KR20110105026A - Force or pressure sensor array using semi-conductor strain gauge, fabrication method thereof and measurement method therof - Google Patents

Abstract

The force or pressure sensor array of the present invention can be bent or stretched by the substrate itself is a polymer-based material, and silicon, which is a material of a semiconductor strain gauge, is easily broken and hard, but its thickness can be manufactured very thin to ensure mechanical flexibility. It has the effect of having flexibility and elasticity at the same time. To this end, in particular, a pair of polymers including a semiconductor strain gauge 110 formed between a film strain and a semiconductor strain gauge 110, which is formed in a predetermined array pattern and deformed by a force or pressure, face and face each other. Each of the film layers 120 and 130 and the pair of polymer film layers 120 and 130 is formed as an insulating layer and is formed on the upper and lower surfaces of the insulating layer, and is connected to each unit 111 of the array pattern to form an electrode. A circuit board 10 including a pair of signal line layers for drawing out a strain signal output by the strain of 111; And a pair of elastomer layers 20 and 30 formed on both sides of the circuit board 10 such that the circuit board 10 is included therein. The force using the semiconductor strain gauge 110 includes: A pressure sensor array is disclosed.

Description

FORCE OR PRESSURE SENSOR ARRAY USING SEMI-CONDUCTOR STRAIN GAUGE, FABRICATION METHOD THEREOF AND MEASUREMENT METHOD THEROF}

The present invention relates to a force or pressure sensor array using semiconductor strain gauges. More specifically, a method of manufacturing a force or pressure sensor array, a force or a pressure sensor array using a semiconductor strain gauge using a highly sensitive semiconductor strain gauge, and using a semiconductor film strain gauge comprising a polymer film layer and an elastomer layer having flexibility and stability. Or a force or pressure measurement method using a pressure sensor array.

When manufacturing a force or pressure sensor array, the strain gauge was conventionally constructed using a Ni / Cr or Cu / Ni metal layer, but this sensitivity is as high as the gauge factor is 50 to 100 times lower than that of the semiconductor strain gauge. There is a downside to falling.

Semiconductor strain gauges are manufactured by injecting impurities into monocrystalline or polycrystalline silicon, and the gauge factor is about 150, which makes it possible to sense highly sensitively. Applications to flexible and bendable force or pressure sensitive arrays have been limited.

On the other hand, force or pressure sensitive arrays of force or pressure-sensitive conductive rubber or ink have been used to create a force or pressure sensor array, which is a mixture made of a small conductive metal powder made of rubber or polymer as a base material and the base material deforms when subjected to force or pressure. Therefore, the gap between the metal powders in them is narrowed or contacted to create a path through which current flows, thus reducing the resistance. It can be manufactured inexpensively in large areas and is already widely used as a pressure distribution measuring material for medical and ergonomics. However, since it relies on the conduction of metal particles scattered in the base material, the repeatability and reproducibility are greatly reduced. There has been a limit.

The currently published force or pressure sensor arrays do not meet the required characteristics for applications such as tactile sensors for humanoid robot hand grips that require precise force or pressure control or tactile sensors for medical robotic surgery. Thus, there is a need for a new sensor array with robust structure and chemical stability that is flexible and stretchable to be able to attach to various curved surfaces while being able to measure force or pressure distribution quantitatively.

SUMMARY OF THE INVENTION The present invention has been made by the necessity as described above, and an object of the present invention is to use a semiconductor strain gauge having high sensitivity, linearity, repeatability, and reproducibility, while using a polymer material to simultaneously carry out flexibility, elasticity, and robustness. The present invention provides a method of manufacturing a force or pressure sensor array using a gauge, a force or pressure sensor array, and a method of measuring force or pressure using the force or pressure sensor array.

In addition, the object of the present invention is to pursue the performance of the silicon-based force sensor and at the same time has the flexibility and elasticity that the silicon-based sensor does not have the artificial skin (particularly, the finger of the robot finger requiring precise force measurement and control) It is to provide a force or pressure sensor array using a semiconductor strain gauge, which can be used in various ways, such as skin, a touch sensor, a tactile sensor, a manufacturing method of a force or pressure sensor array, and a force or pressure measuring method using a force or pressure sensor array. .

