KR20120043646A - Solvent for printing - Google Patents
Solvent for printing Download PDFInfo
- Publication number
- KR20120043646A KR20120043646A KR20110109075A KR20110109075A KR20120043646A KR 20120043646 A KR20120043646 A KR 20120043646A KR 20110109075 A KR20110109075 A KR 20110109075A KR 20110109075 A KR20110109075 A KR 20110109075A KR 20120043646 A KR20120043646 A KR 20120043646A
- Authority
- KR
- South Korea
- Prior art keywords
- solvent
- pattern
- plasma display
- printing
- electronic paper
- Prior art date
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- 239000002904 solvent Substances 0.000 title claims abstract description 68
- 238000007639 printing Methods 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 100
- 239000000203 mixture Substances 0.000 claims abstract description 63
- -1 propylene glycol dialkyl ether Chemical class 0.000 claims abstract description 33
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000010409 thin film Substances 0.000 claims abstract description 20
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 19
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 7
- 239000011347 resin Substances 0.000 claims description 24
- 229920005989 resin Polymers 0.000 claims description 24
- 230000007261 regionalization Effects 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 18
- 239000011230 binding agent Substances 0.000 claims description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000004925 Acrylic resin Substances 0.000 claims description 5
- 229920000178 Acrylic resin Polymers 0.000 claims description 5
- 238000007646 gravure printing Methods 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 238000000813 microcontact printing Methods 0.000 claims description 5
- 238000007645 offset printing Methods 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 239000012461 cellulose resin Substances 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 230000006866 deterioration Effects 0.000 abstract description 2
- 229910000831 Steel Inorganic materials 0.000 abstract 1
- 239000010959 steel Substances 0.000 abstract 1
- 239000001856 Ethyl cellulose Substances 0.000 description 12
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 12
- 229920001249 ethyl cellulose Polymers 0.000 description 12
- 235000019325 ethyl cellulose Nutrition 0.000 description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 10
- 239000000654 additive Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 4
- QMGJMGFZLXYHCR-UHFFFAOYSA-N 1-(2-butoxypropoxy)butane Chemical compound CCCCOCC(C)OCCCC QMGJMGFZLXYHCR-UHFFFAOYSA-N 0.000 description 4
- 239000012153 distilled water Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 239000012074 organic phase Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 229920002678 cellulose Polymers 0.000 description 3
- 239000001913 cellulose Substances 0.000 description 3
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 3
- 239000004210 ether based solvent Substances 0.000 description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 3
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- VPBZZPOGZPKYKX-UHFFFAOYSA-N 1,2-diethoxypropane Chemical compound CCOCC(C)OCC VPBZZPOGZPKYKX-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- KJOVIRMWPFJSTR-UHFFFAOYSA-N 1-butan-2-yloxypropan-2-ol Chemical compound CCC(C)OCC(C)O KJOVIRMWPFJSTR-UHFFFAOYSA-N 0.000 description 2
- HGERSUQOJQWENV-UHFFFAOYSA-N 1-pentan-2-yloxypropan-2-ol Chemical compound CCCC(C)OCC(C)O HGERSUQOJQWENV-UHFFFAOYSA-N 0.000 description 2
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 description 2
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 2
- VATRWWPJWVCZTA-UHFFFAOYSA-N 3-oxo-n-[2-(trifluoromethyl)phenyl]butanamide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1C(F)(F)F VATRWWPJWVCZTA-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 150000005215 alkyl ethers Chemical class 0.000 description 2
- QUKGYYKBILRGFE-UHFFFAOYSA-N benzyl acetate Chemical compound CC(=O)OCC1=CC=CC=C1 QUKGYYKBILRGFE-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- XUPYJHCZDLZNFP-UHFFFAOYSA-N butyl butanoate Chemical compound CCCCOC(=O)CCC XUPYJHCZDLZNFP-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- MTZQAGJQAFMTAQ-UHFFFAOYSA-N ethyl benzoate Chemical compound CCOC(=O)C1=CC=CC=C1 MTZQAGJQAFMTAQ-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 2
- UODXCYZDMHPIJE-UHFFFAOYSA-N menthanol Chemical compound CC1CCC(C(C)(C)O)CC1 UODXCYZDMHPIJE-UHFFFAOYSA-N 0.000 description 2
- LPEKGGXMPWTOCB-UHFFFAOYSA-N methyl 2-hydroxypropionate Chemical compound COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- ZWRUINPWMLAQRD-UHFFFAOYSA-N nonan-1-ol Chemical compound CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 239000003208 petroleum Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- URAYPUMNDPQOKB-UHFFFAOYSA-N triacetin Chemical compound CC(=O)OCC(OC(C)=O)COC(C)=O URAYPUMNDPQOKB-UHFFFAOYSA-N 0.000 description 2
- NOOLISFMXDJSKH-UTLUCORTSA-N (+)-Neomenthol Chemical compound CC(C)[C@@H]1CC[C@@H](C)C[C@@H]1O NOOLISFMXDJSKH-UTLUCORTSA-N 0.000 description 1
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 description 1
- RYNQKSJRFHJZTK-UHFFFAOYSA-N (3-methoxy-3-methylbutyl) acetate Chemical compound COC(C)(C)CCOC(C)=O RYNQKSJRFHJZTK-UHFFFAOYSA-N 0.000 description 1
- PVMMVWNXKOSPRB-UHFFFAOYSA-N 1,2-dipropoxypropane Chemical compound CCCOCC(C)OCCC PVMMVWNXKOSPRB-UHFFFAOYSA-N 0.000 description 1
- XUKSWKGOQKREON-UHFFFAOYSA-N 1,4-diacetoxybutane Chemical compound CC(=O)OCCCCOC(C)=O XUKSWKGOQKREON-UHFFFAOYSA-N 0.000 description 1
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 description 1
- LAVARTIQQDZFNT-UHFFFAOYSA-N 1-(1-methoxypropan-2-yloxy)propan-2-yl acetate Chemical compound COCC(C)OCC(C)OC(C)=O LAVARTIQQDZFNT-UHFFFAOYSA-N 0.000 description 1
- UOWSVNMPHMJCBZ-UHFFFAOYSA-N 1-[2-(2-butoxypropoxy)propoxy]butane Chemical compound CCCCOCC(C)OCC(C)OCCCC UOWSVNMPHMJCBZ-UHFFFAOYSA-N 0.000 description 1
- QPHFJZRSMXHTAW-UHFFFAOYSA-N 1-[2-(2-methoxypropoxy)propoxy]butane Chemical compound CCCCOCC(C)OCC(C)OC QPHFJZRSMXHTAW-UHFFFAOYSA-N 0.000 description 1
- HNAGHMKIPMKKBB-UHFFFAOYSA-N 1-benzylpyrrolidine-3-carboxamide Chemical compound C1C(C(=O)N)CCN1CC1=CC=CC=C1 HNAGHMKIPMKKBB-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- FUWDFGKRNIDKAE-UHFFFAOYSA-N 1-butoxypropan-2-yl acetate Chemical compound CCCCOCC(C)OC(C)=O FUWDFGKRNIDKAE-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- ZIKLJUUTSQYGQI-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxypropoxy)propane Chemical compound CCOCC(C)OCC(C)OCC ZIKLJUUTSQYGQI-UHFFFAOYSA-N 0.000 description 1
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- ZGXWWUDXUOKJRP-UHFFFAOYSA-N 1-hexan-2-yloxypropan-2-ol Chemical compound CCCCC(C)OCC(C)O ZGXWWUDXUOKJRP-UHFFFAOYSA-N 0.000 description 1
- BPIUIOXAFBGMNB-UHFFFAOYSA-N 1-hexoxyhexane Chemical compound CCCCCCOCCCCCC BPIUIOXAFBGMNB-UHFFFAOYSA-N 0.000 description 1
- RERATEUBWLKDFE-UHFFFAOYSA-N 1-methoxy-2-[2-(2-methoxypropoxy)propoxy]propane Chemical compound COCC(C)OCC(C)OCC(C)OC RERATEUBWLKDFE-UHFFFAOYSA-N 0.000 description 1
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 1
- HFZLSTDPRQSZCQ-UHFFFAOYSA-N 1-pyrrolidin-3-ylpyrrolidine Chemical compound C1CCCN1C1CNCC1 HFZLSTDPRQSZCQ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- RZXAHVCTRLTLNA-UHFFFAOYSA-N 2-(2-methoxypropoxy)-1-propoxypropane Chemical compound CCCOCC(C)OCC(C)OC RZXAHVCTRLTLNA-UHFFFAOYSA-N 0.000 description 1
