KR20110052553A - Plates for ball grid array semiconductor package, and its manufacturing process - Google Patents

Abstract

PURPOSE: A substrate for a ball grid array semiconductor package and a manufacturing method thereof are provided to freely control the thickness of a metal thin film by forming the metal thin film on a base substrate with a plating method. CONSTITUTION: A base substrate(10) is made of bismaleimide-triazine. Imide group or carboxyl group is generated on the surface of the base substrate by etching the surface of the base substrate. A first electroless plating layer(13) is formed on the upper side of the base substrate. A first electrolytic plating layer(14) is formed on the first electroless plating layer.

Description

Substrate for ball grid array semiconductor package and manufacturing method thereof {PLATES FOR BALL GRID ARRAY SEMICONDUCTOR PACKAGE, AND ITS MANUFACTURING PROCESS}

The present invention relates to a substrate for a ball grid array semiconductor package and a method of manufacturing the same. The present invention relates to a substrate for a ball grid array semiconductor package manufactured by plating a conductive metal without using an adhesive to bond the conductive metal to a bismarademide triazine film.

In the semiconductor industry, packaging technology for integrated circuits is continuously developed to meet the demand for miniaturization and mounting reliability. For example, the demand for miniaturization is accelerating the development of technologies for packages that are close to chip size, and the demand for mounting reliability highlights the importance of packaging technologies that can improve the efficiency of mounting and mechanical and electrical reliability after mounting. I'm making it.

One example of miniaturization of the package is a ball grid array semiconductor package. The ball grid array semiconductor package has an overall size of the semiconductor package that is about the same as or similar to that of a semiconductor chip. In particular, the ball grid array semiconductor package includes solder balls as an electrical connection means to the outside, that is, a mounting means on a printed circuit board. With this, there is an advantage that it can be very advantageously applied to the trend that the mounting area is decreasing.

A substrate for a ball grid array semiconductor package used in the related art has a structure in which a copper thin film layer is laminated on a substrate substrate through an adhesive.

However, the copper thin film adhesive type substrate substrate as described above uses the copper thin film in mass production as it is, so that the thickness of the copper thin film laminated on the upper portion of the base substrate cannot be freely controlled to be less than the thickness of the applied copper thin film. Accordingly, there is a problem that fine patterning is difficult in an etching process for forming a circuit or a terminal on a base substrate.

An object of the present invention for solving the problems of the prior art described above is a ball grid that can control the thickness of the metal thin film provided in the substrate for the ball grid array semiconductor package freely, and can strengthen the adhesion between the substrate substrate and the metal thin film The present invention provides a substrate for an array semiconductor package and a method of manufacturing the same.

A substrate for a ball grid array semiconductor package according to an aspect of the present invention for achieving the above object, the substrate substrate formed of bismarimide triazine; A first electroless plating layer formed on the base substrate; And a first electroplating layer formed on the first electroless plating layer. .

The surface of the substrate may be etched to form an imide group or a carboxyl group, and a coupling agent may be bonded to the imide group or the carboxyl group.

The first electroless plating layer is a metal selected from at least one member selected from the group consisting of gold, nickel and copper.

The first electroplating layer is a metal selected from one or more types from the group consisting of gold, nickel and copper.

It is preferable that a said 1st electroless plating layer is 0.2 micrometer or less.

It is preferable that the said 1st electroplating layer is 10-20 micrometers.

In addition, the method of manufacturing a substrate for a ball grid array semiconductor package of the present invention comprises the steps of: 1) etching cleavage of the surface of the substrate substrate formed of bismarademide triazine with an etching solution to generate an imide group or a carboxyl group on the surface; 2) introducing a coupling agent to the surface of the base substrate and coupling the imide group or carboxyl group; 3) forming a first electroless plating layer on the surface of the base substrate; And 4) forming a first electroplating layer on the first electroless plating layer; .

The method of manufacturing a substrate for a ball grid array semiconductor package may further include: 5) forming at least one through hole having a size of 3 to 7 μm in a desired portion of the substrate; 6) forming a second electroless plating layer on the through hole and the surface of the substrate by an electroless plating method; 7) forming a second electroplating layer on the surface of the second electroless plating layer by an electroplating method; 8) providing a mask having a diameter exceeding a diameter of the through hole on the through hole; And 9) etching away portions other than the mask to leave only the substrate substrate. Do more.

