KR20120009765A - Light-emitting device and method of manufacturing the same - Google Patents

Light-emitting device and method of manufacturing the same Download PDF

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Publication number
KR20120009765A
KR20120009765A KR1020100070397A KR20100070397A KR20120009765A KR 20120009765 A KR20120009765 A KR 20120009765A KR 1020100070397 A KR1020100070397 A KR 1020100070397A KR 20100070397 A KR20100070397 A KR 20100070397A KR 20120009765 A KR20120009765 A KR 20120009765A
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South Korea
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light emitting
phosphor layer
phosphor
metal pad
forming
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KR1020100070397A
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Korean (ko)
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KR101689395B1 (en
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오광용
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서울반도체 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Abstract

A method of manufacturing a light emitting device according to the present invention includes the steps of preparing a wafer substrate; Forming a plurality of light emitting diodes each having a metal pad thereon on the wafer substrate; Forming a phosphor layer by applying a mixture of phosphor and resin on the light emitting diode; UV curing the phosphor layer; And etching a portion of the phosphor layer, and the light emitting device manufactured as described above has excellent color reproducibility and can improve homogeneity of phosphors, thereby solving chromatic aberration problems, and reducing defective rate of the light emitting device. Reliability can be improved.

Description

LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device and a method of manufacturing the same, and more particularly, to a light emitting device to which a phosphor is coated at a wafer level and a method of manufacturing the same.

A light emitting diode (LED) refers to a device that makes a small number of carriers (electrons or holes) injected by using a pn junction structure of a semiconductor and emits a predetermined light by recombination thereof, and red using GaAsP or the like. Green light emitting diodes using light emitting diodes, GaP and the like, and blue light emitting diodes using InGaN / AlGaN double hetero structure.

The light emitting device may implement white light by combining a light emitting diode chip and a phosphor. For example, a white phosphor may be disposed on top of a light emitting diode chip emitting blue light to emit yellow green or yellow light as an excitation source, thereby obtaining white color by blue light emission of the light emitting diode chip and yellow green or yellow light emission of the phosphor. . That is, white light can be realized by a combination of a blue light emitting diode chip made of a semiconductor component emitting a wavelength of 430 to 480 nm and a phosphor capable of generating yellow light using blue light as an excitation source.

That is, in the conventional white light emitting device, light having a sufficiently high energy emitted from a high brightness blue LED excites a yellow YAG-based phosphor to emit light in a yellow region, thereby inducing white with a combination of blue and yellow of the LED. Method was used.

1 is a view showing a phosphor coating method on a conventional LED chip. Referring to FIG. 1, for example, an LED chip 10, which is a blue light emitting diode chip, is disposed on the substrate 20 on which the lead frame 30 is formed, and the housing body 50 is formed to surround the same. At this package level, for example, a mixture of phosphors and encapsulants 70 of the YAG series is doped from a syringe or dispenser 60, such that the LED chip 10 and the interior space of the housing body 50 are Fills.

However, in the conventional light emitting device formed by the method as shown in FIG. 1, a combination of blue light emitted from the LED chip 10 and yellow light emitted from the phosphor 70 is applied to the method of applying the phosphor 70 and the operation of the LED chip 10. Since it is very sensitive to the conditions, the conventional YAG-based white light emitting device has a lot of difficulties in reproducing the same white.

In particular, as shown in FIG. 1, the mixing ratio of the epoxy resin or the silicone resin used in the application of the phosphor 70, the thermal instability of such a resin, the viscosity of the encapsulant in the syringe 60, and the phosphor during curing Due to irregular deposition of light emission, the luminance is irregular, color coordinates are spread, and the defect rate of the device is high, and color reproducibility is inferior. In addition, due to the viscosity change and curing of the encapsulant, the material of the predetermined portion of the syringe 60 may not be used, and there is a problem in that the material is wasted.

Accordingly, a technical object of the present invention is to provide a light emitting device having uniform phosphor distribution characteristics, excellent color reproducibility, and improved reliability and a method of manufacturing the same.

In addition, the technical problem to be achieved by the present invention is to reduce the amount of phosphor used in the manufacturing of the light emitting device to reduce the cost, and to provide a light emitting device and a method for manufacturing the same, which is possible to mass-produce wafer units and improved production yield.