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 description 1
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 description 1
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 description 1
- HBNHCGDYYBMKJN-UHFFFAOYSA-N 2-(4-methylcyclohexyl)propan-2-yl acetate Chemical compound CC1CCC(C(C)(C)OC(C)=O)CC1 HBNHCGDYYBMKJN-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- CBECDWUDYQOTSW-UHFFFAOYSA-N 2-ethylbut-3-enal Chemical compound CCC(C=C)C=O CBECDWUDYQOTSW-UHFFFAOYSA-N 0.000 description 1
- BEKXVQRVZUYDLK-UHFFFAOYSA-N 2-hydroxyethyl 2-methylpropanoate Chemical compound CC(C)C(=O)OCCO BEKXVQRVZUYDLK-UHFFFAOYSA-N 0.000 description 1
- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 description 1
- WHFKYDMBUMLWDA-UHFFFAOYSA-N 2-phenoxyethyl acetate Chemical compound CC(=O)OCCOC1=CC=CC=C1 WHFKYDMBUMLWDA-UHFFFAOYSA-N 0.000 description 1
- YEYKMVJDLWJFOA-UHFFFAOYSA-N 2-propoxyethanol Chemical compound CCCOCCO YEYKMVJDLWJFOA-UHFFFAOYSA-N 0.000 description 1
- QMAQLCVJIYANPZ-UHFFFAOYSA-N 2-propoxyethyl acetate Chemical compound CCCOCCOC(C)=O QMAQLCVJIYANPZ-UHFFFAOYSA-N 0.000 description 1
- MPAGVACEWQNVQO-UHFFFAOYSA-N 3-acetyloxybutyl acetate Chemical compound CC(=O)OC(C)CCOC(C)=O MPAGVACEWQNVQO-UHFFFAOYSA-N 0.000 description 1
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 1
- UNDXPKDBFOOQFC-UHFFFAOYSA-N 4-[2-nitro-4-(trifluoromethyl)phenyl]morpholine Chemical compound [O-][N+](=O)C1=CC(C(F)(F)F)=CC=C1N1CCOCC1 UNDXPKDBFOOQFC-UHFFFAOYSA-N 0.000 description 1
- LMLBDDCTBHGHEO-UHFFFAOYSA-N 4-methoxybutyl acetate Chemical compound COCCCCOC(C)=O LMLBDDCTBHGHEO-UHFFFAOYSA-N 0.000 description 1
- IEAJQNJSHYCMEK-UHFFFAOYSA-N 5-methoxy-2,5-dimethylhexanoic acid Chemical compound COC(C)(C)CCC(C)C(O)=O IEAJQNJSHYCMEK-UHFFFAOYSA-N 0.000 description 1
- ZMFWEWMHABZQNB-UHFFFAOYSA-N 6-acetyloxyhexyl acetate Chemical compound CC(=O)OCCCCCCOC(C)=O ZMFWEWMHABZQNB-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- FRGYWHGLCQBTBJ-UHFFFAOYSA-N C(CCCC)OCC(OCC(C)OC)C Chemical compound C(CCCC)OCC(OCC(C)OC)C FRGYWHGLCQBTBJ-UHFFFAOYSA-N 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YYLLIJHXUHJATK-UHFFFAOYSA-N Cyclohexyl acetate Chemical compound CC(=O)OC1CCCCC1 YYLLIJHXUHJATK-UHFFFAOYSA-N 0.000 description 1
- NOOLISFMXDJSKH-UHFFFAOYSA-N DL-menthol Natural products CC(C)C1CCC(C)CC1O NOOLISFMXDJSKH-UHFFFAOYSA-N 0.000 description 1
- IEPRKVQEAMIZSS-UHFFFAOYSA-N Di-Et ester-Fumaric acid Natural products CCOC(=O)C=CC(=O)OCC IEPRKVQEAMIZSS-UHFFFAOYSA-N 0.000 description 1
- IEPRKVQEAMIZSS-WAYWQWQTSA-N Diethyl maleate Chemical compound CCOC(=O)\C=C/C(=O)OCC IEPRKVQEAMIZSS-WAYWQWQTSA-N 0.000 description 1
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- 239000001293 FEMA 3089 Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
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- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RNFAKTRFMQEEQE-UHFFFAOYSA-N Tripropylene glycol butyl ether Chemical compound CCCCOC(CC)OC(C)COC(O)CC RNFAKTRFMQEEQE-UHFFFAOYSA-N 0.000 description 1
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- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
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- 230000004888 barrier function Effects 0.000 description 1
- 229940007550 benzyl acetate Drugs 0.000 description 1
- 235000019445 benzyl alcohol Nutrition 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- OBNCKNCVKJNDBV-UHFFFAOYSA-N butanoic acid ethyl ester Natural products CCCC(=O)OCC OBNCKNCVKJNDBV-UHFFFAOYSA-N 0.000 description 1
- PWLNAUNEAKQYLH-UHFFFAOYSA-N butyric acid octyl ester Natural products CCCCCCCCOC(=O)CCC PWLNAUNEAKQYLH-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
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- 239000003054 catalyst Substances 0.000 description 1
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- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
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- UYAAVKFHBMJOJZ-UHFFFAOYSA-N diimidazo[1,3-b:1',3'-e]pyrazine-5,10-dione Chemical compound O=C1C2=CN=CN2C(=O)C2=CN=CN12 UYAAVKFHBMJOJZ-UHFFFAOYSA-N 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 231100000584 environmental toxicity Toxicity 0.000 description 1
- 150000002168 ethanoic acid esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- BCHOKJRLDTXCSF-UHFFFAOYSA-N ethyl 2-acetyloxypropanoate Chemical compound CCOC(=O)C(C)OC(C)=O BCHOKJRLDTXCSF-UHFFFAOYSA-N 0.000 description 1
- CKSRFHWWBKRUKA-UHFFFAOYSA-N ethyl 2-ethoxyacetate Chemical compound CCOCC(=O)OCC CKSRFHWWBKRUKA-UHFFFAOYSA-N 0.000 description 1
- ZANNOFHADGWOLI-UHFFFAOYSA-N ethyl 2-hydroxyacetate Chemical compound CCOC(=O)CO ZANNOFHADGWOLI-UHFFFAOYSA-N 0.000 description 1
- FJAKCEHATXBFJT-UHFFFAOYSA-N ethyl 2-oxobutanoate Chemical compound CCOC(=O)C(=O)CC FJAKCEHATXBFJT-UHFFFAOYSA-N 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- IJUHLFUALMUWOM-UHFFFAOYSA-N ethyl 3-methoxypropanoate Chemical compound CCOC(=O)CCOC IJUHLFUALMUWOM-UHFFFAOYSA-N 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 229940117360 ethyl pyruvate Drugs 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000001087 glyceryl triacetate Substances 0.000 description 1
- 235000013773 glyceryl triacetate Nutrition 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000010416 ion conductor Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 235000001510 limonene Nutrition 0.000 description 1
- 229940087305 limonene Drugs 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229940041616 menthol Drugs 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- HSDFKDZBJMDHFF-UHFFFAOYSA-N methyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OC HSDFKDZBJMDHFF-UHFFFAOYSA-N 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- CWKLZLBVOJRSOM-UHFFFAOYSA-N methyl pyruvate Chemical compound COC(=O)C(C)=O CWKLZLBVOJRSOM-UHFFFAOYSA-N 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- UUIQMZJEGPQKFD-UHFFFAOYSA-N n-butyric acid methyl ester Natural products CCCC(=O)OC UUIQMZJEGPQKFD-UHFFFAOYSA-N 0.000 description 1
- JTHNLKXLWOXOQK-UHFFFAOYSA-N n-propyl vinyl ketone Natural products CCCC(=O)C=C JTHNLKXLWOXOQK-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- ILPVOWZUBFRIAX-UHFFFAOYSA-N propyl 2-oxopropanoate Chemical compound CCCOC(=O)C(C)=O ILPVOWZUBFRIAX-UHFFFAOYSA-N 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- HUAZGNHGCJGYNP-UHFFFAOYSA-N propyl butyrate Chemical compound CCCOC(=O)CCC HUAZGNHGCJGYNP-UHFFFAOYSA-N 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 229940116423 propylene glycol diacetate Drugs 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229960002622 triacetin Drugs 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
- C09D11/033—Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/03—Ethers having all ether-oxygen atoms bound to acyclic carbon atoms
- C07C43/04—Saturated ethers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/52—Electrically conductive inks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Ink Jet Recording Methods And Recording Media Thereof (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
본 발명은 흡습하기 어렵고 수지 용해성이 우수한, 인쇄법에 의해 패턴 형성할 때에 이용되는 용제 또는 용제 조성물에 관한 것이다.This invention relates to the solvent or solvent composition used at the time of pattern formation by the printing method which is hard to absorb moisture and excellent in resin solubility.
