KR20080079999A - Etching method and ethching composition used in the same - Google Patents
Etching method and ethching composition used in the same Download PDFInfo
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- KR20080079999A KR20080079999A KR1020080012626A KR20080012626A KR20080079999A KR 20080079999 A KR20080079999 A KR 20080079999A KR 1020080012626 A KR1020080012626 A KR 1020080012626A KR 20080012626 A KR20080012626 A KR 20080012626A KR 20080079999 A KR20080079999 A KR 20080079999A
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- 238000005530 etching Methods 0.000 title claims abstract description 130
- 239000000203 mixture Substances 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 41
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 77
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 77
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 21
- -1 phosphorus compound Chemical class 0.000 claims abstract description 19
- 150000001639 boron compounds Chemical class 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 11
- 150000002222 fluorine compounds Chemical class 0.000 claims abstract description 9
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 7
- 239000011737 fluorine Substances 0.000 claims abstract description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052796 boron Inorganic materials 0.000 claims abstract description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 4
- 239000011574 phosphorus Substances 0.000 claims abstract description 4
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 claims description 18
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 14
- 229910017604 nitric acid Inorganic materials 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- VVRKSAMWBNJDTH-UHFFFAOYSA-N difluorophosphane Chemical compound FPF VVRKSAMWBNJDTH-UHFFFAOYSA-N 0.000 claims description 12
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 6
- 150000003018 phosphorus compounds Chemical class 0.000 claims description 6
- 229910002651 NO3 Inorganic materials 0.000 claims description 5
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 5
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims description 5
- 150000004761 hexafluorosilicates Chemical class 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 4
- 239000004327 boric acid Substances 0.000 claims description 4
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 claims description 4
- 229910015900 BF3 Inorganic materials 0.000 claims description 3
- 150000002823 nitrates Chemical class 0.000 claims description 3
- 150000001343 alkyl silanes Chemical class 0.000 claims description 2
- WKFBZNUBXWCCHG-UHFFFAOYSA-N phosphorus trifluoride Chemical compound FP(F)F WKFBZNUBXWCCHG-UHFFFAOYSA-N 0.000 claims description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 2
- DWYMPOCYEZONEA-UHFFFAOYSA-L fluoridophosphate Chemical compound [O-]P([O-])(F)=O DWYMPOCYEZONEA-UHFFFAOYSA-L 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 claims 1
- LXPCOISGJFXEJE-UHFFFAOYSA-N oxifentorex Chemical compound C=1C=CC=CC=1C[N+](C)([O-])C(C)CC1=CC=CC=C1 LXPCOISGJFXEJE-UHFFFAOYSA-N 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 52
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 52
- 238000001556 precipitation Methods 0.000 abstract description 18
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 239000000243 solution Substances 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229960002050 hydrofluoric acid Drugs 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- RHFUXPCCELGMFC-UHFFFAOYSA-N n-(6-cyano-3-hydroxy-2,2-dimethyl-3,4-dihydrochromen-4-yl)-n-phenylmethoxyacetamide Chemical compound OC1C(C)(C)OC2=CC=C(C#N)C=C2C1N(C(=O)C)OCC1=CC=CC=C1 RHFUXPCCELGMFC-UHFFFAOYSA-N 0.000 description 3
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011365 complex material Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- SAEOCANGOMBQSP-UHFFFAOYSA-N diazanium;fluoro-dioxido-oxo-$l^{5}-phosphane Chemical compound [NH4+].[NH4+].[O-]P([O-])(F)=O SAEOCANGOMBQSP-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Abstract
Description
본 발명은 질화 규소의 에칭용 조성물에 관한 것이다. 나아가서는, 본 발명은 반도체 디바이스나 평판형 디스플레이 등의 절연막에 사용되는 질화 규소를 에칭할 수 있는 조성물에 관한 것이다.The present invention relates to a composition for etching silicon nitride. Furthermore, this invention relates to the composition which can etch the silicon nitride used for insulating films, such as a semiconductor device and a flat panel display.
질화 규소는 세라믹스 재료, 반도체용 재료로서 대단히 중요한 화합물이다. 반도체의 제조 공정에는, 산화 규소에 손상(damage)을 주는 일 없이, 질화 규소만을 선택적으로 에칭하는 것이 필요한 공정이 있다. 현재, 이 공정에는 고순도 인산이 주로 사용되고 있다. 그러나, 고순도 인산에서는 150℃ 이상이라고 하는 고온에서 사용한 경우, 산화 규소의 손상이 크다고 하는 문제가 있었다.Silicon nitride is a very important compound as a ceramic material and a semiconductor material. In the semiconductor manufacturing process, there is a process in which only silicon nitride is selectively etched without damaging silicon oxide. At present, high purity phosphoric acid is mainly used in this process. However, in high-purity phosphoric acid, when used at a high temperature of 150 ° C. or more, there is a problem that silicon oxide damage is large.
산화 규소의 손상을 억제하는 방법으로서 규소를 용해한 고순도 인산 또는 헥사플루오로규산을 첨가한 인산이 제안되어 있다(특허문헌 1 내지 3 참조). 그러나, 헥사플루오로규산은 휘발하기 쉬운 물질이며, 사용 온도 150℃ 이상에서는 헥사플루오로규산이 휘발하여, 안정한 첨가 효과를 얻을 수 없어, 에칭액의 연속 사용이 곤란하였다. 또, 헥사플루오로규산을 첨가한 경우, 에칭액으로부터 불용성의 규소화합물의 석출이 빨라져, 공업적으로 사용하기에는 문제가 있었다.As a method of suppressing damage to silicon oxide, phosphoric acid to which high-purity phosphoric acid or hexafluorosilic acid in which silicon is dissolved has been proposed (see
한편, 반도체 습식 에칭 장치에서는 청정하게 유지하기 위해서 에칭액을 여과 순환시켜 에칭액 중의 불순물 등을 제거하면서 에칭을 행하고 있다. 가열한 인산수용액에 의한 질화 규소의 에칭에 있어서도, 마찬가지로 여과 순환해서 석출물을 제거하는 방법이 제안되어 있다(특허문헌 4). 하지만, 석출한 규소산화물은 여과되기 전에 반도체 웨이퍼 등에 부착되어버리는 문제가 있었다.On the other hand, in the semiconductor wet etching apparatus, etching is performed while circulating the etching liquid to remove impurities and the like in the etching liquid in order to keep clean. Also in the etching of the silicon nitride by the heated phosphoric acid aqueous solution, the method of filtration cycling and removing a precipitate is similarly proposed (patent document 4). However, there is a problem that the precipitated silicon oxide adheres to a semiconductor wafer or the like before being filtered.
