KR20110037172A

KR20110037172A - Light emitting device package and method for fabricating the same

Info

Publication number: KR20110037172A
Application number: KR1020090094480A
Authority: KR
Inventors: 원정민
Original assignee: 엘지이노텍 주식회사
Priority date: 2009-10-06
Filing date: 2009-10-06
Publication date: 2011-04-13
Also published as: KR101072017B1

Abstract

PURPOSE: A light emitting device package and a manufacturing method thereof are provided to increase the light efficiency by forming a reflection layer under the spacing part. CONSTITUTION: A reflecting layer(2) is formed on a portion of the top of the substrate. The first insulation layer is formed on the reflecting layer. The second insulation layer is formed on the top of the substrate. A first electrode layer(5) and a second electrode layer are formed on the first insulation layer and the second insulation layer.

Description

LIGHT EMITTING DEVICE PACKAGE AND METHOD FOR FABRICATING THE SAME}

The embodiment relates to a light emitting device package and a method of manufacturing the same.

Recently, many light emitting diodes have been used as light emitting devices.

The light emitting diode is a light emitting device that can produce various colors by using compound semiconductor materials such as GaAs, AlGaAs, GaN, InGaN, AlGaInP.

The light emitting diode is formed by stacking a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, and supplies power to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively. Light is emitted from the active layer.

The first conductive semiconductor layer may be an n-type semiconductor layer, and the second conductive semiconductor layer may be a p-type semiconductor layer. In contrast, the first conductive semiconductor layer may be a p-type semiconductor layer. The second conductive semiconductor layer may be an n-type semiconductor layer.

On the other hand, the light emitting device package is prepared by modularizing the light emitting device or to arrange and package the light emitting device on the substrate in order to protect the light emitting device, in the manufacture of the light emitting device package, the light emitted from the light emitting device is effectively added to the outside To be released.

The embodiment provides a light emitting device package having a new structure and a method of manufacturing the same.

The embodiment provides a light emitting device package having improved light efficiency and a method of manufacturing the same.

The light emitting device package according to the embodiment includes a substrate; A reflective layer on at least a portion of the substrate; A first insulating layer on the reflective layer; A second insulating layer on the substrate; A first electrode layer and a second electrode layer formed on the first insulating layer and the second insulating layer and spaced apart from each other on the first insulating layer; And a light emitting device disposed on the substrate and electrically connected to the first electrode layer and the second electrode layer.

The light emitting device package manufacturing method according to the embodiment comprises the steps of preparing a substrate; Forming a reflective layer on at least a portion of the substrate; Forming a first insulating layer on the reflective layer and a second insulating layer on the substrate; Forming a first electrode layer and a second electrode layer on the first insulating layer and the second insulating layer so as to be spaced apart from each other on the first insulating layer; And installing a light emitting device on the substrate and electrically connecting the first electrode layer and the second electrode layer.

The embodiment can provide a light emitting device package having a new structure and a method of manufacturing the same.

The embodiment can provide a light emitting device package having improved light efficiency and a method of manufacturing the same.

In the description of an embodiment according to the present invention, each layer (film), region, pattern or structure is "on / on" or "bottom / on" of the substrate, each layer (film), region, pad or patterns. In the case described as being formed under, "on" and "under" are "directly" or "indirectly" formed through another layer. It includes everything that is done. In addition, the criteria for up / down or down / down each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

1 is a cross-sectional view of a light emitting device package according to an embodiment, FIG. 2 is a perspective view of a light emitting device package according to an embodiment, and FIG. 3 is an enlarged view of portion A of FIG.

1 to 3, a light emitting device package according to an embodiment includes a substrate 1, a reflective layer 2 formed on the substrate 1, and a first insulating layer formed on the reflective layer 2. 3), a second insulating layer 4 formed on the substrate 1, a first electrode layer 5 and a second electrode layer formed on the first insulating layer 3 and the second insulating layer 4; 6 and a light emitting element 7 provided on the substrate 1 and electrically connected to the first electrode layer 5 and the second electrode layer 6.

The substrate 1 may be formed of a silicon (Si) material, and a groove 9 may be formed on an upper surface thereof.