An object of the present invention as described above is a semiconductor strain gauge 110 is formed in a predetermined array pattern is deformed by force or pressure; A pair of polymer film layers 120 and 130 including a semiconductor strain gauge 110 between the film surfaces in contact with and in contact with each other; And a pair of polymer film layers 120 and 130 formed as an insulating layer and formed on upper and lower surfaces of the insulating layer and connected to each unit 111 in an array pattern to form an electrode, and outputted by deformation of each unit 111. A pair of signal lines including a pair of signal line layers for drawing out the transformed signal to the outside; a pair of elastic members formed on both sides of the circuit board 10 to include the circuit board 10 therein; It can be achieved by providing a force or pressure sensor array using a semiconductor strain gauge, characterized in that it further comprises a polymer layer (20, 30).

In addition, the pair of polymer film layers 120 and 130 are preferably a pair of polyimide thin film layers.

The semiconductor strain gauge 110 preferably has a resistance change based on force or pressure.

The strain signal is preferably output based on the resistance change.

Each unit 111 is rod-shaped, it is preferable that the array pattern is a pattern having the rod-shaped longitudinal direction the same.

There are two circuit boards 10, and each unit 111 corresponding to each circuit board 10 is overlapped so that two circuit boards 10 are bonded together.

It is preferable that the array pattern has uniformly spaced intervals between the units 111 arranged in the longitudinal direction and in a direction perpendicular to the longitudinal direction.

The pair of elastomer layers 20 and 30 has a plurality of protrusions 31 uniformly formed on the surface of any one of the elastomer layers 20 and 30, and the array pattern is formed by each protrusion 31 on the surface. It is preferable that the pattern is arranged to face in all directions below the boundary line.

The pair of signal line layers is preferably composed of a plurality of first signal lines 140 arranged in one direction on the lower surface of the insulating layer and a plurality of second signal lines 150 arranged perpendicularly in one direction on the upper surface of the insulating layer.

Preferably, the pair of signal line layers is formed by metal deposition.

It is preferable that the pair of elastomer layers 20 and 30 be a pair of poly-dimethylsiloxane layers.

It is preferable that the pair of elastomer layers 20 and 30 have the same thickness of each elastomer layer 20 and 30.

On the other hand, an object of the present invention as another category, a gauge manufacturing step (S1100) in which a semiconductor strain gauge 110 having a predetermined array pattern on a silicon wafer 40 is manufactured; The manufactured semiconductor strain gauge 110 is transferred to the first polymer film layer 120 stacked using the poly-dimethylsiloxane medium 50 with the sacrificial layer 62 interposed between the carrier wafers 60. The transfer step (S1200); Forming a first signal line 140 in which a plurality of first signal lines 140 are connected to one end of each unit 111 in an array pattern to form a first electrode (S1300); An insulating layer forming step of forming an insulating layer by stacking the second polymer film layer 130 on the plurality of first signal lines 140 (S1400); Forming a second signal line 150 in which a plurality of second signal lines 150 are connected to the other end of each unit 111 in the second polymer film layer 130 to form a second electrode (S1500); A substrate separation step (S1600) in which the circuit board 10 including the first and second polymer film layers, the semiconductor strain gauge 110, and the plurality of first and second signal lines is separated by dissolution of the sacrificial layer 62 by a predetermined solvent. ; And a substrate bonding step (S1700) in which the circuit board 10 is inserted and adhered between the pair of elastomer layers 20 and 30, thereby providing a method of manufacturing a force or pressure sensor array. have.

Gauge manufacturing step (S1100), the lithography process (S1110), ion implantation process (S1120) and etching process (S1130) is sequentially performed on the silicon wafer 40 is a step that the semiconductor strain gauge 110 is manufactured. desirable.

In the gauge manufacturing step (S1100), the semiconductor strain gauge 110 is preferably manufactured to have a thickness of 0.1 μm to 100 μm.

In the semiconductor strain gauge 110 transfer step (S1200), the sacrificial layer 62 is polymethyl methacrylate, and the first polymer film layer 120 is preferably a polyimide thin film layer.

In the first and second signal line forming steps S1300 and S1500, the first and second signal lines may be formed by metal deposition.

