KR20110117410A - Nitride semiconductor light emitting device - Google Patents
Nitride semiconductor light emitting device Download PDFInfo
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- KR20110117410A KR20110117410A KR1020100036849A KR20100036849A KR20110117410A KR 20110117410 A KR20110117410 A KR 20110117410A KR 1020100036849 A KR1020100036849 A KR 1020100036849A KR 20100036849 A KR20100036849 A KR 20100036849A KR 20110117410 A KR20110117410 A KR 20110117410A
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- nitride semiconductor
- layer
- light emitting
- emitting device
- semiconductor light
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 112
- 239000004065 semiconductor Substances 0.000 title claims abstract description 112
- 230000010287 polarization Effects 0.000 claims abstract description 85
- 239000012535 impurity Substances 0.000 claims abstract description 76
- 230000004888 barrier function Effects 0.000 claims abstract description 68
- 230000000903 blocking effect Effects 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 229910021480 group 4 element Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- 229910002601 GaN Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000005452 bending Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000005428 wave function Effects 0.000 description 3
- AAEQXEDPVFIFDK-UHFFFAOYSA-N 3-(4-fluorobenzoyl)-2-(2-methylpropanoyl)-n,3-diphenyloxirane-2-carboxamide Chemical compound C=1C=CC=CC=1NC(=O)C1(C(=O)C(C)C)OC1(C=1C=CC=CC=1)C(=O)C1=CC=C(F)C=C1 AAEQXEDPVFIFDK-UHFFFAOYSA-N 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- -1 i.e. Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention relates to a nitride semiconductor light emitting device, n-type nitride semiconductor layer; At least one of a plurality of quantum barrier layers and quantum well layers alternately stacked on the n-type nitride semiconductor layer and having a negative interface polarization charge among the quantum barrier layers adjacent to the quantum well layer; An active layer delta-doped with donor impurities at an interface of the quantum barrier layer; It provides a nitride semiconductor light emitting device comprising a; and a p-type nitride semiconductor layer formed on the active layer.
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nitride semiconductor light emitting device, and more particularly, to a nitride semiconductor light emitting device in which donor or acceptor impurities are delta doped at an interface between a quantum well layer and an adjacent quantum barrier layer.
Recently, III-V nitride semiconductors such as GaN have been spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their excellent physical and chemical properties. have. Light emitting devices using III-V group nitride semiconductor materials are widely used in light emitting devices for obtaining light in the blue or green wavelength band, and such light emitting devices are used as light sources for various products such as home appliances, electronic displays, general lighting, and headlamps of automobiles. It is applied to.
The conventional nitride semiconductor light emitting device includes a sapphire substrate and an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed thereon. The p-type nitride semiconductor layer and the active layer are mesa-etched to expose a portion of the upper surface of the n-type nitride semiconductor layer, and the n-type and p-type electrodes are provided on the upper surface of the exposed n-type nitride semiconductor layer and the upper surface of the p-type nitride semiconductor layer, respectively. It is.
The active layer may have a multi-quantum well (MQW) structure in which a plurality of GaN quantum barrier layers and an InGaN quantum well layer are alternately stacked, and an n-type nitride semiconductor is applied when a predetermined current is applied to each electrode. Electrons provided from the layer and holes provided from the p-type nitride semiconductor layer are recombined in the active layer of the multi-quantum well structure to emit light.
However, in the active layer of the conventional nitride semiconductor light emitting device, there is a spontaneous polarization inherent in the quantum barrier layer and the quantum well layer, and piezoelectric polarization generated from the lattice constant difference between the two layers. The sum of branch spontaneous polarization and piezoelectric polarization becomes net polarization present in the active layer.
That is, polarization sheet charge is generated at the interface between the quantum barrier layer made of GaN and the quantum well layer made of InGaN, thereby generating an electric field corresponding to several MV / cm in the active layer. It causes energy band bending. The energy band warpage phenomenon causes a decrease in the radiative recombination efficiency by reducing the overlap of electron and hole wave functions in the quantum well layer.
In addition, as the current injection amount increases, electrons that cannot be recombined easily overflow to the p-type nitride semiconductor layer, thereby causing an efficiency droop phenomenon in which quantum efficiency is significantly reduced.