In addition, the manufacturing method of the substrate for the ball grid array semiconductor package further comprises: 5) forming at least one through hole having a size of 3 ~ 7 ㎛ in the desired portion of the substrate; 6) forming a second electroless plating layer on the surface of the through hole and the substrate by an electroless plating method; 7) providing a mask on the substrate to expose the diameter of the through hole to exceed; 8) forming a second electroplating layer on the second electroless plating layer by an electroplating method; And 9) removing the mask and etching the lower portion of the mask to leave only the substrate. Do more.

The etching solution is selected from the group consisting of at least one selected from the group consisting of potassium hydroxide, sodium hydroxide, calcium hydroxide and magnesium hydroxide as hydroxides, ethylene glycol, propylene glycol, butanediol, neopentyl glycol and diethylene glycol as alcohols. It can be used the thing of the solution which mixed 1 or more types chosen from dimethylacetamide or dimethylformamide which is 1 or more types of nitrogen compounds.

The etching solution may be mixed with 1 to 3 parts by weight of alcohol to 14 parts by weight of hydroxide, and is preferably prepared by mixing 1 to 3 parts by weight of a nitrogen compound to 2 parts by weight of alcohol.

In the step 1), the etching may immerse the substrate substrate in the etching solution at 45 to 50 ℃ 5-7 minutes.

Bonding palladium or tin to the base substrate may be further performed between step 2) and step 3).

The first electroless plating layer and the second electroless plating layer may be formed of gold, nickel, or copper.

The first electrolytic plating layer and the second electrolytic plating layer may be formed of gold, nickel or copper.

It is preferable that the thickness of a said 1st electroless plating layer is 0.2 micrometer or less.

It is preferable that the formation thickness of the said 1st electroplating layer is about 10-20 micrometers.

In addition, the substrate for a ball grid array semiconductor package of the present invention, the substrate substrate is formed of bismarimide triazine and provided with a plurality of through holes; A first electroless plating layer formed on the base substrate; A first electroplating layer formed on the first electroless plating layer; A second electroless plating layer formed in and around the through hole; A second electroplating layer formed on the second electroless plating layer; .

Conductive metal plated bismarimide triazine film manufacturing method according to the present invention is formed by forming a metal thin film on the substrate substrate by a plating method, unlike the conventional method does not adhere the metal thin film to the substrate substrate using an adhesive The thickness of the metal thin film can be freely adjusted. In addition, since the metal thin film is directly formed on the base substrate by the plating method, the formed metal thin film has excellent adhesion to the base substrate.

In addition, since the bismarimide triazine film plated with the conductive metal of the present invention does not use an adhesive layer, it is excellent in heat resistance, chemical resistance and migration, and the overall thickness can be achieved thin.

In the conductive metal plating method of the present invention, the polymer film is chemically modified by depositing the polymer film in a chemical solution in an atmospheric pressure atmosphere, not in a special environment requiring high cost such as vacuum conditions, and directly conducting the surface of the modified polymer film. After forming a metal layer, it is a method of manufacturing a non-adhesive type metal laminated film by laminating a metal thin film using electrolytic plating method. Since the manufacturing method of the present invention does not require a special working environment during the manufacturing process, it is possible to secure excellent price competitiveness.

In addition, unlike conventional manufacturing methods, it is a future technology that is very suitable as a fine patterning material manufacturing technology capable of realizing ultra-thin metal thickness because the metal thin film is laminated by an electroplating method rather than bonding a commercialized metal thin film.

On the other hand, when bismarimide triazine material is used as a base substrate for ball grid array semiconductor packages, the metal lamination | stacking technology of an adhesive agentless structure is not yet established. Therefore, the film of the present invention and its manufacturing method are technologies capable of producing high functionality and producing core materials of competitively priced circuit boards, which is expected to grow rapidly in the future. It can be expected to have the effect of possessing high value-added parts and material production technology.

