KR20120055323A - Method for etching glass substrate and glass substrate - Google Patents
Method for etching glass substrate and glass substrate Download PDFInfo
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- KR20120055323A KR20120055323A KR1020100117005A KR20100117005A KR20120055323A KR 20120055323 A KR20120055323 A KR 20120055323A KR 1020100117005 A KR1020100117005 A KR 1020100117005A KR 20100117005 A KR20100117005 A KR 20100117005A KR 20120055323 A KR20120055323 A KR 20120055323A
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
- C03C21/001—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0075—Cleaning of glass
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0085—Drying; Dehydroxylation
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0095—Solution impregnating; Solution doping; Molecular stuffing, e.g. of porous glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
Abstract
Description
본 발명은 글라스기판 에칭 기술에 관한 것으로, 좀 더 상세하게는 글라스기판 에칭 속도를 높이면서 기판 표면에 다공성층(Porous Layer)을 균질하게 형성할 수 있는 글라스기판 에칭 기술에 관한 것이다. The present invention relates to a glass substrate etching technique, and more particularly, to a glass substrate etching technique capable of homogeneously forming a porous layer on the surface of the substrate while increasing the glass substrate etching rate.
최근 에너지 자원 부족과 환경오염의 대책으로 고효율 광전지 모듈의 개발이 대규모로 이루어지고 있다. 광전지 모듈은 광에너지, 예컨대 태양에너지를 직접 전기로 변환시키는 광 발전의 핵심소자이다. Recently, development of high efficiency photovoltaic modules has been carried out on a large scale in order to prevent energy resources and environmental pollution. Photovoltaic modules are key elements in photovoltaic power generation that directly convert light energy, such as solar energy, into electricity.
결정계 광전지 모듈(Photovoltaic Module)의 보호를 위한 목적으로 사용되는 커버기판과 박막형 광전지 모듈의 슈퍼스트레이트(Superstrate) 기판, 예컨대 글라스기판의 투과율이 광전지 모듈의 전체 효율에 영향을 준다. 종래에는, 글라스기판 표면에 습식 식각을 통해 다공성층(Porous Layer)을 형성하여 반사율을 최소화하여 투과율을 향상시키는 등 투과율 향상을 위하여 많은 개발이 진행되고 있었다. The transmittance of the cover substrate used for the protection of the crystalline photovoltaic module and the superstrate substrate of the thin film photovoltaic module, such as the glass substrate, affects the overall efficiency of the photovoltaic module. In the related art, many developments have been made to improve transmittance, such as forming a porous layer through wet etching on a glass substrate to minimize reflectance to improve transmittance.
그런데, 습식 식각을 통해 다공성층(Porous Layer)을 형성하는 경우 반응시간이 오래 걸리는 문제점이 있었다. 이러한 문제점을 해결하기 위해 반응온도를 약 60℃ 이상으로 올리는 경우, 반응시간이 줄어들기는 하지만 기판의 표면에 다공성층(Porous Layer)이 균일하지 못하고 얼룩이 발생하는 문제점이 있었다. However, when forming a porous layer through wet etching, there was a problem in that the reaction time is long. In order to solve this problem, if the reaction temperature is raised to about 60 ° C. or more, the reaction time is reduced, but the porous layer is not uniform on the surface of the substrate.
본 발명은 상기와 같은 배경에서 제안된 것으로, 본 발명의 목적은 글라스기판 에칭속도를 높이면서 기판 표면에 다공성층(Porous Layer)을 균질하게 형성할 수 있는 글라스기판 에칭방법을 제공하는 것이다. The present invention has been proposed in the above background, and an object of the present invention is to provide a glass substrate etching method capable of homogeneously forming a porous layer on the surface of the substrate while increasing the glass substrate etching rate.
상기와 같은 목적을 달성하기 위하여, 본 발명의 일 양상에 따른 글라스기판 에칭방법은, 칼륨(K) 이온을 포함하는 용액이 저장된 반응기에 글라스기판을 담그는 단계와, 반응기에서 글라스기판을 꺼내어 건조시킨 후, 에칭액이 저장된 에칭 배스(Etching Bath)에 담그는 단계를 포함한다.In order to achieve the above object, the glass substrate etching method according to an aspect of the present invention, the step of immersing the glass substrate in a reactor in which a solution containing potassium (K) ions are stored, and the glass substrate is removed from the reactor and dried Thereafter, the etching solution is immersed in a stored etching bath (Etching Bath).