종래, 배선 기판이나 디스플레이 등의 전자 부품의 패턴 형성은, 포토리소그래피라고 불리는 방법으로 형성되는 경우가 많았다. 포토리소그래피는 페이스트 조성물을 기판에 도포하고, 미세 패턴을 노광하여 소부하고, 에칭으로 불필요한 부분을 제거하여 패턴 형성을 행하는 방법이다. 그러나, 일반적으로 에칭 폐액 처리 설비를 필요로 하는 것으로부터 장치 자체가 거대해져서, 거액의 설비 투자가 필요하고, 재료의 사용 효율도 나쁘고, 제조 공정이 많기 때문에 생산성이 나쁘다는 것이 문제였다. 또한, 장치의 용량이 제한되기 때문에 대면적 기판에의 패턴 형성은 곤란하였다.Conventionally, the pattern formation of electronic components, such as a wiring board and a display, was formed by the method called photolithography in many cases. Photolithography is a method of apply | coating a paste composition to a board | substrate, exposing and baking a micropattern, and removing a unnecessary part by an etching and performing pattern formation. However, in general, since the apparatus itself becomes huge because it requires an etching waste liquid treatment facility, a large amount of equipment investment is required, the use efficiency of materials is bad, and there are many manufacturing processes, and it was a problem that productivity was bad. In addition, since the capacity of the apparatus is limited, pattern formation on a large area substrate was difficult.
그 때문에, 최근에 패턴 형성 방법으로서는, 거대한 장치가 불필요하고, 재료의 사용 효율이 좋고, 대면적 기판에의 대응도 용이한 잉크젯법, 스크린 인쇄법, 철판 인쇄법, 오프셋 인쇄법, 그라비아 인쇄법, 마이크로컨택트 인쇄법, 나노임프린트법 등의 인쇄법이 주목받고 있다. 인쇄법에 이용되는 페이스트 조성물에 사용되는 용제로서는, 디에틸렌글리콜디메틸에테르나 디에틸렌글리콜디부틸에테르 등의 에틸렌글리콜에테르계 용매나, 디프로필렌글리콜디메틸에테르, 디프로필렌글리콜디에틸에테르, 디프로필렌글리콜디프로필에테르, 디프로필렌글리콜디부틸에테르 등의 프로필렌글리콜에테르계 용매 등이 사용되는 예가 많다. 그러나, 에틸렌글리콜에테르계 용매는 생태 독성을 갖기 때문에 사용하기 어렵다는 문제가 있었다(비특허문헌 1).Therefore, in recent years, as a pattern formation method, a huge apparatus is unnecessary, the use efficiency of a material is good, and the inkjet method, the screen printing method, the iron plate printing method, the offset printing method, the gravure printing method which are easy to respond to a large area board | substrate Attention has been paid to printing methods such as the microcontact printing method and the nanoimprint method. As a solvent used for the paste composition used for the printing method, Ethylene glycol ether solvents, such as diethylene glycol dimethyl ether and diethylene glycol dibutyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, dipropylene glycol In many cases, propylene glycol ether solvents such as dipropyl ether and dipropylene glycol dibutyl ether are used. However, ethylene glycol ether solvents have a problem that they are difficult to use because they have ecotoxicity (Non-Patent Document 1).
한편, 프로필렌글리콜에테르계 용매에 대해서, 태양 전지를 구성하는 소자를 형성하는 페이스트 조성물에 용제로서 사용하는 것이 알려져 있고(특허문헌 1), 특허문헌 2에는, 프로필렌글리콜디알킬에테르 중에서도 친유성이 강한 프로필렌글리콜디부틸에테르를 사용하는 것이 기재되어 있다.On the other hand, it is known to use it as a solvent for the paste composition which forms the element which comprises a solar cell with respect to a propylene glycol ether solvent (patent document 1), and patent document 2 has strong lipophilic property among propylene glycol dialkyl ethers. The use of propylene glycol dibutyl ether is described.
또한, 유기 박막 트랜지스터, 전자 페이퍼 및 플라즈마 디스플레이를 구성하는 소자를 형성하는 페이스트 조성물에 있어서는, 프로필렌글리콜디메틸에테르, 프로필렌글리콜디에틸에테르, 프로필렌글리콜디프로필에테르, 프로필렌글리콜디부틸에테르 등의 프로필렌글리콜디알킬에테르가 용제로서 이용되는 것이 알려져 있다(특허문헌 3, 4, 5).Moreover, in the paste composition which forms the element which comprises an organic thin film transistor, an electronic paper, and a plasma display, propylene glycol di, such as propylene glycol dimethyl ether, propylene glycol diethyl ether, propylene glycol dipropyl ether, and propylene glycol dibutyl ether It is known that alkyl ether is used as a solvent (patent documents 3, 4, 5).
프로필렌글리콜디알킬에테르는 휘발성이 우수한데, 특히 프로필렌글리콜디메틸에테르는 친수성이 높고 흡습하기 쉽기 때문에, 태양 전지, 유기 박막 트랜지스터, 전자 페이퍼 또는 플라즈마 디스플레이를 구성하는 소자 패턴을 형성하는 페이스트 조성물에 용제로서 사용하면 소자를 열화시킬 우려가 있고, 한편 프로필렌글리콜디부틸에테르는 친유성이 높고 흡습성은 낮지만, 페이스트 조성물에 함유하는 에틸셀룰로오스나 아크릴 수지 등의 결합제 수지의 용해성이 낮기 때문에, 인쇄용 용제로서 사용하는 것은 곤란한 것을 알 수 있었다.Propylene glycol dialkyl ether is excellent in volatility, in particular propylene glycol dimethyl ether is high in hydrophilicity and easy to absorb moisture, so as a solvent in the paste composition for forming a device pattern constituting a solar cell, an organic thin film transistor, an electronic paper or a plasma display. When used, the device may deteriorate. On the other hand, propylene glycol dibutyl ether has high lipophilic properties and low hygroscopicity. However, it is used as a printing solvent because the solubility of binder resins such as ethyl cellulose and acrylic resin contained in the paste composition is low. It was difficult to do.
따라서, 본 발명의 목적은 결합제 수지 등의 수지 첨가물의 용해성이 높고, 흡습성이 낮은 태양 전지, 유기 박막 트랜지스터, 전자 페이퍼 또는 플라즈마 디스플레이 패턴 인쇄용 용제 또는 용제 조성물을 제공하는 데에 있다.Accordingly, an object of the present invention is to provide a solvent or solvent composition for printing a solar cell, an organic thin film transistor, an electronic paper, or a plasma display pattern printing having high solubility and low hygroscopicity of resin additives such as binder resin.
본 발명의 다른 목적은 상기 태양 전지, 유기 박막 트랜지스터, 전자 페이퍼 또는 플라즈마 디스플레이 패턴 인쇄용 용제 또는 용제 조성물을 함유하는 태양 전지, 유기 박막 트랜지스터, 전자 페이퍼 또는 플라즈마 디스플레이 패턴 형성용 페이스트 조성물을 제공하는 데에 있다.Another object of the present invention is to provide a paste composition for forming a solar cell, an organic thin film transistor, an electronic paper or a plasma display pattern containing the solvent or solvent composition for printing the solar cell, an organic thin film transistor, an electronic paper or a plasma display pattern. have.
본 발명의 또 다른 목적은 상기 태양 전지, 유기 박막 트랜지스터, 전자 페이퍼 또는 플라즈마 디스플레이 패턴 형성용 페이스트 조성물을 사용하여 패턴 형성을 행하는 패턴 형성 방법을 제공하는 데에 있다.It is still another object of the present invention to provide a pattern forming method for forming a pattern by using the paste composition for forming a solar cell, an organic thin film transistor, an electronic paper, or a plasma display pattern.
본 발명자 등은 상기 과제를 해결하기 위해서 예의 검토한 결과, 프로필렌글리콜디알킬에테르의 한쪽의 말단 알킬기가 메틸기이고, 또 다른 한쪽의 말단 알킬기가 직쇄상 또는 분지쇄상의 C3 -5 알킬기인 화합물은, 수지 첨가물의 용해성 및 흡습성의 균형이 우수한 것, 상기 화합물을 태양 전지, 유기 박막 트랜지스터, 전자 페이퍼 또는 플라즈마 디스플레이를 구성하는 소자 패턴을 형성할 때에 용제로서 사용하면, 인쇄법에 의해 소자 패턴의 형성을 행하기에 충분한 결합제 수지 용해성을 발휘할 수 있고, 또한 흡습에 의해 열화하기 어려운 소자를 형성할 수 있는 것을 발견하였다. 본 발명은 이들 지견에 기초하여 완성시킨 것이다.The present inventors have intensively studied a result, propylene glycol and the end group on one side, a methyl group of an alkyl ether, and a terminal alkyl group and the other terminal of a straight chain or branched chain C 3 -5 alkyl group is to solve the aforementioned problems Excellent in the balance of the solubility and hygroscopicity of the resin additive, and when the compound is used as a solvent when forming a device pattern constituting a solar cell, an organic thin film transistor, an electronic paper or a plasma display, the formation of the device pattern by a printing method. It was found that sufficient binder resin solubility can be exerted to perform the step, and an element hardly deteriorated by moisture absorption can be formed. This invention is completed based on these knowledge.
