KR20110103229A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
KR20110103229A
KR20110103229A KR1020100022453A KR20100022453A KR20110103229A KR 20110103229 A KR20110103229 A KR 20110103229A KR 1020100022453 A KR1020100022453 A KR 1020100022453A KR 20100022453 A KR20100022453 A KR 20100022453A KR 20110103229 A KR20110103229 A KR 20110103229A
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KR
South Korea
Prior art keywords
layer
light emitting
emitting device
semiconductor layer
semiconductor light
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Application number
KR1020100022453A
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Korean (ko)
Inventor
고형덕
손철수
정훈재
Original Assignee
삼성엘이디 주식회사
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Priority to KR1020100022453A priority Critical patent/KR20110103229A/en
Publication of KR20110103229A publication Critical patent/KR20110103229A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The present invention relates to a semiconductor light emitting device, comprising: a first conductive semiconductor layer; A nanorod formed on the first conductive semiconductor layer; An active layer formed to cover the nanorods; a second conductive semiconductor layer formed to cover the active layer; And a plasmon generating layer having a metal material formed to cover at least a part of the surface of the second conductivity type semiconductor layer, wherein the surface plasmon of the metal material causes resonance with light emitted from the active layer. to provide.

Description

Semiconductor Light Emitting Device

The present invention relates to a semiconductor light emitting device, and more particularly, to a semiconductor light emitting device that can improve the luminous efficiency by using surface plasmon resonance.

In general, semiconductors have been widely used in green or blue light emitting diodes (LEDs) or laser diodes (LDs), which are provided as light sources for full color displays, image scanners, various signal systems and optical communication devices. . Such a semiconductor light emitting device can be provided as a light emitting device having an active layer emitting a variety of light, including blue and green using the recombination principle of electrons and holes.

After such a semiconductor light emitting device has been developed, many technical developments have been made, and the range of its use has been expanded, and thus, many studies have been conducted as general lighting and electric light sources. In particular, the conventional semiconductor light emitting device has been mainly used as a component that is applied to a low current / low power mobile products, and recently the application range is gradually extended to the high current / high power field.

One object of the present invention is to provide a semiconductor light emitting device having improved internal quantum efficiency.

In order to achieve the above object, an aspect of the present invention,

A first conductivity type semiconductor layer; A nanorod formed on the first conductive semiconductor layer;

An active layer formed to cover the nanorods; A second conductivity type semiconductor layer formed to cover the active layer; And a plasmon generating layer having a metal material formed to cover at least a part of the surface of the second conductivity type semiconductor layer so that the surface plasmon of the metal material resonates with light emitted from the active layer; It provides a semiconductor light emitting device comprising a.

In one embodiment of the present invention, the nanorods may be formed of the same material extending from the first conductive semiconductor layer.

In one embodiment of the present invention, the second conductive semiconductor layer may be formed in a range that does not contact the first conductive semiconductor layer.

In one embodiment of the present invention, the plasmon generating layer may be formed to cover the top and side surfaces of the second conductivity-type semiconductor layer.

In one embodiment of the present invention, the plasmon generating layer may be composed of a plurality of metal nanoparticles and a transparent electrode.

In one embodiment of the present invention, the metal nanoparticles may be attached to the surface of the second conductivity-type semiconductor layer.

In one embodiment of the present invention, the metal nanoparticles may be made of one or more metals selected from the group consisting of Ag, Au, Al, Ni, Ti and Pt.

In one embodiment of the present invention, the particle diameter of the metal nanoparticles may range from 10 to 150 nm.

In one embodiment of the present invention, it may further include a dielectric layer formed on the first conductivity-type semiconductor layer, having a through hole in which the nanorods are located.

In one embodiment of the present invention, the dielectric layer may be made of silicon oxide or silicon nitride.

In one embodiment of the present invention, a plasmon generating layer may be formed on the upper surface of the dielectric layer.

In one embodiment of the present invention, the plasmon generating layer may include an insulator to fill the gap between the nanorods formed.

In one embodiment of the present invention, the plasmon generating layer may have a distance of 10 to 100nm from the active layer.

In one embodiment of the present invention, it may include a first conductivity type electrode to be electrically connected to the first conductivity type semiconductor layer.

In one embodiment of the present invention, a plurality of nanorods may be provided.

