KR20110130939A - Non-conductive film and sputtering apparatus thereof - Google Patents

Non-conductive film and sputtering apparatus thereof Download PDF

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Publication number
KR20110130939A
KR20110130939A KR1020100050512A KR20100050512A KR20110130939A KR 20110130939 A KR20110130939 A KR 20110130939A KR 1020100050512 A KR1020100050512 A KR 1020100050512A KR 20100050512 A KR20100050512 A KR 20100050512A KR 20110130939 A KR20110130939 A KR 20110130939A
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South Korea
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thin film
film layer
silicon
coating
tin alloy
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KR1020100050512A
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Korean (ko)
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KR101131962B1 (en
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권정안
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(주)위너테크
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE: A non-conductive film coated unit and a manufacturing device thereof are provided to express various colors on a target even if a separate paint layer is not formed since a silicon layer and a tin alloy layer are formed on the inner surface of a transparent target. CONSTITUTION: A non-conductive film coated unit comprises a target(100), a silicon layer(110), and a tin alloy layer(120). The target is a transparent material. The silicon layer is formed by depositing silicon on the surface of the target in a vacuum state. The tin alloy layer is formed by depositing tin alloy on the surface of the silicon layer in a vacuum state. The tin alloy layer is formed to be less than critical thickness in order to have non conductivity. The silicon film layer is formed on the inner surface of the target where the exposure of the target is prevented. The tin alloy layer is protected from the outside.

Description

Non-Conductive Film and Sputtering Apparatus Thereof}

The present invention relates to a nonconductive thin film coating and a manufacturing apparatus. More specifically, by forming a silicon thin film layer and a tin alloy thin film layer on the inner surface of the coating material of the transparent material, it is possible to express a variety of colors on the coating object without forming a separate paint layer, the coating layer is formed on the inner surface of the coating object This eliminates the need for a separate UV coating layer to protect the coating layer, simplifying the manufacturing process, reducing manufacturing time and manufacturing costs, and eliminating the need for a paint layer to express color, thereby fundamentally blocking harmful substances in the paint. The present invention relates to a non-conductive thin film coating and a manufacturing apparatus that can prevent environmental pollution as well as provide a comfortable working environment, and can automatically adjust the thickness of the silicon thin film layer to variously adjust the color of the coating object.

In general, a transparent acryl or polycarbonate (PC) is used as a case of a mobile communication terminal or an electronic product, and nickel (Ni), aluminum (Al), or chromium (Cr) is used to show a gorgeous appearance design effect. By coating a thin metal film such as to express the silver color of the metallic feeling.

In particular, however, it has been found that the use of the metal thin film, which is a conductive material, in the case of the mobile communication terminal affects the wireless signal and causes a disconnection during a call. In addition, an electrostatic discharge (ESD) test, one of quality inspection standards, caused an explosion of a metal thin film.

In order to solve this problem, recently, a non-conductive coating method using a tin (Sn) or tin (Sn) -indium (In) thin film is used for a cell phone case or a button. In this case, it is possible to prevent damage of the non-conductive thin film coating layer. For this purpose, a separate UV coating or coating layer for expressing color is being progressed separately.

1 is a view conceptually showing a coating layer structure of a conventional nonconductive thin film coating according to the prior art.

As shown in FIG. 1, a general non-conductive thin film coating according to the prior art is formed in such a manner that a metal coating layer having a metallic feel is coated on a coating object 100 having a transparent material, such as a case of various electronic products. As described above, the tin alloy thin film layer 120 having non-conductivity is mainly used. The tin alloy thin film layer 120 is coated on the external exposed surface of the coating object 100, and thus, a separate UV coating layer 140 is coated on the outside so as to protect the tin alloy thin film layer 120. At this time, in order to express a specific color, as shown in FIG. 1, the paint layer 130 is formed by coating a paint of a specific color between the tin alloy thin film layer 120 and the UV coating layer 140.

According to this structure, the general non-conductive thin film coating according to the prior art needs to form a separate UV coating layer 140 to protect the tin alloy thin film layer 120, as well as a separate paint layer 130 to express the color. Since it is necessary to form, the work process is complicated, takes a long time to produce, there was a problem such as increased production costs. In addition, since the paint layer 130 is formed by using a separate paint to express color, environmental harmful substances (waste paint, waste activated carbon, etc.) are generated by the paint when the paint is used, causing environmental pollution and There was also a problem that the health of workers also seriously threatened.