In the insulating layer forming step (S1400), the second polymer film layer 130 is preferably a polyimide thin film layer.

In the first and second signal line forming steps (S1300 and S1500), the plurality of first signal lines 140 are arranged in parallel in one direction, and the plurality of second signal lines 150 are formed in a direction perpendicular to one direction. Is preferably.

On the other hand, an object of the present invention is that the poly-dimethyl siloxane layer is adhered to the outer both sides of the pair of polymer film layer (120, 130) in contact with the film surface, so that at least one of the poly-dimethyl siloxane layer from the outside Receiving a force or pressure (S2100); A step in which a semiconductor strain gauge 110 having a predetermined array pattern is positioned between the pair of polymer film layers 120 and 130 to receive a force or pressure to change resistance (S2200); Receiving, by the controller, a predetermined signal output based on the changed resistance through a plurality of first and second signal lines connected to each unit 111 of the array pattern (S2300); Calculating, by the controller, the measured resistance value or the measured voltage value based on the signal (S2400); And a control unit outputting the strength of the force or the pressure based on the measured resistance value or the measured voltage value (S2500) to be achieved by providing a force or pressure measurement method using a force or pressure sensor array. Can be.

Between the operation step S2400 of the control unit and the output step S2500 of the control unit, the control unit reads an initial resistance value or an initial voltage value stored in the buffer memory corresponding to each unit 111 (S2450). It is preferable to include.

The output step (S2500) of the control unit, it is preferable that the control unit outputs the strength of the force or pressure by comparing the measured resistance value and the initial resistance value or by comparing the measured voltage value and the initial voltage value.

According to one embodiment as described above, first, the present invention is simple and robust sensor structure. That is, in general, a wide mambrane structure is adopted as a sensing unit of a sensor to increase the strain, in which a flexible polymer substrate itself takes its role and thus is physically robust. In addition, since the polymer is generally a chemically inert material, the sensor structure of the present invention is chemically stable.

Second, since the semiconductor strain gauge is manufactured by injecting impurities such as boron (B) into silicon to form a piezoresistor, the signal sensitivity is excellent. In addition, the repeatability and reproducibility are superior to the method using force sensitive resistors.

Third, the force sensor array of the present invention can have both flexibility and flexibility. The substrate itself can be bent and stretched with a polymer-based material, and silicon, which is a material of semiconductor strain gauges, is well broken and hard, but if its thickness is made very thin, mechanical flexibility can be secured, thereby providing flexibility and elasticity. .

1A is a perspective view of one embodiment of a force or pressure sensor array using the present invention strain gauge;
FIG. 1B is an exploded perspective view in which the force or pressure sensor array shown in FIG. 1A is decomposed into a layer configuration; FIG.
2 is a cross-sectional view showing a cross section in the AA direction of FIG. 1A;
3 is a flowchart sequentially showing an embodiment of a method of manufacturing a force or pressure sensor array using the present invention strain gauge;
4A through 4D are cross-sectional views sequentially illustrating a process of manufacturing a semiconductor strain gauge in one configuration of a force or pressure sensor array using the semiconductor strain gauge according to the present invention;
5 is a perspective view showing a state of transferring the semiconductor strain gauge in the manufacturing method of the force or pressure sensor array using the semiconductor strain gauge of the present invention,
6 is a perspective view showing a state in which a semiconductor strain gauge is transferred to a carrier wafer layer in a method of manufacturing a force or pressure sensor array using the semiconductor strain gauge according to the present invention;
7 is a perspective view illustrating a state in which a plurality of signal lines are arranged in a method of manufacturing a force or pressure sensor array using a semiconductor strain gauge according to the present invention;
8 is a flowchart sequentially showing a force or pressure measuring method using the present inventors force or pressure sensor array,
9 is a plan view briefly showing an array pattern in which rod-shaped units are cross-shaped as a first modification of the force or pressure sensor array using the semiconductor strain gauge according to the present invention;
10 is a plan view showing a state in which a protrusion structure is formed on the array pattern as a second modification of the force or pressure sensor array using the semiconductor strain gauge of the present invention;
FIG. 11 is a cross-sectional view illustrating a cross section taken along the BB direction in FIG. 10.

