KR20120028545A - Thin film type solar cell and method for manufacturing the same - Google Patents

Abstract

PURPOSE: A thin film solar cell and a manufacturing method thereof are provided to improve the conductivity of a front electrode layer by forming a front electrode layer by depositing a conductive oxide on a metal material. CONSTITUTION: A front electrode layer(200) is formed on a substrate(100). The front electrode layer includes a metal material(210) and a conductive oxide(230). A semiconductor layer(300) is formed on the front electrode layer. A back reflection layer(400) is formed on the semiconductor layer. The back electrode layer(500) is formed on the semiconductor layer.

Description

Thin film type solar cell and method for manufacturing same

The present invention relates to a solar cell, and more particularly to a thin film solar cell.

Solar cells are devices that convert light energy into electrical energy using the properties of semiconductors.

The solar cell is composed of a PN junction structure in which a P (positive) type semiconductor and an N (negative) type semiconductor are bonded together. holes and electrons are generated, and the holes (+) move toward the P-type semiconductor and the electrons (-) move toward the N-type semiconductor due to the electric field generated from the PN junction. This makes it possible to produce power.

Such a solar cell can be classified into a substrate type solar cell and a thin film solar cell.

The substrate type solar cell is a solar cell manufactured by using a semiconductor material such as silicon as a substrate, and the thin film type solar cell is a solar cell manufactured by forming a semiconductor in the form of a thin film on a substrate such as glass.

Substrate-type solar cells, although somewhat superior in efficiency compared to thin-film solar cells, there is a limitation in minimizing the thickness in the process and there is a disadvantage that the manufacturing cost is increased because of the use of expensive semiconductor substrates.

Although thin-film solar cells are somewhat less efficient than substrate-type solar cells, they can be manufactured in a thin thickness and inexpensive materials can be used to reduce manufacturing costs, making them suitable for mass production.

Hereinafter, a thin film solar cell according to the related art will be described with reference to the accompanying drawings.

1 is a schematic cross-sectional view of a conventional thin film solar cell.

As can be seen in FIG. 1, a conventional thin film solar cell includes a substrate 10, a front electrode layer 20 formed on the substrate 10, a semiconductor layer 30 formed on the front electrode layer 20, and the semiconductor layer. And a rear electrode layer 50 formed on the rear reflective layer 40.

In this case, the front electrode layer 20 has a concave-convex structure on the surface thereof, so that the solar light is refracted or scattered in various paths, thereby increasing the light collection rate, thereby improving the efficiency of the solar cell. . In addition, the rear reflective layer 40 also has a concave-convex structure on its surface.

As described above, in order to form the front electrode layer 20 or the back reflection layer 40 in an uneven structure, a conventional chemical vapor deposition (CVD) method or a sputtering method is used.

The CVD method has the advantage that a separate etching process is not required to form the uneven structure since the uneven structure can be obtained at the same time as the deposition, but it is very difficult to control the process conditions for forming the desired uneven structure and the process cost is increased. There are disadvantages.

Although the sputtering method forms an uneven structure through a separate etching process after deposition, it is easier to form the uneven structure than the CVD method. However, when the etching solution such as acid is used, the formation and size of the uneven structure are still controlled. This is not easy, and in addition, environmental problems due to etching liquids such as acids may be caused, and treatment costs are increased, such as an additional process for cleaning the acid.

The present invention has been devised to solve the conventional problems as described above, the present invention provides a thin film type solar cell and a method of manufacturing the same, which is easy to form uneven structure, does not cause environmental problems and does not require additional processes such as cleaning process. For the purpose of

In order to achieve the above object, the present invention, a substrate; A front electrode layer formed on the substrate; A semiconductor layer formed on the front electrode layer; And a rear electrode layer formed on the semiconductor layer, wherein the front electrode layer is formed of a plurality of metal materials spaced apart at predetermined intervals from the substrate and a conductive oxide formed on the metal material, and formed on the metal material. Oxide provides a thin-film solar cell, characterized in that the surface of the concave-convex structure.

