KR20110118337A - Apparatus for determining of plasma process chamber cleaning period by using skin effect - Google Patents

Abstract

An apparatus for determining the cleaning timing of a process chamber is disclosed. The present invention, the cavity-like member, the measurement cavity 110; Measuring plate 120; Using the measuring line 122 extending from the lower surface of the measuring plate 120 to the outside of the process chamber, the skin power, which is the power consumption of the skin effect due to the process by-product attached to the surface of the measuring plate, is calculated. A skin power pattern determination unit 130 for determining the skin power pattern information which is information on a temporal change of the skin power by periodically storing the skin power; By comparing the skin power pattern information 132 with the cleaning reference information 142 indicating the degree of skin power that enables normal operation of the process according to the process conditions of the process performed in the process chamber, the process chamber And a cleaning timing determining unit 140 for determining a cleaning timing of the power source, wherein the frequency of the power source used in the skin power measurement has a band different from the frequency of the power source used in the plasma organic apparatus. According to the present invention, interference between the plasma organic apparatus and the monitoring apparatus is reduced, and the cleaning timing of the process chamber can be determined more easily.

Description

Apparatus for determining of plasma process chamber cleaning period by using skin effect}

The present invention relates to an apparatus for determining a cleaning cycle of a plasma process chamber, and more particularly, to eliminate interference between the plasma organic apparatus and the cleaning cycle determining apparatus, thereby increasing measurement accuracy and process accuracy, and facilitating installation and use. It relates to a cleaning cycle determination device.

Thin film deposition and etching processes are one of the most important technologies in the manufacturing process of semiconductor or flat panel display devices. In the 1920s, the iodine method was used to obtain high-purity metals, and since the 1940s, high-purity germanium and silicon manufacturing methods were used. In the 1970s, for the development of integrated technology, Plasma deposition and etching techniques are used.

CVD (chemical vapor deposition) is used as a representative method of thin film formation technology using plasma. This technique is a method of reacting a gaseous compound on a heated substrate surface and depositing the product on the substrate surface, which has the advantage of less damage to the substrate surface due to less contribution of high-speed particles than the PVD method. have.

As the semiconductor process using plasma is widely used, there is a need for an apparatus for monitoring the inside of the chamber. The chamber monitoring device is necessary for process refinement and large area uniformity. By measuring and monitoring the condition inside the process chamber, the abnormality of the process chamber can be detected and the cleaning cycle can be determined. Contributes to increased utilization and yield.

1 is a view showing an apparatus for monitoring a conventional process chamber.

However, the conventional monitoring device as shown in Figure 1 has the following problems.

First, most conventional monitoring apparatuses use an indirect method of predicting a chamber state by monitoring a plasma. At present, it is one of very difficult tasks to diagnose and predict the characteristics of plasma as it is represented by a black box. There is a limit of monitoring.

Second, as shown in FIG. 1, methods for analyzing the type and concentration of radicals or compounds formed in the plasma and the type and concentration of charged particles are currently used as plasma diagnostic equipment. Among the representative Langmuir probes, There is a problem. First, as shown in FIG. 1, the mass and ion energy distribution of the charged particles formed in the plasma cannot be measured and thus have limitations in the analysis. In addition, a probe for analyzing the plasma generates a plasma. There is a problem in that it can affect the plasma itself by being inserted directly into it, and the effective current collecting area of the probe used for plasma diagnosis is not the actual surface area of the probe but the surface area of the sheath formed around the probe In addition, the probe located in the plasma may emit secondary electrons due to collisions with ions, electrons, and photons, which may cause measurement errors. Large current flows in this case. Plasma may fluctuate severely. Various problems occur due to the use of.

Third, in the case of another conventional plasma diagnostic method, optical emission spectroscopy (OES), an Ar actinometry is often used for quantitative analysis to consider the intensity of a specific wavelength and the intensity of the wavelength caused by Ar, and also the number of peaks detected and The superposition of these peaks has not been clearly interpreted yet, which limits the analysis.

