KR20120023595A - Adhesive film and semiconductor wafer processing tape - Google Patents

Abstract

Even if the adhesive is picked up in a state where it is attached to the adhesive layer, there is provided an adhesive film and a tape for processing a semiconductor wafer, which can reduce the occurrence of reflow cracking in the package. The adhesive film of this invention consists of a base film and the adhesive layer provided on the said base film, is an adhesive film used in order to process a semiconductor wafer, and the weight of the said adhesive layer in the reflow temperature measured by the differential thermal analysis The reduction is 1.5% or less. Moreover, the tape for a semiconductor wafer process of this invention is a wafer process tape which has the adhesive film which consists of a base film and the adhesive layer provided on the said base film, and the adhesive bond layer provided on the adhesive layer, and measured the reflow by differential thermal analysis. The weight reduction of the pressure-sensitive adhesive layer at a temperature is 1.5% or less.

Description

Adhesive film and tape for semiconductor wafer processing {ADHESIVE FILM AND SEMICONDUCTOR WAFER PROCESSING TAPE}

TECHNICAL FIELD This invention relates to the adhesive film and tape for a semiconductor wafer process used to cut a semiconductor wafer into a semiconductor chip, and to manufacture a semiconductor device.

As a tape for semiconductor wafer processing used for the manufacturing process of a semiconductor device, the tape for semiconductor wafer processing which has a structure by which the adhesive bond layer (die bonding film) was laminated | stacked on the adhesive film (dicing tape) is proposed (for example, the following patent document) 1), it has already been put to practical use.

In the manufacturing process of a semiconductor device, after attaching the tape for a semiconductor wafer process to a semiconductor wafer, the process of cutting (dicing) a semiconductor wafer by a chip unit using a dicing blade, the process of expanding the tape for a semiconductor wafer process, Furthermore, Picking up the cut chip from the pressure-sensitive adhesive layer together with the adhesive layer, mounting the chip on the substrate through the adhesive layer attached to the chip, sealing the chip adhered to the substrate, and then passing it through the reflow furnace do.

Japanese Patent Laid-Open No. 02-32181

However, in the tape for semiconductor wafer processing described in the patent document 1, if the time between the pressure-sensitive adhesive layer and the adhesive layer is long between manufacture and use, both layers are fused before use to pick up the cut chip. , The adhesive may be picked up in a state where it is attached to the adhesive layer. In such a state, when the chip bonded to the substrate or the like is sealed and then passed through the reflow furnace, there is a problem that reflow cracking may occur.

Therefore, an object of the present invention is an adhesive film which can reduce the occurrence of reflow cracks in a package even when the adhesive layer is fused with the adhesive layer and picked up with the adhesive attached to the adhesive layer when picking up the chip. And a tape for semiconductor wafer processing.

In order to solve the said subject, the adhesive film of this invention consists of a base film and the adhesive layer provided on the said base film, It is an adhesive film used in order to process a semiconductor wafer, The reflow temperature measured by the differential thermal analysis The weight reduction of the pressure-sensitive adhesive layer in is characterized in that 1.5% or less.

Moreover, it is an adhesive film which consists of a base film and the adhesive layer provided on the said base film, and is used in order to process a semiconductor wafer, and the weight reduction of the said adhesive layer in 260 degreeC measured by the differential thermal analysis is 1.5% or less. It is characterized by.

Moreover, in order to solve the said subject, the semiconductor wafer processing tape of this invention is a tape for wafer processing which has an adhesive film which consists of a base film and an adhesive layer provided on the said base film, and the adhesive bond layer provided on the said adhesive layer, The weight reduction of the pressure-sensitive adhesive layer at the reflow temperature measured by thermal analysis is characterized by being 1.5% or less.

Moreover, the tape for a semiconductor wafer process of this invention is a tape for a wafer process which has the adhesive film which consists of a base film and the adhesive layer provided on the said base film, and the adhesive bond layer provided on the said adhesive layer, and measured 260 by the differential thermal analysis. The weight loss of the pressure-sensitive adhesive layer at ℃ ℃ is characterized in that 1.5% or less.

Moreover, the tape for a semiconductor wafer process of this invention is characterized by the weight average molecular weight of an adhesive layer being 1 million or more.

Moreover, the tape for a semiconductor wafer process of this invention contains a photoinitiator, and the thermal decomposition start temperature of the said photoinitiator is 260 degreeC or more, It is characterized by the above-mentioned.