The invention also provides a substrate; A rear electrode layer formed on the substrate; A rear reflective layer formed on the rear electrode layer; A semiconductor layer formed on the back reflective layer; And a front electrode layer formed on the semiconductor layer, wherein the back reflection layer is formed of a plurality of metal materials and conductive oxides formed on the metal material spaced at predetermined intervals on the back electrode layer, and formed on the metal material. The formed conductive oxide provides a thin film solar cell, the surface of which is formed of an uneven structure.

The present invention also provides a process for forming a plurality of metal materials spaced at predetermined intervals on a substrate; Forming a conductive oxide on the substrate on which the metallic material is formed by using a sputtering method to form a front electrode layer made of the metallic material and the conductive oxide; Forming a semiconductor layer on the front electrode layer; And it provides a method for manufacturing a thin film solar cell comprising a step of forming a back electrode layer on the semiconductor layer.

The present invention also provides a process for forming a back electrode layer on a substrate; Forming a plurality of metal materials spaced at predetermined intervals on the back electrode layer; Forming a conductive oxide on the back electrode layer on which the metal material is formed by using a sputtering method to form a back reflection layer made of the metal material and the conductive oxide; Forming a semiconductor layer on the back reflective layer; And it provides a method for manufacturing a thin film solar cell comprising the step of forming a front electrode layer on the semiconductor layer.

According to the present invention by the above configuration has the following effects.

According to the present invention, a conductive oxide is deposited on a metal material to form a front electrode layer or a rear reflective layer by sputtering, so that the conductive oxide causes self-texturing without a separate etching process after the sputtering process. Since the surface is formed of the uneven structure, the etching process for obtaining the uneven structure is not required as in the prior art, and thus there is an effect that the cleaning process for removing the etchant and the environmental problems caused by the etchant is not added.

In addition, since the present invention forms a front electrode layer by depositing a conductive oxide on a metal material, the electrical conductivity of the front electrode layer is improved, thereby improving the efficiency of the solar cell.

1 is a schematic cross-sectional view of a conventional thin film solar cell.
2 is a schematic cross-sectional view of a thin film solar cell according to an embodiment of the present invention.
3A and 3B are schematic plan views illustrating the formation of a metal material according to an embodiment of the present invention.
4A and 4B are schematic plan views illustrating the formation of a metal material according to another embodiment of the present invention.
5 is a schematic cross-sectional view of a thin film solar cell according to another embodiment of the present invention.
6A to 6E are schematic cross-sectional views illustrating a manufacturing process of a thin film solar cell according to an embodiment of the present invention.
7A to 7E are schematic cross-sectional views illustrating a manufacturing process of a thin film solar cell according to another embodiment of the present invention.
FIG. 8 is a SEM image of the deposition of only the conductive oxide GZO on the substrate by sputtering, and the SEM image of the formation of Ag nanowire, which is a metal material on the substrate, and the deposition of the conductive oxide, GZO, on the substrate. The picture is shown.
FIG. 9 illustrates an SEM image photographed by forming Ag nanowires on a substrate and depositing GZO thereon by sputtering, but changing the deposition thickness of the GZO.
FIG. 10 is a graph illustrating a light scattering degree change according to a deposition thickness change of the GZO in FIG. 9.
FIG. 11 is a graph showing light-scattering variation by wavelength band when only GZO is deposited on a substrate by sputtering, and when Ag nanowires are formed on a substrate and GZO is deposited on the substrate by sputtering.
FIG. 12 is a graph showing IV curves when only GZO is deposited on a substrate by sputtering, and when Ag nanowires are formed on a substrate and GZO is deposited on the substrate by sputtering.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a schematic cross-sectional view of a thin film solar cell according to an embodiment of the present invention.

As can be seen in Figure 2, the thin-film solar cell according to an embodiment of the present invention, the substrate 100, the front electrode layer 200, the semiconductor layer 300, the back reflective layer 400, and the back electrode layer 500 It is made to include.

