JP2008010721A - Manufacturing method and manufacturing equipment of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device and manufacturing equipment of the semiconductor device, wherein a productivity can be more enhanced than conventionally. <P>SOLUTION: When a plurality of wafers for products are simultaneously filmed by use of a batch-type vertical hot wall LPCVD device, in an inside of a boat 2 for holding a plurality of wafers by laminating them to a direction perpendicular to the surface of the wafer, the plurality of wafers for products are loaded in a product processing region where a temperature is uniform. In a state that a side dummy wafer 1b for holding a temperature of the product processing region uniform is loaded in a region adjacent to the product processing region, the plurality of wafers are simultaneously filmed for products. Then, the wafers for products are exchanged by the other wafers for products. But, the side dummy wafer 1b is not taken out from the boat 2, and the side dummy wafer 1b is moved in the boat 2 so that the boat 2 is taken off from the side dummy wafer 1b. Then, the side dummy wafer 1b is again placed on the boat 2. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method of manufacturing a semiconductor device that simultaneously performs substrate processing such as heat treatment and film formation processing on a plurality of semiconductor substrates, and to a manufacturing apparatus of a semiconductor device that can be used for implementing this manufacturing method.

  As a semiconductor device manufacturing apparatus that simultaneously performs substrate processing such as heat treatment and film formation processing on a plurality of semiconductor substrates (hereinafter referred to as wafers), for example, CVD used in a film formation processing step in the semiconductor device manufacturing process There is a heat treatment apparatus used in an apparatus, a thermal diffusion process, an annealing process, or the like (for example, see Patent Document 1).

  Such a semiconductor device manufacturing apparatus is a means for holding a wafer during substrate processing, and is provided with a predetermined interval between the wafers, and a wafer holding means for stacking a plurality of wafers in a direction perpendicular to the wafer surface (hereinafter referred to as a wafer holding means) Called a boat).

At the time of substrate processing, in order to make the processing conditions such as the temperature of the product wafer in the boat uniform, a processing condition adjusting wafer (hereinafter referred to as a side dummy) is placed in the boat next to the product processing region. Substrate processing is performed in a state where a wafer is loaded. As the side dummy wafer, for example, a wafer made of the same material as that of a product wafer such as silicon is used.
JP-A-2005-116734

  For example, in the film forming process in the semiconductor device manufacturing process, a thin film is formed on the product wafer by performing the film forming process with the product wafer and the side dummy wafer loaded in the boat. Is done. Then, after the film formation process, the wafer for product is removed from the boat by the wafer transfer means and transferred to the cassette for wafer transfer. The product wafer is transferred to the next process while being held in the cassette.

  At this time, it is not necessary to take out the side dummy wafer from the boat and send it to the next process. In the state where the side dummy wafer is loaded into the boat, a new product wafer can be loaded into the boat and the film forming process can be continuously performed. In this case, as shown in FIG. 4, a product 31 is formed between the boat 2 and the side dummy wafer 1b in the holding portion 22 for holding the side dummy wafer 1b of the boat 2, and the boat 2 and the side dummy wafer 1b are fixed. The side dummy wafer 1b cannot be taken out from the boat 2. FIG. 4 is a cross-sectional view of a portion of the boat 2 that holds the side dummy wafer 1b when the side dummy wafer 1b is loaded on the boat 2. If the side dummy wafer is forcibly taken out, the side dummy wafer is damaged and the LPCVD apparatus is damaged, resulting in a problem that the productivity is significantly reduced.

  For this reason, after the film forming process, the side dummy wafer is removed from the boat by the wafer transfer means and transferred to the side dummy cassette in the same manner as the product wafer. Then, before the next film formation process, the side dummy wafer is transferred from the side dummy cassette to the boat by the wafer transfer means. In this way, the film forming process is performed again. In the conventional semiconductor device manufacturing apparatus, such operation control is performed.

  In addition, after the film formation process, the side dummy wafer is transferred to the side dummy cassette. When the film formation process is continuously performed a plurality of times, the side dummy wafer thermally expands, so that the side dummy wafer for the boat is transferred. This is because the side dummy wafer falls from the boat and is prevented from occurring. That is, once the side dummy wafer is accommodated in the side dummy cassette, and the side dummy wafer is supported again by the wafer transfer means, the support position of the side dummy wafer with respect to the wafer transfer means is corrected to the normal position. This is because the position of the side dummy wafer relative to the boat can be corrected.