The adhesive film of this invention and the tape for a semiconductor wafer process can reduce that a reflow crack generate | occur | produces in a package, even when the adhesive is picked up in the state stuck to the adhesive bond layer, when picking up a chip | tip.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows an example of the tape for a semiconductor wafer process of this invention.
(A) is sectional drawing which shows the state in which the semiconductor wafer W and the ring frame were joined to the tape for a semiconductor wafer processing, (b) is sectional drawing which shows the semiconductor wafer processing tape and semiconductor wafer after dicing, (c) is sectional drawing which shows the tape for a semiconductor wafer process and a semiconductor wafer after expansion.

EMBODIMENT OF THE INVENTION Below, embodiment of this invention is described in detail based on drawing.

The tape 15 for semiconductor wafer processing which concerns on this embodiment has the adhesive film 14 in which the adhesive layer 12 was laminated | stacked on the base film 11, as shown in FIG. It is a dicing die-bonding film by which the adhesive bond layer 13 was laminated | stacked. In addition, the adhesive layer 12 and the adhesive bond layer 13 may be cut | disconnected (precut) to a predetermined shape previously according to a use process and an apparatus. In the case where the precut adhesive layer 13 is laminated in accordance with the wafer W (see FIG. 2A), the adhesive layer 13 is provided at the portion to which the wafer W is bonded, and the ring frame for dicing is used. In the part to which (20) (refer FIG. 2 (a)) is bonded, there is no adhesive bond layer 13, and only the adhesive layer 12 exists. In general, since the adhesive layer 13 is difficult to peel off from the adherend, by using the precut adhesive layer 13, the ring frame 20 can be bonded to the pressure-sensitive adhesive layer 12, and the ring after use The effect of hardly generating adhesive residue on the frame 20 is obtained. Moreover, the tape 15 for a semiconductor wafer process of this invention includes the form cut | disconnected and laminated | stacked for every one sheet of wafer, and the form which wound the long sheet in which it was formed in multiple numbers in roll shape. Below, the base film 11, the adhesive layer 12, and the adhesive bond layer 13 are demonstrated in detail, respectively.

<Substrate film>

Although it does not specifically limit as a material which comprises a base film, What is chosen from polyolefin and polyvinyl chloride is preferable. Moreover, 1 micrometer or less is preferable and, as for the surface roughness Ra of the surface which contact | connects an adhesive, More preferably, it is 0.5 micrometer or less. By making surface roughness Ra into 1 micrometer or less, the contact area with an adhesive can be increased and it can suppress that an adhesive peels from a base film.

Examples of the polyolefin include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, Homopolymers or copolymers of α-olefins such as ethylene-acrylic acid copolymers and ionomers, or mixtures thereof.

When using the type which hardens by radiation irradiation and adhesive force falls as an adhesive layer mentioned later, it is preferable that a base film is radiation-transmissive. It is preferable that the thickness of a base film is 50-300 micrometers from a viewpoint of ensuring the strength and pick-up property of a chip | tip. In addition, a base film may be single | mono layer, or may be comprised by multiple layers.

<Adhesive layer>

An adhesive layer can be manufactured by apply | coating an adhesive on a base film. There is no restriction | limiting in particular as an adhesive layer, What is necessary is just to have the holding property that the adhesive layer and a semiconductor wafer do not peel at the time of expansion, and the adhesive layer and the characteristic which is easy to peel at the time of pick-up. In order to improve pick-up property, it is preferable that an adhesive layer is radiation curable.

For example, known chlorinated polypropylene resins, acrylic resins, polyester resins, polyurethane resins, epoxy resins, addition reaction type organopolysiloxane resins, silicone acrylate resins, ethylene-vinyl acetate copolymers used in pressure-sensitive adhesives, The radiation polymerizable compound is suitably blended with various elastomers such as ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, polyisoprene, styrene-butadiene copolymer, hydrogenated products thereof, and mixtures thereof. It is preferable to prepare an adhesive. Moreover, you may add various surfactant and surface leveling agent. Although the thickness of an adhesive layer is not specifically limited, What is necessary is just to set it suitably, 1-30 micrometers is preferable.

The polymerizable compound is a low molecular weight compound having at least two or more photopolymerizable carbon-carbon double bonds in a molecule which can be three-dimensionally networked by light irradiation, or a polymer having a photopolymerizable carbon-carbon double bond group as a substituent. Or oligomers are used. Specifically, trimethylol propane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene Copolymers of acrylic acid and various acrylic esters, such as glycol acrylate, 1,6 hexanediol diacrylate, polyethyleneglycol diacrylate, and silicone acrylate, such as oligoester acrylate, are applicable.

