KR20110074500A - Method of arranging nanovire on substrate - Google Patents
Method of arranging nanovire on substrate Download PDFInfo
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- KR20110074500A KR20110074500A KR1020110054438A KR20110054438A KR20110074500A KR 20110074500 A KR20110074500 A KR 20110074500A KR 1020110054438 A KR1020110054438 A KR 1020110054438A KR 20110054438 A KR20110054438 A KR 20110054438A KR 20110074500 A KR20110074500 A KR 20110074500A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0061—Methods for manipulating nanostructures
- B82B3/0071—Sorting nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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Abstract
Description
The present application relates generally to a method of arranging nanowires, and more particularly, to a method of arranging nanowires on a substrate.
Nanowires are materials with so-called one-dimensional structures ranging from a few nanometers in diameter to tens of nanometers in length and several microns in length. Nanowire is one of the ten technologies that will change the world, commonly referred to as nanosurfaces, nanotubes, nanorods and nanospheres. These nanowires exhibit unique characteristics that differ from those of conventional thin films or bulks in electrical, optical, physical, and properties. Research into applications using solar cells, channels of transistors, sensors, semiconductor devices, and the like has been conducted.
However, despite these outstanding characteristics, it is still not commercially available. This is because, unlike other thin films and bulks, there is a shortage of alignment techniques to date to suit the nanowires as desired. To overcome this, many researchers are working on related research. Typically, contact printing, flow channel, bubble film, LB, rolling, and the like are known as methods for arranging nanowires. Among them, the rolling method is a method of selectively growing nanowires and then pushing them with a roller to print and arrange on a desired substrate. Specifically, the paper by Yerushalmi et al. Applied Physics Letters 91, 203104 (2007) discloses a method of arranging nanowires by a printing method using a roller. However, there is a problem in that the nanowires are used as they are, and the nanowires cannot be manipulated on a substrate to have various arrangements.
The technical problem to be achieved by the present invention is to provide a method for arranging nanowires with a uniform density in a desired direction.
Another technical object of the present invention is to provide a method for arranging nanowires in various directions.
In order to achieve the above technical problem, a method of arranging nanowires according to an aspect of the present application is provided. In the method of arranging the nanowires, a nanowire having a controlled position and density is first provided on a substrate. A physical force is applied to the nanowires provided on the substrate.
Provided is a method of arranging nanowires on a substrate according to another aspect of the present application for achieving the above technical problem. In the method of arranging nanowires on the substrate, first, a nanowire having a controlled position and density is provided on a first surface of the first transparent substrate. A physical force is applied to the nanowires provided on the first surface of the first transparent substrate to arrange the nanowires on the first surface of the first transparent substrate. A second substrate is provided. Aligning the translucent first substrate on a first side of the second substrate. The first surface of the light transmissive first substrate and the first surface of the second substrate are bonded to each other. The nanowires arranged on the first surface of the translucent first substrate are moved to the first surface of the second substrate.
Provided is a method of arranging nanowires on a substrate according to another aspect of the present application for achieving the above technical problem. In the method of arranging nanowires on the substrate, nanowires whose position and density are controlled on the first surface of the first substrate are first formed by the VLS method using a metal catalyst. The nanowires are arranged on the first surface of the first substrate by applying a physical force to the nanowires formed on the first surface of the first substrate. A light transmissive second substrate is provided. The nanowires arranged on the first side of the first substrate are moved to the first side of the transparent second substrate. A third substrate is provided. The nanowires moved to the first surface of the second transparent substrate are moved to the third substrate.
According to one embodiment of the present application, nanowires may be arranged on a substrate while controlling position and density.
According to another embodiment of the present application, the nanowires disposed on the light transmissive substrate may be arranged on the other substrate at a desired position in a desired direction. Therefore, it can be applied as a component in various electronic devices that require precise arrangement of nanowires.
1 is a flowchart schematically showing a nanowire array method according to an embodiment of the present application.
2 to 10 are diagrams illustrating a method of arranging nanowires according to an exemplary embodiment of the present application.
11 is a flowchart schematically illustrating a method of arranging nanowires on a substrate according to an embodiment of the present application.
12 to 19 are diagrams illustrating a method of arranging nanowires according to an exemplary embodiment of the present application.
20 is a flowchart schematically illustrating a method of arranging nanowires on a substrate according to another embodiment of the present application.
21 to 26 are diagrams illustrating a method of arranging nanowires on a substrate according to an embodiment of the present application.
27 to 30 schematically illustrate an application of the method of arranging nanowires on a substrate according to an embodiment of the present application.