  On the other hand, in the heat treatment process such as the thermal diffusion process and the annealing process in the manufacturing process of the semiconductor device, a plurality of product wafers and side dummy wafers are loaded in the boat as described above in the same manner as the film formation process. After the heat treatment is performed on the product wafer, the product wafer is removed from the boat by the wafer transfer means and transferred to the wafer transfer cassette.

  At this time, if the heat treatment is performed a plurality of times without removing the side dummy wafer from the boat, the side dummy wafer is thermally expanded in the same manner as described above, thereby causing a shift in the position of the side dummy wafer with respect to the boat. The side dummy wafer is also removed from the boat by the wafer transfer means and transferred to the side dummy cassette. Then, before the next heat treatment, the side dummy wafer is transferred from the side dummy cassette to the boat by the wafer transfer means. In this way, the heat treatment is performed again.

  However, as described above, each time the film forming process or heat treatment of the product wafer is completed, the side dummy wafer is taken out of the boat, and the side dummy wafer is returned to the boat again before the next film forming process or heat treatment. While the operation is being performed, substrate processing such as film formation or heat treatment cannot be performed. In other words, since these operations are also included in one substrate processing, the time required for one substrate processing becomes long, and the productivity is poor.

  In view of the above points, an object of the present invention is to provide a method for manufacturing a semiconductor device and a device for manufacturing a semiconductor device, which can improve productivity as compared with the related art.

  In order to achieve the above object, in the method of manufacturing a semiconductor device according to the present invention, after performing the substrate processing step, the step of lowering the product semiconductor substrate from the holding means and holding the other product semiconductor substrate on the holding means; After performing the substrate processing step, the temperature adjustment semiconductor substrate is moved in the holding means so as to separate the temperature adjusting semiconductor substrate from the portion of the holding means that contacts the temperature adjustment semiconductor substrate, and then the temperature adjustment is performed. And a step of holding the semiconductor substrate for holding by the holding means.

  In the present invention, when the substrate processing on the product semiconductor substrate is completed as described above, the temperature adjustment semiconductor substrate is moved in the holding means without taking the temperature adjustment semiconductor substrate out of the holding means. Therefore, the time required for one product process can be shortened as compared with the case where the temperature adjusting semiconductor substrate is taken out of the holding means and returned to the holding means again.

  Note that either the step of replacing the product semiconductor substrate or the step of moving the temperature adjustment semiconductor substrate may be performed first.

  Specifically, when the temperature adjustment semiconductor substrate (1b) is moved in the holding means (2), for example, after the temperature adjustment semiconductor substrate is lifted, an operation of lowering the temperature adjustment semiconductor substrate can be performed. . Further, for example, after the temperature adjustment semiconductor substrate is lifted, the temperature adjustment semiconductor substrate can be rotated to lower the temperature adjustment semiconductor substrate.

  In the semiconductor device manufacturing apparatus according to the present invention, after the substrate processing, the temperature adjusting semiconductor substrate is held in the holding means so as to separate the temperature adjusting semiconductor substrate from the portion of the holding means that contacts the temperature adjusting semiconductor substrate. It is characterized by comprising a separating means for holding the temperature adjusting semiconductor substrate by the holding means after the movement.

  By using this apparatus, the method for manufacturing a semiconductor device according to the present invention can be implemented. For example, the present invention can be applied to a semiconductor manufacturing apparatus (CVD apparatus) that simultaneously forms thin films on a plurality of semiconductor wafers by chemical vapor deposition.

  In addition, the code | symbol in the bracket | parenthesis of each means described in the claim and this column is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

(First embodiment)
In the present embodiment, an example will be described in which the present invention is applied to a multiple wafer simultaneous film formation apparatus (hereinafter referred to as a batch type CVD apparatus) by a chemical vapor deposition method as a semiconductor device manufacturing apparatus. In FIG. 1, schematic structure of the batch type CVD apparatus in 1st Embodiment of this invention is shown.