< Example >

Force or pressure sensor array

Figure 1a is a perspective view showing an embodiment of a force or pressure sensor array using the semiconductor strain gauge 110 of the present invention, Figure 1b is an exploded perspective view of the force or pressure sensor array shown in Figure 1a exploded in a layer configuration. As shown in FIGS. 1A and 1B, one embodiment of the present invention consists of a circuit board 10 and a pair of elastomer layers 20 and 30 bonded to both sides thereof. Here, the circuit board 10 includes a polymer film layer and a semiconductor strain gauge (semicondutor strain guage) in which a plurality of units 111 are arranged in a specific array pattern, and a plurality of first, Two signal lines 140 and 150 are formed.

A semiconductor strain gauge having an array pattern of a plurality of units 111 serves to sense a force or pressure with excellent sensitivity of a high gauge factor based on a change in resistance according to deformation. In addition, even if the entire sensor array is bent at the neutral axis in the entire layer structure, the strain is zero.

Each unit 111 constituting the semiconductor strain gauge is provided in plural and manufactured to have an array pattern, and each unit 111 has a bar shape or a bar shape. The array pattern is arranged so that the lengths of the rod shapes are all the same, so that the force or pressure sensing by the large area can be made uniform. Each unit 111 has a wave shape unlike the drawing to provide elasticity. It may also be prepared.

Since each unit 111 is manufactured on the basis of a silicon wafer, it is manufactured to a thickness of 100 μm or less in order to provide warpage. The manufacturing process will be described later with reference to FIGS. 4A to 4D.

A semiconductor strain gauge in which a plurality of units 111 are arranged in an array pattern is formed in a polymer film layer such as polyimide (PI). Since the polymer film layer is also used as an inter-electrode insulating layer, it is preferable that the circuit board 10 be completed with at least two thin films. Such a polymer film layer will be described later with reference to FIG. 2.

The pair of elastomer layers 20 and 30 serve as a sensing part and a protective film for initially detecting the force F in the present invention. The pair of elastomer layers 20, 30 are made of the same thickness (about 0.5-10 mm) on both sides to ensure uniformity of force or pressure sensing.

In addition, the elastomer layers 20 and 30 (or the polymer layer) are used to provide flexibility and elasticity. In this embodiment, the elastomer layers 20 and 30 (or the polymer layer) are formed of a poly-dimethylsiloxane (PDMS) layer.

As shown in FIG. 1A, when the external force F acts on the upper elastomer layer 30, the unit 111 of the corresponding portion of the semiconductor strain gauge is deformed, If there is a resistance change on the basis, a predetermined signal is output through the plurality of first and second signal lines 140 and 150 to measure the force or pressure applied to the sensor of the present invention.

FIG. 2 is a cross-sectional view of the A-A direction cross section of FIG. 1A. FIG. As shown in FIG. 2, in the circuit board 10 of the present invention, the semiconductor strain gauge 110 is arranged on the first polymer film layer 120, and the first signal line corresponds to one end of each unit 111. 140 is connected, and the second signal line 150 is connected to correspond to the other end of each unit 111. The elastomer layers 20 and 30 are bonded to the upper and lower surfaces of the circuit board 10. Since the elastomer layers 20 and 30 have been described above in the description of FIG. 1, the configuration of the circuit board 10 will be described here.

The semiconductor strain gauge 110 may be manufactured in various array patterns, but the thickness of the semiconductor strain gauge 110 should be 100 μm or less in order to impart warpage, and the plurality of first and second signal lines 140 and 150 for electrode formation are described above. In the case of using a metal such as Au / Ti can be formed by a patterning process and metal evaporation (metal evaporation).

However, since the first signal line 140 and the second signal line 150 must be insulated from each other, a second polymer film layer 130 is further formed between the first signal line 140 and the second signal line 150 as an insulating layer. The semiconductor strain gauge 110 and the second signal line 150 may be connected through the hole.

In the case of the circuit board 10 as in the present embodiment, the plurality of second signal lines 150 may be exposed on the second polymer film layer 130, but the polymer film layer is again on the plurality of second signal lines 150. By further forming (not shown), the circuit board 10 may be formed in a structure in which the polymer film layer is wrapped on both sides.

