KR20100050699A - Patterning method of metal line on flexible substrate using nanoimprint lithography - Google Patents

Abstract

PURPOSE: A patterning method of a metal line on a flexible substrate using a nano-imprint lithography are provided to reduce process costs and a process time since an etching of a metal thin film and a lift-off process are not necessary. CONSTITUTION: A nano pattern(13) is formed on a first substrate(10) of a polymer material by using ultraviolet ray and pressure. Metal is evaporated over the second substrate(20) of the nano pattern on the first substrate and the polymer material. The deposited metal(15) on an emboss part of nano pattern is transcribed a deposited metal on the second substrate to form a metal wire(30). The film layer(7) is formed on a first substrate and a second substrate. The nano pattern is formed by an imprint equipment using the stamp(5).

Description

Patterning method of metal line on flexible substrate using nanoimprint lithography

The present invention relates to a method for patterning a metal line on a substrate using nanoimprint lithography, and more particularly to a nanoimprint lithography which can obtain many expected effects through a manufacturing method for patterning a metal line inside a substrate through a small number of manufacturing steps. It relates to a metal line patterning method on a substrate used.

In general, in order to pattern a metal line on a substrate, a technique of first patterning a photoresist layer using lithography technique, followed by depositing a metal and removing the photoresist layer, and after depositing a metal, patterning the photoresist layer and etching some metal to form a photoresist layer. Removal techniques are used.

In the case of the above techniques, the disadvantage of the line width limitation that the patterning of several tens of nanowire widths of photolithography technology is difficult and the disadvantages that may strain the flexible substrate or the non-flexible substrate and the process equipment under the influence of various chemicals Have

Therefore, in recent years, in order to overcome the limitations of the line width limitation of photolithography technology, many lithography such as electron beam lithography, atomic force microscopy lithography, nano imprint lithography, etc. Technologies are emerging, and nanoimprint lithography is one of the most popular technologies in terms of production speed and yield.

However, even when applying these nanoimprint techniques to produce metal lines with ultra-fine pattern sizes, such as tens of nanoscales, exposure to chemicals arising from the metallization or etching process is related to the limitations of the materials used and waste disposal. This is also a problem to overcome because it causes environmental problems.

1 is a view showing a method for transferring a metal to a conventional flexible substrate.

Here, the stamp 1 and the metal 3 on which the pattern to be transferred is engraved are made of a substrate 2 to be transferred, and the stamp 1 is a portion to which the surface treatment is performed so that the metal does not adhere well and the metal to be transferred ( 3) make up the coated part.

Briefly, the transfer method of the metal inside the flexible substrate is configured as follows.

FIG. 2 is a flowchart showing a conventional method of transferring a metal inside a flexible substrate. A stamp 1 having an extremely fine pattern is fabricated and subjected to a surface treatment process so that the metal 3 does not adhere well to this surface.

Then, the metal 3 is deposited or transferred to the flexible substrate 2 prepared by buried the metal 3 in a liquid state to form a pattern.

When another layer is to be placed on the pattern, the insulating material 4 is applied in consideration of the characteristics of the transferred metal and the characteristics of the substrate 2 on the flexible substrate on which the ultra fine metal pattern is transferred.

The uniformity of the surface and the insulating material through the CMP (5) process in order to pattern the metal (3-1) in the above manner once again using another stamp (1-1) on the applied insulating material (4) 4) Adjust the thickness.

In addition to the conventional metal line patterning method of the conventional flexible substrate 2 shown in FIG. 1 and FIG. 2, a method of performing patterning as if drawing liquid metal in a desired pattern shape or patterning a liquid metal in ink jet form have.

However, the conventional method for patterning a metal thin film having a line width of several tens of nanometers inside the flexible substrate 2 is not easy to control the thickness of the metal thin film because it uses a liquid metal, processable area and process Due to the limitation of time, it is vulnerable to industrialization that requires mass production.

SUMMARY OF THE INVENTION An object of the present invention is to provide a method of patterning a metal line on a substrate using nanoimprint lithography using one patterning step, one metal deposition process, one flexible substrate attachment, and some metal thin film removal processes. It's there.