Fourth, QMS (quadrupole mass spectrometer), another conventional plasma diagnostic method, heats filaments to accelerate hot electrons, collide with neutral particles to make ions, and apply direct current and alternating voltage to each pole to neutral particles. And the mass of the ions, which is useful for measuring the amount of plasma reactive species since the mass spectrum of the gas in a cold plasma is very simple to analyze. However, since this method has not developed mass-produced techniques for measuring the density, mass, and energy distribution of ions, radicals dissociated by collision with electrons, it is still a limitation to predict the state inside the process chamber using them. Have.

Accordingly, the present invention has been made to solve the above problems, the object of the present invention is to prevent the effect of the first monitoring device from the plasma apparatus, so as not to interfere with the operating characteristics of the process chamber from the second plasma device to the monitoring device In order to improve the monitoring accuracy of the monitoring device by suppressing the effect of the present invention, and to provide a device for determining the cleaning cycle of the plasma process chamber, which can be determined more easily by the simple equipment.

The present invention for solving the above problems, in the process chamber 1 for performing a process using a plasma consisting of a chamber wall 10, the chamber liner 20 and the plasma organic apparatus 30 in the process chamber An apparatus (100) for determining a chamber cleaning cycle for cleaning a reaction byproduct, the cavity-shaped member extending through the chamber wall (10) and the chamber liner (20) and into the process space of the process chamber. Measurement cavity formed by; A plate member formed of a ceramic material, the upper surface having the same surface height as the chamber liner 20 and disposed to face the process space through the measurement cavity 110; Using the measuring line 122 extending from the lower surface of the measuring plate 120 to the outside of the process chamber, the skin power, which is the power consumption of the skin effect due to the process by-product attached to the surface of the measuring plate, is calculated. A skin power pattern determination unit 130 for determining the skin power pattern information which is information on a temporal change of the skin power by periodically storing the skin power; By comparing the skin power pattern information 132 with the cleaning reference information 142 indicating the degree of skin power that enables normal operation of the process according to the process conditions of the process performed in the process chamber, the process chamber And a cleaning timing determining unit 140 for determining a cleaning timing of the power source, wherein the frequency of the power source used in the skin power measurement has a band different from the frequency of the power source used in the plasma organic apparatus.

In one embodiment, the cleaning timing determination unit 140, after performing the dry cleaning in the past whether the level of the dry cleaning reference power consumption indicating the level of returning to the normal power consumption pattern of the past or not. It is characterized by determining the cleaning time of dry cleaning depending on whether or not.

In one embodiment, the cleaning timing determination unit 140, if the dry cleaning is performed by the cleaning time of the determined dry cleaning does not return to the reference power consumption even after a predetermined time after the predetermined time of the wet cleaning It is characterized by determining the washing time.

In one embodiment, the skin power pattern determiner 130, the RF power source 310 is a frequency variable high frequency power source; A voltage current measurement unit 320 for measuring the skin voltage and the skin current generated by the power applied to the measurement plate by the RF power source; A skin power calculator (330) for calculating skin power based on the skin voltage and skin current; And a pattern determination unit 340 for generating the skin power pattern information by storing, searching, and editing the skin power over time.

In one embodiment, the RF compensation unit 150 for filtering the frequency between the measurement plate 120 and the skin power pattern determiner 130 to prevent frequency interference from the plasma organic apparatus to the skin power pattern determiner. It further comprises a).

In an exemplary embodiment, the cleaning timing determiner 140 may determine the cleaning timing by analyzing past skin power pattern information and current skin power pattern information using a pattern recognition algorithm.

According to the present invention, since the skin power pattern analysis is used instead of the plasma diagnostic equipment, the cleaning timing can be determined more easily and accurately, and the uptime of the process chamber is increased, and the maintenance period and the cost are reduced.

In addition, according to the present invention, since the probe is not used unlike the related art, the apparatus for monitoring the process chamber is prevented from affecting the process apparatus, that is, the plasma organic apparatus.

Further, according to the present invention, since the frequency of the monitoring apparatus and the frequency of the plasma organic apparatus can be different, the process is prevented from being affected by the monitoring apparatus.