The substrate 100 is formed on a surface where sunlight is incident, and thus, a transparent material such as glass or transparent plastic is used as the material of the substrate 100.

The front electrode layer 200 is formed on the substrate 100 to function as a first electrode of a thin film solar cell, and includes a metal material 210 and a conductive oxide 230.

The metal material 210 is formed in a structure in which a plurality of the metal materials 210 are spaced apart at predetermined intervals. A detailed configuration of the metal material 210 will be described in detail with reference to FIGS. 3 to 4. .

3A and 3B are schematic plan views illustrating the formation of the metal material 210 according to an embodiment of the present invention.

As shown in FIGS. 3A and 3B, the metal material 210 may be formed in a dot structure on the substrate 100. In particular, as shown in FIG. 3A, the metal material 210 may be formed in a regularly arranged dot structure. As shown in FIG. 3B, the metal material 210 may be formed in an irregularly arranged dot structure.

The dot structure may be formed by one metal material 210 powder, or may be formed by an aggregate of a plurality of metal material 210 powders.

In addition, each of the plurality of dot structures need not necessarily have the same shape as each other, but may have different sizes and different shapes.

4A and 4B are schematic plan views illustrating the formation of the metal material 210 according to another embodiment of the present invention.

As shown in FIGS. 4A and 4B, the metal material 210 may be formed in a wire structure on the substrate 100. In particular, as shown in FIG. 4A, the metal material 210 may be formed in a regularly arranged wire structure. As shown in FIG. 4B, the metal material 210 may be formed in an irregularly arranged wire structure.

The wire structure may be variously modified, such as a straight structure or a curved structure.

In addition, each of the plurality of wire structures does not necessarily need to have the same shape as each other, but may have different sizes and different shapes from each other.

The metal material 210 is preferably a nano size material, specifically, nano size Ag, Au, Pt, Al, etc. may be used, but is not limited thereto.

Referring again to FIG. 2, the conductive oxide 230 is formed on the entire surface of the substrate 100 including the metal material 210. That is, the conductive oxide 230 is formed on the plurality of metal materials 210 and is formed on the substrate 100 in a region between the plurality of metal materials 210.

The conductive oxide 230 is preferably a transparent conductive metal oxide, specifically, Ga, Al. In the group consisting of In or F may be used ZnO or SnOx doped with one or more materials selected, but is not necessarily limited thereto.

The conductive oxide 230 formed on the plurality of metal materials 210 has a concave-convex structure on its surface. Particularly, in the present invention, the surface of the conductive oxide 230 is formed in a concave-convex structure even after the conductive oxide 230 is deposited by sputtering without a separate etching process.

That is, the present invention does not directly deposit the conductive oxide 230 on the substrate 100 using the sputtering method, but rather forms a plurality of metal materials 210 on the substrate 100, and sputtering method thereon. By depositing the conductive oxide 230 using the conductive oxide 230, the conductive oxide 230 deposited on the metal material 210 causes self-texturing to form a concave-convex structure.

As such, the present invention does not require a separate etching process after the sputtering process in order to obtain the front electrode layer 200 having a concave-convex structure. There is an advantage that is not added.

In addition, in the present invention, since the conductive oxide 230 is deposited on the metal material 210 to form the front electrode layer 200, the electrical conductivity of the front electrode layer 200 may be improved, thereby improving efficiency of the solar cell.

The conductive oxide 230 is deposited not only on the metal material 210 but also on the substrate 100 in a region between the plurality of metal materials 210. In this case, the conductive oxide 230 deposited on the substrate 100 may be formed to have the same surface as the conductive oxide 230 deposited on the metal material 210.

The semiconductor layer 300 is formed on the front electrode layer 200, and may be formed using a silicon-based compound such as amorphous silicon.

The semiconductor layer 300 may be formed in a PIN structure in which a P (positive) type semiconductor layer, an I (Intrinsic) type semiconductor layer, and an N (Negative) type semiconductor layer are sequentially stacked. When the semiconductor layer 300 is formed in the PIN structure as described above, the I-type semiconductor layer is depleted by the P-type semiconductor layer and the N-type semiconductor layer to generate an electric field therein, and is generated by sunlight. The holes and electrons are drift by the electric field and are collected in the P-type semiconductor layer and the N-type semiconductor layer, respectively.