본 발명의 다른 양상에 따른 글라스기판 에칭방법은, 글라스기판의 표면에 칼륨(K) 이온을 포함하는 슬러리를 바른 후 건조시킨 후, 건조된 글라스기판을 로(Furnace)에서 열처리하는 단계와, 열처리된 글라스기판을 에칭 배스(Etching Bath)에 담그는 단계를 포함한다.Glass substrate etching method according to another aspect of the present invention, after applying a slurry containing potassium (K) ions on the surface of the glass substrate and dried, heat-treating the dried glass substrate in a furnace (Furnace), and Immersing the glass substrate into an etching bath.
상기와 같이 구성된 본 발명의 글라스기판 에칭방법에 따르면, 칼륨(K) 이온을 포함하는 용액이 저장된 반응기에 글라스기판을 담그는 단계를 통해 글라스기판 표면에 K2O-SiO2 층을 만들고, 그 이후에 에칭 배스(Etching Bath)에 담그는 단계를 포함함으로써, 글라스기판 에칭속도를 높이면서 기판 표면에 다공성층(Porous Layer)을 균질하게 형성할 수 있는 유용한 효과가 있다. According to the etching method of the glass substrate of the present invention configured as described above, a K 2 O-SiO 2 layer is formed on the surface of the glass substrate by immersing the glass substrate in a reactor in which a solution containing potassium (K) ions is stored thereafter. By immersing in an etching bath (Etching Bath), there is a useful effect that can homogeneously form a porous layer on the surface of the substrate while increasing the glass substrate etching rate.
또한, 본 발명의 글라스기판 에칭방법에 따르면, 글라스기판의 표면에 칼륨(K) 이온을 포함하는 슬러리를 바른 후 건조시키고, 건조된 글라스기판을 로(Furnace)에서 열처리하는 단계를 통해 글라스기판 표면에 K2O-SiO2 층을 만들고, 그 이후에 에칭 배스(Etching Bath)에 담그는 단계를 포함함으로써, 글라스기판 에칭속도를 높이면서 기판 표면에 다공성층(Porous Layer)을 균질하게 형성할 수 있는 유용한 효과가 있다. In addition, according to the glass substrate etching method of the present invention, the surface of the glass substrate by applying a slurry containing potassium (K) ions to the surface of the glass substrate and dried, and heat-treated the dried glass substrate in a furnace (Furnace) surface By making a K 2 O-SiO 2 layer in and then immersing it in an etching bath, it is possible to homogeneously form a porous layer on the surface of the substrate while increasing the glass substrate etching rate It has a useful effect.
도 1 은 본 발명의 제1 실시예에 따른 글라스기판 에칭방법에 관한 흐름도,
도 2 는 본 발명의 제2 실시예에 따른 글라스기판 에칭방법에 관한 흐름도,
도 3a 는 본 발명의 글라스기판 에칭방법에 따라 제작된 글라스기판을 전자주사현미경(SEM, Scanning Electron Microscope)으로 확대한 해상도,
도 3b는 종래 글라스기판 에칭방법에 따라 제작된 글라스기판을 전자주사현미경(SEM, Scanning Electron Microscope)으로 확대한 해상도이다.1 is a flow chart related to a glass substrate etching method according to a first embodiment of the present invention;
2 is a flowchart of a glass substrate etching method according to a second embodiment of the present invention;
Figure 3a is a magnified resolution of the glass substrate produced by the glass substrate etching method of the present invention with an electron scanning microscope (SEM, Scanning Electron Microscope),
FIG. 3b is an enlarged resolution of a glass substrate manufactured according to a conventional glass substrate etching method using a scanning electron microscope (SEM).
이하, 첨부된 도면을 참조하여 전술한, 그리고 추가적인 양상을 기술되는 바람직한 실시예를 통하여 본 발명을 당업자가 용이하게 이해하고 재현할 수 있도록 상세히 설명하기로 한다.DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the present embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout.
