KR20110063049A - Plasma process apparatus and ground device thereof - Google Patents

Plasma process apparatus and ground device thereof Download PDF

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Publication number
KR20110063049A
KR20110063049A KR1020090119983A KR20090119983A KR20110063049A KR 20110063049 A KR20110063049 A KR 20110063049A KR 1020090119983 A KR1020090119983 A KR 1020090119983A KR 20090119983 A KR20090119983 A KR 20090119983A KR 20110063049 A KR20110063049 A KR 20110063049A
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KR
South Korea
Prior art keywords
susceptor
vacuum chamber
ground portion
ground
plasma processing
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Application number
KR1020090119983A
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Korean (ko)
Inventor
김성은
안상언
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엘지디스플레이 주식회사
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Priority to KR1020090119983A priority Critical patent/KR20110063049A/en
Publication of KR20110063049A publication Critical patent/KR20110063049A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

PURPOSE: A plasma processing apparatus and a grounding apparatus for the same are provided to stop the progress of cracks generated in a grounding part by forming a plurality of holes in the grounding part. CONSTITUTION: A plasma processing apparatus includes a vacuum chamber. A loading port is formed at one side of the vacuum chamber. An observing port and a window are formed at another side of the vacuum chamber. An upper cover is formed at the upper side of the vacuum chamber. A vacuum pump is installed at the bottom side of the vacuum chamber. A gas distributing plate is arranged at the lower side of a lower cover. A gas supplying part is installed at the outside of the vacuum chamber. A plurality of holes is formed in the gas distributing plate. A grounding part(115) is attached to a susceptor(114) using an electronic bar(118a).

Description

Plasma processing apparatus and its grounding equipment {PLASMA PROCESS APPARATUS AND GROUND DEVICE THEREOF}

The grounding apparatus of the plasma processing apparatus of the present invention, the grounding apparatus of the plasma processing apparatus that can prevent the ground portion is disconnected by forming a plurality of holes in the plate-shaped grounding portion to stop the progress of cracks generated in the grounding portion It is about.

In display devices, particularly flat panel displays such as liquid crystal display devices, each pixel includes an active device such as a thin film transistor to drive the display device. The driving method is often called an active matrix driving method. In the active matrix method, the active elements are arranged in each pixel arranged in a matrix to drive the pixel.

The liquid crystal display device is an apparatus for displaying information on a screen using refractive anisotropy. The liquid crystal display device individually supplies data signals according to image information to a plurality of liquid crystal cells arranged in a matrix, and transmits light transmittance of the liquid crystal cell. Is a display element capable of displaying a desired image. The liquid crystal display device includes a color filter substrate and a thin film transistor array substrate facing each other, and a liquid crystal layer formed between the color filter substrate and the thin film transistor array substrate.

Further, on the thin film transistor array substrate of the liquid crystal display device, a plurality of data lines to which data signals are input from the outside and a plurality of gate lines to transmit scan signals to which a scan signal is supplied to the liquid crystal cell are orthogonal to each other. The pixel region is defined at each intersection of the line and the gate line. Common electrodes and pixel electrodes are formed on opposite inner surfaces of the color filter substrate and the thin film transistor array substrate to apply an electric field to the liquid crystal layer.

By controlling the voltage applied to the pixel electrode while the voltage is applied to the common electrode, the light transmittance of the pixel region can be individually adjusted. As described above, in order to control the voltage applied to the pixel electrode for each pixel region, a thin film transistor which is used as a switching element is formed in each pixel region.

In the thin film transistor, various electrodes, semiconductor layers, and insulating layers are formed. Each of the electrodes, semiconductor layers, and insulating layers is formed in a vacuum state. In particular, in order to form a semiconductor layer and an insulating layer, plasma enhanced chemical vapor deposition (Plasma Enhanced Chromatographic Vapor Deposition) is mainly used. A conventional plasma processing apparatus used in the plasma enhanced vapor deposition method is described below.