Meanwhile, the first and second polymer film layers 120 and 130 are required to configure circuits and wires, and also serve to allow the semiconductor strain gauge 110 to be deposited on the film. The first and second polymer film layers 120 and 130 may each be formed of a polyimide (PI) thin film layer having a thickness of 0.5 to 5 μm.

<Method of manufacturing force or pressure sensor array>

3 is a flowchart sequentially showing an embodiment of a method of manufacturing a force or pressure sensor array using the semiconductor strain gauge 110 of the present invention. Referring to FIG. 3, first, a semiconductor strain gauge 110 having a predetermined array pattern is manufactured on a silicon wafer 40 (S1100).

The semiconductor strain gauge 110 is manufactured using a silicon-on-insulator (SOI) wafer or a single crystal silicon wafer so that the thickness of each unit 111 of the array pattern is 0.1 μm to 100 μm, and in particular, an SOI wafer is used. In this case, since the etching film is inserted, the thickness of the semiconductor strain gauge 110 may be easily adjusted.

Next, the first semiconductor film layer 120 in which the manufactured semiconductor strain gauge 110 is laminated with the sacrificial layer 62 on the carrier wafer 60 by using the poly-dimethylsiloxane medium 50. It is transferred to (S1200).

In particular, in the semiconductor strain gauge 110 transfer step (S1200), the sacrificial layer 62 is polymethyl methacrylate, that is, polymethyl methacrylate (PMMA), and the first polymer film layer 120 is poly The transfer step (S1200) process is performed using the mid thin film layer.

Next, a plurality of first signal lines 140 are connected to one end of each unit 111 of the array pattern to form a first electrode (S1300). Here, the plurality of first and second signal lines are formed by metal deposition, and the plurality of first signal lines 140 are formed to be arranged in parallel in one direction.

Next, the second polymer film layer 130 is stacked on the plurality of first signal lines 140 to form an insulating layer (S1400). In particular, in the insulating layer forming step (S1400), the polyimide thin film layer is used as the second polymer film layer 130 as in the first polymer film layer 120.

Next, a plurality of second signal lines 150 are connected to the other end of each unit 111 in the second polymer film layer 130 to form a second electrode (S1500). In addition, the plurality of second signal lines 150 may also be formed by metal deposition, and the plurality of second signal lines 150 may be formed to be perpendicular to the direction in which the plurality of first signal lines 140 are arranged.

Next, the circuit board 10 including the first and second polymer film layers, the semiconductor strain gauge 110, and the plurality of first and second signal lines is separated by dissolution of the sacrificial layer 62 by a predetermined solvent (S1600).

Finally, the circuit board 10 is inserted into and bonded between the pair of elastomer layers 20 and 30 (S1700) to perform the method of manufacturing a force or pressure sensor array of the present invention.

On the other hand, the gauge manufacturing step (S1100), the lithography printing process (S1110), ion implantation process (S1120) and etching process (S1130) is sequentially performed on the silicon wafer 40 semiconductor strain gauge 110 of the intended array pattern ) Can be prepared. Since these processes (S1110, S1120, S1130) is a obvious process for manufacturing a semiconductor strain gauge, description thereof will be omitted.

There may be various manufacturing processes in addition to the general semiconductor strain gauge 110 manufacturing process (S1110, S1120, S1130) as described above, but the microstructure extraction method using a single crystal silicon wafer as a low cost process [Reference: A.J. Baca, et al., Adv. Func. Mater., 17, 3051 (2007) may be used to fabricate the semiconductor strain gauge 110 (FIGS. 4A-4D).

4A to 4D are process cross-sectional views sequentially illustrating a process of manufacturing the semiconductor strain gauge 110 during the construction of a force or pressure sensor array using the semiconductor strain gauge 110 according to the present invention.

As shown in FIG. 4A, the photoresist 113 is applied to the single crystal silicon 112 in a predetermined pattern in consideration of the semiconductor strain gauge 110 to be manufactured. Subsequently, the corresponding region is removed through metal evaporation and a trench 114 is formed through reactive ion etching (RIE) to undergo sidewall refining by KOH, as shown in FIG. 4D. Monocrystalline silicon is completed.

