KR20110138755A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR20110138755A
KR20110138755A KR1020100058831A KR20100058831A KR20110138755A KR 20110138755 A KR20110138755 A KR 20110138755A KR 1020100058831 A KR1020100058831 A KR 1020100058831A KR 20100058831 A KR20100058831 A KR 20100058831A KR 20110138755 A KR20110138755 A KR 20110138755A
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KR
South Korea
Prior art keywords
layer
light emitting
light
emitting device
ohmic
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KR1020100058831A
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Korean (ko)
Inventor
김선경
최운경
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엘지이노텍 주식회사
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Priority to KR1020100058831A priority Critical patent/KR20110138755A/en
Publication of KR20110138755A publication Critical patent/KR20110138755A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: A light emitting device is provided to reflect light by a distributed bragg reflector, thereby increasing light extraction efficiency of a light emitting device. CONSTITUTION: A junction layer(150) is formed on a conductive supporting member(160). A reflecting layer(140) is formed on the junction layer. A plurality of multilayer mirrors(130) is formed on the reflecting layer. An ohmic layer(120) is formed on the multilayer mirrors and the reflecting layer. A light emitting structure(110) generates light on the ohmic layer. An electrode(170) is formed on the light emitting structure.

Description

[0001] LIGHT EMITTING DEVICE [0002]

An embodiment relates to a light emitting device.

A light emitting device (LED) may be generated by combining elements of group III and group V on a periodic table of a p-n junction diode in which electrical energy is converted into light energy. LED can realize various colors by adjusting the composition ratio and the material of the compound semiconductor.

When the forward voltage is applied, the n-layer electrons and the p-layer holes combine to generate light energy corresponding to the energy gap of the conduction band and the valence band.

In particular, blue LEDs, green LEDs, and ultraviolet (UV) LEDs using nitride semiconductors are commercially used and widely used.

The embodiment provides a light emitting device, a light emitting device manufacturing method and a light emitting device package having a new structure.

The embodiment provides a light emitting device having improved light extraction efficiency and a method of manufacturing the same.

The light emitting device according to the embodiment includes a reflection layer; A plurality of multiple thin film mirrors formed on the reflective layer and having a multilayer structure in which a first layer having a first refractive index and a second layer having a second refractive index different from the first refractive index are alternately stacked; An ohmic layer formed on the plurality of multiple thin film mirrors and the reflective layer; And a light emitting structure formed on the ohmic layer, the light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer to generate light.

The reflective layer extends between the plurality of thin film mirrors to contact the ohmic layer, wherein the thicknesses of the first and second layers of the plurality of thin film mirrors are each λ / 4 nm, wherein λ is the active layer. Is the wavelength of light emitted from, wherein n is the refractive index of the first layer or the second layer, m is a natural number,

The first layer of the multiple thin-film mirror includes at least one of SiO 2 , MgF 2 , The second layer comprises at least one of TiO 2 , Si 3 N 4 , ZrO 2 , TaBO 3 ,

The thickness of the ohmic layer is λ / 4rm, where r is the refractive index of the ohmic layer and m contains a natural number.

The embodiment can provide a light emitting device having a new structure, a light emitting device manufacturing method, and a light emitting device package.

The embodiment can provide a light emitting device capable of improving light extraction efficiency and a method of manufacturing the same.

1 is a side cross-sectional view of a light emitting device according to an embodiment
FIG. 2 is a cross-sectional view taken along line BB ′ of the light emitting device of FIG. 1; FIG.
3 is an enlarged view of region A of FIG. 1;
4 to 11 illustrate a method of manufacturing a light emitting device according to the embodiment.
12 is a side sectional view showing a light emitting device according to another embodiment;
13 is a side cross-sectional view of a light emitting device package including a light emitting device according to the embodiment;
14 and 15 show light units using light emitting elements according to the embodiment;

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not entirely reflect the actual size.

Hereinafter, light emitting devices according to embodiments will be described in detail with reference to the accompanying drawings.

1 is a side cross-sectional view of a light emitting device 100 according to an embodiment, FIG. 2 is a cross-sectional view taken along line BB ′ of the light emitting device 100 of FIG. 1, and FIG. 3 is an enlarged view of region A of FIG. 1.