1 is a view showing a conventional plasma processing apparatus.

As shown in FIG. 1, the conventional plasma processing apparatus 1 includes a vacuum chamber 10, a susceptor 14 provided in the vacuum chamber 10, and a substrate loaded thereon, and the stem 22 through the stem 22. A lift part 20 connected to the susceptor 14 to move the susceptor 14 up and down, and disposed on the susceptor 14 and having a plurality of holes 25 formed from the gas supply part 40. A gas distribution plate 23 for equally supplying the supplied gas to the inside of the chamber 10, and a ground part 15 installed between the vacuum chamber 10 and the susceptor 14 to ground the susceptor 14. It is composed of

An RF power supply 42 is installed outside the vacuum chamber 10 to apply RF power to the gas distribution plate 23, and the susceptor 14 is connected to the vacuum chamber 10 through the ground 15. Since it is electrically connected to the bottom of the ground and the gas is supplied from the gas supply unit 40 through the hole 25 of the gas distribution plate 23, between the gas distribution plate 23 and the susceptor 14 The gas is excited to form a plasma state. At this time, the gas is mainly supplied with a mixed gas of silane (SiH 4 ) or hydrogen (H 2 ) (when depositing silicon) or a mixed gas of silane, ammonia (NH 3 ) and nitrogen (N 2 ) (silicon). When depositing nitride).

However, the conventional plasma processing apparatus having the above structure has the following problems, which will be described below.

A plurality of grounding portions 15 of the plasma processing apparatus shown in FIG. 1 are installed between the susceptor 14 and the bottom of the vacuum chamber 10 to ground the susceptor 14. As shown in FIG. 2, the ground portion 15 has a plate shape, and both ends thereof are attached to the susceptor 14 and the vacuum chamber 10, respectively. At this time, since the ground portion 15 is formed in a thin plate shape and has elasticity, as shown in FIG. 1, when the susceptor 14 is raised or lowered by the lift portion 20, the ground portion ( 15) is bent and extended so that both ends are always attached to the susceptor 14 and the vacuum chamber 10 so that the susceptor 14 can be grounded.

However, as the susceptor 14 is repeatedly raised and lowered, the ground portion 15 is folded and unfolded, which is folded because the ground portion 15 is formed in a thin plate shape as described above. As the spreading is repeated, a stress is repeatedly applied to the ground portion 15, so that a crack c is generated in the ground portion 15 as shown in FIG. This crack (c) proceeds in the ground portion 15 as time passes, so that the ground portion 15 is completely disconnected along the width direction. When the ground portion 15 is disconnected in this manner, the susceptor 14 is not grounded, and thus a defect occurs when the semiconductor processing layer 1 forms the semiconductor layer or the insulating layer.

SUMMARY OF THE INVENTION The present invention has been made in view of the above, and provides a plasma processing apparatus capable of preventing the ground portion from being disconnected by forming a plurality of holes in the plate-shaped ground portion to stop the progress of cracks occurring in the ground portion. The purpose.

In order to achieve the above object, the plasma processing apparatus according to the present invention comprises a vacuum chamber for maintaining a vacuum state; A susceptor in which the substrate loaded and loaded in the vacuum chamber is located; A gas distribution plate disposed above the susceptor in the vacuum chamber to uniformly distribute the gas supplied from the outside into the vacuum chamber, and to which external power is applied; And a space formed in a plate shape to stop the crack when a crack occurs, and is installed between the susceptors and the bottom of the vacuum chamber to ground the susceptor.

The space includes a plurality of holes disposed along the longitudinal direction of the ground portion and alternately disposed in the width direction, or a plurality of slits disposed along the length direction of the ground portion at predetermined intervals.

In the present invention, by forming a plurality of holes in the plate-shaped ground portion to stop the progress of the crack generated in the ground portion it is possible to prevent the ground portion is disconnected. Therefore, it is possible to prevent the plasma processing apparatus from being stopped for a long time due to frequent replacement of the ground portion, and to reduce the time and manpower required for replacement.

Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.

4 is a view showing a plasma processing apparatus according to the present invention.

As shown in FIG. 4, the plasma processing apparatus 101 according to the present invention includes a vacuum chamber 110 having a bottom surface and a side wall. The vacuum chamber 110 is made of a metal such as aluminum and electrically grounded. A loading port 116 is formed on one side of the vacuum chamber 110. The loading port 116 is for loading the substrate into the vacuum chamber 110 by an external transfer device such as a robot. In addition, the observation port 112 and the window 113 is formed on the other side of the vacuum chamber 110 to observe the processing status inside the vacuum chamber 110.

An upper cover 132 is provided at an upper portion of the vacuum chamber 110 to seal the vacuum chamber 110. However, the upper cover 132 may be separated from the vacuum chamber 110 for repair or cleaning of the vacuum chamber 110. A vacuum pump 111 is installed at the bottom of the vacuum chamber 110 to make the interior of the vacuum chamber 110 in a vacuum state. The gas distribution plate 123 is disposed below the lower cover 132 and supported by the upper cover 132, and the gas supply unit 140 is installed outside the vacuum chamber 110 to cover the upper cover 132. Gas is supplied into the vacuum chamber 110 through the passage formed in the).

A plurality of holes 125 are formed in the gas distribution plate 123 disposed inside the vacuum chamber 110, and when the gas is supplied from the gas supply unit 140, the gas flows through the holes 125. ) Evenly distributed inside. At least the front portion of the gas distribution plate 123 is generally formed of a metal such as aluminum, but is electrically insulated from the top surface of the cover 132 and the wall of the vacuum chamber 110, and electrically by the RF power supply 142. Biased.

A susceptor 114 is disposed below the gas distribution plate 123 in the vacuum chamber 110. The susceptor 114 faces the gas distribution plate 123, and a substrate 201 to be subjected to plasma treatment is disposed on the susceptor 114. Since the substrate forming the conventional liquid crystal display device is a quadrangular shape, the susceptor 114 on which the rectangular substrate 201 is placed is typically formed in a quadrangular shape, but as the demand for liquid crystal display devices having various shapes increases in recent years, The susceptor 114 may be formed in various shapes.

The stem 122 is installed below the susceptor 114, and the stem 122 is connected to the lift part 120 at the bottom. The stem 122 is connected to the stem 122 through the bottom of the vacuum chamber 110, wherein the stem 122 and the bottom of the vacuum chamber 110 are sealed. The lift unit 120 includes a driving motor to vertically raise and lower the stem 122 and the susceptor 114.

A lift pin 119 is installed at the susceptor 114. The lift pin 119 protrudes above the susceptor 114 to support the substrate 201 when the substrate is loaded through the loading port 116. After the substrate 201 is loaded, when the susceptor 72 is lifted by the lift unit 119, the substrate 201 is seated on the susceptor 114 and the substrate 201 is gas-distributing plate 123. Are opposed to near.

The susceptor 114 has a metal layer serving as a ground electrode different from the RF biased gas distribution plate 123. Therefore, when the RF power supply unit 142 electrically biases the gas distribution plate 123, the gas supplied between the gas distribution plate 123 and the susceptor 114 is excited with the RF plasma, and the excited plasma Activate the chemical reactions involved in chemical vapor deposition of the desired layer on the substrate 201.

The susceptor 114 is connected to the bottom surface of the vacuum chamber 110 by the ground portion 115. At this time, since the vacuum chamber 110 is grounded, the susceptor 114 connected to the bottom surface of the vacuum chamber 110 through the ground portion 115 is also grounded. In the figure, the ground portion 114 is provided only on both sides, but this is for the purpose of briefly showing the figure. In practice, the grounding portion 115 is installed throughout the susceptor 114, and in particular, dozens, hundreds, or more may be installed depending on the size of the substrate 201, that is, the size of the susceptor 114. will be.