In addition, according to the present invention, the RF compensation unit prevents the influence from the plasma organic apparatus to the monitoring apparatus of the present invention, which enables more accurate measurement.

In addition, according to the present invention, it is possible to determine the cleaning cycle of the process chamber more easily with less expensive equipment.

In addition, according to the present invention, since the skin power pattern information is generated in the form of digital signal processing, it can be utilized as information for various maintenance operations of the process chamber, such as pattern classification and analysis.

1 is a view showing an apparatus for monitoring a conventional process chamber.
FIG. 2 is a diagram illustrating a process chamber in which a cleaning cycle determining apparatus of a process chamber is installed according to an exemplary embodiment of the present invention.
3 is a detailed view of the cleaning cycle determination device of the present invention.
4 is a diagram illustrating an internal configuration of the skin power pattern determination unit 130.
5 and 6 are views illustrating an operation of determining the cleaning timing by the cleaning timing determining unit 140. FIG. 5 is a circuit diagram for measuring power consumption of the skin effect, and FIG. 6 is a visual representation of power consumption pattern information. Show the graph shown.
7 is a view showing a cleaning cycle determination device 200 according to another embodiment of the present invention.
8A and 8B illustrate the functions of the RF compensator added by the embodiment of FIG. 7.

Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

2 is a view showing a process chamber surrounding a cleaning chamber determining apparatus of a process chamber according to an embodiment of the present invention, Figure 3 is a detailed view of the cleaning cycle determining apparatus of the present invention, Figure 4 is a skin power pattern determination It is a figure which shows the internal structure of the part 130. FIG. FIG. 6 is a view illustrating a method for determining a cleaning cycle by the cleaning cycle determination device of the present invention. FIG. 6 illustrates a graph in which dry and wet cleaning timings are displayed when process by-products having high electrical resistance are accumulated on the surface of a measurement plate.

The peripheral configuration of the process chamber in which the present invention is installed and the configuration of the present invention will be described with reference to the drawings.

The process chamber 1 for performing a process using plasma includes a chamber wall 10, a chamber liner 20, and a plasma organic apparatus 30. The cleaning cycle determination device according to the present invention extends from the outside of the process chamber to a process space that is an interior space of the process chamber.

The chamber wall 10 is a plate-like structure that is chemically stable and supports the process chamber.

The chamber liner 20 is a plate-shaped member made of a chemically stable material. The chamber liner 20 surrounds the inside of the chamber wall 10 to protect the inner surface of the chamber wall 10 from chemical reactions occurring in the process space, and maintains the process chamber. In order to facilitate the maintenance work has a removable structure from the chamber wall (10). The chamber liner 20 is generally made of a ceramic material, which is a chemically stable material, and is preferably made of alumina (Al 2 O 3).

Plasma organic device 30 is a device for generating a plasma in the process chamber, RF source power 35 to induce the plasma using the power, RF bias power 37 for adjusting the kinetic energy of the plasma ions And an RF antenna 34 for dispersing the plasma on top of the process chamber.

In addition, a cathode 40 for placing a process object, a gas injector 50 for introducing a process gas, and a chamber window 60 for blocking the outside to form a vacuum of the process chamber are installed in the process chamber. It is possible. The configuration of the plasma organic apparatus and the additional configuration around the process chamber are well known in the art.

The cleaning cycle determination apparatus 100 of the process chamber of the present invention includes a measurement cavity 110, a measurement plate 120, a skin power pattern determination unit 130, and a cleaning timing determination unit 140. A description with reference to FIGS. 2 to 4 is as follows.

The measurement cavity 110 is a cavity-shaped member and extends through the chamber wall 10 and the chamber liner 20 into the process space of the process chamber. The measurement line 122 and the measurement plate 120 to be described later are located inside the measurement cavity 110.

The measuring plate 120 is a plate-shaped member formed of a ceramic material, and has an upper surface having the same surface height as the chamber liner 20 and is disposed through the measuring cavity 110 to face the process space.