1 to 3, the light emitting device 100 according to the embodiment includes a conductive support member 160, a bonding layer 150 on the conductive support member 160, and a bonding layer 150. A reflective layer 140, a plurality of multiple thin film mirrors 130 formed on the reflective layer 140, a plurality of multiple thin film mirrors 130 and an ohmic layer 120 formed on the reflective layer 140, A light emitting structure 110 formed on the ohmic layer 120 and including a first conductive semiconductor layer 112, an active layer 114, and a second conductive semiconductor layer 116 to generate light; It may include an electrode 170 formed on the light emitting structure (110).

The first conductive semiconductor layer 112, the active layer 114, and the second conductive semiconductor layer 116 form a light emitting structure 110 that generates light by a recombination process of holes and electrons. .

The conductive support member 160 may support the light emitting structure 110 and provide power to the light emitting structure 110 together with the electrode 170. The conductive support member 160 may include, for example, copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten (Cu-W), carrier wafers (eg, Si, Ge, GaAs, ZnO, Sic, etc.) may be included.

The bonding layer 150 may be formed on the conductive support member 160. The bonding layer 150 may be formed to improve the interface bonding force between the conductive support member 160 and the reflective layer 140.

The bonding layer 150 is formed of a single layer or a multilayer structure including at least one of a metal material having good adhesion, for example, Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, or Ta. Can be. However, when the conductive support member 160 is formed by a plating or deposition method instead of a bonding method, the bonding layer 150 may not be formed.

The reflective layer 140 may be formed on the bonding layer 150. The reflective layer 140 may improve light emission efficiency of the light emitting device 100 by reflecting light incident from the light emitting structure 110.

The plurality of multiple thin film mirrors 130 are formed on the reflective layer 140. Accordingly, the upper surface of the reflective layer 140 includes a plurality of grooves corresponding to the shapes of the plurality of multiple thin film mirrors 130. can do. That is, the reflective layer 140 may be formed to extend between the plurality of multiple thin film mirrors 130 to contact the ohmic layer 120.

The reflective layer 140 is a material having a high reflectance, for example, a metal or an alloy including at least one of silver (Ag), aluminum (Al), palladium (Pd), copper (Cu), and platinum (Pt). Can be formed. In addition, the reflective layer 140 may be formed of a material having electrical conductivity, and may transfer power provided from the conductive support member 160 to the light emitting structure 110.

The plurality of multiple thin film mirrors 130 may be formed on the reflective layer 140. Each of the plurality of multiple thin film mirrors 130 may be spaced apart from each other, and the reflective layer 140 may be formed between the plurality of multiple thin film mirrors 130.

As shown in FIG. 3, the multilayer thin film mirror 130 alternately includes, for example, a first layer 131 having a first refractive index and a second layer 132 having a second refractive index different from the first refractive index. It can have a laminated multilayer structure.

In addition, the thicknesses of the first layer 131 and the second layer 132 are respectively λ / 4 nm (where λ is a wavelength of light emitted from the active layer 114 and n is the first layer 131). ) Or the refractive index of the second layer 132, and m is a natural number.

In this case, the multiple thin film mirror 130 may act as a distributed Bragg reflector (DBR), and thus the light incident toward the multiple thin film mirror 130 is effectively reflected to extract light to the outside. The amount of may increase.

The first layer 131 is formed to include at least one of, for example, SiO 2 and MgF 2 , which are materials having a relatively low refractive index, and the second layer 132 is, for example, a relatively high refractive index. It may be formed to include at least one of a material having a TiO 2 , Si 3 N 4 , ZrO 2 , TaBO 3 , but is not limited thereto.

The ohmic layer 120 may be formed on the reflective layer 140 and the plurality of multiple thin film mirrors 130. The ohmic layer 120 may form an ohmic contact with the second conductivity-type semiconductor layer 116, thereby transferring power to the light emitting structure 110.

The ohmic layer 120 may selectively use a translucent conductive layer and a metal, and may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAO), and IGZO. using at least one of indium gallium zinc oxide (IGTO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, Ni, Ag, or Au It can be implemented in a single layer or multiple layers. The ohmic layer 120 is preferably formed of a light-transmissive material so that the reflective layer 140 can effectively reflect light, so when the ohmic layer 120 includes a metal layer, the metal layer is formed of a thin film. Can be.

