KR20120052583A - Light emitting diode and method for fabricating the light emitting device - Google Patents

Abstract

PURPOSE: A light emitting device and a manufacturing method thereof are provided to prevent high electric fields applied to a light emitting structure, thereby improving reliability and stability of the light emitting device. CONSTITUTION: A bonding layer(150) is formed on a support substrate(160). A conductive support layer(170) is formed on the bonding layer. A channel layer(180) is formed on the conductive support layer. An ohmic layer(130) is formed on a reflection layer. A light emitting structure(120) includes a first conductivity type semiconductor layer(122), an active layer(124), and a second conductivity type semiconductor layer(126).

Description

Light emitting device and method for manufacturing the light emitting device {Light emitting diode and method for fabricating the light emitting device}

The embodiment relates to a light emitting device.

Light emitting devices such as light emitting diodes or laser diodes using semiconductors of Group 3-5 or 2-6 compound semiconductor materials of semiconductors have various colors such as red, green, blue and ultraviolet rays due to the development of thin film growth technology and device materials. It is possible to realize efficient white light by using fluorescent materials or combining colors, and it has low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps. Has an advantage.

Therefore, a white light emitting device that can replace a fluorescent light bulb or an incandescent bulb that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of a transmission module of an optical communication means and a liquid crystal display (LCD) display device. Applications are expanding to diode lighting devices, automotive headlights and traffic lights.

The embodiment aims to improve the stability and reliability of the light emitting device by preventing a high electric field from being applied to the light emitting structure.

Embodiments include a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; Irregularities formed on the first conductivity type semiconductor layer; A filling layer filled in at least a portion of the unevenness; And a first electrode formed on at least a portion of the first conductivity type semiconductor layer and the filling layer.

In this case, the first electrode may contact at least a portion of the filling layer formed on the first conductive semiconductor layer or the unevenness.

In addition, the filling layer is formed of a non-conductive material having a refractive index of 1.3 to 2.5, a light transmittance of 70% or more, or a material having a predetermined range of conductivity close to the conductivity of the first conductivity type semiconductor layer with a light transmittance of 70% or more. Can be.

In addition, the filling layer may be filled with a thickness covering 50 to 90% of the surface area of the uneven surface formed on the first conductivity-type semiconductor layer.

The light emitting device may further include a passivation layer formed on at least a portion of at least one of the first conductivity type semiconductor layer, the filling layer, and the first electrode.

In addition, another embodiment may include forming a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; Forming a filling layer on at least a portion of the unevenness formed on the first conductivity type semiconductor layer; And forming a first electrode on at least a portion of the first conductivity type semiconductor layer and the filling layer.

In this case, the first electrode may be formed on at least a portion of the filling layer and may contact at least a portion of the unevenness formed in the first conductivity type semiconductor layer.

In addition, the filling layer is formed of a non-conductive material having a refractive index of 1.3 to 2.5, a light transmittance of 70% or more, or a material having a predetermined range of conductivity close to the conductivity of the first conductivity type semiconductor layer with a light transmittance of 70% or more. Can be.

In addition, the filling layer may be filled with a thickness covering 50 to 90% of the surface area of the uneven surface formed on the first conductivity-type semiconductor layer.

The light emitting device according to the embodiment has the effect of increasing the stability and reliability of the light emitting device by preventing a high electric field is applied to the light emitting structure.

1 is a cross-sectional view of a first embodiment of a light emitting device,
2A to 2K are views showing a manufacturing method of the first embodiment of the light emitting device;
3 is a view showing an embodiment of a light emitting device package.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

In the description of the above embodiments, each layer (region), region, pattern or structures may be "on" or "under" the substrate, each layer (layer), region, pad or pattern. In the case of what is described as being formed, "on" and "under" include both being formed "directly" or "indirectly" through another layer. In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

1 is a cross-sectional view of a first embodiment of a light emitting device.