The height of the measuring plate 120 to have the same height as the height of the chamber liner 20 is to prevent the apparatus according to the present invention from affecting the process chamber. This is described in more detail in the Effects section. The matching height is also to improve the maintenance work of the chamber liner and the sealing between the measuring plate and the chamber liner. In a separate embodiment, it is also possible to form a sealing member for sealing the space between the chamber liner 2 and the measuring plate 120.

While the chamber liner 20 is usually about 3 mm to 10 mm, the measuring plate 120 preferably has a thickness of several to several tens of micrometers depending on the frequency of use. This is because the measurement plate is as thick as the thickness of the chamber liner that the skin effect cannot be easily measured and observed. In particular, even when the difference in power consumption is seen when t1 increases in FIG. 5, the thickness of the reference point should be small enough to see the skin effect.

In one embodiment, the measuring plate 120 is preferably made of the same material as the chamber liner 20. Since the measurement plate 120 is in contact with the process space through the measurement cavity 110, it needs to be chemically stable. This is because it does not need to be too small or excessively large. In a preferred embodiment, the measurement plate 120 is alumina (Al 2 O 3) is widely used.

The skin power pattern determiner 130 consumes the skin effect due to the process by-product attached to the surface of the measurement plate by using the measurement line extending from the lower surface of the measurement plate 120 to the outside of the process chamber. The skin power pattern information 132, which is information on the temporal change of the skin power, is determined by calculating the skin power, which is electric power, and periodically storing and editing the skin power.

As shown in FIG. 4, the skin power pattern determination unit 130 measures the skin voltage and skin current generated by the power applied to the measurement plate by the RF power supply 310 and the RF power supply, which are frequency variable high frequency power. The voltage current measurement unit 320, the skin power calculation unit 330 that calculates the skin power based on the skin voltage and the skin current, and the skin power pattern information are stored, retrieved, and edited with time, thereby storing the skin power pattern information. And a pattern determination unit 340 to generate. That is, the epidermal power pattern determiner 130 periodically measures, calculates, and stores the epidermal power according to time, and then converts the epidermal power into a form suitable for processing by the cleaning timing determiner 140 to be described later. . The analysis of the power consumption pattern is performed in the cleaning timing determiner.

The cleaning timing determiner 140 determines the cleaning timing 146 of the process chamber by comparing the skin power pattern information 132 with the cleaning reference information 142. The cleaning reference information 142 refers to the degree of skin power that enables the normal operation of the process according to the process conditions of the process performed in the process chamber. The cleaning reference information 142 is predetermined by the user based on the type of the process by-product, the type of the process, and the quality level of the process desired by the user.

In one embodiment of the present invention, the frequency of the power source used in the skin power measurement is characterized in that it has a band different from the frequency of the power source used in the plasma organic apparatus. In the present invention, since the frequency used for skin power use uses a variable RF power source, a frequency different from the power source frequency used in the plasma organic apparatus can be used. In addition, unlike the conventional plasma diagnostic equipment, since the power of different frequencies can be used, the power by the device does not affect the plasma. Since the general plasma induced frequency is currently using 2khz, 13.56khz, 27khz, etc., it is necessary to use a variable RF power supply for measuring the voltage current in the present invention at frequencies except these frequencies.

5 and 6 are views illustrating an operation of determining the cleaning timing by the cleaning timing determining unit 140. FIG. 5 is a circuit diagram for measuring power consumption of the skin effect, and FIG. 6 is a visual representation of power consumption pattern information. Show the graph shown.

The principle of determining the cleaning cycle, that is, the cleaning cycle of the present invention is as follows.

First, as shown in FIG. 5, when the process is repeatedly performed, process by-products accumulate on the surface of the chamber liner and the measurement plate (ie, t1 is increased). Process by-products are materials that are deposited or etched away from the surface of the process object in the process space and are to be removed and treated as unnecessary materials in the process.

Next, when process by-products accumulate on the measurement plate, the power consumption between both ends of the measurement plate changes in the skin effect. The skin effect refers to a phenomenon in which a current flows only near the surface of a conductor when a high frequency current flows through the conductor. After all, due to the skin effect, the power consumption between p1 and p2 in FIG. 5 is changed by the amount (thickness) of the process byproduct M accumulated by t1.