The present invention is invented to solve the problems of the prior art, an object of the present invention by forming a silicon thin film layer and a tin alloy thin film layer on the inner surface of the coating object of a transparent material, even if a separate coating layer is not formed on the coating object It is to provide a non-conductive thin film coating that can represent a variety of colors.

Another object of the present invention is that it is not necessary to form a paint layer for the color representation and UV coating layer for protecting the coating layer, so that the manufacturing process is simple, manufacturing time and manufacturing cost is reduced, and it is possible to fundamentally block the harmful substances of the paint It is possible to prevent environmental pollution as well as to provide a comfortable working environment, thereby providing a non-conductive thin film coating that can eliminate the threat to the health of workers.

Still another object of the present invention is to provide a non-conductive thin film coating apparatus for continuously forming a silicon thin film layer and a tin alloy thin film layer and automatically adjusting the thickness of the silicon thin film layer to variously adjust the color of the coating object.

The present invention is a coating object of a transparent material; A silicon thin film layer formed by vacuum depositing silicon on the surface of the coating object; And a tin alloy thin film layer formed by vacuum depositing a tin alloy on the surface of the silicon thin film layer and formed to a thickness less than or equal to a threshold thickness so as to have a non-conductivity. It provides a non-conductive thin film coating, characterized in that formed on the inner surface to prevent the external exposure of.

In this case, the tin alloy thin film layer may include a tin, aluminum and indium components.

In this case, the tin alloy thin film layer may have a component ratio of 100: (0.1 to 5): (1 to 50) of tin: aluminum: indium.

In addition, the tin alloy thin film layer may be formed to a thickness of less than 400 kPa.

In addition, the color of the coating object generated by the silicon thin film layer and the tin alloy thin film layer may be configured to be variously changed by adjusting the thickness of the silicon thin film layer.

On the other hand, in the manufacturing apparatus for manufacturing the non-conductive thin film coating, Cylindrical vacuum casing in which a vacuum chamber is formed; A rotating barrel mounted inside the vacuum casing so as to be rotatable about a longitudinal axis of the vacuum casing, the outer peripheral surface of which the coating object is mounted; A rotation driver for rotating the rotation barrel; A vacuum regulator for forming a vacuum pressure in the vacuum chamber; A process gas injector for injecting process gas into the vacuum chamber; A silicon sputter target mounted to the vacuum casing to sputter-deposit the silicon thin film layer on the coating object; A tin alloy sputter target mounted to the vacuum casing to sputter deposit and deposit the tin alloy thin film layer on the silicon thin film layer; And first and second plasma generators for supplying power for plasma generation to the silicon sputter target and the tin alloy sputter target, respectively, wherein the silicon thin film layer and the tin alloy thin film layer are applied to the coating object according to the rotation of the rotating barrel. It provides a non-conductive thin film coating device manufacturing apparatus characterized in that to form a sputter deposition sequentially.

At this time, the silicon thin film layer is repeatedly sputtered on the coating object by the silicon sputter target every one rotation of the rotating barrel, so that the thickness of the final silicon thin film layer may be adjusted according to the rotation speed of the rotating barrel.

In addition, a plurality of the silicon sputter target is provided, the silicon thin film layer is sequentially sputtered deposition by a plurality of the silicon sputter target within one rotation section of the rotating barrel, the plurality of the silicon sputter target The thickness of the final silicon thin film layer may be adjusted according to the number of sputter deposition of the silicon thin film layer.

According to the present invention, by forming a silicon thin film layer and a tin alloy thin film layer on the inner surface of the coating material of the transparent material, it is possible to express a variety of colors on the coating object even without forming a separate paint layer, the coating layer on the inner surface of the coating object Because it is formed, there is no need for a separate UV coating layer for protecting the coating layer, thereby simplifying the manufacturing process and reducing the manufacturing time and manufacturing cost.

In addition, since the paint layer is unnecessary for expressing colors, it is possible to fundamentally block harmful substances in the paint, thereby preventing environmental pollution and providing a pleasant working environment, thereby removing a threat to the health of workers. It can work.

In addition, by continuously forming the silicon thin film layer and the tin alloy thin film layer to automatically adjust the thickness of the silicon thin film layer, there is an effect that can be variously adjusted the color of the coating object.