Thereafter, as shown in FIG. 4C, the first passivation layer 115 and the second passivation layer 116 are sequentially formed, but the first passivation layer 115 uses Si ₃ N ₄ / SiO ₂ and the second passivation layer 116. ) Uses Au / Ti. Next, when the first and second passivation layers 115 and 116 are partially removed through the RIE process and the KOH etching process using CF4 plasma, and finally the first and second passivation layers 115 and 116 are completely removed, as shown in FIG. 4D. As described above, the semiconductor strain gauge 110 having the ribbon-shaped unit 111 having an array pattern is completed.

5 is a perspective view illustrating a state in which the semiconductor strain gauge 110 is transferred in a method of manufacturing a force or pressure sensor array using the semiconductor strain gauge 110 according to the present invention. As shown in FIG. 5, the semiconductor strain gauge 110 having the array pattern using the poly-dimethylsiloxane medium (or PDMS stamp, 50) is formed by the silicon wafer (the area of the poly-dimethylsiloxane medium 50). In 40).

6 is a perspective view illustrating a state in which a semiconductor strain gauge 110 is transferred to a carrier wafer 60 layer in a method of manufacturing a force or pressure sensor array using the semiconductor strain gauge 110 according to the present invention. As illustrated in FIG. 6, the semiconductor strain gauge 110 is transferred and stacked on the first polymer film layer 120 stacked on the carrier wafer 60 with the sacrificial layer 62 interposed therebetween. Here, the first polymer film layer 120 is formed of a polyimide thin film layer, the sacrificial layer 62 is coated with polymethyl acrylate (PMMA, acrylic resin).

FIG. 7 is a perspective view illustrating a state in which a plurality of signal lines are arranged in a method of manufacturing a force or pressure sensor array using the semiconductor strain gauge 110 according to the present invention. As shown in FIG. 7, a plurality of first and second signal lines 140 and 150 may be formed by depositing metal (Cu / Au, etc.), in which detailed wire patterning may be performed and a process such as spin coating may be performed. This can be done. The plurality of first and second signal lines 140 and 150 are formed to be arbitrary X-axis electrodes and Y-axis electrodes perpendicular thereto.

<Measuring force or pressure>

8 is a flow chart sequentially showing a force or pressure measuring method using the present force or pressure sensor array. As shown in FIG. 8, first, a poly-dimethylsiloxane layer is adhered to the outer both sides of a pair of polymer film layers 120 and 130 facing and facing the film surface, so that at least one of the poly-dimethylsiloxane layers Receives a force or pressure from the outside (S2100).

Next, a semiconductor strain gauge 110 having a predetermined array pattern is positioned between the pair of polymer film layers 120 and 130 to receive a force or pressure to change resistance (S2200).

Next, the controller (not shown) receives a predetermined signal output based on the changed resistance through a plurality of first and second signal lines connected to each unit 111 of the array pattern (S2300). Here, the control unit may be a computer capable of numerical operation and numerical comparison, it is preferable to have an input port for receiving a signal of the force or pressure sensor array of the present invention.

Next, the controller calculates the measured resistance value or the measured voltage value based on the signal (S2400).

Finally, the control unit outputs the strength of the force or pressure based on the measured resistance value or the measured voltage value (S2500), thereby performing a force or pressure measurement method using the force or pressure sensor array.

Here, between the operation step S2400 of the control unit and the output step S2500 of the control unit, the control unit reads the initial resistance value or the initial voltage value stored in the buffer memory (not shown) corresponding to each unit 111. Step S2450 may be further included to compare the measured value with the initial value and to calculate and output the strength of the force or the pressure based on the proportionality thereof.

<Order of force or pressure sensor array 1 variant >

FIG. 9 is a plan view briefly illustrating an array pattern in which rod-shaped units 111 are arranged in a cross shape as a first modification of the force or pressure sensor array using the semiconductor strain gauge 110 according to the present invention. In the first modified example as shown in FIG. 9, two circuit boards 10 having a plurality of rod-shaped (or bar-shaped) units 111 and 111 ′ described above are arranged in an array pattern. The unit bodies 111 and 111 ′ corresponding to the circuit boards 10 may be overlapped to form a cross shape. Of course, by bonding the elastomer layer to the outer surface of the two overlapping circuit boards 10, the force or pressure sensor array of the present invention is completed.