즉, 본 발명은 태양 전지, 유기 박막 트랜지스터(이후, 「유기 TFT」라고 칭하는 경우가 있음), 전자 페이퍼 또는 플라즈마 디스플레이를 구성하는 소자 패턴을 인쇄법에 의해 형성할 때에 사용하는 용제 또는 용제 조성물로서, 프로필렌글리콜디알킬에테르의 2개의 말단 알킬기 중 한쪽이 메틸기이고, 다른 한쪽이 탄소수 3 내지 5의 직쇄상 또는 분지쇄상 알킬기인 화합물을 포함하는 것을 특징으로 하는 태양 전지, 유기 박막 트랜지스터, 전자 페이퍼 또는 플라즈마 디스플레이 패턴 인쇄용 용제 또는 용제 조성물(이후, 간단히 「패턴 인쇄용 용제 또는 용제 조성물」이라고 칭하는 경우가 있음)을 제공한다.That is, this invention is a solvent or solvent composition used when forming the element pattern which comprises a solar cell, an organic thin film transistor (henceforth "organic TFT"), an electronic paper, or a plasma display by the printing method. And a compound in which one of the two terminal alkyl groups of propylene glycol dialkyl ether is a methyl group and the other is a linear or branched alkyl group having 3 to 5 carbon atoms, or a solar cell, an organic thin film transistor, an electronic paper, or A solvent or solvent composition for plasma display pattern printing (hereinafter, simply referred to as "pattern printing solvent or solvent composition") is provided.
상기 인쇄법으로서는, 잉크젯법, 스크린 인쇄법, 철판 인쇄법, 오프셋 인쇄법, 그라비아 인쇄법, 마이크로컨택트 인쇄법, 나노임프린트법으로 이루어지는 군으로부터 선택되는 적어도 1종의 방법이 바람직하다.As the printing method, at least one method selected from the group consisting of an inkjet method, a screen printing method, an iron plate printing method, an offset printing method, a gravure printing method, a microcontact printing method and a nanoimprint method is preferable.
본 발명은 또한 상기 패턴 인쇄용 용제 또는 용제 조성물과 결합제 수지를 적어도 함유하는 태양 전지, 유기 박막 트랜지스터, 전자 페이퍼 또는 플라즈마 디스플레이 패턴 형성용 페이스트 조성물(이후, 간단히 「패턴 형성용 페이스트 조성물」이라고 칭하는 경우가 있음)을 제공한다.The present invention further relates to a solar cell, an organic thin film transistor, an electronic paper, or a plasma display pattern forming paste composition (hereinafter, simply referred to as a "pattern forming paste composition") containing at least the pattern printing solvent or the solvent composition and the binder resin. Is provided).
상기 결합제 수지로서는 셀룰로오스계 수지 및/또는 아크릴계 수지가 바람직하다.As said binder resin, cellulose resin and / or acrylic resin are preferable.
본 발명은 또한 태양 전지, 유기 TFT, 전자 페이퍼 또는 플라즈마 디스플레이를 구성하는 소자의 패턴 형성 방법으로서, 기판 상에 상기 태양 전지, 유기 박막 트랜지스터, 전자 페이퍼 또는 플라즈마 디스플레이 패턴 형성용 페이스트 조성물을 인쇄법을 이용하여 도포함으로써 패턴층을 형성하는 공정과, 상기 패턴층을 경화 또는 소성하는 공정을 갖는 것을 특징으로 하는 패턴 형성 방법을 제공한다.The present invention also provides a method for forming a pattern of a device constituting a solar cell, an organic TFT, an electronic paper or a plasma display, the method of printing a paste composition for forming the solar cell, an organic thin film transistor, an electronic paper or a plasma display pattern on a substrate. It provides the pattern formation method characterized by having the process of forming a pattern layer by apply | coating using it, and the process of hardening or baking the said pattern layer.
본 발명의 패턴 인쇄용 용제 또는 용제 조성물은 상기 프로필렌글리콜디알킬에테르의 2개의 말단 알킬기 중 한쪽이 메틸기이고, 다른 한쪽이 탄소수 3 내지 5의 직쇄상 또는 분지쇄상 알킬기인 화합물을 함유하기 때문에, 결합제 수지 등의 수지 첨가물의 용해성이 우수하고, 또한 매우 흡습성이 낮다.Since the solvent or solvent composition for pattern printing of this invention contains the compound whose one of the two terminal alkyl groups of the said propylene glycol dialkyl ether is a methyl group, and the other is a C3-C5 linear or branched alkyl group, binder resin It is excellent in the solubility of resin additives, such as these, and its very hygroscopicity is low.
그 때문에, 본 발명의 패턴 인쇄용 용제 또는 용제 조성물을 함유하는 패턴 형성용 페이스트 조성물은 대면적 및/또는 플렉시블한 기재에 대해서도, 인쇄법에 의해 효율적으로 균일하게 도포할 수 있고, 태양 전지, 유기 TFT, 전자 페이퍼 또는 플라즈마 디스플레이 등을 구성하는 소자의 제조에 있어서, 미세한 소자 패턴을 고정밀도로 형성할 수 있다. 또한, 흡습하기 어렵기 때문에, 습기에 의한 소자의 열화를 억제할 수 있다.Therefore, the pattern formation paste composition containing the solvent for pattern printing or the solvent composition of this invention can be apply | coated efficiently and uniformly also to a large area and / or a flexible base material by the printing method, A solar cell, an organic TFT In the production of devices constituting electronic paper, plasma displays, and the like, fine device patterns can be formed with high accuracy. In addition, since it is difficult to absorb moisture, deterioration of the device due to moisture can be suppressed.
[패턴 인쇄용 용제 또는 용제 조성물][Solvent or Solvent Composition for Pattern Printing]
본 발명에 따른 패턴 인쇄용 용제 또는 용제 조성물은 태양 전지, 유기 TFT, 전자 페이퍼 또는 플라즈마 디스플레이를 구성하는 소자를 인쇄법에 의해 형성할 때에 사용하는 용제 또는 용제 조성물로서, 프로필렌글리콜디알킬에테르의 2개의 말단 알킬기 중 한쪽이 메틸기이고, 다른 한쪽이 탄소수 3 내지 5의 직쇄상 또는 분지쇄상 알킬기인 화합물을 포함하는 것을 특징으로 한다.The solvent or solvent composition for pattern printing which concerns on this invention is a solvent or solvent composition used when forming the element which comprises a solar cell, an organic TFT, an electronic paper, or a plasma display by the printing method, and has two propylene glycol dialkyl ethers. It is characterized by including the compound whose one of a terminal alkyl group is a methyl group, and the other is a C3-C5 linear or branched alkyl group.
상기 인쇄법으로서는, 예를 들면 잉크젯법, 스크린 인쇄법, 철판 인쇄법, 오프셋 인쇄법, 그라비아 인쇄법, 마이크로컨택트 인쇄법, 나노임프린트법 등을 들 수 있다.As said printing method, the inkjet method, the screen printing method, the iron plate printing method, the offset printing method, the gravure printing method, the microcontact printing method, the nanoimprint method, etc. are mentioned, for example.
프로필렌글리콜디알킬에테르의 말단 알킬기에 있어서의 탄소수 3 내지 5의 직쇄상 또는 분지쇄상 알킬기로서는, 예를 들면 n-프로필, n-부틸, n-펜틸기 등의 직쇄상 알킬기; 이소프로필, 이소부틸, s-부틸, t-부틸, 이소펜틸, s-펜틸, t-펜틸기 등의 분지쇄상 알킬기를 들 수 있다. 본 발명에서는, 그 중에서도 탄소수 3 내지 5의 직쇄상 알킬기가 바람직하고, 특히 원료의 조달이 용이하다는 점에서, n-프로필, n-부틸, n-펜틸기가 바람직하다.As a C3-C5 linear or branched alkyl group in the terminal alkyl group of propylene glycol dialkyl ether, For example, linear alkyl groups, such as n-propyl, n-butyl, n-pentyl group; And branched alkyl groups such as isopropyl, isobutyl, s-butyl, t-butyl, isopentyl, s-pentyl and t-pentyl groups. In this invention, a C3-C5 linear alkyl group is especially preferable, and especially n-propyl, n-butyl, n-pentyl group is preferable at the point which procurement of a raw material is easy.
본 발명에서의 프로필렌글리콜디알킬에테르의 2개의 말단 알킬기 중 한쪽이 메틸기이고, 다른 한쪽이 탄소수 3 내지 5의 직쇄상 또는 분지쇄상 알킬기인 화합물로서는, 예를 들면 프로필렌글리콜메틸-n-프로필에테르, 프로필렌글리콜메틸-n-부틸에테르, 프로필렌글리콜메틸-n-펜틸에테르 등을 들 수 있다. 이들은 단독으로 사용할 수도 있고, 2종 이상을 혼합하여 사용할 수도 있다.As a compound whose one of the two terminal alkyl groups of the propylene glycol dialkyl ether in this invention is a methyl group, and the other is a C3-C5 linear or branched alkyl group, For example, propylene glycol methyl- n-propyl ether, Propylene glycol methyl-n-butyl ether, propylene glycol methyl-n-pentyl ether, and the like. These may be used independently, or may mix and use 2 or more types.