1 is a view conceptually showing a coating layer structure of a conventional nonconductive thin film coating according to the prior art;
2 conceptually illustrates a coating layer structure of a non-conductive thin film coating according to an embodiment of the present invention;
3 is a conceptual diagram conceptually showing a configuration of an apparatus for manufacturing a nonconductive thin film coating body according to an embodiment of the present invention;
4 is a functional block diagram illustrating control-related functions of the apparatus for manufacturing a nonconductive thin film coating body according to an embodiment of the present invention;
5 is a conceptual diagram conceptually showing a configuration of an apparatus for manufacturing a nonconductive thin film coating body according to another embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. First of all, in adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are used as much as possible even if displayed on different drawings. In addition, in describing the present invention, when it is determined that the detailed description of the related well-known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted.

2 is a diagram conceptually illustrating a coating layer structure of a non-conductive thin film coating according to an embodiment of the present invention.

As shown in FIG. 2, the nonconductive thin film coating body according to an embodiment of the present invention is a silicon thin film layer formed by a vacuum deposition on the inner surface of the coating object 100 and the coating object 100 ( 110) and the tin alloy thin film layer 120 is configured.

The coating object 100 may be applied to various materials such as a mobile phone case or various electronics cases, and a transparent material so that the silicon thin film layer 110 and the tin alloy thin film layer 120 that are vacuum deposited on the inner surface may be visually observed from the outside. It is preferable to form. That is, in the nonconductive thin film coating according to the embodiment of the present invention, the coating object 100 is formed of a transparent material, and the silicon thin film layer 110 and the tin alloy thin film layer are vacuum deposited on the inner surface of the coating object 100. It is configured to represent the color for the coating object 100 through 120. In this case, the transparent material applied to the coating object 100 may be glass, polycarbonate, ABS, and the like.

The silicon thin film layer 110 is formed by vacuum depositing silicon on the inner surface of the coating object 100, the tin alloy thin film layer 120 is formed by vacuum depositing a tin alloy on the surface of the silicon thin film layer 110. do. That is, the silicon thin film layer 110 and the tin alloy thin film layer 120 are continuously formed in two upper and lower stages on the inner surface of the coating object 100. At this time, the silicon thin film layer 110 and the tin alloy thin film layer 120 is formed on the inner surface to prevent the external exposure of the coating object 100 to be protected from the outside.

That is, when the coating object 100 is a mobile phone case or a case of various electronic products, the coating object 100 has an outer surface exposed to the outside and an inner surface constituting the inner space without being exposed to the outside. The thin film coating is a coating layer is formed on the outer surface of the coating object 100 as described in the prior art, the non-conductive thin film coating according to an embodiment of the present invention the coating layer is formed on the inner surface of the coating object 100 do. At this time, when the coating object 100 is applied as a transparent material as described above, the vacuum thin film layer 110 and the tin alloy thin film layer 120 is vacuum-deposited on the inner surface of the coating object 100 transparent coating object 100 Since it is visible from the outside through), the color to be expressed on the coating object 100 through this method. This is performed in a manner of expressing various colors by controlling the thickness of the silicon thin film layer 110 while expressing the color of the metal material through the tin alloy thin film layer 120.

The silicon thin film layer 110 and the tin alloy thin film layer 120 are vacuum deposited on the coating object 100 by a sputtering deposition method according to an embodiment of the present invention. The sputtering deposition method is a method of injecting a sputtering gas into a vacuum chamber made of a vacuum atmosphere to collide with a target material to be deposited to generate a plasma and then to coat it on a substrate. In general, the sputtering gas uses argon (Ar) which is an inert gas. Sputtering systems use a target as a cathode and a substrate as an anode. When the power is applied, the injected sputtering gas collides with electrons emitted from the cathode and is ionized (Ar +), and these ions are attracted to the target which is the cathode and collide with the target. This collision transfers the energy ions held to the target, releases atoms and molecules of the target material into the vacuum chamber, and releases the target material into a thin film on the substrate. The manufacturing technology of the thin film using the sputtering can precisely control the thickness of the coating layer up to several tens of nm, and can easily process the partial coating process using a simple mask.

