KR20120050286A - Light emitting device package using quantum dot - Google Patents
Light emitting device package using quantum dot Download PDFInfo
- Publication number
- KR20120050286A KR20120050286A KR1020100111710A KR20100111710A KR20120050286A KR 20120050286 A KR20120050286 A KR 20120050286A KR 1020100111710 A KR1020100111710 A KR 1020100111710A KR 20100111710 A KR20100111710 A KR 20100111710A KR 20120050286 A KR20120050286 A KR 20120050286A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- emitting device
- device package
- wavelength conversion
- quantum dot
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
The present invention relates to a light emitting device package using a quantum dot.
Quantum dots are materials that exhibit quantum confinement effects as nanocrystals of semiconductor materials having a diameter of about 10 nm or less. Quantum dots generate light that is stronger than conventional phosphors in a narrow wavelength band. The emission of quantum dots is generated by the transition of electrons excited by the valence band in the conduction band. Even in the same material, the wavelength varies depending on the particle size. As the size of the quantum dot is smaller, light of a shorter wavelength is emitted, so that light of a desired wavelength range can be obtained by adjusting the size.
These quantum dots remain dispersed in a naturally coordinated form in an organic solvent. If not properly dispersed, or exposed to oxygen or moisture, there is a problem that the luminous efficiency is reduced. To solve this problem, a method of enclosing quantum dots with organic materials has been developed. However, the method of capturing the quantum dots themselves with organic material or wrapping other bandgap materials has problems in terms of process and cost. Accordingly, there is a demand for the development of a method that can use quantum dots that are more stable and have improved luminous performance. For example, in order to solve this problem, attempts have been made to protect quantum dots safely from oxygen or moisture by incorporating organic solvents or polymers in which quantum dots are dispersed inside a polymer cell or a glass cell.
Provided is a light emitting device package that can use a quantum dot in a stable form.
According to an aspect of the present invention,
A package body having a recess; At least one pair of lead frames mounted to the package body; A light emitting device electrically connected to the lead frame and mounted on the recess; An encapsulation part formed in the concave part to encapsulate the light emitting device; A metal reflector positioned around the light emitting element in the recess and reflecting light generated from the light emitting element in a desired direction; And a wavelength conversion part formed on an upper surface of the encapsulation part and including a quantum dot for converting a wavelength of light emitted from the light emitting device.
In one embodiment of the present invention, it may further include a transparent resin layer disposed on the upper surface of the wavelength conversion portion.
In this case, the transparent resin layer may be a silicone or epoxy resin.
In one embodiment of the present invention, it is disposed on the wavelength conversion portion, may further include a protective layer made of transparent glass.
In this case, irregularities may be formed on the surface of the protective layer.
In an embodiment of the present disclosure, a portion of the at least one pair of leadframes may form at least a portion of the metal reflecting portion.
In one embodiment of the present invention, the metal reflector may be formed on the inner surface of the recess of the package body.
In one embodiment of the present invention, the wavelength conversion unit may further include a phosphor.
Another aspect of the invention,
A package body having a recess; At least one pair of leadframes mounted to the package body; A light emitting device electrically connected to the lead frame and mounted on the recess; A wavelength conversion unit formed in the concave portion and including a quantum dot for converting a wavelength of light emitted from the light emitting device; And a metal reflector positioned around the light emitting device in the recess to reflect the light generated from the light emitting device in a desired direction, the metal reflector being made of a material that does not react with the quantum dots. .
In one embodiment of the present invention, the metal reflector may be made of at least one of gold (Au), platinum (Pt) and palladium (Pd).
In one embodiment of the present invention, it may further include a transparent resin layer disposed on the upper surface of the wavelength conversion portion.
In this case, the transparent resin layer may be a silicone or epoxy resin.
In one embodiment of the present invention, it is disposed on the wavelength conversion portion, may further include a protective layer made of transparent glass.