Another object of the present invention is a substrate using nanoimprint lithography that forms a metal thin film of tens of nanoscale units inside a flexible substrate using some metal thin film removal process through patterning of several tens of nanoscale units by imprinting and metal thin film deposition step. A metal line patterning method is provided.

Another object of the present invention is to provide a metal line patterning method on a substrate using nanoimprint lithography to produce a pattern of dozens of nanoscale units on a flexible substrate through a nanoimprinting process step.

Another object of the present invention is a method of patterning metal lines on a substrate using nanoimprint lithography, which produces a pattern of tens of nanoscale units on a flexible substrate by depositing a metal thin film on a pattern of tens of nanoscale units through a plasma deposition of a metal thin film using plasma. To provide.

Another object of the present invention is flexible by passing a portion of the metal thin film layer formed by the imprinting patterning of several tens of nanoscale units and the deposition of the metal thin film using plasma with the substrate on which the metal thin film of the same material is deposited. The present invention provides a method for patterning a metal line on a substrate using nanoimprint lithography that produces a metal thin film pattern of tens of nanoscale units on a substrate.

Yet another object of the present invention is to contact a substrate on which a metal thin film is deposited on a pattern of several tens of nanoscale units and a substrate on which a metal thin film of the same material is deposited without contacting the substrate. Patterning a metal wire on a substrate using nanoimprint lithography to produce a metal thin film pattern of several tens of nanoscale units on a flexible substrate by transferring a portion of the metal thin film of the pattern of the same material without the pattern onto the deposited substrate. To provide a way.

Metal line patterning method on a substrate using nanoimprint lithography according to an embodiment of the present invention for achieving the above object, forming a nano-pattern on the first substrate of the polymer material using ultraviolet light and pressure; Depositing a metal on the front surface of the nano-pattern on the first substrate and the second substrate of the polymer material without the nano-pattern; And transferring the metal deposited on the embossed portion of the nano pattern on the first substrate to the metal deposited on the second substrate to form a metal line.

According to an embodiment of the present invention, the forming of the metal wire may include applying a photoresist film to a film having a functional group to adhere the photoresist film formed on the first substrate to a predetermined position on the first substrate coated with the photoresist film. Performing patterning by imprinting a nanopattern having a line width of?, Depositing a metal on the photosensitive film engraved with the nanopattern by the patterning step, and depositing a metal on the second substrate having no pattern Transferring the metal deposited on the embossed portion of the nano-pattern of the first substrate by using heat and pressure to the metal of the non-patterned second substrate, and evenly applying the photoresist film on the metal pattern of the first substrate again. Applying the metal to be contained between the photoresist;

Metal line patterning method on a substrate using nanoimprint lithography according to another embodiment of the present invention, applying the ultraviolet and pressure to the stamp to transfer the nano-pattern on the third substrate; Depositing a metal on an embossed portion of the nanopattern on the third substrate; Transferring metal deposited on the embossed portion of the nanopattern on the third substrate onto the fourth substrate using heat and pressure to form a metal wire; And evenly applying a photoresist film on the metal pattern of the third substrate so that the metal is contained between the photoresist film, thereby forming a metal wire on the third substrate and the fourth substrate without requiring a sacrificial layer. The third substrate of the nano-pattern is formed by separating a positive electrode metal pattern portion patterned by a nanoimprint process with a material having an insulating property and exposed to ultraviolet rays, and a predetermined distance from both sides of the anode metal pattern portion. A cathode metal pattern part is comprised.

Using the metal line patterning method on the substrate using the nanoimprint lithography according to the present invention as described above can obtain the following effects.

first. The manufacturing process is relatively simple, with the same line width or less as using conventional processes such as micro contact printing or ink jet printing, and can reduce manufacturing costs and manufacturing time.

second. It has the advantage that it can be enlarged without limiting the material and line width of the stamp to be used, thereby obtaining excellent yield.

third. Since patterning is performed using imprinting, it is not only different from the conventional patterning of semiconductors, but also requires no etching or etching process to remove residual materials involved in the general imprinting process. To be.

fourth. Since the metal thin film deposition process does not involve the etching process or the lift-up process of the metal thin film, which is performed in the conventional semiconductor process by performing the deposition process only, no additional photoresist patterning required for this process is required, which causes environmental pollution, process time, and process cost. It can be greatly reduced.