In addition to the above acrylate compounds, urethane acrylate oligomers may also be used. The urethane acrylate oligomer is a polyol compound such as a polyester type or a polyether type, and a polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene di Acrylate or methacrylate which has a hydroxyl group in the terminal isocyanate urethane prepolymer obtained by making isocyanate, 1, 4- xylylene diisocyanate, diphenylmethane 4, 4- diisocyanate etc. react (for example, 2- Hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate, and the like). In addition, 2 or more types chosen from said resin may be mixed with the adhesive layer. Moreover, it is preferable that the material of the adhesive enumerated above contains as many nonpolar groups as possible in a molecular structure, such as a trifluoromethyl group, a dimethylsilyl group, and a long chain alkyl group, after making surface free energy into 40 mJ / m <2> or less.

Moreover, in addition to the radiation polymeric compound which irradiates a base film to irradiate radiation to a base film, and hardens an adhesive layer, acrylic adhesive, a photoinitiator, a hardening | curing agent, etc. can be mix | blended suitably to resin of an adhesive layer, and an adhesive can also be manufactured.

When using a photoinitiator, For example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chloro thioxanthone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone, Benzyl dimethyl ketal, α-hydroxycyclohexylphenyl ketone, 2-hydroxymethylphenylpropane and the like can be used. 0.01-30 mass parts is preferable with respect to 100 mass parts of acrylic copolymers, and, as for the compounding quantity of these photoinitiators, 1-10 weight part is more preferable.

If the low molecular weight component is present in the pressure sensitive adhesive, the low molecular weight component may migrate to the surface of the pressure sensitive adhesive layer and damage the adhesive properties during long-term storage after production of the base film. It is 60% or more, Preferably it is 70% or more. Here, a gel fraction means what is computed as follows. After weighing about 0.05 g of the pressure-sensitive adhesive layer, it was immersed in 50 ml of xylene at 120 ° C. for 24 hours, filtered through a 200 mesh stainless steel gold mesh, and the insoluble content on the gold mesh was dried at 110 ° C. for 120 minutes. Subsequently, the mass of dry insoluble content is weighed, and a gel fraction is computed by following formula (1).

The pressure-sensitive adhesive layer has a weight loss of 1.5% or less at the reflow temperature measured by differential thermal analysis (TG-DTA). Here, the reflow temperature is a peak package body temperature (Tp) of the package body, and when the Joint Electron Device Engineering Council (JEDEC) determines a classification temperature (Tc), the classification is performed. Let temperature be the peak temperature. The weight reduction of the pressure-sensitive adhesive layer is a weight reduction of the pressure-sensitive adhesive layer in a state where reflow is performed. That is, in the case of a radiation-curable pressure-sensitive adhesive layer, the reflow is performed after radiation is irradiated and cured, so that the weight loss when the pressure-sensitive adhesive in this state is heated at a reflow temperature for a required time is 1.5% or less. If the weight reduction when the required time is heated at the reflow temperature of the pressure-sensitive adhesive layer is 1.5% or less, even if reflow is performed in a state where the pressure-sensitive adhesive is attached to the adhesive layer, generation of exhaust gas accompanying thermal decomposition of the pressure-sensitive adhesive is suppressed. . As a result, the occurrence of reflow cracks can be reduced. Since the reflow temperature of lead-free solder is about 260 degreeC, it is preferable that the weight loss of 260 degreeC of the adhesive layer measured by differential thermal analysis (TG-DTA) is 1.5% or less.

In order to suppress the weight loss by heating of an adhesive, the glass transition temperature Tg of the base polymer of an adhesive may be -50 degreeC or more, or the weight average molecular weight of an adhesive layer may be 1 million or more. Moreover, you may combine what makes the decomposition temperature of a photoinitiator 260 degreeC or more.

<Adhesive layer>

After the semiconductor wafer is bonded and cut, the adhesive layer peels off from the adhesive layer and adheres to the chip when picking up the chip, and functions as a bonding film when the chip is fixed to the package substrate or lead frame. It is.

The adhesive layer is obtained by film-forming an adhesive in advance, and for example, a known polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, polyester resin, polyesterimide resin, phenoxy Resins, polysulfone resins, polyethersulfone resins, polyphenylene sulfide resins, polyether ketone resins, chlorinated polypropylene resins, acrylic resins, polyurethane resins, epoxy resins, polyacrylamide resins, melamine resins, and mixtures thereof. Although the adhesiveness of the adhesive layer 13 may be improved, it is preferable that an acrylic copolymer and an epoxy resin are included and Tg of an acrylic copolymer is 10 degreeC or more. Furthermore, it is preferable to contain 50% or more of inorganic fillers. Moreover, in order to strengthen the adhesive force to a chip | tip or a lead frame, it is preferable to add a silane coupling agent or a titanium coupling agent as an additive to the said material or its mixture. Although the thickness of an adhesive bond layer is not specifically limited, Usually, about 5-100 micrometers is preferable.