The reflective layer 2 may be formed in whole or in part on the substrate 1, for example, only on the upper surface of the substrate 1. In addition, the reflective layer 2 may be formed only on the substrate 1 forming the bottom surface of the groove 9. In addition, the reflective layer 2 may be formed only on the substrate 1 forming the bottom surface and the inclined surface of the groove 9. In addition, the reflective layer 2 may be formed only at a position overlapped in the vertical direction with the spacer 10, which is a spaced apart portion between the first electrode layer 5 and the second electrode layer 6.

For example, the reflective layer 2 may be formed of a metal material having high light reflectance, and may be formed of aluminum (Al).

The first insulating layer 3 is formed on the reflective layer 2. The first insulating layer 3 allows the reflective layer 2 to be electrically separated from the first electrode layer 5 and the second electrode layer 6 disposed on the reflective layer 2.

The first insulating layer 3 may be formed by depositing an insulating material on the reflective layer 2 or by oxidizing the reflective layer 2. For example, when the reflective layer 2 is formed of aluminum (Al), the first insulating layer 3 may be formed of aluminum oxide (Al ₂ O ₃ ).

The second insulating layer 4 is formed in a region where the first insulating layer 3 is not formed on the substrate 1. The second insulating layer 4 allows the substrate 1 to be electrically separated from the first electrode layer 5 and the second electrode layer 6 disposed on the substrate 1. For example, when the reflective layer 2 is formed on the entire surface of the substrate 1, the second insulating layer 4 may not be formed.

The second insulating layer 4 may be formed by forming an insulating material on the substrate 1 or by oxidizing a material forming the substrate 1. For example, when the substrate 1 is formed of silicon (Si), the second insulating layer 4 may be formed of silicon oxide (SiO ₂ ).

The first electrode layer 5 and the second electrode layer 6 are formed on the first insulating layer 3 and the second insulating layer 4 and are electrically separated from each other. The first electrode layer 5 and the second electrode layer 6 may be disposed on an upper surface, a side surface, and a lower surface of the substrate 1, or may be disposed only on the upper surface of the substrate 1 according to a design.

The first electrode layer 5 and the second electrode layer 6 may be formed of a single layer structure, a multilayer structure, or an alloy including at least one of Ti, Au, Ni, Cu, Ag, Al, and Cr. .

For example, the first electrode layer 5 and the second electrode layer 6 may include an adhesive layer, a seed layer, and a plating layer. For example, the adhesive layer is formed so that the seed layer is well formed on the first insulating layer 3 and the second insulating layer 4, and may include at least one of Ti, Ni, and Cr. The seed layer may include Cu. In addition, the plating layer may be formed of at least one of a Cu layer, a Ni layer, and an Au layer, and the Cu layer, the Ni layer, and the Au layer may be sequentially formed.

In addition, the first electrode layer 5 and the second electrode layer 6 may be formed of a reflective metal Ag or Al on the uppermost layer to increase the light reflectance.

The light emitting element 7 may be formed on the substrate 1 and disposed in the groove 9 of the substrate 1. The light emitting element 7 may be provided on the first insulating layer 3 or the second insulating layer 4, or may be provided on the first electrode layer 5 or the second electrode layer 6. .

In the embodiment, it is illustrated that the light emitting element 7 is installed on the first electrode layer 5, and the first electrode (not shown) of the light emitting element 7 is in contact with the first electrode layer 5. The second electrode (not shown) of the light emitting element 7 is electrically connected to the second electrode layer 6.

In the light emitting device package as described above, when power is supplied through the first electrode layer 5 and the second electrode layer 6, light is generated in the light emitting device 7. The light generated by the light emitting element 7 travels upward and is emitted to the outside or is reflected by the first electrode layer 5 and the second electrode layer 6 and emitted to the outside.

Meanwhile, the first electrode layer 5 and the second electrode layer 6 are formed spaced apart from each other for electrical insulation. That is, as shown in FIG. 3, the separation part 10 is formed between the first electrode layer 5 and the second electrode layer 6.

The spacer 10 may not effectively reflect the light generated by the light emitting device 7. In the light emitting device package according to the embodiment, the reflective layer 2 is formed under the spacer 10 so that The light that is not reflected by the spacer 10 may be reflected. Therefore, the light emitting device package according to the embodiment may increase the light efficiency.