Hereinafter, exemplary embodiments of a metal line patterning method on a substrate using nanoimprint lithography according to the present invention will be described with reference to the accompanying drawings.

3 is a flow chart showing a metal line patterning method on a substrate using nanoimprint lithography according to an embodiment of the present invention, Figure 4 is a flow chart showing a metal line patterning method on a substrate using nanoimprint lithography according to another embodiment of the present invention 5 is a photograph of a metal line having a line width of several tens of nano units transferred to a flexible substrate by embodiments of the present invention, and FIG. 6 is an AFM measurement result of a metal line having a line width of several tens of nano units of FIG. 5. It is a photograph showing.

As shown in FIG. 3, a metal line patterning method on a substrate using nanoimprint lithography according to an embodiment of the present invention may include forming nano patterns 13, depositing metals 15 and 25, and forming metal lines 30. It is composed.

The forming of the nanopattern 13 is a process of forming the nanopattern 13 on the first substrate 10 made of a polymer material using ultraviolet rays and pressure, as shown in FIG.

That is, it is a process of transferring the relief pattern of the stamp 5 prepared by applying a photosensitive film 40 made of a material that is photosensitive through ultraviolet light and pressure on the surface of the flexible substrate 10.

In addition, when transferring the nanopattern 13 to the first substrate 10, it is also possible to use a roll-type UV-NIL.

When the embossed nanopattern 13 is formed on the first substrate 10, as shown in FIGS. 3B and 3C, the nanopattern 13 and the nanopattern on the first substrate 10 are not present. Metals 15 and 25 are deposited on the entire surface of the second substrate 20 made of a polymer material.

In this case, as shown in FIG. 3B, when the metal 15 is deposited on the nano-pattern 13 of several tens of nanometers on the first substrate 10, the upper portion of the transferred flexible first substrate 10 is formed. It is desirable to deposit metal less than the depth of the pattern.

On the first substrate 10 and the second substrate 20, a film layer 7 having a functional group for sticking the photosensitive film 40 to be used is formed.

Preferably, as the film layer 7, a polycarbonate film layer may be used.

Therefore, in principle, the shape of the nanopattern 13 on the first substrate 10 is formed on the film layer 7 having a functional group that allows the photoresist film 40 to adhere well by imprint equipment using the stamp 5. .

Application of the photosensitive film 40 on the first substrate 10 is performed by spin coating, so that the photosensitive film 40 formed on or on the first substrate 10 adheres well. It is made by applying to the film layer 7 with groups or dropping a certain amount.

As shown in FIG. 3C, the metal line 30 may be formed of the metal 15 deposited on the embossed portion of the nanopattern 13 on the first substrate 10 using heat and pressure. 2 is transferred to the metal 25 deposited on the substrate 20.

Finally, a nanoimprint process is performed on a material 20 that is sensitive to ultraviolet rays or a material that reacts with heat by using the stamp 5, preferably a roll type imprint stamp, on the substrate 20 to which the nanometal pattern is transferred.

Meanwhile, the steps of forming the metal line 30 on the second substrate 20 will be described in detail.

First, the photoresist film 40 is attached to the film layer 7 having a functional group to adhere the first substrate 10 on which the nanopattern 13 is formed and the photoresist film 40 formed on the first substrate 10 to adhere well. Apply (see Fig. 3 (a)).

Next, imprinting is performed so that the nano-pattern 13 having a predetermined line width is formed on the film layer 7 having a functional group that allows the photosensitive film 40 coated with the photosensitive film 40 on the first substrate 10 to adhere well. Patterning is performed by (see FIG. 3A).

Then, the metal 15 is deposited on the photosensitive film 40 having the nano pattern 13 engraved on the first substrate 10 formed by the patterning step (see FIG. 3B), and the second substrate having no pattern is formed. The metal 25 is deposited on the film layer 7 having a functional group for sticking the photosensitive film 40 on the top (20) (see FIG. 3C).

Then, the metal 15 deposited on the embossed portion of the nano-pattern 13 of the first substrate 10 is transferred to the metal 25 of the second substrate 20 without a pattern using heat and pressure. (See FIG. 3C), the metal 15 on the first substrate 10 is transferred onto the metal 25 on the second substrate 20 (see (d-1) in FIG. 3).