In one embodiment of the present invention, the active layer may be formed to cover the top and side surfaces of the nanorods.

In one embodiment of the present invention, the second conductivity type semiconductor layer may be formed to cover the top and side surfaces of the active layer.

According to the present invention, the luminous efficiency can be improved by the plasmon generating layer formed within a distance that can cause surface plasmon resonance from the active layer. As a result, the internal quantum efficiency can be improved and the light extraction efficiency can be improved, thereby improving the luminous efficiency.

1 is a perspective view showing a semiconductor light emitting device according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view taken along the line AA ′ of FIG. 1.
3 is a cross-sectional view of a semiconductor light emitting device according to another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity, and the elements denoted by the same reference numerals in the drawings are the same elements.

1 is a perspective view illustrating a semiconductor light emitting device according to an exemplary embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view taken along line AA ′ of FIG. 1. Referring to FIG. 2, the semiconductor light emitting device 100 according to the present embodiment is connected to the first conductive semiconductor layer 120 on the first conductive semiconductor layer 120 to form a nanorod 120 formed in a vertical direction. ') Is present, and an active layer 130 formed to cover the top and side surfaces of the nanorods 120' is formed. A second conductive semiconductor layer 140 formed in a range not in contact with the first conductive semiconductor layer 120 is formed to cover the top and side surfaces of the active layer 130, and the second conductive semiconductor layer surface is formed. The plasmon generating layer 150 is formed. The plasmon generating layer 150 includes a metal material formed to cover at least a part of the surface of the second conductive semiconductor layer 140 so that the surface plasmon of the metal material resonates with light emitted from the active layer 130. Can cause.

In the present embodiment, the first and second conductivity-type semiconductor layers 120 and 140 may be n-type and p-type semiconductor layers, respectively, and may be formed of a nitride semiconductor. Thus, the present invention is not limited thereto, but in the present embodiment, the first and second conductivity types may be understood to mean n-type and p-type, respectively. The first and second conductivity-type semiconductor layers 120 and 140 have an Al x In y Ga (1-xy) N composition formula, where 0 = x = 1, 0 = y = 1, 0 = x + y = 1 ), For example, GaN, AlGaN, InGaN, and the like may correspond to this. Si, Ge, Se, Te, etc. may be used as the n-type impurity, and Mg, Zn, Be, etc. may be used as the p-type impurity. In the case of n-type and p-type semiconductor layers, they may be grown by MOCVD, MBE, HVPE processes, and the like known in the art.

The active layer 130 formed between the first and second conductivity-type semiconductor layers 120 and 140 emits light having a predetermined energy by recombination of electrons and holes, and the active layer 130 is formed as in the present embodiment. Although it may be a layer made of a single material such as InGaN, alternatively, a quantum barrier layer and a quantum well layer may be provided with a multi-quantum well (MQW) structure alternately arranged, for example, each may be formed of GaN and InGaN. have.

The substrate 110 is for growth of semiconductor single crystals, in particular, nitride single crystals, and includes sapphire, Si, ZnO, GaAs, SiC, MgAl 2 O 4 , MgO, LiAlO 2 , LiGaO 2 , A substrate made of a material such as GaN can be used. In this case, the sapphire is a Hexa-Rhombo R3c symmetric crystal and the lattice constants of c-axis and a-direction are 13.001 13. and 4.758Å, respectively, C (0001) plane, A (1120) plane, R 1102 surface and the like. In this case, since the C surface is relatively easy to grow a nitride thin film and stable at high temperature, it is mainly used as a substrate for growing a nitride semiconductor.

Since the plasmon generation layer 150 may be used as the second conductivity type electrode, the plasmon generation layer 150 electrically connected to the first conductivity type semiconductor layer 120 is separated from the second conductivity type semiconductor layer 140. The dielectric layer 160 may be further included. The dielectric layer 160 may be formed to have a nano-sized through hole on the first conductivity type semiconductor layer 120. The dielectric layer 160 prevents the first conductive semiconductor layer 120 and the second conductive semiconductor layer 140 from contacting each other. In view of such a function, the dielectric layer 160 may be formed using silicon oxide or silicon nitride. Can be formed.