본 발명에서 글라스기판은 산화규소(SiO2)을 주성분으로 하되, 선택적으로 산화알루미늄(Al2O3), 산화붕소(B2O3), 산화마그네슘(MgO), 산화칼슘(CaO), 산화스트론튬(SrO), 산화나트륨(Na2O), 산화칼륨(K2O)을 포함한다. 예를 들어, 소다라임 글라스기판의 경우, 산화규소(SiO2)가 전체 73%를 차지하고, 산화알루미늄(Al2O3)은 0.5%, 산화마그네슘(MgO)은 4%, 산화칼슘(CaO)은 9%, 산화나트륨(Na2O)은 13%, 산화칼륨(K2O)은 0.5%를 차지한다. In the present invention, the glass substrate has silicon oxide (SiO 2 ) as a main component, and optionally aluminum oxide (Al 2 O 3 ), boron oxide (B 2 O 3 ), magnesium oxide (MgO), calcium oxide (CaO), and oxidation Strontium (SrO), sodium oxide (Na 2 O), potassium oxide (K 2 O). For example, in the case of soda-lime glass substrate, silicon oxide (SiO 2 ) accounts for 73%, aluminum oxide (Al 2 O 3 ) 0.5%, magnesium oxide (MgO) 4%, calcium oxide (CaO) 9% of silver, 13% of sodium oxide (Na 2 O), and 0.5% of potassium oxide (K 2 O).
도 1 은 본 발명의 제1 실시예에 따른 글라스기판 에칭방법에 관한 흐름도이다. 1 is a flowchart of a glass substrate etching method according to a first embodiment of the present invention.
도시한 바와 같이, 에칭액이 저장된 에칭 배스(Etching Bath)를 준비(S111)하고, 글라스기판을 에칭하기 전에 세정(S112) 한다.As shown in the drawing, an etching bath in which an etching solution is stored is prepared (S111) and cleaned (S112) before etching the glass substrate.
일례로, 에칭액이 저장된 에칭 배스(Etching Bath)를 준비하는 단계 S111은 불화규산(H2SiF6) 용액에 규산(silicic acid)을 첨가하여 교반하고, 교반된 용액을 여과하고 붕산(boric acid)을 첨가한 후 가열하는 단계를 포함하여 구현될 수 있다. 글라스기판을 세정하는 단계 S112는 5% 불산(HF) 용액에 담그고, 글라스기판을 순수(DI Water)로 씻은 후 건조시키는 단계를 포함하여 구현될 수 있다. For example, preparing an etching bath (Etching Bath) in which the etching solution is stored is added by stirring silicic acid (silicic acid) to the solution of silicic acid fluoride (H 2 SiF 6 ), and filtered the stirred solution and boric acid (boric acid) It may be implemented including the step of heating after addition. Cleaning the glass substrate S112 may be implemented by immersing in a 5% hydrofluoric acid (HF) solution, washing the glass substrate with pure water (DI Water) and then drying.
이후, 칼륨(K) 이온을 포함하는 용액이 저장된 반응기에 글라스기판을 담그고(S113), 반응기에서 글라스기판을 꺼내어 건조시킨 후 단계 S111에 준비한 에칭 배스(Etching Bath)에 담근다(S114).Thereafter, the glass substrate is immersed in the reactor in which the solution containing potassium (K) ions is stored (S113), the glass substrate is removed from the reactor and dried, and then immersed in an etching bath (Etching Bath) prepared in step S111 (S114).
칼륨(K) 이온을 포함하는 용액이 저장된 반응기에 글라스기판을 담그는 단계 S113에서, 칼륨(K) 이온을 포함하는 용액은 질산칼륨(KNO3) 용액으로 구현될 수 있다. In step S113 of dipping a glass substrate in a reactor in which a solution containing potassium (K) ions is stored, the solution containing potassium (K) ions may be implemented as a potassium nitrate (KNO 3 ) solution.
종래 글라스기판 에칭방법은 불화규산(H2SiF6)을 이용하여 글라스기판에 포함된 나트륨(Na)과 칼슘(Ca)을 선택적으로 제거시켜 다공성층(Porous Layer)을 만들었다. In the conventional glass substrate etching method, sodium (Na) and calcium (Ca) contained in the glass substrate are selectively removed using silicate fluoride (H 2 SiF 6 ) to make a porous layer.