The epoxy resin is not particularly limited as long as it is cured and exhibits an adhesive action. However, the epoxy resin may be at least two functional groups, and preferably an epoxy resin having a molecular weight of less than 5000, more preferably less than 3000. In addition, an epoxy resin having a molecular weight of preferably 500 or more, more preferably 800 or more can be used.

For example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, bisphenol A novolak Type epoxy resins, diglycidyl ethers of biphenols, diglycidyl ethers of naphthalenediol, diglycidyl ethers of phenols, diglycidyl ethers of alcohols, alkyl substituents thereof, and halogens Bifunctional epoxy resins, such as a cargo and a hydrogenated substance, and a novolak-type epoxy resin are mentioned. Moreover, what is generally known, such as a polyfunctional epoxy resin and a heterocyclic containing epoxy resin, can also be applied. These can be used individually or in combination of 2 or more types. Moreover, components other than an epoxy resin may be contained as an impurity in the range which does not impair a characteristic.

As an acryl-type copolymer, an epoxy group containing acrylic copolymer can be used, for example. The epoxy group-containing acrylic copolymer contains 0.5 to 6% by weight of glycidyl acrylate or glycidyl methacrylate having an epoxy group. In order to obtain a high adhesive force, 0.5 weight% or more is preferable and gelatinization can be suppressed as it is 6 weight% or less.

The amount of glycidyl acrylate or glycidyl methacrylate to be used as the functional group monomer is a copolymer ratio of 0.5 to 6% by weight. That is, in this invention, an epoxy-group containing acrylic copolymer refers to the copolymer obtained using glycidyl acrylate or glycidyl methacrylate in the quantity which becomes 0.5 to 6 weight% with respect to the copolymer obtained as a raw material. The remaining portion thereof may be a mixture of alkyl acrylate, alkyl methacrylate, and styrene or acrylonitrile having an alkyl group having 1 to 8 carbon atoms such as methyl acrylate and methyl methacrylate. Among these, ethyl (meth) acrylate and / or butyl (meth) acrylate are especially preferable. It is preferable to adjust a mixing ratio in consideration of Tg of a copolymer. There is no restriction | limiting in particular in polymerization method, For example, pearl polymerization, solution polymerization, etc. are mentioned, A copolymer is obtained by these methods. The weight average molecular weight of an epoxy-group-containing acrylic copolymer is 100,000 or more, adhesiveness and heat resistance are high in this range, It is preferable that it is 300,000-3 million, and it is more preferable that it is 500,000-2 million. If it is 3 million or less, since flow property falls, the possibility of the chargeability to the wiring circuit formed as needed in the support member to which a semiconductor element is affixed can be reduced.

In addition, in this specification, a weight average molecular weight is a polystyrene conversion value using the analytical curve by standard polystyrene by gel permeation chromatography method (GPC).

There is no restriction | limiting in particular as an inorganic filler, For example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline Silica, amorphous silica, etc. are mentioned. These can also use together 1 type (s) or 2 or more types. In order to improve thermal conductivity, aluminum oxide, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable. In terms of balance of properties, silica is preferred.

It is preferable that the average particle diameter of a filler is 0.002-2 micrometers, It is more preferable that it is 0.008-0.5 micrometer, It is still more preferable that it is 0.01-0.05 micrometer. When the average particle diameter of the filler is less than 0.002 µm, the wettability to the adherend tends to decrease, and when the average particle diameter exceeds 2 µm, the reinforcing effect by the addition of the filler decreases and the heat resistance tends to decrease. Here, an average particle diameter means the average value calculated | required from the particle diameter of 100 fillers measured by TEM, SEM, etc.

Next, the method of manufacturing the semiconductor chip with an adhesive bond layer using the tape 15 for a semiconductor wafer process of this invention shown in FIG. 1 is demonstrated, referring FIG.

(Bonding process)

First, as shown to Fig.2 (a), the back surface of the semiconductor wafer W is bonded to the adhesive bond layer 13 of the tape 15 for a semiconductor wafer process, and it is located in the predetermined position of the adhesive layer 12. The ring frame 20 is joined.

