KR20110069486A - Method for forming metal electrode - Google Patents

Abstract

PURPOSE: A method for manufacturing a metal electrode is provided to form a metal electrode with a narrow line and easily form a nano pattern in a wide area by using a nano imprinting process and a self assembled monolayer. CONSTITUTION: A method for manufacturing a metal electrode comprises the following steps. A pre-sacrificial film pattern is formed on a substrate using an imprinting process(S1). The pre-sacrificial film pattern is etched to form a sacrificial film pattern having a width narrower than that of the pre-sacrificial film pattern(S2). A self assembled monolayer pattern is selectively formed on the substrate exposed by the sacrificial film pattern(S3). The sacrificial film pattern is removed(S4). A metal electrode is selectively formed on the substrate exposed by the self assembled monolayer pattern(S5).

Description

Metal electrode manufacturing method {METHOD FOR FORMING METAL ELECTRODE}

The present invention relates to a method of manufacturing a metal electrode, and more particularly to a method of manufacturing a metal electrode by a self-assembled monolayer and a nano imprinting process. The present invention is derived from a study conducted as part of the IT source technology development project of the Ministry of Knowledge Economy. [Task management number: 2008-F-024-02, Task name: Mobile flexible input and output platform].

The exposure process has a limitation in terms of resolution. Therefore, electron beam lithography, X-ray lithography, scanning probe lithography, and the like have been studied as a method to replace the exposure process since the mid 90s.

Nanoimprint lithography technology, along with ultra-ultraviolet lithography, is a patterning process technology for next-generation semiconductors of less than 45nm class, attracting attention for its low cost and mass production.

The problem to be solved by the present invention is to manufacture a transparent metal electrode that can control the permeability using a nanoimprinting process and a self-assembled monolayer.

The problem to be solved by the present invention is not limited to the above-mentioned problem, and other tasks not mentioned will be clearly understood by those skilled in the art from the following description.

Provided are a method of manufacturing a metal electrode for solving the above technical problems. In the present method, a preliminary sacrificial layer pattern is formed on a substrate by an imprinting process, the preliminary sacrificial layer pattern is etched to form a sacrificial layer pattern having a width smaller than that of the preliminary sacrificial layer pattern, and is exposed by the sacrificial layer pattern. Selectively forming a self-assembled monolayer pattern on the substrate, removing the sacrificial layer pattern, and selectively forming a metal electrode on the substrate exposed by the self-assembled monolayer pattern. .

The nano-imprinting process and the self-assembled monolayer can form a metal line having a narrow line width. In addition, the nano-pattern can be easily formed in a large area. In addition, a metal nanopattern having a narrower line width may be formed by etching the sacrificial layer. It is also possible to form a more transparent metal electrode.

Advantages and features of the present invention, and methods for achieving them will be apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

In the present specification, when a material film such as a conductive film, a semiconductor film, or an insulating film is referred to as being "on" another material film or substrate, the material film may be formed directly on another material film or substrate, or It means that another material film may be interposed between them. In various embodiments of the present specification, terms such as first, second, third, and the like are used to describe specific steps and the like, but are only used to distinguish one particular step from other steps, and the like. It should not be limited by these.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms 'comprises' and / or 'comprising' mean that the stated element, step, operation and / or element does not imply the presence of one or more other elements, steps, operations and / Or additions.

In addition, the embodiments described herein will be described with reference to cross-sectional and / or plan views, which are ideal exemplary views of the present invention. In the drawings, the thicknesses of films and regions are exaggerated for effective explanation of technical content. Accordingly, shapes of the exemplary views may be modified by manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention are not limited to the specific forms shown, but also include variations in forms generated by the manufacturing process. For example, the etched regions shown at right angles may be rounded or have a predetermined curvature. Accordingly, the regions illustrated in the figures have schematic attributes, and the shape of the regions illustrated in the figures is intended to illustrate a particular form of region of the device and not to limit the scope of the invention.

1 is a process flowchart of a metal electrode manufacturing process according to an embodiment of the present invention. 2 to 7 are cross-sectional views illustrating a metal electrode manufacturing method according to an embodiment of the present invention.

1 to 4, a preliminary sacrificial layer pattern is formed by an imprinting process (S1). Referring to FIG. 2, a sacrificial layer 110 may be formed on the substrate 100. The substrate 100 may be a glass substrate or a silicon substrate or a substrate including Au, Ag, Pd, Pt, Cu, Ni, ITO, or SiO 2. The sacrificial layer 110 may be a photoresist layer or a resin layer.

Referring to FIG. 3, a preliminary sacrificial layer pattern 115 may be formed from the sacrificial layer 110. The preliminary sacrificial layer pattern 115 may be formed by a nano imprinting process. The mold pattern 150 of the imprinting process has an inverse pattern with the preliminary sacrificial layer pattern 115 to be formed. The preliminary sacrificial layer pattern 115 to be formed by pressing the sacrificial layer 110 with the mold pattern 150 may be formed. The sacrificial layer 110 may be heated before being pressed. The sacrificial layer 110 may have fluidity by the heating. When the sacrificial layer 110 is pressed, the sacrificial layer 110 may be cured and exposed through UV. The mold pattern 150 may be silicon or quartz. An additional adhesion prevention layer (not shown) may be provided between the mold pattern 150 and the sacrificial layer 110.