For example, when process by-products having a higher electrical resistance than the original material of the measuring plate accumulate on the upper surface of the measuring plate, the skin effect increases the electrical resistance of the surface of the measuring plate, thereby increasing the power consumption generated in the measuring plate. . On the contrary, when process by-products having a lower electrical resistance than the original material of the measurement plate are accumulated on the upper surface of the measurement plate, the skin effect decreases the electric resistance of the surface of the measurement plate, thereby reducing the power consumption generated in the measurement plate. .

Since the information on the electrical resistance of the process byproduct is known in advance, the measured power consumption increased or decreased from the reference value means that the process byproduct is being accumulated, which informs the user that the cleaning cycle is approaching. Therefore, in the present invention, it is possible to determine the cleaning cycle by determining a threshold that requires the cleaning cycle and comparing it with the power consumption measured periodically.

FIG. 6 is a view illustrating a method for determining a cleaning cycle by the cleaning cycle determination device of the present invention. FIG. 6 illustrates a graph in which dry and wet cleaning timings are displayed when process by-products having high electrical resistance are accumulated on the surface of a measurement plate.

In Fig. 6, the sawtooth graph shows the measured power consumption pattern, p1 and p2 are dry cleaning reference power consumption and dry cleaning normal power consumption, respectively, p3 and p4 are wet cleaning reference power consumption and wet cleaning normal power consumption, respectively. Indicates.

In one embodiment, the cleaning timing determiner 140 is determined by dividing the cleaning time into a dry cleaning time and a wet cleaning time. That is, the cleaning reference information 142 means the dry cleaning cleaning reference information, which is the reference information for dry cleaning, and the wet cleaning cleaning reference information, which is the reference information for wet cleaning, respectively, and the dry cleaning cleaning reference information is the dry cleaning reference power consumption p1. And dry cleaning normal power consumption p2, and the wet cleaning cleaning reference information includes wet cleaning reference power consumption p3 and wet cleaning normal power consumption p4. Dry cleaning reference power consumption p1 is a threshold value of the skin power that is the basis for determining that the apparatus according to the present invention requires dry cleaning. It is a predetermined value, and as a result, the level of the measured power consumption after the past dry cleaning is performed means a level returning to the normal power consumption pattern in the past. In addition, dry cleaning normal power consumption p2 refers to the level of skin power such that the device according to the present invention can be judged to be able to perform the process again when dry cleaning is performed. This value is also predetermined by the user in consideration of the kind and requirements of the process, the kind of by-products of the process, and the electrical resistance. The wet clean reference power consumption p3 and the wet clean normal power consumption p4 are the same as the dry clean reference power consumption p1 and dry clean normal power consumption p2, respectively, except for the definition of the cleaning method.

Explain dry and wet cleaning. Dry cleaning is to clean the inside of the chamber by using a plasma, the same method as the general process, but only process conditions are carried out under different conditions. Dry cleaning has a short cleaning time but has a limited cleaning effect. Therefore, dry cleaning is generally used only to extend the wet cleaning cycle. Wet cleaning is a chemical cleaning method in which a chamber liner is decomposed and immersed in a chemical solution. The cleaning effect is excellent, but it is not cost and time efficient due to the increased downtime of the process, the need for seasoning and test processes, and the need to open the plasma organic equipment. Therefore, wet cleaning is generally used in parallel with dry cleaning.

In the period of 0 to t1 in FIG. 6, since the electrical resistance of the process byproduct is larger than the electrical resistance of the measurement plate, the measurement power consumption increases as the process byproducts accumulate. When the measured power consumption reaches a predetermined dry cleaning reference power consumption, the cleaning cycle determination device determines that dry cleaning is necessary, and the user performs dry cleaning. That is, at time t1, the user performs dry cleaning.

In the period of t1 to t2, the measurement power consumption decreases to a steady state due to the effect of dry cleaning. This period is during the dry cleaning period.

In the period of t2 to t3, the measurement power consumption increases again for the same process. The process of the period 0 to t1 is due to the process by-product due to the performance as described above.