The thickness of the ohmic layer 120 may be preferably λ / 4 nm, where λ is a wavelength of light emitted from the active layer 114, n is a refractive index of the ohmic layer 120, and m May be a natural number. When the ohmic layer 120 has such a thickness, the ohmic layer 120 forms a distributed Bragg reflector together with the plurality of multiple thin film mirrors 130 to reflect the light of the light emitting device 100 according to the embodiment. It can contribute to the improvement of light extraction efficiency.

The light emitting structure 110 may be formed on the ohmic layer 120. The light emitting structure 110 may include a plurality of compound semiconductor layers. For example, the active layer 114 may be formed on the second conductive semiconductor layer 116 and the second conductive semiconductor layer 116. The first conductive semiconductor layer 112 may be included on the active layer 114.

The second conductivity-type semiconductor layer 116 may be implemented, for example, as a p-type semiconductor layer, wherein the p-type semiconductor layer is In x Al y Ga 1 -x- y N (0≤x≤1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1), for example, may be selected from InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN, etc., Mg, Zn, Ca, Sr, P-type dopants such as Ba may be doped.

The active layer 114 is, for example, include a semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) And a single quantum well structure, a multi quantum well structure (MQW: Multi Quantum Well), a quantum dot structure, or a quantum line structure.

The active layer 114 may generate light by energy generated during recombination of electrons and holes provided from the first conductive semiconductor layer 112 and the second conductive semiconductor layer 116. have.

The first conductivity-type semiconductor layer 112 may include, for example, an n-type semiconductor layer, wherein the n-type semiconductor layer is In x Al y Ga 1 -x- y N (0 ≦ x ≦ 1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1), for example, may be selected from InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN, etc., n such as Si, Ge, Sn Type dopants may be doped.

The light extraction pattern 111 may be formed on an upper surface of the first conductive semiconductor layer 112. The light extraction pattern 111 may have a random roughness shape or a regular pattern.

For example, the light extraction pattern 111 may have a photonic crystal structure that selectively transmits or reflects light of a specific wavelength band, and may have a period of 50 nm to 3000 nm, but is not limited thereto. .

Meanwhile, an N-type semiconductor layer may be included under the second conductive semiconductor layer 116. In addition, the first conductivity type semiconductor layer 112 may be a P type semiconductor layer, and the second conductivity type semiconductor layer 116 may be implemented as an N type semiconductor layer. Accordingly, the light emitting structure 110 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure, but is not limited thereto.

The electrode 170 may be formed on the first conductivity type semiconductor layer 112. The electrode 170 may be formed of, for example, a single layer or a multilayer structure including at least one of Al, Ag, Pt, Pd, Au, Ti, Cu, Ni, and Cr, but is not limited thereto.

Hereinafter, a method of manufacturing the light emitting device 100 according to the embodiment will be described.

4 to 11 illustrate a method of manufacturing the light emitting device 100 according to the embodiment. However, the description overlapping with the above description will be omitted or briefly described.

Referring to FIG. 4, the light emitting structure 110 is formed by sequentially growing the first conductive semiconductor layer 112, the active layer 114, and the second conductive semiconductor layer 116 on a substrate 105. Can be formed.

The substrate 105 may be formed of at least one of, for example, sapphire (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, or Ge, but is not limited thereto.

An upper surface of the substrate 105 may be formed to be inclined or a pattern may be formed to smoothly grow the light emitting structure 110 and to improve light extraction efficiency of the light emitting device 100.

The light emitting structure 110 may include metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma chemical vapor deposition (PECVD), and molecular beam growth (MBE). Molecular Beam Epitaxy), Hydride Vapor Phase Epitaxy (HVPE), and the like, but are not limited thereto.

Referring to FIG. 5, the ohmic layer 120 may be formed on the second conductive semiconductor layer 116. The ohmic layer 120 may selectively use a light transmissive conductive layer and a metal, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), and indium aluminum zinc (AZO). oxide), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, Ni, Ag, or Au One or more may be used to implement a single layer or multiple layers.

The ohmic layer 120 may be formed by, for example, at least one deposition method among plasma enhanced chemical vapor deposition (PECVD), electron beam (E-beam) deposition, and sputtering, or may be formed by a plating method. It does not limit to this.