100℃ 이하의 온도에서 질화 규소를 에칭하는 방법으로서 인산, 불화수소산 및 질산으로 이루어진 에칭액에 플루오로규산 또는 플루오로규산염을 첨가하는 방법이 개시되어 있다. 그러나, 인산에 불화수소산 및 질산의 쌍방을 첨가한 에칭용 조성물에서는 다른 반도체 재료인 산화 규소의 손상이 커서, 반도체 프로세스에 사용하기에는 문제가 있고, 특히, 고온에서 이용한 경우에는 악영향이 더욱 현저하였다.As a method of etching silicon nitride at a temperature of 100 ° C. or less, a method of adding fluorosilic acid or fluorosilicate to an etching solution consisting of phosphoric acid, hydrofluoric acid and nitric acid is disclosed. However, in the etching composition in which both hydrofluoric acid and nitric acid are added to phosphoric acid, the damage of silicon oxide, which is another semiconductor material, is large and there is a problem for use in the semiconductor process. In particular, when used at a high temperature, the adverse effect is more remarkable.
이와 같이, 지금까지 질화 규소를 고온에서 장기간 안정적으로 선택적으로 에칭할 수 있는 에칭용 조성물은 없었다.As described above, there has been no etching composition capable of selectively etching silicon nitride at a high temperature for a long time.
[특허문헌 1] 일본국 공개 특허 평6-349808호 공보[Patent Document 1] Japanese Unexamined Patent Publication No. 6-349808
[특허문헌 2] 일본국 공개 특허 제2000-133631호 공보[Patent Document 2] Japanese Unexamined Patent Publication No. 2000-133631
[특허문헌 3] 일본국 공개 특허 평8-64574호 공보[Patent Document 3] Japanese Unexamined Patent Publication No. Hei 8-64574
[특허문헌 4] 일본국 공고 특허 평3-20895호 공보[Patent Document 4] Japanese Patent Application Laid-Open No. 3-20895
본 발명의 목적은, 상기 과제를 감안해서, 고순도 인산에 의한 규소산화물에의 손상 및 석출을 억제하고, 인산 에칭액의 교체 빈도를 적게 할 수 있고, 즉 인산 에칭액을 장기에 걸쳐 안정적으로 사용할 수 있는 질화 규소의 에칭 방법을 제공하는 것에 있다.SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to prevent damage and precipitation of silicon oxide by high-purity phosphoric acid and to reduce the replacement frequency of the phosphate etching solution, that is, the phosphoric acid etching solution can be stably used for a long time. It is providing the etching method of silicon nitride.
본 발명자들은, 질화 규소의 에칭에 대해서 예의 검토한 결과, 인화합물, 붕소화합물, 규소화합물 및/또는 그들의 불화물과 물을 함유해서 이루어진 에칭용 조성물에서는 종래의 인산 에칭액보다 규소산화물 손상 및 석출을 억제할 수 있고, 장기에 걸쳐 안정적으로 질화 규소를 에칭 제거할 수 있는 것을 발견하여, 본 발명을 완성시키기에 이르렀다.As a result of earnestly examining the etching of silicon nitride, the present inventors found that the etching composition containing phosphorus compound, boron compound, silicon compound and / or their fluoride and water suppresses silicon oxide damage and precipitation than the conventional phosphoric acid etching solution. It was found that the silicon nitride can be etched away stably over a long period of time, and the present invention has been completed.
본 발명의 에칭 방법에서는 질화 규소의 에칭에 대한 선택성이 높고, 장기간의 에칭에 있어서 산화 규소의 과도한 용해 혹은 석출이 없으며, 질화 규소를 선택적으로 에칭할 수 있으므로, 생산성이 높다.In the etching method of the present invention, the selectivity to etching of silicon nitride is high, there is no excessive dissolution or precipitation of silicon oxide in the etching for a long period of time, and silicon nitride can be selectively etched, so productivity is high.
이하에 본 발명을 더욱 상세에 설명한다.The present invention is explained in more detail below.
본 발명의 질화 규소의 에칭 방법은 인화합물, 붕소화합물, 규소화합물 및/또는 그들의 불화물; 및 물을 함유해서 이루어진 조성물을 이용하는 것이다.The silicon nitride etching method of the present invention includes phosphorus compounds, boron compounds, silicon compounds and / or fluorides thereof; And the composition containing water.
본 발명의 에칭 방법에 사용되는 인화합물 및/또는 그 불화물은 인산, 불화인이지만, 이용되는 인산, 불화인에 특히 제한은 없고, 일반적으로 유통되고 있는 것을 사용할 수 있다.Phosphorus compounds and / or fluorides thereof used in the etching method of the present invention are phosphoric acid and phosphorus fluoride, but there are no particular restrictions on the phosphoric acid and phosphorus fluoride used, and those generally distributed can be used.
본 발명의 에칭 방법에 사용되는 불화인은 삼불화인, 오불화인, HPF6, HPO2F2, H2PO3F 등의 플루오로인산, 플루오로인산 암모늄 등의 플루오로인산염으로 이루어진 군으로부터 선택된 적어도 1종이 바람직하다.The phosphorus fluoride used in the etching method of the present invention is selected from the group consisting of fluorophosphates such as phosphorus trifluoride, phosphorus fluoride, HPF 6 , HPO 2 F 2 , H 2 PO 3 F, and ammonium fluorophosphate At least one selected is preferred.