Dicing Process

By the adsorption stage 22, the wafer processing tape 15 is adsorbed and supported on the substrate film 12 surface side, and the semiconductor wafer W is mechanically cut using a blade (not shown) to form a plurality of semiconductor chips (C). (B) of FIG. 2. At this time, a part of the adhesive layer 13, the pressure-sensitive adhesive layer 12, and the base film 11 is also appropriately diced.

(Investigation process)

And the radiation layer is irradiated to the adhesive layer 12 from the lower surface of the base film 11, and the adhesive layer 12 is hardened. Since the adhesive force of the cured adhesive layer 12 falls, it becomes possible to peel off the adhesive bond layer 13 on the adhesive layer 12. FIG. In the case where the pressure-sensitive adhesive layer is composed of a plurality of layers, the entire pressure-sensitive adhesive layer does not need to be cured in order to peel the adhesive layer 13 from the pressure-sensitive adhesive layer 12, and at least the pressure-sensitive adhesive layer portion corresponding to the wafer may be cured. .

(Expand Process)

After the irradiation step, the semiconductor wafer processing tape 15 holding the divided semiconductor chips C is loaded on the stage 21 of the expander. And as shown in FIG.2 (c), the hollow cylindrical pushing-up member 23 is raised from the lower surface side of the tape 15 for semiconductor wafer processing, and the said base film 11 is ring-ring 20 ) Stretch in the radial and circumferential directions.

(Pick-up process)

After performing an expand process, the pick-up process of picking up the chip | tip C is performed in the state which expanded the adhesive film. Specifically, the chip is pushed up from the lower side of the pressure-sensitive adhesive film 14 by a pin (not shown), and the chip C is sucked by an adsorption jig (not shown) from the upper surface side of the pressure-sensitive adhesive film 14. Thereby, the chip C separated into pieces is picked up together with the adhesive layer 13.

(Die bonding process)

And after performing a pick-up process, a die bonding process is performed. Specifically, the semiconductor chip is bonded to a lead frame, a package substrate, or the like by the adhesive layer picked up together with the chip C in the pickup step.

(Reflow process)

After sealing the board | substrate etc. which mounted a semiconductor chip with a sealing material, in order to melt the solders, such as the solder ball arrange | positioned at a semiconductor chip, and to obtain the conduction of a semiconductor chip and a board | substrate, it is made to pass through a reflow furnace, and a semiconductor device Get Here, since the pressure-sensitive adhesive layer has a weight reduction of the pressure-sensitive adhesive layer at a reflow temperature measured by differential thermal analysis of 1.5% or less, even if the pressure-sensitive adhesive is reflowed in a state where the pressure-sensitive adhesive is attached to the adhesive layer, it is accompanied by thermal decomposition of the pressure-sensitive adhesive. The generation of discharge gas to be suppressed is suppressed.

As described above, even when the adhesive is picked up in the state where the adhesive is attached to the adhesive layer when picking up the chip, it is possible to reduce the occurrence of reflow cracking in the package.

Next, although the Example of this invention is described, this invention is not limited to these Examples.

First, the pressure-sensitive adhesive compositions 1 to 9 were prepared, and then the pressure-sensitive adhesive compositions 1 to 9 were applied to the ethylene-vinyl acetate copolymer film (base film) having a thickness of 100 μm so that the thickness after drying of the pressure-sensitive adhesive composition was 10 μm, respectively. After drying at 110 degreeC for 3 minutes, it left still for 3 weeks in 23 +/- 5 degreeC 45% environment, and obtained the adhesive film. Subsequently, adhesive compositions 1 to 2 were prepared, and adhesive compositions 1 to 2 were respectively applied to a release liner made of a polyethylene-terephthalate film obtained by releasing the adhesive composition so that the thickness after drying was 20 μm, and at 110 ° C. It dried for 3 minutes and created the adhesive film. And the adhesive film and the adhesive film were cut | disconnected circularly of diameter 370mm and 320mm, respectively, and the adhesive bond layer of an adhesive film is bonded by the combination shown in Table 1 to the adhesive layer side of an adhesive film, and Examples 1-6 and Comparative Example 1 The dicing die-bonding film concerning 1-3 was created. Below, the adjustment method of adhesive composition 1-8 and adhesive composition 1-2 is shown.