또한, 본 발명에 따른 패턴 인쇄용 용제 또는 용제 조성물은 친수성과 친유성의 균형이 잡힌 것임이 바람직하고, 예를 들면 함수율이 3% 이하(그 중에서도, 1.5% 이하)인 것이 바람직하다. 함수율이 상기 범위를 상회하면 본 발명에 따른 패턴 인쇄용 용제 또는 용제 조성물을 사용하여 형성한 소자가 열화하기 쉬워지는 경향이 있다.Moreover, it is preferable that the solvent or solvent composition for pattern printing which concerns on this invention balanced the hydrophilicity and lipophilic property, for example, it is preferable that moisture content is 3% or less (among these, 1.5% or less). When moisture content exceeds the said range, the element formed using the solvent for pattern printing or the solvent composition which concerns on this invention tends to become easy to deteriorate.
또한, 본 발명에 따른 패턴 인쇄용 용제 또는 용제 조성물은 에틸셀룰로오스 등의 수지 첨가물의 용해성이 우수한 것이 바람직하고, 예를 들면 에틸셀룰로오스를 5 중량% 이상 용해하는 것이 바람직하다. 에틸셀룰로오스 등의 수지 첨가물의 용해량이 상기 범위를 하회하면 점도가 낮아져서, 틱소트로피성 및 인쇄물의 형상 안정성이 부족한 경향이 있다.Moreover, it is preferable that the solvent or solvent composition for pattern printing which concerns on this invention is excellent in the solubility of resin additives, such as ethyl cellulose, and it is preferable to melt | dissolve ethyl cellulose 5weight% or more, for example. When the dissolved amount of resin additives, such as ethyl cellulose, is less than the said range, a viscosity will become low and there exists a tendency for thixotropy and the shape stability of a printed matter to run short.
본 발명의 패턴 인쇄용 용제 또는 용제 조성물은 상기 프로필렌글리콜디알킬에테르 이외에도, 친수성과 친유성의 균형을 손상시키지 않는 범위에서, 필요에 따라서 다른 용제를 혼합하여 이용할 수도 있다. 다른 용제의 배합 비율은 적절하게 조정할 수 있다.In addition to the propylene glycol dialkyl ether, other solvents may be used as the pattern printing solvent or the solvent composition of the present invention, if necessary, within the range of not impairing the balance between hydrophilicity and lipophilic. The compounding ratio of another solvent can be adjusted suitably.
다른 용제로서는 인쇄 용도에 일반적으로 사용되고 있는 용제를 사용할 수 있고, 예를 들면 카프로산, 카프릴산 등의 카르복실산류; 이소프로필알코올, 1-옥탄올, 1-노난올, 벤질알코올 등의 알코올류; 에틸렌글리콜모노메틸에테르, 에틸렌글리콜모노에틸에테르, 에틸렌글리콜모노프로필에테르, 에틸렌글리콜모노부틸에테르 등의 에틸렌글리콜모노알킬에테르류; 에틸렌글리콜모노메틸에테르아세테이트, 에틸렌글리콜모노에틸에테르아세테이트, 에틸렌글리콜모노프로필에테르아세테이트, 에틸렌글리콜모노부틸에테르아세테이트, 에틸렌글리콜모노페닐에테르아세테이트 등의 에틸렌글리콜모노알킬에테르아세테이트류; 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노에틸에테르, 디에틸렌글리콜모노프로필에테르, 디에틸렌글리콜모노부틸에테르 등의 디에틸렌글리콜모노알킬에테르류; 디에틸렌글리콜모노에틸에테르아세테이트, 디에틸렌글리콜모노부틸에테르아세테이트 등의 디에틸렌글리콜모노알킬에테르아세테이트류; 디에틸렌글리콜디메틸에테르, 디에틸렌글리콜디에틸에테르 등의 디에틸렌글리콜디알킬에테르류; 벤질에틸에테르, 디헥실에테르, 테트라히드로푸란 등의 다른 에테르류; 프로필렌글리콜모노메틸에테르아세테이트, 프로필렌글리콜모노에틸에테르아세테이트, 프로필렌글리콜모노부틸에테르아세테이트 등의 프로필렌글리콜모노알킬에테르아세테이트류; 디프로필렌글리콜메틸에테르아세테이트 등의 디프로필렌글리콜모노알킬에테르아세테이트류; 프로필렌글리콜프로필에테르, 프로필렌글리콜부틸에테르 등의 프로필렌글리콜모노알킬에테르류; 디프로필렌글리콜메틸에테르, 디프로필렌글리콜프로필에테르, 디프로필렌글리콜부틸에테르 등의 디프로필렌글리콜모노알킬에테르류; 트리프로필렌글리콜메틸에테르, 트리프로필렌글리콜부틸에테르 등의 트리프로필렌글리콜모노알킬에테르류; 프로필렌글리콜디메틸에테르, 프로필렌글리콜디에틸에테르 등의 상기 이외의 프로필렌글리콜디알킬에테르; 디프로필렌글리콜메틸프로필에테르, 디프로필렌글리콜메틸부틸에테르, 디프로필렌글리콜메틸펜틸에테르, 디프로필렌글리콜디메틸에테르 등의 디프로필렌글리콜디알킬에테르류; 트리프로필렌글리콜디메틸에테르 등의 트리프로필렌글리콜디알킬에테르류; 프로필렌글리콜디아세테이트, 1,3-부틸렌글리콜디아세테이트, 1,6-헥산디올디아세테이트, 1,4-부탄디올디아세테이트 등의 디아세테이트류; 시클로헥산올아세테이트, 3-메톡시부틸아세테이트, 락트산에틸아세테이트, 트리아세틴, 디히드로테르피닐아세테이트 등의 그 밖의 아세테이트류; 아세톤, 메틸에틸케톤, 메틸이소부틸케톤, 아세토닐아세톤, 시클로헥사논, 이소포론, 2-헵타논, 3-헵타논 등의 케톤류; 2-히드록시프로피온산메틸, 2-히드록시프로피온산에틸, 아세트산벤질, 에틸아세틸락테이트, 벤조산에틸, 옥살산디에틸, 말레산디에틸, γ-부티로락톤, 탄산에틸렌, 탄산프로필렌, 2-히드록시-2-메틸프로피온산에틸, 3-메톡시프로피온산메틸, 3-메톡시프로피온산에틸, 3-에톡시프로피온산메틸, 3-에톡시프로피온산에틸, 에톡시아세트산에틸, 히드록시아세트산에틸, 2-히드록시-3-메틸부탄산메틸, 3-메틸-3-메톡시부틸아세테이트, 4-메톡시부틸아세테이트, 3-메틸-3-메톡시부틸프로피오네이트, 아세트산에틸, 아세트산프로필, 아세트산부틸, 포름산아밀, 아세트산아밀, 프로피온산부틸, 부티르산에틸, 부티르산프로필, 부티르산부틸, 피루브산메틸, 피루브산에틸, 피루브산프로필, 아세토아세트산메틸, 아세토아세트산에틸, 2-옥소부탄산에틸 등의 에스테르류; 톨루엔, 크실렌 등의 방향족 탄화수소류; N-메틸피롤리돈, N,N-디메틸포름아미드, N,N-디메틸아세트아미드 등의 아미드류; 테르피네올, 디히드로테르피네올, 디히드로테르피닐프로피오네이트, 리모넨, 멘탄, 멘톨 등의 테르펜류; 미네랄스피리트, 석유나프타 S-100, 석유나프타 S-150, 테트랄린, 테레빈유 등의 고비점 용제 등을 들 수 있다.As another solvent, the solvent generally used for a printing use can be used, For example, Carboxylic acids, such as caproic acid and caprylic acid; Alcohols such as isopropyl alcohol, 1-octanol, 1-nonanol and benzyl alcohol; Ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, and ethylene glycol monobutyl ether; Ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl ether acetate, ethylene glycol monobutyl ether acetate, and ethylene glycol monophenyl ether acetate; Diethylene glycol monoalkyl ethers such as diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether and diethylene glycol monobutyl ether; Diethylene glycol monoalkyl ether acetates such as diethylene glycol monoethyl ether acetate and diethylene glycol monobutyl ether acetate; Diethylene glycol dialkyl ethers such as diethylene glycol dimethyl ether and diethylene glycol diethyl ether; Other ethers such as benzyl ethyl ether, dihexyl ether and tetrahydrofuran; Propylene glycol monoalkyl ether acetates such as propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, and propylene glycol monobutyl ether acetate; Dipropylene glycol monoalkyl ether acetates such as dipropylene glycol methyl ether acetate; Propylene glycol monoalkyl ethers such as propylene glycol propyl ether and propylene glycol butyl ether; Dipropylene glycol monoalkyl ethers such as dipropylene glycol methyl ether, dipropylene glycol propyl ether and dipropylene glycol butyl ether; Tripropylene glycol monoalkyl ethers such as tripropylene glycol methyl ether and tripropylene glycol butyl ether; Propylene glycol dialkyl ethers other than the above, such as propylene glycol dimethyl ether and propylene glycol diethyl ether; Dipropylene glycol dialkyl ethers such as dipropylene glycol methyl propyl ether, dipropylene glycol methyl butyl ether, dipropylene glycol methyl pentyl ether, and dipropylene glycol dimethyl ether; Tripropylene glycol dialkyl ethers such as tripropylene glycol dimethyl ether; Diacetates such as propylene glycol diacetate, 1,3-butylene glycol diacetate, 1,6-hexanediol diacetate, and 1,4-butanediol diacetate; Other acetates such as cyclohexanol acetate, 3-methoxybutyl acetate, ethyl lactate, triacetin, dihydroterpinyl acetate; Ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, acetonyl acetone, cyclohexanone, isophorone, 2-heptanone and 3-heptanone; Methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate, benzyl acetate, ethylacetyl lactate, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyrolactone, ethylene carbonate, propylene carbonate, 2-hydroxy- Ethyl 2-methylpropionate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl ethoxyacetate, ethyl hydroxyacetate, 2-hydroxy-3 Methyl methyl butyrate, 3-methyl-3-methoxybutyl acetate, 4-methoxybutyl acetate, 3-methyl-3-methoxybutylpropionate, ethyl acetate, propyl acetate, butyl acetate, amyl formate, acetic acid Esters such as amyl, butyl propionate, ethyl butyrate, propyl butyrate, butyl butyrate, methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetoacetate, ethyl acetoacetate and ethyl 2-oxobutanoate; Aromatic hydrocarbons such as toluene and xylene; Amides such as N-methylpyrrolidone, N, N-dimethylformamide and N, N-dimethylacetamide; Terpenes such as terpineol, dihydroterpineol, dihydroterpinylpropionate, limonene, mentan and menthol; High boiling point solvents, such as mineral spirit, petroleum naphtha S-100, petroleum naphtha S-150, tetralin, and turpentine oil, etc. are mentioned.