The silicon thin film layer 110 is formed through a sputtering deposition method in which silicon is deposited on the coating object 100 by using silicon (Si) as a negative electrode target material and using the coating object 100 as an anode. In the vacuum chamber, it reacts with a trace amount of nitrogen and oxygen gas and deposits on the coating object 100. The silicon thin film layer 110 formed as described above may change the refractive index of light according to its thickness, thereby changing the color emitted to the outside by adjusting the thickness of the silicon thin film layer 110. That is, when the person looks at the coating object 100 through the eye from the outside of the coating object 100 as shown in Figure 2, the tin alloy thin film layer 120 through the transparent coating object 100 to the human eye By the color is shown, at this time, by adjusting the thickness of the silicon thin film layer 110 can be changed in various ways to change the color visible to the human eye by changing the refractive index of the light. For example, if the same sputtering deposition process is repeatedly performed, the thickness of the silicon thin film layer 110 is increased stepwise by a predetermined unit thickness generated by the one-time sputtering deposition process, and thus the silicon thin film layer 110 and The color of the coating object 100 generated by the tin alloy thin film layer 120 may be configured to change in the order of light yellow, yellow, deep yellow, gold, wine, purple, purple, blue, green, and indigo. Therefore, the non-conductive thin film coating according to the embodiment of the present invention can express various colors through the silicon thin film layer 110 without a separate paint.

The tin alloy thin film layer may be composed of tin (Sn), aluminum (Al), and indium (In) components according to an embodiment of the present invention, wherein the component ratio of tin: aluminum: indium is 100: (0.1 to 5): It can be formed from (1 to 50). Such tin alloys are conductive in the ingot state, but exhibit non-conductive properties when the thin film layer is formed through the sputter deposition method in a high vacuum state. Therefore, the tin alloy thin film layer 120 of the present invention should be formed to a threshold thickness or less so as to exhibit non-conducting properties, such a critical thickness is sufficient to be set to 400 Å or less in accordance with an embodiment of the present invention It can be seen through the experiment to indicate.

Pure indium (In) thin film has high reactivity with oxygen in the air, so it is oxidized too quickly even when coating thin film of desired thickness, so that the transmittance of thin film is increased. Has the disadvantage of being easily corroded. Therefore, in the tin alloy thin film layer 120 according to the embodiment of the present invention, indium (In), which is resistant to acids and alkalis and has excellent durability, is added to the tin (Sn) component that is stable in the air and has a strong non-conductivity. In addition, since tin is yellow in color, aluminum was added to reduce this yellow color. Therefore, the tin alloy thin film layer 120 according to an embodiment of the present invention has a non-conductive property in a state below a critical thickness, and the change in transmittance is reduced due to the oxidation prevention, the material is relatively hard, and the yellow color is degraded. Other color representations can be performed more easily.

According to the structure described above, the non-conductive thin film coating body according to an embodiment of the present invention forms the silicon thin film layer 110 and the tin alloy thin film layer 120 on the inner surface of the coating object 100 of the transparent material, the prior art In contrast, even without forming a separate paint layer, a variety of colors can be expressed on the coating object 100. Since the coating layer is formed on the inner surface of the coating object 100, a separate UV coating layer is unnecessary for protecting the coating layer. Therefore, since there is no need to form a paint layer and a UV coating layer, the manufacturing process is simple, time and manufacturing cost are reduced, and it is possible to fundamentally block harmful substances in the paint, thereby preventing environmental pollution as well as comfortable work. The environment can be provided, thus removing the threat to the health of the worker.

3 is a conceptual diagram conceptually showing a configuration of an apparatus for manufacturing a nonconductive thin film coating body according to an embodiment of the present invention, and FIG. 4 is a control related function of the apparatus for manufacturing a nonconductive thin film coating body according to an embodiment of the present invention. This is a functional block diagram illustrating this.

An apparatus for manufacturing a nonconductive thin film coating body according to an embodiment of the present invention is an apparatus for manufacturing the nonconductive thin film coating body described above using a sputtering deposition method, and includes a vacuum casing 200 and a vacuum regulating device 210. And a process gas injector 220, a rotating barrel 300, a rotating driver 310, a silicon sputter target 400, a tin alloy sputter target 500, and first and second plasma generators ( And 410 and 420.

