120 semiconductor layer
120a: active layer 120b: ohmic contact layer
125: data wiring 127: source electrode
129: drain electrode 132: protective layer
135: drain contact hole 150: reflector
151a: first titanium oxide film 151b: second titanium oxide film
151c: Third Titanium Oxide Film 160: Color Filter Substrate
163: black matrix 165: color filter layer
167: common electrode 170: lambda / 2 phase difference film
172: polarizing plate 180: liquid crystal layer
P: Pixel Area Tr: Thin Film Transistor
TrA: switching area

Claims (11)

A liquid crystal panel comprising first and second substrates and a liquid crystal layer interposed between the two substrates;
A reflection plate comprising a multi-layered thin film having different helical pitches on an outer surface of the first substrate of the liquid crystal panel, or a multi-layered thin film stacked alternately with two different materials;
A λ / 2 retardation film provided on an outer surface of the second substrate of the liquid crystal panel;
Polarizing plate provided on the outer side of the λ / 2 retardation film
Reflective liquid crystal display device comprising a. The method of claim 1,
And the multilayer thin film having different helical pitches is made of titanium oxide.
The method of claim 2,
The multilayer thin film made of titanium oxide,
A first titanium oxide film having a three-layer structure, each layer having a helical pitch of 275 nm;
A second titanium oxide film having a 5.4 layer structure, each layer having a helical pitch of 330 nm;
4.5-layers of third titanium oxide film, each layer having a helical pitch of 420 nm
The 5.4 layer consists of five layers having a thickness of 330 nm and a layer having a thickness of 2/5 of 330 nm, and the 4.5 layer has four layers having a thickness of 420 nm and 1/2 of 420 nm. Reflective liquid crystal display device characterized in that composed of a layer having a thickness.
The method of claim 1,
2. The reflective liquid crystal display device of claim 2, wherein the multilayered thin film is formed of titanium oxide and silicon oxide.
The method of claim 4, wherein
The multilayer thin film in which the two different materials are sequentially alternately stacked is composed of a titanium oxide film having five different thicknesses and a silicon oxide film having four different thicknesses to form a nine-layered structure. LCD display device.
The method according to claim 2 or 4,
A gate wiring and a data wiring formed on the inner side of the first substrate with a gate insulating film intersecting with each other below and defining a pixel region therebetween;
A thin film transistor connected to the gate line and the data line in the pixel area;
A pixel electrode formed in contact with the drain electrode of the thin film transistor;
A black matrix formed on an inner surface of the second substrate corresponding to the gate wiring and the data wiring;
A color filter layer in which red, green, and blue color filter patterns having a boundary thereof are sequentially repeated on the black matrix;
Transparent common electrode formed covering the color filter layer
Reflective liquid crystal display device comprising a.
The method according to claim 2 or 4,
A gate wiring and a data wiring formed on the inner side of the first substrate with a gate insulating film intersecting with each other below and defining a pixel region therebetween;
A common wiring formed in parallel with the gate wiring;
A thin film transistor connected to the gate line and the data line in the pixel area;
A plurality of pixel electrodes having a bar shape in contact with the drain electrode of the thin film transistor in the pixel region;
A plurality of bar electrodes in contact with the common wiring in the pixel area, the bar electrodes being alternately formed with the plurality of bar electrodes;
A black matrix formed on an inner surface of the second substrate corresponding to the gate wiring and the data wiring;
A color filter layer in which red, green, and blue color filter patterns having a boundary thereof are sequentially repeated on the black matrix;
An overcoat layer covering the color filter layer
Reflective liquid crystal display device comprising a.
Forming a liquid crystal panel comprising first and second substrates and a liquid crystal layer interposed between the two substrates;
Form a reflective plate having a multi-layered thin film structure having a different helical pitch on the entire outer surface of the first substrate of the liquid crystal panel, or form a reflective plate having a multi-layered thin film structure in which two different materials are sequentially stacked. Making a step;
Attaching a λ / 2 retardation film on an outer surface of the second substrate of the liquid crystal panel;
Attaching a polarizing plate to the λ / 2 retardation film outer surface
Method of manufacturing a reflective liquid crystal display device comprising a.
The method of claim 8,
Forming a reflective plate having a multi-layered thin film structure having a helical pitch on the entire outer surface of the first substrate of the liquid crystal panel,
Positioning the liquid crystal panel on a stage such that an outer surface of the first substrate is exposed in a chamber of chemical vapor deposition equipment;
Injecting a reaction gas into the chamber in a vacuum atmosphere;
Rotating the stage in one direction and depositing titanium oxide on an outer surface of the first substrate;
Depositing the titanium oxide by varying the rotational speed of the stage
Method of manufacturing a reflective liquid crystal display device comprising a.
The method of claim 9,
Forming a reflective plate having a multi-layered thin film structure having a different helical pitch on the entire outer surface of the first substrate,
Depositing the titanium oxide with the stage having a first rotational speed to form a first titanium oxide film having a three-layer structure, each layer having a helical pitch of 275 nm;
Making the stage have a second rotational speed to form a second titanium oxide film having a 5.4 layer structure with each layer having a helical pitch of 330 nm;
Making said stage have a third rotational speed to form a 4.5 layer of third titanium oxide film, each layer having a helical pitch of 420 nm;
The 5.4 layer comprises five layers having a thickness of 330 nm and a layer having a thickness of 2/5 of 330 nm, and the 4.5 layers have four layers having a thickness of 420 nm and a half thickness of 420 nm. A method of manufacturing a reflective liquid crystal display device, characterized by forming a layer.
The method of claim 9,
Forming a reflective plate having a multi-layered thin film structure in which two different materials are sequentially stacked on the entire outer surface of the first substrate,
Positioning the liquid crystal panel on a stage such that an outer surface of the first substrate is exposed in a chamber of chemical vapor deposition equipment;
Vacuuming the interior of the chamber;
(A) forming a titanium oxide film by subjecting the inside of the chamber in the vacuum state to a first reaction gas atmosphere and then performing chemical vapor deposition;
(B) forming a silicon oxide film by performing chemical vapor deposition after changing to a second reaction gas atmosphere in the chamber in the vacuum state
And repeating the steps (a) and (b) to form a reflecting plate in which the titanium oxide film and the silicon oxide film are alternately formed.

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