KR20110082268A - Nitride semiconductor light emitting device - Google Patents

Nitride semiconductor light emitting device Download PDF

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Publication number
KR20110082268A
KR20110082268A KR1020100002165A KR20100002165A KR20110082268A KR 20110082268 A KR20110082268 A KR 20110082268A KR 1020100002165 A KR1020100002165 A KR 1020100002165A KR 20100002165 A KR20100002165 A KR 20100002165A KR 20110082268 A KR20110082268 A KR 20110082268A
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South Korea
Prior art keywords
nitride semiconductor
type
light emitting
emitting device
layer
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KR1020100002165A
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Korean (ko)
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사공탄
윤석호
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삼성엘이디 주식회사
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Priority to KR1020100002165A priority Critical patent/KR20110082268A/en
Publication of KR20110082268A publication Critical patent/KR20110082268A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes

Abstract

The present invention relates to a nitride semiconductor light emitting device, and an aspect of the present invention relates to an n-type and p-type nitride semiconductor layer, an active layer formed between the n-type and p-type nitride semiconductor layers, and the n-type nitride semiconductor layer and the It is formed in at least one of a position corresponding to the active layer and a position corresponding to the p-type nitride semiconductor layer and the active layer, and dispersed in the host material and the host material made of a nitride semiconductor to form a heterojunction interface with the host material The present invention provides a nitride semiconductor light emitting device including a current diffusion layer having a cluster formed of a material having a greater bandgap energy than the host material.

Description

Nitride Semiconductor Light Emitting Device

The present invention relates to a nitride semiconductor light emitting device, and more particularly, to a nitride semiconductor light emitting device having improved electrical characteristics and external light extraction efficiency.

A semiconductor light emitting device is a semiconductor device capable of generating light of various colors based on recombination of electrons and holes at junctions of p and n type semiconductors when a current is applied. Such semiconductor light emitting devices have a number of advantages, such as long lifespan, low power supply, excellent initial driving characteristics, high vibration resistance, etc., compared to filament based light emitting devices. In particular, in recent years, group III nitride semiconductors capable of emitting light in a blue series short wavelength region have been in the spotlight.

The nitride single crystal constituting the light emitting device using the group III nitride semiconductor is formed on a specific growth substrate, such as a sapphire or SiC substrate. However, in the case of using an insulating substrate such as sapphire, the arrangement of electrodes is greatly limited. That is, in the conventional nitride nitride semiconductor light emitting device, since the electrodes are generally arranged in the horizontal direction, the current flow becomes narrow. Due to such a narrow current flow, the operating voltage (Vf) of the light emitting device is increased, the current efficiency is lowered, and at the same time, there is a problem of being vulnerable to electrostatic discharge. In order to solve this problem, several methods have been proposed to improve the current spreading function in the light emitting device.

One of them is a method of inducing lateral flow of current by introducing a current blocking layer into the semiconductor layer, but in order to insert heterogeneous materials, for example, dielectric materials such as SiO 2 into the nitride semiconductor. Additional processes are required, and there is a problem that adversely affects the crystallinity. Alternatively, a structure in which an undoped semiconductor layer is inserted into the n-type and p-type semiconductor layers may be used, which uses a phenomenon in which electron mobility is relatively increased in the undoped semiconductor layer. However, even when the undoped semiconductor layer is used, there is a problem in that the current dissipation effect is insufficient due to the substantial difference in electron mobility.

SUMMARY OF THE INVENTION An object of the present invention is to provide a nitride semiconductor light emitting device capable of maintaining operating voltage characteristics while employing a high resistance region for improving the current spreading function.

In order to achieve the above object, one aspect of the present invention,

n-type and p-type nitride semiconductor layers, an active layer formed between the n-type and p-type nitride semiconductor layers, a position corresponding to the n-type nitride semiconductor layer and the active layer, and between the p-type nitride semiconductor layer and the active layer It is formed in at least one of the positions corresponding to, and has a host material consisting of a nitride semiconductor and the cluster is dispersed in the host material to form a heterojunction interface with the host material and a material having a greater band gap energy than the host material It provides a nitride semiconductor light emitting device comprising a current diffusion layer.