<Order of force or pressure sensor array 2 variants >

FIG. 10 is a plan view illustrating a state in which the protrusion 31 is formed on the array pattern as a second modified example of the force or pressure sensor array using the semiconductor strain gauge 110 of the present invention, and FIG. 11 is a BB direction of FIG. 10. It is sectional drawing which shows the cross section of.

As shown in FIGS. 10 and 11, semiconductor strain gauges 110a, 110b, 110c, 110d having patterns arranged in an array pattern so that each protrusion 31 faces in all directions below the boundary line formed with the surface of the elastomer 30. ) Is formed. The protrusion 31 is a structure that allows the load to be concentrated and at the same time measure the force or pressure in the three-axis direction.

The first and second variants described above may also be manufactured by the same manufacturing method as the above-described manufacturing method, and the measuring method of force or pressure is also performed in the same manner except for the measuring direction.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is indicated by the appended claims rather than the detailed description above. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

10: circuit board
20, 30: pair of elastomer layers
31: turning
40: silicon wafer
50: poly-dimethylsiloxane mediator
60: carrier wafer
62: sacrificial layer
110: semiconductor strain gauge
111, 111 ', 111a, 111b, 111c, 111d: unit of semiconductor strain gauge
112: single crystal silicon
113: photo register
114: trench
115: first shield
116: second protective shield
120: first polymer film layer
130: second polymer film layer
140: first signal line
150: second signal line

Claims (22)