As shown in FIG. 1. The light emitting device of the first embodiment includes a bonding layer 150 formed on the support substrate 160, a conductive support layer 170 formed on the bonding layer 150, a channel layer 180 formed on the conductive support layer 170, and a conductive layer. The reflective layer 140 formed on the support layer 170, the ohmic layer 130 formed on the reflective layer 140, the first conductive semiconductor layer 122, the active layer 124, and the second conductive semiconductor layer 126 are formed. The light emitting structure 120, the filling layer 110 formed on the first conductive semiconductor layer 122, the first conductive semiconductor layer 122, and the first electrode 190 formed on the filling layer 110. ) May be included.

As illustrated, the light emitting device may be provided with a bonding layer 150 and a conductive support layer 170 on the support substrate 160.

Conductive support layer 170 is a material selected from the group consisting of nickel (Ni-nickel), platinum (Pt), titanium (Ti), tungsten (W) vanadium (V), iron (Fe), molybdenum (Mo) or These may be made of alloys that are optionally included.

The conductive support layer 170 has an effect of minimizing mechanical damage (breaking or peeling, etc.) that may occur in the manufacturing process of the light emitting device.

The channel layer 180 may be made of an insulating material, and the insulating material may be made of an oxide or nitride which is non-conductive. For example, the channel layer 180 may be formed of a silicon oxide (SiO ₂ ) layer, a silicon nitride (Si ₃ N ₄ ) layer, a titanium oxide (TiOx), or an aluminum oxide (Al ₂ O ₃₎ layer. .

When the light emitting structure 120 is etched, the channel layer 180 protects the components disposed below the channel layer 180 from etching, and stably supports the light emitting device to protect against damages that may occur in the manufacturing process. .

The reflective layer 150 is a metal layer including aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh), or an alloy containing Al, Ag, Pt, or Rh. Can be done. Aluminum or silver may effectively reflect light generated from the active layer 124 to greatly improve the light extraction efficiency of the light emitting device.

In addition, the ohmic layer 130 may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and IGTO (indium). gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn , Pt, Au, Hf may be formed to include, but are not limited to such materials.

The first conductivity-type semiconductor layer 122 may be implemented as a group III-V compound semiconductor doped with a first conductivity type dopant, and the first conductivity type semiconductor layer 112 may be an N-type semiconductor layer. In this case, the first conductivity type dopant is an N type dopant, and may include Si, Ge, Sn, Se, Te, but is not limited thereto. In some embodiments, irregularities may be formed on the surface of the first conductivity-type semiconductor layer 122. The shape of the irregularities according to the present invention is not limited.

In addition, the active layer 124 may be formed by integrating electrons injected through the first conductivity-type semiconductor layer 122 and holes injected through the second conductivity-type semiconductor layer 126 that are formed thereafter to form an active layer (light emitting layer) material. It is a layer that emits light with energy determined by the energy band.

The second conductivity-type semiconductor layer 126 may be a Group III _- V compound semiconductor doped with a second conductivity type dopant, for example, In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ And 1, 0 ≦ x + y ≦ 1). When the second conductive semiconductor layer 126 is a P-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, Ba, and the like as a P-type dopant.

In addition, the filling layer 110 is filled in at least a portion of the irregularities formed on the first conductivity-type semiconductor layer 122.

The filling layer 110 may be formed of a material having a refractive index of 1.3 to 2.5 and a light transmittance of 70% or more. In addition, the filling layer 110 may be made of a non-conductive material, or may be made of a material having a conductivity similar to that of the first conductive semiconductor layer 122.

For example, the filling layer 110 may be formed of an oxide having a light transmittance of 70% or more and a non-conductive material, and may be formed of a silicon oxide (SiO ₂ ) layer, an oxynitride layer, or an aluminum oxide layer.

According to an embodiment, the filling layer 110 may be generated by depositing an insulating material having optical transparency onto the uneven surface formed on the surface of the first conductive semiconductor layer 122 by a chemical vapor deposition method. .

In this case, the thickness of the filling layer 110 may be variously set according to various embodiments. For example, the thickness of the filling layer 110 may be deposited to cover a predetermined ratio of the uneven surface area formed on the surface of the first conductivity-type semiconductor layer 122. Can be. For example, the filling layer 110 may be deposited to a thickness covering 50 to 90% of the uneven surface area of the first conductivity-type semiconductor layer 122.