Method of manufacturing a light emitting device according to an aspect of the present invention, comprising the steps of preparing a wafer substrate;

Forming a plurality of light emitting diodes each having a metal pad thereon on the wafer substrate;

Forming a phosphor layer by applying a mixture of phosphor and resin on the plurality of light emitting diodes;

Selectively curing the phosphor layer using ultraviolet rays; And

Etching a portion of the phosphor layer.

The etching may include exposing the metal pad by removing the phosphor layer applied on the metal pad.

The manufacturing method further includes electrically connecting the exposed metal pad and a bonding wire.

The curing of the phosphor layer may include manufacturing a mask having a pattern corresponding to a region where the metal pad is formed; And disposing the mask on the wafer substrate to irradiate the ultraviolet rays.

In addition, the resin is characterized in that the photosensitive resin prepared by containing at least one of acrylic, silicone, epoxy, urethane, and imide-based materials.

In addition, the manufacturing method further includes the step of forming a roughness on the surface of the phosphor layer.

In addition, the forming of the phosphor layer may include applying a mixture of the phosphor and the resin using at least one of a spin coating method, a spray method, a dipping method, or a screen printing method.

In addition, the forming of the phosphor layer may include forming a plurality of phosphor layers at different positions of the upper portion of the light emitting diode for each region, or forming the plurality of phosphor layers at different positions of the upper layers of the light emitting diode. It is done.

A light emitting device according to another aspect of the present invention, a wafer substrate;

A plurality of light emitting diodes formed on the wafer substrate and each having a metal pad thereon; And

Comprising a phosphor layer applied on the plurality of light emitting diodes,

The phosphor layer is UV cured, and a portion thereof is etched to have a pattern that exposes the metal pad.

The exposed metal pad is also electrically connected with a bonding wire.

In addition, the phosphor layer is prepared using a mixture of phosphor and resin, wherein the resin is a photosensitive resin prepared by including at least one of acrylic, silicone, epoxy, urethane, and imide materials.

In addition, the surface of the phosphor layer includes a predetermined roughness.

In addition, the phosphor layer may include a plurality of phosphor layers, and the plurality of phosphor layers may be applied to regions on the light emitting diodes or to different positions for each layer.

The light emitting device according to the present invention can emit light of uniform color and provide excellent color reproducibility, can improve the homogeneity of phosphors, solve the chromatic aberration problem, and reduce the defective rate, thereby improving the reliability of the light emitting device. have.

In addition, the light emitting device according to the present invention can reduce the manufacturing cost by reducing the total amount of the phosphor used in the manufacturing of the light emitting device, compared to the conventional phosphor coating method, and to produce a large amount of light emitting devices by coating the phosphor at the wafer level So that productivity can be improved.

1 is a view for explaining a phosphor coating method in a conventional light emitting device.
2 shows a wafer on which a plurality of light emitting diodes are formed;
3 is a schematic cross-sectional view of a metal pad on top of a light emitting diode formed on the wafer of FIG.
4A is a view for explaining a process of applying a phosphor on a wafer on which a plurality of light emitting diodes are formed according to one embodiment of the present invention;
Figure 4b is a cross-sectional view showing a metal pad coated with a phosphor in accordance with an embodiment of the present invention.
Figure 5a is a cross-sectional view for explaining the UV exposure / curing step of the phosphor layer according to an embodiment of the present invention.
5B is a cross-sectional view showing a phosphor layer patterned according to an embodiment of the present invention.
6 is a flowchart illustrating a method of patterning a phosphor layer according to an embodiment of the present invention.
7A and 7B are schematic cross-sectional views of a plurality of light emitting diodes formed on a wafer substrate in accordance with one embodiment of the present invention.
8 is a plan view for explaining a multiple phosphor pattern formed according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments introduced below are provided as examples to sufficiently convey the spirit of the present invention to those skilled in the art. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout the specification.

2 and 3, a wafer substrate and a metal pad to which a phosphor coating method according to an embodiment of the present invention can be applied will be described.

2 illustrates a wafer substrate 500 on which a plurality of light emitting diodes are formed. In FIG. 2, the wafer substrate 500 is divided into a plurality of regions by lines representing dicing lines to be used later to separate the plurality of light emitting diodes 1000 formed thereon into individual LED chips. It is shown that one light emitting diode 1000 is formed in one region.