Referring to FIG. 6, a multiple thin film mirror layer 130a may be formed on the ohmic layer 120. For example, the multilayer thin film mirror layer 130a may have a multilayer structure in which a first layer having a first refractive index and a second layer having a second refractive index different from the first refractive index are alternately stacked.

The thickness of the first layer and the second layer is respectively λ / 4 nm (where λ is the wavelength of light emitted from the active layer 114, n is the refractive index of the first layer or the second layer, m Is a natural number).

The first layer is, for example, relatively is formed to include at least one material is of SiO 2, MgF 2 having a low index of refraction, the second layer is, for example, the material is relatively high which has a refractive index TiO 2 It may be formed to include at least one of, Si 3 N 4 , ZrO 2 , TaBO 3 , but is not limited thereto.

The multilayer thin film mirror layer 130a may be formed by, for example, at least one deposition method among plasma enhanced chemical vapor deposition (PECVD), electron beam (E-beam) deposition, and sputtering, but is not limited thereto. .

6 and 7, the multiple thin film mirror 130 may be selectively removed to form the plurality of multiple thin film mirrors 130. Thus, each of the plurality of multiple thin film mirrors 130 may be formed spaced apart from each other.

For example, the plurality of multiple thin film mirrors 130 may be formed by forming a pattern mask (not shown) on the multiple thin film mirror layer 130a and performing an etching process along the pattern mask (not shown). But it is not limited thereto.

Referring to FIG. 8, the reflective layer 140 may be formed on the ohmic layer 120 and the plurality of multiple thin film mirrors 130. That is, the reflective layer 140 may be formed between the plurality of multiple thin film mirrors 130 to be in electrical contact with the ohmic layer 120. The reflective layer 140 may be formed by a deposition or plating method.

Referring to FIG. 9, the bonding layer 150 and the conductive support member 160 may be formed on the reflective layer 140.

The conductive support member 160 may be prepared as a separate sheet and bonded on the bonding layer 150. That is, the bonding layer 150 is disposed between the reflective layer 140 and the conductive support member 160 to improve the interfacial bonding force between the two layers, while power is supplied from the conductive support member 160 to the reflective layer ( 140).

However, when the conductive support member 160 is formed by a plating or deposition method other than the above-described bonding method, the bonding layer 150 may not be formed.

Referring to FIG. 10, the substrate 105 may be removed.

The substrate 105 may be removed by at least one of laser lift off (LLO), chemical lift off (CLO), or physical polishing. As the substrate 105 is removed, the bottom surface of the first conductive semiconductor layer 112 is exposed.

Referring to FIG. 11, the light emitting device 100 according to the exemplary embodiment may be provided by forming the electrode 170 on the exposed lower surface of the first conductive semiconductor layer 112.

In addition, the light extraction pattern 111 may be formed on the exposed lower surface of the first conductivity-type semiconductor layer 112. The light extraction pattern 111 may be formed to have a random shape by wet etching, or may be formed to have a regular pattern by a patterning process, but is not limited thereto.

12 is a side sectional view showing a light emitting device 100B according to another embodiment.

Referring to FIG. 12, the light emitting device 100B includes a conductive support member 160, a bonding layer 150 on the conductive support member 160, and a reflective layer 140 on the bonding layer 150. And a plurality of multiple thin film mirrors 130 formed on the reflective layer 140, the plurality of multiple thin film mirrors 130 and the ohmic layer 120 formed on the reflective layer 140, and the ohmic layer 120. The light emitting structure 110 is formed on the light emitting structure 110 to generate light, including the first conductive semiconductor layer 112, the active layer 114 and the second conductive semiconductor layer 116, and the light emitting structure 110 The passivation layer 180 may be formed on the electrode 170 formed on the side surface of the light emitting structure 110.

In addition, the light emitting structure 110 may be formed such that the side surface is inclined, and an upper surface of some of the plurality of multiple thin film mirrors 130 may be exposed to the outside of the light emitting structure 110.

The passivation layer 180 may prevent the light emitting structure 110 from being electrically shorted to an external electrode. For example, SiO 2 , SiO x , SiO x N y , Si 3 N 4 , to be formed of Al 2 O 3 But it is not limited thereto.