In the case where the semiconductor layer has a PIN structure, it is preferable to form a P-type semiconductor layer on the front electrode layer 200 and then to form an I-type semiconductor layer and an N-type semiconductor layer. Since the drift mobility is lower than the drift mobility of the electrons, the P-type semiconductor layer is formed to be close to the light receiving surface in order to maximize the collection efficiency by incident light.

The back reflective layer 400 is formed on the semiconductor layer 300, and uses a transparent conductive material such as ZnO, ZnO: B, ZnO: Al, SnO ₂ , SnO ₂ : F, or Indium Tin Oxide (ITO). Can be formed.

Although the rear reflective layer 400 may be omitted, it is preferable to form the rear reflective layer 400 to increase efficiency of the solar cell. That is, when the back reflection layer 400 is formed, sunlight passing through the semiconductor layer 300 passes through the back reflection layer 400 and proceeds at various angles through refraction and scattering, and thus, in the back electrode layer 500. This is because the ratio of light reflected and re-incident to the semiconductor layer 300 may be increased.

The back electrode layer 500 is formed on the back reflective layer 400 to function as a second electrode of the thin film solar cell. The back electrode layer 500 may be formed of a metal material such as Ag, Al, Mo, Ni, Cu, or the like.

5 is a schematic cross-sectional view of a thin film solar cell according to another embodiment of the present invention.

As can be seen in Figure 5, the thin-film solar cell according to another embodiment of the present invention, the substrate 100, the back electrode layer 500, the back reflection layer 400, the semiconductor layer 300, the front electrode layer 200 It is done by

The substrate 100 is formed on a surface opposite to the surface on which the sunlight is incident, and thus, an opaque material may be used as the material of the substrate 100.

The back electrode layer 500 is formed on the substrate 100. The back electrode layer 500 may be formed of a metal material such as Ag, Al, Mo, Ni, Cu, or the like.

The rear reflective layer 400 is formed on the rear electrode layer 500. The back reflective layer 400 includes a metal material 410 and a conductive oxide 430. The metal material 410 and the conductive oxide 430 constituting the rear reflective layer 400 have changed positions, but the metal material 210 and the conductive oxide constituting the front electrode layer 200 may be changed in the above-described embodiment. 230 and the specific configuration are the same.

That is, the metal material 410 is formed in a structure in which a plurality of the spaced apart on the rear electrode layer 500 at predetermined intervals, may be formed in a dot structure as shown in Figs. 3a and 3b, 4a and It may be formed as a wire (wire) structure as shown in Figure 4b. In addition, the metal material 410 may use nano-sized Ag, Au, Pt, Al, and the like.

The conductive oxide 430 is formed on the entire surface of the back electrode layer 500 including the metal material 410. That is, the conductive oxide 430 is formed on the plurality of metal materials 410 and is formed on the back electrode layer 500 in a region between the plurality of metal materials 410. In addition, the conductive oxide 430 is Ga, Al. In the group consisting of In or F, a transparent conductive metal oxide such as ZnO or SnOx doped with one or more selected materials may be used. In addition, the conductive oxide 430 formed on the plurality of metal materials 410 causes self-texturing during the deposition process by the sputtering method, and the surface thereof has an uneven structure.

The semiconductor layer 300 is formed on the back reflective layer 400, and may be formed using a silicon-based compound such as amorphous silicon.

The semiconductor layer 300 may be formed in a PIN structure in which a P (positive) type semiconductor layer, an I (Intrinsic) type semiconductor layer, and an N (Negative) type semiconductor layer are sequentially stacked. In this case, the back reflecting layer ( The formation of the N-type semiconductor layer on the semiconductor layer 400 and then the formation of the I-type semiconductor layer and the P-type semiconductor layer is preferable to improve the collection efficiency by incident light because the P-type semiconductor layer is formed close to the light receiving surface. Same as in the example.