Referring to FIG. 2, metal pads 300 and 400 used to apply power to the light emitting diode 1000 may be formed on an upper surface of one light emitting diode 1000. The metal pads 300 and 400 may be in contact with a P-type semiconductor layer or an N-type semiconductor layer (see FIG. 7), respectively, to apply power. A detailed structure of the metal pads 300 and 400 will be described later.

In addition, the wafer substrate 500 may be any substrate capable of mounting the LED chip at a high density, and is not limited thereto. For example, sapphire, ceramic, SiC, alumina, quartz ), Calcium zirconate, forsterite, graphite, fusedsilica, mullite, cordierite, zirconia, beryllia, and aluminum nitride ( aluminum substrate (LTN), low temperature co-fired ceramic (LTCC), or the like.

On the other hand, Figure 3 is a cross-sectional view showing a metal pad according to an embodiment of the present invention. Referring to FIG. 3, the metal pads 300 and 400 may include primary metal pads 310 and 410 and secondary metal pads 320 and 420 further formed thereon.

3A schematically illustrates an example in which secondary pads are formed as solder balls 320 and 420 on the primary metal pads 310 and 410, and FIG. 3B is a primary view. The second pad is schematically illustrated by applying a deposition method using an electron beam (e-beam) or a sputtering apparatus on the metal pads 310 and 410.

However, the secondary metal pads 320 and 420 may be manufactured using other known metal pad forming methods in addition to the above-described method, and may be manufactured by exposing and developing the photosensitive material, for example. The present invention is not limited to the specific metal pad formation method.

In some embodiments, only the primary metal pads 310 and 410 may be formed on the light emitting diodes. Thus, the scope of the present invention should not be construed as limited to the specific embodiments including primary metal pads 310 and 410 and secondary metal pads 320 and 420.

However, the following embodiments will be described by taking an example in which the secondary metal pads 320 and 420 are formed on the primary metal pads 310 and 410.

In FIG. 3, for the sake of simplicity, a detailed structure (see FIG. 7) of the semiconductor stacked structure formed on the wafer substrate 500 is omitted, and only the wafer substrate 500 and the metal pads 300 and 400 are omitted. Highlighted.

Hereinafter, a phosphor coating method according to an embodiment of the present invention will be described with reference to FIGS. 4 and 5.

4A is a view for explaining a process of applying a phosphor on a wafer substrate on which a plurality of light emitting diodes are formed according to an embodiment of the present invention, and FIG. 4B is a cross-sectional view illustrating a metal pad coated with phosphors.

In FIG. 4A, a process of dotting the mixture 700 of the phosphor and the photosensitive resin 700 using the syringe 600 is illustrated on the wafer substrate 500.

Here, the kind of the phosphor is not particularly limited, and all known phosphors for wavelength conversion may be used, but are not limited thereto. For example, (Ba, Sr, Ca) 2 SiO 4 : Eu 2+ , YAG ( (Y, Gd) 3 (Al , Ga) 5 O 12: Ce 3 +) based phosphor, TAG ((Tb, Gd) 3 (Al, Ga) 5 O 12: Ce 3+) based phosphor, (Ba, Sr , Ca) 3 SiO 5: Eu 2 +, (Ba, Sr, Ca) MgSi 2 O 6: Eu 2 +, Mn 2 +, (Ba, Sr, Ca) 3 MgSi 2 O 8: Eu 2 +, Mn 2 + and (Ba, Sr, Ca) MgSiO 4: it may be mentioned at least one member selected from the group consisting of Eu 2 +, Mn 2 +.

In addition, the material of the photosensitive resin includes acrylic, silicone, epoxy, urethane, and imide, and both negative / positive photosensitive resin materials can be used.

The mixed phosphor and the photosensitive resin material 700 are doped a predetermined amount onto the wafer substrate 500 on which a plurality of light emitting diodes are formed, from the inside of the syringe or dispenser 600 through the outlet thereof, and then the rotation of the wafer. Due to the centrifugal force, the phosphor layer 750 may be evenly spread over the light emitting diode (or the wafer substrate) to form the phosphor layer 750. Here, when doping the phosphor and the photosensitive resin material mixture 700 on the wafer according to an embodiment of the present invention, compared to the case of doping the phosphor and resin mixture for each chip unit, a plurality of chips on the wafer Since many phosphors and resin mixtures are doted at once, the curing of the resin or encapsulant is reduced, and the problem of waste of the phosphors and resin mixture can be solved.