  The batch type CVD apparatus according to the present embodiment is a vertical hot wall LP (decompression type) CVD apparatus, and is used at the time of film formation as shown in FIG. 1, and is a boat as a holding means for holding a plurality of wafers 1. 2, a boat 2 is accommodated therein, and a furnace body 3 as a processing chamber for performing film formation processing on the wafer 1 held in the boat 2, and disposed around the furnace body 3 and held in the boat 2 A heater 4 as a heating means for heating the wafer 1, a gas introduction pipe 5 for introducing a raw material gas for film formation into the furnace body 1, and gas exhaust for exhausting gas from the inside of the furnace body 1 to the outside A pipe 6, a pump 7 connected to the gas exhaust pipe 6 for exhausting gas from the inside of the furnace body 1, and a wafer transfer device 8 as a transfer means for transferring a wafer are mainly provided. .

  Here, the boat 2 is a vertical type, and a plurality of wafers 1 are held in a state where a plurality of wafers 1 are stacked in a vertical direction (vertical direction in the drawing) with a predetermined interval between the wafers 1. . When the wafer 1 is held on the boat 2, the plurality of wafers 1 are stacked in a direction perpendicular to the wafer surface.

  The boat 2 is moved up and down by an elevator mechanism between the inside of the furnace body 3 and a position below the furnace body 3 as indicated by arrows in the drawing. For example, the boat 2 rises and is inserted into the furnace body 3 at the time of the film formation process, and descends below the furnace body 3 and comes out of the furnace body 3 when the film formation process is completed. It is.

  Further, when the boat 2 is housed in the furnace body 3 and a film forming process is being performed, a region where the film forming process conditions such as temperature and gas flow are uniform and a region within the furnace body 3 are uneven. Exists. For this reason, the product wafer 1a to be a product is held in an area 2a (hereinafter referred to as a product processing area) 2a of the boat 2 where the film forming process conditions are uniform, and is located on both upper and lower sides of the area 2a. Side dummy wafer 1b as a temperature adjusting semiconductor substrate is held in regions 2b and 2c (hereinafter referred to as upper side dummy region 2b and lower side dummy region 2c) where the film forming process conditions are not uniform.

  For example, in the boat 2, 150 product wafers 1a are held in the product processing area 2a, and 7 side dummy wafers 1b are held in the upper side dummy area 2b and the lower side dummy area 2c, respectively. Is done. The product processing area 2a and the side dummy areas 2b and 2c in the boat 2 are determined by measuring the internal temperature of the furnace body 3, and for example, an area lower than the set temperature is set as a side dummy area.

  FIG. 2 shows a partially enlarged perspective view of the boat. As shown in FIG. 2, a plurality of pillars 21 are provided, and the pillars 21 are provided with grooves 22 as holding parts for holding the wafer 1. The wafer 1 is held by inserting the wafer 1 into the groove 22. As shown in FIG. 2, for example, when there are four support columns, the wafer 1 is held at four locations.

  As shown in FIG. 1, the wafer transfer device 8 is provided with a tweezer 9 as a wafer mounting tool that directly supports the wafer 1. The movements of the wafer transfer device 8 and the tweezer 9 are program-controlled by a wafer transfer device controller 10. Basically, the wafer transfer device 8 is movable in the vertical direction (up and down direction in the figure) and the horizontal direction (left and right direction in the figure) as indicated by the arrows in the figure, and along the height direction of the boat 2. A product cassette 11 as a container for storing a plurality of product wafers 1a before or after the film forming process and a side dummy wafer cassette 12 for storing side dummy wafers 1b, and a boat. Move between two. The tweezer 9 operates by the operation of the wafer transfer device 8. The tweezer 9 may be provided with a movable mechanism in the vertical direction and the left-right direction independently of the wafer transfer device 8.

  Next, a film forming process using the LPCVD apparatus having the above configuration will be described.

  First, the product wafer 1a and the side dummy wafer 1b are loaded into the boat 2 (see FIG. 1). At this time, with the boat 2 positioned below the furnace body 3, the product wafer 1 a is transferred from the product cassette 11 to the product processing area 2 a of the boat 2 by the wafer transfer device 8 and side dummy The side dummy wafer 1b is transferred from the wafer cassette 12 to the upper and lower side dummy areas 2b and 2c of the boat 2 by the wafer transfer device 8. Then, the boat 2 is raised and the boat 2 is inserted into the furnace body 3.