[패턴 형성용 페이스트 조성물][Paste Composition for Pattern Formation]
본 발명에 따른 패턴 형성용 페이스트 조성물은, 적어도 상기 패턴 인쇄용 용제 또는 용제 조성물과 결합제 수지를 함유하는 것을 특징으로 한다.The paste composition for pattern formation which concerns on this invention contains at least the said solvent for pattern printing or a solvent composition, and binder resin, It is characterized by the above-mentioned.
결합제 수지로서는 특별히 한정되지 않고, 태양 전지, 유기 TFT, 전자 페이퍼 또는 플라즈마 디스플레이에 있어서의 소자의 형성에 사용되는 주지관용의 수지를 사용할 수 있고, 예를 들면 메틸셀룰로오스, 에틸셀룰로오스, 히드록시셀룰로오스, 메틸히드록시셀룰로오스 등의 셀룰로오스계 수지, 아크릴계 수지, 폴리비닐아세테이트, 폴리비닐알코올 등의 비닐 수지 등을 들 수 있다. 이들은 단독으로 또는 2종 이상을 혼합하여 사용할 수 있다. 본 발명에서는, 그 중에서도 도포 시의 판 분리가 좋고, 틱소트로피성 및 인쇄물의 형상 안정성이 우수하다는 점에서, 셀룰로오스계 수지를 사용하는 것이 바람직하다.It does not specifically limit as binder resin, Resin for the main pipe used for formation of the element in a solar cell, an organic TFT, an electronic paper, or a plasma display can be used, For example, methyl cellulose, ethyl cellulose, hydroxy cellulose, And vinyl resins such as cellulose resins such as methyl hydroxy cellulose, acrylic resins, polyvinylacetate, and polyvinyl alcohol. These can be used individually or in mixture of 2 or more types. In this invention, it is preferable to use a cellulose resin from the point which is excellent in the plate | board separation at the time of application | coating, and excellent in thixotropy property and the shape stability of printed matter.
패턴 형성용 페이스트 조성물에 있어서의 상기 패턴 인쇄용 용제 또는 용제 조성물의 함유량으로서는, 예를 들면 1 내지 99 중량% 정도, 바람직하게는 3 내지 75 중량% 정도이다. 패턴 인쇄용 용제 또는 용제 조성물의 함유량이 상기 범위를 하회하면 패턴 형성용 페이스트 조성물의 점도가 너무 높아져, 인쇄 용도에 사용하는 것이 곤란해지는 경향이 있다. 한편, 패턴 인쇄용 용제 또는 용제 조성물의 함유량이 상기 범위를 상회하면 건조에 시간이 걸려 작업 효율이 저하되는 경향이 있다.As content of the said pattern printing solvent or solvent composition in the paste composition for pattern formation, it is about 1-99 weight%, for example, Preferably it is about 3-75 weight%. When content of the solvent for pattern printing or a solvent composition is less than the said range, the viscosity of the paste composition for pattern formation becomes high too much, and it exists in the tendency to use for a printing use. On the other hand, when content of the solvent for pattern printing or a solvent composition exceeds the said range, drying takes time and it exists in the tendency for a work efficiency to fall.
패턴 형성용 페이스트 조성물에 있어서의 결합제 수지의 함유량으로서는, 예를 들면 0.1 내지 15 중량% 정도, 바람직하게는 1 내지 10 중량% 정도이다. 결합제 수지의 함유량이 상기 범위를 하회하면 틱소트로피성 및 인쇄물의 형상 안정성이 부족한 경향이 있고, 한편 결합제 수지의 함유량이 상기 범위를 상회하면 점도가 너무 높아져, 인쇄용으로서 사용하는 것이 곤란해지는 경향이 있다.As content of binder resin in the paste composition for pattern formation, it is about 0.1-15 weight%, for example, Preferably it is about 1-10 weight%. If the content of the binder resin is less than the above range, thixotropy and the shape stability of the printed matter tend to be insufficient, while if the content of the binder resin exceeds the above range, the viscosity becomes too high and it is difficult to use for printing. .
본 발명에 따른 패턴 형성용 페이스트 조성물은 도체 기능, 절연 기능, 반도체 기능 중 어느 하나를 발현하는 것일 수도 있고, 상기 이외에 다른 첨가물을 배합할 수도 있다. 다른 첨가물로서는, 예를 들면 금속 산화물, 유전체 재료 등의 금속 재료, 유기 TFT 재료, 도전성 고분자 재료, 이온 전도체 재료, 유기-무기 혼성 이온 전도 재료, 유기 또는 무기 안료, 분산제, 소포제, 안정제, 산화 방지제, 경화 촉진제, 증감제, 충전제, 자외선 흡수제, 응집 방지제 등을 들 수 있다. 다른 첨가물의 배합량으로서는, 본 발명의 효과를 손상시키지 않는 범위 내이면 되고, 예를 들면 패턴 형성용 페이스트 조성물 전체의 0.1 내지 99 중량% 정도이다.The paste composition for pattern formation which concerns on this invention may express any of a conductor function, an insulation function, and a semiconductor function, and may mix | blend other additives other than the above. As other additives, for example, metal materials such as metal oxides and dielectric materials, organic TFT materials, conductive polymer materials, ion conductor materials, organic-inorganic hybrid ion conductive materials, organic or inorganic pigments, dispersants, antifoaming agents, stabilizers, antioxidants , A curing accelerator, a sensitizer, a filler, an ultraviolet absorber, an aggregation inhibitor, and the like. As a compounding quantity of another additive, what is necessary is just in the range which does not impair the effect of this invention, and is about 0.1 to 99 weight% of the whole pattern composition paste composition, for example.
본 발명에 따른 패턴 형성용 페이스트 조성물은, 예를 들면 상기 패턴 인쇄용 용제 또는 용제 조성물, 결합제 수지, 및 필요에 따라서 다른 첨가물을 배합하고, 혼합 믹서 등의 교반 장치를 이용하여 충분히 혼련하여, 균일하게 분산함으로써 제조할 수 있다.The paste composition for pattern formation which concerns on this invention mix | blends the said pattern printing solvent or solvent composition, binder resin, and another additive as needed, for example, and knead | mixes enough using a stirring apparatus, such as a mixing mixer, and it is uniform. It can manufacture by dispersing.
본 발명에 따른 패턴 형성용 페이스트 조성물은 인쇄법에 의해 기재 등에 도포함으로써 패턴 형성이 가능하기 때문에, 대면적이며 플렉시블한 기판 표면에도 용이하게 효율적으로, 또한 염가로 소자를 형성할 수 있다.Since the pattern formation paste composition which concerns on this invention can be pattern-formed by apply | coating to a base material etc. by the printing method, an element can be formed easily and efficiently also on a large area and a flexible substrate surface easily.