However, the method of applying the mixture 700 of the phosphor and the photosensitive resin on the wafer substrate 500 is not limited to the above-described "spin coating method", for example, spraying, dipping or screen printing. Other known coating methods such as a method may be used. As a result, the phosphor may be applied to the light emitting diode upper part 1000 of the wafer substrate 500 in the form of a thin film having a constant thickness. 4B shows that the phosphor layer 750 formed as described above can have various thicknesses.

Specifically, referring to (a) or (b) of FIG. 4B, based on the height of the upper surfaces of the secondary metal pads 320 and 420, the phosphor layer 750 may be formed more than the secondary metal pads 320 and 420. Lower height (see line A-A '), secondary metal pads 320 and 420 and phosphor layer 750 are the same height (see line B-B'), or secondary metal pad 320 It can be seen that the height of the phosphor layer 750 may be higher than that of 420 (see A-A 'line). For example, in the case of the spin coating method, the phosphors may vary depending on the amount of the phosphors and the photosensitive resin mixture 700 doped on the wafer substrate 500, the type of the phosphors, the target color coordinates, the spin rotational force, the spin rotational speed, and the like. It is meant that the thickness of layer 750 can vary.

In addition, if the thickness of the phosphor layer 750 is too thick, since the light intensity (cd) may drop because the light may be emitted from the finished light emitting diode chip to the side portion instead of the front portion of the phosphor layer 750, the phosphor layer In forming 750, it is necessary to control factors that may affect the thickness.

4B illustrates an example in which the secondary metal pads 320 and 420 are additionally formed on the primary metal pads 310 and 410. Only the primary metal pads 310 and 410 may be formed, and in this case, the height of the phosphor layer 750 may be lower, higher, or the same as the height of the upper surface of the primary metal pads 310 and 410. Can be assumed

Phosphor layer 750 is secondary metal pads 320 and 420 (if only primary metal pads are formed, primary metal pads 310 and 410; hereafter referred to as " metal pads 300 and 400 ") In the case where the metal pads 300 and 400 are buried by the phosphor layer 750 (that is, the upper surface of the phosphor layer 750 is located at the line C-C 'in FIG. 4B). In this case, in order to electrically connect the metal pads 300 and 400 to the bonding wire (not shown), a part of removing the phosphor layer 750 applied to the upper surfaces of the metal pads 300 and 400 (eg, For example, polishing is required. However, polishing and removing the cured phosphor layer 750 is not easy, and it may be difficult to remove completely, and may be a very slow operation. On the other hand, unlike the prior art, according to one embodiment of the present invention, the removal of the phosphor coding 750 formed on the upper surface of the metal pad (300, 400) to the patterning of the phosphor layer 750 can be made easily. have. It will be described in detail below.

FIG. 5A is a view for explaining a step of UV exposure / curing the phosphor layer 750 as part of a process for patterning the phosphor layer 750 according to an embodiment of the present invention, and FIG. Section showing the phosphor coating.

Referring to FIG. 5A, a step of UV exposing the wafer substrate 500 on which the phosphor layer 750 is formed is illustrated. Specifically, for example, the wafer substrate 500 on which the phosphor layer 750 is formed by the spin coating method as shown in FIG. 4A is disposed on the wafer support 850, and then a mask (or mask) is placed on the wafer substrate 500. 800 is positioned and irradiated with UV to cure the phosphor layer 750 formed in a region other than the position where the metal pads 300 and 400 are formed (region “A” in FIG. 5).

Here, the mask 800 may include a quartz substrate 810 and a chrome pattern 820 formed thereon. The chrome pattern 820 may be formed at a position corresponding to the area “A”. Accordingly, the phosphor layer 750 disposed under the mask 800 and formed at a position corresponding to the region “A” remains uncured, unlike other regions, even when irradiated with UV, and thus, is not subjected to the subsequent etching process. Can be easily removed.

That is, although not shown, the phosphor layer 750 located in the region "A" is removed from the top of the metal pads 300 and 400 through the method of dry to wet etching (that is, the phosphor layer 750 is patterned). ), The metal pads 300 and 400 may be exposed.