Vacuum casing 200 is formed to be sealed to form a vacuum chamber (C) therein, one side is equipped with a vacuum control device 210 to form a vacuum pressure in the vacuum chamber (C), the other side A process gas injector 220 for injecting a process gas, for example, an argon (Ar) gas, which is an inert gas, is mounted in the vacuum chamber C for the sputter deposition process. Various apparatuses may be used for the vacuum regulator 210 according to the degree of vacuum pressure required. The base vacuum pressure for sputter deposition may be formed using a rotary pump and a booster pump. After the base vacuum, a high degree of vacuum can be created by using a Poly Cold auxiliary facility and a Cryo Pump. For example, using a rotary pump and a booster pump to form a vacuum pressure of the vacuum chamber (C) to 10 Torr, the base vacuum pressure, and then to 3x10 -3 ~ 1x10 -3 Torr using a Poly Cold auxiliary equipment, Cryo Pump can be used to form and maintain 9x10 -5 ~ 8x10 -5 Torr.

Rotating barrel 300 is rotatably mounted about the longitudinal axis of the vacuum casing 200 inside the vacuum casing 200, the outer peripheral surface may be mounted at least one so that the coating object 100 is disposed at regular intervals. have. The rotation barrel 300 is rotationally driven by a separate rotation drive 310.

Meanwhile, a silicon sputter target 400 is mounted on the inner circumferential surface of the vacuum casing 200 so as to sputter deposit the silicon thin film layer 110 on the coating object 100, and the tin alloy thin film layer 120 on the surface of the silicon thin film layer 110. The tin alloy sputter target 500 is mounted to allow sputter deposition. In addition, first and second plasma generating devices 410 and 420 are provided to supply power for plasma generation to the silicon sputter target 400 and the tin alloy sputter target 500, respectively.

According to this structure, the coating object 100 mounted on the outer circumferential surface of the rotating barrel 300 has the silicon thin film layer 110 through the silicon sputter target 400 and the tin alloy sputter target 500 as the rotating barrel 300 rotates. And the tin alloy thin film layer 120 are sequentially formed by sputter deposition.

In more detail, as described above, after adjusting the vacuum pressure of the vacuum chamber C in the vacuum casing 200 through the vacuum regulator 210, an inert gas, for example, is processed through the process gas injector 220. Inject argon gas. After inert gas injection, the vacuum pressure is maintained at 8 × 10 −3 to 1 × 10 −3 Torr, and then a negative voltage is applied to the silicon sputter target 400 through the first plasma generator 410 to generate plasma. When the plasma is generated as described above, plasma ions collide with the silicon sputter target 400 as described in the above-described sputtering deposition method, which causes silicon (Si) to be emitted from the silicon sputter target 400 in atomic or molecular units. The thin film is deposited on the coating object 100 mounted on the rotating barrel 300. At this time, since the rotating barrel 300 rotates, a plurality of coating objects 100 mounted on the rotating barrel 300 are sputtered and deposited on the silicon thin film layer 110 through one silicon sputter target 400. Is formed.

As described above, the tin alloy thin film layer 120 is formed on the coating target 100 in which the silicon thin film layer 110 is continuously formed according to the rotation of the rotating barrel 300 through the second plasma generator 420. It is formed sequentially on the surface. That is, plasma is generated by generating a negative voltage to the tin alloy sputter target 500 through the second plasma generator 420, and when plasma is generated, plasma ions collide with the tin alloy sputter target 500 as described above. As a result, the tin alloy is released from the tin alloy sputter target 500 in atomic or molecular units, and is deposited in a thin film form on the surface of the silicon thin film layer 110 of the coating object 100. In this case, the vacuum pressure and the plasma generation power applied in the silicon sputtering deposition process and the tin alloy sputtering deposition process may be independently applied according to their characteristics.

According to this structure, the non-conductive thin film coating device manufacturing apparatus according to an embodiment of the present invention is equipped with a plurality of coating object 100 to the rotating barrel 300, while rotating the rotating barrel 300 to the coating object 100 The silicon thin film layer 110 and the tin alloy thin film layer 120 may be sputtered and deposited sequentially or continuously.

Accordingly, the rotating barrel 300 may be configured to rotate continuously at a constant speed, but may be configured to rotate after a predetermined interval by an index table method to secure a uniform sputtering deposition time. . In this case, the silicon thin film layer 110 and the tin alloy thin film layer 120 may be configured to be sputter-deposited, respectively, in a stopped section.