The first electrode 190 is formed on the first conductive semiconductor layer 122 and the filling layer 110, and the first electrode 190 is formed of molybdenum, chromium (Cr), nickel (Ni), and gold. (Au), aluminum (Al), titanium (Ti), platinum (Pt), vanadium (V), tungsten (W), lead (Pd), copper (Cu), rhodium (Rh) and iridium (Ir) It consists of either a metal or an alloy of these metals.

The first electrode 190 may be positioned on the filling layer 110, and at least a portion thereof may be in contact with the first conductivity type semiconductor layer 122. In this case, the first electrode 190 may be positioned on the filling layer 110 using a mask, and at least a portion thereof may be in contact with the first conductivity-type semiconductor layer 122.

Therefore, a part of the uneven surface area of the first conductivity type semiconductor layer 122 is covered by the filling layer 110, and a part of the uneven surface area is formed on the first conductivity type semiconductor layer 122 and the first electrode 190. You will come across.

Since the filling layer 110 is made of a material having light transmittance that transmits the light generated from the light emitting structure 120, the present invention minimizes the light extraction, while the first electrode 190 is the first conductive semiconductor layer. (122) Stability and reliability of the light emitting device can be improved by preventing the high electric field from being applied to the valleys of the surface of the first conductivity-type semiconductor layer 122 so as not to contact the valleys of the surface irregularities.

In addition, in the present invention, since the first electrode 190 is positioned on the filling layer 110, the first electrode 190 is spaced apart from the active layer 124, thereby increasing the reliability of the light emitting device. .

In particular, when the thickness of the first conductivity-type semiconductor layer 122 becomes thin due to continuous use of the light emitting device, a problem of malfunction of the light emitting device due to the contact between the first electrode 190 and the active layer 124 may become more serious. However, the light emitting device according to the embodiment has the effect of solving this problem.

Detailed description of each configuration will be described in detail with reference to FIGS. 2A to 2K.

2A to 2G show a method of manufacturing the first embodiment of the light emitting device.

The substrate 100 is prepared as shown in FIG. 2A. The substrate 100 may include a conductive substrate or an insulating substrate, for example, at least one of sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga ₂ 0 ₃ . Can be used. An uneven structure may be formed on the substrate 100, but is not limited thereto. Impurities on the surface may be removed by wet cleaning the substrate 100.

In addition, the light emitting structure 120 including the first conductive semiconductor layer 122, the active layer 124, and the second conductive semiconductor layer 126 may be formed on the substrate 100.

In this case, a buffer layer (not shown) may be grown between the light emitting structure 120 and the substrate 100 to mitigate the difference in lattice mismatch and thermal expansion coefficient of the material. The material of the buffer layer may be formed of at least one of Group III-V compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. An undoped semiconductor layer may be formed on the buffer layer, but is not limited thereto.

In addition, the light emitting structure 120 may be grown by vapor deposition such as metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and hydraulic vapor phase epitaxy (HVPE).

The first conductive semiconductor layer 122 may be implemented as a group III-V compound semiconductor doped with a first conductive dopant, and the first conductive semiconductor layer 112 is an N-type semiconductor layer. The first conductive dopant may be an N-type dopant and may include Si, Ge, Sn, Se, or Te, but is not limited thereto.

The first conductive semiconductor layer 122 may be formed of a semiconductor material having a composition formula of Al _x In _y Ga _(1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). It may include. The first conductive semiconductor layer 112 may be formed of any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP. have.

The first conductivity type semiconductor layer 122 may form an N-type GaN layer using a chemical vapor deposition method (CVD), molecular beam epitaxy (MBE), sputtering, or hydroxide vapor phase epitaxy (HVPE). . In addition, the first conductivity type semiconductor layer 122 includes a silane containing n-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and silicon (Si) in the chamber. The gas SiH ₄ may be injected and formed.

The active layer 124 has an energy band inherent in the active layer (light emitting layer) material because electrons injected through the first conductive semiconductor layer 122 and holes injected through the second conductive semiconductor layer 126 formed thereafter meet each other. It is a layer that emits light with energy determined by.