The front electrode layer 200 is formed on the semiconductor layer 300.

The front electrode layer 200 may be formed using a transparent conductive material such as ZnO, ZnO: B, ZnO: Al, SnO ₂ , SnO ₂ : F, or ITO (Indium Tin Oxide), and the front electrode layer 200 It is preferable that the surface is formed in the uneven structure.

6A to 6E are schematic cross-sectional views illustrating a manufacturing process of a thin film solar cell according to an embodiment of the present invention, which relates to the manufacturing of the thin film solar cell shown in FIG. In the following, repeated description of the parts already described in the above-described embodiment, such as the material of the component, will be omitted.

First, as shown in FIG. 6A, a metal material 210 is formed on the substrate 100.

The metal material 210 may be formed in a structure in which a plurality of the metal materials 210 are spaced at predetermined intervals, and specifically, may be formed in a dot structure as shown in FIGS. 3A and 3B, and as shown in FIGS. 4A and 4B. It may be formed in a wire (wire) structure.

The metal material 210 may be formed using a liquid coating method or may be formed using a vacuum deposition method.

Method using the liquid coating method, to prepare a dispersion solution by dispersing the metal material 210 of the powder form or the metal material 210 of the wire form in a predetermined solvent, and the slit coating (slit coating), Coating on the substrate 100 using a coating process such as spray coating, bar coating, roll coating, ink coating, or spin coating After that, it may be made, including the step of drying.

In the vacuum deposition method, a metal material 210 is deposited on the substrate 100 using a vacuum deposition process such as sputtering, and then heat is applied to the deposited metal material 210 to be agglomerated with each other. It may be made, including.

The method using the vacuum deposition method includes a step of depositing a metal material 210 on the substrate 100 using a vacuum deposition process such as a sputtering method and then patterning the photolithography method using a photolithography method. It may be.

Next, the conductive oxide 230 is formed on the substrate 100 on which the metal material 210 is formed to form the front electrode layer 200 formed of the metal material 210 and the conductive oxide 230.

The conductive oxide 230 is formed using a sputtering method. When the conductive oxide 230 is deposited on the metal material 210 using the sputtering method as described above, the deposited conductive oxide 230 causes self-texturing to form a surface of the uneven structure.

Meanwhile, the conductive oxide 230 deposited on the substrate 100 in the region between the metal materials 210 may not have a concave-convex structure, and even if the surface has a concave-convex structure, the metal material ( The conductive oxide 230 deposited on the 210 and the surface thereof may not be the same.

For example, in the above-described process of FIG. 6A, when the metal material 210 is deposited on the substrate 100 and then patterned by photolithography, a plurality of metal materials 210 are formed. Only the substrate 100 is exposed purely in an area between the plurality of metal materials 210, and in this case, the surface of the conductive oxide 230 deposited in the area between the plurality of metal materials 210 is formed in an uneven structure. It may not be.

In addition, in the above-described process of FIG. 6A, a dispersion solution is prepared by dispersing a metal material in a powder form in a predetermined solvent, coating the dispersion solution on the substrate 100, and then drying the plurality of metal materials 210. When formed, a solvent or metal residue may remain in an area between the plurality of metal materials 210, and in this case, the surface of the conductive oxide 230 deposited in the area between the plurality of metal materials 210. It may be formed in this uneven structure.

Next, as shown in FIG. 6C, a semiconductor layer 300 is formed on the front electrode layer 200.

The semiconductor layer 300 may form a silicon-based semiconductor material such as amorphous silicon by using a plasma CVD method.

The semiconductor layer 300 forms a P-type semiconductor layer on the front electrode layer 200, and then forms an I-type semiconductor layer on the P-type semiconductor layer, and then N on the I-type semiconductor layer. By forming the type semiconductor layer, it can be formed in a PIN structure.

Next, as can be seen in Figure 6d, to form a back reflective layer 400 on the semiconductor layer (300).