Such a nonconductive thin film coating apparatus manufacturing apparatus is preferably configured to control the sputtering deposition process through a separate control unit 600 as shown in FIG. That is, the rotation driver 310 may be controlled by the control unit 600 to control the rotation speed of the rotation barrel 300 to be constant or intermittently rotate, the vacuum control device 210 and the process gas injector 220 Also controlled by the control unit 600 may be configured to adjust the vacuum pressure and the process gas injection state according to the process. In addition, the control unit 600 performs this control process in connection with the first and second plasma generating apparatuses 410 and 420, and the first and second sputtering processes are performed to facilitate the silicon sputter deposition and the tin alloy sputter deposition. And second plasma generators 410 and 420.

As described above, the apparatus for manufacturing a nonconductive thin film coating body according to an exemplary embodiment of the present invention may rotate the rotating barrel 300 through one silicon sputter target 400 and one tin alloy sputter target 500. The silicon thin film layer 110 and the tin alloy thin film layer 120 are continuously formed on the coating object 100. In order to control the thickness of the silicon thin film layer 110 according to this structure, it is necessary to control the rotation speed of the rotating barrel 300 and the silicon sputtering deposition process. That is, when the rotating barrel 300 is rotated while the first plasma generating device 410 is operated, the silicon thin film layer is coated on the coating object 100 by the silicon sputter target 400 at each rotation of the rotating barrel 300. 110 is to be deposited once, in this case, to control the operation of the second plasma generating device 420 to stop by the required number of rotation of the rotating barrel 300. Therefore, whenever the rotating barrel 300 rotates, only the silicon thin film layer 110 is repeatedly deposited on the coating object 100, and thus the silicon thin film layer 110 is increased by a unit thickness that is deposited once.

According to this structure, in the non-conductive thin film coating device manufacturing apparatus according to an embodiment of the present invention, the thickness of the final silicon thin film layer 110 can be adjusted according to the rotational speed of the rotating barrel 300, such a silicon thin film layer 110 As described above, various colors of the coating object 100 may be expressed by adjusting the thickness.

5 is a conceptual diagram conceptually showing a configuration of an apparatus for manufacturing a nonconductive thin film coating body according to another embodiment of the present invention.

The nonconductive thin film coating apparatus manufacturing apparatus according to another embodiment of the present invention may include a plurality of silicon sputter targets 400 as shown in FIG. 5. In this case, a plurality of first plasma generating apparatuses 410 may also be provided to correspond to the silicon sputter target 400. In addition, if necessary, a plurality of tin alloy sputter targets 500 and second plasma generators 420 may also be provided. In addition to the sputter deposition method by the plurality of silicon sputter target 400, the basic sputter deposition process is the same as the above-described manufacturing apparatus, the same description will be omitted for the purpose of overlap prevention.

As such, when a plurality of silicon sputter targets 400 are mounted on the inner circumferential surface of the vacuum casing 200, as the rotating barrel 300 rotates, the coating object 100 is continuously / repeated by a plurality of silicon sputter targets 400. As a result, the silicon thin film layer 110 is formed. That is, the silicon thin film layer 110 is repeatedly formed as many as the number of silicon sputter targets 400 during one rotation of the rotating barrel 300. Therefore, unlike the manufacturing apparatus illustrated in FIG. 3, the manufacturing apparatus illustrated in FIG. 5 controls the operating state of the silicon sputter target 400 according to a user's need, thereby allowing the silicon thin film layer ( 110) can adjust the thickness. That is, in the manufacturing apparatus having such a structure, the silicon thin film layer 110 is sequentially formed by the plurality of silicon sputter targets 400 within one rotation period of the rotating barrel 300, and thus, the plurality of silicon sputter targets 400 are formed. The thickness of the final silicon thin film layer 110 is adjusted according to the number of sputter deposition of the silicon thin film layer 110.

For example, when the rotating barrel 300 is rotated while the three silicon sputter targets 400 of the plurality of silicon sputter targets 400 are operated through the control unit 600, the rotating barrel 300 rotates once. While the silicon thin film layer 110 is repeatedly formed on the coating object 100 by three silicon sputter targets 400, the thickness of the final silicon thin film layer 110 is formed by three times the thickness of the sputtering deposition once. If the four silicon sputter targets 400 are operated, the thickness of the final silicon thin film layer 110 is formed by four times the thickness of one-time sputter deposition according to the same principle. Meanwhile, after the silicon thin film layer 110 is formed as described above, the tin alloy thin film layer 120 may be continuously formed by the tin alloy sputter target 500 within one rotation section of the rotating barrel 300.