Meanwhile, the mask 800 illustrated in FIG. 5A illustrates a case in which the phosphor layer 750 is a negative photosensitive resin material. For example, the present invention is not limited thereto, and the phosphor layer 750 is a positive photosensitive resin. In the case of the material, the chrome pattern 820 may be formed in an area except for the area “A”.

Referring to FIG. 5B, when the height of the phosphor layer 750 is lower than the top height of the metal pads 300 and 400, such as A-A ′ in FIG. 4B, the patterned phosphor layer 750 may be formed in FIG. 5B. If the height of the phosphor layer 750 is the same as the top height of the metal pad (300, 400), as shown in B-B 'of Figure 4b, the patterned phosphor layer ( 750 may be formed as shown in FIG. 5B, and when the height of the phosphor layer 750 is higher than the top heights of the metal pads 300 and 400, as illustrated in C-C ′ of FIG. 4B, the pattern may be formed. The phosphor layer 750 may be formed as shown in (c) of FIG. 5B.

However, when the upper surface of the phosphor layer 750 in the state in which the coating process as shown in FIG. 4A is completed is lower than or equal to the upper surface height of the metal pads 300 and 400, as shown by the line AA ′ of FIG. 4B, In most cases, the phosphor layer 750 does not exist on the upper side of the metal pads 300 and 400. If remaining, since it may interfere with the electrical contact between the metal pad (300, 400) and the bonding wire in the future, according to an embodiment of the present invention of the phosphor and the photosensitive resin remaining on the metal pad (300, 400) A process of substantially completely removing the mixture 700 to the phosphor layer 750 may be required, in which case the shape of the phosphor layer 750 in the steps after the UV irradiation / curing process and the etching process, respectively, is shown in FIG. 5B. It should be understood that it means the same as (a) and (b). All.

Thus, as can be seen in FIG. 5B, through the above-described UV exposure / etching process (ie, patterning of the phosphor layer 750), regardless of the height of the metal pads 300, 400 or the phosphor layer 750. In addition, it is possible to completely expose the metal pads 300 and 400 to the outside of the phosphor layer 750, and by connecting the exposed metal pads 300 and 400 to the bonding wires, workability is improved and defect rates are reduced. Can be.

In addition, according to an embodiment, even when the overall height of the metal pads 300 and 400 is lower than the top height of the phosphor layer 750, the electrical connection between the metal pads 300 and 400 and the bonding wires is in accordance with the present invention. As it becomes possible, it is possible to eliminate the need to form additional metal pads to increase the height of the entire metal pads on the primary metal pads 310 and 410 in order to connect with the bonding wires.

6 is a flowchart illustrating a method of patterning a phosphor layer according to an embodiment of the present invention.

First, in step S610, the wafer substrate 500 is prepared, and a plurality of light emitting diodes 1000 are formed thereon.

In this regard, as described above, the wafer substrate 500 may be any substrate capable of mounting the LED chip at a high density, and the present invention is not limited to the specific wafer substrate type. ) May be a horizontal light emitting diode as shown in FIG. 7A, or may be a vertical light emitting diode as shown in FIG. 7B. That is, the type of light emitting diode that can be formed on the wafer substrate 500 is not limited.

Next, in step S620, metal pads 300 and 400 are formed on the respective light emitting diodes 1000. In this case, as described above, only the primary metal pads 310 and 410 directly contacting the N-type or P-type semiconductor layers (see 210 and 250 of FIG. 7A) may be formed on the light emitting diode 1000. It is also possible to form additional secondary metal pads 320 and 420 thereon.

Next, in step S630, a mixture 700 of a phosphor and a resin is coated on the light emitting diodes 1000 on which the metal pads 300 and 400 are formed, that is, on the wafer substrate 500. In this case, as a coating method of a fluorescent substance, well-known coating methods, such as a spin coating method, a spray method, a dipping method, and the screen printing method, can be applied.

Next, in step S640, the applied phosphor layer 750 is UV exposed / cured using the mask 80. In this case, the pattern 820 of the mask 80 may be formed at a position corresponding to the metal pads 300 and 400. As a result, the phosphor layer 750 of the upper region (region “A”) of the metal pads 300 and 400 formed at the position corresponding to the pattern 820 is not cured in spite of UV irradiation. It can be easily removed by

That is, compared to the prior art in which the fully cured phosphor layer is flattened by a polishing process or the like, according to the present invention, since the phosphor layer formed in the region "A" is not cured, the metal pads 300 and 400 are more easily and completely. Can be removed from the top.