Here, when transferring the metal 15 on the first substrate 10 to the metal 25 of the second substrate 20, it is also possible to use a force such as static electricity, not heat and pressure.

In addition, the first substrate 10 of the nanopattern 13 may be patterned using heat and pressure.

Then, the photosensitive film 40 is evenly applied again on the metal pattern of the first substrate 10 so that the metal 15 is contained between the photosensitive films 40 (see (d-2) of FIG. 3).

After the process of forming the metal wire 30 (FIG. 3C) is completed, the two flexible first and second substrates 10 and 20 have a pattern of several tens of nanometers. The metal pattern on the upper side of the pattern of the first substrate 10 was transferred to the second substrate 20 without any metal pattern ((d-1 in FIG. 3)) and on the lower side of the photoresist pattern of several tens of nanometers. The metal will remain in place ((d-2) of FIG. 3).

Here, when removing some of the metal from the first substrate 10 of the nano-pattern 13, it is preferable to wipe with a eraser using a soft material such as rubber type.

Although the material of the first substrate 10 of the nano-pattern 10 or the second substrate 20 on which the nano-metal pattern is transferred is limited to a flexible substrate, it is possible to use a substrate that is not flexible according to the intended use and the application range. Do.

As shown in FIG. 4, a method of patterning a metal line on a substrate using nanoimprint lithography to deposit a metal line 30 without a sacrificial layer on a fourth substrate 200 in need of a sacrificial layer. The silver nano pattern 13 is transferred, the metal 15 is deposited, the metal wire 30 is formed, and the metal 15 is included in the photosensitive film 40.

The transfer of the nanopattern 13 on the third substrate 100 is transferred by applying ultraviolet rays and pressure to the stamp 50, as shown in FIG.

Then, on the third substrate 100, the film layer 7 having a functional group for sticking the photosensitive film 40 is formed.

In addition, the shape of the nanopattern 13 of the film layer 7 having a functional group to adhere the photosensitive film 40 on the third substrate 100 is formed by an imprint apparatus using the stamp 50.

On the other hand, when transferring the nano-pattern 13 to the third substrate 100, it is also possible to use a roll-type UV-NIL.

In the depositing of the metal 15 on the third substrate 100, as shown in FIG. 4B, the metal 15 is deposited on the embossed portion of the nanopattern 13.

The third substrate 100 of the nanopattern 13 may include an anode metal pattern portion 13-1 and a cathode metal pattern portion 13-1 in which a material having insulation characteristics and photosensitive to ultraviolet rays is patterned by a nanoimprint process. A cathode metal pattern portion 13-2 is formed so as to be spaced apart from each other by a predetermined distance with respect to 13-1).

Forming the metal line 300 on the fourth substrate 200 as shown in (d-1) of Figure 4, as shown in (c) of Figure 4, the nano-pattern on the third substrate 100 The metal 15 deposited on the embossed portion of 13 is transferred onto the fourth substrate 200 using heat and pressure.

Meanwhile, when transferring the metal 15 of the anode metal pattern portion 13-1 of the third substrate 100 to the fourth substrate 200, it is also possible to use a force such as static electricity, not heat and pressure.

When the metal 15 of the anode metal pattern part 13-1 is transferred to the fourth substrate 200, heat and pressure are applied to the third substrate 100 itself of the nanopattern 13. Patterning is also possible.

The step of embedding the metal 15 in the photosensitive film 40 may be performed by placing the photosensitive film 40 on the cathode metal pattern 13-2 of the third substrate 100 (see (d-2) of FIG. 4). It is a process of apply | coating evenly so that the metal 15 may be contained between the photosensitive films 40. FIG.

In addition, the nanoimprint process is performed by re-coating a material having an insulating characteristic on the cathode metal pattern part 13-2 and exposing to ultraviolet light.

When the nanoimprint process is performed by re-coating a material having an insulating characteristic on the cathode metal pattern portion 13-2 and applying a photosensitive material to ultraviolet rays, it is repeatedly performed by using a stamp having a pattern different from the pattern alignment system. It is preferable to manufacture the metal wire 30 inside.