1 shows a process of manufacturing a substrate for a ball grid array semiconductor package according to an embodiment of the present invention.
2 and 3 illustrate two methods for forming a terminal portion on a substrate for a ball grid array semiconductor package according to an embodiment of the present invention, respectively.
Figure 4 is an electron micrograph of the surface of the bismarimide triazine film used in the present invention.

The present applicant is studying a method for providing a metal thin film layer on a substrate for a ball grid array semiconductor package, using a bismarimide triazine substrate as a substrate substrate, and using a chemical to surface the bismarimide triazine substrate. After the etching, the coupling agent and the metal catalyst were introduced to the etched surface, and it was confirmed that the metal thin film could be directly formed on the substrate substrate by the plating method, thereby completing the present invention.

Hereinafter, with reference to the accompanying drawings of the present invention will be described in detail to be easily carried out by those of ordinary skill in the art.

1 shows a process of manufacturing a substrate for a ball grid array semiconductor package according to an embodiment of the present invention.

In order to form a metal plating layer without using an adhesive on an appropriate size bismarademide triazine substrate 10, in order to increase the surface area on the substrate surface, the etching surface 11 is formed using an etching solution. . In order to bond the metal to the etching surface 11 more easily, a coupling 12 is provided using a coupling agent, and this is immersed in an electroless plating solution to form the first electroless plating layer 13. Let's do it. The bismaleimide triazine substrate on which the first electroless plating layer is formed is immersed in an electrolytic plating solution, and a current is applied to form the first electrolytic plating layer 14. The substrate for the ball grid array semiconductor package provided with the metal layer manufactured through the above process is excellent in heat resistance, chemical resistance, migration, and the like, and has weak heat resistance of the ball grid array semiconductor package substrate provided by the metal layer using an adhesive in the related art. , Chemical resistance and migration can be improved.

2 and 3 illustrate two methods for forming a terminal portion on a substrate for a ball grid array semiconductor package according to an embodiment of the present invention, respectively.

Referring to FIG. 2, in order to form a terminal portion on a substrate for a ball grid array semiconductor package in which the first electroless plating layer and the first electrolytic plating layer are formed, a through hole 16 having an appropriate size is formed in the substrate. The second electroless plating layer 17 is formed using the electroless plating solution, and the second electroplating layer 18 is formed on the second electroplating layer 17 using the electrolytic plating solution. Subsequently, the mask 19 is provided in excess of the through-hole 16, the portions except for the portion provided with the mask 19 are etched, and the mask is removed to provide a terminal portion on the substrate for a ball grid array semiconductor package according to the present invention. To form.

Referring to FIG. 3, another method of forming a terminal portion on the substrate for the ball grid array semiconductor package includes a mask for exposing the substrate having the second electroless plating layer 17 to exceed the diameter of the through hole 16. 19) is formed, and the second electroplating layer 18 is formed using an electrolytic plating solution on the portion where the mask 19 is not formed. Subsequently, the mask 19 and the portion where the mask is formed are etched to form terminal portions on the substrate for the ball grid array semiconductor package according to the present invention.

Hereinafter, a method of manufacturing a substrate for a ball grid array semiconductor package according to the present invention will be described.

* In the manufacturing method of this invention, the bismarimide triazine film by which the copper thin film was plated is demonstrated for convenience of description.

The method for manufacturing a substrate for a ball grid array semiconductor package of the present invention may include at least some of an etching process, a neutralization process, a coupling process, a catalyst addition process, a reaction promotion process, an electroless plating process, and an electrolytic plating process.

Hereinafter, a method of manufacturing a substrate for a ball grid array semiconductor package according to the present invention will be described in detail through the processes. In addition, in each of the following processes, plasma or ultrasonic waves may be added to cause a continuous process.

1. Etching process

* The bismarimide triazine film is modified by using an etching solution.

Etching solutions that can be used in this process include potassium hydroxide, sodium hydroxide, calcium hydroxide or magnesium hydroxide, which are hydroxides, ethylene glycol, propylene glycol, butanediol, neopentylglycol or diethylene glycol, which are alcohols, and dimethylacetamide, which is a nitrogen compound. It is preferable that it is a solution which mixed dimethylformamide and the like. The etching process is performed by immersing the bismarademide triazine film in the etching solution at about 20 to 40 ° C. for about 3 to 5 minutes. At this time, the etching solution has a large effect on the etching effect and the coupling of the coupling agent according to the mixing ratio, thereby having a large influence on the electroless plating efficiency of the metal. In particular, the alcohol or nitrogen compound in the etching solution plays an important role in opening the imide ring by opening the imide ring on the surface of the bismarimide triazine film.