(Preparation of Adhesive Composition)

(Adhesive Composition 1)

In 400 g of toluene which is a solvent, the amount of benzoyl peroxide mixed as 340 g of isooctyl acrylate, 13 g of methyl methacrylate, 60 g of hydroxyacrylate, 0.5 g of methacrylic acid, and a polymerization initiator is appropriately adjusted, It added, and adjusted reaction temperature and reaction time, and obtained the solution of the compound (1) of the weight average molecular weight 800,000. It was -49 degreeC when Tg of the compound (1) was measured by differential scanning calorimetry (DSC: differential scanning calorimetry). Subsequently, 2 parts by weight of collonate L (manufactured by Nippon Polyurethane Co., Ltd.) was added as a polyisocyanate to 100 parts by weight of the compound (1) in the solution, and ethyl acetate was used as a solvent. 300 weight part was added and stirred, and the adhesive composition 1 was obtained.

(Adhesive Composition 2)

To the solution of compound (1), 2.5 g of 2-isocyanatoethyl methacrylate as a compound having a radioactive curable carbon-carbon double bond and a functional group and a hydroquinone as a polymerization inhibitor are appropriately added in an amount dropwise added, , Reaction temperature and reaction time were adjusted to obtain a solution of compound (2) having a radioactive curable carbon-carbon double bond. It was -49 degreeC when Tg of the compound (2) was measured in DSC. Subsequently, 2 parts by weight of colonate L is added as a polyisocyanate to 100 parts by weight of the compound (2) in the solution, and Irgacure 184 (manufactured by Shiba Kaigi Co., Ltd.) as a photopolymerization initiator is added to the solution of the compound (2). 300 weight part of ethyl acetate was added as 1 weight part and a solvent, and it stirred and obtained the adhesive composition 2.

(Adhesive Composition 3)

In 400 g of toluene which is a solvent, the amount of benzoyl peroxide mixed as 340 g of isooctyl acrylate, 3 g of methyl methacrylate, 60 g of hydroxyacrylate, 0.5 g of methacrylic acid, and a polymerization initiator is appropriately adjusted, After adding and adjusting reaction temperature and reaction time to obtain the weight average molecular weight 500,000 compound, 2.5 g of 2-isocyanatoethyl methacrylate as a compound which has a radioactive curable carbon-carbon double bond, and a functional group, a polymerization inhibitor Hydroquinone was added and adjusted as appropriate, and the reaction temperature and reaction time were adjusted, and the solution of the compound (3) which has a radioactive curable carbon-carbon double bond was obtained. It was -52 degreeC when Tg of the compound (3) was measured in DSC. Subsequently, 0.7 weight part of colonate L is added as a polyisocyanate with respect to 100 weight part of compounds (3) in a solution, 1 weight part Irgacure 184 as a photoinitiator, and acetic acid as a solvent to the solution of compound (3). 300 weight part ethyl was added and stirred, and the adhesive composition 3 was obtained.

(Adhesive Composition 4)

In 400 g of toluene, 443 g of n-butylacrylates, 80 g of methyl methacrylates, 100 g of hydroxyacrylates, 7 g of methacrylic acid, and the mixed liquid of benzoyl peroxide are added suitably as a polymerization initiator, and it is added. After adjusting the reaction temperature and the reaction time to obtain a compound having a weight average molecular weight of 200,000, 2.5 g of 2-isocyanatoethyl methacrylate as a compound having a radioactive curable carbon-carbon double bond and a functional group and a polymerization inhibitor Hydroquinone was appropriately added in an amount dropwise added, and the reaction temperature and reaction time were adjusted to obtain a solution of compound (4) having a radioactive curable carbon-carbon double bond. It was -36 degreeC when Tg of the compound (4) was measured in DSC. Subsequently, 0.5 weight part of colonate L is added as a polyisocyanate with respect to 100 weight part of compounds (4) in a solution, 1 weight part of Irgacure 184 as a photoinitiator, and acetic acid as a solvent to the solution of compound (4). 300 weight part ethyl was added and stirred, and the adhesive composition 4 was obtained.

(Adhesive Composition 5)

To the solution of compound (4), 0.7 parts by weight of colonate L was added as polyisocyanate to 100 parts by weight of compound (4) in the solution, 1 part by weight of Irgacure 2959 as a photopolymerization initiator, and ethyl acetate as a solvent. 300 weight part was added and stirred, and the adhesive composition 5 was obtained.