One end of the passivation layer 180 may be disposed on an upper surface of the light emitting structure 110, and an upper end of the passivation layer 180 may be disposed on an upper surface of the plurality of multiple thin film mirrors 130 exposed on the other end of the passivation structure 110. have.

The light emitting structure 110 may be formed to have an inclined side surface. The inclined may be formed in the process of isolating the light emitting structure 110 to divide the plurality of light emitting devices into individual light emitting device units. have.

Specifically, the isolation etching is performed by a dry etching method such as an inductively coupled plasma (ICP) or a wet etching method using an etching solution, which is not etched exactly perpendicular to the bottom surface. , To be inclined with respect to the bottom surface.

13 is a side cross-sectional view of a light emitting device package including a light emitting device 100 according to the embodiment.

Referring to FIG. 13, the light emitting device package according to the embodiment is provided in the body 10, the first electrode 31 and the second electrode 32 installed in the body 10, and the body 10. The light emitting device 100 according to the embodiment electrically connected to the first electrode 31 and the second electrode 32, and a molding member 40 surrounding the light emitting device 100.

The body 10 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first electrode 31 and the second electrode 32 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first electrode 31 and the second electrode 32 may increase the light efficiency by reflecting the light generated from the light emitting device 100, the external heat generated from the light emitting device 100 May also act as a drain.

The light emitting device 100 may be installed on the body 10 or on the first electrode 31 or the second electrode 32.

The light emitting device 100 may be electrically connected to the first electrode 31 and the second electrode 32 by any one of a wire method, a flip chip method, or a die bonding method.

The molding member 40 may surround and protect the light emitting device 100. In addition, the molding member 40 may include a phosphor to change the wavelength of the light emitted from the light emitting device 100.

14 is a diagram illustrating a backlight unit using a light emitting element according to an embodiment. However, the backlight unit of FIG. 14 is an example of a light unit, but is not limited thereto.

Referring to FIG. 14, the backlight unit may include a bottom cover 1400, an optical guide member 1100 disposed in the bottom cover 1400, and at least one side or a bottom surface of the optical guide member 1100. It may include a light emitting module 1000. In addition, a reflective sheet 1300 may be disposed under the light guide member 1100.

The bottom cover 1400 may be formed by forming a box having an upper surface open to accommodate the light guide member 1100, the light emitting module 1000, and the reflective sheet 1300. Or it may be formed of a resin material but is not limited thereto.

The light emitting module 1000 may include a substrate and a light emitting device package according to a plurality of embodiments mounted on the substrate. The light emitting device package according to the plurality of embodiments may provide light to the light guide member 1100.

As shown, the light emitting module 1000 may be disposed on at least one of the inner side surfaces of the bottom cover 1400, thereby providing light toward at least one side of the light guide member 1100. have.

However, the light emitting module 1000 may be disposed on the bottom surface of the bottom cover 1400 to provide light toward the bottom of the light guide member 1100, which may be variously modified according to the design of the backlight unit. It is possible, but not limited to this.

The light guide member 1100 may be disposed in the bottom cover 1400. The light guide member 1100 may guide the light provided from the light emitting module 1000 to a display panel (not shown) by making a surface light source.

When the light emitting module 1000 is disposed on the side surface of the light guide member 1100, the light guide member 1100 may be, for example, a light guide panel (LGP).

The light guide plate may be formed of, for example, one of an acrylic resin series such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), COC, and polyethylene naphthalate (PEN) resin.

When the light emitting module 1000 is disposed on the bottom surface of the light guide member 1100, the light guide member 1100 may include at least one of the light guide plate or the optical sheet.

The optical sheet may include, for example, at least one of a diffusion sheet, a light collecting sheet, or a luminance rising sheet. For example, the optical sheet may be formed by sequentially stacking the diffusion sheet, the light collecting sheet, and the luminance increasing sheet. In this case, the diffusion sheet evenly spreads the light emitted from the light emitting module 1000, and the diffused light may be focused onto a display panel (not shown) by the light collecting sheet. In this case, the light emitted from the light collecting sheet is randomly polarized light, and the luminance increase sheet may increase the degree of polarization of the light emitted from the light collecting sheet. The light collecting sheet may be, for example, a horizontal or / and vertical prism sheet. In addition, the luminance increase sheet may be, for example, a roughness enhancement film.