Finally, a nanoimprint process is performed on a material that is sensitive to ultraviolet rays or a material that reacts with heat using a stamp 50, preferably a roll type imprint stamp, on the fourth substrate 200 on which the nanometal pattern is transferred. .

On the other hand, when removing some of the metal from the third substrate 100 of the nano-pattern, it is preferable to wipe with a eraser using a soft material such as rubber type.

Although the material of the third substrate 100 of the nano-pattern 100 or the fourth substrate 200 on which the nano-metal pattern is transferred is limited to a flexible substrate, it is possible to use a substrate that is not flexible according to the use purpose and the application range. Do.

According to the embodiments of the present invention as described above, it is possible to obtain a metal thin film having a line width of several tens of nano units transferred into the flexible substrate as shown in the photographs of FIGS. 5 and 6.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation in the scope of the appended claims. It will be understood by those skilled in the art that various modifications may be made and equivalents may be resorted to without departing from the scope of the appended claims.

1 is a view showing a method for transferring a metal to a conventional flexible substrate.

Figure 2 is a flow chart showing a conventional method for transferring the metal inside the flexible substrate.

3 is a flow chart illustrating a metal line patterning method on a substrate using nanoimprint lithography according to an embodiment of the present invention.

4 is a flow chart showing a metal line patterning method on a substrate using nanoimprint lithography according to another embodiment of the present invention.

5 is a photograph taken of a metal wire having a line width of several tens of nano units transferred into a flexible substrate by embodiments of the present invention.

FIG. 6 is a photograph showing an AFM measurement result of a metal wire having a line width of several tens of nanometers in FIG. 5. FIG.

* Brief description of symbols for the main parts of the drawings *

5, 50: stamp 7: film layer

10: first substrate 13: nano pattern

13-1: anode metal pattern portion 13-2: cathode metal pattern portion

15, 25: metal 20: second substrate

30, 300: metal wire 40: photosensitive film

100: third substrate 200: fourth substrate

Claims (19)