본 발명의 에칭 방법에 사용되는 붕소화합물 및/또는 그 불화물은 붕산, 붕산 암모늄 등의 붕산염, 삼불화 붕소, HBF4, HBF3(OH), HBF2(OH)2, HBF(OH)3 등의 플루오로붕산, 플루오로붕산 암모늄 등의 플루오로붕산염으로 이루어진 군으로부터 선택된 적어도 1종인 것이 바람직하다.The boron compounds and / or fluorides thereof used in the etching method of the present invention may be borates such as boric acid, ammonium borate, boron trifluoride, HBF 4 , HBF 3 (OH), HBF 2 (OH) 2 , HBF (OH) 3, etc. It is preferable that it is at least 1 sort (s) chosen from the group which consists of fluoroborates, such as fluoroboric acid and ammonium fluoroborate.
본 발명의 에칭 방법은 인산, 0.001 내지 10중량%의 붕소화합물 및/또는 불화인, 1 내지 30중량%의 물로 이루어지고, 0.001 내지 1중량%의 붕소화합물, 15 내지 30중량%의 물로 이루어진 조성이 특히 바람직하다.The etching method of the present invention is composed of phosphoric acid, 0.001 to 10% by weight of a boron compound and / or phosphorus fluoride, 1 to 30% by weight of water, and 0.001 to 1% by weight of boron compound and 15 to 30% by weight of water. This is particularly preferred.
붕소화합물 및/또는 불화인이 0.001중량% 미만이면, 규소산화물의 석출을 억제하는 효과가 작고, 10중량%를 초과하는 붕소화합물 및/또는 불화인을 첨가하면, 실리콘 산화막 등 에칭해서는 안되는 재료가 에칭되기 쉬워진다. 또, 1중량% 미만의 물에서는 질화 규소의 에칭 속도가 낮고, 30중량%를 초과하는 물에서는 에칭용 조성물의 비점이 내려가, 에칭에 적합한 온도를 유지할 수 없게 된다. 공업적으로는 붕소화합물 및/또는 불화인은 0.01 내지 0.2중량%의 범위가 특히 바람직하다.If the boron compound and / or phosphorus fluoride is less than 0.001% by weight, the effect of suppressing the precipitation of silicon oxide is small, and if the boron compound and / or phosphorus fluoride is added more than 10% by weight, materials such as silicon oxide films and the like should not be etched. It becomes easy to etch. Moreover, the etching rate of silicon nitride is low in water less than 1 weight%, and the boiling point of an etching composition falls in water exceeding 30 weight%, and it becomes impossible to maintain the temperature suitable for etching. Industrially, the boron compound and / or phosphorus fluoride is particularly preferably in the range of 0.01 to 0.2% by weight.
본 발명의 에칭 방법에 이용할 수 있는 붕소함유량은 질화 규소의 에칭 속도, 산화 규소의 석출 억제, 더욱 선택비의 안정의 관점에서 0.014중량% 이상인 것이 바람직하고, 더욱 바람직하게는 0.014중량% 내지 10중량%, 0.014중량% 내지 5중량%가 특히 바람직하다.The boron content that can be used in the etching method of the present invention is preferably 0.014% by weight or more, more preferably 0.014% by weight to 10% by weight in view of the etching rate of silicon nitride, the suppression of precipitation of silicon oxide, and the stability of the selectivity. %, 0.014% to 5% by weight is particularly preferred.
본 발명의 에칭 방법에 이용하는 조성물의 규소화합물 및/또는 그 불화물은 규산, 규산염, 헥사플루오로규산, 헥사플루오로규산염, 테트라에톡시실레인, 테트라메톡시실레인 등의 알콕시실레인, 메틸트라이메톡시실레인 등의 알킬실레인이 특히 바람직하지만, 그 이외의 가용성 규소화합물을 사용해도 무방하다. 규산염, 헥사플루오로규산염으로서는 암모늄염이 바람직하다. 규산, 규산염은 규소산화물 등을 황산이나 인산에 첨가하여 가열해서 용해시킨 것을 사용해도 된다. 헥사플루오로규산, 헥사플루오로규산염은 공업적으로 유통되고 있는 것을 사용해도 되고, 규산에 불화수소산을 반응시키고, 더욱 이것을 염으로 해도 무방하다.The silicon compound of the composition used for the etching method of this invention and / or its fluoride is alkoxysilanes, such as silicic acid, a silicate, hexafluoro silicic acid, a hexafluorosilicate, tetraethoxysilane, tetramethoxysilane, methyltrile, etc. Although alkylsilanes, such as methoxysilane, are especially preferable, you may use other soluble silicon compounds. As a silicate and hexafluorosilicate, an ammonium salt is preferable. As the silicic acid or the silicate, a silicon oxide or the like may be added to sulfuric acid or phosphoric acid, and heated and dissolved. Hexafluorosilicic acid and hexafluorosilicate may use what is industrially distributed, and hydrofluoric acid may be made to react with silicic acid, and this may be used as a salt.
이들 규소화합물의 첨가에 의해, 실리콘 산화막에의 손상을 저감할 수 있다.By addition of these silicon compounds, damage to a silicon oxide film can be reduced.
본 발명의 에칭 방법에 있어서의 규소화합물의 농도는 0 내지 0.5중량%, 특히 0.001 내지 0.1중량%가 바람직하다. 0.5중량% 이상 첨가하면, 규소산화물이 석출될 우려가 있다.The concentration of the silicon compound in the etching method of the present invention is preferably from 0 to 0.5% by weight, in particular from 0.001 to 0.1% by weight. When 0.5 weight% or more is added, there exists a possibility that a silicon oxide may precipitate.
본 발명의 에칭 방법에 있어서의 규소함유량은 0.001 내지 0.01중량%, 불소함유량은 0.010 내지 0.050중량%인 것이 특히 바람직하다. 규소함유량이 0.001중량% 미만에서는, 사용 배취(batch) 초기의 산화 규소의 에칭 속도가 크고, 초기 배취의 선택비가 낮아 안정되기 어렵다. 한편, 0.01중량% 이상에서는, 배취 처리의 반복에 따라서 질화 규소의 에칭 속도가 저하하고, 선택비도 안정되기 어렵다.It is particularly preferable that the silicon content in the etching method of the present invention is 0.001 to 0.01% by weight, and the fluorine content is 0.010 to 0.050% by weight. If the silicon content is less than 0.001% by weight, the etching rate of the silicon oxide in the initial batch batch is high, and the selectivity of the initial batch is low, making it difficult to stabilize. On the other hand, at 0.01 weight% or more, the etching rate of silicon nitride falls with repetition of a batch process, and selection ratio is also hard to stabilize.