The reflective sheet 1300 may be disposed below the light guide member 1100. The reflective sheet 1300 may reflect light emitted through the bottom surface of the light guide member 1100 toward the exit surface of the light guide member 1100.

The reflective sheet 1300 may be formed of a resin material having good reflectance, for example, PET, PC, PVC resin, etc., but is not limited thereto.

15 is a perspective view 1100 of a lighting unit using the light emitting device package 200 according to the embodiment. However, the lighting unit of FIG. 15 is an example of a light unit, but is not limited thereto.

Referring to FIG. 15, the lighting unit 1100 is installed in the case body 1110, the light emitting module unit 1130 installed in the case body 1110, and the case body 1110 and supplies power from an external power source. It may include a connection terminal 1120 provided.

The case body 1110 may be formed of a material having good heat dissipation characteristics. For example, the case body 1110 may be formed of a metal material or a resin material.

The light emitting module unit 1130 may include a substrate 1132 and a light emitting device package 200 according to at least one embodiment mounted on the substrate 1132.

The substrate 1132 may be a circuit pattern printed on an insulator, and for example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and the like. It may include.

In addition, the substrate 1132 may be formed of a material that reflects light efficiently, or the surface may be formed of a color that reflects light efficiently, for example, white, silver, or the like.

The light emitting device package 200 according to the at least one embodiment may be mounted on the substrate 1132. Each of the light emitting device packages 200 may include at least one light emitting diode (LED). The light emitting diodes may include colored light emitting diodes emitting red, green, blue, or white colored light, and UV light emitting diodes emitting ultraviolet (UV) light.

The light emitting module unit 1130 may be arranged to have a combination of various light emitting devices to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1120 may be electrically connected to the light emitting module unit 1130 to supply power. According to FIG. 8, the connection terminal 1120 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1120 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

100 light emitting device 110 light emitting structure
112: first conductive semiconductor layer 114: active layer
116: second conductive semiconductor layer 120: ohmic layer
130: multiple thin film mirror 140: reflective layer
150: bonding layer 160: conductive support member

Claims (7)

Reflective layer;
A plurality of multiple thin film mirrors formed on the reflective layer and having a multilayer structure in which a first layer having a first refractive index and a second layer having a second refractive index different from the first refractive index are alternately stacked;
An ohmic layer formed on the plurality of multiple thin film mirrors and the reflective layer; And
Is formed on the ohmic layer, and includes a light emitting structure for generating light including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer,
The reflective layer extends between the plurality of multiple thin film mirrors to contact the ohmic layer,
The thicknesses of the first and second layers of the multiple thin film mirrors are each λ / 4 nm, wherein λ is a wavelength of light emitted from the active layer, and n is the first layer or the second layer. Is the refractive index of, m is the natural number,
The first layer of the multiple thin-film mirror includes at least one of SiO 2 , MgF 2 , The second layer comprises at least one of TiO 2 , Si 3 N 4 , ZrO 2 , TaBO 3 ,
The thickness of the ohmic layer is λ / 4rm, wherein r is the refractive index of the ohmic layer, m is a natural number. The method of claim 1,
The reflective layer is formed of a metal or an alloy containing at least one of silver (Ag), aluminum (Al), palladium (Pd), copper (Cu), platinum (Pt). The method of claim 1,
The ohmic layer includes at least one of a transparent conductive layer and a metal. The method of claim 1,
The ohmic layer may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), A light emitting device comprising at least one of aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, Ni, Ag, or Au. The method of claim 1,
Light emitting device comprising a light extraction pattern on the upper surface of the light emitting structure. The method of claim 1,
Light emitting device comprising a passivation layer on the side of the light emitting structure. The method of claim 1,
A side of the light emitting structure is inclined light emitting device.

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014110197A1 (en) * 2013-01-09 2014-07-17 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
US9768357B2 (en) 2013-01-09 2017-09-19 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
US10276749B2 (en) 2013-01-09 2019-04-30 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014110197A1 (en) * 2013-01-09 2014-07-17 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
US9287449B2 (en) 2013-01-09 2016-03-15 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
US9768357B2 (en) 2013-01-09 2017-09-19 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
US10276749B2 (en) 2013-01-09 2019-04-30 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact

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