In the present embodiment, the plasmon generating layer 150 may be composed of a plurality of metal nanoparticles 150b and a transparent electrode 150a. Here, the metal nanoparticles are materials suitable for utilizing surface plasmon phenomenon, and may be formed of an external magnetic pole. By means of easy emission of electrons, metals having a negative dielectric constant may be mainly used, and may be made of one or more metals selected from the group consisting of Ag, Au, Al, Ni, Ti, and Pt. In addition, the alloy of the above metals may also be used as the metal nanoparticles (150b), the metal nanoparticles (150b) may have a particle size in the range of 10 to 150 nm. The transparent electrode 150a may be made of ITO, IZO, ZnO, or the like.

The plasmon generating layer 150 may be formed to have a distance which may cause surface plasmon resonance by light emitted from the active layer 130, that is, a distance within 10 to 100 nm from the active layer 130.

Here, in detail, the surface plasmon is a collective charge density oscillation of electrons occurring on the surface of the metal thin film, and the surface plasmon waves generated by the surface plasmons are surface electromagnetic waves traveling along the interface between the metal and the dielectric. On the other hand, as a photo-electron effect that occurs in metals such as gold (Au) and silver (Ag), when light of a specific wavelength is irradiated onto the metal, a resonance phenomenon occurs in which most of the light energy is transferred to free electrons. As a result, the phenomenon that occurs when surface electromagnetic waves occur is called Surface Plasmon Resonance. The conditions for the surface plasmon resonance to occur is the wavelength of the incident light, the refractive index of the material in contact with the metal, and the like, in particular, the distance between the active layer and the metal nanoparticles is very important. That is, surface plasmon resonance may occur when the distance between the active layer and the metal nanoparticles is less than or equal to a predetermined distance. In the present embodiment, the distance between the active layer 130 and the plasmon generating layer 150 having the metal nanoparticles 150b is present. Corresponds to this, and specifically, it is preferable that it is 10 to 100 nm. The lower limit of the distance is set to 10 nm because most of the light incident on the plasmon generating layer may be lost in the form of heat when the distance from the active layer 130 to the plasmon generating layer is too close. .

As in the present embodiment, when the active layer 130 and the second conductivity-type semiconductor layer 140 are formed on the surface of the nanorod 120 ′ connected from the first conductivity-type semiconductor layer 120 in the vertical direction, the plasmon A second conductivity type semiconductor layer 140 having a thickness in the range for resonance can be obtained. That is, in the nanorod 120 'core shell structure, since the thickness of the second conductivity-type semiconductor layer 140 may be formed to be 50 nm or less due to its structural characteristics, it is suitable for applying plasmon characteristics. In addition, as in the present exemplary embodiment, the plurality of nanorods 120 ′ may be provided on the first conductivity-type semiconductor layer 120.

In addition, the first conductivity type electrode 120a is formed on the upper surface of the first conductivity type semiconductor layer 120 exposed as a portion of the second conductivity type semiconductor layer 140 and the active layer 130 is removed by mesa etching. Can be. In addition, the exposed top surface of the plasmon generating layer 150 may be used as the second conductivity type electrode.

Although not shown, the nitride semiconductor light emitting device 100 may further include a buffer layer for alleviating lattice mismatch between the substrate 110 and the n-type nitride semiconductor layer 120. This buffer layer may be a low temperature nucleus growth layer including AlN or GaN.

As described above, the present invention does not require high precision nano patterning to form the plasmon generating layer 150, so that there is no fear that the semiconductor layer due to the nano patterning is damaged. In addition, by forming the metal nanoparticles 150b on the second conductivity-type semiconductor layer 140 and covering them with the transparent electrode 150a, the metal nanoparticles may be prevented from being damaged by a subsequent high temperature process. Therefore, since the nitride semiconductor light emitting device 100 according to the present embodiment includes the plasmon generating layer 150 formed on the surface of the second conductivity-type semiconductor layer 140, the inside according to the light extraction efficiency and the surface plasmon resonance The quantum efficiency is improved, and the luminous efficiency of the device can be improved.

According to the present embodiment, the metal nanoparticles 150b constituting the plasmon generating layer 150 may include the second conductive semiconductor layer 140, the second conductive semiconductor layer 140, and the first conductive semiconductor layer 120. ) May be formed on the surface of the dielectric layer 160 to electrically separate the metal nanoparticles, and the metal nanoparticles 150b may be formed to cover the transparent electrode 150a. In addition, the insulator 170 may be further included to fill the gap between the nanorods 120 ′ on which the plasmon generating layer 150 is formed. The insulator 170 may be formed at a height lower than that of the plasmon generation layer 150 as in the present embodiment, but may also be formed at the same height as the plasmon generation layer 150.