본 발명의 에칭 방법에서는 배취 초기부터 높은 선택성을 얻을 수 있고, 또한 장기에 걸쳐 안정성이 유지된다. 이러한 특성이 얻어지는 원인은 반드시 확실하지 않지만, 에칭 조성물 중에서 붕소와 규소와 불소(불산)의 복합화물이 형성되어, 지극히 안정한 상태가 유지되어 있는 것으로 여겨진다.In the etching method of the present invention, high selectivity can be obtained from the beginning of the batch, and stability is maintained for a long time. Although the cause of such a characteristic is not necessarily obtained, it is thought that the complex material of boron, silicon, and fluorine (fluoric acid) is formed in an etching composition, and the extremely stable state is maintained.
본 발명의 에칭 방법에서는, 질산 및/또는 질산염을 첨가하는 것이 바람직하다. 질산 및/또는 질산염을 첨가하면, 실리콘 산화막에의 손상을 저감할 수 있다. 특히, 인화합물, 붕소화합물 및/또는 그들의 불화물과 질산 및/또는 질산염을 병용해서 이용했을 경우, 배취 처리를 반복해도 산화 규소에 대한 질화 규소의 선택 에칭성의 변동이 작아, 지극히 안정성이 높아진다. 질산염으로서는 질산 암모늄을 사용하는 것이 바람직하다.In the etching method of this invention, it is preferable to add nitric acid and / or nitrate. By adding nitric acid and / or nitrate, damage to the silicon oxide film can be reduced. In particular, when phosphorus compounds, boron compounds and / or their fluorides and nitric acid and / or nitrates are used in combination, even if the batch treatment is repeated, variations in the selectivity of silicon nitride to silicon oxide are small, resulting in extremely high stability. As nitrate, it is preferable to use ammonium nitrate.
본 발명의 에칭 방법에 있어서의 질산 및/또는 질산염의 농도는 0 내지 20중량%, 특히 0.0001 내지 10중량%, 더욱 0.01 내지 1중량%, 특히 0.01 내지 0.2중량%가 바람직하다. 한편, 20중량% 이상 첨가하면, 질화 규소의 에칭 속도가 저하한다.The concentration of nitric acid and / or nitrate in the etching method of the present invention is preferably 0 to 20% by weight, in particular 0.0001 to 10% by weight, more preferably 0.01 to 1% by weight, especially 0.01 to 0.2% by weight. On the other hand, when 20 weight% or more is added, the etching rate of a silicon nitride will fall.
본 발명의 에칭 방법은 질화 규소의 에칭, 특히 반도체 디바이스, 평판형 디스플레이의 절연막으로서 사용되는 질화 규소의 에칭에 이용함에 있어서 우수한 성능을 발휘한다. 반도체 디바이스에 있어서, 질화 규소는 반도체 기판 위에 CVD법(화학 기상 성장) 등으로 성막되지만, 소자, 회로를 형성하기 위해서는 에칭에서 불필요한 부분을 제거할 필요가 있다. 본 발명의 에칭 방법을 사용하면, 질화 규 소를 선택적으로 또한 장기에 걸쳐 안정적으로 에칭할 수 있다.The etching method of the present invention exhibits excellent performance in the use of silicon nitride for etching, especially for silicon nitride used as an insulating film for semiconductor devices and flat panel displays. In a semiconductor device, silicon nitride is formed on the semiconductor substrate by CVD (chemical vapor deposition) or the like, but in order to form elements and circuits, it is necessary to remove unnecessary portions in etching. Using the etching method of the present invention, silicon nitride can be etched selectively and stably over a long period of time.
본 발명의 에칭 방법의 온도는 120 내지 180℃, 바람직하게는 130 내지 170℃이다. 180℃를 초과하는 온도에서는, 질화 규소 이외의 반도체 재료에 대하여 손상이 발생하기 쉽고, 120℃ 미만의 온도에서는, 공업적으로 만족할 수 있는 속도로 질화 규소를 에칭하는 것이 어렵다.The temperature of the etching method of this invention is 120-180 degreeC, Preferably it is 130-170 degreeC. At temperatures exceeding 180 ° C, damage is likely to occur to semiconductor materials other than silicon nitride, and at temperatures below 120 ° C, it is difficult to etch silicon nitride at an industrially acceptable rate.
본 발명의 에칭 방법에서는, 질화 규소의 에칭에 따라, 에칭액 중에 규소의 농도가 높아진다. 따라서, 이것을 피하기 위해서, 인화합물, 붕소화합물 및/또는 그들의 불화물을 추가로 첨가할 수 있다. 붕소화합물 또는 불화인은 붕소화합물을 단독으로 첨가해도 되고, 붕소화합물 및/또는 불화인을 함유하는 본 발명의 에칭용 조성물로서 첨가해도 무방하다.In the etching method of this invention, according to the etching of silicon nitride, the density | concentration of silicon in an etching liquid becomes high. Therefore, to avoid this, phosphorus compounds, boron compounds and / or their fluorides may be further added. The boron compound or phosphorus fluoride may be added alone or as a composition for etching of the present invention containing a boron compound and / or phosphorus fluoride.
또, 배취 처리를 반복할 경우에는, 본 발명의 에칭 조성물의 일부의 성분이 소비 혹은 휘발되어, 본 발명의 효과가 저하할 경우가 있기 때문에, 본 발명의 에칭 조성물 중의 인화합물, 붕소화합물, 규소화합물 및/또는 그들의 불화물, 질산 및/또는 질산염, 및 물 중의 어느 1종 이상을 적절하게 추가하면서 이용해도 무방하다.Moreover, when repeating a batch process, some components of the etching composition of this invention may be consumed or volatilized, and the effect of this invention may fall, and the phosphorus compound, boron compound, and silicon in the etching composition of this invention may be reduced. Any one or more of the compounds and / or their fluorides, nitric acid and / or nitrates, and water may be used while appropriately added.