In the period t3 to t9, the process is repeated if the measured power consumption is measured within the range of the dry clean reference power p1 and the dry clean normal power p2. That is, when the process by-product increases and the measured power consumption reaches the dry cleaning reference power consumption, dry cleaning is performed. When the measured power consumption reaches the dry cleaning normal power consumption, dry cleaning is stopped and the process is performed again.

 From t9 to t10, even if the measured power consumption reaches the dry cleaning reference power consumption p1 and performs dry cleaning, the measured power consumption does not reach the dry cleaning normal power consumption p2 or rather increases to reach the wet cleaning reference power consumption p3. Wet cleaning is performed. In this case, the cleaning cycle determination device of the present invention determines t10 as the wet cleaning time. Therefore, the user performs a wet cleaning, and again, the user checks whether the measured power consumption falls below the dry cleaning reference power consumption.

In the worst case, if the measured power consumption does not decrease to the wet clean normal power p4 even after wet cleaning, or the dry clean normal power p2 is not reduced, the cleaning cycle determination device of the present invention determines this state as a fault state. To inform the user. The user may decide to perform maintenance work on the process chamber in the event of a fault.

The above process is applied when the electrical resistance of the process by-product is greater than the electrical resistance of the measurement plate, that is, when the measurement power consumption increases as the process by-products accumulate. If the electrical resistance of the process by-product is smaller than the electrical resistance of the measurement plate, a sawtooth graph indicating the measurement power consumption is formed in the downward direction, and thus dry cleaning reference power consumption p1, dry cleaning normal power consumption p2, and wet cleaning. The reference power consumption p3 and the dry cleaning normal power consumption p4 are all opposite to the graph.

 In one embodiment, the cleaning timing determiner 140, after performing the dry cleaning of the past whether the level of the dry cleaning reference power consumption indicating the level of returning to the normal power consumption pattern of the past or not. Determining the cleaning time of the dry cleaning according to, and if the current consumption is not returned to the reference power consumption even after a predetermined time after the dry cleaning is performed by the cleaning time of the determined dry cleaning, the current time is determined as the cleaning time of the wet cleaning. do. In this way, the limitations of dry cleaning can be identified and the cleaning phase can be shifted to the wet cleaning stage to enable rapid maintenance response.

In one embodiment, the cleaning timing determiner 140 may determine the cleaning cycle by comparing the previous skin power pattern information and the current skin power pattern information. This is in consideration of the variety of processes, and is useful when the skin power pattern information is not necessarily classified as a threshold. That is, by geometrically analyzing past skin power patterns, it is possible to determine whether the current skin power patterns are normal. If it is determined to be abnormal, the current time is determined as the cleaning time. In the present invention, since power consumption is patterned and stored according to time, a signal processing method such as digital signal processing may be used, which enables various digital arithmetic processing. In particular, for pattern analysis, algorithms for recognizing, classifying and judging geometric patterns such as K-means are employed. Thus, in the present invention, since the skin power pattern is generated in a form capable of signal processing and digital operation, it can be used in other forms for the maintenance work of the process chamber, thereby improving the maintenance and repair work of the process chamber.

7 is a view showing a cleaning cycle determination device 200 according to another embodiment of the present invention, Figures 8a and 8b is a view for explaining the function of the RF compensation unit added by the embodiment of FIG.

In the embodiment of FIG. 7, the RF compensation unit filters the frequency between the measurement plate 120 and the skin power pattern determiner 130 to prevent frequency interference from the plasma organic apparatus to the skin power pattern determiner. It further includes 150. In addition, the RF compensation unit is preferably composed of an inductor-capacitor circuit (LC circuit).

8A is a circuit diagram of the measurement plate 120 and the voltage and current measuring unit 320 when there is no RF compensation unit 150, Figure 8b is a measurement plate 120 and voltage when the RF compensation unit 150 is added It is a connection circuit diagram of the current measuring unit 320. As shown in FIG. 8B, the inductor-capacitor circuit positioned between the measurement plate 120 and the voltage current measurement unit 320 may have electrical energy of a specific frequency reaching from the plasma organic device 30 to the voltage current measurement unit 320. It serves to block. This is because the LC circuit acts as a specific frequency cut filter. The parameters of L and C used in the circuit are determined by the frequency of the power source used in the plasma organic apparatus 30.