그러나, 본 발명에서는 칼륨(K)이 나트륨(Na) 보다 글라스기판 내의 이동성(Mobility)이 큰 것을 이용하여, 에칭 전에 칼륨(K) 이온을 포함하는 용액이 저장된 반응기에 글라스기판을 담그는 단계 S113를 통해 글라스기판 표면에 K2O-SiO2 층을 만들고, 그 이후에 에칭 배스(Etching Bath)에 담그는 단계 S114를 통해 글라스기판의 표면에 형성된 K2O-SiO2 층을 에칭함으로써, 에칭속도를 높이면서 기판 표면에 다공성층(Porous Layer)을 균질하게 형성할 수 있다.However, in the present invention, step S113 of dipping the glass substrate in a reactor in which a solution containing potassium (K) ions is stored before etching, using potassium (K) having greater mobility in the glass substrate than sodium (Na). by making the K 2 O-SiO 2 layer on the glass substrate surface, etching the K 2 O-SiO 2 layer formed on the surface of the glass substrate through the step S114 dipping the etching bath (etching bath) thereafter through, the etching rate While increasing, a porous layer may be uniformly formed on the surface of the substrate.
이후, 에칭 배스(Etching Bath)에서 글라스기판을 꺼내어 세정 및 건조시킨다(S115).Thereafter, the glass substrate is taken out from the etching bath and washed and dried (S115).
도 2 는 본 발명의 제2 실시예에 따른 글라스기판 에칭방법에 관한 흐름도이다.2 is a flowchart of a glass substrate etching method according to a second embodiment of the present invention.
도시한 바와 같이, 에칭액이 저장된 에칭 배스(Etching Bath)를 준비(S211)하고, 칼륨(K) 이온을 포함하는 슬러리를 준비(S212) 한다.As shown, an etching bath (Etching Bath) in which the etching solution is stored is prepared (S211), and a slurry containing potassium (K) ions is prepared (S212).
일례로, 에칭액이 저장된 에칭 배스(Etching Bath)를 준비하는 단계 S211은 불화규산(H2SiF6) 용액에 규산(silicic acid)을 첨가하여 교반하고, 교반된 용액을 여과하고 붕산(boric acid)을 첨가한 후 가열하는 단계를 포함하여 구현될 수 있다. 칼륨(K) 이온을 포함하는 슬러리를 준비하는 단계 S212에서, 슬러리는 질산칼륨(KNO3)을 포함하여 구현될 수 있다. For example, in step S211 of preparing an etching bath (Etching Bath) in which the etching solution is stored, silicic acid is added to the solution of silicic acid fluoride (H 2 SiF 6 ), and the stirred solution is filtered and boric acid is filtered. It may be implemented including the step of heating after addition. In step S212 of preparing a slurry including potassium (K) ions, the slurry may include potassium nitrate (KNO 3 ).
이후, 글라스기판을 에칭하기 전에 세정(S213) 한다. 글라스기판을 세정하는 단계 S213은 5% 불산(HF) 용액에 담그고, 글라스기판을 순수(DI Water)로 씻은 후 건조시키는 단계를 포함하여 구현될 수 있다. Thereafter, the glass substrate is cleaned (S213) before etching. Cleaning the glass substrate S213 may be implemented by immersing in a 5% hydrofluoric acid (HF) solution, washing the glass substrate with pure water (DI Water) and then drying.
이후, 세정한 글라스기판의 표면에 칼륨(K) 이온을 포함하는 슬러리를 바른 후 건조시키고(S214), 건조된 글라스기판을 로(Furnace)에서 열처리한다(S215). 이후, 열처리된 글라스기판을 에칭 배스(Etching Bath)에 담그고(S216), 에칭 배스(Etching Bath)에서 글라스기판을 꺼내어 세정 및 건조시킨다(S217).Thereafter, a slurry containing potassium (K) ions is applied to the surface of the cleaned glass substrate and dried (S214), and the dried glass substrate is heat-treated in a furnace (Furnace). Thereafter, the heat-treated glass substrate is immersed in an etching bath (S216), and the glass substrate is taken out of the etching bath (Etching Bath) to be cleaned and dried (S217).