Next, in step S650, as described above, the phosphor layer 750 formed in the region "A" is removed by dry or wet etching.

In this case, in the case of the wet etching process, the chemicals used in the etching process may be dried and removed through a subsequent baking process. In the case of dry etching, a known etching method such as ion beam etching (IBE), sputtering, reactive ion etching (RIE), or the like can be used.

By doing so, the metal patterns 300 and 400 (in the case of the C-C 'line in FIG. 4B) that are embedded in the phosphor layer 750 are exposed, or the phosphor layers 750 on the metal patterns 300 and 400. ) If a part remains (in the case of A-A 'line or B-B' line of Figure 4b) by removing it to completely expose the surface of the metal pattern (300, 400), bonding with the metal pattern (300, 400) The connection work of a wire can be made easy.

In addition, although not shown, the method of patterning a phosphor layer according to an embodiment of the present invention is performed by etching or surface treatment by a plasma process on the upper portion of the phosphor layer 750 or by compressed air by sand blasting. The method may further include forming a roughness on the surface of the phosphor layer 750 by spraying sand. By doing so, light generated in the active layer (eg, 230 of FIG. 7A) of the light emitting diode 1000 may be emitted to the outside by being diffusely reflected by the phosphor layer 750 during operation, so that the light emitting efficiency of the light emitting diode Is increased.

Next, in step S650, a plurality of light emitting diodes 1000 formed on the wafer substrate 500 are cut or diced, for example, at a dotted line in FIG. It can manufacture.

As described above, according to an embodiment of the present invention, the LED chip 1000 and the phosphor layer 750 may be variously selected to implement a desired color. For example, in order to implement white light emission, a blue light emitting diode chip emitting a wavelength of 430 to 480 nm may be mounted, and a yellow light emitting phosphor may be coated on the light emitting diode chip. At this time, blue light is emitted from the light emitting diode chip, and the blue light is directly incident on the yellow light emitting phosphor layer, and a part of the incident light is wavelength-converted to yellow light. Accordingly, blue light, which is part of the primary light emission, and yellow light wavelength-converted by the phosphor layer 750 may be mixed to implement white color. In this case, the degree of light conversion or the color coordinate can be adjusted by adjusting the concentration and distribution of the phosphor in the phosphor layer 750 and the thickness of the phosphor layer 750.

Alternatively, in order to emit white light, a UV light emitting diode chip emitting a wavelength of 350 nm to 410 nm is mounted, and a phosphor layer manufactured by including red, blue, and green light emitting phosphors is formed on the light emitting diode chip. You may. In other words, in the step of manufacturing the mixture 700 of the phosphor and the photosensitive resin, a plurality of phosphors of different types may be manufactured instead of a single phosphor. In this case, however, as various kinds of phosphors are mixed with the resin and coated on the upper surface of the LED chip, the phosphors have different densities for each kind, causing uneven deposition in the resin, and light emission interference between the phosphors occurs. There may be a problem of low light efficiency.

Therefore, according to another embodiment of the present invention, as shown in Figure 8, by coating a plurality of different phosphors on the light emitting diode by different layers for each phosphor, this problem of the prior art can be solved.

That is, referring to FIG. 8, the region of the light emitting diode is formed by changing the region in the form of the first phosphor 710, the second phosphor 720, and the third phosphor 730. It may be formed on the chip. To this end, by repeating the above-described UV exposure and etching operations a plurality of times, for example, a phosphor layer composed of a total of three phosphor layers can be applied to the upper portion of the light emitting diode.

Alternatively, although not shown, a plurality of phosphor layers may be formed by layering the individual phosphor layers sequentially including blue light emitting phosphors, green light emitting phosphors, and red light emitting phosphors, respectively, on the light emitting diode chip. have. Also in this case, by repeating the above-described UV exposure and etching operations a plurality of times, for example, a phosphor layer composed of a total of three phosphor layers can be formed layer by layer on the light emitting diode.