Another aspect of the invention,

a nitride semiconductor layer formed on at least one of an n-type and p-type nitride semiconductor layer, an active layer formed between the n-type and p-type nitride semiconductor layer, the n-type nitride semiconductor layer, and the p-type nitride semiconductor layer; It provides a nitride semiconductor light emitting device comprising a current diffusion layer formed in the host material and the host material formed within the host material to form a heterojunction interface with the host material and having a cluster of a material having a greater bandgap energy than the host material.

In one embodiment of the present invention, the host material may be an undoped semiconductor.

In one embodiment of the present invention, the host material is made of GaN, the cluster may be made of AlGaN or AlN.

In one embodiment of the present invention, the host material is made of InGaN, the cluster may be made of GaN or AlN.

In one embodiment of the present invention, the cluster may have a nano size.

In one embodiment of the present invention, the cluster may have a pyramid shape.

In one embodiment of the present invention, the cluster may be arranged in two dimensions.

In one embodiment of the present invention, the cluster has a plurality of two-dimensional array structure, the plurality of two-dimensional array structure may be formed spaced apart from each other in the thickness direction of the current diffusion layer.

In an embodiment, the n-type electrode formed on one surface of the n-type nitride semiconductor layer exposed by removing a portion of the p-type nitride semiconductor layer and the active layer and the p-type electrode formed on an upper surface of the p-type nitride semiconductor layer It may further include.

In an embodiment of the present disclosure, the n-type and p-type nitride semiconductor layers may further include n-type and p-type electrodes respectively formed on surfaces opposite to the active layer.

In the case of the nitride semiconductor light emitting device according to the present invention, the current dispersion characteristics may be improved by the effect of increasing the electron mobility at the heterojunction interface by interposing a current diffusion layer inside the light emitting device. Furthermore, by optimizing the internal structure of the current spreading layer, the operating voltage is not increased according to the adoption of the current spreading layer.

1 is a cross-sectional view schematically showing a nitride semiconductor light emitting device according to an embodiment of the present invention.
FIG. 2 is an enlarged view of a region A around the current diffusion layer included in the nitride semiconductor light emitting device of FIG. 1.
3 shows conduction band energy levels at the heterojunction interface of the nitride semiconductor layer.
4 and 5 are cross-sectional views schematically showing a semiconductor light emitting device according to another embodiment of the present invention.
FIG. 6 is an enlarged view of an area B surrounding the current spreading layer of the nitride semiconductor light emitting device of FIG. 5.
7 is a schematic cross-sectional view of a semiconductor light emitting device according to still another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. In addition, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity, and the elements denoted by the same reference numerals in the drawings are the same elements.

1 is a cross-sectional view schematically illustrating a nitride semiconductor light emitting device according to an exemplary embodiment of the present invention, and FIG. 2 is an enlarged view of an area A around the current diffusion layer provided in the nitride semiconductor light emitting device of FIG. 1. 1 and 2, in the nitride semiconductor light emitting device 100 according to the present embodiment, a light emitting structure is formed on a substrate 101, and the light emitting structure includes an n-type nitride semiconductor layer 102 and an active layer 104. ) And the p-type nitride semiconductor layer 105. In the present embodiment, a current spreading layer 103 is formed inside the light emitting structure, specifically, between the n-type nitride semiconductor layer 102 and the active layer 104, and the current spreading layer 103 has a uniform current flow throughout the light emitting area. It can function to form. As a structure for applying an external electric signal, an n-type electrode may be formed in a mesa etching region of the n-type nitride semiconductor layer 102, that is, a portion of the active layer 104 and the p-type nitride semiconductor layer 105 is removed and exposed. 106a is formed, and the p-type electrode 106b is formed on the p-type nitride semiconductor layer 105. This corresponds to a horizontal structure in terms of electrode position, and as will be described later, the present invention can be applied to a vertical structure.