A semiconductor strain gauge 110 formed in a predetermined array pattern and deformed by force or pressure;
A pair of polymer film layers (120, 130) including the semiconductor strain gauge (110) between the film surfaces facing each other and in contact with the film surfaces; And
One of the pair of polymer film layers 120 and 130 is formed as an insulating layer and is formed on upper and lower surfaces of the insulating layer and is connected to each unit 111 of the array pattern to form an electrode. Including a circuit board (10) consisting of;
The semiconductor strain gauge 110 further comprises a pair of elastomer layers 20 and 30 formed on both sides of the circuit board 10 so that the circuit board 10 is included therein. Force or pressure sensor array.
The method of claim 1,
The pair of polymer film layers (120, 130) is a force or pressure sensor array using a semiconductor strain gauge (110), characterized in that a pair of polyimide thin film layer.
The method of claim 1,
The semiconductor strain gauge (110) is a force or pressure sensor array using a semiconductor strain gauge (110), characterized in that the resistance change based on the force or the pressure.
The method of claim 3,
The strain signal is a force or pressure sensor array using a semiconductor strain gauge (110), characterized in that output based on the resistance change.
The method of claim 1,
Each unit 111 has a rod shape,
The array pattern is a force or pressure sensor array using a semiconductor strain gauge (110), characterized in that the pattern having the same longitudinal direction of the rod shape.
6. The method of claim 5,
The semiconductor strain gauge 110 is characterized in that the two circuit boards 10 are overlapped so that each unit 111 corresponding to each of the circuit boards 10 crosses each other and the two circuit boards 10 are bonded together. ) Force or pressure sensor array.
6. The method of claim 5,
The array pattern is a force or pressure sensor array using a semiconductor strain gauge (110) characterized in that it has a uniform distance between the longitudinal direction and the adjacent unit of each unit (111) arranged in a direction perpendicular to the longitudinal direction.
The method of claim 1,
The pair of elastomer layers 20 and 30 are uniformly formed with a plurality of protrusions 31 on the surface of any one of the elastomer layers 20 and 30,
The array pattern is a force or pressure sensor array using a semiconductor strain gauge (110), characterized in that the pattern is arranged so that each of the projections (31) facing all the way below the boundary line forming the surface.
The method of claim 1,
The pair of signal line layers includes a plurality of first signal lines 140 arranged in one direction on a lower surface of the insulating layer and a plurality of second signal lines 150 arranged perpendicularly to the one direction on an upper surface of the insulating layer. A force or pressure sensor array using a semiconductor strain gauge 110.
The method of claim 1,
The pair of signal line layers is a force or pressure sensor array using a semiconductor strain gauge (110), characterized in that formed by metal deposition.
The method of claim 1,
The pair of elastomer layers (20, 30) is a force or pressure sensor array using a semiconductor strain gauge (110), characterized in that a pair of poly-dimethylsiloxane layer.
The method of claim 1,
The pair of elastomer layers (20, 30) is a force or pressure sensor array using a semiconductor strain gauge (110), characterized in that the thickness of each elastomer layer (20, 30) is the same.
A gauge manufacturing step (S1100) in which a semiconductor strain gauge 110 having a predetermined array pattern is manufactured on the silicon wafer 40;
The prepared semiconductor strain gauge 110 is a first polymer film layer 120 laminated with a sacrificial layer 62 on a carrier wafer 60 by using a poly-dimethylsiloxane medium 50. A transfer step (S1200) to be transferred;
Forming a first signal line 140 in which a plurality of first signal lines 140 are connected to one end of each unit 111 of the array pattern to form a first electrode (S1300);
An insulating layer forming step (S1400) in which an insulating layer is formed by stacking a second polymer film layer 130 on the plurality of first signal lines 140;
Forming a second signal line 150 in which a plurality of second signal lines 150 are connected to the other end of each unit 111 in the second polymer film layer 130 to form a second electrode (S1500);
Separating substrate wherein the circuit board 10 composed of the first and second polymer film layers, the semiconductor strain gauge 110 and the plurality of first and second signal lines is separated by dissolution of the sacrificial layer 62 by a predetermined solvent. Step S1600; And
And a substrate bonding step (S1700) in which the circuit board (10) is inserted and bonded between a pair of elastomer layers (20, 30). 2.
The method of claim 13,
The gauge manufacturing step (S1100),
Lithography printing process (S1110), ion implantation process (S1120) and etching process (S1130) is sequentially performed on the silicon wafer 40, the force or pressure, characterized in that the step of manufacturing the semiconductor strain gauge 110 Method of manufacturing a sensor array.
The method of claim 13,
In the gauge manufacturing step (S1100), the semiconductor strain gauge (110) is a method of manufacturing a force or pressure sensor array, characterized in that the thickness is manufactured to 0.1 ㎛ ~ 100 ㎛.
The method of claim 13,
In the semiconductor strain gauge 110 transfer step (S1200), the sacrificial layer 62 is polymethyl methacrylate, the first polymer film layer 120 is a force or pressure sensor, characterized in that the polyimide thin film layer Method of making an array.
The method of claim 13,
The first and second signal line forming step (S1300, S1500),
And the plurality of first and second signal lines are formed by metal deposition.
The method of claim 13,
In the insulating layer forming step (S1400), the second polymer film layer 130 is a method of manufacturing a force or pressure sensor array, characterized in that the polyimide thin film layer.
The method of claim 13,
The first and second signal line forming step (S1300, S1500),
The plurality of first signal lines 140 are arranged in parallel in one direction, wherein the plurality of second signal lines 150 are formed so as to be perpendicular to the one direction of the force or pressure sensor array, characterized in that Manufacturing method.
The poly-dimethyl siloxane layer is bonded to the outer both sides of the pair of polymer film layer (120, 130) in contact with the film surface facing each other so that at least one of the poly-dimethyl siloxane layer receives a force or pressure from the outside (S2100);
Placing a semiconductor strain gauge (110) having a predetermined array pattern between the pair of polymer film layers (120, 130) so that the resistance is changed by receiving the force or the pressure (S2200);
Receiving, by the control unit, a predetermined signal output based on the changed resistance through a plurality of first and second signal lines connected to each unit 111 of the array pattern (S2300);
Calculating, by the controller, a measurement resistance value or a measurement voltage value based on the signal (S2400); And
The control unit outputs the strength of the force or the pressure based on the measured resistance value or the measured voltage value (S2500); Force or pressure measurement method using a force or pressure sensor array comprising a.
The method of claim 20,
Between the operation step (S2400) and the output step (S2500) of the control unit,
The control unit further includes a step of reading an initial resistance value or an initial voltage value stored in a buffer memory corresponding to each unit 111 (S2450). How to measure.
The method of claim 20,
The output step (S2500) of the control unit,
Using the force or pressure sensor array, wherein the control unit compares the measured resistance value with the initial resistance value or compares the measured voltage value with the initial voltage value and outputs the strength of the force or the pressure. Force or pressure measurement method.

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