Embodiments of the present application will now be described in more detail with reference to the accompanying drawings. However, the techniques disclosed in this application are not limited to the embodiments described herein but may be embodied in other forms. It should be understood, however, that the embodiments disclosed herein are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the widths or thicknesses of the layers (or layers) and regions are enlarged more than they are in order to clearly express the various layers (or layers) and regions. When described in the drawings as a whole, at the observer's point of view, if one element is referred to as being attached onto another element or substrate, it may be that one element is attached directly onto another element or substrate or an additional element may be interposed between them. It includes everything that it is. In addition, one of ordinary skill in the art may implement the spirit of the present application in various other forms without departing from the technical spirit of the present application. And, like numerals in the drawings refer to like elements.
When the term first or second side of the substrate is used herein, the surface of the substrate on which the nanowires are disposed is defined as the first side. The side opposite to the first side of the substrate on which the nanowires are placed is defined as the second side.
1 is a flowchart schematically showing a nanowire array method according to an embodiment of the present application. Referring to FIG. 1, first, at 110 blocks, a nanowire with controlled position and density is provided on a substrate. The substrate may be, for example, a silicon substrate, an SOI substrate, a sapphire substrate, a quartz substrate, a glass substrate, or the like, but is not limited thereto. The nanowires may include nanotubes, nanorods, nanospheres, nanorods, and the like. In one embodiment, the method for providing the nanowires includes forming a metal catalyst pattern on the substrate and growing a nanowire from the metal catalyst pattern. The process of forming the metal catalyst pattern on the substrate first applies a polymer on the substrate. The polymer is patterned to form a contact pattern of the polymer. A metal layer is deposited on the substrate including the contact pattern. The metal catalyst pattern may be formed by lifting off the polymer. According to one embodiment, the polymer may be a photosensitive polymer. The photosensitive polymer may be, for example, a positive photoresist or a negative photoresist. The patterning process of the photosensitive polymer may include a lithography process and an etching process using a photomask. In another embodiment, the polymer may be a resist for electron beams. In this case, the patterning process of the polymer may be a pattern forming process using an electron beam.
The process of growing the nanowires from the metal catalyst pattern may be performed by, for example, the VLS method. The VLS method is a known method commonly known as a vapor-liquid-solid method. That is, the VLS method prepares catalyst particles and provides the catalyst particles with vapor in the vapor phase of a substance to be grown into nanowires. The vapor is allowed to dissolve in the catalyst particles to convert to a liquid state. When the vapor exceeds the dissolution limit in the liquid alloyed with the catalyst particles, it is precipitated to grow into nanowires.
At 120 blocks, a physical force is applied against the nanowires provided on the substrate. According to an embodiment, in the process of applying the physical force, a method of flowing a gas in a predetermined direction and contacting the flowing gas and the nanowire with respect to the nanowire provided on the substrate may be applied. The gas may be an inert gas, and may be, for example, nitrogen or argon gas. According to another embodiment, in the process of applying the physical force, first, an array substrate is prepared. The substrate provided with the nanowires is brought into contact with the array substrate. The array substrate is moved in a predetermined direction in contact with the substrate. In another embodiment, the applying of the physical force coats a lubricant on the substrate provided with the nanowires. Prepare an array substrate. The substrate coated with the lubricant is brought into contact with the array substrate. The array substrate is moved in a predetermined direction in contact with the substrate. By applying a physical force through the above-described method, the nanowires can be arranged on the substrate based on the direction of the flowing gas or based on the moving direction of the array substrate.
Hereinafter, a method of arranging nanowires according to an embodiment described above with reference to FIG. 1 will be described in more detail with reference to the accompanying drawings.
2 to 10 are diagrams illustrating a method of arranging nanowires according to an exemplary embodiment of the present application. First, referring to FIG. 1, a
In another embodiment, an
Referring to FIG. 3, the
Referring to FIG. 4, a
Referring to FIG. 5, the
Referring to FIG. 6, the
FIG. 7 is a diagram illustrating a method of applying a physical force to the
8 and 9 illustrate a method of applying a physical force to the
Referring to FIG. 9, an
According to an embodiment, before arranging the
According to some embodiments, the process of coating the
Referring to FIG. 10, the appearance of the
According to one embodiment of the present application, in the VLS method applying the metal catalyst pattern, by using the property that the nanowires are selectively grown on the metal catalyst pattern, it is possible to adjust the position, size, density, etc. of the nanowires. Thereafter, a physical force may be applied to the nanowires grown with a predetermined density and position to form the nanowires in a predetermined direction on the substrate.