5 is a diagram illustrating a structure in which the ground unit 115 is installed in the susceptor 114. As shown in FIG. 5, the ground portion 115 is attached to the susceptor 114 by an electronic bar 118a. That is, the ground part 115 is fastened by fastening the susceptor 114 and the electric bar 118a by the bolt 118b while the ground part 115 is disposed between the electric bar 118a and the susceptor 114. ) And is fixed between the electric bar (118a).

6 is a view showing a ground unit 115 according to the present invention. As shown in FIG. 6, the ground portion 115 is formed in a thin plate shape, and a plurality of holes 115a are formed therein.

Since the ground part 115 is made of a metal having flexibility such as aluminum, the ground part 115 can flexibly bend between the susceptor 114 and the bottom of the vacuum chamber 110. In this case, the width of the ground portion 115 is about 8-12mm and the thickness is preferably formed in about 0.4-0.6mm, but in various conditions such as the size of the vacuum chamber 110 and the size of the susceptor 114, etc. Accordingly, the width and the size of the ground unit 115 may be set in various ways.

The holes 115a are formed in a line along the longitudinal direction of the plate-shaped ground portion 115. The hole 115a serves to relieve the stress generated in the ground portion 115 when the ground portion 115 is repeatedly bent or folded between the susceptor 114 and the bottom of the vacuum chamber 110. The crack is prevented from occurring in the ground portion 115.

In addition, the hole 115a serves as a stopper for stopping the progress of the crack when a crack occurs at one end of the ground portion 115.

That is, as shown in FIG. 7A, a repeated stress is generated in the ground portion 115 due to repeated bending or folding of the ground portion 115 so that a crack c may be generated at one end of the ground portion 115. In this case, this crack c progresses along the width direction of the ground part 115 as time passes (when repeated stress is applied).

As shown in FIG. 7B, when the progress of the crack c reaches the hole 115a, the progress of the crack c ends at the hole 115a and is no longer transmitted to the dummy area opposite the hole. No further crack c progresses. Therefore, the crack c does not completely travel along the width direction of the ground portion 115 by the hole 115a so that the ground portion 115 is completely disconnected.

On the other hand, as shown in Figure 6, a plurality of the holes 115a are arranged in a line along the longitudinal direction of the plate-shaped ground portion 115, a plurality of rows of the holes 115a are arranged along the width direction. . In this case, the number of rows of the holes 115a may vary depending on the width of the ground portion 115. In addition, since the holes in the adjacent rows of the holes 115a are alternately formed, the holes 115a are not continuously disposed in the width direction of the ground portion 115. Therefore, it is possible to sufficiently secure a dummy region made of a plate such as aluminum in the width direction of the ground portion 115 to sufficiently endure repetitive stress and the like.

Although the shape of the hole 115a is oval in the drawing, the shape of the hole 115a may be formed in various shapes such as circular, triangular, and square. In addition, the size of the hole 115a may also be variously formed according to the size of the ground portion 115.

In addition, as illustrated in FIG. 7, a plurality of thin slits 115b may be formed in the ground portion 115 along the length direction of the ground portion 115 instead of the hole. Since the slit 115b is formed with a very thin width, a dummy area having a sufficient width is formed between the slit 115b and the slit 115b, thereby maintaining sufficient strength and repeatedly bending the ground portion 115. If a crack occurs due to folding, the crack that is advanced stops at the slit 115b, thereby preventing the ground portion 115 from being disconnected.

The ground portion 115 formed as described above is disposed between the susceptor 114 and the bottom surface of the vacuum chamber 110 to ground the susceptor 114. At this time, the number of grounding portions 115 disposed between the susceptor 114 and the bottom surface of the vacuum chamber 110 is not limited to a specific number. As long as the susceptor 114 can be grounded smoothly, the number of ground portions 115 disposed between the susceptor 114 and the bottom of the vacuum chamber 110 will not be limited to a specific number.