(Adhesive Composition 6)

In 400 g of toluene which is a solvent, 200 g of lauryl acrylates, 100 g of 2-ethylhexyl acrylates, 10 g of methacrylic acid, and a mixed liquid of benzoyl peroxide are added suitably as a polymerization initiator, and reaction temperature is added. And after adjusting the reaction time to obtain a compound having a weight average molecular weight of 800,000, 2.5 g of 2-isocyanatoethyl methacrylate as a compound having a radioactive curable carbon-carbon double bond and a functional group and hydroquinone as a polymerization inhibitor as appropriate. Dropping amount was adjusted and added, reaction temperature and reaction time were adjusted, and the solution of the compound (5) which has a radioactive curable carbon-carbon double bond was obtained. It was -20 degreeC when Tg of the compound (5) was measured in DSC. Subsequently, to the solution of compound (5), 1 part by weight of colonate L was added as polyisocyanate to 100 parts by weight of compound (5) in the solution, 1 part by weight of Irgacure 907 as a photopolymerization initiator, and the pressure-sensitive adhesive composition 6 was added. Got it.

(Adhesive Composition 7)

In 400 g of toluene, which is a solvent, n-butyl acrylate 340 g, hydroxy acrylate 70 g, methacrylic acid 3.5 g, a mixed solution of benzoyl peroxide as a polymerization initiator are appropriately added dropwise, and the reaction temperature and After adjusting the reaction time to obtain a compound having a weight average molecular weight of 900,000, 2.5 g of 2-isocyanatoethyl methacrylate as a compound having a radioactive curable carbon-carbon double bond and a functional group, and hydroquinone as a polymerization inhibitor are appropriately added dropwise. The amount was adjusted and added, reaction temperature and reaction time were adjusted, and the solution of the compound (6) which has a radioactive curable carbon-carbon double bond was obtained. It was -49 degreeC when Tg of the compound (6) was measured in DSC. Subsequently, 1 weight part of Irgacure 651 was added to the solution of compound (6) as a photoinitiator with respect to 100 weight part of compounds (6) in solution, and the adhesive composition 7 was obtained.

(Adhesive Composition 8)

In 400 g of toluene which is a solvent, n-butyl acrylate 340 g, methyl methacrylate 13 g, hydroxy acrylate 7 g, methacrylic acid 0.5 g, and a dropping amount of benzoyl peroxide as a polymerization initiator are appropriately adjusted. And the reaction temperature and the reaction time were adjusted to obtain a solution of the compound (7) having a weight average molecular weight of 50,000. It was -52 degreeC when Tg of the compound (7) was measured in DSC. Subsequently, 2 weight part of colonate L is added as a polyisocyanate with respect to 100 weight part of compounds (7) in a solution, 300 weight part of ethyl acetate is added as a solvent, it stirred, and the adhesive composition was added to the solution of compound (7). 8 was obtained.

The thermal decomposition start temperature of each photoinitiator was Irgacure 2959 million and 260 degreeC or more, and Irgacure 907, 651, and 184 were less than 260 degreeC.

(Production of Adhesive Composition)

(Adhesive Composition 1)

As an epoxy resin, 15 weight part of cresol novolak-type epoxy resins (epoxy equivalent 197, molecular weight 1200, softening point 70 degreeC), 70 weight part of acrylic resin (mass average molecular weight: 800,000, glass transition temperature -17 degreeC), and a phenol no. As a hardening | curing agent 15 parts by weight of a volac resin (hydroxyl equivalent 104, softening point 80 ° C.) and one part of cursol 2PZ (manufactured by Shikoku Chemical Co., Ltd., product name: 2-phenylimidazole) as an accelerator were obtained in an organic solvent to obtain an adhesive composition 1. .

(Adhesive Composition 2)

5 weight part of cresol novolak-type epoxy resins (epoxy equivalent 197, molecular weight 1200, softening point 70 degreeC) as an epoxy resin, 0.5 mass part of 3-glycidoxy propyl trimethoxysilane as a silane coupling agent, a silica filler of 1.0 micrometer of average particle diameters Synthesized from 50 parts by mass, 2,2'-bis [4- (4-aminophenoxy) phenyl] propane, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride and pyromellitic anhydride 40 parts by mass of a polyimide resin having a mass average molecular weight of 50,000 and 5 parts by weight of a phenol novolak resin (hydroxyl equivalent 104, softening point of 80 ° C.) as a curing agent and 1 part of cursol 2PZ as an accelerator were stirred in an organic solvent to obtain an adhesive composition 2.

Evaluation of the Example and the comparative example was performed as follows.

<Measurement of Average Molecular Weight of Adhesive>

Only the adhesive was scraped off from the pressure-sensitive adhesive film produced using the pressure-sensitive adhesive composition, and measured using a polystyrene conversion value using a calibration curve with standard polystyrene by gel permeation chromatography (GPC). The following conditions were used for the measurement.