본 발명의 에칭 방법에서는, 질화 규소를 에칭할 때, 초음파 등을 사용하여 에칭을 촉진해도 무방하다.In the etching method of the present invention, when etching silicon nitride, the etching may be accelerated by using an ultrasonic wave or the like.
실시예Example
본 발명을 이하의 실시예에 의해 더욱 상세히 설명하지만, 본 발명은 이들로 한정되는 것이 아니다.Although this invention is demonstrated further in detail by the following example, this invention is not limited to these.
실시예Example 1 One
플루오로붕산 0.02%, 암모니아 0.002%, 물 5% 및 인산 잔부로 이루어진 에칭 조성물 100g에, SiN을 CVD법에 의해 300㎚의 두께로 성막한 실리콘 웨이퍼(한 변 15㎜의 정방형) 및 열산화막 1000㎚의 두께로 성막한 실리콘 웨이퍼(한 변 15㎜의 정방형)를 150℃에서 30분간 침지하였다. 웨이퍼를 꺼내어, 수세, 건조한 뒤, 광간섭식 막후계(膜厚計)로 SiN 및 열산화막의 막두께를 측정하였다. 이것을 1배취로 해서 연속적으로 14배취 반복하였다. 14배취째의 SiN 에칭 속도는 6.10㎚/min이었고, 열산화막의 에칭 속도는 0.03㎚/min이었다. 14배취째에 있어서도, 열산화막 위에 규소산화물의 석출은 확인되지 않았고, 열산화막은 약간 에칭되어 있었다.A silicon wafer (square of 15 mm on one side) and a
해당 에칭 조성물에서는, 처음에는 가용성 규산을 함유하지 않은 상태로부터 출발했지만, 해당 조성물은 사용 개시 직후부터 가용성 규산을 함유하는 상태로 되었다. 각 배취에 있어서의 질화 규소와 산화 규소의 에칭 선택 비율(질화 규소/산화 규소)을 조사한 바, 1배취째의 18로부터 14배취째에서 130으로 향상하였다.In the said etching composition, although starting from the state which does not contain soluble silicic acid at first, the composition became the state containing soluble silicic acid immediately after starting use. When the etching selection ratio (silicon nitride / silicon oxide) of silicon nitride and silicon oxide in each batch was examined, it improved from 18 in the first batch to 130 in the 14th batch.
실시예Example 2 2
실시예 1의 조성에 추가로 헥사플루오로규산을 0.03% 첨가한 조성물을 이용하여, 실시예 1과 마찬가지 조건으로 질화 규소의 에칭을 행하였다.Silicon nitride was etched on the conditions similar to Example 1 using the composition which added 0.03% of hexafluoro silicic acid to the composition of Example 1 further.
14배취째에 있어서도 규소산화물의 석출은 확인되지 않았다.Also in the 14th batch, precipitation of the silicon oxide was not confirmed.
질화 규소와 산화 규소의 선택비는 1배취째부터 220으로, 당초부터 높은 선택비였다.The selection ratio of silicon nitride and silicon oxide was 220 from the first batch, and was a high selection ratio from the beginning.
실시예Example 3 3
실시예 1의 조성에 있어서 플루오로붕산 0.02%를 플루오로인산 0.02%로 변경한 조성물을 이용하여, 실시예 1과 마찬가지 조건으로 질화 규소의 에칭을 행하였다.Silicon nitride was etched on the conditions similar to Example 1 using the composition which changed 0.02% of fluoroboric acid to 0.02% of fluorophosphoric acid in the composition of Example 1.
14배취째의 SiN 에칭 속도는 6.00㎚/min이었고, 열산화막의 에칭 속도는 0.06㎚/min이었다. 14배취째에 있어서도, 열산화막 위에 규소산화물의 석출은 확인되지 않았고, 열산화막은 약간 에칭되어 있었다.The SiN etching rate at the 14th batch was 6.00 nm / min, and the etching rate of the thermal oxide film was 0.06 nm / min. Also in the 14th batch, precipitation of silicon oxide was not confirmed on the thermal oxide film, and the thermal oxide film was slightly etched.
해당 에칭 조성물에서는, 처음에는 가용성 규산을 함유하지 않은 상태로부터 출발했지만, 해당 조성물은 사용 개시 직후부터 가용성 규산을 함유하는 상태였다. 각 배취에 있어서의 질화 규소와 산화 규소의 에칭 선택 비율(질화 규소/산화 규소)을 조사한 바, 1배취째는 15였지만, 14배취째는 100이었다.In this etching composition, it started from the state which does not contain soluble silicic acid at first, but the composition was a state containing soluble silicic acid immediately after starting use. When the etching selection ratio (silicon nitride / silicon oxide) of silicon nitride and silicon oxide in each batch was examined, the first batch was 15, but the 14th batch was 100.
실시예Example 4 4
실시예 1의 조성에 있어서 플루오로붕산 0.02%를 플루오로붕산 0.01% 및 플루오로인산 0.01%로 변경한 조성물을 이용하여, 실시예 1과 마찬가지 조건으로 질화 규소의 에칭을 행하였다.Silicon nitride was etched on the conditions similar to Example 1 using the composition which changed 0.02% of fluoroboric acid into 0.01% of fluoroboric acid and 0.01% of fluorophosphoric acid in the composition of Example 1.
14배취째의 SiN 에칭 속도는 6.00㎚/min이었고, 열산화막의 에칭 속도는 0.05㎚/min이었다. 14배취째에 있어서도, 열산화막 위에 규소산화물의 석출은 확인되지 않았고, 열산화막은 약간 에칭되어 있었다.The SiN etching rate at the 14th batch was 6.00 nm / min, and the etching rate of the thermal oxide film was 0.05 nm / min. Also in the 14th batch, precipitation of silicon oxide was not confirmed on the thermal oxide film, and the thermal oxide film was slightly etched.