The substrate 101 is provided for the growth of nitride semiconductor single crystals, and includes sapphire, Si, ZnO, GaAs, SiC, MgAl 2 O 4 , MgO, LiAlO 2 , LiGaO 2 , A substrate made of a material such as GaN can be used. In this case, the sapphire is a Hexa-Rhombo R3c symmetric crystal and the lattice constants of c-axis and a-direction are 13.001 13. and 4.758Å, respectively, C (0001) plane, A (1120) plane, R 1102 surface and the like. In this case, since the C surface is relatively easy to grow a nitride thin film and stable at high temperature, it is mainly used as a substrate for growing a nitride semiconductor.

The n-type and p-type nitride semiconductor layers 102 and 105 have an Al x In y Ga (1-xy) N composition formula, where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, and 0 ≦ x + y ≦ 1. And, for example, a material such as GaN, AlGaN, InGaN may be equivalent. In addition, Si, Ge, Se, Te and the like may be used as the n-type impurity, and Mg, Zn, Be and the like may be used as the p-type impurity. The active layer 104 formed between the n-type and p-type nitride semiconductor layers 102 and 105 emits light having a predetermined energy by recombination of electrons and holes, and the quantum well layer and the quantum barrier layer alternately. Stacked multiple quantum well (MQW) structures, such as InGaN / GaN structures, may be used. Meanwhile, the n-type and p-type nitride semiconductor layers 102 and 105 and the active layer 104 may be formed using a semiconductor layer growth process such as MOCVD, MBE, HVPE, and the like known in the art.

The current spreading layer 103 induces a current to spread evenly throughout the light emitting surface, and as shown in FIG. 2, the current spreading layer 103 includes a host material 103a and a cluster 103b formed therein. In this case, the bandgap energy of the material forming the cluster 103b is greater than the bandgap energy of the host material 103a. For example, when the host material 103a is made of GaN, the cluster 103b may be made of AlGaN or AlN, and when the host material 103a is made of InGaN, the cluster 103b may be made of GaN or AlN. . Accordingly, the host material 103a and the cluster 103b form a heterojunction interface, and since the mobility of the carrier is improved at this heterojunction interface, a lateral current flow can be formed. 3 shows conduction band energy levels at the heterojunction interface of the nitride semiconductor layer. Referring to FIG. 3, in fact, a well region is generated at a heterogeneous nitride semiconductor layer, for example, at a GaN and AlGaN interface due to polarization, and the carrier e included in the well region has relatively mobility. Therefore, by introducing heterojunction interfaces such as GaN / AlGaN or InGaN / GaN, a high level of current spreading characteristics can be ensured.

However, in such heterojunctions, it is necessary to use a material having a relatively large energy band gap, such as AlGaN, which may act as a barrier to the progression of the carrier, thereby causing an increase in operating voltage. In addition, as the heterojunction interface increases, the stress generated at the interface may also increase, which may also contribute to an increase in operating voltage. In this embodiment, in order to minimize such a problem, the substance with a large energy band gap was employ | adopted in cluster form. In this case, the host material 103a and the cluster 103b may be made of a doped or undoped semiconductor, and when doped, they may be doped to have a conductivity type such as that adjacent to the n-type and p-type nitride semiconductor layers 102 and 105. Can be.

As shown in FIG. 2, a cluster 103b dispersed inside a host material 103a having a relatively low energy band gap forms a well region having a high mobility of carriers at an interface thereof, and another adjacent cluster 103b. ) May form an expansion well channel C due to proximity effect. In this case, the expansion well channel C is formed at an interface located in the direction of the n-type nitride semiconductor layer 102 due to the influence of polarization. By the cluster 103b structure, electrons traveling from the n-type nitride semiconductor layer 102 toward the active layer 104 can be sufficiently diffused in the lateral direction, that is, the direction perpendicular to the thickness direction. Furthermore, when a material such as AlGaN is employed in the form of a thin film, the effect of increasing the operating voltage which may occur may be reduced. This is because the expansion well channel C formed by the cluster 103b improves the lateral current flow as described above and does not have a large resistance to the current flow in the direction perpendicular thereto. Therefore, when the current spreading layer 103 proposed in the present embodiment is used, the operating voltage characteristic can be maintained while obtaining the current spreading effect.