In this case, irregularities may be formed on the surface of the protective layer.
In an embodiment of the present disclosure, a portion of the at least one pair of frames may form at least a portion of the metal reflecting portion.
In one embodiment of the present invention, the metal reflector may be formed on the inner surface of the recess of the package body.
In one embodiment of the present invention, the wavelength conversion unit may further include a phosphor.
In the light emitting device package according to an embodiment of the present invention, by protecting the wavelength conversion unit including a quantum dot from the external moisture or oxygen, and prevents damage caused by heat generated from the light emitting device to provide a light emitting device package having excellent luminous efficiency and stable Can provide.
1 is a cross-sectional view schematically showing a light emitting device package according to an embodiment of the present invention.
2 is a cross-sectional view schematically showing a light emitting device package according to another embodiment of the present invention.
3 is a cross-sectional view schematically showing a light emitting device package according to another embodiment of the present invention.
4 is a cross-sectional view schematically showing a light emitting device package according to another embodiment of the present invention.
5 is a schematic cross-sectional view of a semiconductor light emitting device package according to still another embodiment of the present invention.
6 is a schematic cross-sectional view of a light emitting device package according to still another embodiment of the present invention.
7 is a schematic cross-sectional view of a light emitting device package according to still another embodiment of the present invention.
8 illustrates simulation results of light extraction efficiency of a light emitting device package according to an exemplary embodiment of the present invention.
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.
However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. In addition, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity, and the elements denoted by the same reference numerals in the drawings are the same elements.
1 is a cross-sectional view schematically showing a light emitting device package according to an embodiment of the present invention. Referring to FIG. 1, the light
The
The pair of
Meanwhile, in the present embodiment, only one
In the present embodiment, a part of the pair of
The
In the present exemplary embodiment, the
The
Looking at the
The
On the other hand, the light emission of the
Specifically, as shown in FIG. 1, the
In this case, when the material constituting the
Meanwhile, as shown in FIG. 1, the
2 is a cross-sectional view schematically showing a light emitting device package according to another embodiment of the present invention. The same reference numerals are used for the same configuration. Hereinafter, the description of the same configuration will be omitted and only the changed configuration will be described. Referring to FIG. 2, the
3 is a cross-sectional view schematically showing a light emitting device package according to another embodiment of the present invention. Referring to FIG. 3, the
4 is a cross-sectional view schematically showing a light emitting device package according to another embodiment of the present invention. Unlike the embodiment illustrated in FIG. 3, irregularities may be formed on the surface of the
5 is a schematic cross-sectional view of a semiconductor light emitting device package according to still another embodiment of the present invention. Referring to FIG. 5, the semiconductor light emitting
According to the present embodiment, unlike the embodiment illustrated in FIGS. 1 to 4, a pair of
6 is a schematic cross-sectional view of a light emitting device package according to still another embodiment of the present invention. The light emitting
According to the present exemplary embodiment, the lead frames 210a and 210b provided to the
Although not shown, the
7 is a schematic cross-sectional view of a light emitting device package according to still another embodiment of the present invention. According to the present embodiment, the pair of
8 illustrates simulation results of light extraction efficiency of a light emitting device package according to an exemplary embodiment of the present invention. The horizontal axis represents time, the vertical axis represents light extraction efficiency, and the light extraction efficiency is 100% before the quantum dot and the material forming the lead frame react, that is, immediately after the light emitting device package is manufactured. The change of light extraction efficiency is shown.
The comparative example shows a change in light extraction efficiency with time variation of a light emitting device package including a pair of lead frames, a light emitting device mounted on one of the lead frames, and a wavelength conversion unit formed to encapsulate the light emitting devices. ,
Example 1 includes a pair of lead frames, a light emitting element mounted on one of the lead frames, an encapsulation portion encapsulating the light emitting element, and a wavelength conversion portion formed on the encapsulation portion, according to an embodiment of the present invention. The light extraction efficiency of the package is shown to vary.