Referring to FIG. 4, the mold pattern 150 is removed and the preliminary sacrificial layer pattern 115 remains on the substrate 100. The preliminary sacrificial layer pattern 115 exposes a portion of the substrate 100. The preliminary sacrificial layer pattern 115 may have a width of W1.

Referring to FIG. 5, the preliminary sacrificial layer pattern 115 may be etched to form a sacrificial layer pattern 117 whose pattern line width is controlled (S2). The etching may be performed by reactive ion etching (hereinafter referred to as RIE). The sacrificial layer pattern 117 may have a width of W2 narrower than W1 by the etching. Therefore, the line width of the metal electrode to be described below can be further reduced. That is, by adjusting the line width of the sacrificial layer pattern 117, it is possible to control the transparency of the metal electrode. The reactive ion etching may additionally remove the sacrificial material remaining on the substrate 100 between the preliminary sacrificial layer patterns 115.

Referring to FIGS. 1 and 6, a self-assembled monolayer (SAM) pattern 120 may be selectively formed on the substrate 100 exposed by the sacrificial layer pattern 117. (S3). The SAM pattern 120 may be formed by immersing the substrate 100 in a SAM solution. The SAM includes a head group that binds to the substrate 100 and a functional group that determines the surface properties (hydrophilic or hydrophobic) of the SAM. When the functional group is a silane-based material having a CH3 group, a CF3 group, and a C6H5 group, the functional group is hydrophobic. When the functional group has a COOH group, a SO3 group, an OH group, a SH group, or a NH2 group, the functional group is hydrophilic. When the substrate 100 is immersed in a SAM solution, the SAM pattern 120 is selectively formed to have a surface characteristic according to the functional group on the exposed substrate 100, the sacrificial layer pattern 117 It may not be formed on the phase. The head group of the SAM pattern 120 is a material capable of mutually bonding with the material of the substrate 100, and according to the method of the mutual bonding, a covalent chemical reaction, an ion interaction, or a charge It may be a Charge Transfer Complex reaction.

The SAM pattern 120 may be selected to have surface characteristics opposite to that of the substrate 100. That is, when the substrate 100 is hydrophilic, the SAM pattern 120 may be hydrophobic, and when the substrate 100 is hydrophobic, the SAM pattern 120 may be hydrophilic. Referring to FIGS. 1 and 7, the sacrificial layer pattern 117 may be removed to expose a portion of the substrate 100 (S4). The sacrificial layer pattern 117 may be removed by an organic solvent.

Referring to FIG. 8, the metal electrode 130 may be selectively formed by the SAM pattern 120 (S5). The metal electrode 130 may be selectively formed on the substrate 100 exposed by the SAM pattern 120. The metal solution (not shown) is supplied to the entire surface of the substrate 100 on which the SAM pattern 120 is formed. The metal solution may include metal nanoparticles that may be selectively attached to the substrate 100. The metal nanoparticles may be Ag, Au, Al or Cu particles having excellent conductivity. The supply of the metal solution may be performed by a dip coating method, a spin coating method, a casting method or a spray method.

As mentioned above, the substrate 100 and the SAM pattern 120 have opposite surface characteristics. Therefore, the metal nanoparticles in the metal solution may be selectively attached onto the substrate 100 on which the SAM pattern 120 is not formed. Thus, a pattern as shown in FIG. 8 may be formed. In another embodiment of the present invention, the metal nanoparticles in the metal solution may be selectively attached to the SAM pattern 120, not the substrate 100. In this case, the metal electrode 130 may be formed on the SAM pattern 120. After the metal electrode 130 is formed, a rinsing process may be performed. According to embodiments of the present invention, it is possible to form a metal electrode having a nano-sized line width in an easy manner without a separate alignment process. In addition, it is possible to repeat the process by the imprinting method. Further etching may increase the transparency of the metal electrode. Such metal electrodes are more conductive than conductive polymer electrodes and carbon nanotubes.

The description of the above embodiments is merely given by way of example with reference to the drawings in order to provide a more thorough understanding of the present invention, which should not be construed as limiting the invention. In addition, various changes and modifications are possible to those skilled in the art without departing from the basic principles of the present invention.

1 is a process flowchart of a metal electrode manufacturing method according to embodiments of the present invention.

2 to 8 are cross-sectional views illustrating a method of manufacturing a metal electrode according to embodiments of the present invention.

<Description of the symbols for the main parts of the drawings>

100: substrate 117: sacrificial film pattern

150: mold pattern 120: SAM pattern

130: metal electrode

Claims (1)

Forming a preliminary sacrificial layer pattern on the substrate by an imprinting process; Etching the preliminary sacrificial layer pattern to form a sacrificial layer pattern having a width narrower than that of the preliminary sacrificial layer pattern; Selectively forming a self-assembled monolayer pattern on the substrate exposed by the sacrificial layer pattern; Removing the sacrificial layer pattern; And And selectively forming a metal electrode on the substrate exposed by the self-assembled monolayer pattern.

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