The active layer 124 may be formed of at least one of a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure. For example, the active layer 114 may be formed by injecting trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) to form a multi-quantum well structure. It is not limited to this.

The well layer / barrier layer of the active layer 124 is formed of one or more pair structures of InGaN / GaN, InGaN / InGaN, AlGaN / GaN, InAlGaN / GaN, GaAs, / AlGaAs (InGaAs), GaP / AlGaP (InGaP). It may be, but is not limited to such. The well layer may be formed of a material having a lower band gap than the band gap of the barrier layer.

A conductive cladding layer (not shown) may be formed on or under the active layer 124. The conductive clad layer may be formed of an AlGaN-based semiconductor, and may have a higher band gap than the band gap of the active layer 124.

The second conductivity-type semiconductor layer 126 may be a Group III-V compound semiconductor doped with a second conductivity type dopant, for example, In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, Semiconductor material having a composition formula of 0 ≦ x + y ≦ 1). When the second conductivity type semiconductor layer 126 is a P type semiconductor layer, the second conductivity type dopant may include Mg, Zn, Ca, Sr, Ba, or the like as a P type dopant.

The second conductivity type semiconductor layer 126 is a bicetyl cyclone containing p-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and magnesium (Mg) in the chamber. Pentadienyl magnesium (EtCp ₂ Mg) {Mg (C ₂ H ₅ C ₅ H ₄ ) ₂ } may be injected to form a p-type GaN layer, but is not limited thereto.

In an embodiment, the first conductive semiconductor layer 122 may be a P-type semiconductor layer, and the second conductive semiconductor layer 126 may be an N-type semiconductor layer. In addition, an N-type semiconductor layer (not shown) may be formed on the second conductive semiconductor layer 126 when the semiconductor having a polarity opposite to that of the second conductive type, for example, the second conductive semiconductor layer is a P-type semiconductor layer. have. Accordingly, the light emitting structure 110 may be implemented as any one of an N-P junction structure, a P-N junction structure, an N-P-N junction structure, and a P-N-P junction structure.

2B, the channel layer 180 is stacked on the second conductive half layer 126. Here, the channel layer 180 may be made of an insulating material, and the insulating material may be made of an oxide or nitride which is non-conductive. For example, the channel layer 180 may be formed of a silicon oxide (SiO ₂ ) layer, a silicon nitride (Si ₃ N ₄ ) layer, a titanium oxide (TiOx), or an aluminum oxide (Al ₂ O ₃₎ layer. . The channel layer 180 protects the components disposed below the channel layer 180 from etching during etching of the light emitting structure 120 to be described later, and stably supports the light emitting device to protect them from damage that may occur in the manufacturing process. There is.

The channel layer 180 is etched to form grooves. The groove may be formed by a dry etching process using a mask.

The ohmic layer 130 and the reflective layer 140 are stacked on the second conductive semiconductor layer 126 located in the groove formed as shown in FIG. 2C.

In this case, the ohmic layer 130 may be stacked to a thickness of about 200 angstroms. The ohmic layer 130 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium tin (IGTO). oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZO (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt At least one of Au, Hf, and the like may be formed, and the material is not limited thereto. The ohmic layer 1300 may be formed by sputtering or electron beam deposition.

In addition, the reflective layer 140 may be formed on the ohmic layer 130 to a thickness of about 2,500 ounces. The reflective layer 150 may be formed of a metal layer including aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh), or an alloy containing Al, Ag, Pt, or Rh. have. Aluminum or silver may effectively reflect light generated from the active layer 124 to greatly improve the light extraction efficiency of the light emitting device.

As shown in FIG. 2D, the conductive support layer 170 is formed on the reflective layer. The conductive support layer 170 is a material selected from the group consisting of nickel (Ni-nickel), platinum (Pt), titanium (Ti), tungsten (W) vanadium (V), iron (Fe), molybdenum (Mo). Or they may be made of an alloy optionally included.