3 is a cross-sectional view showing another embodiment according to the present invention. According to the present embodiment, unlike the embodiment of FIG. 2, the metal nanoparticles 150b constituting the plasmon generation layer 150 may have a shape in which they are randomly dispersed in the transparent electrode 150a.

The present invention is not limited by the above-described embodiment and the accompanying drawings, but by the appended claims. Therefore, it will be apparent to those skilled in the art that various forms of substitution, modification, and alteration are possible without departing from the technical spirit of the present invention described in the claims, and the appended claims. Will belong to the technical spirit described in.

100 semiconductor light emitting element 110 substrate
120: first conductive semiconductor layer 130: active layer
140: second conductive semiconductor layer 150: plasmon generating layer
150a: transparent electrode 150b: metal nanoparticles
160: dielectric layer 170: insulator
120a: first conductivity type electrode

Claims (17)

A first conductive semiconductor layer;
A nanorod formed on the first conductive semiconductor layer;
An active layer formed to cover the nanorods;
A second conductivity type semiconductor layer formed to cover the active layer; And
A plasmon generating layer having a metal material formed to cover at least a part of the surface of the second conductive semiconductor layer so that the surface plasmon of the metal material causes resonance with light emitted from the active layer;
Semiconductor light emitting device comprising a.
The method of claim 1,
The nanorods are formed of the same material extending from the first conductive semiconductor layer.
The method of claim 1,
The second conductive semiconductor layer is formed in a range that does not contact with the first conductive semiconductor layer.
The method of claim 1,
The plasmon generating layer is a semiconductor light emitting device, characterized in that formed to cover the top and side surfaces of the second conductivity-type semiconductor layer.
The method of claim 1,
The plasmon generating layer is a semiconductor light emitting device, characterized in that consisting of a plurality of metal nanoparticles and a transparent electrode.
The method of claim 5,
The metal nanoparticles are attached to the surface of the second conductivity-type semiconductor layer, the semiconductor light emitting device.
The method of claim 5,
The metal nanoparticles are nitride semiconductor light emitting device, characterized in that made of at least one metal selected from the group consisting of Ag, Au, Al, Ni, Ti and Pt.
The method of claim 5,
The particle size of the metal nanoparticles is a nitride semiconductor light emitting device, characterized in that 10 to 150 nm range.
The method of claim 1,
And a dielectric layer formed on the first conductivity type semiconductor layer and having a through hole in which the nanorods are located.
10. The method of claim 9,
The dielectric layer is a semiconductor light emitting device, characterized in that made of silicon oxide or silicon nitride.
10. The method of claim 9,
And a plasmon generating layer is formed on an upper surface of the dielectric layer.
The method of claim 1,
And an insulator to fill the gap between the nanorods on which the plasmon generating layer is formed.
The method of claim 1,
The plasmon generating layer is a semiconductor light emitting device, characterized in that the distance from the active layer ranges from 10 to 100nm.
The method of claim 1,
And a first conductivity type electrode to be electrically connected to the first conductivity type semiconductor layer.
The method of claim 1,
A semiconductor light emitting device, characterized in that provided with a plurality of nanorods.
The method of claim 1,
The active layer is a semiconductor light emitting device, characterized in that formed to cover the top and side surfaces of the nanorods.
The method of claim 1,
The second conductive semiconductor layer is formed to cover the top and side surfaces of the active layer.
KR1020100022453A 2010-03-12 2010-03-12 Semiconductor light emitting device KR20110103229A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140039608A (en) * 2012-09-24 2014-04-02 삼성전자주식회사 3-dimensional nanoplasmonic structure and method of manufacturing the same
KR20160112373A (en) * 2015-03-19 2016-09-28 엘지이노텍 주식회사 Uv light emitting device and lighting system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140039608A (en) * 2012-09-24 2014-04-02 삼성전자주식회사 3-dimensional nanoplasmonic structure and method of manufacturing the same
KR20160112373A (en) * 2015-03-19 2016-09-28 엘지이노텍 주식회사 Uv light emitting device and lighting system

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