Accordingly, an object of the present invention is to solve the above problems, and an object of the present invention is to delta-dope donor or acceptor impurities at an interface between a quantum well layer and an adjacent quantum barrier layer. The present invention provides a nitride semiconductor light emitting device capable of canceling interfacial polarization charges to improve luminous efficiency.
A nitride semiconductor light emitting device according to an embodiment of the present invention for achieving the above object, an n-type nitride semiconductor layer; At least one of a plurality of quantum barrier layers and quantum well layers alternately stacked on the n-type nitride semiconductor layer and having a negative interface polarization charge among the quantum barrier layers adjacent to the quantum well layer; An active layer delta-doped with donor impurities at an interface of the quantum barrier layer; And a p-type nitride semiconductor layer formed on the active layer.
Here, the donor impurity may be a Group 4 element, and the Group 4 element may include any one of Si, Ge, and Sn.
In addition, the donor impurity may be doped to a density capable of canceling the whole of the negative interfacial polarization charge density of the negative interfacial polarization charge density.
The semiconductor device may further include an electron blocking layer formed between the quantum barrier layer disposed at the top of the quantum barrier layer of the active layer and the p-type nitride semiconductor layer.
In addition, acceptor impurities may be delta doped at an interface between the electron blocking layer and the quantum barrier layer.
In addition, the acceptor impurity may be a Group 2 element, and the Group 2 element may include Mg.
In addition, acceptor impurities may be delta-doped at an interface between at least one quantum well layer having a positive interfacial polarization charge among the quantum well layers adjacent to the quantum barrier layer.
In addition, the acceptor impurity may be a Group 2 element, and the Group 2 element may include Mg.
In addition, the acceptor impurity may be doped to a density capable of canceling the total amount of the interfacial polarization charge density from 0.5 to the total amount of the interfacial polarization charge density.
In addition, the nitride semiconductor light emitting device according to another embodiment of the present invention for achieving the above object, an n-type nitride semiconductor layer; At least one of a plurality of quantum barrier layer and the quantum well layer formed on the n-type nitride semiconductor layer, and alternately stacked, the positive interfacial polarization charge of the quantum well layer adjacent to the quantum barrier layer An active layer having delta doped acceptor impurities at an interface of the quantum well layer; And a p-type nitride semiconductor layer formed on the active layer.
Here, the acceptor impurity may be a Group 2 element, and the Group 2 element may include Mg.
In addition, the acceptor impurity may be doped to a density capable of canceling the total amount of the interfacial polarization charge density from 0.5 to the total amount of the interfacial polarization charge density.
The semiconductor device may further include an electron blocking layer formed between the quantum barrier layer disposed at the top of the quantum barrier layer of the active layer and the p-type nitride semiconductor layer.
In addition, acceptor impurities may be delta doped at an interface between the electron blocking layer and the quantum barrier layer.
In addition, the acceptor impurity may be a Group 2 element, and the Group 2 element may include Mg.
As described above, according to the nitride semiconductor light emitting device according to the present invention, ionization is performed by delta doping of a donor impurity such as Si at the interface between the quantum well layer and the quantum barrier layer in which the negative interfacial polarization charge is present. Donor impurities, i.e., Si + atoms, can be made to cancel the negative interfacial polarization charge.
Accordingly, the present invention can reduce the electric field polarization in the active layer by reducing the interfacial polarization charge between the quantum barrier layer and the quantum well layer. In addition, the reduction of the electric field in the active layer may suppress the energy band warpage and increase the overlap of the electron and hole wave functions in the quantum well layer. Accordingly, the present invention has the effect of improving the light output by improving the internal quantum efficiency.
In addition, the present invention can be expected to reduce the forward voltage (Vf) by suppressing the energy band bending phenomenon as described above.
In addition, the present invention has the advantage of reducing the droop phenomenon in the high-current region by reducing the generation of the electric field in the active layer.
Therefore, since the present invention can obtain high luminous efficiency at high current as well as low current, it is possible to provide a highly efficient nitride semiconductor light emitting device applicable to various fields such as general lighting devices and automobile head lamps.
1 is a cross-sectional view showing the structure of a nitride semiconductor light emitting device according to the first embodiment of the present invention.
FIG. 2 is an enlarged partial cross-sectional view of the periphery of the active layer of FIG. 1; FIG.