Since the reflective layer 2 may be formed of an electrically conductive material such as a metal, the first insulating layer 3 is formed on the reflective layer 2 to form the first electrode layer 5 and the second electrode layer 6. ) Is prevented from being electrically connected through the reflective layer 2. The first insulating layer 3 may be formed of a material having high light transmittance, and the light transmitted through the first insulating layer 3 among the light emitted from the light emitting element 7 may be emitted from the reflective layer 2. Reflected.

The light emitting device package as described above may be manufactured by the following process.

First, the substrate 1 is prepared. The substrate 1 may be formed of silicon (Si) material, and the groove 9 may be formed by etching the substrate 1.

Aluminum (Al) is deposited in the groove 9 to form the reflective layer 2. In addition, a first insulating layer 3 formed of aluminum oxide (Al ₂ O ₃ ) is formed on the reflective layer 2 through a sputtering process using an O ₂ plasma. In addition, the substrate 1 is oxidized to form a second insulating layer 4 formed of silicon oxide (SiO ₂ ) on the surface of the substrate 1.

Next, an electrode layer is formed on the first insulating layer 3 and the second insulating layer 4, and the first electrode layer 5 and the second electrode layer 6 are formed by separating the electrode layer into two parts. .

The light emitting device 7 is disposed on the first electrode layer 5, and the light emitting device 7 is electrically connected to the second electrode layer 6 through a wire 8.

Although the embodiment illustrates that the light emitting element 7 is electrically connected to the second electrode layer 6 through the wire 8, the light emitting element 7 is respectively connected to the first through two wires. It is possible to be electrically connected with the electrode layer 5 and the second electrode layer 6.

In addition, although not shown, a molding member may be formed in the groove 9 to surround the light emitting element 7, and the molding member may include a phosphor.

Although described above with reference to the embodiment is only an example and is not intended to limit the invention, those of ordinary skill in the art to which the present invention does not exemplify the above within the scope not departing from the essential characteristics of this embodiment It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

1 is a cross-sectional view of a light emitting device package according to the embodiment.

2 is a perspective view of a light emitting device package according to the embodiment;

3 is an enlarged view of a portion A of FIG. 1.

Claims

Board;

A reflective layer on at least a portion of the substrate;

A first insulating layer on the reflective layer;

A second insulating layer on the substrate;

A first electrode layer and a second electrode layer formed on the first insulating layer and the second insulating layer and spaced apart from each other on the first insulating layer; And

And a light emitting device disposed on the substrate and electrically connected to the first electrode layer and the second electrode layer.

The method of claim 1,

The substrate has a groove formed on the upper surface, and the reflective layer, the first insulating layer, and the light emitting device is disposed in the groove.

The method of claim 1,

The reflective layer is a light emitting device package containing aluminum (Al).

The method of claim 1,

The first insulating layer is a light emitting device package including aluminum oxide (Al ₂ O ₃ ).

The method of claim 1,

The substrate includes silicon (Si), and the second insulating layer comprises a silicon oxide (SiO ₂ ).

The method of claim 1,

The first insulating layer is partially formed on the substrate, the second insulating layer is a light emitting device package is formed in the remaining area of the substrate except the region where the first insulating layer is formed.

The method of claim 1,

The light emitting device package of the first electrode layer and the second electrode layer spaced apart from each other overlapping the reflective layer in the vertical direction.

The method of claim 1,

The light emitting device is disposed on the first electrode layer and is electrically connected to the first electrode layer, the light emitting device package electrically connected to the second electrode layer through a wire.

Preparing a substrate;

Forming a reflective layer on at least a portion of the substrate;

Forming a first insulating layer on the reflective layer and a second insulating layer on the substrate;

Forming a first electrode layer and a second electrode layer on the first insulating layer and the second insulating layer so as to be spaced apart from each other on the first insulating layer; And

Installing a light emitting device on the substrate and electrically connecting with the first electrode layer and the second electrode layer.

The method of claim 9

The reflective layer includes aluminum (Al), and the first insulating layer comprises aluminum oxide (Al ₂ O ₃ ) manufacturing method of the light emitting device package.

The method of claim 9,

The substrate includes silicon (Si), and the second insulating layer comprises a silicon oxide (SiO ₂ ) manufacturing method of the light emitting device package.