Forming a nanopattern 13 on the polymer first substrate 10 using ultraviolet rays and pressure; Depositing a metal (15, 25) on the entire surface of the nano-pattern (13) on the first substrate (10) and the second substrate (20) of the polymer material without the nano-pattern; And Transferring the metal 15 deposited on the embossed portion of the nanopattern 13 on the first substrate 10 to the metal 25 deposited on the second substrate 20 to form a metal line 30. Metal line patterning method on a substrate using nanoimprint lithography, characterized in that consisting of. The method according to claim 1, wherein a film layer 7 having a functional group for sticking the photoresist film 40 to the first substrate 10 and the second substrate 20 is formed. Metal line patterning method on a substrate. The shape of the nano-pattern 13 on the film layer 7 having a functional group to adhere to the photosensitive film 40 of the first substrate 10 according to claim 1 or 2 using a stamp (5). Metal line patterning method on a substrate using nanoimprint lithography, characterized in that formed by the imprint equipment. The method of claim 1 or 2, wherein the forming of the metal wire 30, Applying the photoresist film 40 to the film layer 7 having a functional group that allows the photoresist film 40 formed on the first substrate 10 to adhere well; Imprinting is performed such that the nano-pattern 13 having a predetermined line width is formed on the film layer 7 having a functional group that allows the photosensitive film 40 of the first substrate 10 to which the photosensitive film 40 is applied to adhere well. Thereby performing patterning, Depositing the metal 15 on the photosensitive film 40 having the nano pattern 13 engraved on the first substrate 10 by the patterning step; Depositing a metal (25) on the film layer (7) having a functional group to adhere the photosensitive film (40) on the second substrate (20) without a pattern, Transferring the metal 15 deposited on the embossed portion of the nanopattern 13 of the first substrate 10 to the metal 25 of the second substrate 20 having no pattern using heat and pressure; Applying the photosensitive film 40 evenly on the metal 15 pattern of the first substrate 10 so that the metal 15 is interposed between the photosensitive films 40; and using nanoimprint lithography. Metal line patterning method on a substrate. 5. The method of claim 4, wherein the applying of the photoresist film 40 comprises a film having a functional group to adhere the photoresist film 40 to the photoresist film 40 on the first substrate 10 by spin coating. A method for patterning metal lines on a substrate using nanoprint lithography, which is applied to the layer (7) or drops a certain amount. The method of claim 4, wherein when transferring the metal 15 on the first substrate 10 to the metal 25 of the second substrate 20, a force such as static electricity is used instead of heat and pressure. Metal line patterning method on a substrate using nanoimprint lithography. Transferring the nano-pattern 13 onto the third substrate 100 by applying ultraviolet rays and pressure to the stamp 50; Depositing a metal (15) on an embossed portion of the nano pattern (13) on the third substrate (100); Transferring metal (15) deposited on the embossed portion of the nanopattern (13) on the third substrate (100) onto the fourth substrate (200) using heat and pressure to form a metal line (300); And Applying the photoresist film 40 evenly on the metal 15 pattern of the third substrate 100 so that the metal 15 is interposed between the photoresist films 40, and thus, on the fourth substrate 200. Deposition of the metal wire 30 without the sacrificial layer to the metal required for the sacrificial layer, The third substrate 100 of the nano pattern 13, An anode metal pattern portion 13-1 in which a material having insulation characteristics and photosensitive to ultraviolet rays is patterned by a nanoimprint process; A metal line patterning method on a substrate using nanoimprint lithography, comprising a cathode metal pattern portion (13-2) formed by being spaced apart from each other by a predetermined distance from both sides of the anode metal pattern portion (13-1). The method of claim 7, wherein when the metal 15 of the anode metal pattern portion 13-1 of the third substrate 100 is transferred to the fourth substrate 200, a force such as static electricity, not heat and pressure, is applied. A metal line patterning method on a substrate using nanoimprint lithography. The method of claim 7, wherein the applying of the photoresist film 40 comprises applying the photoresist film 40 on the third substrate 100 by a spin coating or by dropping a predetermined amount of the nanoimprint lithography. Metal line patterning method on the used substrate. The method of claim 7, wherein the nanoimprint process is performed by reapplying a material having insulation characteristics on the cathode metal pattern part 13-2 and subjecting the photosensitive material to ultraviolet rays to perform nanoimprint lithography. . The method of claim 7, wherein when the nanoimprint process is performed by re-coating a material having an insulating characteristic on the cathode metal pattern part 13-2 and subjecting it to ultraviolet rays, a stamp having a pattern different from that of the pattern alignment system is used. Metal line patterning method on a substrate using nanoimprint lithography, characterized in that by repeatedly performing to produce a metal wire (30) inside the flexible substrate. 8. The method of patterning metal lines on a substrate using nanoimprint lithography according to claim 7, characterized in that a film layer (7) having a functional group for sticking the photosensitive film (40) is formed on the third substrate (100). The shape of the nano-pattern 13 of the film layer 7 having a functional group for adhering the photosensitive film 40 on the third substrate 100 to the stamp 50 is used. Metal line patterning method on a substrate using nanoimprint lithography, characterized in that formed by the imprint equipment. The nano imprint process according to claim 1 or 7, wherein a nano imprint process is performed on a material that is sensitive to ultraviolet rays or a material that reacts to heat by using the substrates 20 and 200 on which the nano metal pattern is transferred as a stamp. Method for patterning metal lines on a substrate using imprint lithography. According to claim 1 or 7, wherein the nano-imprint process is performed using a substrate (20, 200) to which the nano-metal pattern is transferred as a roll type imprint stamp to a material that is sensitive to ultraviolet light or a material that reacts to heat. A metal line patterning method on a substrate using nanoimprint lithography. The nanoimprint lithography according to claim 1 or 7, wherein the material of the nano pattern substrates 10 and 100 or the substrates 20 and 200 to which the nano metal pattern is transferred is made of a non-flexible substrate. Metal line patterning method on the used substrate. The method of patterning metal lines on a substrate using nanoimprint lithography according to claim 1 or 7, wherein a roll type UV-NIL is used to transfer the nanopattern to the nanopattern substrate (10, 100). The method of patterning metal lines on a substrate using nanoimprint lithography according to claim 1 or 7, wherein the nano pattern substrate (10, 100) itself is patterned using heat and pressure. 8. The nanoimprint lithography according to claim 1, wherein when removing some metals from the nano-pattern substrates 10 and 100, wiping them with an eraser using a soft material such as rubber. Metal line patterning method on the used substrate.

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