In the plasma processing apparatus having the above configuration, the substrate 201 is loaded into the vacuum chamber 110 by a loading means such as an external robot through the loading port 116 of the vacuum chamber 110 to lift pin 119. ), The lift unit 120 operates to raise the susceptor 114 so that the substrate 201 is placed on the susceptor 114. At this time, as the susceptor 114 is raised, a plurality of ground portions 115 are attached between the susceptor 114 and the bottom surface of the vacuum chamber 110 to ground the susceptor 114. You lose.

Subsequently, when RF power is applied to the susceptor 114 through the RF power supply 142, the susceptor 114 is grounded and the gas distribution plate 123 is RF biased. 114 acts as a counter electrode of the gas distribution plate 123, so that an RF discharge is generated between the susceptor 114 and the gas distribution plate 123.

On the other hand, since the gas is supplied from the gas supply unit 140 into the vacuum chamber 110 through the gas distribution plate 123, the gas supplied between the susceptor 114 and the gas distribution plate 123 is excited to plasma In the state, the substrate 201 loaded on the susceptor 114 starts to vapor-deposit. In this case, various gases may be used as the gas depending on a material vapor deposited on the substrate 201. For example, in the case of forming an amorphous silicon layer (a-Si layer) on the substrate 201, a mixed gas of silane (SiH 4 ) or hydrogen (H 2 ) is mainly supplied, and silicon nitride is supplied to the substrate 201. In the case of forming the insulating layer as described above, a mixed gas of silane, ammonia (NH 3 ) and nitrogen (N 2 ) is supplied.

In this case, since the gas supplied into the vacuum chamber 110 is supplied through the hole 124 formed in the gas distribution plate 123, the gas is uniformly supplied between the gas distribution plate 123 and the susceptor 114. On 201), a vapor chemical layer such as an amorphous silicon layer or a silicon nitride layer is deposited to have a uniform thickness.

As described above, in the present invention, the hole 115a is formed in the ground portion 115 that grounds the susceptor 114, and thus, even when repeatedly bent and folded with the ground portion 115, the ground portion 115 is applied to the ground portion 115. In addition to relieving stress, even when a crack occurs in the ground part 115, the progress of the crack is stopped by the hole 115a, thereby preventing the ground part 115 from being disconnected.

In the conventional plasma processing apparatus, when the ground portion 115 is disconnected, after removing the upper cover 132 of the vacuum chamber 110 to replace the disconnected ground portion 115 with a new ground portion 115, Disconnect the screwed electrical bar 118a from the susceptor 114 to remove the grounded portion 115 sandwiched between the susceptor 114 and the electrical bar 118a and reconnect the new grounded portion 115 again. The electric bar 118a must be screwed to the susceptor 114 in a state sandwiched between the susceptor 114 and the electric bar 118a. Therefore, in order to replace the ground 115, not only the plasma processing apparatus has to be stopped but also a part of the plasma processing apparatus has to be dismantled. Was exhausted.

However, in the present invention, since a plurality of holes 115a are formed in the ground portion 115 to prevent the ground portion 115 from being disconnected, it is unnecessary to stop or dismantle the plasma processing apparatus for replacing the ground portion 115. Done. Of course, the periodic replacement of the ground portion 115 is made, but since the periodic replacement is performed rarely compared to the conventional ground portion 115 replacement, it is possible to prevent a decrease in yield due to stopping or dismantling of the plasma processing apparatus. Will be.

On the other hand, in the above detailed description, only a specific structure is shown as the plasma processing apparatus, but the present invention is not limited to this specific structure. SUMMARY OF THE INVENTION The gist of the present invention is attached between the susceptor and the vacuum chamber to ground the susceptor and forms a hole in the ground that is flexed and unfolded as the susceptor is raised and lowered so that the ground is broken by repeated stress. It is to prevent that. Therefore, this concept, i.e., may be applied to the plasma processing apparatus of any known structure including a ground portion which is attached between the susceptor and the vacuum chamber to ground the susceptor and is flexibly stretched and bent as the susceptor rises and falls. will be.