The cluster 103b may be formed in various structures to form the extended well channel C by the heterojunction interface, and may be arranged in a two-dimensional structure. In this case, both regular and irregular arrangements may be used, and as shown in FIG. 2, the two-dimensional structure arrangement may be arranged to be spaced apart from each other in the stacking direction of the light emitting structure. In addition, in terms of shape, the cluster 103b may have various shapes that can exist as a nitride semiconductor single crystal. For example, when the host material 103a is grown and then the cluster 103b is formed thereon, the cluster 103b may be grown in a hexagonal pyramid shape, and the host material 103a is regrown to cover the cluster 103b. The current spreading layer 103 can be completed.

Meanwhile, in the embodiment of FIG. 1, the current spreading layer 103 is formed between the n-type nitride semiconductor layer 102 and the active layer 104, but the position thereof may be variously modified as necessary. 4 and 5 are cross-sectional views schematically showing a semiconductor light emitting device according to another embodiment of the present invention. FIG. 6 is an enlarged view of the area around the current spreading layer B included in the nitride semiconductor light emitting device of FIG. 5.

First, in the semiconductor light emitting device 200 according to the embodiment of FIG. 4, the light emitting structure is formed on the substrate 201 as in the previous embodiment, and the light emitting structure includes the n-type nitride semiconductor layer 202 and the active layer 204. ) And a p-type nitride semiconductor layer 205. In addition, the n-type electrode 206a is formed in the mesa etching region of the n-type nitride semiconductor layer 202, that is, a portion of the active layer 204 and the p-type nitride semiconductor layer 205 is removed and exposed. The p-type electrode 206b is formed on the type nitride semiconductor layer 205. In the present embodiment, the current spreading layer 203 is disposed inside the n-type nitride semiconductor layer 202, and in this case, the current dispersion effect can be achieved by the heterojunction interface between the cluster and the host material. In particular, when the host material is formed of an undoped semiconductor, electron mobility in the current diffusion layer 203 can be increased, which is more advantageous for current diffusion. Although not separately illustrated, in a similar manner, the current spreading layer 203 may be disposed in the p-type nitride semiconductor layer 205, and may be disposed in both the n-type and p-type nitride semiconductor layers 204 and 205. There will be.

Next, in the semiconductor light emitting device 300 according to the embodiment of FIG. 5, the light emitting structure is formed on the substrate 301 as in the previous embodiment, and the light emitting structure includes the n-type nitride semiconductor layer 302 and the active layer ( 304 and a p-type nitride semiconductor layer 305. In addition, the n-type electrode 306a is formed in the mesa etching region of the n-type nitride semiconductor layer 302, that is, a portion of the active layer 304 and the p-type nitride semiconductor layer 305 is removed and exposed. The p-type electrode 306b is formed on the type nitride semiconductor layer 305. In the present embodiment, the current spreading layer 303 is disposed between the active layer 303 and the p-type nitride semiconductor layer 305. As in the present embodiment, when disposed adjacent to the p-type nitride semiconductor layer 305, it is possible to contribute to the improvement of the hole dispersion characteristics rather than the electrons. In this case, as shown in FIG. 6, the extended well channel C formed by the heterojunction interface between the host material 303a and the cluster 303b is positioned in the direction of the p-type nitride semiconductor layer 302 due to the polarization. It is formed at the interface.

Meanwhile, in the above embodiments, only the light emitting device in which the electrode is arranged in the horizontal structure has been described, and the current dispersion enhancement effect is a more important problem in the horizontal structure. Adoption is also possible.