해당 에칭 조성물에서는, 처음에는 가용성 규산을 함유하지 않은 상태로부터 출발했지만, 해당 조성물은 사용 개시 직후부터 가용성 규산을 함유하는 상태였다. 각 배취에 있어서의 질화 규소와 산화 규소의 에칭 선택 비율(질화 규소/산화 규소)을 조사한 바, 1배취째는 16이었지만, 14배취째는 120이었다.In this etching composition, it started from the state which does not contain soluble silicic acid at first, but the composition was a state containing soluble silicic acid immediately after starting use. When the etching selection ratio (silicon nitride / silicon oxide) of silicon nitride and silicon oxide in each batch was examined, the first batch was 16, but the 14th batch was 120.
실시예Example 5 5
실시예 1의 조성에 추가로 헥사플루오로규산을 0.03% 첨가한 조성물을 이용하여, 실시예 1과 마찬가지 조건으로 질화 규소의 에칭을 행하였다.Silicon nitride was etched on the conditions similar to Example 1 using the composition which added 0.03% of hexafluoro silicic acid to the composition of Example 1 further.
0.02% 플루오로붕산을 4%/배취마다 첨가하고, 14배취째에 있어서도 규소산화물의 석출은 확인되지 않았다.0.02% fluoroboric acid was added every 4% / batch, and the precipitation of the silicon oxide was not confirmed even in 14th batch.
질화 규소와 산화 규소의 선택비는 1배취째로부터 200으로, 당초부터 높은 선택비를 얻을 수 있었다.The selectivity ratio of silicon nitride and silicon oxide was 200 from the 1st batch, and high selection ratio was obtained from the beginning.
실시예Example 6 6
실시예 5의 조성에 있어서 플루오로붕산 0.02%를 플루오로붕산 0.05%로 변경하고, 추가로 질산을 0.1% 첨가한 조성물을 이용하여, 실시예 5와 마찬가지 조건으로 질화 규소의 에칭을 행하였다.In the composition of Example 5, silicon nitride was etched under the same conditions as in Example 5 using a composition in which 0.02% of fluoroboric acid was changed to 0.05% of fluoroboric acid, and 0.1% of nitric acid was further added.
0.05% 플루오로붕산을 4%/배취마다 첨가하고, 1배취째의 SiN 에칭 속도는 5.42㎚/min, 12배취째의 SiN 에칭 속도는 5.00㎚/min이었고, 열산화막의 에칭 속도는 0.01㎚/min이었다. 12배취째에 있어서도, 열산화막 위에 규소산화물의 석출은 확인되지 않았고, 열산화막은 약간 에칭되어 있었을 뿐이었다.0.05% fluoroboric acid was added every 4% / batch, the SiN etching rate of the first batch was 5.42 nm / min, the SiN etching rate of the 12th batch was 5.00 nm / min, and the etching rate of the thermal oxide film was 0.01 nm /. min. Also in the 12th batch, precipitation of silicon oxide was not confirmed on the thermal oxide film, and the thermal oxide film was only slightly etched.
각 배취에 있어서의 질화 규소와 산화 규소의 에칭 선택 비율(질화 규소/산화 규소)을 조사한 바, 1배취째는 325로 당초부터 높은 선택비였고, 12배취째도 440으로 높은 선택비가 유지되었다.When the etching selection ratio (silicon nitride / silicon oxide) of silicon nitride and silicon oxide in each batch was examined, the first batch was 325, which was a high selectivity from the beginning, and the second batch was 440, and the high selectivity was maintained.
실시예Example 7 7
실시예 6의 조성에 있어서 질산 0.1%를 질산 1%로 변경한 조성물을 이용하여, 실시예 5와 마찬가지 조건으로 질화 규소의 에칭을 행하였다.Silicon nitride was etched on the conditions similar to Example 5 using the composition which changed 0.1% nitric acid to 1% nitric acid in the composition of Example 6.
1배취째의 SiN 에칭 속도는 5.57㎚/min, 12배취째의 SiN 에칭 속도는 5.02㎚/min이었고, 열산화막의 에칭 속도는 0.02㎚/min이었다. 12배취째에 있어서도, 열산화막 위에 규소산화물의 석출은 확인되지 않았고, 열산화막은 약간 에칭되어 있었다.SiN etching rate of the 1st batch was 5.57 nm / min, SiN etching rate of the 12th batch was 5.02 nm / min, and the etching rate of the thermal oxidation film was 0.02 nm / min. Also in the 12th batch, precipitation of silicon oxide was not confirmed on the thermal oxide film, and the thermal oxide film was slightly etched.
각 배취에 있어서의 질화 규소와 산화 규소의 에칭 선택 비율(질화 규소/산화 규소)을 조사한 바, 1배취째는 220, 12배취째는 328이었다.When the etching selection ratio (silicon nitride / silicon oxide) of silicon nitride and silicon oxide in each batch was examined, the first batch was 220 and the twelfth batch was 328.
실시예Example 8 8
실시예 1의 조성에 있어서 플루오로붕산 0.02%를 플루오로붕산 0.05%로 변경하고, 추가로 질산 암모늄을 0.1% 첨가한 조성물을 이용하여, 실시예 1과 마찬가지 조건으로 질화 규소의 에칭을 행하였다.In the composition of Example 1, silicon nitride was etched under the same conditions as in Example 1 using a composition in which 0.02% of fluoroboric acid was changed to 0.05% of fluoroboric acid, and 0.1% of ammonium nitrate was further added. .
1배취째의 SiN 에칭 속도는 5.44㎚/min, 12배취째의 SiN 에칭 속도는 4.99㎚/min이었고, 열산화막의 에칭 속도는 0.01㎚/min이었다. 12배취째에 있어서도, 열산화막 위에 규소산화물의 석출은 확인되지 않았고, 열산화막은 약간 에칭되어 있었다.SiN etching rate of the 1st batch was 5.44 nm / min, SiN etching rate of the 12th batch was 4.99 nm / min, and the etching rate of the thermal oxidation film was 0.01 nm / min. Also in the 12th batch, precipitation of silicon oxide was not confirmed on the thermal oxide film, and the thermal oxide film was slightly etched.