Example 2 shows a change in light extraction efficiency of a light emitting device package according to another embodiment of the present invention, further comprising a transparent resin layer formed on the upper surface of the wavelength conversion unit in Example 1.
Referring to FIG. 7, it can be seen that the light emitting device package according to the embodiment of the present invention exhibits improved light extraction efficiency in comparison with the comparative example in all regions regardless of time. In particular, in the case of Example 2 further comprising a transparent resin layer on the upper surface of the wavelength conversion portion, it can be seen that the change in the light extraction efficiency with time change is hardly seen.
The present invention is not limited by the above-described embodiments and the accompanying drawings, but is intended to be limited only by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.
100 and 200: light emitting
120, 220:
131 and 231: metal reflecting portion 141: encapsulation portion
142 and 242: wavelength conversion portion 143: transparent resin layer
144:
151:
150a, b: 1st, 2nd shell
Claims (17)
At least one pair of lead frames mounted to the package body;
A light emitting device electrically connected to the lead frame and mounted on the recess;
An encapsulation part formed in the concave part to encapsulate the light emitting device;
A metal reflector positioned around the light emitting element in the recess and reflecting light generated from the light emitting element in a desired direction; And
And a wavelength conversion part formed on an upper surface of the encapsulation part and including a quantum dot for converting a wavelength of light emitted from the light emitting device.
Light emitting device package further comprises a transparent resin layer disposed on the upper surface of the wavelength conversion portion.
Light emitting device package, characterized in that the transparent resin layer is a silicone or epoxy resin.
The light emitting device package is disposed on the wavelength conversion part, further comprising a protective layer made of transparent glass.
The light emitting device package, characterized in that irregularities formed on the surface of the protective layer.
And a part of the at least one pair of lead frames forms at least a part of the metal reflecting part.
The metal reflector is a light emitting device package, characterized in that formed on the inner surface of the recess of the package body.
The wavelength conversion unit light emitting device package further comprises a phosphor.
At least one pair of leadframes mounted to the package body;
A light emitting device electrically connected to the lead frame and mounted on the recess;
A wavelength conversion unit formed in the concave portion and including a quantum dot for converting a wavelength of light emitted from the light emitting device; And
And a metal reflector positioned around the light emitting device in the recess to reflect the light generated from the light emitting device in a desired direction, the metal reflector being made of a material that does not react with the quantum dots.
The metal reflecting unit comprises at least one of gold (Au), platinum (Pt) and palladium (Pd).
Light emitting device package further comprises a transparent resin layer disposed on the upper surface of the wavelength conversion portion.
The transparent resin layer is a light emitting device package, characterized in that the silicone or epoxy resin.
The light emitting device package is disposed on the wavelength conversion part, further comprising a protective layer made of transparent glass.
The light emitting device package, characterized in that irregularities formed on the surface of the protective layer.
And a portion of the at least one pair of frames forms at least a portion of the metal reflecting portion.
The metal reflector is a light emitting device package, characterized in that formed on the inner surface of the recess of the package body.