  Thereafter, a film forming process is performed on the product wafer 1a. Specifically, the inside of the furnace body 3 is depressurized by the pump 5, the product wafer 1 a inside the furnace body 3 is heated by the heater 4, and the film forming gas is supplied from the gas introduction pipe 5 to the furnace body 3. It is introduced inside for a certain time. At this time, since the side dummy wafer 1b is loaded in the upper and lower side dummy regions 2b and 2c, processing conditions such as temperature and gas flow (gas flow rate and gas concentration) are present in the product processing region 2a of the boat 2. It becomes uniform. As a result, desired thin films are simultaneously formed on the plurality of product wafers 1a.

  After the film forming process, the boat 2 is lowered from the furnace body 3, the product wafer 1 a is taken out from the boat 2 by the wafer transfer device 8, and the product wafer 1 a is transferred to the product cassette 11. Thereafter, the product wafer 1a is transferred to the next step together with the product cassette 11. In this way, one film formation process is completed.

  Then, another product wafer 1a is transferred from the other product cassette 11 to the boat 2, and the next film forming process is performed. In this way, the above film forming process is repeatedly performed.

  Here, handling of the side dummy wafer 1b will be described. After the film forming process, the product wafer 1a is taken out from the boat 2, but the side dummy wafer 1b is not taken out from the boat 2, but is in contact with the side dummy wafer 1b of the boat 2, and the side dummy wafer 1b. After the side dummy wafer 1b is moved in the boat 2 so as to be separated from each other, the side dummy wafer 1b is placed on the boat 2 again. This is performed, for example, before the product wafer 1a loaded in the boat 2 is replaced with another product wafer 1a.

  3A to 3E are sectional views for explaining the movement of the tweezer 9 and the side dummy wafer 1b at this time.

  Specifically, as shown in FIG. 3A, the wafer transfer device 8 is moved to position the tweezer 9 below the side dummy wafer 1b.

  Subsequently, as shown in FIG. 3B, the tweezer 9 is brought into contact with the side dummy wafer 1b by moving the wafer transfer device 8 upward.

  Subsequently, as shown in FIG. 3C, the side dummy wafer 1b is scooped up on the spot by the tweezer 9 by moving the wafer transfer device 8 slightly in the upward direction without moving in the horizontal direction. At this time, the groove 22 of the boat 2 has a clearance capable of lifting the side dummy wafer 1b. For example, when the length of one groove 22 in the vertical direction is 4.5 mm and the thickness of the side dummy wafer 1b is 0.625 mm, the side dummy wafer 1b is raised by 1 to 2 mm.

  In addition, since the position of the side dummy wafer 1b in the boat 2 may be shifted due to thermal expansion of the side dummy wafer 1b, it is possible to align the side dummy wafer 1b with respect to the boat 2 simply by lifting the side dummy wafer 1b. In addition, it is preferable to provide an alignment groove on the wafer holding surface of the tweezer 9. As a result, when the side dummy wafer 1b is lifted by the tweezer 9, the side dummy wafer 1b is moved (for example, centered) on the holding surface of the tweezer 9 along the alignment groove. Can be returned to the normal position.

  Subsequently, as shown in FIG. 3 (d), the wafer transfer device 8 is moved downward, and the tweezer 9 is moved downward to immediately return the side dummy wafer 1 b to the boat 2.

  Subsequently, as shown in FIG. 3E, after the wafer transfer device 8 is further moved downward so that the tweezer 9 separates the side dummy wafer 1b, the wafer transfer device 8 is returned to the original position. return.

  The step of slightly separating the side dummy wafer 1b and the boat 2 in this way is performed every time the film forming process is completed once. Thereby, sticking of the side dummy wafer 1b and the boat 2 can be prevented.

  The operation of the wafer transfer device 8 described above is performed every time the film forming process is completed, the side dummy wafer 1b is transferred from the boat 2 to the side dummy cassette 12, and before the next film forming process, This can be implemented by changing the conventional side dummy wafer 1b handling control program for transferring the side dummy wafer 1b from the side dummy cassette 12 to the boat 2. That is, (1) the tweezer 9 is positioned below the side dummy wafer 1b, (2) the side dummy wafer 1b is scooped up by the tweezer 9, and (3) the tweezer 9 is moved in the horizontal direction as it is. Is transferred from the boat 2 to the cassette 11, and again (4) the side dummy wafer 1b is placed on the tweezer 9 and taken out from the cassette 11, and the side dummy wafer 1b is moved to the position of the groove 22 of the boat 2, (5 ) Move the tweezer 9 downward to hold the side dummy wafer 1b on the boat 2, and (6) For the side dummy wafer 1b handling control to return the tweezer 9 to the original position, (3), (4) Make changes that are omitted.