[패턴 형성 방법][Pattern Forming Method]
본 발명에 따른 패턴 형성 방법은, 태양 전지, 유기 TFT, 전자 페이퍼 또는 플라즈마 디스플레이를 구성하는 소자의 패턴 형성 방법으로서, 기판 상에 상기 패턴 형성용 페이스트 조성물을 인쇄법을 이용하여 도포함으로써 패턴층을 형성하는 공정(패턴 인쇄 공정)과, 상기 패턴층을 경화 또는 소성하는 공정(패턴 경화 또는 소성 공정)을 갖는 것을 특징으로 한다.The pattern formation method which concerns on this invention is a pattern formation method of the element which comprises a solar cell, an organic TFT, an electronic paper, or a plasma display, The pattern layer is apply | coated by apply | coating the said pattern formation paste composition on a board | substrate using the printing method. It has a process (pattern printing process) to form, and the process (pattern hardening or baking process) of hardening or baking the said pattern layer, It is characterized by the above-mentioned.
패턴 인쇄 공정에 있어서의 인쇄법으로서는, 잉크젯법, 스크린 인쇄법, 철판 인쇄법, 오프셋 인쇄법, 그라비아 인쇄법, 마이크로컨택트 인쇄법, 나노임프린트법으로 이루어지는 군으로부터 선택되는 적어도 1종의 방법을 들 수 있다.As a printing method in a pattern printing process, at least 1 sort (s) of method chosen from the group which consists of an inkjet method, the screen printing method, the iron plate printing method, the offset printing method, the gravure printing method, the microcontact printing method, and the nanoimprinting method is mentioned. Can be.
상기 인쇄법에 의해 형성된 패턴층은 건조시키고, 그 후 가열 처리 및/또는 광 조사함으로써 경화시킬 수 있다. 또한, 건조 후, 경화시키지 않고 소성할 수도 있다. 건조 방법으로서는, 예를 들면 80 내지 200℃ 정도의 온도에서, 예를 들면 0.1 내지 3시간 정도 가열하는 방법 등을 들 수 있다. 가열 처리를 행하는 경우, 그 온도로서는, 반응에 제공하는 성분이나 촉매의 종류 등에 따라서 적절하게 조정할 수 있고, 예를 들면 50 내지 200℃ 정도이다. 또한, 가열 시간으로서는, 예를 들면 0.5 내지 3시간 정도이다. 광 조사를 행하는 경우, 그의 광원으로서는, 예를 들면 수은 램프, 크세논 램프, 카본아크 램프, 메탈할라이드 램프, 태양광, 전자선, 레이저광 등을 사용할 수 있다. 광 조사 시간으로서는, 예를 들면 0.5 내지 30분 정도이다. 소성을 행하는 경우, 소성 온도로서는, 예를 들면 200 내지 1500℃ 정도이다. 또한, 소성 시간으로서는, 예를 들면 0.1 내지 5시간 정도이다.The pattern layer formed by the said printing method can be hardened | cured by drying and heat-processing and / or light irradiation after that. Moreover, you may bake without drying, after hardening. As a drying method, the method of heating about 0.1 to 3 hours, etc. are mentioned, for example at the temperature of about 80-200 degreeC. When heat-processing, as the temperature, it can adjust suitably according to the component, catalyst type, etc. which are used for reaction, and it is about 50-200 degreeC, for example. Moreover, as heating time, it is about 0.5 to 3 hours, for example. When irradiating light, as a light source, a mercury lamp, a xenon lamp, a carbon arc lamp, a metal halide lamp, sunlight, an electron beam, a laser beam, etc. can be used, for example. As light irradiation time, it is about 0.5 to 30 minutes, for example. When baking, as baking temperature, it is about 200-1500 degreeC, for example. Moreover, as baking time, it is about 0.1 to 5 hours, for example.
상기 방법에 의해 얻어지는 패턴층 두께는 용도에 따라서 적절하게 조정할 수 있고, 예를 들면 수 nm 내지 200 ㎛ 정도이다.The pattern layer thickness obtained by the said method can be adjusted suitably according to a use, and is about several nm-200 micrometers, for example.
패턴층을 형성하는 기판으로서는, 내열성 및 내용제성을 갖는 것이 바람직하고, 예를 들면 폴리에틸렌테레프탈레이트, 폴리에틸렌나프탈레이트, 폴리에스테르, 폴리에틸렌, 폴리프로필렌, 폴리스티렌, 폴리아미드, 폴리이미드, 폴리비닐알코올, 폴리비닐부티랄, 폴리염화비닐, 폴리염화비닐리덴, 폴리플루오로에틸렌 등의 불소 함유 수지, 폴리카보네이트, 아크릴 수지, 메타크릴 수지, 시클로올레핀 공중합체, 도전성 중합체, 나일론, 셀룰로오스, 유리, ITO 등을 들 수 있다. 기판 두께로서는, 예를 들면 0.1 내지 50 mm 정도이다.As a board | substrate which forms a pattern layer, what has heat resistance and solvent resistance is preferable, For example, polyethylene terephthalate, polyethylene naphthalate, polyester, polyethylene, polypropylene, polystyrene, polyamide, polyimide, polyvinyl alcohol, poly Fluorine-containing resins such as vinyl butyral, polyvinyl chloride, polyvinylidene chloride, polyfluoroethylene, polycarbonate, acrylic resin, methacryl resin, cycloolefin copolymer, conductive polymer, nylon, cellulose, glass, ITO and the like Can be mentioned. As a board | substrate thickness, it is about 0.1-50 mm, for example.
일반적으로, 태양 전지(특히, 유기 태양 전지)는 n형 반도체층과 p형 반도체층을 포함하는 광전 변환층이 광 입사측 전극(버스 전극 및 핑거 전극을 포함함)과 이면측 전극 사이에 끼워진 구조를 갖는다.In general, a solar cell (especially an organic solar cell) has a photoelectric conversion layer comprising an n-type semiconductor layer and a p-type semiconductor layer sandwiched between a light incident side electrode (including a bus electrode and a finger electrode) and a backside electrode. Has a structure.
태양 전지는, 예를 들면 하기 방법에 의해 제조할 수 있다. 본 발명에 따른 패턴 형성 방법에 따르면, 태양 전지를 구성하는 소자를 정밀도 좋게 형성할 수 있다.A solar cell can be manufactured by the following method, for example. According to the pattern formation method which concerns on this invention, the element which comprises a solar cell can be formed with high precision.
1: B(보론 원자) 등을 불순물로서 첨가한 p형 반도체를 인쇄법에 의해 형성한다.1: The p-type semiconductor which added B (boron atom) etc. as an impurity is formed by the printing method.
2: 얻어진 p형 반도체 표면에 텍스쳐(요철) 가공을 실시하고 나서, P(인 원자) 등을 불순물로서 첨가한 n형 반도체를 인쇄법에 의해 적층한다.2: The surface of the obtained p-type semiconductor is subjected to texture (concave-convex) processing, and then the n-type semiconductor including P (phosphorus atom) or the like as an impurity is laminated by a printing method.
3: p형 반도체 표면에 질화규소, 산화티탄 등의 반사 방지막을 형성한다.3: An antireflection film of silicon nitride, titanium oxide or the like is formed on the p-type semiconductor surface.
4: n형 반도체 표면에 버스 전극과 핑거 전극(광 입사측 전극)을 인쇄법에 의해 형성한다.4: A bus electrode and a finger electrode (light incidence side electrode) are formed on the n-type semiconductor surface by the printing method.
일반적으로, 유기 TFT는 전극층(게이트 전극층, 소스 전극층, 드레인 전극층) 및 유기 반도체층으로 구성된다. 본 발명에 따른 패턴 형성 방법에 따르면, 유기 TFT를 구성하는 소자를 정밀도 좋게 형성할 수 있다.In general, the organic TFT is composed of an electrode layer (gate electrode layer, source electrode layer, drain electrode layer) and an organic semiconductor layer. According to the pattern formation method which concerns on this invention, the element which comprises an organic TFT can be formed with precision.
일반적으로, 전자 페이퍼는 표시층과 그것을 제어하는 드라이버층이 기판 사이에 끼워진 구조를 갖는다. 그리고, 드라이버층으로서 상기 유기 TFT를 채용함으로써 플렉시블한 디스플레이를 실현할 수 있다.In general, electronic paper has a structure in which a display layer and a driver layer for controlling it are sandwiched between substrates. By employing the organic TFT as a driver layer, a flexible display can be realized.
일반적으로, 플라즈마 디스플레이는, 전극을 표면에 형성한 전방면 유리 기판과, 전극 및 형광체층을 형성한 배면 유리 기판을 좁은 간격으로 대향시켜 희가스를 봉입한 구조를 갖는다.In general, a plasma display has a structure in which a rare gas is enclosed by opposing a front glass substrate on which an electrode is formed on a surface and a back glass substrate on which an electrode and a phosphor layer are formed at narrow intervals.