According to this embodiment, since the high frequency energy generated from the plasma organic apparatus affects the apparatus of the present invention and prevents the skin power pattern information from being distorted, more accurate measurement of the skin power pattern information and more accurate cleaning timing The decision is possible.

So far I looked at the center of the preferred embodiment for the present invention. Those skilled in the art will appreciate that the present invention can be implemented in a modified form without departing from the essential features of the present invention. Therefore, the disclosed embodiments should be considered in an illustrative rather than a restrictive sense. The scope of the present invention is shown in the claims rather than the foregoing description, and all differences within the scope will be construed as being included in the present invention.

100: cleaning cycle determination device
10: chamber wall 20: chamber liner
30: plasma organic device 40: cathode
50: gas injector 60: window
110: measuring cavity 120: measuring plate
130: skin power pattern determination unit 140: cleaning timing determination unit
150: RF compensation unit

Claims (7)

Chamber cleaning cycle for cleaning the reaction by-products inside the process chamber in the process chamber (1), which comprises a chamber wall (10), a chamber liner (20), and a plasma organic apparatus (30), which performs a process using plasma. In the apparatus 100 for determining the
A cavity having a cavity shape, the measurement cavity 110 extending through the chamber wall 10 and the chamber liner 20 and extending into the process space of the process chamber;
A plate member formed of a ceramic material, the upper surface having the same surface height as the chamber liner 20 and disposed to face the process space through the measurement cavity 110;
Using the measuring line 122 extending from the lower surface of the measuring plate 120 to the outside of the process chamber, the skin power, which is the power consumption of the skin effect due to the process by-product attached to the surface of the measuring plate, is calculated. A skin power pattern determination unit 130 for determining the skin power pattern information which is information on a temporal change of the skin power by periodically storing the skin power;
By comparing the skin power pattern information 132 with the cleaning reference information 142 indicating the degree of skin power that enables normal operation of the process according to the process conditions of the process performed in the process chamber, the process chamber A cleaning timing determining unit 140 for determining a cleaning timing of the
And a frequency of a power source used in the skin power measurement has a band different from that of a power source used in the plasma organic apparatus. The method of claim 1, wherein the cleaning timing determiner 140,
After the dry cleaning is carried out in the past characterized in that the cleaning time of the dry cleaning depending on whether or not the level of the dry cleaning reference power consumption representing the level of return to the normal power consumption pattern of the past is determined. Device to determine the cleaning cycle of the process chamber. The method of claim 2, wherein the cleaning timing determiner 140,
The cleaning cycle of the process chamber, characterized in that the current time is determined as the cleaning time of the wet cleaning, if the dry power is not returned to the reference power consumption even after a predetermined time after the dry cleaning is performed by the cleaning time of the determined dry cleaning. Device to determine. The method of claim 1, wherein the skin power pattern determination unit 130,
An RF power supply unit 310 which is a frequency variable high frequency power supply;
A voltage current measurement unit 320 for measuring the skin voltage and the skin current generated by the power applied to the measurement plate by the RF power source;
A skin power calculator (330) for calculating skin power based on the skin voltage and skin current;
And a pattern determination unit (340) for generating the skin power pattern information by storing, retrieving, and editing the skin power over time. The RF compensation unit of claim 2, wherein the RF compensation unit filters the frequency between the measurement plate 120 and the skin power pattern determiner 130 to prevent frequency interference from the plasma organic apparatus to the skin power pattern determiner. 150) further comprising a cleaning cycle of the process chamber characterized in that it comprises a. 7. The apparatus of claim 6, wherein the RF compensator comprises an inductor-capacitor circuit (LC circuit). The process chamber of claim 1, wherein the cleaning timing determiner 140 determines the cleaning timing by analyzing past skin power pattern information and current skin power pattern information using a pattern recognition algorithm. Device to determine the cleaning cycle.

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