7 is a schematic cross-sectional view of a semiconductor light emitting device according to still another embodiment of the present invention. In the semiconductor light emitting device 400 according to the present embodiment, a light emitting structure is formed on a conductive substrate 405, and the light emitting structure includes an n-type nitride semiconductor layer 401, an active layer 403, and a p-type nitride semiconductor layer 404. ). In this case, the current spreading layer 402 is disposed between the active layer 403 and the p-type nitride semiconductor layer 404 to contribute to current dispersion. In addition, an n-type electrode 406 is formed on the upper surface of the n-type nitride semiconductor layer 401. The conductive substrate 405 may serve as a p-type electrode as well as a support for supporting the light emitting structure in a process such as laser lift-off for removing the semiconductor growth substrate 101 described in the above embodiments. It may be made of a material containing any one of, Au, Ni, Al, Cu, W, Si, Se, GaAs, for example, Al doped material. In this case, depending on the selected material, the conductive substrate 405 may be formed by a method such as plating or bonding bonding.

The present invention is not limited by the above-described embodiment and the accompanying drawings, but is intended to be limited by the appended claims. Accordingly, various forms of substitution, modification, and alteration may be made by those skilled in the art without departing from the technical spirit of the present invention described in the claims, which are also within the scope of the present invention. something to do.

101: substrate 102: n-type nitride semiconductor layer
103: current diffusion layer 103a: host material
103b: cluster 104: active layer
105: p-type nitride semiconductor layer 106a: n-type and p-type electrodes
C: expansion well channel

Claims (11)

n-type and p-type nitride semiconductor layers;
An active layer formed between the n-type and p-type nitride semiconductor layers; And
And formed in at least one of a position corresponding to the n-type nitride semiconductor layer and the active layer and a position corresponding to the p-type nitride semiconductor layer and the active layer, and are dispersed in the host material made of a nitride semiconductor and the host material. A current diffusion layer forming a heterojunction interface with the host material and including a cluster of a material having a bandgap energy greater than that of the host material;
Nitride semiconductor light emitting device comprising a.
n-type and p-type nitride semiconductor layers;
An active layer formed between the n-type and p-type nitride semiconductor layers; And
It is formed in at least one of the inside of the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, and formed in the host material and the host material made of a nitride semiconductor to form a heterojunction interface with the host material than the host material A current spreading layer having a cluster made of a material having a high band gap energy;
Nitride semiconductor light emitting device comprising a.
The method according to claim 1 or 2,
And the host material is an undoped semiconductor.
The method according to claim 1 or 2,
The host material is made of GaN, the cluster is a nitride semiconductor light emitting device, characterized in that made of AlGaN or AlN.
The method according to claim 1 or 2,
The host material is made of InGaN, the cluster is a nitride semiconductor light emitting device, characterized in that made of GaN or AlN.
The method according to claim 1 or 2,
The cluster is a nitride semiconductor light emitting device, characterized in that having a nano size.
The method according to claim 1 or 2,
The cluster is a nitride semiconductor light emitting device, characterized in that having a pyramid shape.
The method according to claim 1 or 2,
The cluster is nitride semiconductor light emitting device, characterized in that arranged in two dimensions.
The method according to claim 1 or 2,
The cluster is provided with a plurality of two-dimensional array structure, the plurality of two-dimensional array structure nitride semiconductor light emitting device, characterized in that formed spaced apart from each other in the thickness direction of the current diffusion layer.
The method according to claim 1 or 2,
And an n-type electrode formed on one surface of the n-type nitride semiconductor layer exposed by removing a portion of the p-type nitride semiconductor layer and the active layer and a p-type electrode formed on an upper surface of the p-type nitride semiconductor layer. Nitride semiconductor light emitting device.
The method according to claim 1 or 2,
The n-type and p-type nitride semiconductor light emitting device further comprises n-type and p-type electrode formed on the surface opposite to the active layer in the semiconductor layer.
KR1020100002165A 2010-01-11 2010-01-11 Nitride semiconductor light emitting device KR20110082268A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011055641A1 (en) 2011-08-18 2013-02-21 Hyundai Motor Company VARIABLES COMPACTION RATIO DEVICE WITH DUAL ECCENTRIC CONNECTIONS

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011055641A1 (en) 2011-08-18 2013-02-21 Hyundai Motor Company VARIABLES COMPACTION RATIO DEVICE WITH DUAL ECCENTRIC CONNECTIONS

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