In this case, the conductive support layer 170 may be formed using a sputtering deposition method. When using a sputtering deposition method, when ionized atoms are accelerated by an electric field and impinge on the source material of layer 3 170, the atoms of the source material are ejected and deposited. In addition, according to the embodiment, an electrochemical metal deposition method, a bonding method using a eutectic metal, or the like may be used. In some embodiments, the conductive support layer 170 may be formed of a plurality of layers.

The conductive support layer 170 supports the light emitting structure 120 as a whole, thereby minimizing mechanical damage (breaking or peeling, etc.) that may occur in the manufacturing process of the light emitting device.

In addition, the coupling layer 150 may be formed on the conductive support layer 170 to couple the conductive support layer 170 and the support substrate 160 to each other. The bonding layer 150 is a material selected from the group consisting of gold (Au), tin (Sn), indium (In), silver (Ag), nickel (Ni), niobium (Nb), and copper (Cu) or It may be formed of an alloy thereof.

And as shown in FIG. 2E. The support substrate 160 may be formed on the bonding layer 150.

The support substrate 160 may be made of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu), and aluminum (Al) or alloys thereof. Gold (Au), Copper Alloy (Cu Alloy), Nickel (Ni-nickel), Copper-Tungsten (Cu-W), Carrier Wafers (e.g. GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga) ₂ O _3, etc.) may be optionally included. The conductive support substrate 160 may be formed using an electrochemical metal deposition method or a bonding method using a eutectic metal.

In some embodiments, when holes are injected into the second conductive semiconductor layer 126 through the conductive support layer 170, the support substrate 160 may be made of an insulating material. It may be made of nitride. For example, the support substrate 160 may include a silicon oxide (SiO ₂ ) layer, an oxynitride layer, and an aluminum oxide layer.

And, as shown in Figure 2f, the substrate 100 is separated.

The substrate 100 may be removed by a laser lift off (LLO) method using an excimer laser or the like, or may be a dry or wet etching method.

For example, when the laser lift-off method focuses and irradiates excimer laser light having a predetermined wavelength toward the substrate 100, thermal energy is applied to the interface between the substrate 110 and the light emitting structure 120. As the interface is concentrated and separated into gallium and nitrogen molecules, separation of the substrate 100 occurs at a portion where the laser light passes.

As shown in FIG. 2G, the side surface of the light emitting structure 120 is etched. In this case, when a material forming the channel layer 180 is detected by an endpoint detecting method, a portion of the side surface of the light emitting structure 120 may be etched by stopping the etching.

At this time, the etching position may be adjusted so that the channel layer 180 is positioned under the light emitting structure 120 to be etched.

When the light emitting structure 120 is etched, the channel layer 180 protects the components disposed under the channel layer 180 from etching, and stably supports the light emitting device to protect against damages that may occur in the manufacturing process. .

As shown in FIG. 2G, an uneven structure is formed on the first conductivity-type semiconductor layer 122 to improve light extraction efficiency. At this time, the uneven structure can be formed by etching after forming a PEC method or a mask.

In the PEC method, by adjusting the amount of the etchant (for example, KOH or NaOH) and the difference in etching rate due to GaN crystallinity, it is possible to control the shape of the irregularities of the fine size. The uneven structure may be formed periodically or aperiodically.

In addition, according to an embodiment, a two-dimensional photonic crystal may be formed on the surface of the first conductivity-type semiconductor layer 122, and the structure may periodically form at least two dielectrics having different refractive indices at a period of about half the wavelength of light. Can be obtained by arranging. At this time, each dielectric may be provided in the same pattern with each other.

The photonic crystal may control the flow of light by forming a photonic band gap on the surface of the first conductivity type semiconductor layer 122.

The groove and pattern structure of the light emitting structure can increase the light extraction effect by increasing the surface area of the light emitting structure, and the fine concavo-convex structure on the surface can reduce the absorption of light in the light emitting structure, thereby increasing the luminous efficiency.

As illustrated in FIG. 2H, the filling layer 110 may be formed on at least a portion of the unevenness.