The etching solution may be mixed with 1 to 3 parts by weight of alcohol to 14 parts by weight of hydroxide, and is preferably prepared by mixing 1 to 3 parts by weight of a nitrogen compound to 2 parts by weight of alcohol. At this time, when the nitrogen compound is less than 1 part by weight, it is difficult to ring-open the imide ring present on the surface of the triazine film. When the nitrogen compound exceeds 3 parts by weight, the expansion or partial dissolution of the surface of the bismarimide triazine film may occur. Too much occurs, a problem may occur that the adhesion strength of the metal plating layer formed later.

The bismaramide triazine film surface modified by the present etching process may enhance adhesion strength by maximizing adhesion between the plating layer and the bismaramide triazine film in the subsequent plating process. This etching process results in the cleavage of the imide ring of bismarademide triazine, which is converted to an imide group or a carboxyl group to increase reactivity.

When the process temperature of such an etching process is 20 ° C. or less, the activity of the etching solution is lowered, so that the desired etching effect cannot be achieved, and long-term reaction may cause partial damage on the bismarimide triazine film. When the process temperature of an etching process is 40 degreeC or more, the rapid progress of an etching makes it difficult to control the uniformity and continuity of the whole uniformity on the bismarademide triazine film surface.

2. Neutralization process

The bismarimide triazine film whose surface obtained in the etching process was modified was neutralized with an acidic neutralization solution.

This process removes metal salts, such as K ⁺ ions, which are expected to remain on the bismarademide triazine film surface obtained in the etching process. When such a metal salt remains, in a coupling process which is a post process, the metal salts compete with the coupling ions for imparting polarity to the bismarademide triazine film, thereby preventing the reaction between the coupling ions and the imide group.

When the temperature of the neutralization step is 10 ° C. or lower, the activity of the reaction solution is low, so that the desired neutralization effect cannot be achieved, and damage to the partial bismarimide triazine film is remarkable. Moreover, when the temperature of a neutralization process is 30 degreeC or more, it becomes difficult to adjust overall uniformity and continuity by a rapid reaction.

3. Coupling Process

The bismaramide triazine film modified in the neutralization process is subjected to a coupling reaction using a coupling agent solution.

In the coupling reaction, the coupling ions are bonded to the sites where the chemical bonds on the surface of the bismarimide triazine film are cleaved by the etching process to impart polarity on the bismarimide triazine film. To improve the adhesion strength of the target product.

The coupling agent solution that can be used in the present process may be a silane coupling agent or an amine coupling agent. As the silane coupling agent, various commercial products such as Shinetsu, Japan Energy or Dow Corning coupling agent can be used. As the amine coupling agent, an alkali coupling agent prepared by mixing sodium hydroxide and monometal amine, or an acid coupling agent prepared by mixing ethylenediamine and hydrochloric acid may be used.

Although the reaction conditions vary depending on the characteristics of the coupling agent used, in the case of the silane coupling agent, the reaction is performed by immersing for about 5 to 7 minutes at about 25 to 30 ° C.

4. Pickling process

The coupled bismaleimide triazine film obtained in the coupling process is immersed at room temperature using an acidic solution to remove the coupling ions which are not bound to the cleavage site on the surface of the bismaramide triazine film. If the present pickling process is long or the acidic solution used is an excessively strong acidic solution, the coupled coupling ions can be removed, so that the reaction conditions are appropriately adjusted.

5. Catalyst addition process

The coupled bismarimide triazine film is immersed in the catalyst solution to adsorb palladium as a metal catalyst on the bismarimide triazine film surface.