3 is an energy band diagram schematically showing the interfacial polarization charge around the active layer of FIG.
FIG. 3A illustrates the case where the impurities are not delta-doped, and FIG. 3B illustrates the case where the impurities are delta-doped.
4 is a cross-sectional view illustrating a structure of a nitride semiconductor light emitting device according to a second exemplary embodiment of the present invention.
5 is an enlarged partial cross-sectional view of the periphery of the active layer of FIG.
FIG. 6 is an energy band diagram schematically showing interfacial polarization charges around the active layer of FIG. 5.
FIG. 6A illustrates the case where the impurities are not delta-doped, and FIG. 6B illustrates the case where the impurities are delta-doped.
7 is an enlarged partial cross-sectional view of a periphery of an active layer of a nitride semiconductor light emitting device according to a modification of the second exemplary embodiment of the present invention;
FIG. 8 is an energy band diagram schematically showing interfacial polarization charges around the active layer of FIG. 7; FIG.
9 is an enlarged partial cross-sectional view of a periphery of an active layer of a nitride semiconductor light emitting device according to a third exemplary embodiment of the present invention.
FIG. 10 is an energy band diagram schematically showing interfacial polarization charges around the active layer of FIG. 9; FIG.
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings of the nitride semiconductor light emitting device. The following embodiments are provided as examples to sufficiently convey the spirit of the present invention to those skilled in the art. Accordingly, the invention is not limited to the embodiments described below and may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.
First, the nitride semiconductor light emitting device according to the first embodiment of the present invention will be described in detail with reference to FIGS. 1 to 3.
1 is a cross-sectional view illustrating a structure of a nitride semiconductor light emitting device according to a first exemplary embodiment of the present invention, and FIG. 2 is an enlarged partial cross-sectional view of the periphery of the active layer of FIG. 1.
1 and 2, the nitride semiconductor light emitting device according to the embodiment of the present invention, the
Here, the partial region of the p-type
Although not shown in the drawings, a transparent electrode (not shown) may be further formed on the p-type
The transparent electrode is to improve the current spreading effect by increasing the current injection area, indium tin oxide (ITO), tin oxide (TO), indium zinc oxide (IZO) and indium tin zinc oxide (ITZO) It may be made, including at least one.
The
The n-type
The n-type
The n-type
In general, a buffer layer (not shown) may be formed between the n-type
The
The
The p-type
The
In the nitride semiconductor light emitting device according to the first embodiment of the present invention, at least one quantum barrier in which the negative interface polarization charge δ − is present among the
As the donor impurity (D), a Group 4 element such as Si may be used, and in addition to Si, a Group 4 element such as Ge or Sn may be used.
When Si is used as the donor impurity (D), delta doping of Si forms a GaN layer, which is a
In the delta doping, since impurities are doped to form an atomic layer of 1 to 2 coverage, the crystallinity of the
FIG. 3 is an energy band diagram schematically showing the interfacial polarization charge around the active layer of FIG. 2, in which FIG. 3A illustrates delta doping without impurities and FIG. 3B illustrates delta doping of impurities.
First, as illustrated in FIG. 3A, when the dopant is not delta-doped in the
These negative and positive interfacial polarization charges δ − , δ + generate polarization-induced electric fields in the
However, like the nitride semiconductor light emitting device according to the first exemplary embodiment of the present invention, the quantum barrier layer in which the negative interface polarization charge δ − is present in the
Here, in the present exemplary embodiment, the case where the negative interfacial polarization charge (δ − ) is canceled to zero through Si delta doping is shown. However, the donor impurity (D) may have a density of the negative interfacial polarization charge (δ − ). It is preferred to be doped to a density capable of canceling 0.5 to the entirety of the negative interfacial polarization charge δ − .
This is because when the donor impurity D cancels by a density smaller than 0.5 of the negative interfacial polarization charge δ − , it may be difficult to sufficiently suppress the generation of a polarization induced electric field in the
In general, an interface polarization sheet charge having a density of about 1e13 / cm 2 to 2e13 / cm 2 exists at the interface between the
Thus, for example, when a negative interface polarization charge is present at an interface of the
That is, the donor impurity (D) may be doped at a density of 0.5 or more of the negative interfacial polarization charge density or less.