In addition, although the hole and the slit are demonstrated as the structure which stops the crack which generate | occur | produces in the ground part in the above-mentioned description, this invention is not limited to this structure. In the present invention, a space is formed in the plate-shaped grounding portion to stop the progress of the crack so that the progress of the crack stops when the crack proceeds to this space. Therefore, if only such a planar space is formed in the ground portion in the present invention, the shape of the space may be called any shape or name, whether circular or oval shaped holes or slits.

In addition, in the above description, only the configuration in which the plasma processing apparatus of the present invention forms a semiconductor layer or an insulating layer on a substrate in order to manufacture a liquid crystal display device is disclosed. It may also be applied to structures such as vapor deposition.

 In other words, other examples or modifications of the present invention can be easily created by anyone in the technical field to which the liquid crystal display device using the basic concept of the present invention belongs.

1 is a view briefly showing the structure of a conventional plasma processing apparatus.

2 is a view showing a grounding portion installed in a conventional plasma processing apparatus.

3 is a view showing that the crack progresses when a crack occurs in the conventional ground portion.

4 is a view showing the structure of a plasma processing apparatus according to the present invention;

5 is an enlarged view of area A of FIG. 4;

6 is a view showing the structure of the ground portion of the plasma processing apparatus according to the present invention.

7a and 7b show the progress of cracks in the ground of the plasma processing apparatus according to the present invention;

8 is a view showing another structure of the ground portion of the plasma processing apparatus according to the present invention;

Explanation of symbols on the main parts of the drawings

101: plasma processing apparatus 110: vacuum chamber

114: susceptor 115: ground portion

116: hall 120: lift

123: gas distribution plate 140: gas supply unit

142: RF power supply

Claims (9)

Plate-shaped ground portion; And And a plurality of holes formed in the ground part and disposed along the longitudinal direction of the ground part and alternately disposed in the width direction. The grounding apparatus of claim 1, wherein the hole comprises an elliptical shape, a circular shape, a triangular shape, and a rectangular shape. Plate-shaped ground portion; And And a plurality of slits formed in the ground portion and disposed along the longitudinal direction of the ground portion at predetermined intervals. A vacuum chamber to maintain a vacuum state; A susceptor in which the substrate loaded and loaded in the vacuum chamber is located; A gas distribution plate disposed above the susceptor in the vacuum chamber to uniformly distribute the gas supplied from the outside into the vacuum chamber, and to which external power is applied; And Plasma processing device consisting of a ground portion formed in a plate shape and a space for stopping the crack when a crack occurs, between the susceptors and the bottom of the vacuum chamber to ground the susceptor 5. The plasma processing device of claim 4, wherein the power is RF power. The plasma processing apparatus of claim 4, further comprising a plurality of holes formed in the gas distribution plate to uniformly distribute the gas supplied from the outside into the chamber. 5. The plasma processing apparatus of claim 4, further comprising an electric bar screwed to the susceptor to fix the ground to the susceptor. The plasma processing apparatus of claim 4, wherein the space includes a plurality of holes disposed along the length direction of the ground portion and alternately disposed in the width direction. The plasma processing apparatus of claim 4, wherein the space includes a plurality of slits disposed along a length direction of the ground portion at predetermined intervals.
KR1020090119983A 2009-12-04 2009-12-04 Plasma process apparatus and ground device thereof KR20110063049A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11984299B2 (en) 2020-09-04 2024-05-14 Samsung Display Co., Ltd. Deposition device apparatus
KR20240076043A (en) 2022-11-23 2024-05-30 심경식 Apparatus for preventing disconnection of substrate treating facility

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11984299B2 (en) 2020-09-04 2024-05-14 Samsung Display Co., Ltd. Deposition device apparatus
KR20240076043A (en) 2022-11-23 2024-05-30 심경식 Apparatus for preventing disconnection of substrate treating facility

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