The catalyst solution is prepared by diluting palladium chloride and stannous chloride in hydrochloric acid at a mass ratio of 1: 3 to 1: 5. If the reaction time of this process is too short, the adsorption rate of palladium and tin as catalysts on the surface of the bismarimide triazine film is low, so that the desired catalytic effect cannot be achieved. If the reaction time is too long, bismarray is formed by hydrochloric acid in the process solution. Adverse conditions of corrosive mid-triazine film surfaces can occur, so the reaction conditions are properly adjusted.

6. Electroless  Plating process

The bismaleimide triazine film to which the catalyst is added is immersed in an electroless plating solution to electroless plate the bismaleimide triazine film. The electroless plating refers to plating a desired metal on a substrate without applying current.

As an electroless plating solution, nickel sulfate prepared by mixing an aqueous solution of EDTA, an aqueous solution of caustic soda, an aqueous solution of formalin and an aqueous solution of copper sulfate, or a mixture of an aqueous solution of sodium hypophosphite, sodium citrate, ammonia, and nickel hexasulfate Electroless plating solutions can be used. Here, the electroless plating solution may also include a small amount of a brightener component, a stabilizer component, etc. in order to maximize metal properties. Such brighteners and stabilizers enable recycling and long term storage of the electroless plating solution. When using a copper sulfate electroless plating solution, the electroless plating process is performed by immersing the catalyst-added bismarademide triazine film at a temperature of about 65 to 75 ° C. for about 5 to 10 minutes without applying a current. At this time, the thickness of the electroless plating layer obtained in an electroless plating process can be adjusted suitably according to plating time. If the reaction temperature of the electroless plating process is less than 65 ° C., the plating solution activity is low, so unplating and partial plating proceed to form an electroless plating layer, and the temperature of the electroless plating process is 75 ° C. When exceeded, the overall uniformity and adhesion on the electroless plated film are insufficient due to the rapid progress of plating.

In the case of using a nickel sulfate electroless plating solution, the electroless plating process is performed by immersing the catalyst-added bismaleimide triazine film at a temperature of about 35 to 40 ° C for about 2 minutes. This process is a process for the electroplating process after, but may be carried out with a plating thickness of about 0.2 ㎛ or less, it is preferable to perform for a time to the extent that the unplated portion is lost.

7. Electrolytic Plating Process

The electroless plated bismarimide triazine film is immersed in the plating solution, and a plating process is performed by applying an electric current.

Specifically, the electroless plated bismarimide triazine film is immersed in the plating solution, and the plating is performed by applying a current of 5 A / dm ^ 2 or less at about 20 to 30 ° C. for about 30 minutes to prepare a substrate for a ball grid array semiconductor package. Manufacture. In the plating reaction, the plating solution is stirred smoothly to minimize the non-uniformity of the plating solution concentration. Such plating conditions can be appropriately adjusted according to the thickness of the copper plating film to be obtained.

As the plating solution that can be used in this embodiment, commercially available plating solutions (Enthone OMI, diluent metal, sunrays, etc.) can be used. However, the plating process is performed slowly over a long period of time under conditions milder than those of commercial plating solutions. Prolonged plating time can minimize the generation of stress inside the plating film to lower the hardness and obtain a plating film excellent in strength and ductility.

In addition to the commercially available plating solution, a plating solution prepared by diluting a copper sulfate aqueous solution, a sulfuric acid and hydrochloric acid mixed solution with purified water may be used. Such plating solutions may include minor amounts of brighteners and additives.

8. Physical property inspection of substrate for ball grid array semiconductor package with copper plating film

The degree of plating of the substrate was evaluated by visually observing the continuity of the substrate for the ball grid array semiconductor package obtained according to the embodiment of the present invention. (Circle) is a case where the whole sample surface is uniformly and beautifully plated, (circle) is a case where the sample surface is uniformly plated, (triangle | delta) is a case where the part which is partially unplated exists, and x is a case where there are many unplated parts. Point.

The adhesion strength is evaluated according to the JIS-6471 standard.

Hereinafter, the present invention will be described in detail with reference to examples so that those skilled in the art may easily implement the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

The bismarademide triazine film used in the embodiment of the present invention is prepared with a bismarademide triazine film (Mitsubishi Chemical) having a width of 100 mm, a length of 200 mm and a thickness of 100 μm, and dried at 150 ° C. for about 5 minutes as a pretreatment. To remove the water contained in the bismarimide triazine film. The following examples are suitable processes for the bismarimide triazine film, which process may be appropriately modified by those skilled in the art according to the bismarademide triazine film and conditions.