The back reflective layer 400 is sputtered or MOCVD (Metal Organic Chemical Vapor) by a transparent conductive material such as ZnO, ZnO: B, ZnO: Al, SnO ₂ , SnO ₂ : F, or ITO (Indium Tin Oxide). It can be formed using a deposition method and the like.

Next, as shown in FIG. 6E, a back electrode layer 500 is formed on the back reflective layer 400.

The back electrode layer 500 may be formed of a metal material such as Ag, Al, Mo, Ni, Cu, etc. using a sputtering method, and in some cases, by using a metal paste as described above. It can be formed by printing.

7A to 7E are schematic cross-sectional views illustrating a manufacturing process of a thin film solar cell according to another embodiment of the present invention, which relates to the manufacturing of the thin film solar cell shown in FIG. Hereinafter, detailed description of the same parts as in the above-described embodiment will be omitted.

First, as shown in FIG. 7A, the back electrode layer 500 is formed on the substrate 100.

Next, as shown in FIG. 7B, a metal material 410 is formed on the back electrode layer 500.

The metal material 410 is formed in a plurality of spaced apart at predetermined intervals, specifically, may be formed in a dot (dot) structure as shown in Figs. 3a and 3b described above, as shown in Figs. 4a and 4b. It may be formed in a wire (wire) structure.

The metal material 410 may be formed using a liquid coating method or a vacuum deposition method in the same manner as the metal material 210 of the above-described embodiment.

Next, as shown in FIG. 7C, the conductive oxide 430 is formed on the back electrode layer 500 on which the metal material 410 is formed, and thus the back reflection layer formed of the metal material 410 and the conductive oxide 430 ( 400).

The conductive oxide 430 is formed using a sputtering method, and in this case, the conductive oxide 430 deposited on the metal material 410 causes self-texturing so that its surface is formed of an uneven structure. Same as above.

In addition, the conductive oxide 430 deposited on the back electrode layer 500 in the region between the metal materials 410 may not have a concave-convex structure, and the metal material may have a concave-convex structure. The conductive oxide 430 deposited on the 410 and the surface thereof may not be the same.

Next, as shown in FIG. 7D, the semiconductor layer 300 is formed on the back reflective layer 400.

The semiconductor layer 300 is formed of a silicon-based semiconductor material such as amorphous silicon by using a plasma CVD method, and the like to form an N-type semiconductor layer on the back reflection layer 400, and then on the N-type semiconductor layer By forming an I-type semiconductor layer, and then forming a P-type semiconductor layer on the I-type semiconductor layer, it can be formed in a PIN structure.

Next, as shown in FIG. 7E, the front electrode layer 200 is formed on the semiconductor layer 300.

The front electrode layer 200 may be formed using a transparent conductive material such as ZnO, ZnO: B, ZnO: Al, SnO ₂ , SnO ₂ : F, or ITO (Indium Tin Oxide), and the front electrode layer 200 ) Is preferably formed on the surface of the concave-convex structure.

FIG. 8 is a SEM image of the deposition of only the conductive oxide GZO on the substrate by sputtering, and the SEM image of the formation of Ag nanowire, which is a metal material on the substrate, and the deposition of the conductive oxide, GZO, on the substrate. The picture is shown.

As can be seen in FIG. 8 (a), when only GZO, which is a conductive oxide, is deposited on the substrate by sputtering, the surface of the GZO is formed to have a flat structure, whereas as shown in FIG. When Ag nanowires are formed on and GZO is deposited by sputtering thereon, it can be seen that the GZO causes self-texturing so that the surface is formed with an uneven structure.

9 is a SEM image photographed while forming Ag nanowires on a substrate and depositing GZO thereon by sputtering, but changing the deposition thickness of the GZO. FIG. 10 is a deposition thickness of the GZO in FIG. 9. This is a graph showing the change in light scattering degree according to the change.

As can be seen in Figure 9, as the deposition thickness of the GZO becomes thick it can be seen that the uneven structure of the GZO surface increases.