The filling layer 110 may be formed of a material having a refractive index of 1.3 to 2.5 and a light transmittance of 70% or more. In addition, the filling layer 110 is made of a non-conductive material, or a material having a conductivity within a predetermined range similar to that of the first conductivity-type semiconductor layer 122, that is, close to the conductivity of the first conductivity-type semiconductor layer 122. It can be configured as. The proximity range may be variously set according to the embodiment.

For example, the filling layer 110 may be formed of a non-conductive oxide having light transmittance, and may be formed of a silicon oxide (SiO ₂ ) layer, an oxynitride layer, or an aluminum oxide layer.

In some embodiments, the filling layer 110 may be formed by depositing a material having a light transmissivity on the uneven surface formed on the surface of the first conductive semiconductor layer 122 by a chemical vapor deposition method.

In this case, the thickness of the filling layer 110 may be variously set according to various embodiments. For example, the thickness of the filling layer 110 may be deposited to cover a predetermined ratio of the uneven surface area formed on the surface of the first conductivity-type semiconductor layer 122. Can be.

For example, the filling layer 110 may be deposited to a thickness covering 50 to 90% of the uneven surface area of the first conductivity-type semiconductor layer 122.

2I, a first electrode 190 may be formed on the first conductive semiconductor layer 122 and the filling layer 110. The first electrode 190 may include molybdenum and chromium. (Cr), nickel (Ni), gold (Au), aluminum (Al), titanium (Ti), platinum (Pt), vanadium (V), tungsten (W), lead (Pd), copper (Cu), rhodium (Rh) and iridium (Ir) made of any one metal or an alloy of these metals.

The first electrode 190 may be positioned on the filling layer 110, and at least a portion thereof may be in contact with the first conductivity type semiconductor layer 122. In this case, the first electrode 190 may be positioned on the filling layer 110 using a mask, and at least a portion thereof may be in contact with the first conductivity-type semiconductor layer 122.

Therefore, a part of the uneven surface area of the first conductivity type semiconductor layer 122 is covered by the filling layer 110, and a part of the uneven surface area is formed on the first conductivity type semiconductor layer 122 and the first electrode 190. You will come across.

Since the filling layer 110 is made of a material having light transmittance that transmits the light generated from the light emitting structure 120, the present invention minimizes the light extraction, while the first electrode 190 is the first conductive semiconductor layer. (122) It is possible to increase the stability and reliability of the light emitting device by preventing the high electric field from being applied to the valley portions 111 of the surface of the first conductivity-type semiconductor layer 122 so as not to contact the valley portions 111 of the surface irregularities. Can be.

In addition, in the present invention, since the first electrode 190 is positioned on the filling layer 110, the first electrode 190 is spaced apart from the active layer 124, thereby increasing the reliability of the light emitting device. .

That is, when the first electrode 190 is directly formed on the uneven surface of the first conductive semiconductor layer 122, the distance between the active layer 124 and the first electrode 190 becomes d1, and the filling layer 110 is formed. When the first electrode 190 is formed on the substrate, the distance between the active layer 124 and the first electrode 190 becomes d2. Since d2 is larger than the thickness of the filling layer 110 than d1, the filling layer 110 is formed. The distance between the first electrode 190 and the active layer 124 is separated by the thickness of.

In particular, when the thickness of the first conductivity-type semiconductor layer 122 becomes thin due to continuous use of the light emitting device, a problem of malfunction of the light emitting device due to the contact between the first electrode 190 and the active layer 124 may become more serious. There is a light emitting device according to the embodiment has the effect of solving this problem.

As shown in FIG. 2J, a passivation layer (or a passivation layer) may be formed on at least a portion of the channel layer 180, the side surface of the light emitting structure 120, the first conductivity-type semiconductor layer 122, and the filling layer 110. Passivation layer 200 may be deposited.

In addition, as shown in FIG. 2K, at least a portion of the channel layer 180, the side surface of the light emitting structure 120, the first conductive semiconductor layer 122, and the filling layer 110 may be disposed on the first electrode. A passivation layer 201 may be deposited on the side and at least a portion of 190.