Example  1: Fabrication of substrates for ball grid array semiconductor packages 1

The bismarimide triazine film was mixed in a 1 L etching solution (20 g of ethylene glycol and 10 g of dimethylacetamide in 1 L of distilled water, and 280 g of potassium hydroxide was added thereto to prepare a mixed solution) at 35 ° C for 4 minutes. It was immersed and etched. The etched bismarimide triazine film was immersed in 100 ml / l solution of hydrochloric acid for about 6 minutes to neutralize the surface. Thereafter, the silane coupling agent containing aminopropyl triethoxy silane was diluted to 1.2% / l, and soaked for 5 minutes at a temperature of about 26 ° C. This was washed with an aqueous hydrochloric acid solution, and a bismaradeimide coupled to a catalyst solution prepared by diluting a solution consisting of palladium chloride (0.5 g / l) and chlorinated tin tin (2 g / l) in hydrochloric acid at a volume ratio of 1: 1. The triazine film was immersed for about 5 minutes at room temperature.

Next, copper sulfate bottom plating prepared by mixing an aqueous copper sulfate solution (15.8 g / l) with an aqueous solution consisting of an aqueous EDTA solution (4.2 g / l), an aqueous solution of caustic soda (13.7 g / l), and an aqueous formalin solution (9.5 g / l). The bismaleimide triazine film catalyzed by the solution was immersed for about 10 minutes at a temperature of about 70 ° C. without applying an electric current to perform electroless plating to form a first electroless plating layer.

Next, the bismaleimide triazine film having the first electroless plating layer formed thereon was dried at about 110 ° C. for 10 minutes, and the first electroless plating layer was coated in a plating solution prepared by diluting an aqueous copper sulfate solution, sulfuric acid, and hydrochloric acid with ion-exchanged water. The formed bismarimide triazine film was immersed at a temperature of about 30 ° C. for 30 minutes, and a current of 3 A / dm ^ 2 was applied to prepare a ball grid array semiconductor package substrate having a first electroplating layer.

Example  2: Fabrication of substrates for ball grid array semiconductor packages 2

In Example 1, except that 20 g of ethylene glycol and 20 g of dimethylacetamide were mixed in 1 L of distilled water as an etching solution, and an etching solution prepared by adding 280 g of potassium hydroxide was used. In the same manner as in Example 1, a substrate for a ball grid array semiconductor package was manufactured.

Example  3: Substrate for Ball Grid Array Semiconductor Package Terminal  Manufacturing 3

A through hole having a size of 4 μm was formed in the substrate prepared in Example 1, the surface of the substrate was etched to roughen the surface, and immersed in an electroless plating solution to form a second electroless plating layer. The substrate on which the second electroless plating layer was formed was immersed in an electrolytic plating solution and a current was applied to form the second electroplating layer. A mask having a diameter exceeding the through hole is formed on the through hole, and a portion except for the portion provided with the mask is etched away so that only the substrate substrate remains, thereby forming a terminal portion on the substrate for the ball grid array semiconductor package. I was.

Example  4: Substrate for Ball Grid Array Semiconductor Package Terminal  Manufacturing 4

A through hole having a size of 4 μm was formed in the substrate prepared in Example 1, the surface of the substrate was etched to roughen the surface, and immersed in an electroless plating solution to form a second electroless plating layer. The through hole is provided, and a mask is provided on the substrate to expose the substrate having the second electroless plating layer to exceed the diameter of the through hole. After the substrate was immersed in an electrolytic plating solution to form a second electroplating layer, a mask and a lower portion of the mask were etched to retain only the substrate substrate, thereby forming a terminal portion on the substrate for a ball grid array semiconductor package.

Comparative example  1: Fabrication of substrates for ball grid array semiconductor packages 1

In Example 1, 20 g of ethylene glycol was mixed with 1 L of distilled water as an etching solution, and the same procedure as in Example 1 was performed except that only an etching solution prepared by adding 280 g of potassium hydroxide was used. Thus, a substrate for a ball grid array semiconductor package was manufactured.