글라스기판의 표면에 칼륨(K) 이온을 포함하는 슬러리를 바른 후 건조시키고, 건조된 글라스기판을 로(Furnace)에서 열처리하는 단계 S215를 통해 글라스기판 표면에 K2O-SiO2 층을 만들고, 그 이후에 에칭 배스(Etching Bath)에 담그는 단계 S216를 통해 글라스기판의 표면에 형성된 K2O-SiO2 층을 에칭함으로써, 글라스기판 에칭속도를 높이면서 기판 표면에 다공성층(Porous Layer)을 균질하게 형성할 수 있다.Applying a slurry containing potassium (K) ions to the surface of the glass substrate, and drying, and making a K 2 O-SiO 2 layer on the surface of the glass substrate through step S215 of heat-treating the dried glass substrate in a furnace (Furnace), Subsequently, by etching the K 2 O—SiO 2 layer formed on the surface of the glass substrate through step S216 immersed in an etching bath, the porous layer is homogeneous on the surface of the substrate while increasing the glass substrate etching rate. Can be formed.
도 3a 는 본 발명의 글라스기판 에칭방법에 따라 제작된 글라스기판을 전자주사현미경(SEM, Scanning Electron Microscope)으로 확대한 해상도이고, 도 3b는 종래 글라스기판 에칭방법에 따라 제작된 글라스기판을 전자주사현미경(SEM, Scanning Electron Microscope)으로 확대한 해상도이다.FIG. 3A is an enlarged resolution of a glass substrate manufactured by the glass substrate etching method of the present invention with an SEM (Scanning Electron Microscope), and FIG. 3B is an electron scanning of a glass substrate manufactured by a glass substrate etching method. The resolution is magnified with a microscope (SEM).
도 3a의 글라스기판은 본 발명의 글라스기판 에칭방법에 따라 표면에 충분한 깊이만큼 K2O-SiO2 층을 형성한 후 에칭한 글라스 기판이고, 도 3b의 글라스기판은 종래 글라스기판 에칭방법에 따라 에칭한 글라스 기판이다. The glass substrate of FIG. 3A is a glass substrate etched after forming a K 2 O—SiO 2 layer to a sufficient depth on the surface according to the glass substrate etching method of the present invention, and the glass substrate of FIG. 3B is a conventional glass substrate etching method. Etched glass substrate.
도 3a에서 글라스기판의 다공성층(Porous Layer)(31)은 K2O-SiO2 층이 형성된 글라스기판을 45분 동안 에칭 배스(Etching Bath)에서 에칭된 후 약 260nm 깊이만큼 형성되었고, 도 3b에서 글라스기판의 다공성층(Porous Layer)(32)은 45분 동안 에칭 배스(Etching Bath)에서 에칭된 후 약 100nm 깊이만큼 형성되었다.In FIG. 3A, the
통상적으로 습식 식각을 통해 글라스기판이 최대 투과율을 갖는 다공성층(Porous Layer)의 깊이는 약 100~110nm이다. 이에 본 발명의 글라스기판 에칭방법에 따르면 약 15분 정도 에칭 배스(Etching Bath)에서 에칭을 하면 약 100~110nm의 깊이를 갖는 다공성층(Porous Layer)을 만들 수 있다. Typically, the depth of the porous layer having the maximum transmittance of the glass substrate through wet etching is about 100 to 110 nm. Accordingly, according to the etching method of the glass substrate of the present invention, when the etching is performed in an etching bath for about 15 minutes, a porous layer having a depth of about 100 to 110 nm can be formed.
지금까지, 본 명세서에는 본 발명이 속하는 기술 분야에서 통상의 지식을 지닌 자가 본 발명을 용이하게 이해하고 재현할 수 있도록 도면에 도시한 실시예들을 참고로 설명되었으나 이는 예시적인 것에 불과하며, 당해 기술분야에 통상의 지식을 지닌 자라면 본 발명의 실시예들로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 것이다. 따라서 본 발명의 진정한 기술적 보호범위는 첨부된 특허청구범위에 의해서만 정해져야 할 것이다.Thus far, the present specification has been described with reference to the embodiments shown in the drawings so that those skilled in the art to which the present invention pertains can easily understand and reproduce the present invention. Those skilled in the art will understand that various modifications and equivalent other embodiments are possible from the embodiments of the present invention. Accordingly, the true scope of the present invention should be determined only by the appended claims.
Claims (12)
상기 K2O-SiO2 층에 다공성층(Porous Layer)을 형성하는 단계;
를 포함하는 것을 특징으로 하는 글라스기판 에칭방법.Forming a K 2 O—SiO 2 layer on the substrate; And
Forming a porous layer on the K 2 O—SiO 2 layer;
Glass substrate etching method comprising a.