Here, the passivation layers 200 and 201 may be made of an insulating material, and the insulating material is made of non-conductive oxide or nitride to protect the light emitting structure. As an example, the passivation layer may be formed of a silicon oxide (SiO ₂ ) layer, an oxynitride layer, or an aluminum oxide layer.

3 is a cross-sectional view of a first embodiment of a light emitting device package.

As shown, the light emitting device package according to the above-described embodiments, the package body 320, the first electrode layer 311 and the second electrode layer 312 provided on the package body 320, and the package body ( The light emitting device 300 according to the exemplary embodiment installed in the 320 and electrically connected to the first electrode layer 311 and the second electrode layer 312, and the filler 340 surrounding the light emitting device 300 are included. do.

The package body 320 may include a silicon material, a synthetic resin material, or a metal material. An inclined surface may be formed around the light emitting device 300 to increase light extraction efficiency.

The first electrode layer 311 and the second electrode layer 312 are electrically separated from each other, and provide power to the light emitting device 300. In addition, the first electrode layer 311 and the second electrode layer 312 can increase the light efficiency by reflecting the light generated from the light emitting device 300, the outside of the heat generated from the light emitting device 300 May also act as a drain.

The light emitting device 300 may be installed on the package body 320 or on the first electrode layer 311 or the second electrode layer 312.

The light emitting device 300 may be electrically connected to the first electrode layer 311 and the second electrode layer 312 by any one of a wire method, a flip chip method, or a die bonding method.

The filler 340 may surround and protect the light emitting device 300. In addition, the filler 340 may include a phosphor to change the wavelength of light emitted from the light emitting device 300.

The light emitting device package may mount at least one of the light emitting devices of the above-described embodiments as one or more, but is not limited thereto.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, for example, the lighting system may include a lamp and a street lamp. .

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

100 substrate 110 filling layer
120: light emitting structure 122: first conductive semiconductor layer
124: active layer 126: second conductive semiconductor layer
130: ohmic layer 140: reflective layer
150: bonding layer 160: supporting substrate
170: conductive support layer 180: channel layer
190: first electrode 200 and 201 passivation layer
300: light emitting element 311: first electrode layer
312: second electrode layer 320: package body
340: filling material

Claims (9)

A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
Irregularities formed on the first conductivity type semiconductor layer;
A filling layer filled in at least a portion of the unevenness; And
A first electrode formed on at least a portion of the first conductive semiconductor layer and the filling layer
Light emitting device comprising a. The method of claim 1,
The first electrode is in contact with at least a portion of the filling layer formed on the first conductivity-type semiconductor layer or the irregularities. The method of claim 1,
The filling layer has a refractive index of 1.3 to 2.5, a non-conductive material having a light transmittance of 70% or more, or a light emitting material formed of a material having a predetermined range of conductivity close to the conductivity of the first conductive semiconductor layer and having a light transmittance of 70% or more. device. The method of claim 1,
The filling layer is a light emitting device is filled with a thickness covering 50 to 90% of the surface area of the uneven surface formed on the first conductivity type semiconductor layer. The method of claim 1,
And a passivation layer formed on at least a portion of at least one of the first conductive semiconductor layer, the filling layer, and the first electrode. Forming a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
Forming a filling layer on at least a portion of the unevenness formed on the first conductivity type semiconductor layer; And
Forming a first electrode on at least a portion of the first conductivity type semiconductor layer and the filling layer
Method of manufacturing a light emitting device comprising a. The method of claim 6,
The first electrode is formed on at least a portion of the filling layer, the method of manufacturing a light emitting device in contact with at least a portion of the irregularities formed in the first conductivity-type semiconductor layer. The method of claim 6,
The filling layer has a refractive index of 1.3 to 2.5, a non-conductive material having a light transmittance of 70% or more, or a light emitting material formed of a material having a predetermined range of conductivity close to the conductivity of the first conductive semiconductor layer and having a light transmittance of 70% or more. Method of manufacturing the device. The method of claim 6,
The filling layer is a method of manufacturing a light emitting device is filled with a thickness covering 50 to 90% of the surface area of the uneven surface formed on the first conductivity type semiconductor layer.

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