11 is a flowchart schematically illustrating a method of arranging nanowires on a substrate according to an embodiment of the present application. Referring to FIG. 11, first, at 1110 blocks, a nanowire having a controlled position and density is provided on a first surface of a translucent first substrate. For example, the transparent first substrate may include a glass, a heat resistant glass, quartz, sapphire, zinc oxide, or the like as a transparent substrate. The process of providing the nanowires whose position and density are controlled on the first surface of the translucent first substrate may be substantially the same as the processes of the above-described embodiments with reference to FIGS. 2 to 6. Therefore, detailed description is omitted in order to exclude duplication.
According to another embodiment, the process of providing the nanowires in which the position and the density are controlled on the first surface of the translucent first substrate is performed by the process described above with reference to FIGS. 2 to 10. First, the controlled nanowires are provided. Thereafter, the preliminary substrate and the translucent first substrate may be bonded to each other, and the nanowires may be moved from the preliminary substrate to the translucent first substrate. The movement process of the nanowires may be performed by, for example, performing a functionalization process to improve adhesion to the nanowires on the translucent first substrate.
In
In
In
In
In
As such, first, nanowires may be formed and arranged on the first transparent substrate, and the nanowires formed and reheated on the first transparent substrate may be transferred to the second substrate.
Hereinafter, a method of arranging nanowires on a substrate according to an embodiment described above with reference to FIG. 11 will be described in more detail with reference to the accompanying drawings.
12 to 19 are diagrams illustrating a method of arranging nanowires according to an exemplary embodiment of the present application. Referring to FIG. 12, a light transmissive
Referring to FIG. 13, a
Referring to FIG. 14, the
Referring to FIG. 15, a
Referring to FIG. 16, a
Referring to FIG. 17, a functionalization process is performed to improve adhesion to the
Referring to FIG. 18, the transparent
Referring to FIG. 19, the
Thus, first, the
20 is a flowchart schematically illustrating a method of arranging nanowires on a substrate according to another embodiment of the present application. Referring to FIG. 20, first, in the 2010 block, nanowires having a controlled position and density on a first surface of a first substrate are formed by a VLS method using a metal catalyst. This process is substantially the same as the process in the embodiment described above with reference to FIGS. 2 to 6 of the present application. Therefore, detailed description is omitted in order to exclude duplication.
In
In
In
In
In
Hereinafter, a method of arranging nanowires on a substrate according to an embodiment described above with reference to FIG. 20 will be described in more detail with reference to the accompanying drawings.
21 to 26 are diagrams illustrating a method of arranging nanowires on a substrate according to an embodiment of the present application. Referring to FIG. 21, an
Referring to FIG. 22,
Referring to FIG. 23, a light transmissive
Referring to FIG. 24, the
Referring to FIG. 25, a
Referring to FIG. 26, a
The method of arranging nanowires on a substrate according to an embodiment of the present application may be applied to various aspects in manufacturing an electronic device. 27 to 30 schematically illustrate an application of the method of arranging nanowires on a substrate according to an embodiment of the present application. Referring to FIG. 27, by repeatedly performing a nanowire array method according to an embodiment of the present application,
As such, the nanowire array method according to an embodiment of the present application may be applied to the method of forming the field effect transistor using the nanowire.
Although described above with reference to the drawings and embodiments, those skilled in the art will be variously modified and changed the embodiments disclosed in this application within the scope not departing from the technical spirit of the present application described in the claims below I can understand that you can.
210: substrate, 220: polymer, 230: insulator film,
330: polymer contact pattern, 440: metal layer, 550: metal catalyst pattern, 660: nanowire, 770: gas, 880: lubricant, 990: array substrate,
1210: first transparent substrate, 1320: first alignment mark, 1410: first surface of first transparent substrate, 1420: second side of first transparent substrate, 1430: nanowire, 1510: second substrate, 1520: insulator Membrane, 1620: second alignment mark, 1730: functionalized layer,
2110: first substrate, 2115: first surface of first substrate, 2120: insulator film, 2130: first alignment mark, 2240: nanowire, 2310: second substrate, 2330: alignment mark, 2530: alignment mark, 2710 : Substrate, 2720, 2730: nanowire,
2810: substrate, 2820: nanowire, 2830: electrode layer, 2840: gate insulating layer, 2850: first gate electrode, 2860: second gate electrode.
Claims (20)
(a) providing a location and density controlled nanowire on the substrate; And
(b) applying a physical force to the nanowires provided on the substrate;
Arrangement method of nanowires.
(a) the process
(a1) forming a metal catalyst pattern on the substrate; And
(a2) growing a nanowire from the metal catalyst pattern;
Arrangement method of nanowires.
(a1) process
Applying a polymer on the substrate;
Patterning the polymer to form a contact pattern of the polymer;
Depositing a metal layer on the substrate including the contact pattern; And
Lifting off the polymer to form the metal catalyst pattern;
Arrangement method of nanowires.