상기 반응기에서 글라스기판을 꺼내어 건조시킨 후, 에칭액이 저장된 에칭 배스(Etching Bath)에 담그는 단계;
를 포함하는 것을 특징으로 하는 글라스기판 에칭방법.Dipping a glass substrate in a reactor in which a solution containing potassium (K) ions is stored; And
Removing the glass substrate from the reactor and drying the glass substrate, and then immersing the glass substrate in an etching bath in which the etching solution is stored;
Glass substrate etching method comprising a.
불화규산 용액에 규산(silicic acid)을 첨가하여 교반하고, 교반된 용액을 여과하고 붕산(boric acid)을 첨가한 후 가열하여 에칭액을 생성하는 단계;
를 포함하는 것을 특징으로 하는 글라스기판 에칭방법.The method of claim 2, wherein the glass substrate is removed from the reactor, dried, and then immersed in an etching bath in which the etching solution is stored.
Adding and stirring silicic acid to the fluorosilicate solution, filtering the stirred solution, adding boric acid, and heating to generate an etching solution;
Glass substrate etching method comprising a.
상기 칼륨(K) 이온을 포함하는 용액이 질산칼륨(KNO3) 용액인 것을 특징으로 하는 글라스기판 에칭방법.According to claim 2, In the step of immersing the glass substrate in the reactor in which the solution containing the potassium (K) ions are stored,
The method of etching a glass substrate, characterized in that the solution containing potassium (K) ions is a solution of potassium nitrate (KNO 3 ).
상기 글라스기판을 반응기에 담그기 전에 세정하는 단계;
를 더 포함하는 것을 특징으로 하는 글라스기판 에칭방법.The method of claim 2, wherein the glass substrate etching method comprises:
Cleaning the glass substrate before immersing it in the reactor;
Glass substrate etching method characterized in that it further comprises.
불산(HF) 용액에 담그는 단계; 및
글라스기판을 순수(DI Water)로 씻은 후 건조시키는 단계;
를 포함하는 것을 특징으로 하는 글라스기판 에칭방법.The method of claim 5, wherein the cleaning of the glass substrate comprises:
Dipping in hydrofluoric acid (HF) solution; And
Washing the glass substrate with DI water and then drying the glass substrate;
Glass substrate etching method comprising a.
상기 열처리된 글라스기판을 에칭 배스(Etching Bath)에 담그는 단계;
를 포함하는 것을 특징으로 하는 글라스기판 에칭방법.Applying a slurry containing potassium (K) ions to the surface of the glass substrate and drying the slurry, and then heat treating the dried glass substrate in a furnace; And
Dipping the heat-treated glass substrate in an etching bath;
Glass substrate etching method comprising a.
불화규산 용액에 규산(silicic acid)을 첨가하여 교반하고, 교반된 용액을 여과하고 붕산(boric acid)을 첨가한 후 가열하여 에칭액을 생성하는 단계;
를 포함하는 것을 특징으로 하는 글라스기판 에칭방법.8. The method of claim 7, wherein the immersing the heat treated glass substrate in an etching bath comprises:
Adding and stirring silicic acid to the fluorosilicate solution, filtering the stirred solution, adding boric acid, and heating to generate an etching solution;
Glass substrate etching method comprising a.
상기 슬러리는 질산칼륨(KNO3)을 포함하는 것을 특징으로 하는 글라스기판 에칭방법.According to claim 7, In the step of applying a slurry containing potassium (K) ions on the surface of the glass substrate and then drying,
The slurry is a glass substrate etching method, characterized in that containing potassium nitrate (KNO 3 ).
상기 글라스기판의 표면에 칼륨(K) 이온을 포함하는 슬러리를 바른 전에 세정하는 단계;
를 더 포함하는 것을 특징으로 하는 글라스기판 에칭방법.The method of claim 7, wherein the glass substrate etching method:
Cleaning the slurry including potassium (K) ions on the surface of the glass substrate before applying the slurry;
Glass substrate etching method characterized in that it further comprises.
불산(HF) 용액에 담그는 단계; 및
글라스기판을 순수(DI Water)로 씻은 후 건조시키는 단계;
를 포함하는 것을 특징으로 하는 글라스기판 에칭방법.The method of claim 10, wherein the cleaning of the glass substrate comprises:
Dipping in hydrofluoric acid (HF) solution; And
Washing the glass substrate with DI water and then drying the glass substrate;
Glass substrate etching method comprising a.
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