KR20110064589A - Wafer cassette for high density plasma chemical vapor deposition - Google Patents

Wafer cassette for high density plasma chemical vapor deposition Download PDF

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Publication number
KR20110064589A
KR20110064589A KR1020090121262A KR20090121262A KR20110064589A KR 20110064589 A KR20110064589 A KR 20110064589A KR 1020090121262 A KR1020090121262 A KR 1020090121262A KR 20090121262 A KR20090121262 A KR 20090121262A KR 20110064589 A KR20110064589 A KR 20110064589A
Authority
KR
South Korea
Prior art keywords
cassette
vapor deposition
chemical vapor
density plasma
plasma chemical
Prior art date
Application number
KR1020090121262A
Other languages
Korean (ko)
Inventor
문정웅
Original Assignee
주식회사 동부하이텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 동부하이텍 filed Critical 주식회사 동부하이텍
Priority to KR1020090121262A priority Critical patent/KR20110064589A/en
Publication of KR20110064589A publication Critical patent/KR20110064589A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
    • H01L21/67323—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Abstract

PURPOSE: A wafer cassette for high density plasma chemical vapor deposition is provided to form a heat-resistant coating layer on one side of a slot, thereby preventing deformation due to melting. CONSTITUTION: A cassette main body(110) is made of a square plastic material whose top is opened to perform high density plasma chemical vapor deposition. A plurality of cassette slots(120) supports a plurality of wafers(20) on both sides of the cassette main body. A heat-resistant coating layer is formed on one side of a cassette slot. The heat-resistant coating layer is made of stainless steel.

Description

Wafer cassette for high density plasma chemical vapor deposition

The present invention relates to a wafer cassette for high density plasma chemical vapor deposition equipment, and more particularly to a wafer cassette for high density plasma chemical vapor deposition equipment having a heat resistant coating layer.

Generally, wafers that are put into a semiconductor manufacturing process are not processed in individual units, but are separated and processed in one wafer cassette in a bundle of 20 to 25 units. This bundle of wafers is referred to as a lot or run.

1 is a perspective view schematically showing a wafer cassette according to the prior art.

As shown in FIG. 1, when a wafer cassette carrying wafers in a lot unit is transported to a device for a corresponding process, an operator grabs a handle formed at an upper side of the wafer cassette and raises the wafer cassette to a wafer station of the device. After release, start the machine.

Then, when the operation of the equipment is started, the wafers of the lot unit mounted in the slot of the wafer cassette is taken out by the robot one by one and then loaded into the process chamber and processed.

For example, Novellus' SPEED ® equipment is a high density plasma chemical vapor deposition (HDP CVD) process, and because the wafer is finished in the process chamber, the cooling station Wafer Cooling Process (Wafer Cooling Process).

However, the SPEED ® equipment has a single cooling station, so when using three process chambers, if the wafer is cooling in the cooling station, another wafer having a deposition process is waiting for a long time in the process chamber.

Accordingly, the present invention has been made to solve the above-mentioned problems, and has a heat-resistant coating layer for high-density plasma chemical vapor deposition equipment that can prevent deformation due to melting even if the wafer of high temperature is not subjected to cooling process is loaded It is an object to provide a wafer cassette.

Wafer cassette for high density plasma chemical vapor deposition equipment of the present invention for realizing the object as described above is a cassette body made of a plastic material of the square shape of the top open to proceed the high density plasma chemical vapor deposition process; A plurality of cassette slots for supporting a plurality of wafers on both sides of the cassette body; And a heat resistant coating layer formed on one side of the cassette slot.

In addition, the heat-resistant coating layer is characterized in that made of stainless steel.

In addition, the heat-resistant coating layer is characterized in that formed to a thickness of 0.1 ~ 0.2mm.

According to the wafer cassette for high-density plasma chemical vapor deposition equipment according to the present invention, by providing a heat-resistant coating layer, there is an effect of preventing deformation due to melting even when a wafer having a high temperature is not cooled.

Hereinafter, with reference to the accompanying drawings, the configuration and operation of the preferred embodiment of the present invention will be described in detail so that those skilled in the art can easily practice.