As described above, in the present embodiment, the delta doping of the donor impurity (D) completely eliminates or halves the negative interfacial polarization charge (δ − ) among the interfacial polarization charges existing between the
Accordingly, in the present exemplary embodiment, the overlapping of the electron and hole wave functions in the
In addition, when the energy band warpage phenomenon can be suppressed as described above, a reduction effect of the forward voltage Vf can be expected.
In addition, in this embodiment, as described above, by reducing the generation of the electric field in the
Therefore, according to the embodiment of the present invention, it is possible to obtain a high luminous efficiency at high current as well as low current, it is possible to provide a nitride semiconductor light emitting device that can be used in headlamps and general lighting devices of automobiles.
Next, the nitride semiconductor light emitting device according to the second embodiment of the present invention will be described in detail with reference to FIGS. 4 to 6.
4 is a cross-sectional view illustrating a structure of a nitride semiconductor light emitting device according to a second exemplary embodiment of the present invention, and FIG. 5 is an enlarged partial cross-sectional view of the periphery of the active layer of FIG. 4.
4 and 5, the nitride semiconductor light emitting device according to the second embodiment of the present invention has the same structure as most of the nitride semiconductor light emitting device according to the first embodiment of the present invention, except that the active layer An electron having an energy band gap greater than that of the p-type
The
In this case, an acceptor impurity (A) is delta-doped at an interface between the
FIG. 6 is an energy band diagram schematically showing the interfacial polarization charge around the active layer of FIG. 5, in which FIG. 6A illustrates the case where the impurities are not delta-doped, and FIG. 6B illustrates the case where the impurities are delta-doped.
As shown in FIG. 6A, when the dopant is not delta-doped in the
In addition, a positive interface polarization charge (δ + ) exists at an interface between the
However, like the nitride semiconductor light emitting device according to the second embodiment of the present invention, the quantum barrier layer in which the negative interface polarization charge δ − is present in the
The nitride semiconductor light emitting device according to the second embodiment of the present invention can obtain the same operation and effect as in the first embodiment of the present invention, and between the
Next, a nitride semiconductor light emitting device according to a modification of the second embodiment of the present invention will be described in detail with reference to FIGS. 7 and 8.
FIG. 7 is an enlarged partial cross-sectional view of a periphery of an active layer of a nitride semiconductor light emitting device according to a modification of the second exemplary embodiment of the present invention, and FIG. 8 is an energy band diagram schematically showing the interfacial polarization charge around the active layer of FIG. 7. .
7 and 8, the nitride semiconductor light emitting device according to the modification of the second embodiment of the present invention, the nitride semiconductor light emitting device according to the second embodiment of the present invention shown in Figure 6b and most of the configuration Is the same, but acceptor impurities are formed at the interface of at least one
In this case, the acceptor impurity (A) may be a Group 2 element such as Mg, and may offset the total of the positive interfacial polarization charge (δ + ) density from 0.5 to the positive interfacial polarization charge (δ + ) density. Can be doped to any density.
That is, as shown in FIG. 6B, when acceptor impurities are not doped at the interface of the
However, in the nitride semiconductor light emitting device according to the modified example of the second embodiment of the present invention, the positive polarization polarization charge δ + is present in the
The nitride semiconductor light emitting device according to the modification of the second embodiment of the present invention can obtain the same operation and effect as in the second embodiment of the present invention, and not only the positive interface polarization charge but also the positive interface polarization charge By canceling, there is an advantage that the degree of energy band warpage can be further reduced and the light efficiency of the light emitting device can be further improved as compared with the second embodiment.
Next, the nitride semiconductor light emitting device according to the third embodiment of the present invention will be described in detail with reference to FIGS. 6A, 9, and 10.
FIG. 9 is an enlarged partial cross-sectional view of an active layer around a nitride semiconductor light emitting device according to a third exemplary embodiment of the present invention, and FIG. 10 is an energy band diagram schematically showing interfacial polarization charges around the active layer of FIG.
9 and 10, the nitride semiconductor light emitting device according to the third embodiment of the present invention has the same structure as that of the nitride semiconductor light emitting device according to the second embodiment of the present invention, except that it is a quantum barrier. At least one of positive interfacial polarization charges (δ + ) present in the
That is, as shown in FIG. 6A, when the
However, an acceptor impurity (A) such as Mg is formed at the interface between the
In this case, the acceptor impurity (A) may be a Group 2 element such as Mg, and may offset the total of the positive interfacial polarization charge (δ + ) density from 0.5 to the positive interfacial polarization charge (δ + ) density. Can be doped to any density.