GPC device: HLC-8120GPC manufactured by Tosoh Corporation

Column: TSK gel SuperH5000, flow rate: 0.6 ml / min

Concentration: 0.3 mass%, Injection volume: 20 µl

Column temperature: 40 ° C., eluent: tetrahydrofuran.

<Measurement of weight loss>

Ultraviolet was irradiated 200 mJ / cm <2> with the adhesive layer of the dicing die bonding film which concerns on Examples 1-6 and Comparative Examples 1-3 by an air-cooled high pressure mercury lamp (80 W / cm, irradiation distance 10 cm). For Examples 1 to 6 and Comparative Examples 1 to 3 after ultraviolet irradiation, differential thermal analysis (TG-DTA) by thermogravimetric measurement was performed, and the weight in the measuring vessel was changed from room temperature to 300 ° C. The reduction was measured and the weight loss at 220 ° C. and 260 ° C. was obtained. The sample amount was about 10 mg, and the temperature was changed at a rate of 10 ° C / min. The results are shown in Table 1.

<Reflow Resistance>

The adhesive layer of the dicing die-bonding film which concerns on an Example and a comparative example is attached to the back surface of the silicon wafer of 200 micrometers in thickness, dicing to 7.5 mm x 7.5 mm, and the chip | tip with an adhesive layer is peeled from an adhesive layer. X-ray photoelectron spectroscopy (XPS) showed that the amount of carbon derived from the transfer contaminant of the pressure-sensitive adhesive was picked up from 20 chips having 5 atomic percent or more compared with the blank, and then 180 ° C, 10 N, on a glass epoxy substrate. Mount at 5 sec conditions. In addition, a reflow sample was produced by molding with a sealing material (manufactured by Kyocera Chemical Co., Ltd.). The sample after sealing was treated in a constant temperature and humidity layer at 85 ° C./85% RH for 168 hours, and then heated at 220 ° C. for 60 seconds as a eutectic solder process, or at 260 ° C. for 60 seconds as a lead-free solder process, It was observed by the ultrasonic imaging apparatus (SAT) by Hitachi Genki Co., Ltd., and the presence or absence of the package crack was investigated. Table 1 shows the number of packages in which package cracks were observed for all 20 packages.

In the comparative example, since the weight loss in 220 degreeC and 260 degreeC all exceeded 1.5%, the crack was observed in most packages. On the other hand, in Examples 1-6, since the weight reduction in 220 degreeC and 260 degreeC is all 1.5% or less, the crack was not observed in all the packages.

As described above, even when the adhesive is picked up in a state where the adhesive is attached to the adhesive layer, the occurrence of reflow cracks in the package can be reduced.

11: base film
12: adhesive layer
13: adhesive layer
14: adhesive film
15: Tape for Semiconductor Wafer Processing
20: ring frame
21: stage
22: adsorption stage
23: lifting member

Claims (6)

It is an adhesive film which consists of a base film and the adhesive layer provided on the said base film, and is used in order to process a semiconductor wafer, and the weight reduction of the said adhesive layer in the reflow temperature measured by the differential thermal analysis is 1.5% or less. An adhesive film characterized by the above-mentioned. It is an adhesive film which consists of a base film and the adhesive layer provided on the said base film, and is used in order to process a semiconductor wafer, The weight reduction of the said adhesive layer in 260 degreeC measured by the differential thermal analysis is 1.5% or less, It is characterized by the above-mentioned. Adhesive film made with. It is a tape for wafer processing which has an adhesive film which consists of a base film and an adhesive layer provided on the said base film, and the adhesive bond layer provided on the said adhesive layer, The weight reduction of the said adhesive layer at the reflow temperature measured by the differential thermal analysis. Is 1.5% or less, The tape for semiconductor wafer processing. It is a tape for wafer processing which has an adhesive film which consists of a base film and an adhesive layer provided on the said base film, and the adhesive bond layer provided on the said adhesive layer, and the weight reduction of the said adhesive layer in 260 degreeC measured by the differential thermal analysis It is 1.5% or less, The tape for a semiconductor wafer process. The weight average molecular weight of the said adhesive layer is 1 million or more, The tape for a semiconductor wafer process of any one of Claims 1-4 characterized by the above-mentioned. The said adhesive layer contains a photoinitiator, and the thermal decomposition start temperature of the said photoinitiator is 260 degreeC or more, The tape for a semiconductor wafer process of any one of Claims 1-5 characterized by the above-mentioned.

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