  As described above, in this embodiment, when the film forming process on the product wafer 1a is completed, the side dummy wafer 1b and the boat 2 are separated without taking the side dummy wafer 1b out of the boat 2. Thus, since the side dummy wafer 1b is slightly moved in the boat 2, as compared with the case where the side dummy wafer 1b is taken out of the boat 2 and returned to the boat 2 as in the prior art, Since it becomes unnecessary to transfer the side dummy wafer 1b to the cassette 11 outside the furnace and insert it again into the boat 2, the time required for one product processing can be shortened. As a result, the throughput of the LPCVD apparatus can be improved.

  When a product is generated on the side dummy wafer 1b to some extent, the side dummy wafer 1b is replaced. At this time, the above-described controls (1) to (6) are performed.

(Other embodiments)
(1) In the above-described embodiment, the case where the step of slightly moving the side dummy wafer 1b in the boat 2 is performed every time the film forming process is completed is described as an example. The processing may be carried out after performing the processing a plurality of times (counting once when the product wafer is replaced). However, it is performed at a frequency that can prevent the side dummy wafer 1b from sticking to the boat 2.

  (2) In the above-described embodiment, as shown in FIGS. 3A to 3E, the side dummy wafer 1b is moved as a movement of the side dummy wafer 1b and the boat 2 to prevent the product from sticking. Although the operation of raising and lowering the wafer 1b has been described as an example, a rotation operation may be added between the raising and lowering. That is, as shown in FIG. 3C, after the side dummy wafer 1b is lifted, the side dummy wafer 1b is rotated in that state, and then the side dummy wafer 1b is turned as shown in FIG. You may make it return to the boat 2. FIG.

  As a result, when the positional deviation occurs in the side dummy wafer 1b due to thermal expansion and the position of the orientation flat matches the position of the column 21 of the boat 2, the side dummy wafer 1b is held in the boat 2. However, such a situation can be avoided by rotating the side dummy wafer 1b and returning it to the normal position.

  Further, as described above, the side dummy wafer 1b is supported by the boat 2 at a plurality of locations (four locations in FIG. 2), and the product 31 is generated at the supported locations. By rotating the dummy wafer 1b and intentionally changing the contact position between the side dummy wafer 1b and the boat 2, the generation location of the product 31 on the side dummy wafer 1b can be changed. Thereby, compared with the case where the side dummy wafer 1b is not rotated, the same side dummy wafer 1b can be used for a long period of time, and the replacement time of the side dummy wafer 1b can be delayed.

  Such an operation of rotating the side dummy wafer 1b is, for example, not shown, but a rotation pin is provided on the wafer holding surface of the tweezer 9, the side dummy wafer 1b is lifted by the tweezer 9, and the rotation pin is also used. This can be implemented by lifting the wafer and rotating the rotation pins.

  The movement of the side dummy wafer 1b is not limited to these, and other movements may be used as long as the side dummy wafer 1b does not come out of the boat 2. The range which does not come out of the inside of the boat 2 here means a range where the side dummy wafer 1b is located in the groove 22 as a holding portion of the boat 2.

  (3) In the above-described embodiment, the case where the product wafer 1a and the side dummy wafer 1b are moved by one wafer transfer device 8 has been described as an example, but the product wafer 1a and the side dummy wafer are moved. You may install the wafer transfer machine 8 for 1b separately.

  (4) In the above-described embodiment, the batch type vertical hot wall LPCVD apparatus has been described as an example. However, the present invention is not limited to this, and the present invention can be applied to an apparatus in which the vertical type is changed to a horizontal type and other types of CVD apparatuses. Applicable. Further, the present invention is not limited to a CVD apparatus, and can be applied to all semiconductor device manufacturing apparatuses that perform substrate processing for simultaneously heat-treating a plurality of product wafers.