In the nitride semiconductor light emitting device according to the third embodiment of the present invention, the interfacial polarization charge existing between the
Preferred embodiments of the present invention described above are disclosed for the purpose of illustration, and various substitutions, modifications, and changes within the scope without departing from the spirit of the present invention for those skilled in the art to which the present invention pertains. It will be possible, but such substitutions, changes and the like should be regarded as belonging to the following claims.
110: substrate
120: n-type nitride semiconductor layer
130: active layer
131: quantum barrier layer
132: quantum well layer
140: p-type nitride semiconductor layer
150: electronic blocking layer
160: n-type electrode
170: p-type electrode
D: donor impurities
A: acceptor impurity
Claims (20)
At least one of a plurality of quantum barrier layers and quantum well layers alternately stacked on the n-type nitride semiconductor layer and having a negative interface polarization charge among the quantum barrier layers adjacent to the quantum well layer; An active layer delta-doped with donor impurities at an interface of the quantum barrier layer; And
A p-type nitride semiconductor layer formed on the active layer;
Nitride semiconductor light emitting device comprising a.
The donor impurity is a nitride semiconductor light emitting device, characterized in that the element.
The group IV element includes any one of Si, Ge, and Sn.
The donor impurity is nitride semiconductor light emitting device, characterized in that doped to a density capable of canceling the whole of the negative interface polarization charge density of the negative interface polarization charge density.
And an electron blocking layer formed between the quantum barrier layer disposed at the top of the quantum barrier layer of the active layer and the p-type nitride semiconductor layer.
A nitride semiconductor light emitting device according to claim 1, wherein acceptor impurities are delta doped at an interface between the electron blocking layer and the quantum barrier layer.
And the acceptor impurity is a Group 2 element.
The group 2 element is nitride semiconductor light emitting device, characterized in that containing Mg.
And an acceptor impurity delta-doped at an interface between at least one quantum well layer having positive interfacial polarization charges in the quantum well layer adjacent to the quantum barrier layer.
And the acceptor impurity is a Group 2 element.
The group 2 element is nitride semiconductor light emitting device, characterized in that containing Mg.
The acceptor impurity is nitride semiconductor light emitting device, characterized in that the doped to a density capable of canceling the whole of the positive interfacial polarization charge density of the positive interfacial polarization charge density.
At least one of a plurality of quantum barrier layer and the quantum well layer formed on the n-type nitride semiconductor layer, and alternately stacked, the positive interfacial polarization charge of the quantum well layer adjacent to the quantum barrier layer An active layer having delta doped acceptor impurities at an interface of the quantum well layer; And
A p-type nitride semiconductor layer formed on the active layer;
Nitride semiconductor light emitting device comprising a.
And the acceptor impurity is a Group 2 element.
The group 2 element is nitride semiconductor light emitting device, characterized in that containing Mg.
The acceptor impurity is nitride semiconductor light emitting device, characterized in that the doped to a density capable of canceling the whole of the positive interfacial polarization charge density of the positive interfacial polarization charge density.
And an electron blocking layer formed between the quantum barrier layer disposed at the top of the quantum barrier layer of the active layer and the p-type nitride semiconductor layer.
A nitride semiconductor light emitting device according to claim 1, wherein acceptor impurities are delta doped at an interface between the electron blocking layer and the quantum barrier layer.
And the acceptor impurity is a Group 2 element.
The group 2 element is nitride semiconductor light emitting device, characterized in that containing Mg.
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WO2014003524A2 (en) * | 2012-06-29 | 2014-01-03 | 인텔렉추얼디스커버리 주식회사 | Semiconductor light-emitting device |
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WO2014003524A2 (en) * | 2012-06-29 | 2014-01-03 | 인텔렉추얼디스커버리 주식회사 | Semiconductor light-emitting device |
WO2014003524A3 (en) * | 2012-06-29 | 2014-02-20 | 인텔렉추얼디스커버리 주식회사 | Semiconductor light-emitting device |
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