(a2) the process
A nanowire array method for growing a nanowire from the metal catalyst pattern by applying the VLS method.
(B) process
The nanowire arrangement method for flowing the gas in one direction with respect to the nanowire provided on the substrate and the nanowire is arranged by contacting the flowing gas and the nanowire.
The gas is an inert gas, wherein the nanowires are arranged in the direction in which the inert gas flows.
(B) process
(b1) preparing an array substrate;
(b2) contacting the substrate provided with the nanowires with the array substrate; And
(b3) A method of arranging nanowires, comprising moving the array substrate in one direction in contact with the substrate.
The step (b)
(b1) coating a lubricant on the substrate provided with the nanowires;
(b2) preparing an array substrate;
(b3) contacting the lubricant coated substrate with the array substrate; And
(b4) A method of arranging nanowires, comprising moving the array substrate in one direction while being in contact with the substrate.
Method of arranging nanowires in which the nanowires are arranged along the moving direction of the array substrate.
(a) providing a location and density controlled nanowire on the first side of the light transmissive substrate;
(b) arranging the nanowires on the first side of the first transparent substrate by applying a physical force to the nanowires provided on the first side of the first transparent substrate;
(c) providing a second substrate;
(d) aligning the translucent first substrate on a first side of the second substrate;
(e) bonding the first surface of the translucent first substrate and the first surface of the second substrate; And
(f) moving the nanowires arranged on the first side of the translucent first substrate to the first side of the second substrate;
Method of arranging nanowires on a substrate.
(a) The process is performed by the VLS method using a metal catalyst pattern
Method of arranging nanowires on a substrate.
(b) The method of applying the physical force of the process
Flowing gas to the substrate or contacting the array substrate with the substrate and moving the array substrate;
Method of arranging nanowires on a substrate.
(d) process
Forming an alignment mark on the translucent first substrate and the second substrate; And
Arranging the alignment marks to correspond to each other,
The alignment mark may be aligned such that the nanowires of the light transmissive first substrate are positioned at positions corresponding to the positions of the second substrate to which the nanowires are to be moved.
Method of arranging nanowires on a substrate.
Step (e) is
(e1) performing a functionalization treatment to improve adhesion to the nanowires on the first surface of the second substrate; And
(e2) bonding the first surface of the first substrate to the first surface of the second substrate on which the functionalization is performed;
Method of arranging nanowires on a substrate.
The functionalization is carried out using polyelasin
Method of arranging nanowires on a substrate.
(f) process
And detaching the light-transmissive first substrate and the second substrate,
After the desorption, the nanowires are arranged on a second substrate having relatively good adhesion to the nanowires.
Method of arranging nanowires on a substrate.
(b) arranging the nanowires on the first surface of the first substrate by applying a physical force to the nanowires formed on the first surface of the first substrate;
(c) providing a transparent second substrate;
(d) moving the nanowires arranged on the first side of the first substrate to the first side of the translucent second substrate;
(g) providing a third substrate;
(h) moving the nanowires moved to the first surface of the translucent second substrate to the third substrate;
Method of arranging nanowires on a substrate.
(b) The method of applying the physical force of the process
Flowing gas to the first substrate or contacting the array substrate with the first surface of the first substrate and moving the array substrate;
Method of arranging nanowires on a substrate.
(d) process
Forming alignment marks on the first substrate and the transparent second substrate; And
Arranging the alignment marks to correspond to each other,
The alignment mark is aligned to position the nanowires of the first substrate at a position corresponding to the position of the translucent second substrate to which the nanowires are to be moved.
Method of arranging nanowires on a substrate.
(h) the process of moving
(h1) forming an alignment mark on the transparent second substrate and the third substrate; And
(h2) including arranging the alignment marks to correspond to each other,
The alignment mark is aligned so that the nanowires of the translucent second substrate are positioned at a position corresponding to the position of the third substrate to which the nanowires are to be moved.
Method of arranging nanowires on a substrate.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102012105595A1 (en) | 2011-08-10 | 2013-02-14 | Samsung Electronics Co. Ltd. | Magnetic tunnel junction device of memory device, has an upper structure having magnetic layer, and a lower structure having extrinsic vertical magnetization structures formed on magnetic layer and perpendicular magnetization layer |
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2011
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012105595A1 (en) | 2011-08-10 | 2013-02-14 | Samsung Electronics Co. Ltd. | Magnetic tunnel junction device of memory device, has an upper structure having magnetic layer, and a lower structure having extrinsic vertical magnetization structures formed on magnetic layer and perpendicular magnetization layer |
DE102012105595B4 (en) | 2011-08-10 | 2021-10-07 | Samsung Electronics Co. Ltd. | Magnetic tunnel junction devices, memories, storage systems and electronic devices |
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