It is the schematic which shows the whole structure of the batch type vertical hot wall LPCVD apparatus in 1st Embodiment of this invention. FIG. 2 is a partially enlarged perspective view of a boat 2 in FIG. 1. It is sectional drawing for demonstrating the motion of the tweezer 9 and the side dummy wafer 1b after a film-forming process. It is an expanded sectional view of the part holding the side dummy wafer of the boat when the film forming process is continuously performed without taking out the side dummy wafer from the boat.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Wafer, 1a ... Product wafer, 1b ... Side dummy wafer,
2 ... boat, 3 ... furnace body, 4 ... heater, 5 ... gas introduction pipe, 6 ... gas exhaust pipe,
7 ... Pump, 8 ... Wafer transfer machine, 9 ... Tweezer, 10 ... Controller for wafer transfer machine.

Claims (7)

A semiconductor device comprising: a holding unit (2) for stacking and holding a plurality of semiconductor substrates (1) in a direction perpendicular to the substrate surface; and a heating unit (4) for heating the semiconductor substrate held by the holding unit. Using production equipment,
A plurality of product semiconductor substrates (1a) are loaded in a product processing region (2a) in which the temperature is uniform in the holding means, and the product processing region is placed in a region (2b, 2c) adjacent to the product processing region. A semiconductor device manufacturing method comprising a substrate processing step of simultaneously heating the plurality of product semiconductor substrates by the heating means in a state in which a temperature adjustment semiconductor substrate (1b) for maintaining a uniform temperature is loaded. There,
A step of lowering the product semiconductor substrate from the holding means and holding another product semiconductor substrate on the holding means after performing the substrate processing step;
After performing the substrate processing step, the temperature adjusting semiconductor substrate is moved in the holding means so as to separate the temperature adjusting semiconductor substrate from the portion of the holding means that contacts the temperature adjusting semiconductor substrate. And a step of holding the temperature adjusting semiconductor substrate by the holding means. When the temperature adjusting semiconductor substrate (1b) is moved in the holding means (2), the temperature adjusting semiconductor substrate is lifted and then the temperature adjusting semiconductor substrate is lowered. Item 14. A method for manufacturing a semiconductor device according to Item 1. When the temperature adjusting semiconductor substrate (1b) is moved in the holding means (2), after the temperature adjusting semiconductor substrate is lifted, the temperature adjusting semiconductor substrate is rotated to move the temperature adjusting semiconductor substrate. The method of manufacturing a semiconductor device according to claim 2, wherein a lowering operation is performed. Holding means (2) for laminating and holding a plurality of semiconductor substrates (1) in a direction perpendicular to the substrate surface;
Heating means (4) for heating the semiconductor substrate held by the holding means;
Transfer means (8, 9, 10) for transferring the semiconductor substrate (1) between the holding means and a container (11, 12) for transferring the semiconductor substrate in which the semiconductor substrate (1) is accommodated. )
A plurality of product semiconductor substrates (1a) are loaded in a product processing region (2a) in which the temperature is uniform in the holding means, and the product processing region is placed in a region (2b, 2c) adjacent to the product processing region. In a semiconductor device manufacturing apparatus for performing substrate processing by simultaneously heating the plurality of product semiconductor substrates by the heating means in a state in which a temperature adjustment semiconductor substrate (1b) for uniformly maintaining the temperature of the product is loaded. There,
After the substrate processing, the temperature adjusting semiconductor substrate is moved in the holding means so as to separate the temperature adjusting semiconductor substrate from the portion of the holding means that contacts the temperature adjusting semiconductor substrate, An apparatus for manufacturing a semiconductor device, comprising: separating means for holding the temperature adjusting semiconductor substrate by the holding means. 5. The semiconductor device manufacturing apparatus according to claim 4, wherein the transfer means (8, 9, 10) functions as the separating means. The pull-off means operates to lower the temperature adjustment semiconductor substrate after lifting the temperature adjustment semiconductor substrate (1b) in the holding means (2). Item 6. The semiconductor device manufacturing apparatus according to Item 4 or 5. In the holding means (2), the pulling-off means operates to lower the temperature adjusting semiconductor substrate by rotating the temperature adjusting semiconductor substrate after lifting the temperature adjusting semiconductor substrate (1b). The apparatus for manufacturing a semiconductor device according to claim 6, wherein:

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