As can be seen in FIG. 10, it can be seen that the light scattering degree is increased when the Ag nanowires are formed after the Ag nanowires are formed, as compared to when only the GZO is deposited. Also, when the deposition thickness of the GZO is 100 nm or more, It can be seen that the increase significantly.

FIG. 11 is a graph showing light-scattering variation by wavelength band when only GZO is deposited on a substrate by sputtering, and when Ag nanowires are formed on a substrate and GZO is deposited on the substrate by sputtering.

As can be seen in FIG. 11, it can be seen that the light scattering degree is increased when Ag nanowires are formed and then GZO is deposited, as compared with when only GZO is deposited over the entire wavelength band.

12 is a graph showing I-V curves when only GZO is deposited on a substrate by sputtering, and when Ag nanowires are formed on a substrate and GZO is deposited on the substrate by sputtering.

As can be seen in FIG. 12, it can be seen that the photoelectric conversion rate is improved by increasing the Jsc and F.F in the case of depositing GZO after forming Ag nanowires compared to the case of depositing only GZO.

100: substrate 200: front electrode layer
300: semiconductor layer 400: rear reflective layer
500: rear electrode layers 210, 410: metal material
230, 430: conductive oxide

Claims (10)

Board;
A front electrode layer formed on the substrate;
A semiconductor layer formed on the front electrode layer; And
It comprises a back electrode layer formed on the semiconductor layer,
The front electrode layer is formed of a plurality of metal materials spaced apart at predetermined intervals on the substrate and a conductive oxide formed on the metal material, the conductive oxide formed on the metal material is a thin film type, characterized in that the surface of the concave-convex structure Solar cells. The method of claim 1,
Thin film type solar cell, characterized in that the back reflection layer is further formed between the semiconductor layer and the back electrode layer. Board;
A rear electrode layer formed on the substrate;
A rear reflective layer formed on the rear electrode layer;
A semiconductor layer formed on the back reflective layer; And
It comprises a front electrode layer formed on the semiconductor layer,
The back reflecting layer is formed of a plurality of metal materials and conductive oxides formed on the metal material spaced apart at predetermined intervals on the back electrode layer, the conductive oxide formed on the metal material is characterized in that the surface of the concave-convex structure Thin film solar cell. 4. The method according to any one of claims 1 to 3,
Each of the plurality of metal materials includes a wire structure or a dot structure. 4. The method according to any one of claims 1 to 3,
Thin film solar cell, characterized in that the conductive oxide is further formed in the region between the metal material. Forming a plurality of metal materials spaced at predetermined intervals on the substrate;
Forming a conductive oxide on the substrate on which the metallic material is formed by using a sputtering method to form a front electrode layer made of the metallic material and the conductive oxide;
Forming a semiconductor layer on the front electrode layer; And
A method of manufacturing a thin film solar cell comprising the step of forming a back electrode layer on the semiconductor layer. The method of claim 6,
And forming a back reflective layer between the step of forming the semiconductor layer and the step of forming the back electrode layer. Forming a back electrode layer on the substrate;
Forming a plurality of metal materials spaced at predetermined intervals on the back electrode layer;
Forming a conductive oxide on the back electrode layer on which the metal material is formed by using a sputtering method to form a back reflection layer made of the metal material and the conductive oxide;
Forming a semiconductor layer on the back reflective layer; And
A method of manufacturing a thin film solar cell comprising the step of forming a front electrode layer on the semiconductor layer. 9. The method according to any one of claims 6 to 8,
In the process of forming a plurality of metal materials spaced at predetermined intervals, a metal solution in powder form or a metal material in wire form is dispersed in a predetermined solvent to prepare a dispersion solution, and the dispersion solution is coated using a coating process. After that, the manufacturing method of the thin-film solar cell comprising the step of drying. 9. The method according to any one of claims 6 to 8,
The process of forming a plurality of metal materials spaced at a predetermined interval may include depositing metal materials using a vacuum deposition process, and then applying heat or depositing the deposited metal materials to agglomerate the metal materials. A method of manufacturing a thin film solar cell, comprising the step of patterning using a method.

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