Comparative example  2: Fabrication of substrates for ball grid array semiconductor packages 2

In Example 1, 20 g of ethylene glycol and 100 g of dimethylacetamide were mixed in 1 L of distilled water as the etching solution, and only the etching solution prepared by adding 280 g of potassium hydroxide was used. In the same manner as in Example 1, a substrate for a ball grid array semiconductor package was manufactured.

Comparative example  3: Fabrication of substrates for ball grid array semiconductor packages 3

In Example 1, a substrate for a ball grid array semiconductor package was prepared in the same manner as in Example 1, except that 280 g of potassium hydroxide was dissolved in 1 L of distilled water as an etching solution.

Comparative example  4: Fabrication of substrates for ball grid array semiconductor packages 4

In Example 1, a substrate for a ball grid array semiconductor package was manufactured in the same manner as in Example 1, except that 1 L solution in which 20 g of ethylene glycol was mixed in distilled water was used as an etching solution.

Comparative example  5: Fabrication of substrates for ball grid array semiconductor packages 5

In Example 1, a substrate for a ball grid array semiconductor package was prepared by the same process as Example 1, except that a solution dissolved in 1 L of 200 g of sodium hydroxide in distilled water was used as an etching solution. .

The physical properties of the substrates for the ball grid array semiconductor packages manufactured according to Examples 1 and 2 and Comparative Examples 1 to 5 were tested and shown in Table 1 below.

Plating accuracy
Copper thin film / film thickness (㎛)
Average adhesion strength (㎏ / ㎝)
Example 1
◎
12/100
0.85
Example 2
◎
12/100
0.80
Comparative Example 1
◎
12/100
0.65
Comparative Example 2
◎
12/100
0.55
Comparative Example 3
○
12/100
0.50
Comparative Example 4
○
12/100
0.60
Comparative Example 5
△
12/100
0.30

As can be seen in Table 1, Comparative Examples 1 and 2, but the plating degree was good, the average adhesive strength was low as 0.65 and 0.55, respectively. However, the substrates of Examples 1 and 2 showed better plating properties and adhesion strengths than Comparative Examples 1 and 2.

The reason is that the ethylene glycol and dimethylacetamide induced reactions such as surface expansion or partial dissolution of the bismaleimide triazine film, thereby promoting the surface modification of the bismaleimide triazine film. However, when too much dimethylacetamide is added, the surface expansion or partial melting occurs too much, so that the average adhesion strength of the copper thin film formed by electroless and electrolytic plating in the subsequent process is inferior.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, Of course.

Claims (7)

A substrate for a ball grid array semiconductor package,
A base substrate formed of bismarimide triazine;
A first electroless plating layer formed on the base substrate; And
A first electroplating layer formed on the first electroless plating layer;
A substrate for a ball grid array semiconductor package comprising a. The method of claim 1,
The surface of the said base substrate is etched and cleaved, the imide group or the carboxyl group is formed, and the coupling agent is couple | bonded with the said imide group or the carboxyl group, The board | substrate for ball grid array semiconductor packaging characterized by the above-mentioned. The method of claim 1,
The first electroless plating layer is a ball grid array semiconductor package substrate, characterized in that at least one metal selected from the group consisting of gold, nickel and copper. The method of claim 1,
The first electroplating layer is a ball grid array semiconductor package substrate, characterized in that at least one metal selected from the group consisting of gold, nickel and copper. The method of claim 1,
The first electroless plating layer is 0.2 ㎛ or less substrate for a ball grid array semiconductor package. The method of claim 1,
The first electroplating layer is a ball grid array semiconductor package substrate, characterized in that 10 to 20 ㎛. In the method of manufacturing a substrate for a ball grid array semiconductor package,
1) etching and cleaving the surface of the substrate substrate formed of bismarademide triazine with an etching solution to generate an imide group or a carboxyl group on the surface;
2) introducing a coupling agent to the surface of the base substrate and coupling the imide group or carboxyl group;
3) forming a first electroless plating layer on the surface of the base substrate; And
4) forming a first electroplating layer on the first electroless plating layer;
Method of manufacturing a substrate for a ball grid array semiconductor package comprising a.

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