However, the configuration and operation of the present invention shown in the drawings and described by it will be described as at least one embodiment. Therefore, the present invention may be applied to various transformations and may have various embodiments, and should be construed as including all transformations, equivalents, and substitutes included in the spirit and scope of the present disclosure.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. That is, a singular expression includes a plural expression unless the context clearly indicates otherwise.

In addition, the terms "comprise" or "having" in the present invention are intended to indicate that there exists a feature, number, step, operation, component, part, or a combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

FIG. 2 is a perspective view illustrating a wafer cassette for a high density plasma chemical vapor deposition apparatus according to an embodiment of the present invention, and FIG. 3 is an enlarged view for explaining a cassette slot portion A in which a wafer of FIG. 2 is accommodated. It is also.

As shown in FIG. 2, a wafer cassette for a high density plasma chemical vapor deposition apparatus according to an exemplary embodiment of the present invention includes a cassette body 110, a cassette slot 120, and a heat resistant coating layer 130. .

The cassette body 110 is made of a plastic material of an open top shape in order to proceed with a high density plasma chemical vapor deposition process.

The cassette slot 120 is formed with a plurality of grooves for supporting the plurality of wafers 20 on both sides of the cassette body 110.

As shown in FIG. 3, the heat resistant coating layer 130 is formed on one side of the cassette slot 120, respectively. Here, the heat resistant coating layer 130 is preferably made of stainless steel. In addition, the heat resistant coating layer 130 is preferably formed to a thickness of 0.1 ~ 0.2mm.

Since a conventional wafer cassette according to the prior art uses a plastic material or a Teflon material, the phenomenon of melting occurs when the hot wafer proceeded in the process chamber is seated.

However, according to the wafer cassette for high-density plasma chemical vapor deposition equipment according to an embodiment of the present invention, a phenomenon in which the hot wafer is melted by coating a material that can withstand a certain heat on one side of the cassette slot To prevent this.

Furthermore, the use of the wafer cassette for the high-density plasma chemical vapor deposition equipment according to an embodiment of the present invention can eliminate the cooling process of the HDP CVD equipment, thereby improving the productivity of the process equipment or UPH (unit per hour). have.

It is apparent to those skilled in the art that the present invention is not limited to the above-described embodiments and can be practiced in various ways without departing from the spirit and scope of the present invention. It is.

1 is a perspective view schematically showing a wafer cassette according to the prior art,

2 is a perspective view illustrating a wafer cassette for a high density plasma chemical vapor deposition apparatus according to an embodiment of the present invention;

3 is an enlarged view for explaining a cassette slot portion A in a state where the wafer of FIG. 2 is accommodated.

* Description of the symbols for the main parts of the drawings *

10, 100: wafer cassette 20: wafer

110: cassette body 120: cassette slot

130: heat resistant coating layer

Claims (3)

A cassette body made of a plastic material of a square shape having an open top to perform a high density plasma chemical vapor deposition process; A plurality of cassette slots for supporting a plurality of wafers on both sides of the cassette body; And a heat resistant coating layer formed on one side of the cassette slot. The wafer cassette of claim 1, wherein the heat resistant coating layer is made of stainless steel. The wafer cassette of claim 1, wherein the heat resistant coating layer is formed to a thickness of 0.1 to 0.2 mm.
KR1020090121262A 2009-12-08 2009-12-08 Wafer cassette for high density plasma chemical vapor deposition KR20110064589A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020090121262A KR20110064589A (en) 2009-12-08 2009-12-08 Wafer cassette for high density plasma chemical vapor deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090121262A KR20110064589A (en) 2009-12-08 2009-12-08 Wafer cassette for high density plasma chemical vapor deposition

Publications (1)

Publication Number Publication Date
KR20110064589A true KR20110064589A (en) 2011-06-15

Family

ID=44398003

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090121262A KR20110064589A (en) 2009-12-08 2009-12-08 Wafer cassette for high density plasma chemical vapor deposition

Country Status (1)

Country Link
KR (1) KR20110064589A (en)

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