The above description is merely illustrative of the technical idea of the present invention, and those skilled in the art to which the present invention pertains may make various modifications and variations without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas falling within the scope of the same shall be construed as falling within the scope of the present invention.

100: coating object 110: silicon thin film layer
120: tin alloy thin film layer 200: vacuum casing
300: rotating barrel 400: silicon sputter target
500: tin alloy sputter target 600: control unit

Claims (8)

A coating object of a transparent material;
A silicon thin film layer formed by vacuum depositing silicon on the surface of the coating object; And
Tin alloy thin film layer formed by vacuum deposition of a tin alloy on the surface of the silicon thin film layer and formed below a critical thickness to have a non-conductivity
And the silicon thin film layer is formed on an inner surface of which the external exposure of the coating object is prevented so that the tin alloy thin film layer is protected from the outside.
The method of claim 1,
The tin alloy thin film layer is a non-conductive thin film coating, characterized in that comprises a tin, aluminum and indium components.
The method of claim 2,
The tin alloy thin film layer is a non-conductive thin film coating, characterized in that the composition ratio of tin: aluminum: indium is 100: (0.1 to 5): (1 to 50).
The method of claim 2,
The tin alloy thin film layer is a non-conductive thin film coating, characterized in that formed to a thickness of less than 400 kPa.
The method according to any one of claims 1 to 4,
The non-conductive thin film coating, characterized in that the color of the coating object generated by the silicon thin film layer and the tin alloy thin film layer is variously changed by controlling the thickness of the silicon thin film layer.
In the manufacturing apparatus for manufacturing the nonconductive thin film coating of claim 5,
A cylindrical vacuum casing in which a vacuum chamber is formed;
A rotating barrel mounted inside the vacuum casing so as to be rotatable about a longitudinal axis of the vacuum casing, the outer peripheral surface of which the coating object is mounted;
A rotation driver for rotating the rotation barrel;
A vacuum regulator for forming a vacuum pressure in the vacuum chamber;
A process gas injector for injecting process gas into the vacuum chamber;
A silicon sputter target mounted to the vacuum casing to sputter-deposit the silicon thin film layer on the coating object;
A tin alloy sputter target mounted to the vacuum casing to sputter deposit and deposit the tin alloy thin film layer on the silicon thin film layer; And
First and second plasma generating devices for supplying power for plasma generation to the silicon sputter target and tin alloy sputter target, respectively
And a non-conductive thin film coating apparatus for forming a sputter-deposited deposition of the silicon thin film layer and the tin alloy thin film layer on the coating object in accordance with the rotation of the rotating barrel.
The method according to claim 6,
The non-conductive thin film coating body, wherein the silicon thin film layer is repeatedly sputtered and deposited on the coating object by the silicon sputter target every one rotation of the rotating barrel, and thus the thickness of the final silicon thin film layer is adjusted according to the rotation speed of the rotating barrel. Manufacturing device.
The method according to claim 6,
The silicon sputter target is provided in plural, the silicon thin film layer is sequentially sputtered and deposited on the coating object by a plurality of silicon sputter targets within one rotation period of the rotating barrel, and the silicon by the plurality of silicon sputter targets Non-conductive thin film coating device manufacturing apparatus, characterized in that the thickness of the final silicon thin film layer is adjusted according to the number of sputter deposition of the thin film layer.

KR20100050512A 2010-05-28 2010-05-28 Non-Conductive Film and Sputtering Apparatus Thereof KR101131962B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190089584A (en) * 2018-01-23 2019-07-31 주식회사 셀코스 Non-Conductive Semi-Transparent Metallic Color Film and Manufacturing Method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190089584A (en) * 2018-01-23 2019-07-31 주식회사 셀코스 Non-Conductive Semi-Transparent Metallic Color Film and Manufacturing Method thereof
CN111630202A (en) * 2018-01-23 2020-09-04 株式会社Selcos Non-conductive metal color semitransparent film and preparation method thereof
CN111630202B (en) * 2018-01-23 2022-10-11 株式会社Selcos Non-conductive metal color semitransparent film and preparation method thereof

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