플라즈마 디스플레이는, 예를 들면 하기 방법에 의해 제조할 수 있다. 본 발명에 따른 패턴 형성 방법에 따르면, 플라즈마 디스플레이를 구성하는 소자를 정밀도 좋게 형성할 수 있다.A plasma display can be manufactured by the following method, for example. According to the pattern formation method according to the present invention, the elements constituting the plasma display can be formed with high precision.
1: 전방면 유리 기판 상에 표시 전극, 버스 전극을 형성한다.1: A display electrode and a bus electrode are formed on a front glass substrate.
2: 추가로 유전체층, MgO 층을 형성한다.2: Further, a dielectric layer and an MgO layer are formed.
3: 배면 유리 기판 상에 데이터 전극을 형성하고, 유전체층을 형성하고, 추가로 배리어리브, 형광체층을 형성한다.3: A data electrode is formed on a back glass substrate, a dielectric layer is formed, and a barrier rib and a phosphor layer are further formed.
4: 전방면 유리 기판과 배면 유리 기판을 접합시키고, 배기하고, 방전 가스를 봉입한 후, 인쇄 기판을 실장한다.4: After attaching a front glass substrate and a back glass substrate, exhausting and sealing a discharge gas, a printed circuit board is mounted.
본 발명에 따른 패턴 형성 방법은 인쇄법을 이용하기 때문에, 기판에 대하여 비접촉의 상태에서 패턴을 형성할 수 있고, 대면적 및/또는 플렉시블한 기판에도 용이하게 패턴 형성을 행할 수 있다. 그 때문에, 특히 태양 전지, 유기 TFT, 전자 페이퍼 또는 플라즈마 디스플레이 등을 구성하는 소자의 제조에 있어서, 미세한 소자 패턴을 고정밀도로 형성할 수 있다. 또한, 마스크의 제조 등의 복잡한 공정을 거치지 않고 직접 묘사하는 것이 가능하여, 미세가공 기술을 이용할 필요가 없다. 또한, 상온상압 환경 하에서 제조할 수 있다. 그 때문에, 제조 공정의 대폭적인 간소화, 설비의 간소화, 제조 비용의 삭감이 가능하다.Since the pattern forming method according to the present invention uses the printing method, the pattern can be formed in a non-contact state with respect to the substrate, and the pattern can be easily formed on a large area and / or a flexible substrate. Therefore, especially in manufacture of the element which comprises a solar cell, an organic TFT, an electronic paper, a plasma display, etc., a fine element pattern can be formed with high precision. In addition, it is possible to directly describe without going through a complicated process such as the manufacture of a mask, there is no need to use a microfabrication technology. In addition, it can be manufactured under an ambient temperature and normal pressure environment. Therefore, the manufacturing process can be greatly simplified, the equipment can be simplified, and the manufacturing cost can be reduced.
[실시예][Example]
이하, 실시예에 의해 본 발명을 보다 구체적으로 설명하는데, 본 발명은 이들 실시예에 의해 한정되는 것은 아니다.EXAMPLES Hereinafter, although an Example demonstrates this invention more concretely, this invention is not limited by these Examples.
실시예 1Example 1
프로필렌글리콜메틸-n-부틸에테르(상품명 「PMNB」, 다이셀 가가꾸 고교(주) 제조, 이후 「PMNB」라고 칭하는 경우가 있음) 20 g, 증류수 20 g을 50 ml 플라스크에 넣고, 약 10분간 교반한 후, 10분간 정치하고, 유기상의 수분 측정을 행한 바, 25℃ 환경 하에서의 수분 농도는 0.7%였다.20 g of propylene glycol methyl-n-butyl ether (trade name "PMNB", manufactured by Daicel Chemical Industries, Ltd., may be hereinafter referred to as "PMNB") and 20 g of distilled water in a 50 ml flask, and approximately 10 minutes After stirring, the mixture was allowed to stand for 10 minutes and the water content of the organic phase was measured. As a result, the water concentration in a 25 ° C environment was 0.7%.
상기 PMNB를 4개의 50 ml 플라스크에 각각 20.00 g씩 넣고, 상품명 「에토셀」(등록상표)(에틸셀룰로오스, DOW(주) 제조)를 각각 1.05 g(5% 용액), 1.28 g(6% 용액), 1.51 g(7% 용액), 1.74 g(8% 용액) 추가하였다. 그 후, 65℃에서 교반하여 정치하고, 25℃까지 자연 냉각한 후, 에틸셀룰로오스의 용해성을 육안으로 확인하고, 하기 기준으로 평가하였다.20.00 g of each of the above-described PMNBs were put into four 50 ml flasks, and 1.05 g (5% solution) and 1.28 g (6% solution) of the brand name "Ethocell" (registered trademark) (ethyl cellulose, manufactured by DOW Corporation) respectively. ), 1.51 g (7% solution) and 1.74 g (8% solution) were added. Thereafter, the mixture was stirred at 65 ° C, left to stand, and naturally cooled to 25 ° C. The solubility of ethyl cellulose was visually confirmed and evaluated based on the following criteria.
평가 기준Evaluation standard
에틸셀룰로오스가 완전히 용해하였다: ○Ethyl cellulose completely dissolved: ○
에틸셀룰로오스가 일부 불용 또는 완전히 불용이었다: ×Ethylcellulose was partially or completely insoluble: ×
실시예 2Example 2
프로필렌글리콜메틸-n-프로필에테르(상품명 「PMNP」, 다이셀 가가꾸 고교(주) 제조, 이후 「PMNP」라고 칭하는 경우가 있음) 20 g, 증류수 20 g을 50 ml 플라스크에 넣고, 약 10분간 교반한 후, 10분간 정치하고, 유기상의 수분 측정을 행한 바, 25℃ 환경 하에서의 수분 농도는 1.0%였다.20 g of propylene glycol methyl-n-propyl ether (trade name "PMNP", manufactured by Daicel Chemical Industries, Ltd., may be hereinafter referred to as "PMNP") and 20 g of distilled water in a 50 ml flask. After stirring, the mixture was allowed to stand for 10 minutes and the water content of the organic phase was measured. As a result, the water concentration in a 25 ° C environment was 1.0%.
PMNB 대신에 상기 PMNP를 사용한 것 이외에는 실시예 1과 동일하게 하여 에틸셀룰로오스의 용해성을 평가하였다.The solubility of ethyl cellulose was evaluated in the same manner as in Example 1 except that PMNP was used instead of PMNB.
비교예 1Comparative Example 1
프로필렌글리콜디메틸에테르(상품명 「하이솔브 MMPOM」, 도호가가꾸고교(주) 제조, 이후 「MMPOM」이라고 칭하는 경우가 있음) 20 g, 증류수 20 g을 50 ml 플라스크에 넣고, 약 10분간 교반한 후, 10분간 정치하고, 유기상의 수분 측정을 행한 바, 25℃ 환경 하에서의 수분 농도는 7.3%였다.20 g of propylene glycol dimethyl ether (trade name "High Solve MMPOM", manufactured by Toho Chemical Co., Ltd., may be referred to as "MMPOM" thereafter) and 20 g of distilled water in a 50 ml flask, followed by stirring for about 10 minutes. After standing for 10 minutes and measuring the moisture of the organic phase, the moisture concentration in 25 degreeC environment was 7.3%.
PMNB 대신에 상기 MMPOM을 사용한 것 이외에는 실시예 1과 동일하게 하여 에틸셀룰로오스의 용해성을 평가하였다.The solubility of ethyl cellulose was evaluated in the same manner as in Example 1 except that MMPOM was used instead of PMNB.
비교예 2Comparative Example 2
「제5판 실험 과학 강좌 14」(마루젠 가부시끼가이샤 슛빤, p239-241)에 기재된 방법에 의해 합성한 프로필렌글리콜디부틸에테르(이후, 「PDB」라고 칭하는 경우가 있음) 20 g, 증류수 20 g을 50 ml 플라스크에 넣고, 약 10분간 교반한 후, 10분간 정치하고, 유기상의 수분 측정을 행한 바, 25℃ 환경 하에서의 수분 농도는 0.1%였다.20 g of propylene glycol dibutyl ether (hereinafter may be referred to as "PDB") synthesized by the method described in `` Fifth Edition Experiment Science Lecture 14 '' (Maruzen Kabushiki Kasho, P239-241), distilled water 20 g was placed in a 50 ml flask, the mixture was stirred for about 10 minutes, and then left standing for 10 minutes, and the moisture content of the organic phase was measured. The water concentration in a 25 ° C environment was 0.1%.
PMNB 대신에 상기 PDB를 사용한 것 이외에는 실시예 1과 동일하게 하여 에틸셀룰로오스의 용해성을 평가하였다.The solubility of ethyl cellulose was evaluated in the same manner as in Example 1 except that PDB was used instead of PMNB.
상기 결과를 하기 표에 통합하여 나타낸다.The results are shown in the following table.
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