해당 에칭 조성물에서는, 처음에는 가용성 규산을 함유하지 않은 상태로부터 출발했지만, 해당 조성물은 사용 개시 직후부터 가용성 규산을 함유하는 상태였다. 각 배취에 있어서의 질화 규소와 산화 규소의 에칭 선택 비율(질화 규소/산화 규 소)을 조사한 바, 1배취째는 340으로 당초부터 높은 선택비였고, 12배취째는 441이었다.In this etching composition, it started from the state which does not contain soluble silicic acid at first, but the composition was a state containing soluble silicic acid immediately after starting use. The etching selection ratio (silicon nitride / silicon oxide) of silicon nitride and silicon oxide in each batch was examined. The first batch was 340, which was a high selection ratio from the beginning, and the fourth batch was 441.
실시예Example 9 9
헥사플루오로규산 0.03%, 물 2.5% 및 인산 잔부로 이루어진 에칭 조성물에 배취마다 0.05% 플루오로붕산을 4%/배취마다 첨가한 이외에는, 실시예 1과 마찬가지 방법으로 에칭을 실시하였다.The etching was carried out in the same manner as in Example 1 except that 0.05% fluoroboric acid was added every 4% / batch to the etching composition consisting of 0.03% hexafluorosilicic acid, 2.5% water and the balance of phosphoric acid.
배취를 거듭해도 질화 규소의 에칭 속도의 저하는 없었고, 산화 규소의 에칭도 지극히 낮은 수준으로 유지되었다.Even if the batch was repeated, there was no decrease in the etching rate of silicon nitride, and the etching of silicon oxide was also maintained at an extremely low level.
실시예Example 10 10
실시예 9의 조성에 추가로 0.1%(1000ppm)의 질산을 첨가하고, 실시예 1과 마찬가지 방법으로 에칭을 실시하였다.0.1% (1000 ppm) nitric acid was further added to the composition of Example 9, and etching was performed in the same manner as in Example 1.
실시예 9와 마찬가지로 질화 규소의 에칭 속도의 저하는 없었고, 산화 규소의 에칭도 지극히 낮은 수준으로 유지되었지만, 특히 배취수를 거듭한 후의 선택비가 실시예 9보다도 높았다.As in Example 9, there was no decrease in the etching rate of silicon nitride, and the etching of silicon oxide was also maintained at an extremely low level, but the selectivity was particularly higher than that in Example 9 after repeated drainage.
실시예Example 11 11
규소 0.0043%, 불소 0.0174%, 붕소 0.015%(헥사플루오로규산 0.022%, 붕산 0.086% 상당), 물 3.75% 및 인산 잔부로 이루어진 에칭 조성물에 배취마다 0.05% 플루오로붕산을 4.5%/배취마다 첨가하고, 155℃에서 평가한 이외에는 실시예 1과 마찬가지 방법으로 에칭을 실시하였다.To an etching composition consisting of 0.0043% silicon, 0.0174% fluorine, 0.015% boron (0.022% hexafluorosilicic acid, 0.086% boric acid), 3.75% water and the balance of phosphoric acid, 0.05% fluoroboric acid per batch was added at 4.5% / batch And except having evaluated at 155 degreeC, it etched by the method similar to Example 1.
본 조성에서는, 최초의 배취로부터 일정한 선택비를 얻을 수 있었고, 게다가 배취를 거듭해도 질화 규소의 에칭 속도의 저하는 없었다.In this composition, a constant selectivity could be obtained from the first batch, and even if the batch was repeated, there was no decrease in the etching rate of silicon nitride.
실시예Example 12 12
규소 0.0039%, 불소 0.0158%(헥사플루오로규산으로 0.02% 상당)로 한 이외에는 실시예 11과 마찬가지 조건으로 질화 규소의 에칭을 행하였다.Silicon nitride was etched under the same conditions as in Example 11 except that 0.0039% silicon and 0.0158% fluorine (equivalent to 0.02% in hexafluorosilic acid) were used.
배취를 거듭해도 질화 규소의 에칭 속도의 저하는 없었지만, 1, 2배취째의 열산화막의 에칭 속도가 0.05㎚/min 이상으로, 실시예 11보다 컸다.Although the etching rate of silicon nitride did not fall even if batch was repeated, the etching rate of the thermal oxidation film of the 1st and 2nd batch was 0.05 nm / min or more, and it was larger than Example 11.
실시예Example 13 13
규소 0.0049%, 불소 0.0198%(헥사플루오로규산으로 0.025% 상당)로 한 이외에는 실시예 11과 마찬가지 조건으로 질화 규소의 에칭을 행하였다.Silicon nitride was etched under the same conditions as in Example 11 except that 0.0049% silicon and 0.0198% fluorine (equivalent to 0.025% in hexafluorosilic acid) were used.
산화 규소의 에칭은 낮은 수준으로 유지되었지만, 3배취째까지 질화 규소의 에칭 속도의 저하를 볼 수 있었다.Although etching of silicon oxide was kept at a low level, the etching rate of silicon nitride was seen to be reduced until the third batch.
비교예Comparative example 1 One
플루오로붕산, 플루오로인산을 모두 첨가하지 않는 이외에는 실시예 1과 마찬가지 방법으로 에칭을 실시하였다. 14배취째의 SiN 에칭 속도는 2.49㎚/min이었다. 14배취째에서는, 열산화막 위에 규소산화물의 석출이 확인되었고, 열산화막은 막두께가 증가하고 있었다.The etching was performed in the same manner as in Example 1 except that neither fluoroboric acid nor fluorophosphoric acid was added. SiN etching rate of the 14th batch was 2.49 nm / min. In the 14th batch, precipitation of silicon oxide was confirmed on the thermal oxide film, and the thermal oxide film had an increase in film thickness.
비교예Comparative example 2 2
헥사플루오로규산 0.03%, 물 2.5% 및 인산 잔부로 이루어진 에칭 조성물을 이용하여, 실시예 1과 마찬가지 방법으로 에칭을 실시하였다.Etching was carried out in the same manner as in Example 1, using an etching composition consisting of 0.03% of hexafluorosilicic acid, 2.5% of water and the balance of phosphoric acid.
배취수를 거듭할 때마다, 질화 규소의 에칭 속도가 저하하였다.Each time the number of batches was repeated, the etching rate of silicon nitride decreased.
비교예Comparative example 3 3
비교예 2의 조성에 대하여, 배취마다 0.1%헥사플루오로규산을 4%/배취마다 순차 첨가하였다.For the composition of Comparative Example 2, 0.1% hexafluorosilicic acid was added sequentially in batches every 4% / batch.