The wavelength conversion unit further comprises a phosphor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020100111710A KR20120050286A (en) | 2010-11-10 | 2010-11-10 | Light emitting device package using quantum dot |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020100111710A KR20120050286A (en) | 2010-11-10 | 2010-11-10 | Light emitting device package using quantum dot |
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KR20120050286A true KR20120050286A (en) | 2012-05-18 |
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KR1020100111710A KR20120050286A (en) | 2010-11-10 | 2010-11-10 | Light emitting device package using quantum dot |
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101371134B1 (en) * | 2012-10-31 | 2014-03-07 | 부국전자 주식회사 | Led package |
KR20150089233A (en) * | 2014-01-27 | 2015-08-05 | 엘지이노텍 주식회사 | Light emitting device and lighting systme having thereof |
US9447932B2 (en) | 2014-02-05 | 2016-09-20 | Samsung Display Co., Ltd. | Light-emitting diode package and method of manufacturing the same |
US9812617B2 (en) | 2015-05-26 | 2017-11-07 | Sharp Kabushiki Kaisha | Light-emitting device and image display apparatus |
US9893245B2 (en) | 2014-04-01 | 2018-02-13 | Corning Precision Materials Co., Ltd. | Color-converting substrate for light-emitting diode and method for producing same |
JP2018078171A (en) * | 2016-11-08 | 2018-05-17 | スタンレー電気株式会社 | Semiconductor light-emitting device |
JP2018107298A (en) * | 2016-12-27 | 2018-07-05 | 日亜化学工業株式会社 | Wavelength conversion member and light source device using the same |
CN108281530A (en) * | 2018-01-31 | 2018-07-13 | 惠州市华星光电技术有限公司 | A kind of quantum dot LED, backlight module and display device |
KR20180096486A (en) * | 2017-02-21 | 2018-08-29 | 샤프 가부시키가이샤 | Light-emitting device and image display apparatus |
US10276743B2 (en) | 2017-02-14 | 2019-04-30 | Samsung Electronics Co., Ltd. | Light emitting diode apparatus and manufacturing method thereof |
US10680144B2 (en) | 2017-06-05 | 2020-06-09 | Samsung Electronics Co., Ltd. | Quantum dot glass cell and light-emitting device package including the same |
US10971663B2 (en) | 2016-11-08 | 2021-04-06 | Stanley Electric Co., Ltd. | Semiconductor light emitting device |
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2010
- 2010-11-10 KR KR1020100111710A patent/KR20120050286A/en not_active Application Discontinuation
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101371134B1 (en) * | 2012-10-31 | 2014-03-07 | 부국전자 주식회사 | Led package |
KR20150089233A (en) * | 2014-01-27 | 2015-08-05 | 엘지이노텍 주식회사 | Light emitting device and lighting systme having thereof |
US9447932B2 (en) | 2014-02-05 | 2016-09-20 | Samsung Display Co., Ltd. | Light-emitting diode package and method of manufacturing the same |
US9893245B2 (en) | 2014-04-01 | 2018-02-13 | Corning Precision Materials Co., Ltd. | Color-converting substrate for light-emitting diode and method for producing same |
US9812617B2 (en) | 2015-05-26 | 2017-11-07 | Sharp Kabushiki Kaisha | Light-emitting device and image display apparatus |
US10971663B2 (en) | 2016-11-08 | 2021-04-06 | Stanley Electric Co., Ltd. | Semiconductor light emitting device |
JP2018078171A (en) * | 2016-11-08 | 2018-05-17 | スタンレー電気株式会社 | Semiconductor light-emitting device |
JP2018107298A (en) * | 2016-12-27 | 2018-07-05 | 日亜化学工業株式会社 | Wavelength conversion member and light source device using the same |
US10276743B2 (en) | 2017-02-14 | 2019-04-30 | Samsung Electronics Co., Ltd. | Light emitting diode apparatus and manufacturing method thereof |
US10734544B2 (en) | 2017-02-14 | 2020-08-04 | Samsung Electronics Co., Ltd. | Light emitting diode apparatus and manufacturing method thereof |
KR20180096486A (en) * | 2017-02-21 | 2018-08-29 | 샤프 가부시키가이샤 | Light-emitting device and image display apparatus |
US10680144B2 (en) | 2017-06-05 | 2020-06-09 | Samsung Electronics Co., Ltd. | Quantum dot glass cell and light-emitting device package including the same |
WO2019148599A1 (en) * | 2018-01-31 | 2019-08-08 | 惠州市华星光电技术有限公司 | Quantum dot led, backlight module and display apparatus |
CN108281530A (en) * | 2018-01-31 | 2018-07-13 | 惠州市华星光电技术有限公司 | A kind of quantum dot LED, backlight module and display device |
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