According to another embodiment of the present invention, when forming a plurality of phosphor layers on the light emitting diode chip by region or layer, compared with the case where a plurality of phosphors are mixed with a resin at the same time and then applied to the top of the light emitting diode In addition, the luminous interference between the respective phosphors is suppressed to increase the light efficiency.

The light emitting device of the present invention and a method of manufacturing the same are not limited to the above-described embodiment, but may be applied to a light emitting device having various structures including a phosphor layer.

The present invention can be carried out by modification and modification within the scope without departing from the gist of the present invention, the scope of the present invention is defined by the claims to be described later rather than the detailed description, the meaning and scope of the claims and their All changes or modifications derived from the equivalent concept should be construed as being included in the scope of the present invention.

300, 400: metal pad 500: wafer substrate
600: syringe 700: phosphor and resin mixture
750: phosphor layer 800: mask
1000: light emitting diode

Claims (13)

Preparing a wafer substrate;
Forming a plurality of light emitting diodes each having a metal pad thereon on the wafer substrate;
Forming a phosphor layer by applying a mixture of phosphor and resin on the plurality of light emitting diodes;
Selectively curing the phosphor layer using ultraviolet rays; And
Etching a portion of the phosphor layer. The method of claim 1, wherein the etching comprises removing the phosphor layer applied on the metal pad to expose the metal pad. The method of claim 2, further comprising electrically connecting the exposed metal pad and the bonding wire. The method of claim 1, wherein the step of selectively curing the phosphor layer,
Preparing a mask having a pattern corresponding to a region where the metal pad is formed; And
And disposing the mask on top of the wafer substrate and irradiating the ultraviolet rays. The method of manufacturing a light emitting device according to claim 1, wherein the resin is a photosensitive resin prepared by containing at least one of acrylic, silicone, epoxy, urethane, and imide materials. The method of claim 1, further comprising forming a roughness on the surface of the phosphor layer. The method of claim 1, wherein the forming of the phosphor layer includes applying a mixture of the phosphor and the resin using at least one of a spin coating method, a spray method, a dipping method, or a screen printing method. The manufacturing method of the light emitting element made into. The method of claim 1, wherein the forming of the phosphor layer comprises forming a plurality of phosphor layers at different positions on the upper portion of the light emitting diode, or forming the plurality of phosphor layers at different positions on the upper layer of the light emitting diode. The manufacturing method of the light emitting element characterized by the above-mentioned. Wafer substrates;
A plurality of light emitting diodes formed on the wafer substrate and each having a metal pad thereon; And
Comprising a phosphor layer applied on the plurality of light emitting diodes,
Wherein said phosphor layer has a pattern that is UV cured and a portion thereof is etched to expose the metal pad. The light emitting device of claim 9, wherein the exposed metal pad is electrically connected to a bonding wire. The method of claim 9, wherein the phosphor layer is prepared using a mixture of phosphor and resin, wherein the resin is a photosensitive resin prepared by including at least one of acrylic, silicone, epoxy, urethane, and imide materials. Light emitting element. The light emitting device according to claim 9, wherein the surface of the phosphor layer has a predetermined roughness. The light emitting device according to claim 9, wherein the phosphor layer includes a plurality of phosphor layers, and the plurality of phosphor layers are applied to regions on the light emitting diodes or to different positions for each layer.
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JP2005311395A (en) * 2005-07-14 2005-11-04 Matsushita Electric Ind Co Ltd Manufacturing method of semiconductor light-emitting device
JP2009512178A (en) * 2005-11-04 2009-03-19 パナソニック株式会社 LIGHT EMITTING MODULE AND DISPLAY DEVICE AND LIGHTING DEVICE USING THE SAME
KR20100019330A (en) * 2009-03-16 2010-02-18 이익주 Manufacturing method of light emitting diode

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JP2005311395A (en) * 2005-07-14 2005-11-04 Matsushita Electric Ind Co Ltd Manufacturing method of semiconductor light-emitting device
JP2009512178A (en) * 2005-11-04 2009-03-19 パナソニック株式会社 LIGHT EMITTING MODULE AND DISPLAY DEVICE AND LIGHTING DEVICE USING THE SAME
KR20100019330A (en) * 2009-03-16 2010-02-18 이익주 Manufacturing method of light emitting diode

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KR20170011208A (en) * 2015-07-22 2017-02-02 동우 화인켐 주식회사 Color filter, method for producing the same and image display device employing color filter

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