배취를 거듭해도 질화 규소 에칭의 에칭 속도의 저하는 없었지만, 5배취째 이후에 산화 규소의 석출이 생겨, 연속해서 사용할 수 없었다.Even if the batch was repeated, there was no decrease in the etching rate of silicon nitride etching. However, precipitation of silicon oxide occurred after the fifth batch, and it could not be used continuously.
비교예Comparative example 4 4
실시예 5의 조성에 있어서 플루오로붕산 0.02%를 플루오로붕산 1%로 변경하고, 추가로 질산을 0.1% 첨가한 조성물을 이용하여, 실시예 5와 마찬가지 조건으로 질화 규소의 에칭을 행하였다.In the composition of Example 5, silicon nitride was etched under the same conditions as in Example 5 using a composition in which 0.02% of fluoroboric acid was changed to 1% of fluoroboric acid, and 0.1% of nitric acid was further added.
1.5% 플루오로붕산을 4%/배취마다 첨가하고, 1배취째의 SiN 에칭 속도는 45.4㎚/min, 열산화막의 에칭 속도는 84.6㎚/min이었다. 12배취째의 SiN 에칭 속도는 49.0㎚/min이었고, 열산화막의 에칭 속도는 70.1㎚/min이었다.1.5% fluoroboric acid was added every 4% / batch, the SiN etching rate of the 1st batch was 45.4 nm / min, and the etching rate of the thermal oxidation film was 84.6 nm / min. The SiN etching rate at the 12th batch was 49.0 nm / min, and the etching rate of the thermal oxide film was 70.1 nm / min.
각 배취에 있어서의 질화 규소와 산화 규소의 에칭 선택 비율(질화 규소/산화 규소)을 조사한 바, 1배취째는 0.5였고, 12배취째도 0.7로 지극히 낮은 선택비였다.The etching selection ratio (silicon nitride / silicon oxide) of silicon nitride and silicon oxide in each batch was examined, and the first batch was 0.5 and the 12th batch was 0.7, which was an extremely low selectivity.
도 1은 실시예 11 내지 13의 조건에 있어서의 질화 규소의 에칭 속도를 나타낸 도면;1 shows the etching rate of silicon nitride under the conditions of Examples 11 to 13;
도 2는 실시예 11 내지 13의 조건에 있어서의 산화 규소의 에칭 속도를 나타낸 도면;2 shows the etching rate of silicon oxide under the conditions of Examples 11 to 13;
도 3은 실시예 11 내지 13의 조건에 있어서의 질화 규소의 에칭 속도의 안정성을 나타낸 도면;3 shows the stability of the etching rate of silicon nitride under the conditions of Examples 11 to 13;
도 4는 실시예 11 내지 13의 조건에 있어서의 선택비(질화 규소/산화 규소)를 나타낸 도면;4 shows selectivity (silicon nitride / silicon oxide) under the conditions of Examples 11 to 13;
도 5는 비교예 2, 3의 조건에 있어서의 질화 규소의 에칭 속도를 나타낸 도면;5 shows the etching rates of silicon nitride under the conditions of Comparative Examples 2 and 3;
도 6은 비교예 2, 3의 조건에 있어서의 산화 규소의 에칭 속도를 나타낸 도면(음의 에칭 속도는 산화 규소의 석출을 나타냄);FIG. 6 is a diagram showing an etching rate of silicon oxide under the conditions of Comparative Examples 2 and 3 (negative etching rate indicates precipitation of silicon oxide); FIG.
도 7은 실시예 9, 10의 조건에 있어서의 질화 규소의 에칭 속도를 나타낸 도면;7 shows the etching rates of silicon nitride under the conditions of Examples 9 and 10;
도 8은 실시예 9, 10의 조건에 있어서의 산화 규소의 에칭 속도를 나타낸 도면.8 shows etching rates of silicon oxide under the conditions of Examples 9 and 10;
Claims (11)
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JP2007330109A JP5332197B2 (en) | 2007-01-12 | 2007-12-21 | Etching composition and etching method |
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Cited By (5)
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WO2011052989A3 (en) * | 2009-10-30 | 2011-09-15 | 동우 화인켐 주식회사 | Etching solution composition |
KR101228094B1 (en) * | 2010-11-23 | 2013-01-31 | 삼성코닝정밀소재 주식회사 | Method for etching glass substrate and glass substrate |
KR101281082B1 (en) * | 2011-06-15 | 2013-07-09 | 삼성코닝정밀소재 주식회사 | Etching glass and method of manufacturing thereof |
KR20180109429A (en) * | 2017-03-28 | 2018-10-08 | 동우 화인켐 주식회사 | Etchant composition for etching nitride layer and method of forming pattern using the same |
KR20190038459A (en) * | 2017-09-29 | 2019-04-08 | 솔브레인 주식회사 | Composition for etching and manufacturing method of semiconductor device using the same |
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US8298435B2 (en) * | 2007-10-19 | 2012-10-30 | International Business Machines Corporation | Selective etching bath methods |
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US5472562A (en) * | 1994-08-05 | 1995-12-05 | At&T Corp. | Method of etching silicon nitride |
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- 2008-02-12 KR KR1020080012626A patent/KR20080079999A/en not_active Application Discontinuation
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Cited By (5)
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WO2011052989A3 (en) * | 2009-10-30 | 2011-09-15 | 동우 화인켐 주식회사 | Etching solution composition |
KR101228094B1 (en) * | 2010-11-23 | 2013-01-31 | 삼성코닝정밀소재 주식회사 | Method for etching glass substrate and glass substrate |
KR101281082B1 (en) * | 2011-06-15 | 2013-07-09 | 삼성코닝정밀소재 주식회사 | Etching glass and method of manufacturing thereof |
KR20180109429A (en) * | 2017-03-28 | 2018-10-08 | 동우 화인켐 주식회사 | Etchant composition for etching nitride layer and method of forming pattern using the same |
KR20190038459A (en) * | 2017-09-29 | 2019-04-08 | 솔브레인 주식회사 | Composition for etching and manufacturing method of semiconductor device using the same |
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